SA5204D-T [NXP]
RF/Microwave Amplifier, 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SO-8;
| 型号： | SA5204D-T |
| 厂家： | 
NXP |
| 描述： | RF/Microwave Amplifier, 0 MHz - 350 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, PLASTIC, SO-8 放大器 |
| 文件： | 总13页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5204A
Wide-band high-frequency amplifier
Product specification
Replaces data of Feb 25, 1992
1997 Nov 07
IC17 Data Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
DESCRIPTION
PIN CONFIGURATION
The SA5204A family of wideband amplifiers replaces the SA5204
family. The ‘A’ parts are fabricated on a rugged 2µm bipolar process
featuring excellent statistical process control. Electrical
performance is nomically identical to the original parts.
D Packages
1
2
3
4
8
7
6
5
V
V
CC
CC
20dB
The SA5204A is a high-frequency amplifier with a fixed insertion
gain of 20dB. The gain is flat to ±0.5dB from DC to 200MHz. The
-3dB bandwidth is greater than 350MHz. This performance makes
the amplifier ideal for cable TV applications. The SA5204A operates
with a single supply of 6V, and only draws 25mA of supply current,
which is much less than comparable hybrid parts. The noise figure is
4.8dB in a 75Ω system and 6dB in a 50Ω system.
V
V
IN
OUT
GND
GND
GND
GND
TOP VIEW
SR00193
Figure 1. Pin Configuration
The SA5204A is a relaxed version of the SA5205. Minimum
guaranteed bandwidth is relaxed to 350MHz and the “S” parameter
Min/Max limits are specified as typicals only.
FEATURES
• Bandwidth (min.)
200 MHz, ±0.5dB
350 MHz, -3dB
Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The SA5204A solves these
problems by incorporating a wideband amplifier on a single
monolithic chip.
• 20dB insertion gain
• 4.8dB (6dB) noise figure Z =75Ω (Z =50Ω)
O
O
• No external components required
• Input and output impedances matched to 50/75Ω systems
• Surface-mount package available
• Cascadable
The part is well matched to 50 or 75Ω input and output impedances.
The standing wave ratios in 50 and 75Ω systems do not exceed 1.5
on either the input or output over the entire DC to 350MHz operating
range.
• 2000V ESD protection
Since the part is a small, monolithic IC die, problems such as stray
capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.
APPLICATIONS
• Antenna amplifiers
No external components are needed other than AC-coupling
capacitors because the SA5204A is internally compensated and
matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm, respectively, at 100MHz.
• Amplified splitters
• Signal generators
• Frequency counters
• Oscilloscopes
• Signal analyzers
• Broadband LANs
• Networks
The part is well matched for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters, and all kinds of
signal analyzers. Other applications at 50Ω include mobile radio, CB
radio, and data/video transmission in fiber optics, as well as
broadband LANs and telecom systems. A gain greater than 20dB
can be achieved by cascading additional SA5204As in series as
required, without any degradation in amplifier stability.
• Modems
• Mobile radio
• Security systems
• Telecommunications
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline (SO) package
–40 to +85°C
SA5204AD
SOT96-1
2
853-1599 18662
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V
CC
V
IN
Supply voltage
9
5
V
AC input voltage
V
P–P
T
A
Operating ambient temperature range
SA grade
–40 to +85
°C
1, 2
Maximum power dissipation
P
DMAX
T =25°C(still–air)
A
D package
780
150
mW
°C
T
T
Junction temperature
Storage temperature range
J
–55 to +150
°C
STG
Lead temperature
(soldering 60s)
T
SOLD
300
°C
NOTES:
1. Derate above 25°C, at the following rates
D package at 6.2mW/°C
2. See “Power Dissipation Considerations” section.
EQUIVALENT SCHEMATIC
V
CC
R
R
2
1
2
R
0
Q
V
3
OUT
Q
6
Q
V
Q
1
Q
IN
R
4
3
R
F1
R
E2
R
E1
Q
5
R
F2
SR00194
Figure 2. Equivalent Schematic
3
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
DC ELECTRICAL CHARACTERISTICS
V
CC
=6V, Z =Z =Z =50Ω and T =25°C, in all packages, unless otherwise specified.
