SA8877-26D [NXP]
IC VREG 2.6 V FIXED POSITIVE LDO REGULATOR, 0.09 V DROPOUT, PDSO5, PLASTIC, MO-178, SOT-680-1, SOT-23, SO-5, Fixed Positive Single Output LDO Regulator;
| 型号： | SA8877-26D |
| 厂家： | 
NXP |
| 描述： | IC VREG 2.6 V FIXED POSITIVE LDO REGULATOR, 0.09 V DROPOUT, PDSO5, PLASTIC, MO-178, SOT-680-1, SOT-23, SO-5, Fixed Positive Single Output LDO Regulator 光电二极管 输出元件 调节器 |
| 文件： | 总12页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA8877-XX
Very low noise, low dropout,
150 mA linear regulator
Product data
2002 Jun 20
Philips
Semiconductors
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
GENERAL DESCRIPTION
The SA8877-XX family are very low-noise, low-dropout, low
quiescent-current linear regulators designed for battery-powered
applications, although they can also be used for devices powered by
AC-DC converters. The parts are available in a range of preset
output voltages from 2.5 V to 4.5 V. Typical dropout voltages are
only 165 mV at 150 mA, and 55 mV at 50 mA. Reverse battery
current is extremely low, 0.5 µA typ.
For demanding applications, output noise voltage of typically
20 µV
is achieved with a 0.01 µF capacitor on the noise bypass
rms
pin. The input voltage can vary from 2.5 V to 5.5 V , providing
DC
DC
up to150 mA output current.
An internal P-channel FET pass transistor maintains an 85 µA
typical supply current, independent of the load current and dropout
voltage. Other features include a 0.01 µA logic-controlled shutdown,
short circuit and thermal shutdown protection, and reverse battery
protection.
To accommodate high density layouts, it is packaged in the small
footprint 5-pin SO5 (SOT23-5). The SA8877 is pin compatible with
the industry standard ’2982 and a direct replacement for the
MAX8877.
FEATURES
APPLICATIONS
• Pin compatible with industry standard ’2982
• Cordless, PCS, and cellular telephones
• Low output noise: 20 µV
• PCMCIA cards and modems
rms
• Low dropout voltages: 165 mV at 150 mA; 55 mV at 50 mA
• Thermal overload and short circuit protection
• Reverse battery protection
• Handheld and portable instruments
• Palmtop computers and electronic planners
• 85 µA no-load supply current
• 100 µA typical operating supply current at I
= 150 mA
OUT
• Preset output voltage of 2.5 V, 2.6 V, 2.8 V, 3.0 V, 3.3 V, 3.6 V,
4.2 V and 4.5 V; other voltages upon request in 100 mV
increments
• Output current limit
SIMPLIFIED SYSTEM DIAGRAM
V
V
OUT
IN
INPUT
2.5 V TO 5.5 V
PRESET OUTPUT
2.5 V TO 4.5 V
150 mA
1
3
5
C
IN
1 µF
C
OUT
1 µF
SA8877-XX
SHDN
ON
BP
OFF
4
C
BP
0.01 µF
2
GND
SL01710
Figure 1. Simplified system diagram.
2
2002 Jun 20
853–2357 28506
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
ORDERING INFORMATION
PACKAGE
TEMPERATURE
RANGE
TYPE NUMBER
NAME
DESCRIPTION
plastic small outline package; 5 leads; body width 1.6 mm
VERSION
SA8877-XXD
SO5 (SOT23-5)
SOT680-1 –40 to +85 °C
NOTE:
The device has eight (8) voltage options, indicated by the XX on the
Type Number.
XX
VOLTAGE (Typical)
SA8877-25
SA8877-26
SA8877-28
SA8877-30
SA8877-33
SA8877-36
SA8877-42
SA8877-45
2.5 V
2.6 V
2.8 V
3.0 V
3.3 V
3.6 V
4.2 V
4.5 V
PIN CONFIGURATION
PIN DESCRIPTION
PIN SYMBOL
DESCRIPTION
1
V
Regulator Input. Supply voltage ranges from
2.5 V to 5.5 V. Bypass with a 1 µF capacitor to
GND.
IN
V
1
2
3
5
4
V
OUT
IN
SA8877-XX
GND
2
GND
Ground. The lead may also serve as heat
spreader by soldering it to a large PCB pad or
circuit board ground plane to maximize power
dissipation.
