SA5212A [NXP]
Transimpedance amplifier 140MHz; 跨阻放大器140MHz的
| 型号： | SA5212A |
| 厂家： | 
NXP |
| 描述： | Transimpedance amplifier 140MHz |
| 文件： | 总20页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA5212A
Transimpedance amplifier (140MHz)
Product specification
1998 Oct 07
Replaces datasheet NE/SA/SE5212A of 1995 Apr 26
IC19 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
DESCRIPTION
PIN CONFIGURATION
The SA5212A is a 14kΩ transimpedance, wideband, low noise
differential output amplifier, particularly suitable for signal recovery in
fiber optic receivers and in any other applications where very low
signal levels obtained from high-impedance sources need to be
amplified.
N, FE, D Packages
1
2
3
4
8
7
6
5
I
GND
2
IN
OUT (–)
V
CC
GND
2
GND
GND
1
1
FEATURES
OUT (+)
• Extremely low noise: 2.5pA/√Hz
• Single 5V supply
SD00336
• Large bandwidth: 140MHz
• Differential outputs
Figure 1. Pin Configuration
• Low input/output impedances
• 14kΩ differential transresistance
• ESD hardened
• Wideband gain block
• Medical and scientific instrumentation
• Sensor preamplifiers
• Single-ended to differential conversion
• Low noise RF amplifiers
APPLICATIONS
• Fiber-optic receivers, analog and digital
• RF signal processing
• Current-to-voltage converters
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
-40°C to +85°C
ORDER CODE
DWG #
SOT96-1
SOT97-1
0580A
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Ceramic Dual In-Line Package (DIP)
SA5212AD
SA5212AN
SA5212AFE
-40°C to +85°C
-40°C to +85°C
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
SA5212A
UNIT
V
CC
Power Supply
6
V
1
Power dissipation, T =25°C (still air)
A
8-Pin Plastic DIP
8-Pin Plastic SO
8-Pin Cerdip
1100
750
mW
mW
mw
mA
°C
P
D MAX
750
2
I
Maximum input current
5
IN MAX
T
A
Operating ambient temperature range
Operating junction
-40 to 85
-55 to 150
-65 to 150
T
J
°C
T
Storage temperature range
°C
STG
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
8-Pin Plastic DIP: 110°C/W
8-Pin Plastic SO: 160°C/W
8-Pin Cerdip: 165°C/W
2. The use of a pull-up resistor to V , for the PIN diode, is recommended
CC
2
1998 Oct 07
853-1266 20142
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNIT
V
V
CC
Supply voltage range
T
A
Ambient temperature ranges
Junction temperature ranges
°C
T
J
°C
DC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V =5V, unless otherwise specified. Typical data applies at V =5V
CC
CC
1
and T =25°C .
A
SYMBOL
PARAMETER
Input bias voltage
TEST CONDITIONS
Min
0.55
2.5
Typ
0.8
3.3
Max
1.05
3.8
UNIT
V
V
V
IN
Output bias voltage
V
±
O
V
Output offset voltage
120
33
mV
mA
mA
µA
µA
OS
CC
I
Supply current
20
3
26
4
I
Output sink/source current
Maximum input current (2% linearity)
Maximum input current overload threshold
OMAX
I
IN
Test Circuit 6, Procedure 2
Test Circuit 6, Procedure 4
±40
±60
±80
±120
I
N MAX
NOTES:
1. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
3
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
AC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V =5V, unless otherwise specified. Typical data applies at V =5V
CC
CC
5
and T =25°C .