S
L
O
A
LIMITS
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Max
Min
5
V
CC
Operating supply voltage range
Supply current
Over temperature
Over temperature
f=100MHz, over temperature
f=100MHz
8
V
I
19
16
25
19
33
22
mA
dB
CC
S21
Insertion gain
25
S11
Input return loss
Output return loss
Isolation
dB
dB
dB
DC –550MHz
f=100MHz
12
27
S22
S12
DC –550MHz
f=100MHz
12
–25
–18
350
550
4.8
6.0
+7.0
+4.0
DC –550MHz
±0.5dB
BW
BW
Bandwidth
200
350
MHz
MHz
dB
Bandwidth
–3dB
Noise figure (75Ω)
Noise figure (50Ω)
Saturated output power
1dB gain compression
f=100MHz
f=100MHz
dB
f=100MHz
dBm
dBm
f=100MHz
Third–order intermodulation inter-
cept (output)
f=100MHz
f=100MHz
+17
+24
dBm
dBm
Second–order intermodulation inter-
cept (output)
t
t
Rise time
500
500
ps
ps
R
Propagation delay
P
9
8
7
6
5
35
34
32
30
Z
= 50Ω
O
o
v
= 8v
T
= 25 C
cc
cc
cc
A
o
T
= 25 C
A
28
26
v
v
= 7v
= 6v
24
22
20
v
= 5v
cc
18
16
5
5.5
6
6.5
7
7.5
8
1
2
4
6
8
2
2
4
6
8
10
3
10
10
SUPPLY VOLTAGE—V
FREQUENCY—MHz
SR00195
SR00196
Figure 3. Supply Current vs Supply Voltage
Figure 4. Noise Figure vs Frequency
4
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
25
10
9
V
8V
CC =
8
7
v
= 8v
cc
= 7v
v
cc
6
5
4
3
2
V
6V
CC =
20
15
V
7V
V
5V
CC =
CC =
v
2
= 6v
1
0
–1
cc
v
= 5v
cc
–2
Z
T
= 50Ω
Z
= 50Ω
O
A
O
–3
–4
–5
–6
o
o
= 25 C
T
= 25 C
A
10
1
2
4
6
8
2
4
6
8
3
10
1
2
4
6
8
2
2
4
6
8
3
10
10
10
10
10
FREQUENCY—MHz
FREQUENCY—MHz
SR00197
SR00198
Figure 5. Insertion Gain vs Frequency (S
)
Figure 8. 1dB Gain Compression vs Frequency
21
40
35
30
25
25
o
T
= 55 C
o
A
T
= 25 C
A
20
15
o
= 85 C
T
A
Z
= 50Ω
20
15
10
T
=
O
Ao
o
T
= 25 C
125 C
A
V
Z
= 8V
CC
O
= 50Ω
10
1
2
4
6
8
2
2
4
6
8
3
4
5
6
7
8
9
10
10
10
10
FREQUENCY—MHz
POWER SUPPLY VOLTAGE—V
SR00199
SR00200
Figure 6. Insertion Gain vs Frequency (S
)
Figure 9. Second-Order Output Intercept vs Supply Voltage
21
30
25
11
10
9
8
7
6
5
4
20
V
V
= 7V
= 6V
CC
CC
CC
3
2
1
0
Z
= 50Ω
O
15
10
V
8
= 8V
CC
V
= 5V
o
T
= 25 C
A
–1
–2
–3
–4
–5
–6
Z
= 50Ω
O
A
o
T
= 25 C
5
4
5
6
7
8
9
10
1
2
4
6
2
2
4
6
8
3
10
10
10
POWER SUPPLY VOLTAGE—V
FREQUENCY—MHz
SR00201
SR00202
Figure 7. Saturated Output Power vs Frequency
Figure 10. Third-Order Intercept vs Supply Voltage
5
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
2.0
10
1.9
o
T
= 25 C
= 6V
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
A
CC
–15
Z
T
= 50Ω
O
A
V
o
= 25 C
.
