PSMN020-150W [NXP]
TrenchMOS transistor; 的TrenchMOS晶体管
| 型号： | PSMN020-150W |
| 厂家： | 
NXP |
| 描述： | TrenchMOS transistor |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Objective specification
TrenchMOS transistor
PSMN020-150W
FEATURES
SYMBOL
QUICK REFERENCE DATA
d
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
VDSS = 150 V
ID = 73 A
g
RDS(ON) ≤ 20 mΩ
s
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
N-channel enhancement mode
field-effect power transistor in a
plastic envelope using ’trench’
technology. The device has very
low on-state resistance. It is
intended for use in dc to dc
converters and general purpose
switching applications.
PIN
DESCRIPTION
1
2
gate
drain
3
source
drain
2
tab
1
3
The PSMN020-150W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS
VDGR
VGS
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
-
-
-
-
-
-
-
150
150
± 20
73
V
V
V
A
A
A
W
˚C
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
51
IDM
PD
Tj, Tstg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
290
300
175
- 55
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
EAS Non-repetitive avalanche
CONDITIONS
MIN.
MAX.
UNIT
Unclamped inductive load, IAS = 64 A;
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
-
1255
mJ
energy
VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V
IAS
Non-repetitive avalanche
current
-
73
A
February 1999
1
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOS transistor
PSMN020-150W
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-mb
Thermal resistance junction
to mounting base
-
0.5
K/W
Rth j-a
Thermal resistance junction in free air
to ambient
45
-
K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS Drain-source breakdown
CONDITIONS
MIN. TYP. MAX. UNIT
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
150
133
-
-
-
-
V
V
voltage
Gate threshold voltage
Tj = -55˚C
VGS(TO)
2.0
1.0
3.0
-
4.0
-
V
V
Tj = 175˚C
Tj = -55˚C
-
-
-
-
-
-
-
18
-
2
0.05
-
4.4
20
57
100
10
500
V
RDS(ON)
Drain-source on-state
resistance
VGS = 10 V; ID = 25 A
mΩ
mΩ
nA
µA
µA
Tj = 175˚C
IGSS
IDSS
Gate source leakage current VGS = ±10 V; VDS = 0 V
Zero gate voltage drain
current
VDS = 150 V; VGS = 0 V;
Tj = 175˚C
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 73 A; VDD = 120 V; VGS = 10 V
-
-
-
164
30
77
-
-
-
nC
nC
nC
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 75 V; RD = 3 Ω;
VGS = 10 V; RG = 5 Ω
Resistive load
-
-
-
-
50
-
-
-
-
ns
ns
ns
ns
114
214
114
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
6429 7000
pF
pF
pF
785
435
810
500
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IS
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
-
-
-
-
73
A
A
ISM
VSD
290
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
-
-
0.85
1.1
1.2
-
V
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 20 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 30 V
-
-
200
1.5
-
-
ns
µC
February 1999
2
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOS transistor
PSMN020-150W
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
α
E
P
A
A
1
β
q
S
R
D
Y
(1)
L
1
Q
b
2
L
1
2
3
c
b
1
w
M
b
e
e
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
β
A
A
b
b
b
c
D
E
e
L
L
P
Q
q
R
S
w
Y
α
UNIT
mm
1
1
2
1
1.9
1.7
1.2
0.9
3.7
3.3
2.6
2.4
7.5
7.1
15.7
15.3
6°
4°
17°
13°
5.3
4.7
2.2
1.8
3.2
2.8
0.9
0.6
21
20
16
15
16
15
4.0
3.6
3.5
3.3
5.45
5.3
0.4
Note
1. Terminals are uncontrolled within zone L .
1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT429
TO-247
97-06-11
Fig.1. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
February 1999
3
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOS transistor
PSMN020-150W
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
4
Rev 1.000
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