SA1921BE-T [NXP]
IC TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48, Cellular Telephone Circuit;
| 型号： | SA1921BE-T |
| 厂家： | 
NXP |
| 描述： | IC TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48, Cellular Telephone Circuit 电信集成电路 蜂窝电话电路 电信电路 信息通信管理 |
| 文件： | 总36页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA1921
Satellite and cellular dual-band RF
front-end
Product specification
1999 Mar 02
Supersedes data of 1998 Sep 11
IC17 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
DESCRIPTION
The SA1921 is an integrated dual-band RF front-end that operates
at both cellular (AMPS, DAMPS, and GSM) and satellite
FEATURES
• Low current consumption
• Outstanding low- and high-band noise figure
(1515–1600 MHz) frequencies, and is designed in a 13 GHz f
T
• Excellent gain stability versus temperature and supply
• Image reject high-band mixer with over 30 dB of rejection
• Increased low-band LNA gain compression during analog
transmission
BiCMOS process—QUBiC1. The low-band is a combined low-noise
amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 943
MHz with 18.3 dB of gain and an IIP3 of –5 dBm. The wide-dynamic
range mixer has a 11 dB noise figure at 943 MHz with 7.2 dB of gain
and an IIP3 of +5 dBm.
• LO input and output buffers
• On chip logic for network selection and power down
• Very small outline package
The high-band contains a receiver front-end, and a high frequency
transmit mixer intended for closed loop transmitters. One advantage
of the high-band architecture is an image-rejection mixer with over
30 dB of image rejection; thus, eliminating external filter cost while
saving board space. The system noise figure is 3.9 dB at 1550 MHz
with a power gain of 22.2 dB and an IIP3 of –11.5 dB.
APPLICATIONS
• 800 to 1000 MHz analog and digital receivers
• 1515 to 1600 MHz digital receivers
• Portable radios
• Digital mobile communications equipment
PIN CONFIGURATION
12 11 10
9
8
7
6
5
4
3
2
1
HI/LO
SYN ON
13
14
15
16
48 N/C
47 GND
HIGH BAND IF A
HIGH BAND IF B
46 GND
45 LOW BAND LNA OUT
LOW BAND IF A
LOW BAND IF B
GND
17
18
19
20
21
22
44 GND
43 LOW BAND LNA IN
42 HIGH BAND LNA IN
41 GND
HIGH BAND LO A
HIGH BAND LO B
LOW BAND LO A
V
40
CC
39 GND
LOW BAND LO A
Rx ON
23
24
38 STRONG SIGNAL
37 N/C
25 26 27 28 29 30 31 32 33 34 35 36
SR01732
Figure 1.
Pin Configuration
PACKAGE
ORDERING INFORMATION
TYPE NUMBER
NAME
LQFP48
DESCRIPTION
Plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm
VERSION
SA1921
SOT313-2
2
1999 Mar 02
853–2121 20917
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PIN DESCRIPTIONS
PIN
PIN NAME
NO.
DESCRIPTION
1
N/C
No Connection
Transmit IF A
Transmit IF B
Ground
2
Tx IF A
Tx IF B
GND
3
4
5
MIX IN
GND
Low Band Mixer Input
Ground
6
7
V
CC
V
CC
8
GND
Tx A
Ground
9
Transmit Signal A
Transmit Signal B
Ground
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Tx B
GND
N/C
No Connection
HI/LO
High Band/Low Band Control
LO Buffer Power Control
High Band IF A
SYN ON
HIGH BAND IF A
HIGH BAND IF B
LOW BAND IF A
LOW BAND IF B
GND
High Band IF B
Low Band IF A
Low Band IF B
Ground
HIGH BAND LO A
HIGH BAND LO B
LOW BAND LO A
LOW BAND LO B
Rx ON
High Band LO Output
High Band LO Output
Low Band LO Output
Low Band LO Output
LNA/Mixer Power Control
V
CC
V
CC
Tx ON
Tx Mixer/Driver Power
V
CC
V
CC
HIGH BAND IMAGE SET I
High Band Image Set I
Ground
GND
HIGH BAND LO INPUT
High Band LO Connection
Low Band LO Connection
Ground
LOW BAND LO INPUT
GND
HIGH BAND IMAGE SET Q
High Band Image Set Q
Ground
GND
GND
Ground
N/C
N/C
No Connection
No Connection
Strong Signal Detection
Ground
STRONG SIGNAL
GND
V
CC
V
CC
GND
HIGH BAND LNA IN
LOW BAND LNA IN
GND
Ground
High Band LNA Input
Low Band LNA Input
Ground
LOW BAND LNA OUT
GND
Low Band LNA Output
Ground
GND
Ground
N/C
No Connection
3
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
HI/LO
N/C
GND
SYN ON
GND
HIGH BAND IF A
HIGH BAND IF B
LNA OUT
LOW BAND IF A
5 pF
GND
LOW BAND LNA IN
HIGH BAND LNA IN
GND
LOW BAND IF B
IMAGE
5 pF
REJECT
MIXER
GND
HIGH BAND LO A
HIGH BAND LO B
LOW BAND LO A
LOW BAND LO B
Rx ON
V
CC
GND
STRONG SIGNAL
N/C
SR01733
Figure 2.