V
= 6V
CC
–20
–25
Z
Z
= 75Ω
= 50Ω
O
O
–30
1
2
4
6
8
2
2
4
6
8
3
10
10
10
1
2
4
6
8
2
2
4
6
8
3
10
10
10
FREQUENCY—MHz
FREQUENCY—MHz
SR00203
SR00204
Figure 11. Input VSWR vs Frequency
Figure 14. Isolation vs Frequency (S )
12
25
20
2.0
v
= 8v
cc
= 7v
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
v
cc
o
T
= 25 C
= 6V
amb
CC
V
v
= 6v
cc
v
= 5v
15
10
cc
Z
Z
= 75Ω
= 50Ω
2
Z
T
= 75Ω
O
O
O
A
o
= 25 C
1
2
4
6
8
2
2
4
6
8
3
10
10
10
FREQUENCY—MHz
1
4
6
8
2
2
4
6
8
3
10
10
10
FREQUENCY—MHz
SR00205
SR00206
Figure 12. Output VSWR vs Frequency
Figure 15. Insertion Gain vs Frequency (S )
21
25
40
o
T
= –55 C
o
A
35
30
T
= 25 C
A
20
15
10
OUTPUT
25
20
o
= 85 C
T
A
T
=
Ao
125 C
V
Z
= 6V
CC
O
= 50Ω
INPUT
Z
= 75Ω
o
O
T
= 25 C
A
V
= 6V
15
10
CC
1
2
4
6
8
2
2
4
6
8
10
3
1
2
4
6
8
2
2
4
6
8
3
10
10
10
10
FREQUENCY—MHz
10
FREQUENCY—MHz
SR00207
SR00208
Figure 13. Input (S ) and Output (S ) Return Loss
Figure 16. Insertion Gain vs Frequency (S )
21
11
22
vs Frequency
6
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
eliminates problems of shunt-feedback loading on the output. The
THEORY OF OPERATION
value of R =140Ω is chosen to give the desired nominal gain. The
F1
The design is based on the use of multiple feedback loops to
provide wide-band gain together with good noise figure and terminal
impedance matches. Referring to the circuit schematic in Figure 17,
the gain is set primarily by the equation:
DC output voltage V
can be determined by:
OUT
V =V –(I +I )R2,(4)
OUT CC C2 C6
where V =6V, R =225Ω, I =8mA and I =5mA.
CC
2
C2
C6
VOUT
From here, it can be seen that the output voltage is approximately
3.1V to give relatively equal positive and negative output swings.
(1)
+ (RF1 ) RE1) ń RE1
VIN
Diode Q is included for bias purposes to allow direct coupling of
5
which is series-shunt feedback. There is also shunt-series feedback
R
to the base of Q . The dual feedback loops stabilize the DC
1
F2
due to R and R which aids in producing wide-band terminal
F2
E2
operating point of the amplifier.
impedances without the need for low value input shunting resistors
that would degrade the noise figure. For optimum noise
The output stage is a Darlington pair (Q and Q ) which increases
6
2
the DC bias voltage on the input stage (Q ) to a more desirable
performance, R and the base resistance of Q are kept as low as
1
E1
1
value, and also increases the feedback loop gain. Resistor R
possible, while R is maximized.
0
F2
optimizes the output VSWR (Voltage Standing Wave Ratio).
The noise figure is given by the following equation:
Inductors L and L are bondwire and lead inductances which are
1
2
roughly 3nH. These improve the high-frequency impedance
matches at input and output by partially resonating with 0.5pF of pad
and package capacitance.
KT
2qlC1
ȡ
ȣ
ƪr
ƫ
b ) RE1
)
(2)
NF + 10Log 1 )
dB
ȧ
ȧ
Ȥ
RO
Ȣ
POWER DISSIPATION CONSIDERATIONS
When using the part at elevated temperature, the engineer should
consider the power dissipation capabilities.
where I =5.5mA, R =12Ω, r =130Ω, KT/q=26mV at 25°C and
R =50 for a 50Ω system and 75 for a 75Ω system.
