SES900 [NXP]
DDR memory module temp sensor with integrated SPD, 3.3 V; DDR内存模块温度传感器集成社民党， 3.3 V
| 型号： | SES900 |
| 厂家： | 
NXP |
| 描述： | DDR memory module temp sensor with integrated SPD, 3.3 V |
| 文件： | 总55页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
Rev. 07 — 29 January 2010
Product data sheet
1. General description
The NXP Semiconductors SE97 measures temperature from −40 °C to +125 °C with
JEDEC Grade B ±1 °C accuracy between +75 °C and +95 °C and also provide 256 bytes
of EEPROM memory communicating via the I2C-bus/SMBus. It is typically mounted on a
Dual In-line Memory Module (DIMM) measuring the DRAM temperature in accordance
with the new JEDEC (JC-42.4) Mobile Platform Memory Module Temperature Sensor
Component specification and also replacing the Serial Presence Detect (SPD) which is
used to store memory module and vendor information.
The SE97 thermal sensor operates over the VDD range of 3.0 V to 3.6 V and the EEPROM
over the range of 3.0 V to 3.6 V write and 1.7 V to 3.6 V read.
Placing the Temp Sensor (TS) on a DIMM allows accurate monitoring of the DIMM module
temperature to better estimate the DRAM case temperature (Tcase) to prevent it from
exceeding the maximum operating temperature of 85 °C. The chip set throttles the
memory traffic based on the actual temperatures instead of the calculated worst-case
temperature or the ambient temperature using a temp sensor mounted on the
motherboard. There is up to 30 % improvement in thin and light notebooks that are using
one or two 1 GB SO-DIMM modules. The TS is required on DDR3 RDIMM and RDIMM
ECC. Future uses of the TS will include more dynamic control over thermal throttling, the
ability to use the Alarm Window to create multiple temperature zones for dynamic
throttling and to save processor time by scaling the memory refresh rate.
The TS consists of a ΔΣ Analog-to-Digital Converter (ADC) that monitors and updates its
own temperature readings 10 times per second, converts the reading to a digital data, and
latches them into the data temperature register. User-programmable registers, the
specification of upper/lower alarm and critical temperature trip points, EVENT output
control, and temperature shutdown, provide flexibility for DIMM temperature-sensing
applications.
When the temperature changes beyond the specified boundary limits, the SE97 outputs
an EVENT signal using an open-drain output that can be pulled up between 0.9 V and
3.6 V. The user has the option of setting the EVENT output signal polarity as either an
active LOW or active HIGH comparator output for thermostat operation, or as a
temperature event interrupt output for microprocessor-based systems. The EVENT output
can even be configured as a critical temperature output.
The EEPROM is designed specifically for DRAM DIMMs SPD. The lower 128 bytes
(address 00h to 7Fh) can be Permanent Write Protected (PWP) or Reversible Write
Protected (RWP) by software. This allows DRAM vendor and product information to be
stored and write protected. The upper 128 bytes (address 80h to FFh) are not write
protected and can be used for general purpose data storage.
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
The SE97 has a single die for both the temp sensor and EEPROM for higher reliability and
supports the industry-standard 2-wire I2C-bus/SMBus serial interface. The SMBus
TIMEOUT function is supported to prevent system lock-ups. Manufacturer and Device ID
registers provide the ability to confirm the identity of the device. Three address pins allow
up to eight devices to be controlled on a single bus.
2. Features
2.1 General features
JEDEC (JC-42.4) TSE 2002B3 DIMM ± 0.5 °C (typ.) between 75 °C and 95 °C
temperature sensor plus 256-byte serial EEPROM for Serial Presence Detect (SPD)
Optimized for voltage range: 3.0 V to 3.6 V, but SPD can be read down to 1.7 V
Shutdown current: 0.1 μA (typ.) and 5.0 μA (max.)
2-wire interface: I2C-bus/SMBus compatible, 0 Hz to 400 kHz
SMBus ALERT Response Address and TIMEOUT (programmable)
ESD protection exceeds 2500 V HBM per JESD22-A114, 250 V MM per
JESD22-A115, and 1000 V CDM per JESD22-C101
Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA
Available packages: TSSOP8, HVSON8, HXSON8, HWSON8 (JEDEC PSON8
VCED-3)
2.2 Temperature sensor features
11-bit ADC Temperature-to-Digital converter with 0.125 °C resolution
Operating current: 250 μA (typ.) and 400 μA (max.)
Programmable hysteresis threshold: off, 0 °C, 1.5 °C, 3 °C, 6 °C
Over/under/critical temperature EVENT output
B grade accuracy:
±0.5 °C/±1 °C (typ./max.) → +75 °C to +95 °C
±1.0 °C/±2 °C (typ./max.) → +40 °C to +125 °C
±2.0 °C/±3 °C (typ./max.) → −40 °C to +125 °C
2.3 Serial EEPROM features
Operating current:
Write → 0.6 mA (typ.) for 3.5 ms (typ.)
Read → 100 μA (typ.)
Organized as 1 block of 256 bytes [(256 × 8) bits]
100,000 write/erase cycles and 10 years of data retention
Permanent and Reversible Software Write Protect
Software Write Protection for the lower 128 bytes
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
2 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
3. Applications
DDR2 and DDR3 memory modules
Laptops, personal computers and servers
Enterprise networking
Hard disk drives and other PC peripherals
4. Ordering information
Table 1.
Ordering information
Type number
Topside Package
mark
Name
Description
Version
SE97PW
SE97
SE97
97L
TSSOP8 plastic thin shrink small outline package; 8 leads;
body width 4.4 mm
SOT530-1
SE97TK
HVSON8 plastic thermal enhanced very thin small outline package;
SOT908-1
no leads; 8 terminals; body 3 × 3 × 0.85 mm
SE97TL[1]
SE97TP[1][2][3]
HXSON8 plastic thermal enhanced extremely thin small outline package; SOT1052-1
no leads; 8 terminals; body 2 × 3 × 0.5 mm
S97
HWSON8 plastic thermal enhanced very very thin small outline package;
SOT1069-1
SOT1069-2
no leads; 8 terminals; body 2 × 3 × 0.8 mm
SE97TP/S900[1][2][3] S97
HWSON8 plastic thermal enhanced very very thin small outline package;
no leads; 8 terminals; body 2 × 3 × 0.8 mm
[1] SE97TL and SE97TP offer improved VPOR/EVENT IOL
.
[2] Industry standard 2 mm × 3 mm × 0.8 mm package to JEDEC VCED-3 PSON8 in 8 mm × 4 mm pitch tape 4 k quantity reels.
[3] SOT1069-1 is manufactured in APHK Hong Kong and SOT1069-2 is manufactured in APB Bangkok. The third line of the topside
marking will start with ‘P’ for SPHK and ‘n’ for APB.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
3 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
5. Block diagram
SE97
POR
V
V
TEMPERATURE REGISTER
DD
CRITICAL ALARM TRIP
UPPER ALARM TRIP
LOWER ALARM TRIP
CAPABILITY
BAND GAP
TEMPERATURE
SENSOR
SS
11-BIT ΔΣ ADC
EVENT
MANUFACTURING ID
DEVICE/REV ID
2
SMBus/I C-BUS
SCL
SDA
FILTER
INTERFACE
SMBus TIMEOUT/ALERT
CONFIGURATION
2-kbit EEPROM
10 V
OVERVOLTAGE
FFh
• HYSTERESIS
• SHUT DOWN TEMP SENSOR
• LOCK PROTECTION
• EVENT OUTPUT ON/OFF
• EVENT OUTPUT POLARITY
• EVENT OUTPUT STATUS
• CLEAR EVENT OUTPUT STATUS
A0
A1
A2
R
NO
30 kΩ to 800 kΩ
WRITE PROTECT
80h
7Fh
R
30 kΩ to 800 kΩ
SOFTWARE
WRITE PROTECT
POINTER REGISTER
R
00h
30 kΩ to 800 kΩ
002aab349
Fig 1. Block diagram of SE97
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
4 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
6. Pinning information
6.1 Pinning
terminal 1
index area
A0
A1
A2
1
2
3
4
8
7
6
5
V
DD
EVENT
SCL
SE97TL
1
2
3
4
8
7
6
5
A0
A1
A2
V
DD
EVENT
SCL
SE97PW
V
SS
SDA
V
SS
SDA
002aad548
002aab805
Transparent top view
Fig 2. Pin configuration for TSSOP8
Fig 3. Pin configuration for HXSON8
terminal 1
index area
terminal 1
index area
1
2
3
4
8
7
6
5
A0
A1
A2
V
DD
A0
A1
A2
1
2
3
4
8
7
6
5
V
DD
EVENT
SCL
SE97TK
EVENT
SCL
SE97TP
V
SDA
SS
V
SS
SDA
002aab803
002aad768
Transparent top view
Transparent top view
Fig 4. Pin configuration for HVSON8
Fig 5. Pin configuration for HWSON8
(SOT1069-1)
terminal 1
index area
SE97TP/S900
A0
A1
A2
1
2
3
4
8
7
6
5
V
DD
EVENT
SCL
V
SS
SDA
002aaf007
Transparent top view
Fig 6. Pin configuration for HWSON8 (SOT1069-2)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
5 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
6.2 Pin description
Table 2.
Symbol
A0
Pin description
Pin
Type
Description
1
I
I2C-bus/SMBus slave address bit 0 with internal pull-down. This
input is overvoltage tolerant to support software write protection.
A1
2
3
4
5
I
I2C-bus/SMBus slave address bit 1 with internal pull-down
I2C-bus/SMBus slave address bit 2 with internal pull-down
device ground
SMBus/I2C-bus serial data input/output (open-drain). Must have
external pull-up resistor.
A2
I
VSS
SDA
ground
I/O
SCL
6
7
8
I
SMBus/I2C-bus serial clock input/output (open-drain). Must have
external pull-up resistor.
EVENT
VDD
O
Thermal alarm output for high/low and critical temperature limit
(open-drain). Must have external pull-up resistor.
power
device power supply (3.0 V to 3.6 V); supports 1.7 V for
EEPROM read only.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
6 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7. Functional description
7.1 Serial bus interface
The SE97 communicates with a host controller by means of the 2-wire serial bus
(I2C-bus/SMBus) that consists of a serial clock (SCL) and serial data (SDA) signals. The
device supports SMBus, I2C-bus Standard-mode and Fast-mode. The I2C-bus standard
speed is defined to have bus speeds from 0 Hz to 100 kHz, I2C-bus fast speed from 0 Hz
to 400 kHz, and the SMBus is from 10 kHz to 100 kHz. The host or bus master generates
the SCL signal, and the SE97 uses the SCL signal to receive or send data on the SDA
line. Data transfer is serial, bidirectional, and is one byte at a time with the Most Significant
Bit (MSB) is transferred first. Since SCL and SDA are open-drain, pull-up resistors must
be installed on these pins.
