SI2304DS [NXP]
N-channel enhancement mode field-effect transistor; N沟道增强模式音响场效晶体管
| 型号： | SI2304DS |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode field-effect transistor |
| 文件： | 总12页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI2304DS
N-channel enhancement mode field-effect transistor
Rev. 01 — 17 August 2001
Product data
M3D088
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology
Product availability:
SI2304DS in SOT23.
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Subminiature surface mount package.
3. Applications
■ Battery management
■ High speed switch
■ Low power DC to DC converter.
4. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
3
d
s
2
source (s)
drain (d)
3
g
1
2
MBB076
Top view
MSB003
SOT23
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
−
Typ
−
Max
30
Unit
V
VDS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
Tsp = 25 °C; VGS = 5 V
Tsp = 25 °C
drain current (DC)
−
−
1.7
A
Ptot
Tj
total power dissipation
junction temperature
−
−
0.83
150
117
190
W
−
−
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA
VGS = 4.5 V; ID = 500 mA
−
−
−
−
6. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
30
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
−
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C; RGS = 20 kΩ
−
30
V
−
±20
1.7
V
Tsp = 25 °C; VGS = 5 V; Figure 2 and 3
Tsp = 100 °C; VGS = 5 V; Figure 2 and 3
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Tsp = 25 °C; Figure 1
−
A
−
1.1
A
IDM
Ptot
Tstg
Tj
peak drain current
−
7.5
A
total power dissipation
storage temperature
−
0.83
+150
+150
W
°C
°C
−65
−65
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
−
−
0.83
3.3
A
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
2 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa25
03aa17
120
der
120
der
I
P
(%)
100
(%)
100
80
60
40
20
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
(oC)
T
(oC)
T
sp
sp
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
-----------------------
ID
P
°
Ider
=
× 100%
-------------------
tot(25 C)
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
003aaa120
2
10
I
D
(A)
R
= V
/ I
DS D
DSon
10
tp = 10 µs
1
1 ms
t
p
P
δ =
D.C.
10 ms
T
-1
10
100 ms
t
t
p
T
-2
10
-1
10
2
10
1
10
V
(V)
DS
Tsp = 25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
3 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value Unit
100 K/W
Rth(j-sp) thermal resistance from junction to solder point
mounted on a metal clad substrate; Figure 4
7.1 Transient thermal impedance
003aaa121
3
10
Z
th(j-sp)
(K/W)
2
10
δ =
0.02
0.05
0.1
t
p
P
δ =
T
10
0.2
0.5
Single pulse
t
t
p
T
1
1
10
-4
10
-3
10
-2
-1
10
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
4 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
30
27
40
−
−
V
V
Tj = −55 °C
−
VGS(th)
gate-source threshold voltage
drain-source leakage current
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
1.5
0.5
−
2
−
−
−
V
V
V
Tj = 150 °C
−
Tj = −55 °C
2.7
IDSS
VDS = 30 V; VGS = 0 V
Tj = 25 °C
−
−
−
0.01 0.5
µA
µA
Tj = 150 °C
−
10
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 500 mA; Figure 7 and 8
Tj = 25 °C
10
100 nA
RDSon
drain-source on-state resistance
−
−
117 mΩ
VGS = 4.5 V; ID = 500 mA
Tj = 25 °C
−
−
−
−
190 mΩ
300 mΩ
Tj = 150 °C
Dynamic characteristics
gfs
forward transconductance
VDS = 10 V; ID = 1 A
1.4
−
2.5
4.6
0.6
−
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VDD = 15 V; VGS = 10 V; ID = 0.5 A; Figure 13
nC
nC
−
−
−
1.35 1.83 nC
147 195 pF
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
−
−
65
41
4
78
56
6
pF
pF
ns
ns
ns
ns
−
VDD = 15 V; RL = 15 Ω; VGS = 10 V
−
−
7.5
18
13
12
35
19
td(off)
tf
turn-off delay time
fall time
−
−
Source-drain diode
VSD
trr
source-drain (diode forward) voltage IS = 0.83 A; VGS = 0 V; Figure 12
−
−
0.7
69
1.2
V
reverse recovery time
IS = 1 A; dIS/dt = −100 A/µs; VGS = 0 V;
−
ns
VDS = 25 V
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
5 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
003aaa123
003aaa122
5
4
10.0
I
V
> I x R
D
D
8.0
I
DS
DSon
D
5.0
4.0
(A)
(A)
4
o
3
2
3.5
= 150
C
o
T = 25
C
j
3
2
3.0
2.5
1
0
1
0
V
(V) =
V
GS
0
1
2
3
4
5
0
0.5
1.0
1.5
(V)
DS
V
(V)
GS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aaa125
003aaa124
2.0
0.5
a
R
DSon
(Ω)
1.6
0.4
1.2
0.3
V
(V) =
3.5
5.0
GS
0.8
0.4
0.2
0.1
0
8.0
10.0
0
-20
1
3
-60
2
20
60
140
180
100
0
I
(A)
D
o
T ( C)
j
Tj = 25 °C
RDSon
a=
-----------------------------
RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
6 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa32
03aa35
-1
10
5
I
D
V
GS(th)
(A)
(V)
-2
10
4
3
2
1
0
max
typ
min
typ
max
-3
-4
-5
10
10
min
10
-6
10
0
1
2
5
4
3
-60
0
60
120
180
V
(V)
T (oC)
GS
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
003aaa126
3
10
C
(pF)
C
iss,
2
10
C
oss,
C
rss
10
-1
2
10
1
10
10
V
(V)
DS
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
7 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
003aaa128
003aaa127
2.0
10
V
GS
I
S
(V)
8
(A)
6
4
o
T = 150
C
j
1.0
2
0
o
T = 25
C
j
0
0.8
0.6
0.4
0
2
4
6
8
0.2
V
(V)
SD
Q
(nC)
G
Tj = 25 oC and 150 oC; VGS = 0 V
ID = 0.5 A; VDD = 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
8 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 14. SOT23.
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
9 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6:
Revision history
CPCN
Rev Date
Description
01 20010817
-
Product data; initial version
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 17 August 2001
10 of 12
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
11 of 12
9397 750 08526
Product data
Rev. 01 — 17 August 2001
SI2304DS
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 17 August 2001
Document order number: 9397 750 08526
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