C1
E1
b
0
At the nominal supply voltage of 6V, the typical supply current is
25mA (32mA max). For operation at supply voltages other than 6V,
see Figure 3 for I versus V curves. The supply current is
The DC input voltage level V can be determined by the equation:
IN
V
IN
=V +(I +I ) R (3)
BE1 C1 C3 E1
CC
CC
inversely proportional to temperature and varies no more than 1mA
between 25°C and either temperature extreme. The change is 0.1%
per °C over the range.
where R =12Ω, V =0.8V, I =5mA and I =7mA (currents rated
E1
BE
C1
C3
at V =6V).
CC
Under the above conditions, V is approximately equal to 1V.
IN
The recommended operating temperature ranges are air-mount
specifications. Better heat-sinking benefits can be realized by
mounting the SO package body against the PC board plane.
Level shifting is achieved by emitter-follower Q and diode Q ,
3
4
which provide shunt feedback to the emitter of Q via R . The use
1
F1
of an emitter-follower buffer in this feedback loop essentially
V
CC
R2
225
R1
650
L2
R0
10
V
Q3
OUT
3nH
Q6
Q2
L1
V
IN
Q4
Q1
R3
140
3nH
RF1
140
RE2
12
RE1
12
Q5
RF2
200
SR00209
Figure 17. Schematic Diagram
7
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
PC BOARD MOUNTING
In order to realize satisfactory mounting of the SA5204A to a PC
board, certain techniques need to be utilized. The board must be
double-sided with copper and all pins must be soldered to their
Actual S-parameter measurements using an HP network analyzer
(model 8505A) and an HP S-parameter tester (models 8503A/B) are
shown in Figure 20.
respective areas (i.e., all GND and V pins on the package). The
CC
Values for the figures below are measured and specified in the data
sheet to ease adaptation and comparison of the SA5204A to other
high-frequency amplifiers.
power supply should be decoupled with a capacitor as close to the
V
CC
pins as possible, and an RF choke should be inserted between
the supply and the device. Caution should be exercised in the
connection of input and output pins. Standard microstrip should be
observed wherever possible. There should be no solder bumps or
burrs or any obstructions in the signal path to cause launching
problems. The path should be as straight as possible and lead
lengths as short as possible from the part to the cable connection.
Another important consideration is that the input and output should
The most important parameter is S . It is defined as the square root
21
of the power gain, and, in decibels, is equal to voltage gain as
shown below:
Z =Z =Z
for the SA5204A
D
IN OUT
2
2
SA5204A
VOUT
ZD
VIN
be AC-coupled. This is because at V =6V, the input is
POUT )
CC
PIN
)
ZD
approximately at 1V while the output is at 3.1V. The output must be
decoupled into a low-impedance system, or the DC bias on the
output of the amplifier will be loaded down, causing loss of output
power. The easiest way to decouple the entire amplifier is by
soldering a high-frequency chip capacitor directly to the input and
output pins of the device. This circuit is shown in Figure 18. Follow
these recommendations to get the best frequency response and
noise immunity. The board design is as important as the integrated
circuit design itself.
Z
D
2
VOUT
ZD
2
POUT
PIN
VOUT
N
+
+
+ PI
2
2
VIN
VIN
ZD
2
P =V
I
I
P =Insertion Power Gain
I
V =Insertion Voltage Gain
I
SCATTERING PARAMETERS
Measured value for the
The primary specifications for the SA5204A are listed as
S-parameters. S-parameters are measurements of incident and
reflected currents and voltages between the source, amplifier, and
load as well as transmission losses. The parameters for a two-port
network are defined in Figure 19.
