PSMN7R8-120PSQ [NXP]
PSMN7R8-120PS MIKEB - N-channel 120V 7.9mΩ standard level MOSFET in TO220 TO-220 3-Pin;
| 型号： | PSMN7R8-120PSQ |
| 厂家： | 
NXP |
| 描述： | PSMN7R8-120PS MIKEB - N-channel 120V 7.9mΩ standard level MOSFET in TO220 TO-220 3-Pin |
| 文件： | 总13页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B
A
0
2
2
-
O
T
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
25 January 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
TO220 package
Suitable for standard level gate drive
•
•
•
3. Applications
AC-to-DC power supply
Synchronous rectification
Motor control
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
120
70
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
349
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
4.7
6.72
7.9
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
-
-
50.5
167
-
-
nC
nC
QG(tot)
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
-
-
386
mJ
source avalanche
energy
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
drain
G
3
mbb076
mb
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN7R8-120PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN7R8-120PS
PSMN7R8-120PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
120
120
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
-
-
70
A
70
A
IDM
peak drain current
280
A
PSMN7R8-120PS
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Product data sheet
25 January 2013
2 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol
Ptot
Parameter
Conditions
Min
-
Max
349
175
175
260
Unit
W
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Tmb = 25 °C; Fig. 2
Tstg
-55
-55
-
°C
Tj
°C
Tsld(M)
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
70
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
280
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
-
386
mJ
003aak697
03aa16
80
60
40
20
0
120
I
D
(A)
P
der
(%)
80
40
0
0
50
100
150
T (°C)
200
0
50
100
150
200
j
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R8-120PS
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Product data sheet
25 January 2013
3 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aak698
2
10
I
AL
(A)
(1)
10
(2)
1
10
-3
-2
-1
10
10
1
10
t
(ms)
AL
Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aak696
3
2
10
10
I
D
(A)
Limit R
= V / I
DS
DSon
D
t
= 10 us
p
100 us
10
DC
1 ms
1
10 ms
100 ms
-1
10
2
3
1
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
0.35
0.43
K/W
PSMN7R8-120PS
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Product data sheet
25 January 2013
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance
from junction to
ambient
vertical in free air
-
60
-
K/W
003aak695
1
Z
th(j-mb)
= 0.5
δ
(K/W)
0.2
0.1
0.1
0.05
0.02
t
p
P
10-2
δ =
T
single shot
t
t
p
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
120
108
2
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
3
4
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
1
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
4.6
IDSS
drain leakage current
gate leakage current
VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
0.1
-
1
µA
µA
nA
nA
mΩ
-
500
100
100
7.9
IGSS
-
10
10
6.72
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
4.7
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
19.3
22.9
mΩ
PSMN7R8-120PS
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Product data sheet
25 January 2013
5 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RG
internal gate
f = 1 MHz
0.39
0.78
1.56
Ω
resistance (AC)
Dynamic characteristics
QG(tot) total gate charge
QGS
ID = 25 A; VDS = 60 V; VGS = 10 V;
Fig. 14; Fig. 15
-
-
-
167
-
-
-
nC
nC
nC
gate-source charge
36.9
24.2
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
12.7
-
nC
QGD
gate-drain charge
-
-
50.5
4.5
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
9473
441
-
-
-
pF
pF
pF
reverse transfer
capacitance
298
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
45.5
55.3
151.8
60.8
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.81
75.7
264
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 60 V
Qr
recovered charge
PSMN7R8-120PS
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Product data sheet
25 January 2013
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aak689
003aak688
120
40
I
6
5.5
10
8
6.5
D
R
(A)
DSon
V
(V) = 5
(m
)
GS
Ω
100
80
60
40
20
0
30
20
10
0
4.5
4
0
4
8
12
16
0
1
2
3
V
(V)
V
(V)
DS
GS
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aak686
003aak687
200
100
I
g
D
fs
(A)
(S)
80
150
60
40
100
50
0
T = 25
j
C
T = 175
j
C
°
°
20
0
0
1
2
3
4
5
6
0
20
40
60
80
100
V
(V)
I
(A)
GS
D
Fig. 8. Forward transconductance as a function of
drain current; typical values
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN7R8-120PS
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Product data sheet
25 January 2013
7 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aad280
03aa35
- 1
5
10
I
V
D
GS(th)
(A)
(V)
min
typ
max
- 2
- 3
- 4
- 5
- 6
4
10
10
10
10
10
max
3
2
1
0
typ
min
- 60
0
60
120
180
0
2
4
6
T (°C)
j
V
(V)
GS
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature gate-source voltage
003aak694
003aag654
12
3
R
DSon
a
(mW)
11
V
(V) =
4.5
5
GS
2.5
10
9
2
1.5
1
5.5
10
8
6
6.5
7
7
0.5
0
6
5
0
25
50
75
100
125
-60
0
60
120
180
I
(A)
T ( C)
D
°
j
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN7R8-120PS
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Product data sheet
25 January 2013
8 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
003aak691
10
V
DS
V
GS
(V)
V
=
96 V
DS
I
D
8
6
4
2
0
60 V
24 V
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
0
50
100
150
200
Q
(nC)
G
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aak692
003aak693
5
10
100
C
(pF)
I
S
(A)
80
C
iss
4
10
60
40
3
10
C
C
oss
T = 25
j
C
°
T = 175 C
°
j
20
0
rss
2
10
-1
2
10
1
10
10
0
0.3
0.6
0.9
V
1.2
V
(V)
(V)
DS
SD
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 17. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN7R8-120PS
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Product data sheet
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NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 18. Package outline TO-220AB (SOT78)
PSMN7R8-120PS
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Product data sheet
25 January 2013
10 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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applications and products using NXP Semiconductors products, and NXP
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is deemed to offer functions and qualities beyond those described in the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PSMN7R8-120PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
25 January 2013
11 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
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NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN7R8-120PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
25 January 2013
12 / 13
NXP Semiconductors
PSMN7R8-120PS
N-channel 120V 7.9mΩ standard level MOSFET in TO220
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 January 2013
PSMN7R8-120PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
25 January 2013
13 / 13
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