Block Diagram
4
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 1. POWER DOWN CONTROL
T
MIXER
X
LO BUFFER
LNA
MIXER
DRIVER
Control State
(Hi/Lo, Syn On, Rx On, Tx On, Strong Signal)
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
High
Band
Low
Band
x000x
01000
01100
01101
01110
Sleep
Off
Off
Off
Off
Off
Off
On
On
On
On
Off
Off
Off
Off
Off
Off
Off
On
Off
On
Off
Off
Off
On
On
On
Off
Off
Off
Off
Off
On
Low-Band LO Buffer on
Low-Band Receive Normal
Low-Band receive Strong Signal
Low-Band Transmit (Analog only)
Off
Off
Off
Off
Off
Off
Off
Off
High Bias
01010
11000
11100
11101
11010
N/A
Off
On
On
On
On
On
Off
Off
Off
Off
Off
Off
On
Off
Off
Off
Off
Off
On
On
Off
Off
Off
Off
Off
Off
Off
Off
Off
Off
On
On
Off
Off
Off
Off
High-Band LO Buffer On
High-Band Receive Normal
High-Band Receive Strong Signal
N/A
Off
Off
Off
Off
NOTE:
1. “0” is low logic state; “1” is high logic state.
5
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
OPERATION
The low-band contains both an LNA and mixer that is designed to
Control Logic Section
operate in the 800 to 1000 MHz frequency range. The high-band
contains an LNA and image-rejection mixer that is designed to
operate in the 1515 to 1600 MHz frequency range with over 30 dB of
rejection over an intermediate frequency (IF) range from 150 to
185 MHz.
Pins HI/LO, SYN ON, Rx On, Tx On, Strong Signal, control the logic
functions. The HI/LO mode selects between low-band and
high-band operation. The SYN ON mode enables the LO buffers
independent of the other circuitry. When SYN ON is high, all internal
buffers in the LO path of the circuit are turned on, thus minimizing
LO pulling when the remainder of the receive or transmit chain is
powered-up.
Image rejection is achieved in the internal architecture by two RF
mixers in quadrature and two all-pass filters in the I and Q IF
channels that phase shift the IF by 45_ and 135_, respectively. The
two phase shifted IFs are recombined and buffered to produce the
IF output signal.
The Rx ON mode enables the LO buffers when the device is in the
low-band receive normal, receive strong signal and transmit modes;
the Rx ON mode enables the LO buffers, also, when the device is in
the high-band receive normal, and receive strong signal modes.
The LO section consists of an internal phase shifter to provide
quadrature LO signals to the receive mixers. The filters outputs are
buffered before being fed to the receive mixers. The transmit mixer
section consists of a low-noise amplifier, and a down-convert mixer.
In the transmit mode, an internal LO buffer is used to drive the
transmit IF down-convert mixer.
The Tx ON mode enables the transmit mixer. The strong signal
mode, when disabled, allows the low- and high-band LNAs to
function normally; and when the strong signal mode is enabled, it
turns-off the low- and high-band LNAs. This is needed when the
input signal is large and needs to be attenuated.
Low-Band Receive Section
The circuit contains a LNA followed by a wide-band mixer. In a
typical application circuit, the LNA output uses an external pull-up
Local Oscillator (LO) Section
The LO input directly drives the two internal all-pass networks to
provide quadrature LO to the receive mixers. A synthesizer-on (SYN
ON) mode is used to power-up all LO input buffers, thus minimizing
the pulling effect on the external VCO when entering receive or
transmit mode.
inductor to V and is AC coupled. The mixer IF outputs are
CC
differential. A typical application will load the output buffer with an
inductor across the IF outputs, a pull-up inductor to V and an AC
coupled capacitor to the matching network.
CC
Transmit Mixer Section
Low-Band Receive Section (Analog Transmit
Mode)
The bias current of the low-band LNA will increase during analog
transmission, which increases its gain compression point and makes
the receiver less sensitive to PA leakage power for an AMPS
application.
The transmit mixer is used for down-conversion to the transmit IF. Its
inputs are coupled to the transmit RF which is down-converted to a
modulated transmit IF frequency, and phase-locked with the
baseband modulation.
The IF outputs are HIGH impedance (open-collector type). A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V and AC coupled capacitors to the
matching network.
CC
High-Band Receive Section
The circuit contains an LNA followed by two high dynamic range
mixers. These are Gilbert cell mixers; the internal architecture is fully
differential. The LO is shifted in phase by 45_ and 135_ and mixes
the amplified RF signal to create I and Q channels. The two I and Q
channels are buffered, phase shifted by 45_ and 135_, respectively,
amplified and recombined internally to realize the image rejection.
