PN4416 [NXP]
N-channel field-effect transistor; N沟道音响场效晶体管
| 型号： | PN4416 |
| 厂家： | 
NXP |
| 描述： | N-channel field-effect transistor |
| 文件： | 总9页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A
N-channel field-effect transistor
December 1997
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
FEATURES
QUICK REFERENCE DATA
• Low noise
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
• Interchangeability of drain and
source connections
VDS
drain-source voltage
PN4416
−
30
V
• High gain.
PN4416A
−
35
V
IDSS
Ptot
drain current
VDS = 15 V; VGS = 0 5
15
mA
mW
DESCRIPTION
total power
dissipation
up to Tamb = 25 °C
−
400
N-channel symmetrical silicon
junction FETs in a SOT54 envelope.
These devices are intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
VGS(off)
gate-source cut-off
voltage
VDS = 15 V;
ID = 1 nA
PN4416
−
−6
V
PN4416A
−2.5 −6
4.5 7.5
V
Yfs
common-source
transfer admittance VGS = 0; f = 1 kHz
VDS = 15 V;
mS
PINNING - SOT54 (TO-92).
PIN
DESCRIPTION
1
2
3
gate
source
drain
1
handbook, halfpage
2
3
g
d
s
MAM042
Fig.1 Simplified outline and symbol.
December 1997
2
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
PN4416
−
−
30
V
V
PN4416A
35
VGSO
gate-source voltage
PN4416
−
−
−30
−35
V
V
PN4416A
VGDO
gate-drain voltage
PN4416
−
−
−
−
−30
−35
10
V
V
PN4416A
IG
DC forward gate current
total power dissipation
storage temperature
junction temperature
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C (note 1)
400
+150
150
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
350 K/W
Rth j-a
from junction to ambient (note 1)
Note
1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
PN4416
VDS = 0; IG = −1 µA
−30
−
V
PN4416A
−35
−
−
V
IGSS
reverse gate leakage current
drain current
VDS = 0; VGS = −15 V
VDS = 15 V; VGS = 0
VDS = 0; IG = 1 mA
VDS = 15 V; ID = 1 nA
−1
15
1
nA
mA
V
IDSS
5
VGSS
VGS(off)
gate-source forward voltage
gate-source cut-off voltage
PN4416
−
−
−6
−6
7.5
V
PN4416A
−2.5
4.5
V
Yfs
common source transfer admittance
common source output admittance
PN4416
VDS = 15 V; VGS = 0
VDS = 15 V; VGS = 0
mS
Yos
−
−
50
50
µS
µS
PN4416A
December 1997
3
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0.
SYMBOL
PARAMETER
input capacitance
CONDITIONS
f = 1 MHz
MIN.
TYP.
MAX.
UNIT
pF
Cis
Cos
Crs
gis
−
−
−
−
−
−
4
−
−
−
−
−
−
−
−
−
−
4
2
output capacitance
f = 1 MHz
pF
feedback capacitance
f = 1 MHz
0.8
100
1
pF
common source input conductance
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
µS
mS
mS
mS
µS
gfs
grs
gos
Vn
common source transfer conductance
5.2
5
−
−
common source feedback conductance f = 100 MHz
f = 400 MHz
−8
−100
−
−
−
µS
common source output conductance
f = 100 MHz
f = 400 MHz
f = 100 Hz
75
100
−
µS
−
µS
equivalent input noise voltage
5
nV/√Hz
MRC168
MRC169
25
10
handbook, halfpage
handbook, halfpage
I
Y
DSS
fs
(mA)
(mS)
20
8
15
10
5
6
4
2
0
0
0
0
2
4
6
2
4
6
–V
(V)
GS(off)
–V
(V)
GS(off)
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.2 Drain current as a function of
gate-source cut-off voltage; typical values.
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
December 1997
4
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
MRC167
MRC163
80
12
handbook, halfpage
handbook, halfpage
G
os
S)
I
D
µ
(
(mA)
V
= 0 V
GS
60
8
40
20
0
–0.5 V
–1V
4
0
0
4
8
12
16
0
1
2
3
4
5
6
V
(V)
–V
(V)
DS
GS(off)
VDS = 15 V; Tj = 25 °C.
Tj = 25 °C.
Fig.4 Common source output conductance as a
function of gate-source cut-off voltage;
typical values.
Fig.5 Typical output characteristics.
MRC164
MRC158
1
rs
(pF)
12
handbook, halfpage
handbook, halfpage
C
I
D
(mA)
0.8
8
0.6
0.4
0.2
0
4
0
–10
–8
–6
–4
–2
0
–5
–4
–3
–2
–1
0
V
(V)
V
(V)
GS
GS
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.6 Typical input characteristics.
Fig.7 Typical feedback capacitance.
December 1997
5
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
MRC157
MRC165
4
3.5
10
handbook, halfpage
handbook, halfpage
–I
C
is
G
(pA)
(pF)
3
2.5
2
3
I
= 1 mA
D
10
2
10
10
1
0.1 mA
1.5
1
I
GSS
–1
10
0.5
0
–2
10
0
4
8
12
16
20
(V)
–10
–8
–6
–4
–2
V
0
(V)
V
GS
DG
VDS = 15 V; Tj = 25 °C.
Fig.8 Typical input capacitance.
Fig.9 Gate current as a function of drain-gate
voltage, typical values.
MRC139
MRC160
500
handbook, halfpage
100
handbook, halfpage
P
tot
(mW)
g
, b
is is
(mS)
400
10
b
g
is
300
200
100
1
0.1
is
0
0
0.01
50
100
150
o
10
100
1000
T
( C)
amb
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.11 Common source input conductance; typical
values.
Fig.10 Power derating curve.
December 1997
6
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
MRC159
MRC162
100
100
handbook, halfpage
handbook, halfpage
–g , –b
rs
rs
g
, –b
fs
(mS)
fs
(mS)
10
–b
–g
rs
rs
10
g
fs
1
0.1
–b
fs
1
0.01
0.1
10
0.001
100
1000
10
100
1000
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.12 Common source transfer conductance;
typical values.
Fig.13 Common source feedback conductance;
typical values.
SPICE parameters for PN4416
September 1992; version 1.0.
1
VTO = −3.553
BETA = 792.6
LAMBDA = 18.46
RD = 7.671
V
MRC161
100
µA/V2
m/V
Ω
handbook, halfpage
2
g
, b
os os
(mS)
3
4
10
5
RS = 7.671
Ω
6
IS = 333.4
aA
pF
pF
V
b
os
7
CGSO = 2.920
CGDO = 2.261
PB = 1.090
1
8
9
0.1
0.01
10 (note 1)
FC = 500.0
m
g
os
Note
1. Parameter not extracted; default value.
10
100
1000
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.14 Common source output conductance;
typical values.
December 1997
7
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
December 1997
8
Philips Semiconductors
Product specification
N-channel field-effect transistor
PN4416; PN4416A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
9
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