PTB32005X [NXP]
NPN microwave power transistors; NPN微波功率晶体管
| 型号： | PTB32005X |
| 厂家： | 
NXP |
| 描述： | NPN microwave power transistors |
| 文件： | 总12页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
1997 Feb 18
Product specification
Supersedes data of November 1994
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
FEATURES
PINNING - SOT440A
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
PIN
DESCRIPTION
1
2
3
collector
emitter
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
base connected to flange
• Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz.
1
olumns
c
DESCRIPTION
b
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
3
e
MAM131
2
Top view
MARKING
TYPE NUMBER
PTB32001X
MARKING CODE
3201X
3203X
3205X
PTB32003X
PTB32005X
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class B circuit.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
Zi
(Ω)
ZL
(Ω)
TYPE NUMBER
(GHz)
PTB32001X
PTB32003X
PTB32005X
CW
3
3
3
24
24
24
≥1.3
≥8
≥8
≥8
≥35
15 + j31
5.5 + j10
CW
CW
≥2.5
≥4.5
≥35
≥35
5.5 + j29 5 − j2.2
2.8 + j20 4 − j7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
−
−
−
−
V
V
V
V
VCEO
VCES
VEBO
IC
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
PTB32001X
open base
RBE = 0 Ω
15
40
3.0
open collector
−
−
−
0.25
0.5
A
A
A
PTB32003X
PTB32005X
0.75
Ptot
total power dissipation
PTB32001X
Tmb ≤ 75 °C; f > 1 MHz
−
−
−
4.2
W
W
W
°C
°C
°C
PTB32003X
7.6
PTB32005X
8.7
Tstg
Tj
storage temperature range
operating junction temperature
soldering temperature
−65
−
+200
200
235
Tsld
t ≤ 10 s; note 1
−
Note
1. Up to 0.3 mm from ceramic.
MLC091
MLC092
6
10
handbook, halfpage
handbook, halfpage
P
tot
P
(W)
tot
(W)
4
5
2
0
0
−50
0
50
100
150
T
200
( C)
50
0
50
100
150
T
200
( C)
o
o
mb
mb
f > 1 MHz.
f > 1 MHz.
Fig.2 Power derating curve; PTB32001X.
Fig.3 Power derating curve; PTB32003X.
1997 Feb 18
3
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
MLC093
10
handbook, halfpage
P
tot
(W)
5
0
−50
0
50
100
150
200
( C)
o
T
mb
f > 1 MHz.
Fig.4 Power derating curve; PTB32005X.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Tj = 75 °C
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base
PTB32001X
22
K/W
K/W
K/W
K/W
PTB32003X
12
PTB32005X
10.5
0.7
Rth mb-h
thermal resistance from mounting base to heatsink
Tj = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
1997 Feb 18
4
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
PTB32001X
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)CBO
IC = 1 mA; IE = 0
40
−
−
−
−
−
−
−
−
V
V
V
V
PTB32003X
IC = 2 mA; IE = 0
IC = 3 mA; IE = 0
40
40
40
PTB32005X
V(BR)CES
ICBO
collector-emitter breakdown voltage IC = 10 mA; RBE = 0 Ω
collector cut-off current
PTB32001X
PTB32003X
VCE = 24 V; IE = 0
−
−
−
−
−
−
10
20
30
µA
µA
µA
VCE = 24 V; IE = 0
CE = 24 V; IE = 0
PTB32005X
V
IEBO
emitter cut-off current
PTB32001X
VEB = 1.5 V; IC = 0
VEB = 1.5 V; IC = 0
VEB = 1.5 V; IC = 0
−
−
−
−
−
−
0.2
0.4
0.6
µA
µA
µA
PTB32003X
PTB32005X
Ccb
collector-base capacitance
PTB32001X
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
−
−
−
2.2
3
−
−
−
pF
pF
pF
PTB32003X
PTB32005X
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
3.8
Cce
collector-emitter capacitance
PTB32001X
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
−
−
−
0.3
0.6
0.9
−
−
−
pF
pF
pF
PTB32003X
PTB32005X
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
IE = IC = 0; VCB = 24 V;
VEB = 1.5 V; f = 1 MHz
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
TYPE NUMBER
(GHz)
PTB32001X
3
3
3
24
24
24
>1.3; typ. 1.8 >8; typ. 9.5
>2.5; typ. 3.0 >8; typ. 9.5
>4.5; typ. 5.5 >8; typ. 9.5
>35; typ. 45
>35; typ. 45
>35; typ. 45
Class B (CW) PTB32003X
PTB32005X
Note
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
1997 Feb 18
5
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
4
3.7
2.2
2
0.8
10
output
input
100 pF
(ATC)
8
4
30
19.3
30
MSA115
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity: εr = 2.55.
Substrate: circuits on a double copper-clad printed-circuit board Teflon fibreglass dielectric.
Fig.5 Prematching test circuit board for PTB32001X.
8.8
2.3
2.3
17.4
0.8
10.5
input
output
100 pF
(ATC)
14.8
2.3
3.8
9.4
3.1
30
MSA116
30
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity: εr = 2.55.
Substrate: circuits on a double copper-clad printed board Teflon fibre glass dielectric.
Fig.6 Prematching test circuit board for PTB32003X.
6
1997 Feb 18
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
7.3
2.2
3.9
2
0.5
1.5
0.5
12.4
14.2
input
output
100 pF
(ATC)
8
8
8.3
4.2
30
9.8
9.7
30
4
6.5
MSA117
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity: εr = 2.55.
Substrate: circuits on a double copper-clad printed board Teflon fibreglass dielectric.
Fig.7 Prematching test circuit board for PTB32005X.
1997 Feb 18
7
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
PACKAGE OUTLINE
0.1
4.5
max
3.45
2.90
1.7 max
3
20.5 max
seating plane
1.0
0.25 M
1
4.5
0.25
O
M
min
3.2
2.9
5.5
5.1
max
3.4
(1)
4.5
min
2
2.0
7.1
MBC888
14.2
(1) Flatness of this area ensures full thermal contact with bolt head.
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M2.5.
Fig.8 SOT440A.
1997 Feb 18
8
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
PTB32001X; PTB32003X;
PTB32005X
NPN microwave power transistors
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number: 9397 750 01734
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