SA3601 [NXP]
Low voltage dual-band RF front-end; 低电压的双频段RF前端
| 型号： | SA3601 |
| 厂家： | 
NXP |
| 描述： | Low voltage dual-band RF front-end |
| 文件： | 总14页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA3601
Low voltage dual-band RF front-end
Preliminary specification
1999 Nov 09
Philips
Semiconductors
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
DESCRIPTION
APPLICATIONS
The SA3601 is an integrated dual-band RF front-end that operates at
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and
• 800 to 1000 MHz analog and digital receivers
• 1800 to 2000 MHz digital receivers
• Portable radios
is designed in a 20 GHz f BiCMOS process—QUBiC2. The
T
low-band (LB) receiver is a combined low-noise amplifier (LNA) and
mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with 17 dB
of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer has a
9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
• Mobile communications equipment
The high-band (HB) receiver is a combined low-noise amplifier (LNA)
and mixer, with the low-band and high-band mixers sharing the same
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a
8.5 dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.
PIN CONFIGURATION
FEATURES
• Low current consumption: LB I = 14 mA; HB I = 15.5 mA
CC
CC
32 31 30 29 28 27 26
HBLNA_IN
GND
1
25
• Outstanding low- and high-band noise figure
GND
2
3
4
5
6
7
8
24
23
22
21
20
19
18
V
V
CC
CC
• LNAs with gain control (30 dB gain step)
• LO input and output buffers
• Frequency doubler
HBMXR+_IN
HBMXR–_IN
PD1
LBMXR_IN
GND
TOP VIEW
MXR+_OUT
MXR–_OUT
GND
• On chip logic for network selection and power down
• Very small outline package
V
CC
GND
LBVCO_IN
9
17
10 11 12 13 14 15 16
SR02237
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SA3601
BCC32++
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1
2
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
PIN DESCRIPTIONS
PIN
NO.
PIN
NO.
PIN NAME
HBLNA_IN
GND
DESCRIPTION
Highband LNA input
PIN NAME
LBVCO_IN
DESCRIPTION
1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Lowband VCO input
2
Ground
GND
Ground
3
V
CC
Power supply
MXR–_OUT
MXR+_OUT
GND
Mixer negative output
Mixer positive output
Ground
4
HBMXR+_IN
HBMXR–_IN
PD1
Highband mixer positive input
Highband mixer negative input
Power down control 1
Power supply
5
6
LBMXR_IN
Lowband mixer input
Power supply
Ground
7
V
CC
V
CC
8
GND
Ground
GND
9
PD2
Power down control 2
Ground
LBLNA_IN
GND
Lowband LNA input
Ground
10
11
12
13
14
15
16
GND
GND
Ground
GND
Ground
LBVCO_OUT
GND
Lowband VCO buffered output
Ground
LBLNA_OUT
GND
Lowband LNA output
Ground
HBVCO_IN
PD3
Highband VCO input
Power down control 3
Ground
HBLNA_OUT
GND
Highband LNA output
Ground
GND
GND
Ground
BLOCK DIAGRAM
32
31
30
29
28
27
26
1
25
HBLNA_IN
GND
24
23
22
21
20
19
18
2
3
4
5
6
7
8
GND
V
V
CC
CC
LBMXR_IN
GND
HBMXR+_IN
HBMXR–_IN
PD1
TOP VIEW
MXR+_OUT
MXR–_OUT
GND
x2
12
V
CC
GND
9
17
10
11
13
14
15
16
LBVCO_IN
SR02238
Figure 1.
Block Diagram
3
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
MODE SELECT LOGIC
Cel
LNA
Cel
MXR
PCS
LNA
PCS
MXR
x2
DBL
LB LO
O/P
HB LO
O/P
PD1
PD2
PD3
OPERATING MODE
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Sleep mode
off
off
off
on
off
off
off
off
off
off
on
on
off
off
off
off
off
off
off
off
off
on
off
on
off
off
off
off
on
on
on
on
off
off
off
off
on
on
off
off
off
on
on
on
on
on
off
off
off
off
off
off
off
off
off
off
Tx mode, LO lowband buffer
Rx mode cellular, low gain
Rx mode cellular, high gain
Rx mode PCS, low gain, x2
Rx mode PCS, high gain, x2
Rx mode PCS, low gain, no x2
Rx mode PCS, high gain, no x2
4
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
OPERATION
The SA3601 is a highly integrated dual-band radio frequency (RF)
front-end integrated circuit (IC) targeted for TDMA applications. This
IC is split into separate low-band (LB) and high-band (HB) receivers.
