PZTM1102T/R [NXP]
TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power;
| 型号： | PZTM1102T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 0.2 A, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Power 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
PZTM1102
PNP transistor/Schottky-diode
module
1996 May 09
Product specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
FEATURES
DESCRIPTION
• Low output capacitance
• Fast switching time
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
• Integrated Schottky protection
diode.
1
4
handbook, halfpage
APPLICATIONS
• High-speed switching for industrial
applications.
4
2
PINNING
1
2
3
3
PIN
1
DESCRIPTION
cathode Schottky
Top view
MAM237
Marking code: TM1102.
2
base
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
collector, anode Schottky
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
VBE = 0
−
−
−
−
−40
V
V
V
−40
−6
open collector
−200
mA
Schottky barrier diode
VR
IF
continuous reverse voltage
−
−
−
−
−
−
40
1
V
forward current (DC)
average forward current
power dissipation
A
IF(AV)
P
1
A
up to Tamb = 25 °C; note 1
reverse current applied
forward current applied
0.5
125
150
W
°C
°C
Tj
junction temperature
Combined device
Ptot
Tamb
Tstg
Tj
total power dissipation
up to Tamb = 25 °C; note 2
−
1.2
W
operating ambient temperature
storage temperature
−55
−55
−
+150
+150
150
°C
°C
°C
junction temperature
Notes
1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
1996 May 09
2
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V(BR)CBO collector-base breakdown
voltage
open emitter; IC = −10 µA; IE = 0;
Tamb = −55 to +150 °C; note 1
−40
−
−
−
V
V
V
V(BR)CES collector-emitter
breakdown voltage
open base; IC = −1 mA; VBE = 0;
Tamb = −55 to +150 °C; note 1
−40
−6
−
V(BR)EBO emitter-base breakdown
voltage
open collector; IE = −10 µA; IC = 0;
T
amb = −55 to +150 °C; note 1
ICES
collector-emitter cut-off
current
VCE = −20 V; VBE = 0
100
50
nA
µA
nA
µA
VCE = −20 V; VBE = 0; Tamb = −55 to +150 °C −
IEBO
emitter-base cut-off current VEB = −6 V; IC = 0
VEB = −6 V; IC = 0; Tamb = −55 to +150 °C
−
−
50
10
VCEsat
collector-emitter saturation note 1
voltage
IC = −10 mA; IB = −1 mA
−
−
−200
−300
mV
mV
IC = −50 mA; IB = −3.2 mA
VCEsat
VBEsat
VBEsat
collector-emitter saturation Tamb = −55 to +150 °C; note 1
voltage
IC = −10 mA; IB = −1 mA
−
−
−250
−350
mV
mV
IC = −50 mA; IB = −3.2 mA
base-emitter saturation
voltage
note 1
IC = −10 mA; IB = −1 mA
−
−
−850
−950
mV
mV
IC = −50 mA; IB = −5 mA
Tamb = −55 to +150 °C; note 1
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IE = ie = 0; VCB = −5 V; f = 1 MHz
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −10 mA; VCE = −20 V; f = 100 MHz
VCE = −1 V; note 1
base-emitter saturation
voltage
−
−1.0
−1.1
4.5
10
V
−
V
Cob
Cib
fT
output capacitance
input capacitance
transition frequency
DC current gain
−
pF
pF
MHz
−
250
−
hFE
IC = −0.1 mA
40
−
IC = −1 mA
70
−
IC = −10 mA
100
30
300
−
IC = −100 mA
hFE
DC current gain
VCE = −1 V; Tamb = −55 to +150 °C; note 1
IC = −10 mA
60
15
500
IC = −100 mA
−
SWITCHING TIMES (see Figs 2 and 3)
td
tr
delay time
rise time
VCC = 5 V
3
7
ns
ns
ns
ns
IC = 50 mA
Vi = 0 to 5 V
13
200
50
23
380
80
ts
tf
storage time
fall time
1996 May 09
3
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Schottky barrier diode
VF
forward voltage
IF = 100 mA; note 1
−
−
−
−
−
−
330
mV
IF = 100 mA; Tamb = −55 to +150 °C; note 1
IF = 1 A; note 1
400
500
560
300
35(2)
mV
mV
mV
µA
IF = 1 A; Tamb = −55 to +150 °C; note 1
VR = 40 V; note 1
IR
reverse current
VR = 40 V; Tj = 125 °C;
mA
T
amb = −55 to +150 °C; note 1
IR
reverse current
VR = 10 V; note 1
−
−
40
15(2)
µA
VR = 10 V; Tj = 125 °C;
mA
Tamb = −55 to +150 °C; note 1
Cj
junction capacitance
VR = 0 V; f = 1 MHz
−
250
pF
Notes
1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.
2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS VALUE
UNIT
thermal resistance from junction to ambient (for the transistor)
note 1
100
250
K/W
K/W
Rth j-a
thermal resistance from junction to ambient (for the Schottky diode) note 1
Note
1. Refer to SOT223 standard mounting conditions.
1996 May 09
4
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
GRAPHICAL DATA
5 V
handbook, halfpage
V
= 5 V DC
handbook, halfpage
INPUT
CC
V
i
0 V
5.23 Ω
(1%)
7.5 kΩ
(5%)
t
p
V
o
5 V
0 V
10%
90%
V
DUT
i
825 Ω
(1%)
OUTPUT
V
(pin 4)
o
90 Ω
10%
90%
(1%)
t
t
f
d
MBH222
t
t
r
s
t
MBH223
t
on
off
tr < 5 ns (10% to 90%); tp = 1 µs; δ = 0.02; Zi = 50 Ω.
ton = td + tr; toff = ts + tf.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
1996 May 09
5
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.4 SOT223.
1996 May 09
6
Philips Semiconductors
Productspecification
PNP transistor/Schottky-diode module
PZTM1102
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 09
7
相关型号：
©2020 ICPDF网 联系我们和版权申明