PXT3906,115 [NXP]
PXT3906;
| 型号： | PXT3906,115 |
| 厂家： | 
NXP |
| 描述： | PXT3906 开关 晶体管 |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PXT3906
PNP switching transistor
Product specification
2004 Nov 22
Supersedes data of 1999 Apr 14
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
• High-speed saturated switching applications.
DESCRIPTION
2
1
PNP switching transistor in a SOT89 plastic package.
NPN complement: PXT3904.
3
MARKING
sym079
MARKING CODE(1)
*2A
3
2
1
TYPE NUMBER
PXT3906
Note
Fig.1 Simplified outline (SOT89) and symbol.
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
VERSION
PXT3906
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Nov 22
2
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−40
open collector
−6
−100
−200
−100
mA
mA
mA
ICM
IBM
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
−
−
−
0.45
0.65
0.8
W
W
W
°C
°C
°C
note 2
note 3
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
Tamb
−65
+150
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aaa242
1000
P
tot
(mW)
(1)
(2)
800
600
400
200
0
(3)
−75
−25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 22
3
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
thermal resistance from junction to
ambient
note 1
note 2
note 3
278
192
156
80
K/W
K/W
K/W
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aaa239
3
10
Z
th
(1)
(K/W)
(2)
(3)
(4)
(5)
2
10
(6)
(7)
(8)
(9)
10
(10)
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 22
4
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
006aaa240
3
10
Z
th
(K/W)
(1)
(2)
(3)
2
10
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa241
3
10
Z
th
(K/W)
(1)
2
10
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
10
(10)
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
5
2004 Nov 22
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
CONDITIONS
IE = 0 A; VCB = −30 V
MIN.
MAX.
−50
UNIT
nA
collector-base cut-off current
emitter-base cut-off current
DC current gain
−
−
IC = 0 A; VEB = −6 V
VCE = −1 V; (see Fig.6)
IC = −0.1 mA
−50
nA
60
80
100
60
30
−
−
IC = −1 mA
−
IC = −10 mA
300
−
IC = −50 mA
IC = −100 mA
−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−250
−400
−850
−950
4.5
10
mV
mV
mV
mV
pF
−
VBEsat
base-emitter saturation voltage IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−650
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = ie = 0 A; VCB = −5 V; f = 1 MHz
IC = ic = 0 A; VEB = −500 mV; f = 1 MHz
−
−
pF
IC = −10 mA; VCE = −20 V; f = 100 MHz 250
−
MHz
dB
F
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
−
4
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); (see Fig.7)
ton
td
tr
turn-on time
delay time
rise time
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA
−
−
−
−
−
−
65
ns
ns
ns
ns
ns
ns
35
35
toff
ts
turn-off time
storage time
fall time
300
225
75
tf
2004 Nov 22
6
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
MGD835
160
h
FE
120
80
40
0
−2
−1
2
3
−10
−10
−1
−10
−10
−10
I
(mA)
C
VCE = −1 V.
Fig.6 DC current gain; typical values.
V
B
V
C
BB
CC
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
7
2004 Nov 22
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-09-13
04-08-03
SOT89
TO-243
SC-62
2004 Nov 22
8
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Nov 22
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp10
Date of release: 2004 Nov 22
Document order number: 9397 750 13897
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