SA676DK/01,118 [NXP]

SA676DKSOT266-1;
SA676DK/01,118
型号: SA676DK/01,118
厂家: NXP    NXP
描述:

SA676DKSOT266-1

光电二极管 商用集成电路
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SA676  
Low-voltage mixer FM IF system  
Rev. 3 — 19 July 2012  
Product data sheet  
1. General description  
The SA676 is a low-voltage monolithic FM IF system incorporating a mixer/oscillator, two  
limiting intermediate frequency amplifiers, quadrature detector, logarithmic Received  
Signal Strength Indicator (RSSI), voltage regulator and audio and RSSI op amps. The  
SA676 is available in a 20-pin SSOP (Shrink Small Outline Package).  
The SA676 was designed for cordless telephone applications in which efficient and  
economic integrated solutions are required and yet high performance is desirable.  
Although the product is not targeted to meet the stringent specifications of high  
performance cellular equipment, it will exceed the needs for analog cordless phones. The  
minimal amount of external components and absence of any external adjustments makes  
for a very economical solution.  
2. Features and benefits  
Low power consumption: 3.5 mA typical at 3 V  
Mixer input to > 100 MHz  
Mixer conversion power gain of 17 dB at 45 MHz  
XTAL oscillator effective to 100 MHz (LC oscillator or external oscillator can be used at  
higher frequencies)  
102 dB of IF amplifier/limiter gain  
2 MHz IF amp/limiter small signal bandwidth  
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with  
a 70 dB dynamic range  
Low external component count; suitable for crystal/ceramic/LC filters  
Audio output internal op amp  
RSSI output internal op amp  
Internal op amps with rail-to-rail outputs  
ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per  
JESD22-C101  
Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B  
3. Applications  
Cordless telephones  
 
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
4. Ordering information  
Table 1.  
Ordering information  
Tamb = 40 C to +85 C  
Type number  
Topside  
mark  
Package  
Name  
Description  
Version  
SA676DK/01  
SA676DK  
SSOP20  
plastic shrink small outline package; 20 leads;  
body width 4.4 mm  
SOT266-1  
5. Block diagram  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF amp  
limiter  
mixer  
RSSI  
OSC  
quad  
VREG  
6
audio  
E
3
B
4
1
2
5
7
8
9
10  
002aag116  
Fig 1. Block diagram  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
2 of 22  
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
6. Pinning information  
6.1 Pinning  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
RF_IN  
RF_IN_DECOUPL  
OSC_OUT  
MIXER_OUT  
IF_AMP_DECOUPL  
IF_AMP_IN  
3
4
OSC_IN  
IF_AMP_DECOUPL  
IF_AMP_OUT  
GND  
5
RSSI_OUT  
SA676DK/01  
6
V
CC  
7
AUDIO_FEEDBACK  
AUDIO_OUT  
LIMITER_IN  
8
LIMITER_DECOUPL  
LIMITER_DECOUPL  
LIMITER_OUT  
9
RSSI_FEEDBACK  
QUADRATURE_IN  
10  
002aag115  
Fig 2. Pin configuration for SSOP20  
6.2 Pin description  
Table 2.  