The IF output is differential and of the open-collector type. A typical
application will load the output buffer with an inductor across the IF
outputs, a pull-up inductor to V and an AC coupled capacitor to
CC
the matching network.
6
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETERS
VALUE
4.75
UNIT
V
V
CC
Input supply voltage at pins: 7, 25, 27, 40
P
Power dissipation
150
mW
dBm
°C
D
P
IN
Input power at all ports
Storage temperature range
+20
T
srg
–65 to +125
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETERS
RATING
3.6 to 3.9
–40 to +85
UNIT
V
V
CC
DC Supply voltage
T
O
Operating temperature range (pin temp)
°C
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V
CC
= +3.75 V, T = +25°C unless otherwise noted
A
SYMBOL
PARAMETERS
Current Consumption: Sleep Mode
Low Band Receive Normal
Low Band Receive Strong
Low Band Transmit (Analog)
Low Band Transmit (GSM)
High Band Receive Normal
High Band Receive Strong
High Band Transmit (GSM)
Logic Low Input
CONDITION
X000X
MIN.
TYP.
1.0
MAX.
UNIT
mA
I
I
I
I
I
I
I
I
25
CC
CC
CC
CC
CC
CC
CC
CC
01100
01101
01111
01010
11100
11101
11010
9.8
12.2
9.0
14.7
mA
mA
mA
mA
mA
mA
mA
V
18.0
16.5
40.0
36.0
19.4
32.0
48.0
0
0.5
4.0
Logic High Input
1.9
V
7
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS
Low-Band, Dual Mode of Operation
V
= +3.75 V, Freq = 943 MHz, Freq = 1106 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
CC
RF
LO
LOin
A
PARAMETERS
Min
–3s
TYP
+3s
Max
960
UNITS NOTES
System
RF Input Frequency Range
IF Frequency
869
943
163
1106
22.5
36
MHz
MHz
MHz
dB
LO Frequency
1032
1123
Cascaded Power Gain; includes 3dB filter loss
21.4
30
23.6
42
Power Gain Reduction (Strong Signal Mode—LNA Off)
Cascaded Noise Figure; includes 3dB filter loss
dB
2.6
dB
LNA
LNA Gain
17.6
–6.0
18.3
–5.0
–3.0
1.7
19
dB
LNA IIP3 (60 kHz spacing)
LNA IIP3 (200 kHz spacing)
LNA Noise Figure
–4.0
dBm
dBm
dB
1.6
1.8
LNA 1 dB RF Input Compression Point
–21.0
dBm
Mixer
Mixer Gain
6.9
4.0
7.2
5.0
7.5
6.0
dB
dBm
dB
Mixer IIP3 (60 kHz spacing)
Mixer Noise Figure
10.4
11.0
–13.0
11.6
Mixer 1 dB RF Input Compression Point
dBm
Other
Input Impedance, RF Port
Return Loss at LNA Inputs and Output
Return Loss at Mixer Input and Outputs
LO leakage at RF Port
50
W
–10
–10
dB
dB
1
1
–42
–3
dBm
dBm
msec
LO Input Power
–5
–1
Turn ON/OFF Time
100
Low-Band LO Buffer
V
= +3.75 V, Freq = 1106 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
CC
LO
LOin
A
PARAMETERS
Min
–3s
TYP.
1106
–7
+3s
Max
UNITS NOTES
LO Frequency
1032
1123
MHz
dBm
W
Differential Output Power
Differential Output Impedance
Harmonic Content
Input Power
100
–20
–3
dBc
dBm
–5
–1
Input Impedance
50
W
1
Turn On/Off Time
10
msec
NOTE:
1. External matching network is required.
8
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
V
= +3.75 V, Freq = 1550 MHz, Freq = 1713 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
CC
RF
LO
LOin
A
PARAMETERS
MIN
1515
150
–3s
TYP.
+3s
MAX
1600
185
UNITS NOTES
RF Input Frequency Range
IF Frequency
MHz
MHz
MHz
dB
163
LO Frequency
1665
1785
Power Gain
21.5
34
22.2
47
22.9
60
Power Gain Reduction (Strong Signal Mode—LNA Off)
Noise Figure
dB
3.7
3.9
50
4.1
dB
Input Impedance, RF Port
W
Return Loss at Inputs
–10
dB
1
LO leakage at RF Port
–48
–24
dBm
dBm
dBm
1 dB RF Input Compression Point
RD
IP3 (3 Order Intermodulation Product)
–14
–11.5
–9
Referred to the RF Input Port
(2 x LO) – (2 x RF) Spur Performance
–50 dBm IN Referred to RF Input Port
Measure at LO = 1688 MHz and RF = 1606 MHz
–62
dBc
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 1688 MHz and RF = 1634 MHz.
–102
34
dBc
dB
Image rejection, f +2f
31.5
–5
36.5
–1
RX
IF
Referred to the RF Input Port
LO Input Power
–3
10
dBm
Turn ON/OFF Time
msec
High-Band LO Buffer
V
= +3.75 V, Freq = 1713 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
CC
LO
LOin
A
PARAMETERS
MIN
–3s
TYP.
