SA5230FE [NXP]

Low voltage operational amplifier; 低电压运算放大器
SA5230FE
型号: SA5230FE
厂家: NXP    NXP
描述:

Low voltage operational amplifier
低电压运算放大器

运算放大器 放大器电路
文件: 总17页 (文件大小:193K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
NE/SA5230  
Low voltage operational amplifier  
Product specification  
1994 Aug 31  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
DESCRIPTION  
PIN CONFIGURATION  
The NE5230 is a very low voltage operational amplifier that can  
perform with a voltage supply as low as 1.8V or as high as 15V. In  
addition, split or single supplies can be used, and the output will  
swing to ground when applying the latter. There is a bias adjusting  
pin which controls the supply current required by the device and  
thereby controls its power consumption. If the part is operated at  
±0.9V supply voltages, the current required is only 110µA when the  
current control pin is left open. Even with this low power  
consumption, the device obtains a typical unity gain bandwidth of  
180kHz. When the bias adjusting pin is connected to the negative  
supply, the unity gain bandwidth is typically 600kHz while the supply  
current is increased to 600µA. In this mode, the part will supply full  
power output beyond the audio range.  
N, D, FE Packages  
1
2
3
4
8
7
6
5
NC  
NC  
–IN  
+IN  
V
CC  
+
OUTPUT  
V
EE  
BIAS ADJ.  
SP00250  
Figure 1. Pin Configuration  
The NE5230 also has a unique input stage that allows the  
common-mode input range to go above the positive and below the  
negative supply voltages by 250mV. This provides for the largest  
possible input voltages for low voltage applications. The part is also  
internally-compensated to reduce external component count.  
APPLICATIONS  
Portable precision instruments  
Remote transducer amplifier  
Portable audio equipment  
The NE5230 has a low input bias current of typically ±40nA, and a  
large open-loop gain of 125dB. These two specifications are  
beneficial when using the device in transducer applications. The  
large open-loop gain gives very accurate signal processing because  
of the large “excess” loop gain in a closed-loop system.  
Rail-to-rail comparators  
Half-wave rectification without diodes  
The output stage is a class AB type that can swing to within 100mV  
of the supply voltages for the largest dynamic range that is needed  
in many applications. The NE5230 is ideal for portable audio  
equipment and remote transducers because of its low power  
consumption, unity gain bandwidth, and 30nV/Hz noise  
specification.  
Remote temperature transducer with 4 to 20mA output  
transmission  
FEATURES  
Works down to 1.8V supply voltages  
Adjustable supply current  
Low noise  
Common-mode includes both rails  
V  
within 100mV of both rails  
OUT  
ORDERING INFORMATION  
DESCRIPTION  
TEMPERATURE RANGE  
0 to +70°C  
ORDER CODE  
NE5230D  
DWG #  
SOT96-1  
SOT97-1  
SOT96-1  
0580A  
8-Pin Plastic Small Outline (SO) Package  
8-Pin Plastic Dual In-Line Package (DIP)  
8-Pin Plastic Small Outline (SO) Package  
8-Pin Ceramic Dual In-Line Package (CERDIP)  
8-Pin Plastic Dual In-Line Package (DIP)  
0 to +70°C  
NE5230N  
-40°C to +85°C  
-40°C to +85°C  
-40°C to +85°C  
SA5230D  
SA5230FE  
SA5230N  
SOT97-1  
2
1994 Aug 31  
853-0942 13721  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
18  
UNIT  
V
V
V
V
Single supply voltage  
Dual supply voltage  
CC  
±9  
V
S
1
Input voltage  
±9 (18)  
V
IN  
1
Differential input voltage  
±V  
S
V
V
V
P
Common-mode voltage (positive)  
Common-mode voltage (negative)  
V
+0.5  
V
CM  
CM  
D
CC  
V
-0.5  
V
EE  
2
Power dissipation  
500  
150  
mW  
°C  
s
2
T
J
Operating junction temperature  
2, 3  
80Output short-circuit duration to either power supply pin  
Storage temperature  
Indefinite  
-65 to 150  
300  
T
T
°C  
°C  
STG  
Lead soldering temperature (10sec max)  
SOLD  
NOTES:  
1. Can exceed the supply voltages when V ≤ ±7.5V (15V).  
S
2. The maximum operating junction temperature is 150°C. At elevated temperatures, devices must be derated according to the package ther-  
mal resistance and device mounting conditions. Derate above 25°C at the following rates:  
FE package at 6.7mW/°C  
N package at 9.5mW/°C  
D package at 6.25mW/°C  
3. Momentary shorts to either supply are permitted in accordance to transient thermal impedance limitations determined by the package and  
device mounting conditions.  
RECOMMENDED OPERATING CONDITIONS  
PARAMETER  
RATING  
1.8 to 15  
UNIT  
Single supply voltage  
V
V
V
V
Dual supply voltage  
±0.9 to ±7.5  
Common-mode voltage (positive)  
Common-mode voltage (negative)  
V
CC  
+0.25  
V
EE  
-0.25  
Temperature  
NE grade  
SA grade  
0 to 70  
-40 to 85  
°C  
°C  
3
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
DC AND AC ELECTRICAL CHARACTERISTICS  
