PPBSS8110Y_技术文档

PBSS8110Y

100 V, 1 A NPN low V_CEsat(BISS) transistor

Rev. 01 — 2 June 2004

Product data sheet

1. Product proﬁle

1.1 General description

NPN low V_CEsattransistor in a SOT363 (SC-88) plastic package.

1.2 Features

■ SOT363 package

■ Low collector-emitter saturation voltage V_CEsat

■ High collector current capability I_Cand I_CM

■ High efﬁciency reduces heat generation.

1.3 Applications

■ Major application segments:

◆ Automotive 42 V power

◆ Telecom infrastructure

◆ Industrial.

■ Peripheral driver:

◆ Driver in low supply voltage applications (e.g. lamps and LEDs)

◆ Inductive load driver (e.g. relays, buzzers and motors).

■ DC-to-DC converter.

1.4 Quick reference data

Table 1:

Symbol

V_CEO

I_C

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

1

Unit

V

collector-emitter voltage

collector current (DC)

peak collector current

equivalent on-resistance

-

A

I_CM

3

A

R_CEsat

200

mΩ

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

2. Pinning information

Table 2:

Discrete pinning

Description

collector

base

Simpliﬁed outline

Symbol

1, 2, 5, 6

6

5

4

3

4

emitter

3

4

1

2

3

sym014

SOT363

3. Ordering information

Table 3:

Ordering information

Type number Package

Name

Description

Version

SOT363

PBSS8110Y

-

plastic surface mounted package; 6 leads

4. Marking

Table 4:

Marking

Type number

Marking code^[1]

PPBSS8110Y

81*

[1] * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

5. Limiting values

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Parameter

Conditions

open emitter

open base

open collector

T_j(max)

Min

Max

120

100

5

Unit

collector-base voltage

collector-emitter voltage

emitter-base voltage

peak collector current

continuous collector current

continuous base current

total power dissipation

-

V

3

A

I_C

1

A

I_B

0.3

290

480

625

A

[1]

[2]

[3]

P_tot

T_amb≤ 25 °C

mW

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

2 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

T_j

Parameter

Conditions

Min

-

Max

150

Unit

°C

junction temperature

T_amb

operating ambient

temperature

−65

+150

°C

T_stg

storage temperature

−65

+150

°C

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm²collector mounting

pad.

[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm²collector mounting

pad.

001aaa796

600

P

tot

(mW)

(1)

(2)

400

200

0

40

80

120

160

(°C)

T

amb

(1) 1 cm²collector mounting pad.

(2) Standard footprint.

Fig 1. Power derating curves.

6. Thermal characteristics

Table 6:

Thermal characteristics

Parameter

Symbol

Conditions

Typ

431

260

200

85

Unit

K/W

[1]

[2]

[3]

[1]

R_th(j-a)

thermal resistance from junction

to ambient

in free air

R_th(j-s)

thermal resistance from junction

to soldering point

in free air

[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm²collector mounting

pad.

[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm²collector mounting

pad.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

3 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

001aaa798

3

10

(1)

Z

th

(2)

(3)

(K/W)

2

(4)

(5)

10

(6)

(7)

10

(8)

(9)

(10)

1

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

Mounted on FR4 PCB; standard footprint.

(1) δ = 1.

(2) δ = 0.75.

(3) δ = 0.5.

(4) δ = 0.33.

(5) δ = 0.2.

(6) δ = 0.1.

(7) δ = 0.05.

(8) δ = 0.02.

(9) δ = 0.01.

(10) δ = 0.

Fig 2. Transient thermal impedance as a function of pulse time; typical values.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

4 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

001aaa797

3

10

Z

th

(1)

(K/W)

(2)

(3)

2

10

(4)

(5)

(6)

(7)

10

(8)

(9)

1

(10)

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

Mounted on FR4 PCB; mounting pad for collector = 1 cm².

(1) δ = 1.

(2) δ = 0.75.

(3) δ = 0.5.

(4) δ = 0.33.

(5) δ = 0.2.

(6) δ = 0.1.

(7) δ = 0.05.

(8) δ = 0.02.

(9) δ = 0.01.

(10) δ = 0.

Fig 3. Transient thermal impedance as a function of pulse time; typical values.

7. Characteristics

Table 7:

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

100

50

Unit

nA

I_CBO

collector-base cut-off V_CB= 80 V; I_E= 0 A

current

-

V_CB= 80 V; I_E= 0 A;

µA

T_j= 150 °C

I_CES

I_EBO

h_FE

collector-emitter

cut-off current

V_CE= 80 V; V_BE= 0 V

V_EB= 4 V; I_C= 0 A

-

100

nA

emitter-base cut-off

current

DC current gain

V_CE= 10 V; I_C= 1 mA

V_CE= 10 V; I_C= 250 mA

V_CE= 10 V; I_C= 0.5 A

V_CE= 10 V; I_C= 1 A

150

100

80

-

500

[1]

-

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

5 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

Table 7:

Characteristics …continued

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

40

Unit

mV

mΩ

V_CEsat

collector-emitter

saturation voltage

I_C= 100 mA; I_B= 10 mA

I_C= 500 mA; I_B= 50 mA

I_C= 1 A; I_B= 100 mA

-

120

200

-

[1]