7.2 Slave address
The SE97 uses a 4-bit fixed and 3-bit programmable (A0, A1 and A2) 7-bit slave address
that allows a total of eight devices to coexist on the same bus. The A0, A1 and A2 pins are
pulled LOW internally. The A0 pin is also overvoltage tolerant supporting 10 V software
write protect. When it is driven higher than 7.8 V, writing a special command would put the
EEPROM in reversible write protect mode (see Section 7.10.2 “Memory protection”). Each
pin is sampled at the start of each I2C-bus/SMBus access. The temperature sensor’s fixed
address is ‘0011b’. The EEPROM’s fixed address for the normal EEPROM read/write is
‘1010b’, and for EEPROM software protection command is ‘0110b’. Refer to Figure 7.
slave address
R/W
X
slave address
R/W
X
slave address
R/W
X
MSB
0
LSB
MSB
1
LSB
MSB
0
LSB
0
1
1
A2 A1 A0
0
1
0
A2 A1 A0
1
1
0
A2 A1 A0
fixed
hardware
selectable
fixed
hardware
selectable
fixed
hardware
selectable
002aab304
002aab351
002aab352
a. Temperature sensor
b. EEPROM (normal read/write)
c. EEPROM (software
protection command)
Fig 7. Slave address
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
7 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.3 EVENT output condition
The EVENT output indicates conditions such as the temperature crossing a predefined
boundary. The EVENT modes are very configurable and selected using the configuration
register (CONFIG). The interrupt mode or comparator mode is selected using CONFIG[0],
using either TCRIT/UPPER/LOWER or TCRIT only temperature bands (CONFIG[2]) as
modified by hysteresis (CONFIG[10:9]). The UPPER/LOWER (CONFIG[6]) and TCRIT
(CONFIG[7]) bands can be locked. Figure 8 shows an example of the measured
temperature versus time, with the corresponding behavior of the EVENT output in each of
these modes.
Upon device power-up, the default condition for the EVENT output is high-impedance to
prevent spurious or unwanted alarms, but can be later enabled (CONFIG[3]). EVENT
output polarity can be set to active HIGH or active LOW (CONFIG[1]). EVENT status can
be read (CONFIG[4]) and cleared (CONFIG[5]).
• Advisory note:
– NXP device: After power-up, bit 3 (1) and bit 2 or bit 0 (leave as 0 or 1) can be set
at the same time (e.g., in same byte) but once bit 3 is set (1) then changing bit 2 or
bit 0 has no effect on the device operation.
– Competitor device: Does not require that bit 3 be cleared (e.g., set back to (0))
before changing bit 2 or bit 0.
– Work-around: In order to change bit 2 or bit 0 once bit 3 (1) is set, bit 3 (0) must be
cleared in one byte and then change bit 2 or bit 0 and reset bit 3 (1) in the next
byte.
– SE97B will allow bit 2 or bit 0 to be changed even if bit 3 is set.
If the device enters Shutdown mode (CONFIG[8]) with asserted EVENT output, the output
remains asserted during shutdown.
7.3.1 EVENT pin output voltage levels and resistor sizing
The EVENT open-drain output is typically pulled up to a voltage level from 0.9 V to 3.6 V
with an external pull-up resistor, but there is no real lower limit on the pull-up voltage for
the EVENT pin since it is simply an open-drain output. It could be pulled up to 0.1 V and
would not affect the output. From the system perspective, there will be a practical limit.
That limit will be the voltage necessary for the device monitoring the interrupt pin to detect
a HIGH on its input. A possible practical limit for a CMOS input would be 0.4 V. Another
thing to consider is the value of the pull-up resistor. When a low supply voltage is applied
to the drain (through the pull-up resistor) it is important to use a higher value pull-up
resistor, to allow a larger maximum signal swing on the EVENT pin.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
8 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
temperature (°C)
T
th(crit)
− T
hys
critical
T
trip(u)
− T
hys
T
trip(u)
− T
hys
Upper Boundary Alarm
T
amb
T
trip(l)
− T
hys
Lower Boundary Alarm
T
trip(l)
− T
hys
time
EVENT in Comparator mode
EVENT in Interrupt mode
software interrupt clear
EVENT in ‘Critical Temp only’ mode
(1)
(2)
(1) (3)
(4)
(3)(5)
*
(6) (4)
(2)
002aae324
Refer to Table 3 for figure note information.
Fig 8. EVENT output condition
Table 3.
EVENT output condition
Figure
note
EVENT output boundary
conditions
EVENT output
Temperature Register Status bits
Comparator
mode
Interrupt
mode
Critical Temp
only mode
Bit 15
Above
Critical
Trip
Bit 14
Above
Alarm
Bit 13
Below
Alarm
Window
Window
(1)
(2)
(3)
(4)
(5)
(6)
Tamb ≥ Ttrip(l)
H
L
L
H
L
L
L
L
L
L
L
H
H
H
H
H
L
0
0
0
0
1
0
0
0
1
0
1
1
0
1
0
0
0
0
Tamb < Ttrip(l) − Thys
Tamb > Ttrip(u)
Tamb ≤ Ttrip(u) − Thys
Tamb ≥ Tth(crit)
Tamb < Tth(crit) − Thys
H
When Tamb ≥ Tth(crit) and Tamb < Tth(crit) − Thys the EVENT output is in Comparator mode
and bit 0 of CONFIG (EVENT output mode) is ignored.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
9 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.3.2 EVENT thresholds
7.3.2.1 Alarm window
The device provides a comparison window with an UPPER trip point and a LOWER trip
point, programmed through the Upper Boundary Alarm Trip register (02h), and Lower
Boundary Alarm Trip register (03h). The Upper Boundary Alarm Trip register holds the
upper temperature trip point, while the Lower Boundary Alarm Trip register holds the lower
temperature trip point as modified by hysteresis as programmed in the Configuration
register. When enabled, the EVENT output triggers whenever entering or exiting (crossing
above or below) the alarm window.
• Advisory note:
– NXP Device: The EVENT output can be cleared through the Clear EVENT bit
(CEVNT) or SMBus ALERT.
– Competitor Device: The EVENT output can be cleared only through the
Clear EVENT bit (CEVNT).
– Work-around: Only clear EVENT output using the Clear EVENT bit (CEVNT).
– There will be no change to NXP devices.
The Upper Boundary Alarm Trip should always be set above the Lower Boundary Alarm
Trip.
• Advisory note:
– NXP device: Requires one conversion cycle (125 ms) after setting the alarm
window before comparing the alarm limit with temperature register to ensure that
there is correct data in the temperature register before comparing with the Alarm
Window and operating EVENT output.
– Competitor devices: Compares the alarm limit with temperature register at any
time, so they get the EVENT output immediately when new UPPER or LOWER
Alarm Windows and the EVENT output are set at the same time.
– Work-around: Wait at least 125 ms before enabling EVENT output (EOCTL = 1).
– SE97B will compare alarm window and temperature register immediately.
7.3.2.2 Critical trip
The Tth(crit) temperature setting is programmed in the Critical Alarm Trip register (04h) as
modified by hysteresis as programmed in the Configuration register. When the
temperature reaches the critical temperature value in this register (and EVENT is
enabled), the EVENT output asserts and cannot be de-asserted until the temperature
drops below the critical temperature threshold. The Event cannot be cleared through the
Clear EVENT bit (CEVNT) or SMBus ALERT.
The Critical Alarm Trip should always be set above the Upper Boundary Alarm Trip.
• Advisory note:
– NXP device: Requires one conversion cycle (125 ms) after setting the Alarm
Window before comparing the alarm limit with temperature register to ensure that
there is correct data in the temperature register before comparing with the Alarm
Window and operating EVENT output.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
10 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
– Competitor devices: Compares the Alarm Window with temperature register at any
time, so they get the EVENT output immediately when new Tth(crit) and EVENT
output are set at the same time.
– Work-around: Wait at least 125 ms before enabling EVENT output (EOCTL = 1).
Intel will change Nehalem BIOS so that Tth(crit) is set for more than 125 ms before
EVENT output is enabled and Event value is checked.
1. Set Tth(crit)
.
2. Doing something else (make sure that exceeds 125 ms).
3. Enable the EVENT output (EOCTL = 1).
4. Wait 20 μs.
5. Read Event value.
– SE97B will compare alarm window and temperature register immediately.
7.3.3 EVENT operation modes
7.3.3.1 Comparator mode
In comparator mode, the EVENT output behaves like a window-comparator output that
asserts when the temperature is outside the window (e.g., above the value programmed in
the Upper Boundary Alarm Trip register or below the value programmed in the Lower
Boundary Alarm Trip register or above the Critical Alarm Trip resister if Tth(crit) only is
selected). Reads/writes on the registers do not affect the EVENT output in comparator
mode. The EVENT signal remains asserted until the temperature goes inside the alarm
window or the window thresholds are reprogrammed so that the current temperature is
within the alarm window.
The comparator mode is useful for thermostat-type applications, such as turning on a
cooling fan or triggering a system shutdown when the temperature exceeds a safe
operating range.
7.3.3.2 Interrupt mode
In interrupt mode, EVENT asserts whenever the temperature crosses an alarm window
threshold. After such an event occurs, writing a 1 to the Clear EVENT bit (CEVNT) in the
configuration register de-asserts the EVENT output until the next trigger condition occurs.
In interrupt mode, EVENT asserts when the temperature crosses the alarm upper
boundary. If the EVENT output is cleared and the temperature continues to increase until
it crosses the critical temperature threshold, EVENT asserts again. Because the
temperature is greater than the critical temperature threshold, a Clear EVENT command
does not clear the EVENT output. Once the temperature drops below the critical
temperature, EVENT de-asserts immediately.
• Advisory note:
– NXP device: If the EVENT output is not cleared before the temperature goes
above the critical temperature threshold EVENT de-asserts immediately when
temperature drops below the critical temperature.
– Competitor devices: If the EVENT output is not cleared before or when the
temperature is in the critical temperature threshold, EVENT will remain asserted
after the temperature drops below the critical temperature until a Clear EVENT
command.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
11 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
– Work-around: Always clear the EVENT output before temperature exceeds the
critical temperature.
– SE97B will keep EVENT asserted after the temperature drops below the critical
temperature until a Clear EVENT command de-asserts EVENT.
7.4 Conversion rate
The conversion time is the amount of time required for the ADC to complete a
temperature measurement for the local temperature sensor. The conversion rate is the
inverse of the conversion period which describes the number of cycles the temperature
measurement completes in one second—the faster the conversion rate, the faster the
temperature reading is updated. The SE97’s conversion rate is at least 8 Hz or 125 ms.
7.4.1 What temperature is read when conversion is in progress
The SE97 has been designed to ensure a valid temperature is always available. When a
read to the temperature register is initiated through the SMBus, the device checks to see if
the temperature conversion process (Analog-to-Digital conversion) is complete and a new
temperature is available:
• If the temperature conversion process is complete, then the new temperature value is
sent out on the SMBus.
• If the temperature conversion process in not complete, then the previous temperature
value is sent out on the SMBus.
It is possible that while SMBus Master is reading the temperature register, a new
temperature conversion completes. However, this will not affect the data (MSB or LSB)
that is being shifted out. On the next read of the temperature register, the new
temperature value will be shifted out.
7.5 Power-up default condition
After power-on, the SE97 is initialized to the following default condition:
• Starts monitoring local sensor
• EVENT register is cleared; EVENT output is pulled HIGH by external pull-ups
• EVENT hysteresis is defaulted to 0 °C
• Command pointer is defaulted to ‘00h’
• Critical Temp, Alarm Temperature Upper and Lower Boundary Trip register are
defaulted to 0 °C
• Capability register is defaulted to ‘0017h’ for the B grade
• Operational mode: comparator
• SMBus register is defaulted to ‘00h’
7.6 Device initialization
SE97 temperature sensors have programmable registers, which, upon power-up, default
to zero. The open-drain EVENT output is default to being disabled, comparator mode and
active LOW. The alarm trigger registers default to being unprotected. The configuration
registers, upper and lower alarm boundary registers and critical temperature window are
defaulted to zero and need to be programmed to the desired values. SMBus TIMEOUT
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
12 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
feature defaults to being enabled and can be programmed to disable. These registers are
required to be initialized before the device can properly function. Except for the SPD,
which does not have any programmable registers, and does not need to be initialized.