A
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
UNIT
DC tested, R = ∞
Test Circuit 6, Procedure 1
L
R
T
Transresistance (differential output)
9.0
14
19
kΩ
R
R
R
Output resistance (differential output)
Transresistance (single-ended output)
Output resistance (single-ended output)
DC tested
14
4.5
7
30
7
46
9.5
23
Ω
kΩ
Ω
O
DC tested, R = ∞
T
L
DC tested
Test Circuit 1
D package,
15
O
f
Bandwidth (-3dB)
T = 25°C
A
100
140
MHz
3dB
N, FE packages,
T = 25°C
A
100
70
120
110
10
R
C
Input resistance
150
18
Ω
IN
IN
Input capacitance
pF
∆R/∆V
Transresistance power supply sensitivity
V
CC
= 5 ±0.5V
9.6
%/V
Transresistance ambient
temperature sensitivity
D package
∆T = T -T
∆R/∆T
0.05
2.5
20
%/°C
A
A MAX A MIN
RMS noise current spectral density
(referred to input)
Test Circuit 2
f = 10MHz T = 25°C
I
pA/√Hz
N
T
A
T = 25°C Test Circuit 2
A
∆f = 50MHz
∆f = 100MHz
∆f = 200MHz
∆f = 50MHz
∆f = 100MHz
∆f = 200MHz
Integrated RMS noise current over the band-
width (referred to input) C = 0
1
27
40
22
32
52
S
I
nA
C = 1pF
S
Any package
DC tested
2
2
PSRR
PSRR
Power supply rejection ratio
∆V = 0.1V
20
33
dB
dB
CC
Equivalent AC
Test Circuit 3
Any package
Power supply rejection ratio
(ECL configuration)
1
f = 0.1MHz
23
Test Circuit 4
R = ∞
Test Circuit 6, Procedure 3
L
V
V
Maximum differential output voltage swing
Maximum input amplitude for output duty
1.7
3.2
V
P-P
O MAX
Test Circuit 5
325
2.0
mV
P-P
IN MAX
3
cycle of 50 ±5%
4
t
R
Rise time for 50mV output signal
Test Circuit 5
ns
NOTES:
1. Package parasitic capacitance amounts to about 0.2pF.
2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V line.
CC
3. Guaranteed by linearity and over load tests.
4. t defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.
R
5. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
4
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TEST CIRCUITS
SINGLE-ENDED
DIFFERENTIAL
V
V
OUT
OUT
R
+
2 @ S21 @ R
R
+
+
4 @ S21 @ R
t
t
V
V
IN
IN
O Ť1 S22Ť *
)
O Ť1 S22Ť *
)
R
+
Z
33
R
2Z
66
O
O
1
*
S22
1 * S22
SPECTRUM ANALYZER
NETWORK ANALYZER
V
A
= 60DB
CC
V
1µF
1µF
33
33
OUT
S-PARAMETER TEST SET
IN DUT
NC
PORT 1
PORT 2
OUT
GND
R
= 50
L
V
CC
GND
1
2
1µF
1µF
33
OUT
OUT
0.1µF
R = 1k
Z
= 50Ω
O
IN DUT
33
R
L
= 50Ω
50
GND
GND
1
2
Test Circuit 1
Test Circuit 2
SD00337
Figure 2. Test Circuits 1 and 2
NETWORK ANALYZER
5V + ∆V
S-PARAMETER TEST SET
10µF
10µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
10µF
0.1µF
16
CAL
V
CC
1µF
33
OUT
DUT
OUT
50
TEST
100
BAL.
NC
TRANSFORMER
UNBAL.
IN
1
NH0300HB
33
1µF
GND
GND
2
SD00338
Test Circuit 3
Figure 3. Test Circuit 3
5
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TEST CIRCUITS (Continued)
NETWORK ANALYZER
–5.2V + ∆V
S-PARAMETER TEST SET
10µF
10µF
0.1µF
PORT 1
PORT 2
CURRENT PROBE
1mV/mA
0.1µF
16
CAL
GND
GND
2
1
1µF
33
OUT
50
TEST
100
BAL.
NC
TRANSFORMER
UNBAL.
IN
NH0300HB
33
OUT
1µF
V
CC
Test Circuit 4
SD00339
Figure 4. Test Circuit 4
PULSE GEN.