+3s
MAX
UNITS NOTES
LO Frequency Range
1665
1785
MHz
dBm
W
Differential Output Power
–9
100
–20
–3
Differential Output Impedance
Harmonic Content
Input Power
dBc
dBm
–5
–1
Input Impedance
50
W
1
Turn On/Off Time
10
msec
NOTE:
1. External matching network is required.
9
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Transmit Mixer
CC
V
= +3.75 V, Freq = 1550 MHz, Freq = 1713 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
RF
LO
LOin
A
PARAMETERS
MIN
–3s
TYP.
+3s
MAX
UNITS NOTES
T
Mixer Input Frequency
824
1661
MHz
W
X
X
X
X
T
RF Input Impedance, Balanced
Mixer Output Frequency
IF Load Impedance
200
163
T
T
70
200
2
MHz
W
1000
Maximum T IF Load Capacitance
pF
X
Conversion Power Gain
17
–9
18
–17
20
19
–5
dB
dBm
dBm
dBm
dB
1
1 dB Input Compression Point
IIP2
IIP3
–7
Noise Figure (double sideband)
8.5
Reverse Isolation T –LO
40
40
dB
XIN
IN XIN
IN
Isolation LO –T
dB
NOTES:
1. Input and output ports matched to 50 W.
10
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
SR01802
Figure 3.
SA1921 Dual-Band Test Circuit
11
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
SR01755
Figure 4.
SA1921 Dual-Band Application Circuit
NOTE:
GSM and Satellite frequencies
12
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
PERFORMANCE CHARACTERISTICS
V
= +3.75 V, Freq = 1550 MHz, Freq = 1713 MHz, P
= –3 dBm, T = +25_C; unless otherwise stated.
CC
RF
LO
LOin
A
50.00
16.00
15.00
14.00
13.00
12.00
11.00
10.00
9.00
+85_C
45.00
40.00
35.00
30.00
25.00
+85_C
+25_C
–40_C
+25_C
–40_C
8.00
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.60
3.65
3.70
3.75
3.80
3.85
3.90
V
(V)
V
(V)
CC
CC
SR01734
SR01735
Figure 5.
Low Band Receive Normal I
Figure 6.
High Band Receive Normal I
CC
CC
30
45
28
26
24
22
20
18
16
14
12
10
40
35
30
25
20
150
155
160
165
170
175
180
185
SR01751
150
155
160
165
170
175
180
185
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SR01750
Figure 7.
High Band Gain vs. IF Frequency
Figure 8.
High Band Image Rejection vs. IF Frequency
18
17
16
15
14
13
12
11
10
9
–8.5
–9
–9.5
–10
–10.5
–11
–11.5
–12
–12.5
–13
8
–13.5
150
155
160
165
170
175
180
185
150
155
160
165
170
175
180
185
IF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SR01752
SR01753
Figure 9.
High Band IP3 vs. IF Frequency
Figure 10.
High Band IP2 vs. IF Frequency
13
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
22
21
20
19
18
17
16
15
14
6
5
4
3
2
1
0
–40_C
+25_C
+85_C
860
870
880
890
900
910
920
930
940
950
960
150
155
160
165
170
175
180
185
FREQUENCY (MHz)
IF FREQUENCY (MHz)
SR01754
SR01736
Figure 11. High Band NF vs. IF Frequency
Figure 12.
LB LNA Gain vs. Frequency
–2
3
2.5
–3
–4
+85_C
–5
+85_C
+25_C
2
–6
+25_C
–40_C
–7
1.5
1
–8
–40_C
–9
–10
–11
–12
0.5
0
860
870
880
890
900
910
920
930
940
950
960
860 870 880 890 900 910 920 930 940 950 960
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01737
SR01738
Figure 13.
LB LNA IP3 vs. Frequency
Figure 14.
LB LNA Noise Figure vs. Frequency
12
8
7
6
5
4
3
2
1
0
–40_C
+25_C
10
8
–40_C
+85_C
+25_C
6
+85_C
4
2
0
860 870 880 890 900 910 920 930 940 950 960
860
870
880
890
900
910
920
930
940
950
960
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01740
SR01741
Figure 15.
LB Mixer Gain vs. Frequency
Figure 16.
LB Mixer IP3 vs. Frequency
14
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
16.00
15.00
14.00
28
26
24
22
20
18
16
14
13.00
–40_C
+85_C
12.00
11.00
+25_C
+25_C
+85_C
10.00
–40_C
9.00
8.00
7.00
6.00
860 870 880 890 900 910 920 930 940 950 960
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01742
SR01744
Figure 17.
LB Mixer Noise Figure vs. Frequency
Figure 18.
HB Gain vs. Frequency
6
–8
–9
5
4
3
2
1
0
–10
–11
–12
–13
–14
–15
–16
–17
–18
+85_C
+85_C
+25_C
–40_C
+25_C
–40_C
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01745
SR01746
Figure 19.