Pin description  
Symbol  
Pin  
1
Description  
RF_IN  
RF input  
RF_IN_DECOUPL  
OSC_OUT  
2
RF input decoupling pin  
oscillator output  
3
OSC_IN  
4
oscillator input  
RSSI_OUT  
5
RSSI output  
VCC  
6
positive supply voltage  
AUDIO_FEEDBACK  
AUDIO_OUT  
RSSI_FEEDBACK  
QUADRATURE_IN  
LIMITER_OUT  
LIMITER_DECOUPL  
LIMITER_DECOUPL  
LIMITER_IN  
7
audio amplifier negative feedback terminal  
audio amplifier output  
8
9
RSSI amplifier negative feedback terminal  
quadrature detector input terminal  
limiter amplifier output  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
limiter amplifier decoupling pin  
limiter amplifier decoupling pin  
limiter amplifier input  
GND  
ground; negative supply  
IF amplifier output  
IF_AMP_OUT  
IF_AMP_DECOUPL  
IF_AMP_IN  
IF amplifier decoupling pin  
IF amplifier input  
IF_AMP_DECOUPL  
MIXER_OUT  
IF amplifier decoupling pin  
mixer output  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
3 of 22  
 
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
7. Functional description  
The SA676 is an IF signal processing system suitable for second IF systems with input  
frequency as high as 100 MHz. The bandwidth of the IF amplifier and limiter is at least  
2 MHz with 90 dB of gain. The gain/bandwidth distribution is optimized for 455 kHz,  
1.5 ksource applications. The overall system is well-suited to battery operation as well  
as high performance and high quality products of all types.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include  
a noise figure of 7.0 dB, conversion gain of 17 dB, and input third-order intercept of  
10 dBm. The oscillator will operate in excess of 100 MHz in L/C tank configurations.  
Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations.  
The output impedance of the mixer is a 1.5 kresistor permitting direct connection to a  
455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5 k. With  
most 455 kHz ceramic filters and many crystal filters, no impedance matching network is  
necessary. The IF amplifier has 44 dB of gain and 5.5 MHz bandwidth. The IF limiter has  
58 dB of gain and 4.5 MHz bandwidth.  
To achieve optimum linearity of the log signal strength indicator, there must be a 12 dBV  
insertion loss between the first and second IF stages. If the IF filter or interstage network  
does not cause 12 dBV insertion loss, a fixed or variable resistor or an L pad for  
simultaneous loss and impedance matching can be added between the first IF output  
(IF_AMP_OUT) and the interstage network. The overall gain will then be 90 dB with  
2 MHz bandwidth.  
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.  
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is  
AC-coupled to a tuned quadrature network. This signal, which now has a 90phase  
relationship to the internal signal, drives the other port of the multiplier cell.  
The demodulated output of the quadrature drives an internal op amp. This op amp can be  
configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order  
temperature compensation if needed. It can drive an AC load as low as 10 kwith a  
rail-to-rail output.  
A log signal strength indicator completes the circuitry. The output range is greater than  
70 dB and is temperature compensated. This signal drives an internal op amp. The  
op amp is capable of rail-to-rail output. It can be used for gain, filtering, or second-order  
temperature compensation of the RSSI, if needed.  
Remark: dBV = 20log VO/VI.  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
4 of 22  
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
8. Limiting values  
Table 3.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
Parameter  
Conditions  
Min  
-
Max  
7
Unit  
V
supply voltage  
Tstg  
storage temperature  
ambient temperature  
65  
40  
+150  
+85  
C  
C  
Tamb  
operating  
9. Thermal characteristics  
Table 4.  
Symbol  
Zth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Max  
117  
Unit  
transient thermal impedance SA676DK/01 (SSOP20)  
from junction to ambient  
K/W  
10. Static characteristics  
Table 5.  
Static characteristics  
VCC = 3 V; Tamb = 25 C; unless specified otherwise.  
Symbol  
VCC  
Parameter  
Conditions  
Min  
2.7  
-
Typ  
Max  
7.0  
Unit  
V
supply voltage  
supply current  
-
ICC  
3.5  
5.0  
mA  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
5 of 22  
 
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
11. Dynamic characteristics  
Table 6.  
Dynamic characteristics  
Tamb = 25 C; VCC = 3 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.  