Table 4 shows the default values and the example value to be programmed to these
registers.
Table 4.
Register
01h
Registers to be initialized
Default value
Example value
Description
0000h
0209h
Configuration register
• hysteresis = 1.5 °C
• EVENT output = Interrupt mode
• EVENT output is enabled
Upper Boundary Alarm Trip register = 85 °C
Lower Boundary Alarm Trip register = −20 °C
Critical Alarm Trip register = 95 °C
SMBus register = no change
02h
03h
04h
22h
0000h
0000h
0000h
0000h
0550h
1F40h
05F0h
0000h
7.7 SMBus time-out
The SE97 supports SMBus time-out feature. If the host holds SCL LOW between 25 ms
and 35 ms, the SE97 would reset its internal state machine to the bus IDLE state to
prevent the system bus hang-up. This feature is turned on by default. The SMBus time-out
is disabled by writing a ‘1’ to bit 7 of register 22h.
Remark: When SMBus time-out is enabled, the I2C-bus minimum bus speed is limited by
the SMBus time-out specification limit of 10 kHz.
The SE97 has no SCL driver, so it cannot hold the SCL line LOW.
Remark: SMBus time-out works over the entire supply range of 1.7 V to 3.6 V unless the
shutdown bit (SHMD) is set and turns off the oscillator.
7.8 SMBus ALERT Response Address (ARA)
The SE97 supports SMBus ALERT when it is programmed for the Interrupt mode and
when the EVENT polarity bit is set to ‘0’. The EVENT pin can be ANDed with other
EVENT or interrupt signals from other slave devices to signal their intention to
communicate with the host controller. When the host detects EVENT or other interrupt
signal LOW, it issues an ARA to which a slave device would respond with its address.
When there are multiple slave devices generating an ALERT the SE97 performs bus
arbitration with the other slaves. If it wins the bus, it responds to the ARA and then clears
the EVENT pin.
Remark: Either in comparator mode or when the SE97 crosses the critical temperature,
the host must also read the EVENT status bit and provide remedy to the situation by
bringing the temperature to within the alarm window or below the critical temperature if
that bit is set. Otherwise, the EVENT pin will not get de-asserted.
Remark: In the SE97 the ARA is set to default ON. However, in the SE97B the ARA will
be set to default OFF since ARA is not anticipated to be used in DDR3 DIMM applications.
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
13 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
read
1
acknowledge
no acknowledge
STOP bit
P
START bit
Alert Response Address
device address
S
0
0
0
1
1
0
0
0
0
0
1
1
A2 A1 A0
0
1
host detects
SMBus ALERT
master sends a START bit,
ARA and a read command
Slave acknowledges and
sends its slave address.
The last bit of slave address
is hard coded '0'.
host NACK and
sends a STOP bit
002aac685
Fig 9. How SE97 responds to SMBus ALERT Response Address
7.9 SMBus/I2C-bus interface
The data registers in this device are selected by the Pointer register. At power-up, the
Pointer register is set to ‘00h’, the location for the Capability register. The Pointer register
latches the last location to which it was set. Each data register falls into one of three types
of user accessibility:
• Read only
• Write only
• Write/Read same address
A ‘write’ to this device will always include the address byte and the pointer byte. A write to
any register other than the Pointer register requires two data bytes.
Reading this device can take place either of two ways:
• If the location latched in the Pointer register is correct (most of the time it is expected
that the Pointer register will point to one of the Temperature register (as it will be the
data most frequently read), then the read can simply consist of an address byte,
followed by retrieving the two data bytes.
• If the Pointer register needs to be set, then an address byte, pointer byte,
repeat START, and another address byte will accomplish a read.
The data byte has the most significant bit first. At the end of a read, this device can accept
either Acknowledge (ACK) or No Acknowledge (NACK) from the Master (No Acknowledge
is typically used as a signal for the slave that the Master has read its last byte). It takes
this device 125 ms to measure the temperature. Refer to timing diagrams Figure 10 to
Figure 13 for how to program the device.
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
SCL
SDA
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
S
W
A
A
P
START
device address and write
ACK
register address
ACK
STOP
by device
by device
002aab308
A = ACK = Acknowledge bit. W = Write bit = 0. R = Read bit = 1.
Fig 10. SMBus/I2C-bus write to the Pointer register
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
14 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
(cont.)
(cont.)
SCL
SDA
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
S
W
8
A
A
START
by host
device address and write
ACK
by device
write register address
ACK
by device
1
2
3
4
5
6
7
9
1
2
3
4
5
6
7
8
9
SCL
SDA
D15 D14 D13 D12 D11 D10
most significant byte data
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
A
A
P
by host
ACK
least significant byte data
ACK
STOP
by device
by device by host
002aab412
A = ACK = Acknowledge bit. W = Write bit = 0. R = Read bit = 1.
Fig 11. SMBus/I2C-bus write to the Pointer register followed by a write data word
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
(cont.)
SCL
SDA
(cont.)
A
A6
A5
A4
A3
A2
A1
A0
D7
D6
D5
D4
D3
D2
D1
D0
S
W
8
A
START
by host
device address and write
ACK
by device
read register address
ACK
by device
1
2
3
4
5
6
7
9
(cont.)
(cont.)
SCL
SDA
A6
A5
A4
A3
A2
A1
A0
SR
R
A
device address and read
ACK
by device
repeated
START
by host
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
SCL
SDA
D15 D14 D13 D12 D11 D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
A
A
P
returned most significant byte data
ACK
by host
returned least significant byte data
NACK STOP
by host by host
002aac686
A = ACK = Acknowledge bit. A = NACK = No Acknowledge bit. W = Write bit = 0. R = Read bit = 1.
Fig 12. SMBus/I2C-bus write to Pointer register followed by a repeated START and an immediate data word read
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
15 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
1
2
3
4
5
6
7
8
9
(cont.)
(cont.)
SCL
SDA
A6
A5
A4
A3
A2
A1
A0
S
R
A
START
by host
device address and read
ACK
by device
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
SCL
SDA
D15 D14 D13 D12 D11 D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
A
A
P
returned most significant byte data
ACK
by host
returned least significant byte data
NACK STOP
by host
002aac687
A = ACK = Acknowledge bit. A = NACK = No Acknowledge bit. W = Write bit = 0. R = Read bit = 1.
Fig 13. SMBus/I2C-bus word read from register with a pre-set pointer
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
16 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.10 EEPROM operation
The 2-kbit EEPROM is organized as either 256 bytes of 8 bits each (byte mode), or
16 pages of 16 bytes each (page mode). Accessing the EEPROM in byte mode or page
mode is automatic; partial page write of 2 bytes, 4 bytes, or 8 bytes is also supported.
Communication with the EEPROM is via the 2-wire serial I2C-bus or SMBus. Figure 14
provides an overview of the EEPROM partitioning.
…
00h 01h
07h
FFh
no write protect
80h
7Fh
16 pages or
256 bytes
write protect
by software
8 pages or
128 bytes
0Fh
00h
1 page
or 16 bytes
002aac812
Fig 14. EEPROM partitioning
The EEPROM can be read over voltage range 1.7 V to 3.6 V, but all write operations must
be done 3.0 V to 3.6 V.
7.10.1 Write operations
7.10.1.1 Byte Write
In Byte Write mode the master creates a START condition and then broadcasts the slave
address, byte address, and data to be written. The slave acknowledges all 3 bytes by
pulling down the SDA line during the ninth clock cycle following each byte. The master
creates a STOP condition after the last ACK from the slave, which then starts the internal
write operation (see Figure 15). During internal write, the slave will ignore any read/write
request from the master.
slave address (memory)
word address
data
SDA
S
1
0
1
0
A2 A1 A0
0
A
A
DATA
A
P
START condition
R/W acknowledge
from slave
acknowledge
from slave
acknowledge
from slave
STOP condition;
write to the memory is performed
002aab246
Fig 15. Byte Write timing
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
17 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.10.1.2 Page Write
The SE97 contains 256 bytes of data, arranged in 16 pages of 16 bytes each. The page is
selected by the four Most Significant Bits (MSB) of the address byte presented to the
device after the slave address, while the four Least Significant Bits (LSB) point to the byte
within the page. By loading more than one data byte into the device, up to an entire page
can be written in one write cycle (see Figure 16). The internal byte address counter will
increment automatically after each data byte. If the master transmits more than
16 data bytes, then earlier bytes will be overwritten by later bytes in a wrap-around
fashion within the selected page. The internal write cycle is started following the STOP
condition created by the master.
slave address (memory)
word address
data to memory
DATA n
SDA
S
1
0
1
0
A2 A1 A0
0
A
A
A
START condition
R/W acknowledge
from slave
acknowledge
from slave
acknowledge
from slave
data to memory
DATA n + 15
A
P
acknowledge
from slave
STOP condition;
write to the memory is performed
002aab247
Fig 16. Page Write timing
7.10.1.3 Acknowledge polling
Acknowledge polling can be used to determine if the SE97 is busy writing or is ready to
accept commands. Polling is implemented by sending a ‘Selective Read’ command
(described in Section 7.10.3 “Read operations”) to the device. The SE97 will not
acknowledge the slave address as long as internal write is in progress.
7.10.2 Memory protection
The lower half (the first 128 bytes) of the memory can be write protected by special
EEPROM commands without an external control pin. The SE97 features three types of
memory write protection instructions, and three respective read Protection instructions.
The level of write-protection (set or clear) that has been defined using these instructions
remained defined even after power cycle.
The memory protection commands are:
• Permanent Write Protection (PWP)
• Reversible Write Protection (RWP)
• Clear Write Protection (CWP)
• Read Permanent Write Protection (RPWP)
• Read Reversible Write Protection (RRWP)
• Read Clear Write Protection (RCWP)
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
18 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 5 is the summary for normal and memory protection instructions.
EEPROM commands summary
Table 5.
Command
Fixed address
Hardware selectable
address
R/W
Bit 7[1] Bit 6
Bit 5
Bit 4
Bit 3
A2
Bit 2
A1
Bit 1
A0
Bit 0
Normal EEPROM read/write
Reversible Write Protection (RWP)
Clear Reversible Write Protection (CRWP)
Permanent Write Protection (PWP)[2]
Read RWP
1
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
R/W
0
[3]
[3]
VSS
VSS
A2
VSS
VDD
A1
VI(ov)
VI(ov)
A0
0
0
[3]
[3]
VSS
VSS
A2
VSS
VDD
A1
VI(ov)
VI(ov)
A0
1
Read CRWP
1
Read PWP
1
[1] The most significant bit, bit 7, is sent first.
[2] A0, A1, and A2 are compared against the respective external pins on the SE97.
[3] VI(ov) ranges from 7.8 V to 10 V.
This special EEPROM command consists of a unique 4-bit fixed address (0110b) and the
voltage level applied on the 3-bit hardware address. Normally, to address the memory
array, the 4-bit fixed address is ‘1010b’. To access the memory protection settings, the
4-bit fixed address is ‘0110b’. Figure 17 and Figure 18 show the write and read protection
sequence, respectively.