HB IP3 vs. Frequency
Figure 20.
HB Noise Figure vs. Frequency
45
40
35
30
25
20
20
18
16
14
12
10
8
+25_C
+85_C
+85_C
+25_C
–40_C
–40_C
6
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01747
SR01748
Figure 21.
HB Image Rejection vs. Frequency
Figure 22.
HB IP2 vs. Frequency
15
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
–15
–17
–10.00
–11.00
–12.00
–13.00
–14.00
–15.00
–16.00
–17.00
–18.00
–19.00
–20.00
–19
+85_C
+85_C
–21
+25_C
+25_C
–23
–40_C
–40_C
–25
–27
–29
–31
–33
–35
860 870 880 890 900 910 920 930 940 950 960
860 870 880 890 900 910 920 930 940 950 960
FREQUENCY (MHz)
FREQUENCY (MHz)
SR01739
SR01743
Figure 23.
LB LNA 1 dB Compression vs. Frequency
Figure 24.
LB Mixer 1 dB Compression vs. Frequency
–20
–22
–24
–26
–28
–30
–32
–34
–36
–38
–40
+85_C
+25_C
–40_C
1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600
FREQUENCY (MHz)
SR01749
Figure 25.
HB 1 dB Compression vs. Frequency
16
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
S-PARAMETERS
1: 56.906Ω
–165.14Ω
200MHz
2: 32.531Ω
–80.145Ω
400MHz
3: 27.213Ω
–50.76Ω
600MHz
4: 22.594Ω
–28.63Ω
6.1759pF
900.125MHz
4
1
3
2
START: 100MHz
STOP: 1.35GHz
SR01632
Figure 26.
Typical S of the Low Band LNA at 3.75 V for the Low Band Receive Normal Mode
11
1: 9.2256U
170.16°
200MHz
2: 8.1698U
142.74°
400MHz
4
3: 6.7943U
124.27°
3
2
600MHz
4: 5.2793U
106.87°
900MHz
1
START: 100MHz
STOP: 1.35GHz
SR01643
Figure 27.
Typical S of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
21
17
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
2: 7.0159mU
75.611°
400MHz
3: 7.8297mU
90.185°
600MHz
4: 14.215mU
120.84°
900MHz
3
4
2
START: 100MHz
STOP: 1.35GHz
SR01644
Figure 28.
Typical S of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
12
1: 35.5Ω
294.66Ω
200MHz
2: 351.72Ω
–537.09Ω
400MHz
3: 77.625Ω
–220.38Ω
600MHz
4: 30.91Ω
–120.37Ω
1.4692pF
900MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
SR01633
Figure 29.
Typical S of the Low Band LNA @ 3.75V for the Low Band Receive Normal Mode
22
18
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 133.16Ω
–326.61Ω
200MHz
2: 74.875Ω
–193.17Ω
400MHz
3: 46.625Ω
–135.03Ω
600MHz
4: 25.117Ω
–83.656Ω
2.1107pF
901.375MHz
1
2
4
3
START: 100MHz
STOP: 1.35GHz
SR01634
Figure 30.
Typical S of Low Band LNA @ 3.75V for Receive Strong Signal Mode
11
1: 82.778mU
56.472°
200MHz
2: 101.74mU
30.696°
400MHz
3: 106.02mU
18.799°
600MHz
4: 97.527mU
1
992.89m°
901.375MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
SR01645
Figure 31.
Typical S of the Low Band LNA @ 3.75V for Receive Strong Signal Mode
21
19
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 82.482mU
48.834°
200MHz
2: 101.97mU
15.44°
400MHz
3: 105.45mU
–4.4673°
600MHz
4: 101.04mU
–32.816°
1
901.375MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
SR01646
Figure 32.
Typical S for the Low Band LNA @ 3.75V for the Receive Strong Signal Mode
12
1: 65.453Ω
303.47Ω
200MHz
2: 381.59Ω
–432.3Ω
400MHz
3: 74.375Ω
–206.25Ω
600MHz
4: 28.723Ω
–108.71Ω
1.6267pF
900MHz
START: 100MHz
STOP: 1.35GHz
SR01635
Figure 33.
Typical S for the Low Band LNA @ 3.75V for the Strong Receive Signal Mode
22
20
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 102.26Ω
–217.14Ω
200MHz
2: 24.902Ω
–100.07Ω
400MHz
3: 20.596Ω
–48.596Ω
600MHz
4: 20.036Ω
–18.022Ω
9.8121pF
900MHz
4
1
2
3
START: 100MHz
STOP: 1.35GHz
SR01636
Figure 34.
Typical S for the Low Band Mixer @ 3.75V for the Receive Normal Mode
11
1: 15.326Ω
–41.15Ω
200MHz
2: 12.527Ω
–7.6484Ω
400MHz
3: 19.854Ω
11.1Ω
600MHz
4: 27.865Ω
–9.7334Ω
18.166pF
3
900.125MHz
4
2
1
START: 100MHz
STOP: 1.35GHz
SR01637
Figure 35.