The LB receiver contains a low noise amplifier (LNA) and mixer that
are designed to operate in the cellular frequency range
(869–894MHz). The HB receiver contains an LNA and mixer that
are designed to operate in the PCS frequency range
The desired gain state can be selected by setting the logic pins
(PD1,PD2,PD3) appropriately.
High-Band Receive Section
The HB circuit contains a LNA followed by a Gilbert cell mixer with
differential inputs. The LNA output uses an internal pull-up inductor
to VCC , which eliminates the need for an external pull-up. The
mixer IF outputs are differential and are combined with the low-band
IF mixer outputs thereby eliminating the need for extra output pins.
Similar to the LB LNA, the HB LNA has two gain settings: high gain
(16 dB) and low gain (–15 dB).
(1930–1990 MHz). The SA3601 also contains a frequency doubler
that can drive the HB mixer local oscillator (LO) port, allowing a
single-band voltage controlled oscillator (VCO) to be used to drive
both mixers. Modes for bypassing the doubler are also provided, in
the case where a dual-band VCO is used.
Control Logic Section
The SA3601 has eight modes of operation that control the LNAs,
mixers, LO buffers and doubler. The select pins (PD1,2,3) are used
to change modes of operation. The internal select logic powers the
device down (0,0,0), turns on the LB LO buffer for use in transmit
mode (0,0,1), enables cellular receive mode for high and low gain
(0,1,X), enables PCS receive mode for high and low gain both
without doubler (1,1,X) and with doubler (1,0,X).
Pins PD1, PD2, and PD3, control the logic functions of the SA3601.
The PD1 selects between LB and HB operations. In LB receive
mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are
(0,1,1). In all other modes, the LB LNA is off. The LB mixer is on
when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off.
During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is
on, enabling use of the LO signal for the transmitter.
Low-Band Receive Section
In HB receive mode, the HB LNA is in high gain mode (or on) when
PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB
mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes.
The on-chip frequency doubler (X2) is on in (1,0,X) modes. When
the frequency doubler is on, the input signal from the LB LO buffer is
doubled in frequency, which can then be used to drive the HB mixer
LO port. The frequency doubler can also be bypassed in modes
(1,1,X), in which case the HB mixer is driven directly by an external
2 GHz LO signal.
The LB circuit contains a LNA followed by a wide dynamic range
active mixer. In a typical application circuit, the LNA output uses an
external pull-up inductor to VCC and is AC coupled. The mixer IF
outputs are differential and are combined with the high-band IF
mixer outputs thereby eliminating the need for extra output pins.
External inductors and capacitors can be used to convert the
differential mixer outputs to single-ended. Furthermore, the LNA
provides two gain settings: high gain (17dB) and low gain (–15 dB).
5
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
1
ABSOLUTE MAXIMUM RATINGS
LIMITS
SYMBOL
PARAMETER
UNITS
MIN.
–0.3
–0.3
MAX.
+4.5
V
CC
Supply voltage
Voltage applied to any other pin
Power dissipation, T = +25 °C (still air)
V
V
V
P
V
CC
+0.3
IN
TBD
mW
°C
D
amb
T
J MAX
Maximum junction temperature
Power input/output
150
+20
+10
+150
+85
P
MAX
MAX
dBm
mA
°C
I
DC current into any I/O pin
Storage temperature range
Operating temperature
–10
–65
–40
T
T
STG
°C
O
NOTES:
1. IC is protected for ESD voltages up to 500 V (human body model).
DC ELECTRICAL CHARACTERISTICS
Unless otherwise specified, all Input/Output ports are single-ended.
DC PARAMETERS
V
CC
= +3.0 V, T
= +25°C; unless otherwise specified
amb
TEST CONDITIONS
TESTER LIMITS
SYMBOL
PARAMETER
UNIT
PD1
PD2
0
PD3
MIN
TYP
0.1
MAX
Sleep mode
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
1
µA
mA
mA
mA
mA
mA
mA
mA
V
Tx mode, LO lowband buffer
Rx mode cellular, low gain
Rx mode cellular, high gain
Rx mode PCS, low gain, x2
Rx mode PCS, high gain, x2
Rx mode PCS, low gain, no x2
Rx mode PCS, high gain, no x2
Input HIGH voltage
0
4.3
5.5
12
1
10.1
14
1
16.5
21
I
CC
0
17.5
23.5
10
0
28
1
TBD
TBD
1
15.5
V
IH
0.5xV
V
+0.3
CC
CC
V
Input LOW voltage
–0.3
–5
0.2xV
+5
V
IL
CC
I
Input bias current
Logic 1 or logic 0
µA
BIAS
6
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0 V, f = 881 MHz, f = 963 MHz, T = +25°C, unless otherwise specified
RF
LO
amb
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MIN.
–3 σ
+3 σ
MAX.