2
SA5204A = |S
|
= 100
21
POUT
2
NPI
and VI
In decibels:
+
+ | S21
|
+ 100
PIN
VOUT
Ǹ
+
+
PI + S21 + 10
VIN
V
CC
2
P
I(dB)
V
I(dB)
=10 Log | S
|
21
= 20dB
RF CHOKE
= 20 Log S = 20dB
21
DECOUPLING
CAPACITOR
P
I(dB)
= V
= S
= 20dB
I(dB)
21(dB)
Also measured on the same system are the respective voltage
standing wave ratios. These are shown in Figure 21. The VSWR
can be seen to be below 1.5 across the entire operational frequency
range.
5204A
V
V
IN
OUT
AC
AC
COUPLING
CAPACITOR
COUPLING
CAPACITOR
Relationships exist between the input and output return losses and
the voltage standing wave ratios. These relationships are as follows:
SR00210
Figure 18. Circuit Schematic for
Coupling and Power Supply Decoupling
8
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
POWER REFLECTED
FROM INPUT PORT
S
— INPUT RETURN LOSS
S
=
11
11
POWER AVAILABLE FROM
S
21
GENERATOR AT INPUT PORT
REVERSE TRANSDUCER
POWER GAIN
S
=
S
S
— REVERSE TRANSMISSION LOSS
OSOLATION
12
12
21
22
S
S
22
11
S
=
TRANSDUCER POWER GAIN
— FORWARD TRANSMISSION LOSS
OR INSERTION GAIN
21
POWER REFLECTED
FROM OUTPUT PORT
S
12
S
— OUTPUT RETURN LOSS
S
=
22
POWER AVAILABLE FROM
GENERATOR AT OUTPUT PORT
a. Two-Port Network Defined
b.
SR00211
Figure 19.
9
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
50Ω System
75Ω System
25
20
25
v
= 8v
cc
= 7v
v
= 8v
v
cc
= 7v
cc
v
cc
20
15
v
= 6v
cc
v
v
2
= 6v
cc
= 5v
15
10
cc
v
= 5v
cc
Z
T
= 75Ω
O
A
Z
T
= 50Ω
O
A
o
= 25 C
o
= 25 C
10
1
2
4
6
8
2
2
4
6
8
3
10
10
10
1
2
4
6
8
2
4
6
8
3
10
10
10
FREQUENCY—MHz
FREQUENCY—MHz
a. Insertion Gain vs Frequency (S
)
b. Insertion Gain vs Frequency (S )
21
21
10
10
–15
–15
Z
T
= 50Ω
Z
T
= 75Ω
O
A
O
A
o
o
= 25 C
= 25 C
V
= 6V
V
= 6V
CC
CC
–20
–25
–30
–20
–25
–30
1
2
4
6
8
2
2
4
6
8
3
1
2
4
6
8
2
2
4
6
8
3
10
10
10
FREQUENCY—MHz
10
10
10
FREQUENCY—MHz
c. Isolation vs Frequency (S
)
d. S Isolation vs Frequency
12
12
40
35
30
40
35
30
OUTPUT
OUTPUT
25
20
25
20
V
Z
= 6V
CC
= 50Ω
O
INPUT
INPUT
V
Z
= 6V
CC
o
T
= 25 C
A
15
10
= 75Ω
15
10
O
o
T
= 25 C
A
1
2
4
6
8
2
2
4
6
8
3
10
1
2
4
6
8
2
2
4
6
8
3
10
10
10
10
10
FREQUENCY—MHz
FREQUENCY—MHz
e. Input (S ) and Output (S ) Return Loss
f. Input (S ) and Output (S ) Return Loss
11 22
11
22
vs Frequency
vs Frequency
SR00212
Figure 20.
INPUT RETURN LOSS=S dB
1dB from its low power value. The decrease is due to nonlinearities
in the amplifier, an indication of the point of transition between
small-signal operation and the large signal mode.
11
S
11
dB=20 Log | S
|
11
OUTPUT RETURN LOSS=S dB
22
S
dB=20 Log | S
|
The saturated output power is a measure of the amplifier’s ability to
deliver power into an external load. It is the value of the amplifier’s
output power when the input is heavily overdriven. This includes the
sum of the power in all harmonics.