Typical S for the Low Band LO @ 3.75V for the Low Band Receive Normal Mode
11
21
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 70.324Ω
–120.49Ω
200MHz
2: 45.121Ω
–61.621Ω
400MHz
3: 39.195Ω
–39.092Ω
600MHz
4: 33.025Ω
–24.061Ω
7.3497pF
900MHz
4
3
1
2
START: 100MHz
STOP: 1.35GHz
SR01638
Figure 36.
Typical S for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
11
1: 16.617U
161.94°
200MHz
2: 12.974U
134.43°
400MHz
3: 10.255U
118.75°
4
600MHz
2
3
4: 7.3947U
101.63°
900MHz
1
START: 100MHz
STOP: 1.35GHz
SR01647
Figure 37.
Typical S of the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
21
22
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 4.6161mU
97.782°
200MHz
2: 6.5206mU
88.02°
400MHz
3: 9.1807mU
105.05°
600MHz
4
4: 15.58mU
119.06°
900MHz
3
2
1
START: 100MHz
STOP: 1.35GHz
SR01648
Figure 38.
Typical S for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
12
1: 67.703Ω
295.39Ω
200MHz
2: 436.03Ω
–336.16Ω
400MHz
3: 105.43Ω
–216.6Ω
600MHz
4: 37.477Ω
–123.19Ω
1
1.4355pF
900MHz
2
3
4
START: 100MHz
STOP: 1.35GHz
SR01639
Figure 39.
Typical S for the Low Band LNA @ 3.75V for the Low Band Transmit (Analog) Mode
22
23
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 13.76Ω
–15.057Ω
1.55GHz
2: 10.422Ω
–5.5498Ω
1.85GHz
3: 11.58Ω
–3.0508Ω
1.95GHz
4: 12.092Ω
–616.21mΩ
125.99pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
SR01640
Figure 40.
Typical S for the High Band LNA @ 3.75V for the High Band Receive Normal Mode
11
1: 12.135Ω
–53.891Ω
1.55GHz
2: 9.3379Ω
–38.457Ω
1.85GHz
3: 8.75Ω
–34.238Ω
1.95GHz
4: 8.7695Ω
–31.25Ω
2.4844pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
SR01641
Figure 41.
Typical S for the High Band LNA @ 3.75V for the High Band Receive Strong Signal Mode
11
24
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
1: 20.574Ω
–38.402Ω
1.55GHz
2: 18.104Ω
–22.765Ω
1.85GHz
3: 24.446Ω
–21.71Ω
1.95GHz
4: 20.975Ω
–20.711Ω
3.7486pF
2.05GHz
4
3
2
1
START: 1.40GHz
STOP: 2.65GHz
SR01642
Figure 42.
Typical S of the High Band LO @ 3.75V for the High Band Receive Normal Mode
11
25
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 2. Typical S-Parameters of Low Band LNA at V = +3.75V, LB Receive Normal Mode
CC
FREQ (MHz)
|S11| (U)
0.89
0.87
0.85
0.82
0.79
0.75
0.73
0.70
0.67
0.63
0.61
0.59
0.57
0.55
0.54
0.53
0.52
0.51
0.51
0.51
0.50
0.51
0.51
0.51
0.51
0.52
<S11 (DEG)
|S21| (U)
8.70
8.71
8.53
8.33
8.12
7.75
7.49
7.24
6.97
6.71
6.45
6.23
6.03
5.80
5.56
5.24
4.97
4.75
4.62
4.52
4.34
4.13
3.94
3.72
3.46
3.25
<S21 (DEG)
–165.43
–179.74
170.16
161.71
154.61
148.41
144.24
139.14
134.34
130.13
126.62
122.98
119.16
115.55
111.56
107.93
105.40
104.08
102.52
99.54
|S12| (U)
0.0027
0.0038
0.0049
0.0065
0.0071
0.0078
0.0072
0.0078
0.0071
0.0078
0.0074
0.0079
0.0085
0.0098
0.0107
0.0121
0.0134
0.0155
0.0175
0.0193
0.0217
0.0238
0.0269
0.0297
0.032
<S12 (DEG)
108.66
93.41
|S22| (U)
0.97
0.96
0.96
0.95
0.94
0.93
0.91
0.91
0.90
0.89
0.88
0.88
0.87
0.87
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.86
0.87
0.87
0.87
<S22 (DEG)
51.38
100
–15.49
150
–22.76
31.54
200
–29.87
92.10
19.54
250
–37.01
86.08
11.08
300
–43.99
82.95
4.19
350
–50.47
69.24
–1.56
400
–56.72
71.73
–5.69
450
–63.14
76.99
–10.06
–13.94
–17.69
–21.14
–24.77
–28.09
–31.38
–34.82
–38.18
–41.51
–44.72
–47.96
–51.12
–54.20
–57.23
–60.03
–62.72
–65.57
–68.10
500
–69.13
82.72
550
–75.14
84.15
600
–81.15
87.69
650
–86.84
91.07
700
–92.30
103.71
103.73
