PN2222A-T/R [NXP]

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN;
PN2222A-T/R
型号: PN2222A-T/R
厂家: NXP    NXP
描述:

600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN

开关 晶体管
文件: 总7页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PN2222A  
NPN switching transistor  
Product data sheet  
2004 Oct 11  
Supersedes data of 1999 May 21  
NXP Semiconductors  
Product data sheet  
NPN switching transistor  
PN2222A  
FEATURES  
PINNING  
High current (max. 600 mA)  
Low voltage (max. 40 V).  
PIN  
1
DESCRIPTION  
collector  
base  
2
APPLICATIONS  
3
emitter  
General purpose switching and linear amplification.  
DESCRIPTION  
1
handbook, halfpage  
1
3
2
3
NPN switching transistor in a TO-92; SOT54 plastic  
package. PNP complement: PN2907A.  
2
MAM279  
Fig.1 Simplified outline (TO-92; SOT54) and  
symbol.  
ORDERING INFORMATION  
PACKAGE  
TYPE NUMBER  
NAME  
DESCRIPTION  
plastic single-ended leaded (through hole) package; 3 leads  
VERSION  
PN2222A  
SC-43A  
SOT54  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
75  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
40  
V
open collector  
6
V
600  
800  
200  
500  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
°C  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
ambient temperature  
Tamb 25 °C  
65  
Tamb  
65  
2004 Oct 11  
2
NXP Semiconductors  
Product data sheet  
NPN switching transistor  
PN2222A  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth(j-a)  
thermal resistance from junction to ambient note 1  
250  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
VCB = 60 V; IE = 0 A  
MIN. MAX. UNIT  
collector-base cut-off current  
10  
10  
10  
nA  
µA  
nA  
VCB = 60 V; IE = 0 A; Tj = 125 °C  
VEB = 3 V; IC = 0 A  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
VCE = 10 V; IC = 0.1 mA  
VCE = 10 V; IC = 1 mA  
35  
50  
75  
35  
50  
100  
40  
VCE = 10 V; IC = 10 mA  
VCE = 10 V; IC = 10 mA; Tj = 55 °C  
VCE = 1 V; IC = 150 mA  
VCE = 10 V; IC = 150 mA  
VCE = 10 V; IC = 500 mA  
300  
VCEsat  
collector-emitter saturation voltage IC = 150 mA; IB = 15 mA  
IC = 500 mA; IB = 50 mA  
300  
mV  
V
1
VBEsat  
base-emitter saturation voltage  
IC = 150 mA; IB = 15 mA  
0.6  
1.2  
2
V
IC = 500 mA; IB = 50 mA  
V
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V; IE = ie = 0 A; f = 1 MHz  
VEB = 500 mV; IC = ic = 0 A; f = 1 MHz  
VCE = 20 V; IC = 20 mA; f = 100 MHz  
8
pF  
pF  
MHz  
dB  
25  
300  
F
VCE = 5 V; IC = 100 µA; RS = 1 k;  
4
f = 1 kHz  
Switching times (between 10 % and 90 % levels); see Fig.2  
ton  
td  
tr  
turn-on time  
delay time  
rise time  
ICon = 150 mA; IBon = 15 mA;  
35  
ns  
ns  
ns  
ns  
ns  
ns  
I
Boff = 15 mA; Tamb = 25 °C  
15  
20  
toff  
ts  
turn-off time  
storage time  
fall time  
250  
200  
60  
tf  
2004 Oct 11  
3
NXP Semiconductors  
Product data sheet  
NPN switching transistor  
PN2222A  
V
V
CC  
BB  
R
B
R
C
V
o
(probe)  
(probe)  
oscilloscope  
oscilloscope  
450  
450 Ω  
R2  
V
I
DUT  
R1  
mlb826  
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf 3 ns.  
R1 = 68 ; R2 = 325 ; RB = 325 ; RC = 160 .  
VBB = 3.5 V; VCC = 29.5 V.  
Oscilloscope: input impedance Zi = 50 .  
Fig.2 Test circuit for switching times.  
2004 Oct 11  
4
NXP Semiconductors  
Product data sheet  
NPN switching transistor  
PN2222A  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
max.  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
04-06-28  
04-11-16  
SOT54  
TO-92  
SC-43A  
2004 Oct 11  
5
NXP Semiconductors  
Product data sheet  
NPN switching transistor  
PN2222A  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
2004 Oct 11  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/04/pp7  
Date of release: 2004 Oct 11  
Document order number: 9397 750 13618  

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