SHDN
BP
3
4
SHDN
BP
Active-LOW Shutdown input. A logic LOW
reduces the supply current to 10 µA. Connect
to IN for normal operation.
SL01709
Figure 2. Pin configuration.
Noise bypass pin. Low noise of typically
30 µV
with optional 0.01 µF bypass
rms
capacitor. Larger bypass capacitor further
reduces noise.
5
V
OUT
Regulator output. Sources up to 150 mA.
Minimum output capacitor is 1 µF.
MAXIMUM RATINGS
SYMBOL
PARAMETER
Input voltage
CONDITIONS
MIN.
–5.5
–5.5
–5.5
–0.3
–65
–55
–40
–
MAX.
+5.5
+5.5
+0.3
UNIT
V
V
V
V
V
DC
V
DC
V
DC
V
DC
IN
SHDN to GND voltage
SHDN to IN voltage
SHDN
SHDN
–V
IN
, V
OUT BP
OUT and BP to GND voltage
Storage temperature range
Junction temperature range
Ambient temperature range
Power dissipation
V
+ 0.3
IN
T
+150
°C
stg
T
j
+140
+85
°C
°C
T
amb
T
= 25 °C
637
mW
P
amb
D
Power dissipation derating factor above 25 °C = 5.1 mW/°C
NOTES:
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond
those indicated may adversely affect device reliability. Functional operation under absolute maximum-rated condition is not implied.
Functional operation should be restricted to the Recommended Operating Condition.
3
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
ELECTRICAL CHARACTERISTICS
V
= V
+ 0.5 V; –40 °C ≤ T
≤ +85 °C unless otherwise noted. Typical values are at T
= +25 °C. (See Note 1.)
IN
OUT(nom)
amb
amb
SYMBOL
PARAMETER
Input voltage
CONDITIONS
MIN.
2.5
TYP.
MAX.
5.5
UNIT
V
V
IN
–
–
–
I
I
= 0.1 mA; T
= +25 °C; V ≥ 2.5 V
OUT
–1.4
–3.0
1.4
%
Output voltage accuracy
OUT
amb
= 0.1 mA to 120 mA; –40 °C ≤ T
≤ +85 °C;
2.0
%
OUT
amb
V
OUT
≥ 2.5 V
I
= 0.1 mA; T
= +25 °C; V < 2.5 V
OUT
–3.0
–3.5
–
–
3.0
3.5
%
%
OUT
amb
I
= 0.1 mA to 120 mA; –40 °C ≤ T
≤ +85 °C;
OUT
amb
V
OUT
< 2.5 V
I
Maximum output current
Current limit
150
–
390
85
–
–
mA
mA
µA
OUT(max)
I
160
LIM
Q
no load
= 150 mA
–
180
–
I
Ground pin current
I
–
100
0.5
0
µA
OUT
I
Reverse batter current
Line regulation
–
–
µA
RBC
∆V
2.5 V or (V
+ 0.1 V) ≤ V ≤ 5.5 V; I = 1 mA
OUT
–0.125
0.125
0.02
–
%/V
%/mA
mV
mV
mV
lnr
ldr
OUT
IN
∆V
Load regulation
0.1 mA ≤ I ; C
OUT OUT
= 1.0 µF
–
–
–
–
–
–
–
–
0.01
1.0
55
I
I
I
= 1 mA
Dropout voltage (note 2)
OUT
OUT
OUT
= 50 mA
= 150 mA
90
–
165
28
C
C
C
C
= 10 µF
= 100 µF
= 10 µF
= 100 µF
–
µV
rms
V
Output voltage noise
f = 10 Hz to 100 kHz;
= 0.01 µF
OUT
OUT
OUT
OUT
n(o)
C
BP
20
–
µV
rms
µV
rms
µV
rms
13
–
f = 10 Hz to 100 kHz;
= 0.1 µF
C
BP
12
–
Shutdown
V
V
I
HIGH-level SHDN input
threshold
2.5 ≤ V ≤ 5.5 V
0.7V
–
–
–
–
V
IH
IN
IN
LOW–level SHDN input
threshold
2.5 ≤ V ≤ 5.5 V
0.3V
V
IL
IN
IN
T
= +25 °C
= +85 °C
= +25 °C
= +85 °C
= +25 °C
–
–
–
–
–
–
0.01
0.5
0.01
0.2
30
100
–
nA
nA
µA
µA
µs
SHDN input bias current
V = V
SHDN IN
amb
SHDN
T
amb
T
amb
1
I
Shutdown supply current
V = 0 V
OUT
Q(SHDN)
T
amb
–
T
amb
150
300
Shutdown exit delay
(note 3)
C
C
= 0.01 µF;
BP
= 1.0 µF; no load
OUT
–40 °C ≤ T
≤ +85 °C
–
µs
amb
Thermal protection
T
Thermal shutdown
junction temperature
–
–
140
15
–
–
°C
°C
SHDN
DT
Thermal shutdown
hysteresis
SHDN
NOTES:
1. Limits are 100% production tested at T
= +25 °C. Limits over the operating temperature range are guaranteed through correlation using
amb
Statistical Quality Control (SQC) methods.