113.57
115.45
124.98
127.67
128.87
128.89
129.85
128.74
131.20
130.22
128.07
127.73
750
–97.73
800
–102.99
–108.21
–113.27
–118.12
–122.43
–126.73
–130.83
–134.58
–138.20
–141.69
–145.12
–148.25
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
96.33
93.78
91.13
88.49
86.84
86.69
0.033
26
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 3. Typical S-Parameters of Low Band LNA at V = +3.75V, LB Strong Signal Mode
CC
FREQ (MHz)
|S11| (U)
0.94
0.92
0.90
0.88
0.87
0.85
0.85
0.84
0.83
0.82
0.81
0.80
0.80
0.79
0.78
0.78
0.77
0.77
0.76
0.76
0.76
0.76
0.76
0.76
0.76
0.75
<S11 (DEG)
|S21| (U)
0.05
0.07
0.08
0.09
0.09
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.09
0.09
0.09
0.09
0.09
0.08
0.08
0.07
0.07
0.06
<S21 (DEG)
88.15
68.32
55.23
46.14
39.25
33.96
29.86
26.35
23.06
20.07
17.87
15.28
12.27
9.05
|S12| (U)
0.049
0.069
0.082
0.090
0.094
0.099
0.100
0.102
0.103
0.103
0.103
0.104
0.104
0.103
0.103
0.102
0.099
0.094
0.090
0.086
0.084
0.080
0.076
0.074
0.072
0.068
<S12 (DEG)
|S22| (U)
0.96
0.95
0.93
0.92
0.91
0.90
0.89
0.88
0.88
0.87
0.86
0.85
0.85
0.84
0.83
0.83
0.82
0.82
0.81
0.81
0.81
0.80
0.80
0.80
0.79
0.79
<S22 (DEG)
50.15
100
–8.77
84.08
150
–12.15
–15.01
–17.75
–20.37
–23.15
–25.85
–28.73
–31.65
–34.56
–38.02
–41.41
–44.70
–48.40
–52.30
–56.58
–60.63
–64.88
–69.05
–73.21
–77.26
–81.34
–85.37
–89.33
–93.28
–97.37
63.51
30.01
200
47.79
17.79
250
37.04
9.22
300
28.09
2.68
350
21.40
–2.68
400
14.70
–7.56
450
9.32
–12.06
–16.23
–20.35
–24.23
–28.29
–32.11
–35.85
–39.74
–43.59
–47.19
–50.95
–54.29
–57.67
–60.86
–64.05
–66.96
–69.89
–72.64
–75.21
500
4.37
550
–0.41
600
–5.17
650
–9.07
700
–13.29
–18.00
–23.07
–28.68
–33.94
–39.65
–44.01
–47.95
–52.34
–58.43
–62.90
–68.35
–75.17
–82.58
750
800
5.24
850
2.20
900
–0.26
–2.21
–4.19
–7.58
–11.56
–16.05
–19.50
–23.71
–27.20
–31.20
950
1000
1050
1100
1150
1200
1250
1300
1350
27
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 4. Typical S-Parameters of Low Band LNA at V = +3.75V, LB Transmit On (Analog) Mode
CC
FREQ (MHz)
|S11| (U)
0.80
0.76
0.72
0.67
0.62
0.57
0.55
0.51
0.47
0.44
0.42
0.40
0.38
0.37
0.36
0.35
0.34
0.34
0.34
0.34
0.34
0.35
0.35
0.36
0.36
0.37
<S11 (DEG)
|S21| (U)
16.98
17.07
16.62
15.82
14.89
13.73
12.97
12.27
11.53
10.83
10.24
9.78
<S21 (DEG)
–170.30
173.61
161.95
152.47
144.65
138.33
134.43
129.49
125.20
121.58
118.69
115.74
112.66
109.66
106.44
103.48
101.58
100.76
99.95
|S12| (U)
0.003
0.004
0.005
0.005
0.007
0.007
0.007
0.007
0.008
0.009
0.009
0.009
0.010
0.012
0.012
0.014
0.015
0.017
0.019
0.021
0.023
0.025
0.026
0.030
0.03
<S12 (DEG)
121.40
100.49
87.01
|S22| (U)
0.95
0.94
0.93
0.92
0.91
0.89
0.87
0.86
0.85
0.84
0.84
0.83
0.83
0.83
0.82
0.82
0.82
0.82
0.82
0.83
0.83
0.83
0.83
0.84
0.84
0.85
<S22 (DEG)
100
–18.49
50.55
150
–27.25
30.44
200
–35.34
18.29
250
–43.14
88.74
9.80
300
–50.04
80.87
2.68
350
–55.41
64.95
–2.99
400
–61.58
90.16
–6.38
450
–67.13
90.97
–10.66
–14.35
–17.92
–21.27
–24.85
–28.04
–31.27
–34.68
–38.05
–41.29
–44.70
–47.58
–50.73
–53.76
–56.81
–59.62
–62.32
–65.27
–68.06
500
–72.08
89.19
550
–76.94
96.23
600
–81.92
98.83
650
–86.62
102.03
107.95
108.58
114.73
115.62
116.40
116.04
122.13
122.61
121.36
123.58
125.25
123.53
122.37
122.64
700
–91.05
9.32
750
–95.76
8.89
800
–100.37
–105.06
–109.12
–113.76
–117.50
–121.31
–124.67
–127.76
–130.93
–133.78
–136.90998
–140.02216
8.46
850
7.92
900
7.39
950
7.02
1000
1050
1100
1150
1200
1250
1300