Cascaded Gain Section
G
G
LB LNA + Mixer, High Gain
LB LNA + Mixer, Low Gain
Filter loss = 3 dB
Filter loss = 3 dB
20.5
23.5
–8.5
26.5
–5.5
dB
dB
SYS
BYP
–11.5
Low-band LNA Section
f
RF input frequency range
Small signal gain ENABLED
Noise figure ENABLED
Input 3rd order Intercept Point
Input 1 dB Compression Point
Small signal gain BYPASSED
Noise figure BYPASSED
Input 3rd order Intercept Point
Input return loss
869
894
MHz
dB
RF
G
17
1.7
–7
ENA
NF
dB
ENA
IIP3
dBm
dBm
dB
ENA
P1dB
–20
–15
15
ENA
G
BYP
NF
dB
BYP
IIP3
15
dBm
dB
BYP
IN
Z
50 Ω system
50 Ω system
10
Z
OUT
Output return loss
10
dB
1
T
SW
ENABLE/DISABLE speed
20
µs
Low-band Mixer Section
f
RF input frequency range
IF output frequency range
LO input range
869
70
894
200
MHz
MHz
MHz
dB
RF
f
IF
f
LO
939
1100
G
Small signal gain
P
P
P
P
= –5 dBm
= –5 dBm
= –5 dBm
= –5 dBm
9.5
9.5
6
MXR
LO
LO
LO
LO
NF
SSB Noise figure
dB
MXR
IIP3
Input 3rd order Intercept Point
Input 1 dB Compression Point
LO input power range
Input return loss
dBm
dBm
dBm
dB
MXR
P1dB
–14
–5
10
10
MXR
P
–7
–3
LO
Z
50 Ω system
50 Ω system
IN
Z
OUT
Output return loss
dB
Two-tone spurious rejection:
P
LO
= –5 dBm
f
f
=890.0 MHz @–36 dBm
=848.9 MHz @–20 dBm
RF
Tx
2(f –f ), f –f =f /2
–110
–110
RF Tx RF Tx IF
2-Tone
dBm
f
RF
=876.3 MHz @–36 dBm
=848.9 MHz @–20 dBm
3(f –f ), f –f =f /3
RF Tx RF Tx IF
f
Tx
RF–LO
LO–RF
RF to LO isolation
25
40
dB
dB
µs
LO to RF isolation
1
T
SW
ENABLE/DISABLE speed
20
Low-band LO Buffer Section
P
LO Input frequency range
LO Input power
939
–7
1100
–3
MHz
dBm
dBm
dB
LO
P
50 Ω matched LB_VCO_IN
50 Ω matched LB_VCO_OUT
50 Ω system
–5
–7.5
10
IN
P
OUT
LO Output power
Z
Input return loss
IN
Z
Output return loss
Harmonic content
ENABLE/DISABLE speed
50 Ω system
10
dB
OUT
P
LO
= –5 dBm
–20
dBc
µs
1
T
20
SW
7
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0 V, f = 1960 MHz, f = 2042 MHz, T = +25°C, unless otherwise specified
RF
LO
amb
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
MIN.
–3 σ
+3 σ
MAX.
Cascaded Gain Section
G
G
HB LNA + Mixer, High Gain
HB LNA + Mixer, Low Gain
Filter loss = 3 dB
Filter loss = 3 dB
18.5
21.5
–9.5
24.5
–6.5
dB
dB
SYS
BYP
–12.5
High-band LNA Section
f
RF input frequency range
Small signal gain ENABLED
Noise figure ENABLED
Input 3rd order Intercept Point
Input 1 dB Compression Point
Small signal gain BYPASSED
Noise figure BYPASSED
Input 3rd order Intercept Point
Input return loss
1930
1990
MHz
dB
RF
G
16
2.2
–5
ENA
NF
dB
ENA
IIP3
dBm
dBm
dB
ENA
P1dB
–14
–15
15
ENA
G
BYP
NF
dB
BYP
IIP3
15
dBm
dB
BYP
Z
50 Ω system, ENA and BYP
50 Ω system, ENA and BYP
10
IN
Z
OUT
Output return loss
10
dB
1
T
SW
ENABLE/DISABLE speed
20
µs
High-band Mixer Section
f
RF input frequency range
IF output frequency range
LO input range
1930
70
1990
200
MHz
MHz
MHz
dB
RF
f
IF
f
LO
2000
2190
G
Small signal gain
P
LO
P
LO
P
LO
P
LO
P
LO
P
LO
= –5 dBm
= –5 dBm
= –5 dBm
= –5 dBm
= –5 dBm
= –5 dBm
8.5
8.5
9
MXR
SSB Noise figure, doubler off
SSB Noise figure, doubler on
dB
NF
MXR
dB
Input 3rd order Intercept Point, doubler off
Input 3rd order Intercept Point, doubler on
Input 1 dB Compression Point
5.5
3
dBm
dBm
dBm
IIP3
MXR
P1dB
–14
MXR
Half-IF spurious rejection
2(f –f ), f –f =f /2, doubler off
RF LO RF LO IF
–90
–85
f
f
=1972.0 MHz @–36 dBm
RF
f
IF/2 rej.