2. The dropout voltage is defined as V – V
, when V
is 100 mV below the value of V
for V = V
+ 0.5 V.
OUT
IN
OUT
OUT
OUT
IN
(Only applicable for V
= +2.5 V to +4.5 V.)
OUT
3. Time needed for V
to reach 95% of final value.
OUT
4
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
TYPICAL PERFORMANCE CURVES
SA8877-33 with conditions:
V
= V
+ 0.5 V; T
= –40 °C to +85 °C unless otherwise noted. Typical values are at T
= +25 °C.
IN
OUT(nom)
amb
amb
3.32
3.30
3.28
3.26
3.24
3.22
3.20
140
135
130
125
120
115
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
OUTPUT VOLTAGE (V)
OUTPUT CURRENT (mA)
SL01711
SL01712
Figure 3. Output voltage versus output current.
Figure 4. GND pin current versus output current.
160
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
SL01713
SL01714
Figure 5. GND pin current (no load) versus input voltage.
Figure 6. Output voltage (I
= 50 mA) versus input voltage.
OUT
140
135
130
125
120
115
110
3.32
3.31
3.30
3.29
3.28
3.27
3.26
3.25
–40
–20
0
20
40
60
80
100
–40
–20
0
20
40
60
80
100
TEMPERATURE (°C)
TEMPERATURE (°C)
SL01715
SL01716
Figure 7. Output voltage (50 mA load) versus temperature.
Figure 8. GND pin current (50 mA load) versus temperature.
5
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
TYPICAL PERFORMANCE CURVES (continued)
140
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
120
100
80
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
20
40
60
80
100
120
140
160
OUTPUT CURRENT (mA)
INPUT VOLTAGE (V)
SL01717
SL01718
Figure 9. Dropout voltage versus output current.
Figure 10. Output voltage (no load) versus input voltage.
160
160
+85 °C
140
120
100
80
140
+25 °C
120
100
80
60
60
40
–40 °C
40
20
20
0
0
–20
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
INPUT VOLTAGE (V)
OUTPUT CURRENT (mA)
SL01719
SL01720
Figure 11. GND pin current (50 mA) versus input voltage.
Figure 12. Dropout voltage versus output current.
6
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
TYPICAL PERFORMANCE CURVES (continued)
10.000
100.0
10.0
1.0
1.000
C
= 10 µF
OUT
C
= 1 µF
LOAD
0.100
0.010
0.001
0.000
C
= 1 µF
OUT
STABLE REGION
0.1
C
= 10 µF
LOAD
0.0
0.1
1
10
FREQUENCY (Hz)
100
1000
0
50
100
150
LOAD CURRENT (mA)
SL01733
SL01734
Figure 14. Region of stable C
ESR versus load current.
Figure 13. Output noise spectral density versus frequency.
OUT
45
40
35
30
25
20
15
10
5
80
70
60
C
10 µF
L
50
40
30
20
10
0
C
1 µF
L
0
1
10
BF CAPACITANCE (nF)
100
0.1
1
10
100
1000
FREQUENCY (Hz)
SL01732
SL01731
Figure 15. Power supply rejection ratio versus frequency.