IF frequency = 455 kHz; R17 = 2.4 kand R18 = 3.3 k. RF level = 45 dBm; FM modulation = 1 kHz with 5 kHz peak  
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 9. The parameters listed  
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent  
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Mixer/oscillator section (external LO = 220 mV RMS value)  
fi  
input frequency  
-
-
-
-
100  
100  
7.0  
-
-
-
-
MHz  
MHz  
dB  
fosc  
NF  
IP3I  
oscillator frequency  
noise figure  
at 45 MHz  
input third-order intercept point  
50 source;  
10  
dBm  
f1 = 45.0 MHz; f2 = 45.06 MHz;  
input RF level = 52 dBm  
Gp(conv)  
conversion power gain  
matched 14.5 dBV step-up  
50 source  
10  
17  
2.5  
8
-
dB  
dB  
k  
pF  
k  
-
-
Ri(RF)  
RF input resistance  
RF input capacitance  
mixer output resistance  
single-ended input  
-
-
Ci(RF)  
-
3.0  
1.5  
4.0  
-
Ro(mix)  
IF section  
Gamp(IF)  
Glim  
MIXER_OUT pin  
1.25  
IF amplifier gain  
limiter gain  
50 source  
50 source  
30 % AM 1 kHz  
gain of two  
-
44  
-
-
-
-
-
-
-
dB  
dB  
dB  
mV  
dB  
dB  
dB  
-
58  
AM  
AM rejection  
-
50  
Vo(aud)  
SINAD  
THD  
audio output voltage  
60  
-
120  
17  
signal-to-noise-and-distortion ratio IF level 110 dBm  
total harmonic distortion  
-
55  
60  
S/N  
signal-to-noise ratio  
RSSI output voltage  
no modulation for noise  
IF; R9 = 2 k  
-
[1]  
Vo(RSSI)  
IF level = 110 dBm  
IF level = 50 dBm  
-
0.5  
1.7  
70  
0.9  
V
-
2.2  
V
RSSI(range) RSSI range  
-
-
-
-
-
-
-
dB  
k  
k  
k  
k  
mV  
Zi(IF)  
IF input impedance  
IF_AMP_IN pin  
1.3  
1.5  
0.3  
1.5  
0.3  
130  
Zo(IF)  
IF output impedance  
limiter input impedance  
limiter output impedance  
RMS output voltage  
IF_AMP_OUT pin  
LIMITER_IN pin  
LIMITER_OUT pin  
LIMITER_OUT pin  
-
Zi(lim)  
Zo(lim)  
Vo(RMS)  
1.3  
-
-
RF/IF section (internal LO)  
SINAD signal-to-noise-and-distortion ratio system; RF level = 114 dBm  
-
12  
-
dB  
[1] The generator source impedance is 50 , but the SA676 input impedance at IF_AMP_IN (pin 18) is 1500 . As a result, IF level refers  
to the actual signal that enters the SA676 input (IF_AMP_IN, pin 18), which is about 21 dB less than the ‘available power’ at the  
generator.  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
6 of 22  
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
12. Performance curves  
002aag198  
6
V
= 7.0 V  
5.0 V  
CC  
I
CC  
(mA)  
5
4
3
2
3.0 V  
2.7 V  
−55  
−35  
−15  
5
25  
45  
65  
85  
105  
125  
(°C)  
T
amb  
Fig 3. Supply current versus ambient temperature  
002aag199  
18.0  
V
= 2.7 V  
3.0 V  
7.0 V  
G
p(conv)  
(dB)  
CC  
17.5  
17.0  
16.5  
16.0  
−40  
−20  
0
20  
40  
60  
80  
90  
T
amb  
(°C)  
Fig 4. Conversion power gain versus ambient temperature  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
7 of 22  
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
002aaf414  
20  
IF output power  
(dBm)  
0
20  
40  
60  
(1)  
(2)  
80  
66  
46  
26  
6  
14  
34  
(3)  
RF input level (dBm)  
RF = 45 MHz; IF = 455 kHz.  
(1) Fund product.  
(2) Third order product.  
(3) 50 input.  
Fig 5. Mixer third order intercept and compression  
002aaf416  
5
audio  
relative level  
(dB)  
5  
15  
25  
35  
45  
55  
65  
AM rejection  
THD+N  
noise  
125  
105  
85  
65  
45  
25  
RF level (dBm)  
VCC = 3 V; RF = 45 MHz; deviation = 5 kHz; Vo(aud)RMS = 117.6 mV.  