IF/3 rej.
dBm
dBm
=2013.1 MHz @–5 dBm
LO
Half-IF spurious rejection
2(f –f ), f –f =f /2, doubler on
RF LO RF LO IF
Third-IF spurious rejection
3(f –f ), f –f =f /3
RF LO RF LO IF
=1985.7 MHz @–36 dBm
RF
–114
f
=2013.1 MHz @–5 dBm
LO
Two-tone spurious rejection:
P
LO
= –5 dBm,
f
f
=1933.0 MHz @–36 dBm
=1850.8 MHz @–20 dBm
RF
Tx
f
–f , f –f =f
–70
–115
–125
RF Tx RF Tx IF
2-Tone
f
RF
=1951.0 MHz @–36 dBm
=1909.9 MHz @–20 dBm
dBm
2(f –f ), f –f =f /2
RF Tx RF Tx IF
f
Tx
f
RF
=1937.3 MHz @–36 dBm
=1909.9 MHz @–20 dBm
3(f –f ), f –f =f /3
RF Tx RF Tx IF
f
Tx
P
LO input power range
–7
–5
10
10
40
30
–3
20
dBm
dB
dB
dB
dB
µs
LO
Z
Input return loss
50 Ω system
50 Ω system
IN
Z
OUT
Output return loss
RF to LO isolation
LO to RF isolation
ENABLE/DISABLE speed
RF–LO
LO–RF
1
T
SW
8
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0 V, T = +25°C, unless otherwise specified
amb
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN.
–3 σ
+3 σ
MAX.
High-band LO Buffer Section
P
LO Input frequency range
LO Input power
2000
–7
2190
–3
MHz
dBm
dBm
dB
LO
P
50 Ω matched HB_VCO_IN
50 Ω matched HB_VCO_OUT
50 Ω system
–5
–8
IN
P
OUT
LO Output power
Z
Input return loss
10
IN
Z
Output return loss
Harmonic content
ENABLE/DISABLE speed
50 Ω system
10
dB
OUT
P
LO
= –5 dBm
–20
dBc
µs
1
T
20
SW
x2 LO Doubler Section
f
LO Input frequency
LO Input power
1000
–7
1095
–3
MHz
dBm
dB
LO
P
Z
50 Ω matched LB_VCO_IN
50 Ω system
–5
10
10
IN
Input return loss
IN
Z
OUT
Output return loss
ENABLE/DISABLE speed
50 Ω system
dB
1
T
20
µs
SW
NOTES:
1. Dependent on external components.
9
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
V
BIAS
5K
1
HB LNA IN
0.8
SR01787
V
CC
3, 7, 23
V
CC
V
BIAS
4
5
HB MXR+ IN
HB MXR– IN
1.2
1.2
SR01788
6
9
PD1
PD2
PD3
Apply externally
15
SR01789
V
CC
12
LB VCO OUT
V
CC
– 0.2 V
SR01791
V
V
V
BIAS
CC
BIAS
14
HB VCO IN
1.9
SR01792
10
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
V
CC
17
LB VCO IN
1.0
SR01793
V
CC
2 pF
19
MXR– OUT
V
CC
Pull-up externally to V
CC
2 pF
20
MXR+ OUT
SR01794
V
BIAS
V
CC
22
LB MXR IN
1.2
SR01795
V
BIAS
V
CC
5K
25
LB LNA IN
0.8
SR01796
11
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
PIN NO
PIN MNEMONIC
DC V
EQUIVALENT CIRCUIT
V
CC
28
LB LNA OUT
Pull-up externally to V
CC
SR01797
V
CC
30
HB LNA OUT
SR01786
12
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
HBCC32: plastic, heatsink bottom chip carrier; 32 terminals; body 5 x 5 x 0.65 mm
SOT560-1
13
1999 Nov 09
Philips Semiconductors
Preliminary specification
Low voltage dual-band RF front-end
SA3601
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 04-00
Document order number:
9397 750 07037
Philips
Semiconductors
相关型号：
SA3601W
IC TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PBCC32, 5 X 5 MM, 0.65 MM HEIGHT, HEAT SINK, PLASTIC, MO-217, SOT-560-1, BCC-32, Cellular Telephone Circuit
NXP
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