Figure 16. Output noise versus BP capacitance
25.5
25.4
25.4
25.3
25.3
25.2
1
10
100
1000
OUTPUT CURRENT (mA)
SL01730
Figure 17. Output noise versus output current.
7
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
TYPICAL PERFORMANCE CURVES (continued)
I
V
= 0–50 mA
C
C
= 1.0 µF
I
V
= 0–50 mA
C
C
= 1.0 µF
= 1.0 µF
OUT
L
IN
L
IN
= V
OUT
+ 0.5 V
= 1.0 µF
= V
OUT
+ 0.5 V
IN
OUT
IN
SL01721
SL01722
Figure 18. Load transient response
(with power supply source).
Figure 19. Load transient response
(with AA battery source).
C
C
= 1.0 µF
V
= NEAR DROPOUT CONDITION
= 0–50 mA
I = 50 mA
L
0.01 µF BYPASS CAPACITOR
IN
IN
= 1.0 µF
I
L
OUT
SL01723
SL01724
Figure 20. Load transient response.
Figure 21. Shutdown exit delay.
I
L
= 0 mA
0.01 µF BYPASS CAPACITOR
SL01725
Figure 22. Entering shutdown (no load).
8
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
TECHNICAL DISCUSSION
The SA8877-XX family are very low-noise, low-dropout, low
quiescent-current linear regulators designed for battery-powered
applications, although they can also be used for devices powered by
AC-DC converters.
The GND pin provides an electrical connection to ground and a path
for heat transfer away from the junction. Connect the GND pin to
ground using a large pad or ground plane to maximize heat transfer.
Noise reduction
An optional external 0.01 µF bypass capacitor at BP, in conjunction
with an internal 200 Ω resistor, creates an 80 Hz low-pass filter for
The voltage regulation components of the SA8877-XX consist of a
1.23 V reference, an error amplifier, a P-channel pass transistor, and
an internal feed-back voltage divider. The device also contains a
reverse battery protection circuit, a thermal sensor, a current limiter,
and shutdown logic.
noise reduction. The SA8877 produces 30 µV
of output voltage
= 10 µF. This is negligible in
OUT
RMS
noise with C = 0.01 µF and C
BP
most applications.
Voltage regulation
Start-up time is minimized by a power-on circuit that pre-charges the
bypass capacitor. The ‘Typical Performance Curves’ section shows
graphs of ‘Output noise versus BP capacitance’ (Figure 16), ‘Output
noise versus output current’ (Figure 17), and ‘Output noise spectral
density versus frequency’ (Figure 13).
The 1.23 V bandgap reference is connected to the error amplifier’s
inverting input. The error amplifier compares this reference with the
feedback voltage and amplifies the difference. If the feedback
voltage is lower than the reference voltage, the pass-transistor gate
is pulled lower, which allows more current to pass to the output and
increases the output voltage. If the feedback voltage is too high, the
pass-transistor gate is pulled up, allowing less current to pass to the
output. The output voltage is fed back through an internal resistor
Device protection
The SA8877 has several built-in protection circuits.
Current limiter: The current limiter controls the the pass transistor’s
gate voltage so the output current cannot exceed 390 mA. We
recommend using 160 mA minimum to 500 mA maximum in the
design parameters. Because of the current limiter, the output can be
shorted to ground for an indefinite amount of time with no damage to
the part.
voltage divider connected to the V
pin.
OUT
The SA8877 uses a 1.1 Ω typical P-channel MOSFET pass
transistor. The P-channel MOSFET requires no base drive, therefore
the device has lower quiescent current than a comparable PNP
transistor-based design. The SA8877-XX uses 100 µA of quiescent
current under any load conditions.
Reverse battery protection: The reverse battery protection circuit
prevents damage to the device if the supply battery is accidentally
An optional external bypass capacitor connected between the
BP pin and ground reduces noise at the output.
installed backwards. This circuit compares V and V
to ground
SHDN
IN
and disconnects the device’s internal circuits if it detects reversed
polarity. Reverse supply current is limited to 1 mA when this
protective circuit is active, preventing the battery from rapidly
discharging through the device.
Power dissipation
The SA8877’s maximum power dissipation depends on the thermal
resistance of the case and circuit board, the temperature difference
between the die junction and ambient air, and the rate of air flow.
