PSS9015B [NXP]
PNP general purpose transistor; PNP通用晶体管
| 型号： | PSS9015B |
| 厂家： | 
NXP |
| 描述： | PNP general purpose transistor |
| 文件： | 总7页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PSS9015B
PNP general purpose transistor
Product specification
2004 Aug 10
Supersedes data of 2002 Sep 20
Philips Semiconductors
Product specification
PNP general purpose transistor
PSS9015B
FEATURES
PINNING
PIN
• Low collector capacitance.
DESCRIPTION
1
2
3
collector
base
APPLICATIONS
• General purpose switching and amplification
• Low frequency, low noise amplifier.
emitter
DESCRIPTION
1
handbook, halfpage
2
3
PNP transistor in a SOT54 plastic package.
NPN complement: PSS9014.
MSB033
MARKING
TYPE NUMBER
PSS9015B
MARKING CODE
Fig.1 Simplified outline (SOT54).
S9015B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−50
UNIT
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−45
open collector
−5
−100
−200
−200
500
mA
mA
mA
mW
°C
ICM
IBM
Ptot
total power dissipation
storage temperature
junction temperature
operating ambient temperature
up to Tamb = 25 °C; note 1
Tstg
−65
−
+150
150
Tj
°C
Tamb
−65
+150
°C
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2004 Aug 10
2
Philips Semiconductors
Product specification
PNP general purpose transistor
PSS9015B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to in free air; note 1
ambient
240
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −30 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
−
−50
−5
nA
VCB = −30 V; IE = 0;
Tamb = 150 °C
−
µA
ICEO
IEBO
hFE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
VCE = −30 V; IB = 0
−
−
−100
−100
300
nA
nA
VEB = −5 V; IC = 0
−
−
IC = −1 mA; VCE = −5 V
IC = −100 mA; IB = −5 mA; note 1
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V
100
−
200
−
VCEsat
VBEsat
VBEon
fT
saturation voltage
−700
mV
saturation voltage
−
−
−1000 mV
base-emitter turn-on voltage
transition frequency
−600
100
−
−750
mV
IC = −10 mA; VCE = −10 V;
−
−
MHz
f = 100 MHz
Cc
F
collector capacitance
noise figure
VCB = −10 V; IE = Ie = 0;
f = 1 MHz
−
−
−
−
7
pF
dB
VCE = −5 V; IC = −0.2 mA;
10
RS = 1 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Aug 10
3
Philips Semiconductors
Product specification
PNP general purpose transistor
PSS9015B
MLD931
MLD932
3
4
10
−10
handbook, halfpage
handbook, halfpage
V
CEsat
h
FE
(mV)
2
3
10
−10
2
10
−10
1
−10
−10
−10
−2
−1
2
3
−2
−1
2
I
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
C
C
VCE = −5 V.
IC/IB = 20.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD933
MLD934
4
−10
4
−10
handbook, halfpage
handbook, halfpage
V
V
BEsat
BE
(mV)
(mV)
3
3
−10
−10
2
2
−10
−10
−10
−10
−10
−10
−1
2
3
−2
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
I
−10
(mA)
I
(mA)
C
C
IC/IB = 20.
VCE = −5 V.
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2004 Aug 10
4
Philips Semiconductors
Product specification
PNP general purpose transistor
PSS9015B
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
max.
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
97-02-28
04-06-28
SOT54
TO-92
SC-43A
2004 Aug 10
5
Philips Semiconductors
Product specification
PNP general purpose transistor
PSS9015B
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Aug 10
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp7
Date of release: 2004 Aug 10
Document order number: 9397 750 13687
相关型号：
PSSB05P-T710
Trans Voltage Suppressor Diode, 20W, 5V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, MINIATURE, PLASTIC, DFN-2-0402, 2 PIN
PROTEC
©2020 ICPDF网 联系我们和版权申明