Unless otherwise specified, ±0.9V V +7.5V or equivalent single supply, R =10k, full input common-mode range, over full operating  
S
L
temperature range.  
NE/SA5230  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
BIAS  
UNIT  
Min  
Typ  
0.4  
3
Max  
3
T =25°C  
A
Any  
Any  
V
V
Offset voltage  
mV  
OS  
T =25°C  
A
4
Drift  
Any  
2
5
µV/°C  
OS  
T =25°C  
High  
Low  
High  
Low  
High  
Low  
High  
Low  
High  
Low  
High  
Low  
Low  
High  
Low  
High  
Low  
High  
Low  
High  
Any  
3
50  
A
T =25°C  
A
3
30  
I
I
I
I
Offset current  
nA  
nA/°C  
nA  
OS  
100  
60  
0.5  
0.3  
40  
1.4  
1.4  
150  
60  
Drift  
OS  
B
T =25°C  
A
T =25°C  
A
20  
Bias current  
Drift  
200  
150  
4
2
nA/°C  
µA  
B
2
4
T =25°C  
110  
600  
160  
750  
250  
800  
550  
1.6  
600  
1.7  
A
T =25°C  
A
V =±0.9V  
S
I
S
Supply current  
T =25°C  
320  
1.1  
A
T =25°C  
A
V =±7.5V  
S
µA  
+
V
6mV, T =25°C  
V -0.25  
V +0.25  
OS  
A
V
Common-mode input range  
Common-mode rejection ratio  
V
CM  
+
Any  
V
V
R =10k, V =±7.5V,  
S
CM  
Any  
85  
95  
T =25°C  
A
CMRR  
PSRR  
V =±7.5V  
dB  
S
R =10k, V =±7.5V  
Any  
High  
Low  
High  
Low  
Any  
80  
90  
85  
75  
80  
4
S
CM  
T =25°C  
A
105  
95  
T =25°C  
A
Power supply rejection ratio  
dB  
source  
V =±7.5V  
S
10  
15  
5
sink  
source  
sink  
V =±7.5V  
S
Any  
5
V =±7.5V  
S
Any  
1
V =±7.5V  
S
Any  
2
6
I
L
Load current  
mA  
source  
sink  
V =±0.9V, T =25°C  
High  
High  
High  
High  
High  
Low  
High  
Low  
4
6
S
A
V =±0.9V, T =25°C  
5
7
S
A
source  
sink  
V =±7.5V, T =25°C  
16  
32  
2000  
750  
S
A
V =±7.5V, T =25°C  
S
A
R =10k, T =25°C  
120  
60  
V/mV  
V/mV  
L
A
R =10k, T =25°C  
L
A
A
VOL  
Large-signal open-loop gain  
V =±7.5V  
S
100  
50  
4
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
DC AND AC ELECTRICAL CHARACTERISTICS (Continued)  
NE/SA5230  
SYMBOL  
PARAMETER  
Output voltage swing  
Slew rate  
TEST CONDITIONS  
T =25°C +SW  
BIAS  
UNIT  
Min  
750  
Typ  
800  
800  
Max  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
High  
Low  
High  
Low  
Any  
High  
Low  
High  
Low  
A
T =25°C -SW  
750  
A
V =±0.9V  
mV  
S
+SW  
-SW  
700  
700  
V
OUT  
T =25°C +SW  
A
7.30  
-7.32  
7.25  
-7.30  
7.35  
-7.35  
7.30  
-7.35  
0.25  
0.09  
0.6  
V =±7.5V  
T =25°C -SW  
A
S
V
+SW  
-SW  
T =25°C  
A
SR  
V/µs  
T =25°C  
A
C =100pF, T =25°C  
L
A
BW  
Inverting unity gain bandwidth  
Phase margin  
MHz  
Deg.  
µs  
C =100pF, T =25°C  
0.25  
70  
L
A
θ
C =100pF, T =25°C  
L A  
M
C =100pF, 0.1%  
L
2
t
S
Settling time  
C =100pF, 0.1%  
L
5
R =0, f=1kHz  
S
30  
V
INN  
Input noise  
nV/Hz  
R =0, f=1kHz  
S
60  
V =±7.5V  
S
High  
High  
0.003  
0.002  
A =1, V =500mV, f=1kHz  
V
IN  
THD  
Total Harmonic Distortion  
%
V =±0.9V  
S
A =1, V =500mV, f=1kHz  
V
IN  
5
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
The input stage was designed to overcome two important problems  
for rail-to-rail capability. As the common-mode voltage moves from  
the range where only the NPN pair was operating to where both of  
the input pairs were operating, the effective transconductance would  
change by a factor of two. Frequency compensation for the ranges  
where one input pair was operating would, of course, not be optimal  
for the range where both pairs were operating. Secondly, fast  
changes in the common-mode voltage would abruptly saturate and  
restore the emitter current sources, causing transient distortion.  
These problems were overcome by assuring that only the input  
transistor pair which is able to function properly is active. The NPN  
THEORY OF OPERATION  
Input Stage  
Operational amplifiers which are able to function at minimum supply  
voltages should have input and output stage swings capable of  
reaching both supply voltages within a few millivolts in order to  
achieve ease of quiescent biasing and to have maximum  
input/output signal handling capability. The input stage of the  
NE5230 has a common-mode voltage range that not only includes  
the entire supply voltage range, but also allows either supply to be  
exceeded by 250mV without increasing the input offset voltage by  
more than 6mV. This is unequalled by any other operational  
amplifier today.  
pair is normally activated by the current source I through Q5 and  
B1  
the current mirror Q6 and Q7, assuming the PNP pair is  
non-conducting. When the common-mode input voltage passes  
In order to accomplish the feat of rail-to-rail input common-mode  
range, two emitter-coupled differential pairs are placed in parallel so  
that the common-mode voltage of one can reach the positive supply  
rail and the other can reach the negative supply rail. The simplified  
schematic of Figure 2 shows how the complementary  
below the reference voltage, V =0.8V at the base of Q5, the  
B1  