Thermal overload protection: When the junction temperature
exceeds +140 °C, the thermal sensor signals the shutdown logic to
turn off the pass transistor. After the junction temperature has cooled
by 15 °C the sensor signals the shutdown logic to turn the pass
transistor on again. This will create a pulsed output during lengthy
thermal overloads.
The power dissipation across the device is P = I
The maximum power dissipation is:
(V – V
IN
).
OUT
OUT
P
MAX
= (T – T ) / (Θ + Θ
)
BA
j
amb
JB
where T – T
is the temperature difference between the SA8877
j
amb
die junction and the surrounding air, Θ (or Θ ) is the thermal
JB
JC
resistance of the package, and Θ is the thermal resistance
through the printed circuit board, copper traces, and other materials
to the surrounding air.
NOTE: Thermal overload protection is to protect the device during
fault conditions. Do not exceed the maximum junction-temperature
BA
rating of T = +150 °C during continuous operation.
j
9
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
APPLICATION INFORMATION
Capacitor selection and regulator stability
Normally, use a 1 µF capacitor on the SA8877 input and a 1 µF to
10 µF capacitor on the output. To improve the supply-noise rejection
and line-transient response, use input capacitor values and lower
ESRs. To reduce noise and improve load-transient response,
stability, and power-supply rejection, use use large output
capacitors.
PSRR and operation from sources other than
batteries
The SA8877 is designed to deliver low dropout voltages and low
quiescent currents in battery-powered systems. When operating
from sources other than batteries, improved supply-noise rejection
and transient response can be achieved by increasing the values of
the input and output bypass capacitors, and through passive filtering
techniques.
For stable operation over the full temperature range and with load
currents up to 150 mA, a 1 µF (min.) ceramic capacitor is
recommended.
Power-supply rejection is 63 dB at low frequencies and rolls off
above 10 kHz. See Figure 15, ‘Power supply rejection ratio versus
frequency’. Figures 18, 19, and 20 show the SA8877’s line- and
load-transient responses.
Note that some ceramic dielectrics exhibit large capacitance and
ESR variation with temperature. With dielectrics such as Z5U and
Y5V, it may be necessary to increase the capacitance by a factor
of 2 or more to ensure stability at temperatures below –10 °C. With
X7R or X5R dielectrics, 1 µF should be sufficient at all operating
Input-output (dropout) voltage
For output voltage greater than the minimum input voltage (2.5 V),
the regulator’s minimum input-output voltage differential (or dropout
voltage) determines the lowest usable supply voltage. In
battery-powered systems, this will determine the useful end-of-life
battery voltage. Because the SA8877 uses a P-channel MOSFET
pass transistor, the dropout voltage is a function of drain-to-source
temperatures for V
= 2.5 V.
OUT
A graph of the Region of Stable C
ESR versus Load Current is
OUT
shown in Figure 14. Use a 0.01 µF bypass capacitor at BP for low
output voltage noise. Increasing the capacitance will slightly
decrease the output noise, but increase the start-up time. Values
above 0.1 µF provide no performance advantage and are not
recommended (see Figures 21 and 22 in the ‘Typical Performance
Curves’).
on-resistance (R ) multiplied by the load current (see ‘Typical
DS(ON)
Performance Curves’).
Load-transient considerations
The SA8877 load-transient response graphs (Figures 18, 19, and
20) show two components of the output response: a DC shift from
the output impedance due to the load current change, and the
transient response. Typical transient for a step change in the load
current from 0 mA to 50 mA is 40 mV. Increasing the output
capacitor’s value and decreasing the ESR attenuates the overshoot.
PACKING METHOD
The SA8877-XX is packed in reels, as shown in Figure 23.
GUARD
BAND
TAPE
TAPE DETAIL
REEL
ASSEMBLY
COVER TAPE
CARRIER TAPE
BARCODE
LABEL
BOX
SL01305
Figure 23. Tape and reel packing method.
10
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
SO5: plastic small outline package; 5 leads; body width 1.6 mm
SOT680-1
11
2002 Jun 20
Philips Semiconductors
Product data
Very low noise, low dropout,
150 mA linear regulator
SA8877-XX
Data sheet status
Product
status
Definitions
[1]
Data sheet status
[2]
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Koninklijke Philips Electronics N.V. 2002
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 09-02
9397 750 10183
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
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SA8877-28D
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