Fig 6. Relative level of audio, AM rejection, THD+N and noise (Tamb = +25 C)  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
8 of 22  
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
002aag200  
2.1  
V
o(RSSI)  
(V)  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
T
amb  
= +85 °C  
+27 °C  
−40 °C  
−125  
−105  
−85  
−65  
−45  
RF level (dBm)  
VCC = 3 V  
Fig 7. RSSI output voltage versus RF level  
002aag201  
300  
V
CC  
= 7.0 V  
5.0 V  
V
(mV)  
o(aud)  
200  
3.0 V  
2.7 V  
100  
0
−55  
−35  
−15  
5
25  
45  
65  
85  
105  
125  
(°C)  
T
amb  
Fig 8. Audio output voltage versus ambient temperature  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
9 of 22  
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
13. Application information  
C26  
R18  
3.3 kΩ  
C15  
R17  
2.4 kΩ  
FL1  
20  
FL2  
C23  
C21  
C18 C17  
13  
19  
18  
17  
16  
15  
14  
12  
11  
IF amp  
limiter  
mixer  
RSSI  
OSC  
quad  
VREG  
audio  
1
2
3
4
5
6
7
8
9
10  
C1  
C2  
C9  
R11  
C8  
10 kΩ  
L1  
C12  
R10  
10 kΩ  
C10  
C7  
L2  
C27  
2.2 μF  
R19  
11 kΩ  
45 MHz  
input  
C5  
IFT1  
C6  
C19  
390 pF  
X1  
C14  
RSSI_OUT  
V
AUDIO_OUT  
CC  
002aag117  
The layout is very critical in the performance of the receiver. We highly recommend our demo  
board layout.  
All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher  
value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this  
capacitor will ensure consistent good sensitivity in production. A 0.1 F bypass capacitor on the  
supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.  
Fig 9. SA676 45 MHz application circuit (SA676DK demo board)  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
10 of 22  
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
Table 7.  
SA676DK demo board component list  
Component  
Description  
C1  
C2  
51 pF NPO ceramic  
220 pF NPO ceramic  
100 nF 10 % monolithic ceramic  
C5, C9, C14, C17,  
C18, C21, C23, C26  
C6  
5 pF to 30 pF trim cap  
1 nF ceramic  
C7  
C8, C15  
C10  
C12  
C19  
C27  
FL1, FL2[2]  
IFT1  
L1  
10.0 pF NPO ceramic  
10 F tantalum (minimum)[1]  
2.2 F 10 % tantalum  
390 pF 10 % monolithic ceramic  
2.2 F tantalum  
ceramic filter Murata CFUKF455KB4X-R0  
330 H Toko 303LN-1130  
330 nH Coilcraft UNI-10/142--04J08S  
0.8 H nominal Toko 292CNS-T1038Z  
44.545 MHz crystal ICM4712701  
L2  
X1  
R5[3]  
R10  
R11  
not used in application board  
8.2 k  5 % 14 W carbon composition  
10 k  5 % 14 W carbon composition  
2.4 k  5 % 14 W carbon composition  
3.3 k  5 % 14 W carbon composition  
11 k  5 % 14 W carbon composition  
R17  
R18  
R19  
[1] This value can be reduced when a battery is the power source.  
[2] This is a 30 kHz bandwidth 455 kHz ceramic filter. All the characterization and testing are done with this  
wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an  
alternative selection is Murata CFUKG455KE4A-R0.  
[3] R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.  