emitter current is gradually steered toward the PNP pair, away from  
the NPN pair. The transfer of the emitter currents between the  
complementary input pairs occurs in a voltage range of about  
120mV around the reference voltage V . In this way the sum of the  
B1  
emitter-coupler transistors are configured to form the basic input  
stage cell. Common-mode input signal voltages in the range from  
emitter currents for each of the NPN and PNP transistor pairs is kept  
constant; this ensures that the transconductance of the parallel  
combination will be constant, since the transconductance of bipolar  
transistors is proportional to their emitter currents.  
0.8V above V to V are handled completely by the NPN pair, Q3  
EE  
CC  
and Q4, while common-mode input signal voltages in the range of  
to 0.8V above V are processed only by the PNP pair, Q1 and  
V
EE  
EE  
An essential requirement of this kind of input stage is to minimize  
the changes in input offset voltage between that of the NPN and  
PNP transistor pair which occurs when the input common-mode  
Q2. The intermediate range of input voltages requires that both the  
NPN and PNP pairs are operating. The collector currents of the  
input transistors are summed by the current combiner circuit  
composed of transistors Q8 through Q11 into one output current.  
Transistor Q8 is connected as a diode to ensure that the outputs of  
Q2 and Q4 are properly subtracted from those of Q1 and Q3.  
voltage crosses the internal reference voltage, V . Careful circuit  
B1  
layout with a cross-coupled quad for each input pair has yielded a  
typical input offset voltage of less than 0.3mV and a change in the  
input offset voltage of less than 0.1mV.  
V
CC  
R11  
R10  
+
V
b2  
V
Q11  
Q10  
I
b1  
Q4  
Q3  
Q2  
Q1  
V
V
IN+  
IN–  
I
OUT  
Q9  
Q8  
Q5  
+
V
Q7  
b1  
Q6  
R8  
R9  
V
V
EE  
SL00251  
Figure 2. Input Stage  
6
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
diodes D1 and D2 are proportional to the logarithm of the square of  
Output Stage  
the reference current I . When the diode characteristics and  
B1  
Processing output voltage swings that nominally reach to less than  
100mV of either supply voltage can only be achieved by a pair of  
complementary common-emitter connected transistors. Normally,  
such a configuration causes complex feed-forward signal paths that  
develop by combining biasing and driving which can be found in  
previous low supply voltage designs. The unique output stage of the  
NE5230 separates the functions of driving and biasing, as shown in  
the simplified schematic of Figure 3, and has the advantage of a  
shorter signal path which leads to increasing the effective  
bandwidth.  
temperatures of the pairs Q1, D1 and Q3, Q2 are equal, the relation  
I ×I =I ×I is satisfied.  
OP ON B1 B1  
Separating the functions of biasing and driving prevents the driving  
signals from becoming delayed by the biasing circuit. The output  
Darlington transistors are directly accessible for in-phase driving  
signals on the bases of Q5 and Q2. This is very important for simple  
high-frequency compensation. The output transistors can be  
high-frequency compensated by Miller capacitors CM1A and CM1B  
connected from the collectors to the bases of the output Darlington  
transistors.  
This output stage consists of two parts: the Darlington output  
transistors and the class AB control regulator. The output transistor  
Q3 connected with the Darlington transistors Q4 and Q5 can source  
up to 10mA to an output load. The output of NPN Darlington  
connected transistors Q1 and Q2 together are able to sink an output  
current of 10mA. Accurate and efficient class AB control is  
necessary to insure that none of the output transistors are ever  
completely cut off. This is accomplished by the differential amplifier  
(formed by Q8 and Q9) which controls the biasing of the output  
transistors. The differential amplifier compares the summed voltages  
across two diodes, D1 and D2, at the base of Q8 with the summed  
voltages across the base-emitter diodes of the output transistors Q1  
and Q3. The base-emitter voltage of Q3 is converted into a current  
by Q6 and R6 and reconverted into a voltage across the  
A general-purpose op amp of this type must have enough open-loop  
gain for applications when the output is driving a low resistance  
load. The NE5230 accomplishes this by inserting an intermediate  
common-emitter stage between the input and output stages. The  
three stages provide a very large gain, but the op amp now has  
three natural dominant poles — one at the output of each  
common-emitter stage. Frequency compensation is implemented  
with a simple scheme of nested, pole-splitting Miller integrators. The  
Miller capacitors CM1A and CM1B are the first part of the nested  
