RB521S30 [NXP]
200 mA low VF MEGA Schottky barrier rectifier; 200毫安低VF MEGA肖特基势垒整流器
| 型号： | RB521S30 |
| 厂家： | 
NXP |
| 描述： | 200 mA low VF MEGA Schottky barrier rectifier |
| 文件： | 总12页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521S30
200 mA low VF MEGA Schottky barrier rectifier
Rev. 01 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small
and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 0.2 A
I Reverse voltage: VR ≤ 30 V
I Low reverse current: IR ≤ 30 µA
I AEC-Q101 qualified
I Ultra small and flat lead SMD plastic package
1.3 Applications
I Low current rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
[1]
[2]
T
T
amb ≤ 120 °C
sp ≤ 140 °C
-
-
-
-
-
-
0.2
0.2
30
A
-
A
IR
reverse current
reverse voltage
forward voltage
VR = 10 V
2.5
-
µA
V
VR
VF
30
IF = 0.2 A
420
500
mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
RB521S30
SC-79
plastic surface-mounted package; 2 leads
SOD523
4. Marking
Table 4.
Marking codes
Type number
RB521S30
Marking code
ZB
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
average forward current
Tj = 25 °C
-
30
V
IF(AV)
square wave;
δ = 0.5;
f = 20 kHz
[1]
[2]
T
T
amb ≤ 120 °C
sp ≤ 140 °C
-
-
-
0.2
0.2
1
A
A
A
IFSM
non-repetitive peak
forward current
tp = 8.3 ms
half sine wave;
JEDEC method
[3][4]
[3][1]
[3][5]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
275
420
500
mW
mW
mW
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
2 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
455
300
250
90
K/W
K/W
K/W
K/W
[4]
[5]
[6]
Rth(j-sp)
thermal resistance from
junction to solder point
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
3 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
006aab710
3
10
duty cycle =
1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0
0.05
0.02
0.01
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab711
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
4 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
VF
forward voltage
IF = 0.1 mA
IF = 1 mA
-
-
-
-
-
-
-
130
190
255
355
420
2.5
190
250
300
410
500
30
mV
mV
mV
mV
mV
µA
IF = 10 mA
IF = 100 mA
IF = 200 mA
VR = 10 V
IR
reverse current
Cd
diode capacitance
f = 1 MHz; VR = 1 V
20
25
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
006aab712
006aab713
−2
10
10
R
I
(1)
I
F
(A)
10
(A)
−3
(2)
1
(1)
(2)
−4
10
−1
10
10
10
10
−5
10
(3)
−6
10
−2
−3
−4
(3) (4) (5)
−7
10
(4)
−8
10
−9
10
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
V
(V)
V (V)
R
F
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 3. Forward current as a function of forward
voltage; typical values
Fig 4. Reverse current as a function of reverse
voltage; typical values
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
5 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
006aab714
006aab715
35
0.15
C
d
(pF)
30
P
F(AV)
(W)
(4)
(3)
25
20
15
10
5
0.10
0.05
0.0
(2)
(1)
0
0
10
20
30
0.0
0.1
0.2
0.3
V
(V)
I
(A)
F(AV)
R
f = 1 MHz; Tamb = 25 °C
Tj = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Average forward power dissipation as a
function of average forward current; typical
values
006aab716
006aab717
0.175
0.3
P
R(AV)
(W)
0.15
(1)
I
F(AV)
(A)
0.125
0.10
0.075
0.05
0.025
0.0
(2)
0.2
(1)
(2)
(3)
(3)
(4)
0.1
(4)
0.0
0
5
10
15
20
25
0
25
50
75
100
125
150
T (°C)
amb
175
V
(V)
R
Tj = 125 °C
FR4 PCB, standard footprint
(1) δ = 1
Tj = 150 °C
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 7. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig 8. Average forward current as a function of
ambient temperature; typical values
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
6 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
006aab718
006aab719
0.3
0.3
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
0.2
0.2
(3)
(4)
(3)
(4)
0.1
0.0
0.1
0.0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
sp
175
T
amb
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
(1) δ = 1; DC
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
solder point temperature; typical values
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 11. Reverse recovery time test circuit and waveforms
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
7 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 12. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and
with IRMS defined as RMS current.
× δ
IRMS = IM
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.85
0.75
0.65
0.58
1
1.65 1.25
1.55 1.15
2
0.34
0.26
0.17
0.11
Dimensions in mm
02-12-13
Fig 13. Package outline SOD523 (SC-79)
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
8 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
-
8000
-315
-
10000
-
RB521S30
SOD523 2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
2.15
1.1
solder lands
solder resist
0.5 0.6
1.2
(2×) (2×)
solder paste
occupied area
Dimensions in mm
0.7
(2×)
0.8
(2×)
sod523_fr
Reflow soldering is the only recommended soldering method.
Fig 14. Reflow soldering footprint SOD523 (SC-79)
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
9 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
RB521S30_1
20091006
Product data sheet
-
-
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
10 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
RB521S30_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 6 October 2009
11 of 12
RB521S30
NXP Semiconductors
200 mA low VF MEGA Schottky barrier rectifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 October 2009
Document identifier: RB521S30_1
相关型号：
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