5V
1µF
33
OUT
A
B
Z
= 50Ω
0.1µF
IN
O
1k
DUT
33
OSCILLOSCOPE
= 50Ω
Z
O
OUT
1µF
50
Measurement done using
differential wave forms
GND
GND
2
1
SD00545
Test Circuit 5
Figure 5. Test Circuit 5
6
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TEST CIRCUITS (Continued)
Typical Differential Output Voltage
vs Current Input
5V
+
–
OUT +
V
(V)
OUT
IN
DUT
OUT –
I
(µA)
IN
GND
GND
2
1
2.00
1.60
1.20
0.80
0.40
0.00
–0.40
–0.80
–1.20
–1.60
–2.00
–200
–160
–120
–80
–40
0
40
80
120
160
200
CURRENT INPUT (µA)
NE5212A TEST CONDITIONS
Procedure 1
R
R
measured at 30µA
T
T
= (V
O1
– V )/(+30µA – (–30µA))
O2
Where: V
Measured at I = +30µA
O1
IN
V
Measured at I = –30µA
O2
IN
Procedure 2
Linearity = 1 – ABS((V
– V
OB
) / (V
O3
– V ))
O4
OA
Where: V
Measured at I = +60µA
O3
IN
V
Measured at I = –60µA
O4
IN
V
+ R @ () 60mA) ) V
OA
T
OB
V
+ R @ (* 60mA) ) V
OB
= V
T
OB
Procedure 3
Procedure 4
V
– V
OMAX
Where: V
O7
O8
Measured at I = +130µA
O7
IN
V
Measured at I = –130µA
O8
IN
I
Test Pass Conditions:
IN
V
– V
O5
> 20mV and V – V > 20mV
06 O5
O7
Where: V
Measured at I = +800µA
O5
IN
V
Measured at I = –80µA
O6
O7
O8
IN
V
Measured at I = +130µA
IN
V
Measured at I = –130µA
IN
SD00340
Test Circuit 8
Figure 6. Test Circuit 8
7
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TYPICAL PERFORMANCE CHARACTERISTICS
NE5212A Supply Current
vs Temperature
NE5212A Input Bias Voltage
NE5212A Output Bias Voltage
vs Temperature
vs Temperature
3.50
3.45
3.40
3.35
3.30
3.25
950
900
850
800
750
700
650
600
30
29
28
27
26
25
V
= 5.0V
V
= 5.0V
V = 5.0V
CC
CC
CC
PIN 5
PIN 7
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
NE5212A Differential Output Swing
vs Temperature
NE5212A Output Offset Voltage
vs Temperature
NE5212A Differential Transresistance
vs Temperature
3.8
80
17.0
V
= 5.0V
CC
DC TESTED
V
V
= 5.0V
= V
60
CC
OS
3.6
3.4
3.2
3.0
2.8
2.6
2.4
V
= 5.0V
CC
DC TESTED
16.5
16.0
15.5
15.0
14.5
14.0
– V
OUT7
OUT5
R
= ∞
L
40
R
= ∞
L
20
0
–20
–40
–60
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
–60 –40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
NE5212A Output Resistance
vs Temperature
NE5212A Power Supply Rejection Ratio
vs Temperature
NE5212A Typical
Bandwidth Distribution
(75 Parts from 3 Wafer Lots)
40
17
16
15
14
13
12
11
10
9
V
= 5.0V
50
40
30
20
10
0
V
= 5.0V
CC
∆V
PIN 5
SINGLE-ENDED
= 50Ω
CC
DC TESTED
39
38
37
36
35
34
33
N, F PKG
= ±0.1V
CC
V
T
= 5.0V
CC
= 25°C
DC TESTED
R
L
OUTPUT REFERRED
A
PIN 7
PIN 5
112.5 122.5 132.5 142.5 152.5 162.5
FREQUENCY (MHz)
–60 –40 –20
0
20 40 60 80 100 120 140
–60–40 –20
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
SD00341
Figure 7. Typical Performance Characteristics
8
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gain vs Frequency
Gain vs Frequency
Output Resistance
vs Frequency
12
11
10
9
5.5V
11
10
9
5.5V
5.0V
4.5V
80
70
60
50
40
30
20
10
5.0V
N PKG
8
8
V
= 5V
CC
= 25°C
7
7
T
A
4.5V
6
N PKG
PIN 5
= 25°C
6
PIN 5
N PKG
PIN 7
5
5
T
A
4
T
= 25°C
4
A
3
3
PIN 7
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
Output Resistance
vs Frequency
Gain vs Frequency
Gain vs Frequency
100
90
80
70
60
50
40
30
20
10
11
125°C
25°C
85°C
–55°C
11
–55°C
125°C
–55°C
D PKG
= 25°C
10
9
10
9
T
A
V
= 5V
CC
8
8
7
7
–55°C
125°C
6
6
125°C
N PKG
PIN 5
N PKG
PIN 7
5
5
V
= 5V
4
CC
4
V
= 5V
CC
3
3
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
Gain and Phase Shift
vs Frequency
Gain and Phase Shift
vs Frequency
Gain and Phase Shift
vs Frequency
φ
11
10
9
11
10
9
11
10
9
–45
N PKG
PIN 5
–180
–180
8
φ
8
φ
8
V
= 5V
= 25°C
CC
–135
7
N PKG
PIN 7
7
D PKG
PIN 7
–270
–360
7
–270
–360
T
A
6
6
6
V
T
= 5V
CC
V
T
= 5V
5
CC
= 25°C
5
5
= 25°C
A
–225
4
A
4
4
3
3
3
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
SD00342
Figure 8. Typical Performance Characteristics (cont.)