22
22
INPUT VSWR=≤1.5
OUTPUT VSWR=≤1.5
INTERMODULATION INTERCEPT TESTS
The intermodulation intercept is an expression of the low level
linearity of the amplifier. The intermodulation ratio is the difference in
dB between the fundamental output signal level and the generated
distortion product level. The relationship between intercept and
1DB GAIN COMPRESSION AND SATURATED
OUTPUT POWER
The 1dB gain compression is a measurement of the output power
level where the small-signal insertion gain magnitude decreases
10
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
intermodulation ratio is illustrated in Figure 22, which shows product
output levels plotted versus the level of the fundamental output for
two equal strength output signals at different frequencies. The upper
line shows the fundamental output plotted against itself with a 1dB to
1dB slope. The second and third order products lie below the
fundamentals and exhibit a 2:1 and 3:1 slope, respectively.
second and third order intermodulation ratios in dB. The
intermodulation intercept is an indicator of intermodulation
performance only in the small signal operating range of the amplifier.
Above some output level which is below the 1dB compression point,
the active device moves into large-signal operation. At this point the
intermodulation products no longer follow the straight line output
slopes, and the intercept description is no longer valid. It is therefore
The intercept point for either product is the intersection of the
extensions of the product curve with the fundamental output.
important to measure IP and IP at output levels well below 1dB
2
3
compression. One must be careful, however, not to select too low
levels because the test equipment may not be able to recover the
signal from the noise. For the SA5204A we have chosen an output
level of –10.5dBm with fundamental frequencies of 100.000 and
100.01MHz, respectively.
The intercept point is determined by measuring the intermodulation
ratio at a single output level and projecting along the appropriate
product slope to the point of intersection with the fundamental.
When the intercept point is known, the intermodulation ratio can be
determined by the reverse process. The second order IMR is equal
to the difference between the second order intercept and the
fundamental output level. The third order IMR is equal to twice the
difference between the third order intercept and the fundamental
output level. These are expressed as:
ADDITIONAL READING ON SCATTERING
PARAMETERS
For more information regarding S-parameters, please refer to
High-Frequency Amplifiers by Ralph S. Carson of the University of
Missouri, Rolla, Copyright 1985; published by John Wiley & Sons,
Inc.
IP =P
+IMR
2
2
OUT
OUT
OUT
IP =P
3
+IMR /2
3
“S-Parameter Techniques for Faster, More Accurate Network Design”,
HP App Note 95-1, Richard W. Anderson, 1967, HP Journal.
where P
is the power level in dBm of each of a pair of equal
level fundamental output signals, IP and IP are the second and
2
3
“S-Parameter Design”, HP App Note 154, 1972.
third order output intercepts in dBm, and IMR and IMR are the
2
3
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
2.0
1.9
o
T
= 25 C
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
o
= 25 C
A
T
V
amb
CC
V
= 6V
CC
= 6V
.
Z
= 75Ω
= 50Ω
O
Z
Z
= 75Ω
= 50Ω
O
O
Z
O
1
2
4
6
8
2
2
4
6 8
3
1
2
4
6
8
2
2
4
6 8
3
10
10
10
FREQUENCY—MHz
10
10
10
FREQUENCY—MHz
a. Input VSWR vs Frequency
b. Output VSWR vs Frequency
SR00213
Figure 21. Input/Output VSWR vs Frequency
+30
+20
THIRD ORDER
INTERCEPT POINT
2ND ORDER
INTERCEPT
POINT
1dB
COMPRESSION POINT
+10
0
FUNDAMENTAL
RESPONSE
-10
-20
-30
-40
2ND ORDER
RESPONSE
3RD ORDER
RESPONSE
-60
-50
-40
-30
-20
-10
0
+10
+20
+30
+40
INPUT LEVEL dBm
SR00214
Figure 22.
11
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
SO8: plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
12
1997 Nov 07
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
SA5204A
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
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Philips Semiconductors
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