PMLL5251BTRL [NXP]

DIODE 22 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode;


型号：	PMLL5251BTRL
厂家：	NXP
描述：	DIODE 22 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode 稳压二极管
文件：	总7页 (文件大小：38K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

1/3 page (Datasheet)

M3D054

PMLL5225B to PMLL5267B

Voltage regulator diodes

1996 Apr 26

Product speciﬁcation

Supersedes data of November 1993

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

PMLL5225B to PMLL5267B

FEATURES

DESCRIPTION

• Total power dissipation:

max. 500 mW

Low-power voltage regulator diodes in small hermetically sealed glass

SOD80C SMD packages. The series consists of 43 types with nominal working

voltages from 3.0 to 75 V.

• Tolerance series: ±5%

• Working voltage range:

nom. 3.0 to 75 V

• Non-repetitive peak reverse power

handbook, 4 columns

dissipation: max. 40 W.

MAM215

APPLICATIONS

• Low-power voltage stabilizers or

voltage references.

The cathode is indicated by a yellow band.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I_F

continuous forward current

non-repetitive peak reverse current

−

250

I_ZSM

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge

see Table

“Per type”

P_tot

total power dissipation

T_amb= 25 °C; note 1

−

500

P_ZSM

non-repetitive peak reverse power

dissipation

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge; see Fig.3

−

t_p= 8.3 ms; square wave;

−

T_j≤ 55 °C prior to surge

T_stg

T_j

storage temperature

junction temperature

−65

+200

°C

Note

1. If flanges are kept at T_flange≤ 75 °C.

ELECTRICAL CHARACTERISTICS

Total series

T_j= 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MIN.

MAX.

UNIT

V_F

I_F= 200 mA; see Fig.4

−

1.1

1996 Apr 26

Per type

T_j= 25 °C; unless otherwise specified.

WORKING DIFFERENTIAL TEMP. COEFF.

TEST

CURRENT

I_Ztest(mA) at f = 1 MHz;

at V_R= 0 V

DIODE CAP. REVERSE CURRENT

NON-REPETITIVE PEAK

REVERSE CURRENT

I_ZSM(A)

VOLTAGE RESISTANCE

S_Z(%/K)

at I_Z

C_d(pF)

at REVERSE

VOLTAGE

V_Z(V)⁽¹⁾

at I_Ztest

r_dif(Ω)

at I_Ztest

(2)

TYPE No.

at t_p= 100 µs; T_amb= 25 °C

I_R(µA)

V_R

(V)

NOM.

MAX.

PMLL5225B

PMLL5226B

PMLL5227B

PMLL5228B

PMLL5229B

PMLL5230B

PMLL5231B

PMLL5232B

PMLL5233B

PMLL5234B

PMLL5235B

PMLL5236B

PMLL5237B

PMLL5238B

PMLL5239B

PMLL5240B

PMLL5241B

PMLL5242B

PMLL5243B

PMLL5244B

PMLL5245B

PMLL5246B

PMLL5247B

PMLL5248B

PMLL5249B

PMLL5250B

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1

1600

1700

1900

2000

1900

1600

1000

750

−0.075

−0.070

−0.065

−0.060

±0.055

±0.030

+0.038

+0.045

+0.050

+0.058

+0.062

+0.065

+0.068

+0.075

+0.076

+0.077

+0.079

+0.082

+0.083

+0.084

+0.085

+0.086

450

300

200

150

1.0

6.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

1.5

2.0

3.0

3.5

4.0

5.0

500

6.0

500

6.5

600

6.5

600

7.0

600

8.0

600

8.4

600

9.1

600

9.5

0.5

0.1

9.9

600

9.0

8.5

7.8

7.4

7.0

6.6

6.2

10.0

11.0

12.0

13.0

14.0

15.0

600

WORKING DIFFERENTIAL TEMP. COEFF.

TEST

CURRENT

I_Ztest(mA) at f = 1 MHz;

at V_R= 0 V

DIODE CAP. REVERSE CURRENT

NON-REPETITIVE PEAK

REVERSE CURRENT

I_ZSM(A)

VOLTAGE RESISTANCE

S_Z(%/K)

at I_Z

C_d(pF)

at REVERSE

VOLTAGE

(2)

V_Z(V)⁽¹⁾

at I_Ztest

r_dif(Ω)

TYPE No.

at I_Ztest

at t_p= 100 µs; T_amb= 25 °C

I_R(µA)

V_R

(V)

NOM.

MAX.

PMLL5251B

PMLL5252B

PMLL5253B

PMLL5254B

PMLL5255B

PMLL5256B

PMLL5257B

PMLL5258B

PMLL5259B

PMLL5260B

PMLL5261B

PMLL5262B

PMLL5263B

PMLL5264B

PMLL5265B

PMLL5266B

PMLL5267B

600

+0.087

+0.088

+0.089

+0.090

+0.091

+0.092

+0.093

+0.094

+0.095

+0.096

+0.097

+0.098

5.6

5.2

5.0

4.6

4.5

4.2

3.8

3.4

3.2

3.0

2.7

2.5

2.2

2.1

2.0

1.8

1.7

0.1

17.0

18.0

19.0

21.0

23.0

25.0

27.0

30.0

33.0

36.0

39.0

43.0

46.0

47.0

52.0

56.0

1.25

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.25

0.2

600

700

800

900

1000

1100

1300

1400

1600

1700

Notes

1. V_Zis measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.

2. For types PMLL5225B to PMLL5242B the I_Zcurrent is 7.5 mA; for PMLL5243B and higher I_Z= I_Ztest. S_Zvalues valid between 25 °C and 125 °C.

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

PMLL5225B to PMLL5267B

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

300

UNIT

K/W

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point lead length 10 mm

thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1

380

Note

1. Device mounted on a printed circuit-board without metallization pad.

1996 Apr 26

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

PMLL5225B to PMLL5267B

GRAPHICAL DATA

MBG930

handbook, full pagewidth

δ = 1

th j-a

0.75

0.50

0.33

(K/W)

0.20

0.10

0.05

0.02

0.01

≤0.001

δ =

−1

(ms)

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

MBG801

MBG803

250

handbook, halfpage

ZSM

(W)

(mA)

125

(1)

(2)

0.5

−1

duration (ms)

0.75

(V)

1.0

(1) T_j= 25 °C (prior to surge).

(2) T_j= 150 °C (prior to surge).

T_j= 25 °C.

Fig.3 Maximum permissible non-repetitive

peak reverse power dissipation

versus duration.

Fig.4 Forward current as a function of forward

voltage; typical values.

1996 Apr 26

Philips Semiconductors

Product speciﬁcation

Voltage regulator diodes

PMLL5225B to PMLL5267B

PACKAGE OUTLINE

handbook, full pagewidth

1.60

1.45

0.3

3.7

3.3

MBA390 - 2

Dimensions in mm.

Fig.5 SOD80C.

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Apr 26

PMLL5251BTRL [NXP]

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