9
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Output Voltage
vs Input Current
Differential Output Voltage
vs Input Current
Gain and Phase Shift
vs Frequency
2.0
4.5
5.5V
5.0V
125°C
85°C
11
10
9
25°C
4.5V
–55°C
0
8
7
–90
–180
D PKG
PIN 5
0
6
V
T
= 5V
125°C
CC
= 25°C
5
A
85°C
4
5.5V
–55°C25°C
3
5.0V
4.5V
2.0
–150.0
–2.0
0.1
1
10
100
0
150.0
–150.0
0
150.0
FREQUENCY (MHz)
INPUT CURRENT (µA)
INPUT CURRENT (µA)
Group Delay
vs Frequency
Differential Output Voltage
vs Input Current
10
8
2.000
25°C 85°C
–55°C
6
125°C
4
2
0
0
–55°C
25°C
85°C
125°C
–2.000
0.1 20
40
60
80 100 120 140 160
–150.0
150.0
FREQUENCY (MHz)
INPUT CURRENT (µA)
Output Step Response
V
T
= 5V
CC
= 25°C
A
20mV/Div
0
2
4
6
8
10
(ns)
12
14
16
18
20
SD00343
Figure 9. Typical Performance Characteristics (cont.)
10
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
VIN
IIN
RF
7.2K
70
THEORY OF OPERATION
RIN
+
+
+
+ 103W
1 ) AVOL
Transimpedance amplifiers have been widely used as the
preamplifier in fiber-optic receivers. The SA5212A is a wide
bandwidth (typically 140MHz) transimpedance amplifier designed
primarily for input currents requiring a large dynamic range, such as
those produced by a laser diode. The maximum input current before
output stage clipping occurs at typically 240µA. The SA5212A is a
bipolar transimpedance amplifier which is current driven at the input
and generates a differential voltage signal at the outputs. The
forward transfer function is therefore a ratio of the differential output
voltage to a given input current with the dimensions of ohms. The
main feature of this amplifier is a wideband, low-noise input stage
which is desensitized to photodiode capacitance variations. When
connected to a photodiode of a few picoFarads, the frequency
response will not be degraded significantly. Except for the input
stage, the entire signal path is differential to provide improved
power-supply rejection and ease of interface to ECL type circuitry. A
block diagram of the circuit is shown in Figure 10. The input stage
(A1) employs shunt-series feedback to stabilize the current gain of
the amplifier. The transresistance of the amplifier from the current
More exact calculations would yield a higher value of 110Ω.
Thus C and R will form the dominant pole of the entire amplifier;
IN
IN
1
f*3dB
+
2p RIN CIN
Assuming typical values for R = 7.2kΩ, R = 110Ω, C = 10pF
F
IN
IN
1
f*3dB
+
+ 145MHz
2p (110) 10 @ 10*12
The operating point of Q1, Figure 2, has been optimized for the
lowest current noise without introducing a second dominant pole in
the pass-band. All poles associated with subsequent stages have
been kept at sufficiently high enough frequencies to yield an overall
single pole response. Although wider bandwidths have been
achieved by using a cascade input stage configuration, the present
solution has the advantage of a very uniform, highly desensitized
frequency response because the Miller effect dominates over the
external photodiode and stray capacitances. For example, assuming
source to the emitter of Q is approximately the value of the
3
feedback resistor, R =7kΩ. The gain from the second stage (A2)
F
a source capacitance of 1pF, input stage voltage gain of 70, R
60Ω then the total input capacitance, C = (1+7.5) pF which will
lead to only a 12% bandwidth reduction.