structure, and provide compensation for the output and intermediate  
stages. A second pair of Miller integrators provide pole-splitting  
compensation for the pole from the input stage and the pole  
resulting from the compensated combination of poles from the  
intermediate and output stages. The result is a stable,  
base-emitter diode of Q7 and R7. The summed voltage across the  
base-emitter diodes of the output transistors Q3 and Q1 is  
proportional to the logarithm of the product of the push and pull  
internally-compensated op amp with a phase margin of 70 degrees.  
currents I and I , respectively. The combined voltages across  
OP  
ON  
V
CC  
R6  
I
I
I
b3  
b1  
b2  
Q3  
Q6  
Q5  
V
b5  
I
OP  
Q4  
CM1B  
CM1A  
V
OUT  
Q2  
V
b2  
I
ON  
Q8  
Q9  
R7  
D1  
Q7  
Q1  
I
b4  
I
b5  
D2  
V
EE  
SL00252  
Figure 3. Output Stage  
7
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
triangular waveforms. The gain-bandwidth can be varied from  
between 250kHz at low bias to 600kHz at high bias current. The  
slew rate range is 0.08V/µs at low bias and 0.25V/µs at high bias.  
THERMAL CONSIDERATIONS  
When using the NE5230, the internal power dissipation capabilities  
of each package should be considered. Philips Semiconductors  
does not recommend operation at die temperatures above 110°C in  
the SO package because of its inherently smaller package mass.  
Die temperatures of 150°C can be tolerated in all the other  
packages. With this in mind, the following equation can be used to  
estimate the die temperature:  
800  
700  
600  
500  
T = T + (P × θ  
)
(1)  
J
A
D
JA  
400  
300  
Where  
TA 5 AmbientTemperature  
TJ + Die Temperature  
PD 5 Power Dissipation  
200  
+ (ICC x VCC  
)
qJA 5 Packagethermalresistance  
100  
100  
+ 270oCńW for SO * 8 in PC  
500  
600700  
200  
300  
400  
board mounting  
UNITY GAIN BANDWIDTH (kHz)  
See the packaging section for information regarding other methods  
of mounting.  
a. Unity Gain Bandwidth vs Power Supply Current for  
V
CC  
= ±0.9V  
θ
θ
=100°C/W for the plastic DIP;  
=110°C/W for the ceramic DIP.  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
JA  
JA  
V
= 15V  
T
= 25°C  
CC  
CC  
CC  
A
V
V
= 12V  
= 9V  
The maximum supply voltage for the part is 15V and the typical  
supply current is 1.1mA (1.6mA max). For operation at supply  
voltages other than the maximum, see the data sheet for I versus  
V
V
= 6V  
= 3V  
CC  
CC  
CC  
V
curves. The supply current is somewhat proportional to  
CC  
V
V
= 2V  
temperature and varies no more than 100µA between 25°C and  
either temperature extreme.  
CC  
CC  
= 1.8V  
Operation at higher junction temperatures than that recommended is  
possible but will result in lower MTBF (Mean Time Between  
Failures). This should be considered before operating beyond  
recommended die temperature because of the overall reliability  
degradation.  
0
1
2
3
4
5
10  
10  
10  
10  
10  
()  
10  
R
ADJ  
b. I Current vs Bias Current Adjusting Resistor for  
CC  
Several Supply Voltages  
SL00253  
DESIGN TECHNIQUES AND APPLICATIONS  
The NE5230 is a very user-friendly amplifier for an engineer to  
design into any type of system. The supply current adjust pin (Pin 5)  
can be left open or tied through a pot or fixed resistor to the most  
negative supply (i.e., ground for single supply or to the negative  
supply for split supplies). The minimum supply current is achieved  
by leaving this pin open. In this state it will also decrease the  
bandwidth and slew rate. When tied directly to the most negative  
Figure 4.  
The full output power bandwidth range for V equals 2V, is above  
40kHz for the maximum bias current setting and greater than 10kHz  
at the minimum bias current setting.  
CC  
If extremely low signal distortion (<0.05%) is required at low supply  
voltages, exclude the common-mode crossover point (V ) from the  
common-mode signal range. This can be accomplished by proper  
bias selection or by using an inverting amplifier configuration.  
B1  
supply, the device has full bandwidth, slew rate and I . The  
CC  
programming of the current-control pin depends on the trade-offs  
which can be made in the designer’s application. The graph in  
Most single supply designs necessitate that the inputs to the op amp  
Figure 4 will help by showing bandwidth versus I . As can be seen,  
CC  
be biased between V and ground. This is to assure that the input  
the supply current can be varied anywhere over the range of 100µA  
to 600µA for a supply voltage of 1.8V. An external resistor can be  
inserted between the current control pin and the most negative  
supply. The resistor can be selected between 1to 100kto  
provide any required supply current over the indicated range. In  
addition, a small varying voltage on the bias current control pin could  