Up to eight memory devices can be connected on a single I2C-bus. Each one is given a
3-bit on the hardware selectable address (A2, A1, A0) inputs. The device only responds
when the 4-bit fixed and hardware selectable bits are matched. The 8th bit is the
read/write bit. This bit is set to 1 or 0 for read and write protection, respectively.
The corresponding device acknowledges during the ninth bit time when there is a match
on the 7-bit address.
The device does not acknowledge when there is no match on the 7-bit address or when
the device is already in permanent write protection mode and is programmed with any
write protection instructions (i.e., PWP, RWP, CWP).
slave address (memory)
dummy byte address
dummy data
SDA
S
0
1
1
0
A2 A1 A0
0
A
X
X
X
X
X
X
X
X
A
X
X
X
X
X
X
X
X
A
P
(1)
(1)
(1)
START condition
R/W acknowledge
from slave
acknowledge
acknowledge
from slave
from slave
STOP condition
002aab356
X = Don’t Care
(1) Refer to Table 6 regarding the exact state of the acknowledge bit.
Fig 17. Software Write Protect (write)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
19 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
slave address (memory)
dummy byte address
dummy data
SDA
S
0
1
1
0
A2 A1 A0
1
A
X
X
X
X
X
X
X
X
A
X
X
X
X
X
X
X
X
A
P
(1)
(1)
(1)
START condition
R/W acknowledge
from slave
no acknowledge
no acknowledge
from slave
from slave
STOP condition
002aac644
X = Don’t Care
(1) Refer to Table 7 regarding the exact state of the acknowledge bit.
Fig 18. Software Write Protect (read)
7.10.2.1 Permanent Write Protection (PWP)
If the software write-protection has been set with the PWP instruction, the first 128 bytes
of the memory are permanently write-protected. This write-protection cannot be cleared
by any instruction, or by power-cycling the device. Also, once the PWP instruction has
been successfully executed, the device no longer acknowledges any instruction (with 4-bit
fixed address of 0110b) to access the write-protection settings.
7.10.2.2 Reversible Write Protection (RWP) and Clear Reversible Write Protection (CRWP)
If the software write-protection has been set with the RWP instruction, it can be cleared
again with a CRWP instruction.
The two instructions, RWP and CRWP have the same format as a Byte Write instruction,
but with a different setting for the hardware address pins (as shown in Table 5). Like the
Byte Write instruction, it is followed by an address byte and a data byte, but in this case
the contents are all ‘Don’t Care’ (Figure 17). Another difference is that the voltage, VI(ov)
,
must be applied on the A0 pin, and specific logical levels must be applied on the other two
(A1 and A2), as shown in Table 5.
Table 6.
Acknowledge when writing data or defining write protection
Instructions with R/W bit = 0.
Status
Instruction
ACK
Address
ACK
Data byte
ACK
Write cycle
(Tcy(W)
)
Permanently
protected
PWP, RWP or CRWP
NACK
ACK
not significant
address
NACK
ACK
not significant
data
NACK
NACK
no
page or byte write in
lower 128 bytes
no
Protected with
RWP
RWP
CRWP
PWP
NACK
ACK
ACK
ACK
not significant
not significant
not significant
address
NACK
ACK
ACK
ACK
not significant
not significant
not significant
data
NACK
ACK
no
yes
yes
no
ACK
page or byte write in
lower 128 bytes
NACK
Not protected
PWP or RWP
CRWP
ACK
ACK
ACK
not significant
not significant
address
ACK
ACK
ACK
not significant
not significant
data
ACK
ACK
ACK
yes
no
page or byte write
yes
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
20 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.10.2.3 Read Permanent Write Protection (RPWP), Read Reversible Write Protection
(RRWP), and Read Clear Reversible Write Protection (RCRWP)
Read PWP, RWP, and CRWP allow the SE97 to be read in write protection mode. The
instruction format is the same as that of the write protection except that the 8th bit, R/W, is
set to 1. Figure 18 shows the instruction format, while Table 7 shows the responses when
the instructions are issued.
Table 7.
Acknowledge when reading the write protection
Instructions with R/W bit = 1.
Status
Instruction
ACK
Address
ACK
Data byte
ACK
Permanently
protected
RPWP, RRWP or
RCRWP
NACK
not significant
NACK
not significant
NACK
Protected with
RWP
RRWP
RCRWP
RPWP
NACK
ACK
ACK
ACK
not significant
not significant
not significant
not significant
NACK
NACK
NACK
NACK
not significant
not significant
not significant
not significant
NACK
NACK
NACK
NACK
Not protected
RPWP, RRWP or
RCRWP
7.10.3 Read operations
7.10.3.1 Current address read
In Standby mode, the SE97 internal address counter points to the data byte immediately
following the last byte accessed by a previous operation. If the ‘previous’ byte was the last
byte in memory, then the address counter will point to the first memory byte, and so on. If
the SE97 decodes a slave address with a ‘1’ in the R/W bit position (Figure 19), it will
issue an Acknowledge in the ninth clock cycle and will then transmit the data byte being
pointed at by the address counter. The master can then stop further transmission by
issuing a No Acknowledge on the ninth bit then followed by a STOP condition.
slave address (memory)
data from memory
SDA
S
1
0
1
0
A2 A1 A0
1
A
A
P
START condition
R/W acknowledge
from slave
no acknowledge
from master
STOP condition
002aab251
Fig 19. Current address read timing
7.10.3.2 Selective read
The read operation can also be started at an address different from the one stored in the
address counter. The address counter can be ‘initialized’ by performing a ‘dummy’ write
operation (Figure 20). The START condition is followed by the slave address (with the
R/W bit set to ‘0’) and the desired byte address. Instead of following-up with data, the
master then issues a second START, followed by the ‘Current Address Read’ sequence,
as described in Section 7.10.3.1.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
21 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
slave address (memory)
word address
SDA
S
1
0
1
0
A2 A1 A0
0
A
A
START condition
R/W acknowledge
from slave
acknowledge
from slave
slave address (memory)
data from memory
S
1
0
1
0
A2 A1 A0
1
A
A
P
START condition
R/W acknowledge
from slave
no acknowledge
from master
STOP condition
002aac901
Fig 20. Selective read timing
7.10.3.3 Sequential read
If the master acknowledges the first data byte transmitted by the SE97, then the device
will continue transmitting as long as each data byte is acknowledged by the master
(Figure 21). If the end of memory is reached during sequential Read, the address counter
will ‘wrap around’ to the beginning of memory, and so on. Sequential Read works with
either ‘Immediate Address Read’ or ‘Selective Read’, the only difference being the starting
byte address.
slave address (memory)
data from memory
DATA n
data from memory
SDA
S
1
0
1
0
A2 A1 A0
1
A
A
DATA n + 1
A
START condition
R/W acknowledge
from slave
acknowledge
from master
acknowledge
from master
data from memory
DATA n + X
A
P
no acknowledge
from master
STOP condition
002aab253
Fig 21. Sequential read timing
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
22 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
7.11 Hot plugging
The SE97 can be used in hot plugging applications. Internal circuitry prevents damaging
current backflow through the device when it is powered down, but with the I2C-bus,
EVENT or address pins still connected. The open-drain SDA and EVENT pins (SCL and
address pins are input only) effectively places the outputs in a high-impedance state
during power-up and power-down, which prevents driver conflict and bus contention. The
50 ns noise filter will filter out any insertion glitches from the state machine, which is very
robust and not prone to false operation.
The device needs a proper power-up sequence to reset itself, not only for the device
I2C-bus and I/O initial states, but also to load specific pre-defined data or calibration data
into its operational registers. The power-up sequence should occur correctly with a fast
ramp rate and the I2C-bus active. The SE97 might not respond immediately after
power-up, but it should not damage the part if the power-up sequence is abnormal. If the
SCL line is held LOW, the part will not exit the power-on reset mode since the part is held
in reset until SCL is released.
8. Register descriptions
8.1 Register overview
This section describes all the registers used in the SE97. The registers are used for
latching the temperature reading, storing the low and high temperature limits, configuring,
the hysteresis threshold and the ADC, as well as reporting status. The device uses the
pointer register to access these registers. Read registers, as the name implies, are used
for read only, and the write registers are for write only. Any attempt to read from a
write-only register will result in reading ‘0’s. Writing to a read-only register will have no
effect on the read even though the write command is acknowledged. The Pointer register
is an 8-bit register. All other registers are 16-bit.
Table 8.
Register summary
Address (hex)
Default state (hex) Register name
n/a
n/a
Pointer register
00h
01h
02h
03h
04h
05h
06h
07h
0017h
0000h
0000h
0000h
0000h
n/a
Capability register (B grade = 0017h)
Configuration register
Upper Boundary Alarm Trip register
Lower Boundary Alarm Trip register
Critical Alarm Trip register
Temperature register
1131h
A200h
A201h
0000h
0000h
0000h
Manufacturer ID register
Device ID/Revision register for SE97PW, SE97TK
Device ID/Revision register for SE97TP, SE97TL
reserved registers
08h to 21h
22h
SMBus register
23h to FFh
reserved registers
A write to reserved registers my cause unexpected results which may result in requiring a
reset by removing and re-applying its power.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
23 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.2 Capability register (00h, 16-bit read-only)
Table 9.
Bit
Capability register (address 00h) bit allocation
15
14
13
12
11
10
9
8
Symbol
Default
Access
Bit
RFU
0
R
7
0
R
6
0
R
0
R
4
0
R
3
0
0
0
R
R
R
5
2
1
HACC
1
0
BCAP
1
Symbol
Default
Access
RFU
VHV
0[1]
R
TRES
WRNG
0
0
1
0
1
R
R
R
R
R
R
R
[1] The SE97 A0 pin can support up to 10 V, but the final die was already taped out before the JC42.4 ballot 1435.00 register change could
be implemented. Bit 5 is changed from ‘0’ to ‘1’ on the future 1.7 V to 3.6 V SE97B.
Table 10. Capability register (address 00h) bit description
Bit
15:6
5
Symbol
RFU
Description
Reserved for future use; must be zero.
High voltage standoff for pin A0.
0 — default
VHV
1 — This part can support a voltage up to 10 V on the A0 pin to
support JC42.4 ballot 1435.00.
4:3
2
TRES
WRNG
HACC
BCAP
Temperature resolution.
10 — 0.125 °C LSB (11-bit)
Wider range.
1 — can read temperatures below 0 °C and set sign bit accordingly
Higher accuracy (set during manufacture).
1 — B grade accuracy
1
0
Basic capability.
1 — has Alarm and Critical Trips interrupt capability
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
24 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.3 Configuration register (01h, 16-bit read/write)
Table 11. Configuration register (address 01h) bit allocation
Bit
15
14
13
12
11
10
9
8
SHMD
0
Symbol
Default
Access
Bit
RFU
HEN
0
R
0
R
0
0
R
0
0
0
R/W
1
R
5
R
3
R/W
2
R/W
0
7
6
4
Symbol
Default
Access
CTLB
0
AWLB
0
CEVNT
0
ESTAT
0
EOCTL
0
CVO
0
EP
0
EMD
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Table 12. Configuration register (address 01h) bit description
Bit Symbol Description
15:11 RFU
10:9 HEN
reserved for future use; must be ‘0’.
Hysteresis Enable.