=
IN
and emitter followers (A3 and A4) is about two. Therefore, the
differential transresistance of the entire amplifier, R is
IN
T
V
OUT(diff)
IIN
RT
+
+ 2RF + 2(7.2K) + 14.4kW
OUTPUT +
The single-ended transresistance of the amplifier is typically 7.2kΩ.
A3
The simplified schematic in Figure 11 shows how an input current is
converted to a differential output voltage. The amplifier has a single
input for current which is referenced to Ground 1. An input current
from a laser diode, for example, will be converted into a voltage by
INPUT
A1
A2
the feedback resistor R . The transistor Q1 provides most of the
F
open loop gain of the circuit, A
≈70. The emitter follower Q
2
VOL
minimizes loading on Q . The transistor Q , resistor R , and V
B1
R
1
4
7
F
A4
provide level shifting and interface with the Q – Q differential
OUTPUT –
15
16
pair of the second stage which is biased with an internal reference,
. The differential outputs are derived from emitter followers Q
SD00327
V
B2
–
11
Q
Q
which are biased by constant current sources. The collectors of
Figure 10. SA5212A – Block Diagram
12
– Q are bonded to an external pin, V
, in order to reduce
11
12
CC2
the feedback to the input stage. The output impedance is about 17Ω
single-ended. For ease of performance evaluation, a 33Ω resistor is
used in series with each output to match to a 50Ω test system.
NOISE
Most of the currently installed fiber-optic systems use non-coherent
transmission and detect incident optical power. Therefore, receiver
noise performance becomes very important. The input stage
achieves a low input referred noise current (spectral density) of
3.5pA/√Hz. The transresistance configuration assures that the
external high value bias resistors often required for photodiode
biasing will not contribute to the total noise system noise. The
BANDWIDTH CALCULATIONS
The input stage, shown in Figure 12, employs shunt-series feedback
to stabilize the current gain of the amplifier. A simplified analysis can
determine the performance of the amplifier. The equivalent input
capacitance, C , in parallel with the source, I , is approximately
IN
S
equivalent input
noise current is strongly determined by the
7.5pF, assuming that C =0 where C is the external source
RMS
S
S
quiescent current of Q , the feedback resistor R , and the
capacitance.
Since the input is driven by a current source the input must have a
low input resistance. The input resistance, R , is the ratio of the
1
F
bandwidth; however, it is not dependent upon the internal
Miller-capacitance. The measured wideband noise was 52nA RMS
in a 200MHz bandwidth.
IN
incremental input voltage, V , to the corresponding input current, I
IN
IN
and can be calculated as:
11
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
V
CC1
R
V
CC2
R
R
R
13
1
3
12
Q
Q
Q
11
2
4
INPUT
+
Q
Q
12
3
Q
1
Q
Q
OUT–
OUT+
15
R
16
R
2
R
14
15
GND
1
R
+
7
PHOTODIODE
VB2
R
5
R
4
GND
2
SD00328
Figure 11. Transimpedance Amplifier
No. of incident photons/sec= where P=optical incident power
P
V
CC
I
C1
R3
R1
hc
No. of incident photons/sec =
l
INPUT
Q2
I
B
where P = optical incident power
No. of generated electrons/sec =
where η = quantum efficiency
I
Q3
IN
Q1
P
hc
l
R2
h @
I
V
F
EQ3
V
IN
R
F
no. of generated electron hole paris
+
R4
no. of incident photons
P
hc
l
NI + h @
@ e Amps (Coulombsńsec.)
