PXTA27 [NXP]
NPN Darlington transistor; NPN达林顿晶体管
| 型号： | PXTA27 |
| 厂家： | 
NXP |
| 描述： | NPN Darlington transistor |
| 文件： | 总8页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PXTA27
NPN Darlington transistor
1997 May 14
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
FEATURES
PINNING
PIN
• High current (max. 0.5 A)
• Low voltage (max. 60 V).
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
handbook, halfpage
3
2
NPN Darlington transistor in a SOT89 plastic package.
TR1
TR2
MARKING
TYPE NUMBER
PXTA27
MARKING CODE
1
1
2
3
MAM300
A27
Bottom view
Fig.1 Simplified outline (SOT89) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCES
IC
PARAMETER
collector-base voltage
CONDITIONS
open emitter
VBE = 0
MIN.
MAX.
60
UNIT
−
−
−
−
V
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
60
0.5
1.3
−
V
A
Ptot
Tamb ≤ 25 °C
W
hFE
IC = 10 mA; VCE = 5 V
10000
10000
125
IC = 100 mA; VCE = 5 V
−
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
−
MHz
1997 May 14
2
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
VCBO
VCES
VEBO
IC
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
VBE = 0
60
open collector
10
0.5
1
ICM
IB
200
1.3
+150
150
+150
mA
W
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
93
UNIT
K/W
K/W
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
12
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General part of handbook SC04”.
1997 May 14
3
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 50 V
MIN.
MAX.
100
UNIT
nA
ICBO
ICES
IEBO
hFE
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
−
−
−
VBE = 0; VCE = 50 V
IC = 0; VEB = 10 V
100
100
nA
nA
VCE = 5 V; see Fig.2
IC = 10 mA
10000
−
IC = 100 mA
10000
−
VCEsat
VBEsat
VBEon
fT
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
IC = 100 mA; IB = 0.1 mA
IC = 100 mA; IB = 0.1 mA
IC = 100 mA; VCE = 5 V
IC = 30 mA; VCE = 5 V; f = 100 MHz
−
1.5
1.5
2
V
−
V
−
V
125
−
MHz
MGD837
80000
h
FE
60000
40000
20000
0
10
−1
2
3
1
10
10
10
I
(mA)
C
VCE = 2 V.
Fig.2 DC current gain; typical values.
1997 May 14
4
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
3
E
L
H
E
1
2
3
c
b
2
w
M
b
1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
L
min.
UNIT
A
b
b
b
c
D
E
e
e
H
E
w
1
2
3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
4.25
3.75
mm
3.0
1.5
0.8
0.13
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT89
97-02-28
1997 May 14
5
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 14
6
Philips Semiconductors
Product specification
NPN Darlington transistor
PXTA27
NOTES
1997 May 14
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 14
Document order number: 9397 750 02317
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