PMEM4030NS,115 [NXP]
PMEM4030NS;
| 型号： | PMEM4030NS,115 |
| 厂家： | 
NXP |
| 描述： | PMEM4030NS |
| 文件： | 总14页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEM4030NS
NPN transistor/Schottky rectifier module
Rev. 02 — 8 July 2005
Product data sheet
1. Product profile
1.1 General description
Combination of a NPN transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1
(SO8/MS-012) small plastic package. PNP complement: PMEM4030PS.
1.2 Features
■ 1 W total power dissipation
■ High current capability up to 2 A
■ Reduces Printed-Circuit Board (PCB) area required
■ Reduces pick and place costs
■ Small plastic Surface Mounted Device (SMD) package
■ Transistor
◆ Low collector-emitter saturation voltage
■ Diode
◆ High-speed switching
◆ Low forward voltage
◆ Guard ring protected
1.3 Applications
■ DC-to-DC converters
■ Inductive load drivers
■ General-purpose load drivers
1.4 Quick reference data
Table 1:
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
NPN transistor
VCEO collector-emitter voltage
IC collector current (DC)
Schottky barrier rectifier
open base
continuous
-
-
-
-
50
2
V
A
VR
IF
reverse voltage
forward current
-
-
-
-
40
1
V
A
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
2. Pinning information
Table 2:
Pinning
Pin
1
Description
base
Simplified outline
Symbol
8
5
2
emitter
3
not connected
anode
4
5
cathode
cathode
collector
collector
1
4
6
006aaa405
7
8
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
SO8
Description
Version
SOT96-1
PMEM4030NS
plastic small outline package; 8 leads; body width
3.9 mm
4. Marking
Table 4:
Marking codes
Type number
PMEM4030NS
Marking code
P4030NS
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
2 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
NPN transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
-
-
-
-
-
50
50
5
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
open collector
continuous
2
ICRM
repetitive peak collector
current
tp ≤ 100 ms;
δ ≤ 0.25
3
ICM
IB
peak collector current
base current (DC)
-
5
A
continuous
-
0.5
550
1
A
[1]
[2]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
mW
W
-
Tj
junction temperature
ambient temperature
-
150
+150
°C
°C
Tamb
−65
Schottky barrier rectifier
VR
IF
reverse voltage
forward current
-
-
-
40
1
V
A
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ ≤ 0.25
3.5
IFSM
non-repetitive peak forward t = 8.3 µs; half
-
-
10
A
A
current
sine wave; JEDEC
method
IRSM
non-repetitive peak reverse tp ≤ 100 µs
0.5
current
Tj
junction temperature
ambient temperature
-
125
°C
°C
Tamb
−65
+125
Combined device
Tstg storage temperature
−65
+150
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
3 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
225
125
Unit
K/W
K/W
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
006aaa243
3
10
Z
duty cycle =
1.00
th(j-a)
(K/W)
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint.
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
4 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
NPN transistor
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
-
-
100
50
nA
VCB = 50 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
DC current gain
VCE = 2 V; IC = 100 mA
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A
200
-
-
200
-
-
[1]
[1]
[1]
200
-
450
-
VCE = 2 V; IC = 2 A
130
-
VCE = 2 V; IC = 3 A
80
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 2 A; IB = 100 mA
IC = 2 A; IB = 200 mA
IC = 3 A; IB = 300 mA
IC = 2 A; IB = 200 mA
-
80
160
280
260
370
130
mV
mV
mV
mV
mV
mΩ
-
-
[1]
[1]
[1]
[1]
-
-
-
-
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
-
100
[1]
[1]
[1]
base-emitter saturation IC = 2 A; IB = 100 mA
voltage
-
-
-
-
1.1
1.2
-
V
V
V
IC = 3 A; IB = 300 mA
-
VBEon
fT
base-emitter turn-on
voltage
VCE = 2 V; IC = 1 A
1.1
transition frequency
VCE = 5 V; IC = 100 mA;
f = 100 MHz
100
-
-
-
-
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
25
Schottky barrier rectifier
[1]
[1]
[1]
[1]
VF
forward voltage
reverse current
diode capacitance
IF = 100 mA
IF = 1 A
-
-
-
-
-
280
460
15
330
500
40
mV
mV
µA
µA
pF
IR
VR = 10 V
VR = 40 V
60
300
80
Cd
VR = 4 V; f = 1 MHz;
65
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
5 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
mlc389
mbl887