SD00329
-19
where e = electron charge = 1.6 × 10 Coulombs
h@e
Figure 12. Shunt-Series Input Stage
Responsivity R =
Amp/watt
hc
l
I + P @ R
DYNAMIC RANGE
The electrical dynamic range can be defined as the ratio of
maximum input current to the peak noise current:
Assuming a data rate of 400 Mbaud (Bandwidth, B=200MHz), the
noise parameter Z may be calculated as:
1
IEQ
qB
52 @ 10*9
(1.6 @ 10*19)(200 @ 106)
Amp
Amp
Electrical dynamic range, D , in a 200MHz bandwidth assuming
ǒ Ǔ
Z +
+
+ 1625
E
I
= 120µA and a wideband noise of I =52nA
for an
INMAX
EQ
RMS
external source capacitance of C = 1pF.
S
where Z is the ratio of
noise output to the peak response to a
RMS
single hole-electron pair. Assuming 100% photodetector quantum
efficiency, half mark/half space digital transmission, 850nm
lightwave and using Gaussian approximation, the minimum required
(Max. input current)
(Peak noise current)
DE
+
(120 @ 10*6
)
-9
optical power to achieve 10 BER is:
DE(dB) + 20log
DE(dB) + 20log
Ǹ
( 2 52nA)
hc
l
P
avMIN + 12 B Z + 12 (2.3 @ 10*19
)
(120mA)
(73nA)
+ 64dB
200 @ 106 1625 + 897nW + * 30.5dBm,
In order to calculate the optical dynamic range the incident optical
power must be considered.
where h is Planck’s Constant, c is the speed of light, λ is the
wavelength. The minimum input current to the SA5212A, at this
input power is:
For a given wavelength λ;
hc
l
l
Energy of one Photon =
watt sec (Joule)
IavMIN + qP
avMIN hc
-34
Where h=Planck’s Constant = 6.6 × 10 Joule sec.
897 @ 10*9 @ 1.6 @ 10*19
+
8
c = speed of light = 3 × 10 m/sec
2.3 @ 10*19
= 624nA
c / λ = optical frequency
12
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
Choosing the maximum peak overload current of I
maximum mean optical power is:
=120µA, the
As with any high-frequency device, some precautions must be
avMAX
observed in order to enjoy reliable performance. The first of these is
the use of a well-regulated power supply. The supply must be
capable of providing varying amounts of current without significantly
changing the voltage level. Proper supply bypassing requires that a
good quality 0.1µF high-frequency capacitor be inserted between
OUT–
V
R = 560
IN
IN
IN
IN
NE5212A
OUT+
V
CC1
and V
, preferably a chip capacitor, as close to the package
CC2
pins as possible. Also, the parallel combination of 0.1µF capacitors
with 10µF tantalum capacitors from each supply, V and V , to
CC1
CC2
a. Non-inverting 20dB Amplifier
the ground plane should provide adequate decoupling. Some
applications may require an RF choke in series with the power
supply line. Separate analog and digital ground leads must be
maintained and printed circuit board ground plane should be
employed whenever possible.
OUT+
V
R = 560
NE5212A
OUT–
IN
BASIC CONFIGURATION
b. Inverting 20dB Amplifier
A trans resistance amplifier is a current-to-voltage converter. The
forward transfer function then is defined as voltage out divided by
current in, and is stated in ohms. The lower the source resistance,
the higher the gain. The SA5212A has a differential transresistance
of 14kΩ typically and a single-ended transresistance of 7kΩ
typically. The device has two outputs: inverting and non-inverting.
The output
OUT+
V
R = 560
NE5212A
OUT–
IN
c. Differential 20dB Amplifier
voltage in the differential output mode is twice that of the output
voltage in the single-ended mode. Although the device can be used
without coupling capacitors, more care is required to avoid upsetting
the internal bias nodes of the device. Figure 13 shows some basic
configurations.
SD00344
Figure 13. Variable Gain Circuit
2.3 @ 10*19(120 @ 10*6
1.6 @ 10*19
)
hcIavMAX
PavMAX
+
+
lq
VARIABLE GAIN
= 172µW or –7.6dBm
Thus the optical dynamic range, D is:
Figure 14 shows a variable gain circuit using the SA5212A and the
SA5230 low voltage op amp. This op amp is configured in a
non-inverting gain of five. The output drives the gate of the SD210
DMOS FET. The series resistance of the FET changes with this
output voltage which in turn changes the gain of the SA5212A. This
circuit has a distortion of less than 1% and a 25dB range, from
-42.2dBm to -15.9dBm at 50MHz, and a 45dB range, from -60dBm
O
D
= P
- P
= -30.5 -(-7.6) = 22.8dB.