R_CEsat

V_BEsat

V_BEon

f_T

equivalent

on-resistance

160

base-emitter

saturation voltage

I_C= 1 A; I_B= 100 mA

-

1.05

0.9

-

V

base-emitter turn-on V_CE= 10 V; I_C= 1 A

voltage

-

V

transition frequency

V_CE= 10 V; I_C= 50 mA;

f = 100 MHz

100

-

MHz

pF

C_c

collector capacitance V_CB= 10 V; I_E= I_e= 0 A;

f = 1 MHz

7.5

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

001aaa497

001aaa495

600

1000

V

BE

(mV)

h

FE

(1)

(2)

(3)

800

(1)

(2)

400

600

400

200

(3)

0

10

−1

2

3

4

−1

2

3

4

1

10

(mA)

10

1

10

I (mA)

C

I

C

V_CE= 10 V.

(1) T_amb= 100 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 100 °C.

Fig 4. DC current gain as a function of collector

current; typical values.

Fig 5. Base-emitter voltage as a function of collector

current; typical values.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

6 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

001aaa504

001aaa505

3

10

V

CEsat

(mV)

2

10

(1)

(2)

(3)

10

−1

2

3

4

−1

2

3

4

1

10

(mA)

1

10

I (mA)

C

I

C

I_C/I_B= 10.

I_C/I_B= 20; T_amb= 25 °C.

(1) T_amb= 100 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values.

001aaa506

001aaa498

4

10

1200

V

BEsat

(mV)

V

CEsat

(mV)

1000

3

2

(1)

10

800

600

400

200

(2)

(3)

10

−1

2

3

4

−1

2

3

4

1

10

(mA)

10

1

10

I (mA)

C

I

C

I_C/I_B= 50; T_amb= 25 °C.

I_C/I_B= 10.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 100 °C.

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig 9. Base-emitter saturation voltage as a function of

collector current; typical values.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

7 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

001aaa499

001aaa500

1200

1000

BEsat

V

BEsat

(mV)

V

(mV)

1000

800

600

400

600

400

10

−1

2

3

4

−1

2

3

4

10

1

10

(mA)

1

10

I (mA)

C

I

C

I_C/I_B= 20; T_amb= 25 °C.

I_C/I_B= 50; T_amb= 25 °C.

Fig 10. Base-emitter saturation voltage as a function of

collector current; typical values.

Fig 11. Base-emitter saturation voltage as a function of

collector current; typical values.

001aaa496

001aaa501

3

2

10

I

C

R

CEsat

(Ω)

(1)

(2)

(3)

(4)

(A)

1.6

2

10

(5)

(6)

1.2

0.8

0.4

0

(7)

(8)

10

(9)

(10)

1

(1)

(2)

(3)

−1

10

−1

2

3

4

0

1

2

3

4

5

10

1

10

I (mA)

C

V

(V)

CE

T_amb= 25 °C.

(1) I_B= 35 mA.

(2) I_B= 31.5 mA.

(3) I_B= 28 mA.

(4) I_B= 24.5 mA.

(5) I_B= 21 mA.

(6) I_B= 17.5 mA.

(7) I_B= 14 mA.

(8) I_B= 10.5 mA.

(9) I_B= 7 mA.

I_C/I_B= 10.

(1) T_amb= 100 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(10) I_B= 3.5 mA.

Fig 12. Collector current as a function of

collector-emitter voltage; typical values.

Fig 13. Equivalent on-resistance as a function of

collector current; typical values.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

8 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

001aaa502

001aaa503

3

10

R

CEsat

R

CEsat

(Ω)

2

10

1

−1

10

−1

2

3

4

−1

2

3

4

10

1

10

(mA)

10

1

10

I (mA)

C

I

C

I_C/I_B= 20; T_amb= 25 °C.

I_C/I_B= 50; T_amb= 25 °C.

Fig 14. Equivalent on-resistance as a function of

collector current; typical values.

Fig 15. Equivalent on-resistance as a function of

collector current; typical values.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

9 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

8. Package outline

Plastic surface mounted package; 6 leads

SOT363

D

B

E

A

X

y

H

v

M

A

E

6

5

4

Q

pin 1

index

A

1

2

3

c

e

1

b

p

L

p

w

M B

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

p

1

E

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

mm

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT363

SC-88

Fig 16. Package outline.

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

10 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

9. Revision history

Table 8:

Revision history

Document ID

Release date Data sheet status

20040602 Product data

Change notice Order number

9397 750 12567

Supersedes

PBSS8110Y_1

-

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

11 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

10. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

I

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

11. Deﬁnitions

12. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

12 of 13

PBSS8110Y

Philips Semiconductors

100 V, 1 A NPN low V_CEsat(BISS) transistor

14. Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Contact information . . . . . . . . . . . . . . . . . . . . 12

3

4

5

6

7

8

9

10

11

12

13

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 2 June 2004

Document order number: 9397 750 12567

Published in The Netherlands


型号：	PPBSS8110Y
厂家：	NXP
描述：	100 V, 1 A NPN low VCEsat (BISS) transistor 100 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管晶体晶体管
文件：	总13页 (文件大小：106K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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