Recommended value is 22 k, but should not be below 10 k.  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
11 of 22  
 
 
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
RF IN  
45 MHz  
IF = 455 kHz  
SA6x6DK  
SA58640DK  
L1  
FIL1  
C6  
C1 C2  
C21  
C23  
TOKO  
C5  
455 kHz  
L2  
U1  
C7  
44.545 MHz  
X1  
C8  
R17  
R18  
C26  
R11  
455 kHz  
FIL2  
C15  
C17 C18  
C14  
R10  
R19  
C19  
RSSI  
VCC  
C27  
C10  
C9  
AUDIO  
GND  
C12  
FT1  
820 Ω  
4.7 nF  
AUDIO_DC  
001aal912  
Fig 10. SA6x6DK/SA58640DK top view with components  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
12 of 22  
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
001aal892  
Fig 11. SA6x6DK/SA58640DK bottom view (viewed from top)  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
13 of 22  
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
14. Test information  
(1)  
RF GENERATOR  
45 MHz  
(2)  
SA676 DEMOBOARD  
RSSI AUDIO  
V
(+3 V)  
CC  
DE-EMPHASIS  
FILTER  
DC VOLTMETER  
(3)  
C-MESSAGE  
HP339A DISTORTION  
SCOPE  
(4)  
ANALYZER  
002aag118  
(1) Set RF generator at 45.000 MHz; use a 1 kHz modulation frequency and a 6 kHz deviation if using  
16 kHz filters, or 8 kHz if using 30 kHz filters.  
(2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a  
measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it  
means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than  
expected.  
(3) The C-message and de-emphasis filter combination has a peak gain of 10 dB for accurate  
measurements. Without the gain, the measurements may be affected by the noise of the scope  
and HP339A analyzer. The de-emphasis filter has a fixed 6 dB/octave slope between 300 Hz and  
3 kHz.  
(4) The measured typical sensitivity for 12 dB SINAD should be 0.45 V or 114 dBm at the RF input.  
Fig 12. SA676 application circuit test setup  
SA676  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 3 — 19 July 2012  
14 of 22  
 
SA676  
NXP Semiconductors  
Low-voltage mixer FM IF system  
15. Package outline  
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
D
E
A
X
c
y
H
v
M
A
E
Z
11  
20  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
10  
detail X  
w
M
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
10o  
0o  
0.15  
0
1.4  
1.2  
0.32  
0.20  
0.20  
0.13  
6.6  
6.4  
4.5  
4.3  
6.6  
6.2  
0.75  
0.45  
0.65  
0.45  
0.48  
0.18  
mm  
1.5  
0.65  
1
0.2  
0.25  
0.13  
0.1  
Note  
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT266-1  
MO-152  
Fig 13. Package outline SOT266-1 (SSOP20)  
SA676  
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16. Soldering of SMD packages  
This text provides a very brief insight into a complex technology. A more in-depth account  
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow  
soldering description”.  
16.1 Introduction to soldering  
Soldering is one of the most common methods through which packages are attached to  
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both  
the mechanical and the electrical connection. There is no single soldering method that is  
ideal for all IC packages. Wave soldering is often preferred when through-hole and  
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not  
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high  
densities that come with increased miniaturization.  
16.2 Wave and reflow soldering  
Wave soldering is a joining technology in which the joints are made by solder coming from  
a standing wave of liquid solder. The wave soldering process is suitable for the following:  
Through-hole components  
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board  
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless  
packages which have solder lands underneath the body, cannot be wave soldered. Also,  
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,  
due to an increased probability of bridging.  
The reflow soldering process involves applying solder paste to a board, followed by  
component placement and exposure to a temperature profile. Leaded packages,  
packages with solder balls, and leadless packages are all reflow solderable.  