O
avMAX
avMIN
This represents the maximum limit attainable with the SA5212A
operating at 200MHz bandwidth, with a half mark/half space digital
transmission at 820nm wavelength.
to -14.9dBm at 10MHz with 0 to 1V of control voltage at V
.
CC
APPLICATION INFORMATION
Package parasitics, particularly ground lead inductances and
parasitic capacitances, can significantly degrade the frequency
response. Since the SA5212A has differential outputs which can
feed back signals to the input by parasitic package or board layout
capacitances, both peaking and attenuating type frequency
response shaping is possible. Constructing the board layout so that
Ground 1 and Ground 2 have very low impedance paths has
produced the best results. This was accomplished by adding a
ground-plane stripe underneath the device connecting Ground 1,
Pins 8–11, and Ground 2, Pins 1 and 2 on opposite ends of the
SO14 package. This ground-plane stripe also provides isolation
OUT+
0.1µF
RF
IN
SD210
IN
NE5212A
RF
OUT
51
OUT–
+5V
V
CC
0–5V
0–1V
between the output return currents flowing to either V
or Ground
CC2
10k
2 and the input photodiode currents to flowing to Ground 1. Without
this ground-plane stripe and with large lead inductances on the
board, the part may be unstable and oscillate near 800MHz. The
easiest way to realize that the part is not functioning normally is to
measure the DC voltages at the outputs. If they are not close to their
quiescent values of 3.3V (for a 5V supply), then the circuit may be
oscillating. Input pin layout necessitates that the photodiode be
physically very close to the input and Ground 1. Connecting Pins 3
and 5 to Ground 1 will tend to shield the input but it will also tend to
increase the capacitance on the input and slightly reduce the
bandwidth.
2.4k
SD00345
Figure 14. Variable Gain Circuit
13
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
16MHZ CRYSTAL OSCILLATOR
DIGITAL FIBER OPTIC RECEIVER
Figures 16 and 17 show a fiber optic receiver using off-the-shelf
components.
Figure 15 shows a 16MHz crystal oscillator operating in the series
resonant mode using the SA5212A. The non-inverting input is fed
back to the input of the SA5212A in series with a 2pF capacitor. The
output is taken from the inverting output.
The receiver shown in Figure 16 uses the SA5212A, the Philips
Semiconductors 10116 ECL line receiver, and Philips/Amperex
BPF31 PIN diode. The circuit is a capacitor-coupled receiver and
utilizes positive feedback in the last stage to provide the hysteresis.
The amount of hysteresis can be tailored to the individual application
by changing the values of the feedback resistors to maintain the
desired balance between noise immunity and sensitivity. At room
temperature, the circuit operates at 50Mbaud with a BER of 10E-10
and over the automotive temperature range at 40Mbaud with a BER
of 10E-9. Higher speed experimental diodes have been used to
operate this circuit at 220Mbaud with a BER of 10E-10.
+5V
OUT+
NE5212A
OUT–
IN
Figure 17 depicts a TTL receiver using the SA5212A and the
SA5214 fast amplifier system along with the Philips/Amperex PIN
diode. The system shown is optimized for 50 Mb/s Non Return to
Zero (NRZ) data. A link status indication is provided along with a
jamming function when the input level is below a
SD00346
Figure 15. 16MHz Crystal Oscillator
user-programmable threshold level.
V
EE
1
V
1
1.0µF
V
BB
BB
V
CC
+5.0
4.7
510
510
0.01µF
1k
510
1k
1k
15
1/3
10116
0.1µF
0.1µF
100pF
100pF
1
2
9
16
5
4
2
13
12
7
6
ECL
ECL
1
7
5
1/3
10116
1/3
10116
NE5212A
10
8
3
6
14
1k
4
3
11
BPF31
8
0.01µF
1k
0.01µF
510
510
1k
1
510
–15V
V
0.1µF
0.01µF
1
V
V
BB
2.7µH
0.1µF
BB
EE
–5.2V
V
EE
4.7µF
4.7µF
NOTE:
1. Tie all V
points together.
