PMF250XN [NXP]
30 V, 0.9 A N-channel Trench MOSFET; 30 V ， 0.9 A N沟道沟槽MOSFET
| 型号： | PMF250XN |
| 厂家： | 
NXP |
| 描述： | 30 V, 0.9 A N-channel Trench MOSFET |
| 文件： | 总15页 (文件大小：874K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMF250XN
T323
SO
30 V, 0.9 A N-channel Trench MOSFET
Rev. 1 — 7 December 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
Low-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
12
V
[1]
ID
VGS = 4.5 V; Tamb = 25 °C
0.9
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
-
234
300
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
S
017aaa253
SOT323 (SC-70)
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMF250XN
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 4.
Marking codes
Type number
PMF250XN
Marking code[1]
AZ%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
12
V
[1]
[1]
ID
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
0.9
0.6
3.6
275
340
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
mW
mW
-
Tsp = 25 °C
-
1065 mW
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
0.4
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMF250XN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
2 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
017aaa377
10
Limit R
= V /I
DS D
DSon
I
D
(A)
1
(1)
(2)
-1
10
(3)
(4)
(5)
-2
10
10
-1
2
1
10
10
V
DS
(V)
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
3 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
397
318
Max
457
366
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
102
117
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa378
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0
0.02
0.01
10
1
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa379
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
2
10
0.25
0.2
0.1
0.05
0.02
0
10
0.01
1
-3
-2
-1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
4 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.5
1
1.5
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C
VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C
VGS = 2.5 V; ID = 0.2 A; Tj = 25 °C
VDS = 10 V; ID = 0.9 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
1
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
10
IGSS
gate leakage current
-
100
100
300
450
540
-
-
RDSon
drain-source on-state
resistance
234
351
324
2
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 0.9 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.74
0.26
0.22
50
1.1
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
10
reverse transfer
capacitance
6
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; VGS = 4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = 0.9 A
-
-
-
-
8
-
-
-
-
ns
ns
ns
ns
15
11
8
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -0.3 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
5 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
017aaa380
017aaa180
–3
–4
–5
–6
4
10
3.6 V
4.5 V
I
D
V
= 3.0 V
GS
I
D
(A)
(A)
2.8 V
3
2
1
0
10
10
10
(1)
(2)
(3)
2.5 V
2.3 V
1.8 V
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
V
DS
(V)
V
(V)
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
6 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
017aaa381
017aaa382
800
1000
DSon
(3)
(1)
(5)
R
R
DSon
(mΩ)
(mΩ)
(4)
(2)
800
600
600
400
200
0
400
200
0
(6)
(7)
(8)
(1)
(2)
0.2
1.0
1.8
2.6
3.4
0
4
8
12
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = 0.9 A
(1) VGS = 2.0 V
(2) VGS = 2.3 V
(3) VGS = 2.4 V
(4) VGS = 2.5 V
(5) VGS = 2.8 V
(6) VGS = 3.0 V
(7) VGS = 3.6 V
(8) VGS = 4.5 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
017aaa383
017aaa384
4
1.8
I
D
a
(A)
(2)
(1)
3
2
1
0
1.4
1.0
(1)
(2)
2
0.6
0
1
3
4
-60
0
60
120
180
V
GS
(V)
T (°C)
j
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
7 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
017aaa385
017aaa386
2
2.0
10
V
(1)
GS(th)
(V)
(1)
(2)
(3)
C
1.5
1.0
0.5
0
(pF)
(2)
(3)
10
1
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
017aaa387
4.5
V
DS
V
GS
(V)
I
D
3.0
V
GS(pl)
V
GS(th)
GS
V
1.5
0
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0
0.2
0.4
0.6
0.8
Q
G
(nC)
ID = 0.9 A; VDS = 15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
8 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
017aaa388
1.0
I
S
(A)
0.8
(1)
(2)
0.6
0.4
0.2
0
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
9 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
Fig 18. Package outline SOT323 (SC-70)
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
10 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
10. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
2.35
solder paste
occupied area
1.3
(3×)
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 19. Reflow soldering footprint for SOT323 (SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 20. Wave soldering footprint for SOT323 (SC-70)
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
11 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMF250XN v.1
20111207
Product data sheet
-
-
PMF250XN
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
12 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
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modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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data sheet shall define the specification of the product as agreed between
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PMF250XN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
13 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
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authorization from competent authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
non-automotive qualified products in automotive equipment or applications.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMF250XN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 December 2011
14 of 15
PMF250XN
NXP Semiconductors
30 V, 0.9 A N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .1
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 December 2011
Document identifier: PMF250XN
相关型号：
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