00 — disable hysteresis (default)
01 — enable hysteresis at 1.5 °C
10 — enable hysteresis at 3 °C
11 — enable hysteresis at 6 °C
When enabled, hysteresis is applied to temperature movement around trigger
points. For example, consider the behavior of the ‘Above Alarm Window’ bit
(bit 14 of the Temperature register) when the hysteresis is set to 3 °C. As the
temperature rises, bit 14 will be set to ‘1’ (temperature is above the alarm
window) when the Temperature register contains a value that is greater than the
value in the Alarm Temperature Upper Boundary register. If the temperature
decreases, bit 14 will remain set until the measured temperature is less than or
equal to the value in the Alarm Temperature Upper Boundary register minus
3 °C. (Refer to Figure 8 and Table 13).
Similarly, the ‘Below Alarm Window’ bit (bit 13 of the Temperature register) will
be set to ‘0’ (temperature is equal to or above the Alarm Window Lower
Boundary Trip register) when the value in the Temperature register is equal to or
greater than the value in the Alarm Temperature Lower Boundary register. As
the temperature decreases, bit 13 will be set to ‘1’ when the value in the
Temperature register is equal to or less than the value in the Alarm Temperature
Lower Boundary register minus 3 °C. Note that hysteresis is also applied to
EVENT pin functionality.
When either of the Critical Trip or Alarm Window lock bits is set, these bits
cannot be altered until unlocked.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
25 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 12. Configuration register (address 01h) bit description …continued
Bit
Symbol Description
8
SHMD
Shutdown Mode.
0 — enabled Temperature Sensor (default)
1 — disabled Temperature Sensor
When shut down, the thermal sensor diode and ADC are disabled to save
power, no events will be generated. When either of the Critical Trip or Alarm
Window lock bits is set, this bit cannot be set until unlocked. However, it can be
cleared at any time.
Remark: SMBus Time-out works over the entire supply range of 1.7 V to 3.6 V
unless the shutdown bit (SHMD) is set and turns off the oscillator.
• The EEPROM read works over the entire supply range of 1.7 V to 3.6 V
whether or not SHMD is set because it does not need oscillator to function.
There is no undervoltage lockout, the device no longer responds at some
voltage below 1.7 V.
• EEPROM write works over the supply range of 3.0 V to 3.6 V, but not if
SHMD is set since the oscillator is needed to write to EEPROM. There is an
undervoltage lockout around 2.7 V that disables the RRPROM write
operation.
• Thermal sensor is operational over the supply range of 3.0 V to 3.6 V, but
not if SHMD is set since the oscillator is needed. There is an undervoltage
lockout around 2.7 V that disables the temp sensor.
Thermal sensor auto turn-off feature:
It was determined during testing of the SE97TP on 5 May 2008 that the Thermal
Sensor auto turn-off feature was not compatible with the JEDEC power supply
maximum ramp rate of 70 ms to 100 ms (slowest ramp rate) and this feature was
disabled for all SE97 samples/production devices tested after 6 May (wk 0818
date code is when the devices were assembled).
If there is a slow ramp rate on the supply voltage to 3.3 V the SE97 would be EE
read only and not Thermal Sensor. This is due to a feature integrated into the
device to automatically turn off the oscillator and place the thermal sensor in
shutdown if the SE97 was being used in SO-DIMM in notebook applications at
1.8 V to reduce the power consumption on the battery. The feature counts for
30 ms (± 5 ms) after the oscillator starts working (around 1.2 V to 1.7 V) and if at
30 ms the voltage is greater than 2.4 V, the oscillator is left on and the Thermal
Sensor functions as normal. But if the voltage is less than 2.4 V at 30 ms, the
oscillator is turned off and the SE97 will think the part is in SPD only mode
defaulting to the oscillator and Thermal Sensor disabled (SHMD Shutdown
Mode bit 8 = 1). The oscillator and Thermal Sensor can be re-enabled by writing
a logic 0 to SHMD. It is important in RDIMM/server applications that the Thermal
Sensor is working as the default condition since the Thermal Sensor needs to be
compatible with the JEDEC power supply ramp rate (maximum ramp rate is
70 ms to 100 ms) so the Thermal Sensor auto turn-off feature was disabled
starting on 6 May 2008 by changing a programmable bit on the device during
final test. There is no change in performance of the SE97 with this feature turned
off and was verified during characterization. There is no way to read the SE97
registers via the I2C-bus to determine if the Thermal Sensor auto turn-off feature
is enabled or disabled. This is set in a factory only register. You need to check
the date code or do an operational test (e.g., run up to < 2.4 V, hold, then go to
3.3 V, then read SHMD bit 8 in the Configuration register to see if it is set to
logic 0 (e.g., oscillator running = feature disabled) or logic 1 (e.g., oscillator
turned off = feature enabled)). The Thermal Sensor auto turn-off feature is active
in all package options prior to wk 0818. The SE97TP and SE97TL were not yet
released to production so there is a clear line at release/orderable devices
versus samples with this feature disabled in all production devices.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
26 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 12. Configuration register (address 01h) bit description …continued
Bit
Symbol Description
7
CTLB
Critical Trip Lock bit.
0 — Critical Alarm Trip register is not locked and can be altered (default)
1 — Critical Alarm Trip register settings cannot be altered
This bit is initially cleared. When set, this bit will return a ‘1’, and remains locked
until cleared by internal Power-on reset. This bit can be written with a single
write and do not require double writes.
6
AWLB
Alarm Window Lock bit.
0 — Upper and Lower Alarm Trip registers are not locked and can be altered
(default)
1 — Upper and Lower Alarm Trip registers setting cannot be altered
This bit is initially cleared. When set, this bit will return a ‘1’ and remains locked
until cleared by internal power-on reset. This bit can be written with a single write
and does not require double writes.
5
4
CEVNT Clear EVENT (write only).
0 — no effect (default)
1 — clears active EVENT in Interrupt mode. Writing to this register has no
effect in Comparator mode.
When read, this register always returns zero.
EVENT Status (read only).
ESTAT
0 — EVENT output condition is not being asserted by this device (default)
1 — EVENT output pin is being asserted by this device due to Alarm Window
or Critical Trip condition
The actual event causing the EVENT can be determined from the Read
Temperature register. Interrupt Events can be cleared by writing to the ‘Clear
EVENT’ bit (CEVNT). Writing to this bit will have no effect.
3
2
EOCTL EVENT Output Control.
0 — EVENT output disabled (default)
1 — EVENT output enabled
When either of the Critical Trip or Alarm Window lock bits is set, this bit cannot
be altered until unlocked.
CVO
Critical Event Only.
0 — EVENT output on Alarm or Critical temperature event (default)
1 — EVENT only if temperature is above the value in the critical temperature
register
When the Critical Trip or Alarm Window lock bit is set, this bit cannot be altered
until unlocked.
• Advisory note:
–
–
–
JEDEC specification requires only the Alarm Window lock bit to be set.
Work-around: Clear both Critical Trip and Alarm Window lock bits.
Future 1.7 V to 3.6 V SE97B will require only the Alarm Window lock bit
to be set.
1
EP
EVENT Polarity.
0 — active LOW (default)
1 — active HIGH. When either of the Critical Trip or Alarm Window lock bits is
set, this bit cannot be altered until unlocked.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
27 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 12. Configuration register (address 01h) bit description …continued
Bit
Symbol Description
EMD EVENT Mode.
0
0 — comparator output mode (default)
1 — interrupt mode
When either of the Critical Trip or Alarm Window lock bits is set, this bit cannot
be altered until unlocked.
Table 13. Hysteresis enable
Action Below Alarm Window bit (bit 13)
Above Alarm Window bit (bit 14)
Above Critical Trip bit (bit 15)
Temperature
slope
Threshold
temperature
Temperature
slope
Threshold
temperature
Temperature
slope
Threshold
temperature
sets
falling
rising
Ttrip(l) − Thys
rising
falling
Ttrip(u)
rising
falling
Tth(crit)
clears
Ttrip(l)
Ttrip(u) − Thys
Tth(crit) − Thys
current temperature
temperature
critical alarm
threshold
hysteresis
upper alarm
threshold
hysteresis
lower alarm
threshold
hysteresis
time
Above Critical Trip
(register 05h;
clear
set
set
clear
bit 15 = ACT bit)
Above Alarm Window
(register 05h;
clear
clear
bit 14 = AAW bit)
Below Alarm Window
(register 05h;
set
clear
bit 13 = BAW bit)
002aac799
Fig 22. Hysteresis: how it works
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
28 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.4 Temperature format
The temperature data from the temperature read back register is an 11-bit 2’s complement
word with the least significant bit (LSB) equal to 0.125 °C (resolution).
• A value of 019Ch will represent 25.75 °C
• A value of 07C0h will represent 124 °C
• A value of 1E64h will represent −25.75 °C.
The unused LSB (bit 0) is set to ‘0’. Bit 11 will have a resolution of 128 °C.
The upper 3 bits of the temperature register indicate Trip Status based on the current
temperature, and are not affected by the status of the EVENT output.
Table 14 lists the examples of the content of the temperature data register for positive and
negative temperature for two scenarios of status bits: status bits = 000b and
status bits = 111b.
Table 14. Degree Celsius and Temperature Data register
Temperature
Content of Temperature Data register
Status bits = 000b
Status bits = 111b
Binary
Binary
Hex
Hex
+125 °C
+25 °C
+1 °C
07D0h
0190h
0010h
0004h
0002h
0000h
1FFEh
1FFCh
1FF0h
1F40h
1E70h
1C90h
E7D0h
E190h
E010h
E004h
E002h
E000h
FFFEh
FFFCh
FFF0h
FF40h
FE70h
FC90h
000
000
000
000
000
000
000
000
000
000
000
000
0
0
0
0
0
0
1
1
1
1
1
1
01111101 000
00011001 000
00000001 000
00000000 010
00000000 001
00000000 000
11111111 111
11111111 110
11111111 000
11110100 000
11100111 000
11001001 000
0
0
0
0
0
0
0
0
0
0
0
0
111
111
111
111
111
111
111
111
111
111
111
111
0
0
0
0
0
0
1
1
1
1
1
1
01111101 000
00011001 000
00000001 000
00000000 010
00000000 001
00000000 000
11111111 111
11111111 110
11111111 000
11110100 000
11100111 000
11001001 000
0
0
0
0
0
0
0
0
0
0
0
0
+0.25 °C
+0.125 °C
0 °C
−0.125 °C
−0.25 °C
−1 °C
−20 °C
−25 °C
−55 °C
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
29 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.5 Temperature Trip Point registers
8.5.1 Upper Boundary Alarm Trip register (16-bit read/write)
The value is the upper threshold temperature value for Alarm mode. The data format is
2’s complement with bit 2 = 0.25 °C. ‘RFU’ bits will always report zero. Interrupts will
respond to the presently programmed boundary values. If boundary values are being
altered in-system, it is advised to turn off interrupts until a known state can be obtained to
avoid superfluous interrupt activity.