BB
SD00347
Figure 16. ECL Fiber Optic Receiver
14
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
+V
CC
GND
47µF
C1
C2
L1
10µH
R1
100
.01µF
C5
C3
D1
LED
R2
220
1.0µF
10µF
LED
OUT+
1
GND
IN
20
19
1
1
1B
5
6
4
3
C7
C9
100pF
.01µF
C
PKDET
2
IN
GND
2
GND
V
1A
100pF
C4
.01µF
THRESH
3
OUT–
18
CC
C
C
7
2
1
AZP
C6
C8
0.1µF
GND
A
I
IN
GND
2
4
5
17
16
AZN
8
BPF31
OPTICAL
INPUT
R3
47k
FLAG
JAM
OUT
2B
L2
10µH
6
7
15
14
IN
8B
V
V
CCD
CCA
OUT
2A
C11
C10
10µF
8
13
12
IN
R
.01µF
8A
GND
TTL
D
9
HYST
R
PKDET
OUT
10
11
L3
10µH
C13
.01µF
C12
10µF
R4
5.1k
V
(TTL)
OUT
SD00348
Figure 17. A 50Mb/s TTL Digital Fiber Optic Receiver
15
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
8
GND2
I
1
IN
2
7
OUT–
V
CC
6
3
GND2
GND1
GND1
5
4
OUT+
ECN No.: 99918
1990 Jul 5
SD00489
Figure 18. SA5212A Bonding Diagram
carriers, it is impossible to guarantee 100% functionality through this
process. There is no post waffle pack testing performed on
individual die.
Die Sales Disclaimer
Due to the limitations in testing high frequency and other parameters
at the die level, and the fact that die electrical characteristics may
shift after packaging, die electrical parameters are not specified and
die are not guaranteed to meet electrical characteristics (including
temperature range) as noted in this data sheet which is intended
only to specify electrical characteristics for a packaged device.
Since Philips Semiconductors has no control of third party
procedures in the handling or packaging of die, Philips
Semiconductors assumes no liability for device functionality or
performance of the die or systems on any die sales.
All die are 100% functional with various parametrics tested at the
wafer level, at room temperature only (25°C), and are guaranteed to
be 100% functional as a result of electrical testing to the point of
wafer sawing only. Although the most modern processes are
utilized for wafer sawing and die pick and place into waffle pack
Although Philips Semiconductors typically realizes a yield of 85%
after assembling die into their respective packages, with care
customers should achieve a similar yield. However, for the reasons
stated above, Philips Semiconductors cannot guarantee this or any
other yield on any die sales.
16
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
DIP8: plastic dual in-line package; 8 leads (300 mil)
SOT97-1
17
1998 Oct 07
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
SO8: plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
18
1998 Oct 07
0.055 (1.40)
0.030 (0.76)
0.055 (1.40)
0.030 (0.76)
NOTES:
1. Controlling dimension: Inches. Millimeters are
shown in parentheses.
2. Dimension and tolerancing per ANSI Y14. 5M-1982.
0.303 (7.70)
3. “T”, “D”, and “E” are reference datums on the body
and include allowance for glass overrun and meniscus
on the seal line, and lid to base mismatch.
– E –
0.245 (6.22)
4. These dimensions measured with the leads
constrained to be perpendicular to plane T.
5. Pin numbers start with Pin #1 and continue
counterclockwise to Pin #8 when viewed
from the top.
PIN # 1
– D –
0.100 (2.54) BSC
0.408 (10.36)
0.376 (9.55)
0.320 (8.13)
0.070 (1.78)
0.050 (1.27)
0.290 (7.37)
(NOTE 4)
0.175 (4.45)
0.145 (3.68)
0.200 (5.08)
0.165 (4.19)
– T –
SEATING
PLANE
0.035 (0.89)
0.020 (0.51)
0.165 (4.19)
0.125 (3.18)
BSC
0.300 (7.62)
(NOTE 4)
0.023 (0.58)
0.015 (0.38)
T
E
D
0.010 (0.254)
0.395 (10.03)
0.015 (0.38)
0.300 (7.62)
0.010 (0.25)
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 10-98
Document order number:
9397 750 04625
Philips
Semiconductors
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