PUMD17/T2 [NXP]
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal;型号: | PUMD17/T2 |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总12页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 24 January 2005
Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1:
Product overview
Type number
Package
PNP/PNP
NPN/NPN
complement
complement
Philips
SOT666
SOT363
JEITA
-
PEMD17
PUMD17
PEMB17
PUMB17
PEMH17
PUMH17
SC-88
1.2 Features
■ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place cost
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
50
Unit
V
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
-
100
61
mA
kΩ
R1
33
0.37
47
0.47
R2/R1
0.57
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
2. Pinning information
Table 3:
Pinning
Pin
1
Description
Simplified outline
Symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
R2
4
TR2
5
TR1
1
2
3
6
001aab555
R2
R1
1
2
3
006aaa143
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
-
Description
Version
SOT666
SOT363
PEMD17
PUMD17
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SC-88
4. Marking
Table 5:
Marking codes
Type number
PEMD17
Marking code[1]
5N
PUMD17
D9*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
2 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
open emitter
open base
-
-
-
50
50
10
V
V
V
open collector
-
-
+40
V
V
negative
−10
VI
input voltage TR2
positive
-
-
-
-
+10
−40
100
100
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
SOT363
mA
mA
ICM
Ptot
Tamb ≤ 25 °C
[1]
-
200
mW
mW
°C
[1] [2]
SOT666
-
200
Tstg
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
Tj
°C
Tamb
−65
+150
°C
Per device
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
-
300
300
mW
mW
[1] [2]
SOT666
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
3 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
Table 7:
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
Per transistor
Rth(j-a)
thermal resistance from
Tamb ≤ 25 °C
junction to ambient
[1]
SOT363
-
-
-
-
625
625
K/W
K/W
[1] [2]
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1] [2]
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Per transistor; for the PNP transistor with negative polarity
Min
Typ
Max
Unit
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
110
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
-
-
-
VCEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA
150
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 0.3 V; IC = 2 mA
bias resistor 1 (input)
-
1.7
2.7
47
1.2
-
V
4
V
33
0.37
61
0.57
kΩ
R2/R1
Cc
bias resistor ratio
0.47
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
TR2 (PNP)
-
-
-
-
2.5
3
pF
pF
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
4 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
006aaa184
006aaa185
3
2
10
10
(2)
(1)
(3)
h
FE
V
CEsat
(mV)
(1)
2
10
(2)
(3)
10
1
10
10
10
−1
2
−1
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa186
006aaa187
2
10
10
V
I(on)
(V)
V
I(off)
(V)
(1)
10
(2)
(1)
(2)
(3)
1
(3)
1
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
5 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
006aaa208
006aaa209
3
2
10
−10
h
FE
(1)
(3)
(2)
(1)
V
(mV)
CEsat
(2)
(3)
2
10
10
1
−10
−10
−10
−1
2
−1
2
−1
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 6. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa210
006aaa211
2
−10
−10
V
I(on)
(V)
V
I(off)
(V)
(1)
−10
(1)
(2)
(3)
(2)
(3)
−1
−1
−1
−1
−10
−10
−1
2
−2
−1
−10
−1
−10
−10
−10
−10
−1
−10
I
(mA)
I (mA)
C
C
VCE = −0.3 V
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a function
of collector current; typical values
Fig 8. TR2 (PNP): Off-state input voltage as a function
of collector current; typical values
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
6 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
8. Package outline
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
97-02-28
04-11-08
SOT363
SC-88
Fig 9. Package outline SOT363 (SC-88)
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
7 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-08-27
04-11-08
SOT666
Fig 10. Package outline SOT666
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
8 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
9. Packing information
Table 9:
Packing methods
[1]
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number
Package
Description
Packing quantity
3000
-
4000
10000
-
PEMD17
PUMD17
PUMD17
SOT666
SOT363
SOT363
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115
[2]
[3]
-115
-125
-
-
-135
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
9 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice
Doc. number
Supersedes
PEMD17_PUMD17_3 20050124
Product data sheet
-
9397 750 14367 PUMD17_2
Modifications:
• This data sheet is an enhancement of data sheet PUMD17_2.
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Type PEMD17 added
• Table 8 Characteristics: Vi(on) input-on voltage and Vi(off) input-off voltage renamed to VI(on)
on-state input voltage and VI(off) off-state input voltage
• Figure 1, 2, 3, 4, 5, 6, 7 and 8 electrical graphs for TR1 (NPN) and TR2 (PNP) added
• Table 9 Packing information added
PUMD17_2
PUMD17_1
20040422
Product specification -
9397 750 13099 PUMD17_1
20031016
Product specification -
9397 750 11866
-
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
10 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14367
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 24 January 2005
11 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 24 January 2005
Document number: 9397 750 14367
Published in The Netherlands
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