Table 15. Upper Boundary Alarm Trip register bit allocation
Bit
15
14
RFU
0
13
12
SIGN
0
11
10
9
8
Symbol
Default
Access
Bit
UBT
0
R
7
0
R
5
0
R/W
3
0
R/W
2
0
R/W
1
0
R/W
0
R
R/W
4
6
Symbol
Default
Access
UBT
RFU
0
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R
R
Table 16. Upper Boundary Alarm Trip register bit description
Bit
Symbol
RFU
Description
15:13
12
reserved; always ‘0’
Sign (MSB)
SIGN
UBT
11:2
1:0
Upper Boundary Alarm Trip Temperature (LSB = 0.25 °C)
RFU
reserved; always ‘0’
SE97_7
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Product data sheet
Rev. 07 — 29 January 2010
30 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.5.2 Lower Boundary Alarm Trip register (16-bit read/write)
The value is the lower threshold temperature value for Alarm mode. The data format is
2’s complement with bit 2 = 0.25 °C. RFU bits will always report zero. Interrupts will
respond to the presently programmed boundary values. If boundary values are being
altered in-system, it is advised to turn off interrupts until a known state can be obtained to
avoid superfluous interrupt activity.
Table 17. Lower Boundary Alarm Trip register bit allocation
Bit
15
14
RFU
0
13
12
SIGN
0
11
10
9
8
Symbol
Default
Access
Bit
LBT
0
R
7
0
R
5
0
R/W
3
0
R/W
2
0
R/W
1
0
R/W
0
R
R/W
4
6
Symbol
Default
Access
LBT
RFU
0
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R
R
Table 18. Lower Boundary Alarm Trip register bit description
Bit
Symbol
RFU
Description
15:13
12
reserved; always ‘0’
Sign (MSB)
SIGN
LBT
11:2
1:0
Lower Boundary Alarm Trip Temperature (LSB = 0.25 °C)
RFU
reserved; always ‘0’
8.5.3 Critical Alarm Trip register (16-bit read/write)
The value is the critical temperature. The data format is 2’s complement with
bit 2 = 0.25 °C. RFU bits will always report zero.
Table 19. Lower Boundary Alarm Trip register bit allocation
Bit
15
14
RFU
0
13
12
SIGN
0
11
10
9
8
Symbol
Default
Access
Bit
CT
0
R
7
0
R
5
0
R/W
3
0
R/W
2
0
R/W
1
0
R/W
0
R
R/W
4
6
Symbol
Default
Access
CT
RFU
0
0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R
R
Table 20. Critical Alarm Trip register bit description
Bit
Symbol
RFU
Description
15:13
12
reserved; always ‘0’
Sign (MSB)
SIGN
CT
11:2
1:0
Critical Alarm Trip Temperature (LSB = 0.25 °C)
RFU
reserved; always ‘0’
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
31 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.6 Temperature register (16-bit read-only)
Table 21. Temperature register bit allocation
Bit
15
ACT
0
14
AAW
0
13
BAW
0
12
11
10
9
8
Symbol
Default
Access
Bit
SIGN
TEMP
0
0
R
3
0
R
2
0
R
1
0
R
R
R
R
R
7
6
5
4
TEMP
0
0
Symbol
Default
Access
RFU
0
0
0
0
0
0
0
R
R
R
R
R
R
R
R
Table 22. Temperature register bit description
Bit
Symbol Description
15
ACT
Above Critical Trip.
Increasing Tamb
:
0 — Tamb < Tth(crit)
1 — Tamb ≥ Tth(crit)
Decreasing Tamb
:
0 — Tamb < Tth(crit) − Thys
1 — Tamb ≥ Tth(crit) − Thys
Above Alarm Window.
14
13
12
AAW
BAW
SIGN
Increasing Tamb
:
0 — Tamb ≤ Ttrip(u)
1 — Tamb > Ttrip(u)
Decreasing Tamb
:
0 — Tamb ≤ Ttrip(u) − Thys
1 — Tamb > Ttrip(u) − Thys
Below Alarm Window.
Increasing Tamb
:
0 — Tamb ≥ Ttrip(l)
1 — Tamb < Ttrip(l)
Decreasing Tamb
:
0 — Tamb ≥ Ttrip(l) − Thys
1 — Tamb < Ttrip(l) − Thys
Sign bit.
0 — positive temperature value
1 — negative temperature value
11:1 TEMP
RFU
Temperature Value (2’s complement). (LSB = 0.125 °C)
0
reserved; always ‘0’
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
32 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.7 Manufacturer’s ID register (16-bit read-only)
The SE97 Manufacturer’s ID register is intended to match NXP Semiconductors PCI SIG
(1131h).
Table 23. Manufacturer’s ID register bit allocation
Bit
15
14
13
12
11
10
9
8
Symbol
Default
Access
Bit
Manufacturer ID
0
R
7
0
R
6
0
R
5
1
R
4
0
R
3
0
R
2
0
R
1
1
R
0
Symbol
Default
Access
(continued)
0
0
1
1
0
0
0
1
R
R
R
R
R
R
R
R
8.8 Device ID register
The SE97 device ID is A2h. The device revision varies by device.
Table 24. Device ID register bit allocation
Bit
15
14
13
12
11
10
9
8
Symbol
Default
Access
Bit
Device ID
1
R
7
0
R
6
1
R
5
0
R
4
0
R
3
0
R
2
1
R
1
0
R
0
Symbol
Default
Access
Device revision
[1]
[1]
0
0
0
0
0
0
R
R
R
R
R
R
R
R
[1] 00 for SE97PW, SE97TK (original) is 00h.
01 for SE97TL, SE97TP (improved VPOR and EVENT IOL) is 01h.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
33 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
8.9 SMBus register
Table 25. SMBus Time-out register bit allocation
Bit
15
14
13
12
11
10
9
8
Symbol
Default
Access
Bit
RFU
0
0
R
6
0
R
5
0
R
4
0
R
3
0
R
2
0
R
1
0
R
R
0
7
STMOUT
0
Symbol
Default
Access
RFU
SALRT
0
0
0
0
0
0
0
R/W
R
R
R
R
R
R
R/W
Table 26. SMBus Time-out register bit description
Bit
15:8
7
Symbol
RFU
Description
reserved; always ‘0’
SMBus time-out.
STMOUT
0 — SMBus time-out is enabled (default)
1 — disable SMBus time-out
When either of the Critical Trip or Alarm Window lock bits is set, this bit
cannot be altered until unlocked.
6:1
0
RFU
reserved; always ‘0’
SALRT
SMBus ALERT Response Address (ARA).
0 — SMBus ARA is enabled (default)
1 — disable SMBus ARA
When either of the Critical Trip or Alarm Window lock bits is set, this bit
cannot be altered until unlocked.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
34 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
9. Application design-in information
In a typical application, the SE97 behaves as a slave device and interfaces to a bus
master (or host) via the SCL and SDA lines. The EVENT output is monitored by the host,
and asserts when the temperature reading exceeds the programmed values in the alarm
registers. The A0, A1 and A2 pins are directly connected to VDD or VSS without any pull-up
resistors. The SDA and SCL serial interface pins are open-drain I/Os that require pull-up
resistors, and are able to sink a maximum of 3 mA with a voltage drop less than 0.4 V.
Typical pull-up values for SCL and SDA are 10 kΩ, but the resistor values can be changed
in order to meet the rise time requirement if the capacitance load is too large due to
routing, connectors, or multiple components sharing the same bus.
3.3 V
slave
master
10 kΩ
(3×)
V
DD
SCL
SDA
HOST
CONTROLLER
SE97
EVENT
A0
A1
A2
V
SS
002aab354
Fig 23. Typical application showing SE97 interfacing with 3.3 V host
mother board
3.3 V
1.1 V
0.1 μF
0.1 μF
0.1 μF
10 kΩ
10 kΩ
10 kΩ
10 kΩ
V
CC(B)
V
CC(A)
V
DD
SCL
SCL
B2
B1
A2
A1
PCA9509
HOST
CONTROLLER
SDA
SDA
SE97
EVENT
EVENT
A0
A1
A2
EN
V
SS
002aad262
Fig 24. SE97 interfacing with 1.1 V host controller
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
35 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
9.1 SE97 in memory module application
Figure 25 shows the SE97 being placed in the memory module application. The SE97 is
centered in the memory module to monitor the temperature of the DRAM and also to
provide a 2-kbit EEPROM as the Serial Presence Detect (SPD). In the event of
overheating, the SE97 triggers the EVENT output and the memory controller throttles the
memory bus to slow the DRAM. The memory controller can also read the SE97 and watch
the DRAM thermal behavior, taking preventive measures when necessary.
DIMM
DRAM
DRAM
DRAM
DRAM
SE97
SMBus
EVENT
MEMORY CONTROLLER
CPU
002aac800
Fig 25. System application
9.2 Layout consideration
The SE97 does not require any additional components other than the host controller to
read its temperature. It is recommended that a 0.1 μF bypass capacitor between the VDD
and VSS pins is located as close as possible to the power and ground pins for noise
protection.
9.3 Thermal considerations
In general, self-heating is the result of power consumption and not a concern, especially
with the SE97, which consumes very low power. In the event the SDA and EVENT pins
are heavily loaded with small pull-up resistor values, self-heating affects temperature
accuracy by approximately 0.5 °C.
Equation 1 is the formula to calculate the effect of self-heating:
ΔT = Rth(j-a)
×
(1)
[(VDD × IDD(AV)) + (VOL(SDA) × IOL(sink)(SDA)) + (VOL(EVENT) × IOL(sink)EVENT)]
where:
ΔT = Tj − Tamb
Tj = junction temperature
T
amb = ambient temperature
th(j-a) = package thermal resistance
DD = supply voltage
DD(AV) = average supply current
R
V
I
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
36 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
VOL(SDA) = LOW-level output voltage on pin SDA
OL(EVENT) = LOW-level output voltage on pin EVENT
IOL(sink)(SDA) = SDA output current LOW
OL(sink)EVENT = EVENT output current LOW
V
I
Calculation example:
Tamb (typical temperature inside the notebook) = 50 °C
I
DD(AV) = 400 μA
DD = 3.6 V
Maximum VOL(SDA) = 0.4 V
OL(sink)(SDA) = 1 mA
OL(EVENT) = 0.4 V
OL(sink)EVENT = 3 mA
V
I
V
I
R
R
th(j-a) of HVSON8 = 56 °C/W
th(j-a) of TSSOP8 = 160 °C/W
Self heating due to power dissipation for HVSON8 is:
ΔT = 56 × [(3.6 × 0.4) + (0.4 × 3) + (0.4 × 1)]= 56 °C ⁄ W × 3.04 mW = 0.17 °C
Self heating due to power dissipation for TSSOP8 is:
(2)
(3)
ΔT = 160 × [(3.6 × 0.4) + (0.4 × 3) + (0.4 × 1)] = 160 °C ⁄ W × 3.04 mV = 0.49 °C
10. Limiting values
Table 27. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−0.3
−0.3
−0.3
−1
Max
+4.2
+4.2
+12.5
Unit
VDD
Vn
supply voltage
V
V
V
voltage on any other pin
voltage on pin A0
SDA, SCL, EVENT pins
overvoltage input; A0 pin
at SDA, SCL, EVENT pins
VA0
Isink
Tj(max)
Tstg
sink current
+50.0 mA
maximum junction temperature
storage temperature
-
150
°C
°C
−65
+165
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
37 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
11. Characteristics
Table 28. SE97 thermal sensor characteristics
VDD = 3.0 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tlim(acc)
temperature limit accuracy
B grade; VDD = 3.3 V ± 10 %
Tamb = 75 °C to 95 °C
Tamb = 40 °C to 125 °C
Tamb = −40 °C to +125 °C
−1.0
−2.0
−3.0
-
< ±0.5
< ±1.0
< ±2
+1.0
+2.0
+3.0
-
°C
°C
°C
°C
ms
Tres
temperature resolution
conversion period
0.125
100
Tconv
conversion time from STOP bit
to conversion complete
-
120
Ef(conv)
conversion rate error
percentage error in
programmed data
−30
-
+30
%
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
38 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 29. DC characteristics
VDD = 1.7 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design.