1350
6.81
6.64
97.57
6.36
94.92
6.09
92.79
5.80
90.59
5.48
88.25
5.10
87.00
4.82
87.05
0.03
28
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 5. Typical S-Parameters of Low Band Mixer Input at V = +3.75V, LB Receive Normal Mode
CC
FREQ (MHz)
|S11| (U)
0.85
0.84
0.85
0.85
0.85
0.85
0.85
0.80
0.75
0.70
0.67
0.57
0.53
0.51
0.49
0.48
0.49
0.47
0.47
0.47
0.47
0.48
0.48
0.49
0.50
0.51
<S11 (DEG)
–13.10
–17.65
–23.74
–29.63
–37.49
–45.23
–54.50
–64.14
–73.90
–82.34
–91.47
–100.54
–106.44
–114.37
–123.87
–132.17
–141.42
–150.07
–160.64
–169.49
–179.79
171.14
162.01
154.08
144.55
136.11
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
29
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 6. Typical S-Parameters of Low Band LO Input at V = +3.75V, LB Receive Normal Mode
CC
FREQ (MHz)
|S11| (U)
0.76
0.73
0.70
0.68
0.66
0.64
0.61
0.59
0.55
0.51
0.46
0.38
0.29
0.18
0.10
0.18
0.31
0.42
0.50
0.57
0.61
0.64
0.66
0.68
0.68
0.65
<S11 (DEG)
–55.83
–78.35
–98.64
–116.73
–133.17
–147.82
–161.51
–173.68
173.99
162.15
150.30
140.69
132.76
131.71
171.44
–150.19
–149.41
–157.78
–166.73
–175.14
177.49
170.74
164.22
157.61
150.89
144.80
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
30
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 7. Typical S-Parameters of HB LNA Input at V = +3.75V, HB Receive Normal Mode
CC
FREQ (MHz)
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
2550
2600
2650
|S11| (U)
0.58
0.59
0.59
0.60
0.62
0.63
0.65
0.66
0.66
0.66
0.65
0.63
0.64
0.61
0.60
0.59
0.58
0.58
0.57
0.57
0.57
0.56
0.57
0.57
0.56
0.56
<S11 (DEG)
–135.43
–138.48
–141.42
–144.44
–146.93
–149.85
–154.08
–158.38
–162.67
–167.09
–170.72
–172.76
–175.38
–178.44
–179.38
179.32
178.44
177.61
176.29
175.39
174.35
173.01
172.12
170.91
169.89
168.41
31
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 8. Typical S-Parameters of HB LNA Input at V = +3.75V, HB Strong Signal Mode
CC
FREQ (MHz)
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
2550
2600
2650
|S11| (U)
0.81
0.81
0.81
0.80
0.80
0.80
0.79
0.79
0.79
0.79
0.79
0.79
0.77
0.78
0.79
0.79
0.80
0.79
0.80
0.79
0.79
0.79
0.79
0.79
0.79
0.79
<S11 (DEG)
–73.99
–77.23
–80.62
–84.00
–87.02
–90.35
–93.54
–96.48
–100.32
–103.54
–107.23
–110.05
–113.75
–114.79
–117.61
–120.50
–122.65
–125.91
–128.17
–130.64
–133.19
–135.66
–138.22
–140.56
–143.22
–145.47
32
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Table 9. Typical S-Parameters of HB LO Input at V = +3.75V, HB Receive Normal Mode
CC
FREQ (MHz)
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
2300
2350
2400
2450
2500
2550
2600
2650
|S11| (U)
0.62
0.61
0.60
0.60
0.59
0.59
0.58
0.57
0.57
0.55
0.48
0.43
0.47
0.48
0.50
0.50
0.50
0.50
0.50
0.49
0.49
0.48
0.47
0.46
0.45
0.43
<S11 (DEG)
–87.50
–90.87
–94.44
–98.86
–102.10
–106.34
–110.67
–114.48
–119.86
–126.14
–134.66
–123.95
–126.26
–128.33
–131.34
–135.52
–138.76
–142.68
–146.60
–150.21
–154.30
–157.62
–161.79
–166.32
–170.41
–174.86
33
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
34
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
NOTES
35
1999 Mar 02
Philips Semiconductors
Product specification
Satellite and cellular dual-band RF front-end
SA1921
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1999
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 03–99
Document order number:
9397 750 05353
Philips
Semiconductors
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