RZ1214B65Y [NXP]
NPN microwave power transistor; NPN微波功率晶体管
| 型号： | RZ1214B65Y |
| 厂家： | 
NXP |
| 描述： | NPN microwave power transistor |
| 文件： | 总8页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
RZ1214B65Y
NPN microwave power transistor
Product specification
1999 Dec 24
Supersedes data of 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
FEATURES
PINNING - SOT443A
PIN
• Interdigitated structure provides high emitter efficiency
DESCRIPTION
• Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
1
2
3
collector
emitter
• Gold metallization realizes very stable characteristics
and excellent lifetime
base connected to flange
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input and output matching ensures good
stability and allows an easier design of wideband
circuits.
handbook, halfpage
1
c
APPLICATIONS
b
• Intended for use in common base class C wideband
pulsed power amplifiers for L-band radar applications in
the 1.2 to 1.4 GHz band.
3
e
2
Top view
MAM314
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class-C wideband amplifier.
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
MODE OF OPERATION
(GHz)
Class-C; tp = 150 µs; δ = 5%
1.2 to 1.4
50
≥70
≥7
≥35
see Fig 4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Dec 24
2
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
65
UNIT
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
−
−
−
−
−
−
V
V
V
V
A
W
VCEO
VCES
VEBO
IC
open base
15
60
3
RBE = 0 Ω
open collector
tp ≤ 150 µs; δ ≤ 5%
6
Ptot
Tmb ≤ 75 °C;
225
tp ≤ 150 µs; δ ≤ 5%
Tstg
Tj
storage temperature
−65
−
+200
200
°C
°C
°C
operating junction temperature
soldering temperature
Tsld
at 0.2 mm from the case;
−
235
t ≤ 10 s
MGD977
250
handbook,
P
tot
(W)
200
150
100
50
0
0
50
100
150
200
(°C)
T
mb
tp = 150 µs; δ = 5%.
Fig.2 Power derating curve.
1999 Dec 24
3
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
THERMAL CHARACTERISTICS
Tj = 75 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
2.5
UNIT
K/W
K/W
K/W
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink note 1
0.2
thermal resistance from junction to heatsink
tp = 100 µs; δ = 10 %;
0.55
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of associated Handbook”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector cut-off current
CONDITIONS
IC = 40 mA; IE = 0
MIN.
MAX.
UNIT
V(BR)CBO
V(BR)CES
ICBO
65
60
−
−
−
4
V
V
IC = 40 mA; RBE = 0
VCB = 50 V; IE = 0
VEB = 1.5 V; IC = 0
mA
mA
IEBO
emitter cut-off current
−
0.4
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
CONDITIONS
(GHz)
tp = 150 µs; δ = 5% 1.2 to 1,4
tp = 300 µs; δ = 10% 1.2 to 1,4
50
50
typ.80; >70
typ.80;
typ.7.8; >7
typ.7
typ.40; >35 see Fig 4
typ.30 see Fig 4
Class-C
1999 Dec 24
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
15
6.5
5.7
3
2.3
0.65
0.65
input
output
5.3
3
3.5
5
3
5
8.5
4.8
4
MGK060
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Wideband test circuit for class-C operation at 1.2 to 1.4 GHz.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
z
∞
i
1.2 GHz
1.4
1.3 1.3
10
1.2 GHz
1.4
Z
L
5
0.2
2
0.5
MBC985
1
Class-C operation; VCE = 50 V; PL = 65 W; Zo = 5 Ω; tp = 150 µs; δ = 5%.
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
5
1999 Dec 24
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
PACKAGE OUTLINE
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
SOT443A
D
A
F
B
3
D
1
U
1
q
C
c
1
L
U
E
E
2
1
A
w
p
M
M
M
B
A
1
L
2
w
M
M
C
Q
b
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
b
c
D
D
E
E
F
L
p
Q
q
U
U
w
w
1
1
1
2
1
2
6.32
4.90
3.40 3.66
3.20 2.84
23.10 9.90
22.70 9.70
3.20 0.15 10.00 10.21 8.15 10.21 1.60
2.90 0.09
9.70 9.91 7.85 9.91 1.40
6.25
5.75
0.41 0.94
16.50
0.650
0.249
0.193
0.134 0.144
0.126 0.112
0.909 0.390
0.894 0.382
0.126 0.006 0.394 0.402 0.321 0.402 0.063 0.246
0.114 0.004 0.382 0.390 0.309 0.390 0.055 0.226
inches
0.016 0.037
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT443A
99-03-29
1999 Dec 24
6
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Dec 24
7
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/03/pp8
Date of release: 1999 Dec 24
Document order number: 9397 750 06656
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