Symbol
IDD(AV)
Parameter
Conditions
Min
Typ Max
Unit
μA
average supply current
SMBus inactive
SMBus inactive
-
-
250 400
Isd(VDD)
supply voltage shutdown mode
current
0.1
5.0
μA
VIH
VIL
HIGH-level input voltage
SCL, SDA;
VDD = 3.0 V to 3.6 V
0.7 × VDD
-
-
VDD + 1
0.3 × VDD
V
V
LOW-level input voltage
SCL, SDA;
-
VDD = 3.0 V to 3.6 V
VOL1
VOL2
VI(ov)
VPOR
LOW-level output voltage 1
LOW-level output voltage 2
overvoltage input voltage
power-on reset voltage
VDD = 3.0 V; IOL = 3 mA
VDD = 1.7 V; IOL = 1.5 mA
pin A0; VI(ov) − VDD > 4.8 V
power supply rising
power supply falling
SE97PW, SE97TK
SE97TL, SE97TP
VOL1 = 0.4 V
-
-
-
-
-
0.4
0.5
10
V
V
V
V
-
[1]
7.8
-
1.7
0.1
0.6
-
-
-
-
V
V
IOL(sink)EVENT LOW-level output sink current on
pin EVENT
SE97PW, SE97TK
SE97TL, SE97TP
VOL2 = 0.5 V
2
6
3
-
-
-
-
-
-
mA
mA
mA
IOL(sink)(SDA) LOW-level output sink current on
pin SDA
ILOH
ILIH
ILIL
HIGH-level output leakage current
HIGH-level input leakage current
LOW-level input leakage current
EVENT; VOH = VDD
SDA, SCL; VI = VDD
SDA, SCL; VI = VSS
A0, A1, A2; VI = VSS
−1.0
−1.0
−1.0
−1.0
-
-
+1.0
+1.0
+1.0
+1.0
10
μA
μA
μA
μA
pF
μA
μA
-
-
-
Ci(SCL/SDA)
SCL and SDA input capacitance
leakage current
5
1
-
IL
on A0, A1, A2
-
-
Ipd
pull-down current
internal; A0, A1, A2 pins;
VI = 0.3VDD to VDD
-
4.0
ZIL
LOW-level input impedance
HIGH-level input impedance
pins A0, A1, A2; VI < 0.3VDD
pins A0, A1, A2
30
-
-
-
-
kΩ
kΩ
ZIH
800
[1] High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.),
but since the SE97 EEPROM write works only down to 3.0 V, the condition of VI(ov) > 4.8 V + VDD or > 4.8 V + 3.0 V was applied and the
minimum voltage changed to 7.8 V. If VDD is 3.6 V then the minimum voltage is 8.4 V.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
39 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
002aac910
002aac911
500
5
I
DD(AV)
(μA)
400
I
sd(VDD)
(μA)
3
V
= 3.6 V
3.0 V
DD
300
200
100
0
V
DD
= 3.6 V
3.0 V
1
−1
−40
0
40
80
120
(°C)
−40
0
40
80
120
(°C)
T
amb
T
amb
I2C-bus and EEPROM inactive.
I2C-bus, temp sensor and EEPROM inactive.
Fig 26. Average supply current
Fig 27. Shutdown supply current
002aac912
002aad769
600
3.5
T
lim(acc)
(°C)
I
DD(AV)
(μA)
2.0
500
400
300
200
1.0
V
= 3.6 V
3.0 V
DD
0
−1.0
−2.0
−3.5
−40
0
40
80
120
(°C)
−50
−25
0
25
50
75
100
amb
125
(°C)
T
amb
T
Temp sensor and EEPROM active.
VDD = 3.0 V to 3.6 V.
Fig 28. Average supply current during EEPROM write
Fig 29. Typical temperature accuracy
002aad258
002aad767
8.0
30
I
I
OL
OL(sink)EVENT
(mA)
6.0
(mA)
V
V
= 3.0 V to 3.6 V
DD
20
4.0
2.0
0
10
= 1.7 V
DD
V
DD
= 3.7 V
3.3 V
2.9 V
1.7 V
0
−50
−50
−25
0
25
50
75
100
amb
125
(°C)
−25
0
25
50
75
100
amb
125
(°C)
T
T
VOL1 = 0.4 V.
VOL1 = 0.4 V.
Fig 30. EVENT output current SE97PW, SE97TK
Fig 31. EVENT output current SE97TL, SE97TP
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
40 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
002aac907
002aac908
25
15
I
conversion rate
(conv/s)
13
OL(sink)(SDA)
(mA)
20
V
DD
= 3.6 V
3.0 V
15
10
5
11
9
7
0
5
−40
0
40
80
80
80
120
(°C)
−40
0
40
80
80
80
120
(°C)
amb
T
T
T
T
T
T
amb
VOL2 = 0.6 V.
VDD = 3.0 V to 3.6 V.
Fig 32. SDA output current
Fig 33. Conversion rate
002aac909
002aac902
140
5
T
(ms)
conv
T
(ms)
cy(W)
120
4
3
2
100
80
60
−40
0
40
120
(°C)
−40
0
40
120
(°C)
amb
amb
VDD = 3.0 V to 3.6 V.
VDD = 3.0 V to 3.6 V.
Fig 34. Conversion period
Fig 35. EEPROM write cycle time
002aac903
002aac904
3.0
1.6
V
th
V
th
(V)
(V)
2.8
1.4
2.6
2.4
2.2
2.0
1.2
1.0
−40
0
40
120
(°C)
−40
0
40
120
(°C)
amb
amb
For temp sensor conversion.
VDD = 3.0 V to 3.6 V.
For EEPROM read operation.
VDD = 1.7 V to 3.6 V.
Fig 36. Average power-on threshold voltage
Fig 37. Average power-on threshold voltage
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
41 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
002aac905
002aac914
120
5
thermal
response
(%)
temp error
(°C)
80
(1)
(2)
3
1
40
0
−1
2
3
4
5
6
7
8
0
1
2
3
4
5
10
10
10
10
10
10
10
time (s)
noise frequency (Hz)
VDD = 3.0 V to 3.6 V.
From 25 °C (air) to 120 °C (oil bath).
(1) TSSOP8
VDD = 3.3 V + 150 mV (p-p); 0.1 μF AC coupling
capacitor; no decoupling capacitor; Tamb = 25 °C.
(2) HVSON8, HWSON8, HXSON8
Fig 38. Package thermal response
Fig 39. Temperature error versus power supply noise
frequency
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
42 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 30. SMBus AC characteristics
VDD = 1.7 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design.
The AC specifications fully meet or exceed SMBus 2.0 specifications, but allow the bus to interface with the I2C-bus from DC
to 400 kHz.
Symbol Parameter
Conditions
Standard mode
Fast mode
Unit
Min
10[1]
4000
4700
25
Max
100
-
Min
10[1]
600
1300
25
Max
fSCL
SCL clock frequency
400 kHz
tHIGH
tLOW
HIGH period of the SCL clock 70 % to 70 %
LOW period of the SCL clock 30 % to 30 %
-
-
ns
ns
ms
-
tto(SMBus) SMBus time-out time
LOW period to reset
SMBus
35
35
tr
tf
rise time of both SDA and
SCL signals
-
-
1000
300
20
-
300 ns
300 ns
fall time of both SDA and SCL
signals
tSU;DAT
th(i)(D)
tHD;DAT
tSU;STA
data set-up time
data input hold time
data hold time
250
0
-
100
0
-
-
ns
ns
[2][3]
[4]
-
3450
-
200
4700
200
600
900 ns
[5]
set-up time for a repeated
START condition
-
ns
ns
ns
ns
ns
[6]
[2]
tHD;STA
tSU;STO
tBUF
hold time (repeated) START 30 % of SDA to
condition
4000
4000
4700
-
-
-
600
600
1300
-
-
70 % of SCL
set-up time for STOP
condition
-
bus free time between a
STOP and START condition
-
-
tSP
pulse width of spikes that
must be suppressed by the
input filter
50
50
tVD;DAT
tf(o)
data valid time
from clock
200
-
-
-
-
200
-
-
ns
output fall time
250 ns
tPOR
power-on reset pulse time
power supply falling
0.5
0.5
-
μs
EEPROM power-up timing[7]
[8]
[8]
tpu(R)
tpu(W)
read power-up time
write power-up time
-
-
1
1
-
-
1
1
ms
ms
Write cycle limits
Tcy(W) write cycle time
[9]
-
10
-
10
ms
[1] Minimum clock frequency is 0 kHz if SMBus Time-out is disabled.
[2] Delay from SDA STOP to SDA START.
[3] A device must internally provide a hold time of at least 200 ns for SDA signal (referenced to the VIH(min) of the SCL signal) to bridge the
undefined region of the falling edge of SCL.
[4] Delay from SCL HIGH-to-LOW transition to SDA edges.
[5] Delay from SCL LOW-to-HIGH transition to restart SDA.
[6] Delay from SDA START to first SCL HIGH-to-LOW transition.
[7] These parameters tested initially and after a design or process change that affects the parameter.
[8] tpu(R) and tpu(W) are the delays required from the time VDD is stable until the specified operation can be initiated.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
43 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
[9] The write cycle time is the time elapsed between the STOP command (following the write instruction) and the completion of the internal
write cycle. During the internal write cycle, SDA is released by the slave and the device does not acknowledge external commands.
t
LOW
t
r
t
f
V
V
IH
IL
SCL
SDA
t
t
HIGH
t
t
SU;STO
HD;STA
t
SU;STA
BUF
t
t
t
HD;DAT
HD;DAT
SU;DAT
V
IH
V
IL
P
S
S
P
V
V
IH
IL
SCL
SDA
t
t
SU;STA
SU;STO
V
IH
V
IL
t
W
write cycle
STOP
START
condition
condition
002aae750
S = START condition
P = STOP condition
Fig 40. AC waveforms
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
44 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
12. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
E
A
D
X
c
y
H
E
v
M
A
Z
8
5
A
2
(A )
A
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
UNIT
v
w
y
Z
θ
1
2
3
p
E
p
max.
0.15
0.05
0.95
0.85
0.30
0.19
0.20
0.13
3.1
2.9
4.5
4.3
6.5
6.3
0.7
0.5
0.70
0.35
8°
0°
mm
1.1
0.65
0.25
0.94
0.1
0.1
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
00-02-24
03-02-18
SOT530-1
MO-153
Fig 41. Package outline SOT530-1 (TSSOP8)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
45 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3 x 3 x 0.85 mm
SOT908-1
0
1
2 mm
scale
X
D
B
A
E
A
A
1
c
detail X
terminal 1
index area
e
1
terminal 1
index area
C
M
M
v
w
C
C
A
B
e
b
y
1
y
C
1
4
L
exposed tie bar (4×)
E
h
exposed tie bar (4×)
8
5
D
h
DIMENSIONS (mm are the original dimensions)
(1)
A
max.