be used for such exotic things as changing the gain-bandwidth for  
voltage controlled low pass filters or amplitude modulation.  
Furthermore, control over the slew rate and the rise time of the  
amplifier can be obtained in the same manner. This control over the  
slew rate also changes the settling time and overshoot in pulse  
response applications. The settling time to 0.1% changes from 5µs  
at low bias to 2µs at high bias. The supply current control can also  
be utilized for wave-shaping applications such as for pulse or  
CC  
signal swing is within the working common-mode range of the  
amplifier. This leads to another helpful and unique property of the  
NE5230 that other CMOS and bipolar low voltage parts cannot  
achieve. It is the simple fact that the input common-mode voltage  
can go beyond either the positive or negative supply voltages. This  
benefit is made very clear in a non-inverting voltage-follower  
configuration. This is shown in Figure 5 where the input sine wave  
allows an undistorted output sine wave which will swing less than  
100mV of either supply voltage. Many competitive parts will show  
severe clipping caused by input common-mode limitations. The  
NE5230 in this configuration offers more freedom for quiescent  
biasing of the inputs close to the positive supply rail where similar op  
amps would not allow signal processing.  
8
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
when no current is flowing, but also can power the transducer at the  
remote location. Usually the transducer itself is not equipped to  
provide for the current transmission. The unique features of the  
NE5230 can provide high output current capability coupled with low  
power consumption. It can be remotely connected to the transducer  
to create a current loop with minimal external components. The  
circuit for this is shown in Figure 6. Here, the part is configured as a  
voltage-to-current, or transconductance amplifier. This is a novel  
circuit that takes advantage of the NE5230’s large open-loop gain.  
In AC applications, the load current will decrease as the open-loop  
gain rolls off in magnitude. The low offset voltage and current  
sinking capabilities of the NE5230 must also be considered in this  
application.  
V+  
V+  
+
V–  
V–  
V+  
V
I
CC  
OUT  
3
2
+
REMOTE  
POWER  
SUPPLY  
7
+
V
NE5230  
6
NE5230  
5
4
V
EE  
T
R
A
N
S
D
U
C
E
R
V–  
V+  
R
L
V
IN  
R
C
OTHER  
PARTS  
NOTES:  
1. I  
= V  
OUT  
IN/RC  
V
V–  
* 1.8V * V  
For R = 1Ω  
SL00254  
C
REMOTE  
INMAX  
2. R  
L MAX  
I
V
I
OUT  
IN  
OUT  
Figure 5. In a Non-Inverting Voltage-Follower Configuration,  
the NE5230 will Give Full Rail-to-Rail Swing. Other Low Voltage  
Amplifiers will not Because they are Limited by their Input  
Common-Mode Range and Output Swing Capability.  
4mA  
4mV  
20mA  
20mV  
a. The NE5230 as a Remote Transducer Transconductance  
Amp With 4-20mA Current Transmission Output Capability  
There are not as many considerations when designing with the  
NE5230 as with other devices. Since the NE5230 is  
+
internally-compensated and has a unity gain-bandwidth of 600kHz,  
board layout is not so stringent as for very high frequency devices  
such as the NE5205. The output capability of the NE5230 allows it  
to drive relatively high capacitive loads and small resistive loads.  
The power supply pins should be decoupled with a low-pass RC  
network as close to the supply pins as possible to eliminate 60Hz  
and other external power line noise, although the power supply  
rejection ratio (PSRR) for the part is very high. The pinout for the  
NE5230 is the same as the standard single op amp pinout with the  
exception of the bias current adjusting pin.  
R
C
V
IN  
V
CC  
3
2
+
7
+
V
CC  
6
NE5230  
5
4
V
EE  
+ I  
OUT  
R
L
REMOTE TRANSDUCER WITH CURRENT  
TRANSMISSION  
b. The Same Type of Circuit as Figure 5a, but for Sourcing  
Current to the Load  
There are many ways to transmit information along two wires, but  
current transmission is the most beneficial when the sensing of  
remote signals is the aim. It is further enhanced in the form of 4 to  
20mA information which is used in many control-type systems. This  
method of transmission provides immunity from line voltage drops,  
large load resistance variations, and voltage noise pickup. The zero  
reference of 4mA not only can show if there is a break in the line  
SL00255  
Figure 6.  
9
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
The NE5230 circuit shown in Figure 6 is a pseudo transistor  
configuration. The inverting input is equivalent to the “base,” the  
long line is used which causes high line resistance, a current  
repeater could be inserted into the line. The same configuration of  
Figure 6 can be used with exception of a resistor across the input  