Key characteristics in both wave and reflow soldering are:  
Board specifications, including the board finish, solder masks and vias  
Package footprints, including solder thieves and orientation  
The moisture sensitivity level of the packages  
Package placement  
Inspection and repair  
Lead-free soldering versus SnPb soldering  
16.3 Wave soldering  
Key characteristics in wave soldering are:  
Process issues, such as application of adhesive and flux, clinching of leads, board  
transport, the solder wave parameters, and the time during which components are  
exposed to the wave  
Solder bath specifications, including temperature and impurities  
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Product data sheet  
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Low-voltage mixer FM IF system  
16.4 Reflow soldering  
Key characteristics in reflow soldering are:  
Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to  
higher minimum peak temperatures (see Figure 14) than a SnPb process, thus  
reducing the process window  
Solder paste printing issues including smearing, release, and adjusting the process  
window for a mix of large and small components on one board  
Reflow temperature profile; this profile includes preheat, reflow (in which the board is  
heated to the peak temperature) and cooling down. It is imperative that the peak  
temperature is high enough for the solder to make reliable solder joints (a solder paste  
characteristic). In addition, the peak temperature must be low enough that the  
packages and/or boards are not damaged. The peak temperature of the package  
depends on package thickness and volume and is classified in accordance with  
Table 8 and 9  
Table 8.  
SnPb eutectic process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
350  
220  
< 2.5  
235  
220  
2.5  
220  
Table 9.  
Lead-free process (from J-STD-020C)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
260  
350 to 2000  
> 2000  
260  
< 1.6  
260  
250  
245  
1.6 to 2.5  
> 2.5  
260  
245  
250  
245  
Moisture sensitivity precautions, as indicated on the packing, must be respected at all  
times.  
Studies have shown that small packages reach higher temperatures during reflow  
soldering, see Figure 14.  
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maximum peak temperature  
= MSL limit, damage level  
temperature  
minimum peak temperature  
= minimum soldering temperature  
peak  
temperature  
time  
001aac844  
MSL: Moisture Sensitivity Level  
Fig 14. Temperature profiles for large and small components  
For further information on temperature profiles, refer to Application Note AN10365  
“Surface mount reflow soldering description”.  
17. Abbreviations  
Table 10. Abbreviations  
Acronym  
AM  
Description  
Amplitude Modulation  
Charged-Device Model  
ElectroStatic Discharge  
Equivalent Series Resistance  
Frequency Modulation  
Human Body Model  
CDM  
ESD  
ESR  
FM  
HBM  
IF  
Intermediate Frequency  
inductor-capacitor filter  
Local Oscillator  
LC  
LO  
RF  
Radio Frequency  
RMS  
RSSI  
Root Mean Squared  
Received Signal Strength Indicator  
SA676  
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18. Revision history  
Table 11. Revision history  
Document ID  
SA676 v.3  
Release date  
Data sheet status  
Change notice  
Supersedes  
20120719  
Product data sheet  
-
SA676 v.2  
Modifications:  
Section 2 “Features and benefits”:  
13th bullet item re-written  
added (new) 14th bullet item  
SA676 v.2  
SA676 v.1  
20110412  
19931215  
Product data sheet  
-
SA676 v.1  
-
Product specification  
ECN  
853-1726 11659  
SA676  
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Product data sheet  
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19. Legal information  
19.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
19.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
19.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
SA676  
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Product data sheet  
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Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
19.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
20. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
SA676  
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Product data sheet  
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21. Contents  
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Functional description . . . . . . . . . . . . . . . . . . . 4  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Thermal characteristics . . . . . . . . . . . . . . . . . . 5  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6  
Performance curves . . . . . . . . . . . . . . . . . . . . . 7  
Application information. . . . . . . . . . . . . . . . . . 10  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 14  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15  
8
9
10  
11  
12  
13  
14  
15  
16  
Soldering of SMD packages . . . . . . . . . . . . . . 16  
Introduction to soldering . . . . . . . . . . . . . . . . . 16  
Wave and reflow soldering . . . . . . . . . . . . . . . 16  
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 16  
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 17  
16.1  
16.2  
16.3  
16.4  
17  
18  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19  
19  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
19.1  
19.2  
19.3  
19.4  
20  
21  
Contact information. . . . . . . . . . . . . . . . . . . . . 21  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 19 July 2012  
Document identifier: SA676  
 

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