(1)
(1)
UNIT
A
b
E
e
e
y
c
D
D
E
L
v
w
y
1
1
h
1
h
0.05
0.00
0.3
0.2
3.1
2.9
2.25
1.95
3.1
2.9
1.65
1.35
0.5
0.3
mm
0.05
0.1
1
0.2
0.5
1.5
0.1
0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
05-09-26
05-10-05
SOT908-1
MO-229
Fig 42. Package outline SOT908-1 (HVSON8)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
46 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
HXSON8: plastic thermal enhanced extremely thin small outline package; no leads;
8 terminals; body 2 x 3 x 0.5 mm
SOT1052-1
X
M
b
v
A
B
A
D
B
E
A
A
1
detail X
terminal 1
index area
1/2 e
C
terminal 1
index area
y
1
y
e
C
1
4
L
(8×)
E
h
8
5
D
h
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
max
A
A
b
D
D
E
E
e
L
v
y
y
1
1
1
1
0.5
0.04
0.3
0.2
2.1
2.0
1.9
1.6
1.4
3.1
3.0
2.9
1.6
1.4
0.45
0.35
mm
nom
min
0.5
0.1
0.05 0.05
Note
1. Dimension A is including plating thickness. The package footprint is compatible with JEDEC MO229
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
MO-229
JEITA
08-01-11
08-03-11
SOT1052-1
Fig 43. Package outline SOT1052-1 (HXSON8)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
47 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
HWSON8: plastic thermal enhanced very very thin small outline package; no leads;
8 terminals; body 2 x 3 x 0.8 mm
SOT1069-1
X
b
v
A
B
A
D
B
A
2
E
A
A
1
A
3
terminal 1
index area
detail X
1/2 e
C
terminal 1
index area
y
1
y
e
C
1
4
L
(8×)
K
E
2
8
5
D
2
0
1
2 mm
scale
Dimensions
Unit
(1)
A
A
1
A
2
A
3
b
D
D
2
E
E
2
e
K
L
v
y
y
1
max 0.80 0.05 0.65
mm nom 0.75 0.02 0.55 0.2 0.25 2.0
min 0.70 0.45 0.20 1.9 1.4 2.9 1.4
0.30 2.1 1.6 3.1 1.6
0.45
3.0
0.5
0.1 0.05 0.05
0
0.2 0.35
Note
1. Dimension A is including plating thickness. The package footprint is compatible with JEDEC MO229
sot1069-1_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
08-07-10
09-08-10
SOT1069-1
MO-229
Fig 44. Package outline SOT1069-1 (HWSON8)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
48 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
HWSON8: plastic thermal enhanced very very thin small outline package; no leads;
8 terminals; body 2 x 3 x 0.8 mm
SOT1069-2
X
D
B
A
E
A
2
A
A
1
A
3
terminal 1
index area
detail X
e
1
C
terminal 1
index area
v
w
C
C
A
B
e
b
y
1
y
C
1
4
L
K
E
2
8
5
D
2
0
1
2 mm
K
scale
Dimensions
Unit
(1)
(1)
(1)
A
A
1
A
A
3
b
D
D
2
E
E
2
e
e
1
L
v
w
y
y
1
2
max 0.80 0.05 0.65
mm nom 0.75 0.02 0.55 0.2 0.25 2.0 1.5 3.0 1.5 0.5 1.5 0.35 0.40 0.1 0.05 0.05 0.05
min 0.70 0.00 0.45 0.18 1.9 1.4 2.9 1.4 0.30 0.35
0.30 2.1 1.6 3.1 1.6
0.40 0.45
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
sot1069-2_po
References
Outline
version
European
projection
Issue date
IEC
- - -
JEDEC
JEITA
- - -
09-10-22
09-11-18
SOT1069-2
MO-229
Fig 45. Package outline SOT1069-2 (HWSON8)
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
49 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
13. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
50 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
13.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 46) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 31 and 32
Table 31. SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
235
≥ 350
220
< 2.5
≥ 2.5
220
220
Table 32. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 46.
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
51 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 46. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
14. Abbreviations
Table 33. Abbreviations
Acronym
ADC
Description
Analog-to-Digital Converter
Alert Response Address
Charged-Device Model
ARA
CDM
CMOS
CPU
Complementary Metal-Oxide Semiconductor
Central Processing Unit
Double Data Rate
DDR
DIMM
DRAM
ECC
Dual In-line Memory Module
Dynamic Random Access Memory
Error-Correcting Code
EEPROM
ESD
Electrically Erasable Programmable Read-Only Memory
ElectroStatic Discharge
Human Body Model
HBM
I2C-bus
Inter-Integrated Circuit bus
Least Significant Bit
LSB
MM
Machine Model
MSB
Most Significant Bit
PC
Personal Computer
PCB
Printed-Circuit Board
POR
Power-On Reset
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
52 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
Table 33. Abbreviations …continued
Acronym Description
RDIMM
SMBus
SO-DIMM
SPD
Registered Dual In-line Memory Module
System Management Bus
Small Outline Dual In-line Memory Module
Serial Presence Detect
15. Revision history
Table 34. Revision history
Document ID
SE97_7
Release date
Data sheet status
Change notice
Supersedes
20100129
Product data sheet
-
SE97_6
Modifications:
• Table 1 “Ordering information”:
–
added Type number SE97TP/S900
–
added Table note [3]
• Added (new) Figure 6 “Pin configuration for HWSON8 (SOT1069-2)”
• Section 7.7 “SMBus time-out”, 1st paragraph, second sentence: changed from “between 25 ns and
35 ms” to “between 25 ms and 35 ms”
• Table 8 “Register summary”, address 07h (Device ID/Revision register):
–
Default state is split: A200h for SE97PW, SE97TK; A201h for SE97TP, SE97TL
• Section 8.8 “Device ID register”:
–
1st paragraph, 1st sentence: changed from “The SE97 device ID is A1h.” to “The SE97 device ID
is A2h.”
–
Table note [1] modified
• Added (new) Figure 45 “Package outline SOT1069-2 (HWSON8)”
SE97_6
SE97_5
SE97_4
SE97_3
SE97_2
SE97_1
20090817
20090806
20090130
20080715
20071012
20070524
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Objective data sheet
-
-
-
-
-
-
SE97_5
SE97_4
SE97_3
SE97_2
SE97_1
-
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
53 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
I2C-bus — logo is a trademark of NXP B.V.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
54 of 55
SE97
NXP Semiconductors
DDR memory module temp sensor with integrated SPD, 3.3 V
18. Contents
1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
General features. . . . . . . . . . . . . . . . . . . . . . . . 2
Temperature sensor features . . . . . . . . . . . . . . 2
Serial EEPROM features . . . . . . . . . . . . . . . . . 2
7.10.3.2 Selective read . . . . . . . . . . . . . . . . . . . . . . . . 21
7.10.3.3 Sequential read . . . . . . . . . . . . . . . . . . . . . . . 22
2
7.11
Hot plugging. . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.1
2.2
2.3
8
8.1
8.2
Register descriptions . . . . . . . . . . . . . . . . . . . 23
Register overview . . . . . . . . . . . . . . . . . . . . . 23
Capability register
3
4
5
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4
(00h, 16-bit read-only) . . . . . . . . . . . . . . . . . . 24
Configuration register
8.3
(01h, 16-bit read/write). . . . . . . . . . . . . . . . . . 25
Temperature format . . . . . . . . . . . . . . . . . . . . 29
Temperature Trip Point registers . . . . . . . . . . 30
Upper Boundary Alarm Trip register
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 5
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 6
8.4
8.5
8.5.1
7
Functional description . . . . . . . . . . . . . . . . . . . 7
Serial bus interface. . . . . . . . . . . . . . . . . . . . . . 7
Slave address. . . . . . . . . . . . . . . . . . . . . . . . . . 7
EVENT output condition . . . . . . . . . . . . . . . . . . 8
EVENT pin output voltage levels and
resistor sizing . . . . . . . . . . . . . . . . . . . . . . . . . . 8
EVENT thresholds . . . . . . . . . . . . . . . . . . . . . 10
Alarm window . . . . . . . . . . . . . . . . . . . . . . . . . 10
Critical trip. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
EVENT operation modes . . . . . . . . . . . . . . . . 11
Comparator mode. . . . . . . . . . . . . . . . . . . . . . 11
Interrupt mode . . . . . . . . . . . . . . . . . . . . . . . . 11
Conversion rate . . . . . . . . . . . . . . . . . . . . . . . 12
What temperature is read when
(16-bit read/write). . . . . . . . . . . . . . . . . . . . . . 30
Lower Boundary Alarm Trip register
(16-bit read/write). . . . . . . . . . . . . . . . . . . . . . 31
Critical Alarm Trip register
(16-bit read/write). . . . . . . . . . . . . . . . . . . . . . 31
Temperature register
(16-bit read-only) . . . . . . . . . . . . . . . . . . . . . . 32
Manufacturer’s ID register
8.5.2
8.5.3
8.6
7.1
7.2
7.3
7.3.1
7.3.2
8.7
7.3.2.1
7.3.2.2
7.3.3
7.3.3.1
7.3.3.2
7.4
(16-bit read-only) . . . . . . . . . . . . . . . . . . . . . . 33
Device ID register . . . . . . . . . . . . . . . . . . . . . 33
SMBus register . . . . . . . . . . . . . . . . . . . . . . . 34
8.8
8.9
9
Application design-in information. . . . . . . . . 35
SE97 in memory module application . . . . . . . 36
Layout consideration . . . . . . . . . . . . . . . . . . . 36
Thermal considerations . . . . . . . . . . . . . . . . . 36
9.1
9.2
9.3
7.4.1
conversion is in progress . . . . . . . . . . . . . . . . 12
Power-up default condition. . . . . . . . . . . . . . . 12
Device initialization. . . . . . . . . . . . . . . . . . . . . 12
SMBus time-out . . . . . . . . . . . . . . . . . . . . . . . 13
SMBus ALERT Response Address
7.5
7.6
7.7
7.8
10
11
12
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 37
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Package outline. . . . . . . . . . . . . . . . . . . . . . . . 45
13
Soldering of SMD packages. . . . . . . . . . . . . . 50
Introduction to soldering. . . . . . . . . . . . . . . . . 50
Wave and reflow soldering. . . . . . . . . . . . . . . 50
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . 50
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . 51
(ARA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
SMBus/I2C-bus interface . . . . . . . . . . . . . . . . 14
EEPROM operation . . . . . . . . . . . . . . . . . . . . 17
Write operations . . . . . . . . . . . . . . . . . . . . . . . 17
7.9
7.10
7.10.1
13.1
13.2
13.3
13.4
7.10.1.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.10.1.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7.10.1.3 Acknowledge polling. . . . . . . . . . . . . . . . . . . . 18
14
15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 52
Revision history . . . . . . . . . . . . . . . . . . . . . . . 53
7.10.2
Memory protection . . . . . . . . . . . . . . . . . . . . . 18
16
Legal information . . . . . . . . . . . . . . . . . . . . . . 54
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 54
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 54
7.10.2.1 Permanent Write Protection (PWP) . . . . . . . . 20
7.10.2.2 Reversible Write Protection (RWP) and
Clear Reversible Write Protection (CRWP) . . 20
7.10.2.3 Read Permanent Write Protection (RPWP),
Read Reversible Write Protection (RRWP),
16.1
16.2
16.3
16.4
17
18
Contact information . . . . . . . . . . . . . . . . . . . . 54
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
and Read Clear Reversible Write Protection
(RCRWP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
7.10.3
Read operations . . . . . . . . . . . . . . . . . . . . . . . 21
7.10.3.1 Current address read . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 January 2010
Document identifier: SE97_7
相关型号：
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