and line ground to convert the current back to voltage. Again, the  
current sensing resistor will set up the transconductance and the  
part will receive power from the line.  
point where V and the non-inverting input meet is the “emitter,”  
EE  
and the connection after the output diode meets the V pin is the  
CC  
collector. The output diode is essential to keep the output from  
saturating in this configuration. From here it can be seen that the  
base and emitter form a voltage-follower and the voltage present at  
R
must equal the input voltage present at the inverting input. Also,  
C
the emitter and collector form a current-follower and the current  
flowing through R is equivalent to the current through R and the  
amplifier. This sets up the current loop. Therefore, the following  
equation can be formulated for the working current transmission line.  
The load current is:  
TEMPERATURE TRANSDUCER  
C
L
A variation on the previous circuit makes use of the supply current  
control pin. The voltage present at this pin is proportional to absolute  
temperature (PTAT) because it is produced by the amplifier bias  
current through an internal resistor divider in a PTAT cell. If the  
control pin is connected to the input pin, the NE5230 itself can be  
used as a temperature transducer. If the center tap of a resistive pot  
is connected to the control pin with one side to ground and the other  
to the inverting input, the voltage can be changed to give different  
temperature versus output current conditions (see Figure 7). For  
additional control, the output current is still proportional to the input  
voltage differential divided by the current sense resistor.  
I =V /R  
C
(2)  
L
IN  
and proportional to the input voltage for a set R . Also, the current is  
C
constant no matter what load resistance is used while within the  
operating bandwidth range of the op amp. When the NE5230’s  
supply voltage falls past a certain point, the current cannot remain  
constant. This is the “voltage compliance” and is very good for this  
application because of the near rail output voltage. The equation  
that determines the voltage compliance as well as the largest  
possible load resistor for the NE5230 is as follows:  
When using the NE5230 as a temperature transducer, the thermal  
considerations in the previous section must be kept in mind.  
R
=[V  
)-V  
- V  
]/I  
L
(3)  
L max  
remote supply  
CC min  
IN max  
Where V  
is the worst-case power supply voltage  
CC min  
V
I
CC  
5
OUT  
(approximately 1.8V) that will still keep the part operational. As an  
example, when using a 15V remote power supply, a current sensing  
resistor of 1, and an input voltage (V ) of 20mV, the output current  
3
2
+
REMOTE  
POWER  
SUPPLY  
7
+
V
6
IN  
NE5230  
(I ) is 20mA. Furthermore, a load resistance of zero to  
L
approximately 650can be inserted in the loop without any change  
in current when the bias current-control pin is tied to the negative  
supply pin. The voltage drop across the load and line resistance will  
not affect the NE5230 because it will operate down to 1.8V. With a  
15V remote supply, the voltage available at the amplifier is still  
enough to power it with the maximum 20mA output into the 650Ω  
load.  
4
V
EE  
10  
R
L
200  
R
C
What this means is that several instruments, such as a chart  
recorder, a meter, or a controller, as well as a long cable, can be  
connected in series on the loop and still obtain accurate readings if  
the total resistance does not exceed 650. Furthermore, any  
variation of resistance in this range will not change the output  
current.  
NOTES:  
1. I  
= V  
OUT  
IN/RC  
V
* 1.8V * V  
REMOTE  
INMAX  
2. R  
L MAX  
For R = 1Ω  
C
I
Any voltage output type transducer can be used, but one that does  
not need external DC voltage or current excitation to limit the  
maximum possible load resistance is preferable. Even this problem  
can be surmounted if the supply power needed by the transducer is  
compatible with the NE5230. The power goes up the line to the  
transducer and amplifier while the transducer signal is sent back via  
the current output of the NE5230 transconductance configuration.  
OUT  
I
V
OUT  
IN  
4mA  
4mV  
20mA  
20mV  
SL00256  
Figure 7. NE5230 Remote Temperature Transducer Utilizing  
4-20mA Current Transmission. This Application Shows the use  
of the Accessibility of the PTAT Cell in the Device to Make the  
Part, Itself, a Transducer  
The voltage range on the input can be changed for transducers that  
produce a large output by simply increasing the current sense  
resistor to get the corresponding 4 to 20mA output current. If a very  
10  
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
because the waveform forces the amplifier to swing the output  
HALF-WAVE RECTIFIER WITH RAIL-TO-GROUND  