4
3
4
10
10
(1)
I
I
R
F
(mA)
(µA)
(2)
(3)
3
10
10
(1)
(2)
2
2
10
10
(3)
(4)
(4)
10
1
10
1
0
10
20
30
40
0
200
400
600
800
V
1000
(mV)
V
(V)
R
F
Schottky barrier rectifier
(1) Tamb = 125 °C
Schottky barrier rectifier
(1) Tamb = 125 °C
(2) Tamb = 100 °C
(3) Tamb = 75 °C
(4) Tamb = 25 °C
(2) Tamb = 100 °C
(3) Tamb = 75 °C
(4) Tamb = 25 °C
Fig 2. Forward current as a function of forward
voltage; typical values
Fig 3. Reverse current as a function of reverse
voltage; typical values
mlc390
3
10
C
d
(pF)
2
10
10
0
8
16
24
32
40
V
(V)
R
Schottky barrier rectifier
f = 1 MHz
Fig 4. Diode capacitance as a function of reverse voltage; typical values
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
6 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
mle180
mle181
1.2
BE
800
h
FE
V
(V)
(1)
600
(1)
(2)
(3)
0.8
0.4
0
(2)
400
(3)
200
0
10
−1
2
3
I
4
−1
2
3
I
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
NPN transistor; VCE = 2 V
(1) Tamb = 100 °C
NPN transistor; VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
mle183
mle182
3
10
1
R
CEsat
(Ω)
V
CEsat
(V)
2
10
−1
10
10
(1)
(3)
(2)
1
−2
−3
10
10
(1)
(3)
−1
10
(2)
2
−2
10
−1
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I
I
(mA)
C
C
NPN transistor; IC/IB = 20
NPN transistor; IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
7 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
mle179
mle178
5
1200
(3)
(2)
(6) (5)
(4)
(1)
I
C
(1)
(2)
(3)
(A)
I
C
(mA)
4
(7)
(8)
800
(4)
(5)
(6)
(7)
3
2
(9)
(10)
400
(8)
(9)
1
0
(10)
0
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
2
V
(V)
V
(V)
CE
CE
Tamb = 25 °C
(1) IB = 2600 µA
(2) IB = 2340 µA
(3) IB = 2080 µA
(4) IB = 1820 µA
(5) IB = 1560 µA
(6) IB = 1300 µA
(7) IB = 1040 µA
(8) IB = 780 µA
(9) IB = 520 µA
(10) IB = 260 µA
Tamb = 25 °C
(1) IB = 120 mA
(2) IB = 108 mA
(3) IB = 96 mA
(4) IB = 84 mA
(5) IB = 72 mA
(6) IB = 60 mA
(7) IB = 48 mA
(8) IB = 36 mA
(9) IB = 24 mA
(10) IB = 12 mA
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Collector current as a function of
collector-emitter voltage; typical values
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
8 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
mle184
mle185
1.4
1
V
V
BEsat
CEsat
(V)
(V)
−1
1
10
(1)
(2)
(3)
(1)
(2)
−2
0.6
10
(3)
−3
10
0.2
10
−1
2
3
I
4
−1
2
3
I
4
10
1
10
10
10
10
1
10
10
10
10
(mA)
(mA)
C
C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 12. Base-emitter saturation voltage as a function of
collector current; typical values
8. Application information
V
CC
V
V
OUT
IN
CONTROLLER
IN
R
load
mle231
mdb577
Fig 13. DC-to-DC converter
Fig 14. Inductive load driver (relays, motors and
buzzers) with free-wheeling diode
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
9 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
Fig 15. Package outline SOT96-1 (SO8/MS-012)
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
10 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
1000
2500
PMEM4030NS
SOT96-1
8 mm pitch, 12 mm tape and reel
-115
-118
[1] For further information and the availability of packing methods, see Section 16.
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
11 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
11. Revision history
Table 9:
Revision history
Document ID
PMEM4030NS_2
Modifications:
Release date Data sheet status
20050708 Product data sheet
Change notice Doc. number
Supersedes
-
-
PMEM4030NS_1
• Table 5 “Limiting values”: ICRP repetitive pulsed collector current renamed to ICRM repetitive peak
collector current
PMEM4030NS_1
20050525
Product data sheet
-
9397 750 15065
-
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
12 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Trademarks
Notice — All referenced brands, product names, service names and
14. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
13 of 14
PMEM4030NS
Philips Semiconductors
NPN transistor/Schottky rectifier module
17. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
14
15
16
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 8 July 2005
Document number: PMEM4030NS_2
Published in The Netherlands
相关型号：
PMF0806-R47-MHF
General Purpose Inductor, 0.47uH, 20%, 1 Element, Iron-Core, 3232, HALOGEN FREE
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