PMEG6020ETP [NXP]
High-temperature 60 V, 2 A Schottky barrier rectifier; 高温60 V ,2 A肖特基势垒整流器型号: | PMEG6020ETP |
厂家: | NXP |
描述: | High-temperature 60 V, 2 A Schottky barrier rectifier |
文件: | 总13页 (文件大小:207K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
11 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 60 V
•
•
•
•
•
•
•
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
•
•
•
•
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
2.8
2
Unit
A
IF
forward current
Tsp = 165 °C
-
-
-
-
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 120 °C;
square wave
[1]
A
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
-
-
2
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
Tj = 25 °C
-
-
-
-
60
V
IF = 2 A; Tj = 25 °C
460
60
530
150
mV
µA
Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
trr
reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
-
8.6
-
ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
1
2
K
A
cathode[1]
anode
1
2
1
2
sym001
SOD128
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMEG6020ETP
SOD128
plastic surface-mounted package; 2 leads
SOD128
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG6020ETP
D9
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Tj = 25 °C
Min
Max
60
Unit
reverse voltage
forward current
average forward current
-
-
-
V
A
A
IF
Tsp = 165 °C
2.8
2
IF(AV)
δ = 0.5 ; f = 20 kHz; Tamb ≤ 120 °C;
square wave
[1]
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
-
-
2
A
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
50
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Max
Unit
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
[3]
[1]
-
750
mW
-
1250 mW
2500 mW
-
Tj
junction temperature
ambient temperature
storage temperature
-
175
175
175
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
200
120
60
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1][2]
[1][3]
[1][4]
[5]
-
-
-
-
-
-
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
12
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
006aab678
3
10
Z
th(j-a)
duty cycle =
1
(K/W)
0.75
2
10
0.5
0.33
0.2
0.25
0.1
10
0.05
0.01
0.02
1
0
- 1
10
- 3
- 2
- 1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
006aab679
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.33
0.2
0.25
0.1
10
0.05
0.01
0.02
1
0
- 1
10
- 3
- 2
- 1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab680
2
10
duty cycle =
1
Z
0.75
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
10
0.1
0.05
0.01
0.02
0
1
- 1
10
- 3
- 2
- 1
2
3
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
300
360
400
430
460
500
Max
340
420
460
500
530
590
Unit
mV
mV
mV
mV
mV
mV
VF
forward voltage
IF = 0.1 A; Tj = 25 °C
IF = 0.5 A; Tj = 25 °C
IF = 1 A; Tj = 25 °C
IF = 1.5 A; Tj = 25 °C
IF = 2 A; Tj = 25 °C
IF = 2 A; Tj = -40 °C
-
-
-
-
-
-
PMEG6020ETP
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Product data sheet
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PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Parameter
Conditions
Min
Typ
395
380
360
2.5
Max
480
460
450
-
Unit
mV
mV
mV
µA
IF = 2 A; Tj = 125 °C
IF = 2 A; Tj = 150 °C
IF = 2 A; Tj = 175 °C
-
-
-
-
IR
reverse current
VR = 5 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
VR = 10 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
-
-
-
-
3.5
60
-
µA
µA
µA
mA
VR = 60 V; Tj = 25 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
150
15
100
VR = 60 V; Tj = -40 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
0.9
27
VR = 60 V; Tj = 125 °C; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Cd
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
-
-
240
80
-
-
-
pF
pF
ns
trr
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
8.6
VFRM
peak forward recovery IF = 1 A; dIF/dt = 40 A/µs; Tj = 25 °C
voltage
-
401
-
mV
006aad133
006aad134
-1
10
10
I
R
(1)
(1)
I
F
(A)
(2)
-2
-3
-4
-5
-6
-7
-8
-9
10
10
10
10
10
10
10
10
(A)
(2)
(3)
(3)
(4)
1
(4) (5)
(6)
-1
10
10
10
10
(5)
(6)
-2
-3
-4
-10
10
0
0.3
0.6
0.9
0
20
40
60
V
(V)
V (V)
R
F
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
Fig. 5. Reverse current as a function of reverse
voltage; typical values
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
006aab874
006aad135
500
1.2
C
(pF)
d
(4)
P
F(AV)
(W)
(3)
400
0.8
(2)
300
200
100
0
(1)
0.4
0
0
20
40
60
0
1
2
3
V
(V)
I
(A)
F(AV)
R
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
Fig. 7. Average forward power dissipation as a
function of average forward current; typical
values
006aad136
006aad155
2.5
2.0
P
R(AV)
(W)
P
R(AV)
(W)
(1)
2.0
1.5
1.0
0.5
0
(2)
1.5
1.0
0.5
0
(3)
(1)
(2)
(3)
(4)
(4)
0
20
40
60
0
20
40
60
V
(V)
V (V)
R
R
Tj = 150 °C
(1) δ = 1
Tj = 125 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
006aad156
006aad137
200
3
P
R(AV)
(mW)
I
(1)
(2)
F(AV)
(A)
150
2
(1)
100
50
0
(2)
(3)
(4)
1
0
(3)
(4)
0
20
40
60
0
50
100
150
200
(°C)
V
(V)
T
R
amb
Tj = 85 °C
(1) δ = 1
FR4 PCB, standard footprint
Tj = 175 °C
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig. 11. Average forward current as a function of
ambient temperature; typical values
006aad138
006aad139
3
3
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
2
2
(2)
(2)
(3)
(4)
(3)
(4)
1
0
1
0
0
50
100
150
200
(°C)
0
50
100
150
200
(°C)
T
T
amb
amb
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 13. Average forward current as a function of
ambient temperature; typical values
Fig. 12. Average forward current as a function of
ambient temperature; typical values
PMEG6020ETP
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Product data sheet
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PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
006aad140
3
(1)
(2)
I
F(AV)
(A)
2
1
0
(3)
(4)
0
50
100
150
200
(°C)
T
amb
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 14. Average forward current as a function of solder point temperature; typical values
8. Test information
I
F
I
R(meas)
time
I
R
006aad022
t
rr
Fig. 15. Reverse recovery definition
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
I
F
time
V
F
V
FRM
V
F
time
001aab912
Fig. 16. Forward recovery definition
t
p
P
duty cycle δ =
t
cy
t
cy
t
p
t
006aac658
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG6020ETP
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Product data sheet
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
9. Package outline
2.7
2.3
1.1
0.9
0.6
0.3
1
5.0 4.0
4.4 3.6
2
1.9
1.6
0.22
0.10
Dimensions in mm
07-09-12
Fig. 18. Package outline SOD128
10. Soldering
6.2
4.4
4.2
solder lands
solder resist
1.9 2.1
3.4 2.5
(2×) (2×)
solder paste
occupied area
Dimensions in mm
1.2
(2×)
1.4
(2×)
sod128_fr
Fig. 19. Reflow soldering footprint for SOD128
11. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6020ETP v.1
20121011
Product data sheet
-
-
PMEG6020ETP
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Product data sheet
11 October 2012
10 / 13
NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
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data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
12.3 Disclaimers
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PMEG6020ETP
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© NXP B.V. 2012. All rights reserved
Product data sheet
11 October 2012
11 / 13
NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG6020ETP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 October 2012
12 / 13
NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
13. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................3
Characteristics .......................................................4
8
Test information .....................................................8
8.1
Quality information .........................................
9
Package outline ................................................... 10
Soldering .............................................................. 10
Revision history ...................................................10
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 October 2012
PMEG6020ETP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 October 2012
13 / 13
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