PSMN5R6-100PS [NXP]
N-channel 100 V 5.6 mΩ standard level MOSFET; N沟道100 V 5.6 mΩ的标准电平MOSFET型号: | PSMN5R6-100PS |
厂家: | NXP |
描述: | N-channel 100 V 5.6 mΩ standard level MOSFET |
文件: | 总13页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
Rev. 01 — 23 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for standard level gate drive
and conduction losses
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
100
100
V
A
[1]
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
306
5.6
W
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
and 12
4.3
mΩ
[1] Continious current limited by package.
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN5R6-100PS TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
V
VDGR
VGS
-
100
20
V
-20
V
ID
VGS = 10 V; Tj = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
95
A
[1]
-
100
539
306
175
175
A
IDM
Ptot
Tstg
Tj
peak drain current
-
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C;
-
-
100
539
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
[1] Continious current limited by package.
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
2 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
03aa16
003aad683
120
150
I
D
P
(%)
der
(A)
(1)
100
80
50
40
0
0
0
50
100
150
T
200
0
50
100
150
200
T
mb
(°C)
(°C)
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad702
3
10
I
D
Limit R
= V / I
DS D
DSon
(A)
10
μ
s
2
10
100
μ
s
DC
10
1
1 ms
10 ms
100 ms
−1
10
2
3
1
10
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
3 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to see Figure 4
mounting base
-
0.3
0.49
K/W
003aad684
1
Z
th
(K/W)
δ = 0.5
−1
10
0.2
0.1
0.05
t
p
0.02
P
δ =
−2
T
10
single shot
t
t
p
T
−3
10
−6
−5
−3
−1
10
−4
−2
10
10
10
10
1
10
t
p
(s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
4 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
2
-
-
V
V
V
-
-
VGS(th)
VGSth
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 25 °C;
voltage
3
4
see Figure 8 and 9
ID = 1 mA; VDS= VGS; Tj = 175 °C;
see Figure 9
1
-
-
-
-
V
V
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 9
4.6
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
1
µA
µA
nA
nA
mΩ
-
500
100
100
15.7
IGSS
2
2
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
-
4.3
5.6
-
mΩ
RG
gate resistance
f = 1 MHz
0.97
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
ID = 80 A; VDS = 50 V; VGS = 10 V;
see Figure 13 and 14
-
-
-
-
141
36
-
-
-
-
nC
nC
nC
pF
43
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15 and 16
8061
Coss
Crss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
-
-
561
330
-
-
pF
pF
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 15 and 16
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 0.6 Ω; VGS = 10 V;
RG(ext) = 1.5 Ω
-
-
-
-
31
46
83
34
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
0.79
1.2
V
trr
reverse recovery time
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V
-
-
67
-
-
ns
Qr
182
nC
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
5 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
003aad685
003aad692
160
250
5.5
5
6
8
10
g
fs
I
D
(S)
200
(A)
120
150
100
50
4.5
80
40
0
V
(V) = 4
GS
0
0
0.5
1
1.5
2
0
20
40
60
80
100
V
DS
(V)
I
D
(A)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
03aa35
003aad687
−1
10
160
I
D
I
D
(A)
(A)
min
typ
max
−2
−3
−4
−5
−6
10
120
10
10
10
10
80
40
0
T = 25 °C
j
T = 175 °C
j
0
2
4
6
0
2
4
6
V
GS
(V)
V
GS
(V)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
6 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
003aad280
003aad774
5
3.2
V
GS(th)
(V)
a
4
3
2
1
0
max
2.4
typ
1.6
0.8
0
min
-60
0
60
120
180
−60
0
60
120
180
T (°C)
j
T (°C)
j
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad688
003aad689
10
10
V
GS
(V) = 4.5
R
R
DSon
(mΩ)
DSon
(mΩ)
8
8
6
4
2
0
5
6
4
2
6
5.5
8
15
10
4
8
12
16
20
0
20
40
60
80
100
I
(A)
D
V
GS
(V)
Fig 11. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
7 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
003aad694
10
V
DS
V
GS
(V)
I
8
6
4
2
0
D
V
GS(pl)
V
DS
= 20 V
V
DS
= 50 V
V
GS(th)
V
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
40
80
120
160
Q
(nC)
G
Fig 14. Gate charge waveform definitions
Fig 13. Gate-source voltage as a function of gate
charge; typical values
003aad686
003aad691
5
16000
10
C
(pF)
C
(pF)
C
iss
12000
8000
4000
0
4
3
2
C
iss
10
10
10
C
rss
C
C
oss
rss
−1
2
10
1
10
10
0
4
8
12
V
DS
(V)
V
(V)
GS
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
8 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
003aad693
200
I
S
(A)
160
120
80
40
0
T = 175 °C
j
T = 25 °C
j
0
0.3
0.6
0.9
1.2
V
SD
(V)
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
9 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 18. Package outline SOT78 (TO-220AB)
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
10 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN5R6-100PS
20091123
Product data sheet
-
-
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
11 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Applications— Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Terms and conditions of sale— NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
athttp://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General— Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS— is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PSMN5R6-100PS_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 23 November 2009
12 of 13
PSMN5R6-100PS
NXP Semiconductors
N-channel 100 V 5.6 mΩ standard level MOSFET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 November 2009
Document identifier: PSMN5R6-100PS_1
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