beyond either ground or the positive supply rail, depending on the  
biasing, and, also, the output cannot disengage during this half  
cycle. During the other half cycle, however, the amplifier achieves a  
half-wave that can have a peak equal to the total supply voltage.  
The photographs in Figure 9 show the effect of the different biasing  
schemes, as well as the wide bandwidth (it works over the full audio  
range), that the NE5230 can achieve in this configuration.  
OUTPUT SWING  
Since the NE5230 input common-mode range includes both positive  
and negative supply rails and the output can also swing to either  
supply, achieving half-wave rectifier functions in either direction  
becomes a simple task. All that is needed are two external resistors;  
there is no need for diodes or matched resistors. Moreover, it can  
have either positive- or negative-going outputs, depending on the  
way the bias is arranged. This can be seen in Figure 8. Circuit (a) is  
biased to ground, while circuit (b) is biased to the positive supply.  
This rather unusual biasing does not cause any problems with the  
NE5230 because of the unique internal saturation detectors  
incorporated into the part to keep the PNP and NPN output  
transistors out of “hard” saturation. It is therefore relatively quick to  
recover from a saturated output condition. Furthermore, the device  
does not have parasitic current draw when the output is biased to  
either rail. This makes it possible to bias the NE5230 into  
“saturation” and obtain half-wave rectification with good recovery.  
The simplicity of biasing and the rail-to-ground half-sine wave swing  
are unique to this device. The circuit gain can be changed by the  
standard op amp gain equations for an inverting configuration.  
By adding another NE5230 in an inverting summer configuration at  
the output of the half-wave rectifier, a full-wave can be realized. The  
values for the input and feedback resistors must be chosen so that  
each peak will have equal amplitudes. A table for calculating values  
is included in Figure 10. The summing network combines the input  
signal at the half-wave and adds it to double the half-wave’s output,  
resulting in the full-wave. The output waveform can be referenced to  
the supply or ground, depending on the half-wave configuration.  
Again, no diodes are needed to achieve the rectification.  
This circuit could be used in conjunction with the remote transducer  
to convert a received AC output signal into a DC level at the  
full-wave output for meters or chart recorders that need DC levels.  
It can be seen in these configurations that the op amp cannot  
respond to one-half of the incoming waveform. It cannot respond  
10  
V
CC  
10  
2
V
IN  
7
+
6
V
OUT  
V
5
CC  
3
4
O
t
a. Rail-to-Ground Output Swing Referenced to Ground  
V
CC  
3
7
+
6
V
OUT  
10  
5
2
4
V
V
CC  
IN  
10  
V
CC  
t
b. Negative-Going Output Referenced to V  
CC  
SL00257  
Figure 8. Half-Wave Rectifier With Positive-Going Output Swings  
11  
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
500mV/Div 200µS/Div  
Biased to Ground  
500mV/Div 20µS/Div  
Biased to Ground  
500mV/Div 20µS/Div  
Biased to Positive Rail  
SL00258  
Figure 9. Performance Waveforms for the Circuits in Figure 8.  
Good Response is Shown at 1and 10kHz for Both Circuits Under Full Swing With a 2V Supply  
12  
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
500mV  
500mV  
520µs  
INPUT  
HALF-WAVE  
OUTPUT  
FULL-WAVE  
OUTPUT  
+V  
IN  
a
500mV  
b
–V  
IN  
R3  
R5  
3
+
V
CC  
7
7
R4  
6
2
A
+V  
+V  
–V  
1
+
IN  
IN  
5
a
b
R1  
a
6
2
4
+V  
A
B
2
FULL-WAVE  
5
b
3
V
4
EE  
IN  
R2  
+V  
V
B
EE  
0
2a  
NOTES:  
R2 = 2 R1  
–2V  
IN  
HALF-WAVE  
R4 = R5 = R3  
+V will vary output reference.  
B
For single supply operation V  
can be grounded on A2.  
SL00259  
EE  
Figure 10. Adding an Inverting Summer to the Input and Output of the Half-Wave will Result in Full-Wave  
CONCLUSION  
REFERENCES  
The NE5230 is a versatile op amp in its own right. The part was  
designed to give low voltage and low power operation without the  
limitations of previously available amplifiers that had a multitude of  
problems. The previous application examples are unique to this  
amplifier and save the user money by excluding various passive  
components that would have been needed if not for the NE5230’s  
special input and output stages.  
Johan H. Huijsing, Multi-stage Amplifier with Capacitive Nesting for  
Frequency Compensation, U.S. Patent Application Serial  
No. 602.234, filed April 19, 1984.  
Bob Blauschild, Differential Amplifier with Rail-to-Rail Capability,  
U.S. Patent Application Serial No. 525.181, filed August 23, 1983.  
Operational Amplifiers - Characteristics and Applications,  
Robert G. Irvine, Prentice-Hall, Inc., Englewood Cliffs, NJ 07632, 1981.  
The NE5230 has a combination of novel specifications which allows  
the designer to implement it easily into existing low-supply voltage  
designs and to enhance their performance. It also offers the  
engineer the freedom to achieve greater amplifier system design  
goals. The low input referenced noise voltage eases the restrictions  
on designs where S/N ratios are important. The wide full-power  
bandwidth and output load handling capability allow it to fit into  
portable audio applications. The truly ample open-loop gain and low  
power consumption easily lend themselves to the requirements of  
remote transducer applications. The low, untrimmed typical offset  
voltage and low offset currents help to reduce errors in signal  
processing designs. The amplifier is well isolated from changes on  
the supply lines by its typical power supply rejection ratio of 105dB.  
Transducer Interface Handbook - A Guide to Analog Signal  
Conditioning, Edited by Daniel H. Sheingold, Analog Devices, Inc.,  
Norwood, MA 02062, 1981.  
13  
1994 Aug 31  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
SO8: plastic small outline package; 8 leads; body width 3.9mm  
SOT96-1  
15  
August 31, 1994  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
DIP8: plastic dual in-line package; 8 leads (300 mil)  
SOT97-1  
16  
August 31, 1994  
0.055 (1.40)  
0.030 (0.76)  
0.055 (1.40)  
0.030 (0.76)  
NOTES:  
1. Controlling dimension: Inches. Millimeters are  
shown in parentheses.  
2. Dimension and tolerancing per ANSI Y14. 5M-1982.  
0.303 (7.70)  
3. “T”, “D”, and “E” are reference datums on the body  
and include allowance for glass overrun and meniscus  
on the seal line, and lid to base mismatch.  
– E –  
0.245 (6.22)  
4. These dimensions measured with the leads  
constrained to be perpendicular to plane T.  
5. Pin numbers start with Pin #1 and continue  
counterclockwise to Pin #8 when viewed  
from the top.  
PIN # 1  
– D –  
0.100 (2.54) BSC  
0.408 (10.36)  
0.376 (9.55)  
0.320 (8.13)  
0.070 (1.78)  
0.050 (1.27)  
0.290 (7.37)  
(NOTE 4)  
0.175 (4.45)  
0.145 (3.68)  
0.200 (5.08)  
0.165 (4.19)  
– T –  
SEATING  
PLANE  
0.035 (0.89)  
0.020 (0.51)  
0.165 (4.19)  
0.125 (3.18)  
BSC  
0.300 (7.62)  
(NOTE 4)  
0.023 (0.58)  
0.015 (0.38)  
T
E
D
0.010 (0.254)  
0.395 (10.03)  
0.015 (0.38)  
0.300 (7.62)  
0.010 (0.25)  
Philips Semiconductors  
Product specification  
Low voltage operational amplifier  
NE/SA5230  
DEFINITIONS  
Data Sheet Identification  
Product Status  
Definition  
This data sheet contains the design target or goal specifications for product development. Specifications  
may change in any manner without notice.  
Objective Specification  
Formative or in Design  
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to make changes at any time without notice in order to improve design  
and supply the best possible product.  
Preliminary Specification  
Product Specification  
Preproduction Product  
Full Production  
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes  
at any time without notice, in order to improve design and supply the best possible product.  
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,  
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,  
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes  
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting  
or modification.  
LIFE SUPPORT APPLICATIONS  
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,  
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected  
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips  
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully  
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Sunnyvale, California 94088–3409  
Philips Semiconductors and Philips Electronics North America Corporation  
register eligible circuits under the Semiconductor Chip Protection Act.  
Copyright Philips Electronics North America Corporation 1994  
All rights reserved. Printed in U.S.A.  
Telephone 800-234-7381  
18  
August 31, 1994  

相关型号:

SA5230N

Low voltage operational amplifier
NXP

SA5230N

Low Voltage Operational Amplifier
ONSEMI

SA5230NG

Low Voltage Operational Amplifier
ONSEMI

SA5232

Matched dual high-performance low-voltage operational amplifier
NXP

SA5232D

Matched dual high-performance low-voltage operational amplifier
NXP

SA5232D,112

DUAL OP-AMP, 5000uV OFFSET-MAX, PDSO8, 3.90 MM, PLASTIC, SO-8
NXP

SA5232D,118

IC DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO8, 3.90 MM, PLASTIC, SO-8, Operational Amplifier
NXP

SA5232D/01,112

IC OPAMP MATCHED DUAL LV 8-SOIC
NXP

SA5232D/01,118

IC OP AMP HP LOW VOLT 8SOIC
NXP

SA5232N

Matched dual high-performance low-voltage operational amplifier
NXP
NXP

SA5234

Matched quad high-performance low-voltage operational amplifier
NXP