SI4420DY,518 [NXP]
SI4420DY;
| 型号： | SI4420DY,518 |
| 厂家： | 
NXP |
| 描述： | SI4420DY 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4420DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 01 — 28 May 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4420DY in SOT96-1 (SO8).
2. Features
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertors
■ DC motor control
■ Lithium-ion battery applications
■ Notebook PC
c
c
■ Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin
Description
source (s)
gate (g)
Simplified outline
Symbol
1,2,3
4
d
s
8
5
5,6,7,8
drain (d)
g
1
4
MBB076
Top view
MBK187
SOT96-1 (SO8)
1. TrenchMOS is a trademark of Royal Philips Electronics.
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
30
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 150 °C
Tamb = 25 °C; pulsed; tp ≤ 10 s
Tamb = 25 °C; pulsed; tp ≤ 10 s
−
12.5
2.5
150
9
A
Ptot
Tj
total power dissipation
junction temperature
−
W
−
°C
mΩ
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 12.5 A
VGS = 4.5 V; ID = 10.5 A
7.3
10.9
13
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
30
Unit
V
VDS
VGS
ID
drain-source voltage (DC)
Tj = 25 to 150 °C
gate-source voltage (DC)
drain current (DC)
−
±20
12.5
10
V
Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2
Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tamb = 25 °C; pulsed; tp ≤ 10 s;
−
A
−
A
IDM
Ptot
peak drain current
−
50
A
total power dissipation
−
2.5
W
W
°C
°C
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1
−
1.6
Tstg
Tj
storage temperature
−55
−55
+150
+150
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tamb = 25 °C; pulsed; tp ≤ 10 s
−
2.3
A
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
2 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa19
03aa11
120
120
I
100
der
(%)
100
80
60
40
20
0
P
der
(%)
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100 125 150 175
o
o
T
( C)
T
( C)
amb
amb
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
ID
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ae55
2
10
RDSon = VDS/ ID
ID
(A)
10
tp = 10 µs
100 µs
1 ms
1
10 ms
t
p
P
D.C.
δ
=
T
-1
10
10
100 ms
t
t
p
T
-2
-1
10
2
1
10
10
VDS (V)
Tamb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
3 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Value Unit
50 K/W
Rth(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint, t ≤ 10 sec. Figure 4
7.1 Transient thermal impedance
03ae54
2
10
Zth(j-amb)
δ = 0.5
(K/W)
0.2
10
0.1
0.05
0.02
1
t
p
P
δ
=
T
t
t
single pulse
p
T
-1
10
-4
10
-3
10
-2
10
-1
10
2
3
10
t
p (s)
1
10
10
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
4 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Static characteristics
Conditions
Min Typ Max Unit
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VDS = VGS; Figure 9
VDS = 30 V; VGS = 0 V
1
−
−
V
Tj = 25 °C
−
−
−
−
1
5
µA
µA
Tj = 55 °C
−
IGSS
gate-source leakage current
on-state drain current
VGS = ±20 V; VDS = 0 V
VDS ≥ 5 V; VGS = 10 V
−
100 nA
ID(on)
RDSon
30
−
−
A
drain-source on-state resistance
VGS = 10 V; ID = 12.5 A; Figure 7 and 8
VGS = 4.5 V; ID = 10.5 A; Figure 7 and 8
7.3
9
mΩ
mΩ
−
10.9 13
Dynamic characteristics
gfs
forward transconductance
VDS = 15 V; ID = 7 A; Figure 11
−
−
−
−
−
−
−
−
15
−
S
Qg(tot)
Qgs
Qgd
td(on)
tr
total gate charge
ID = 12.5 A; VDD = 15 V; VGS = 10 V; Figure 14
64.5 120 nC
gate-source charge
gate-drain (Miller) charge
turn-on delay time
turn-on rise time
7.6
11.5
12
−
nC
nC
ns
−
VDD = 15 V; RD = 15 Ω; VGS = 10 V; RG = 6 Ω
30
60
15
ns
td(off)
tf
turn-off delay time
turn-off fall time
60
150 ns
140 ns
50
Source-drain (reverse) diode
VSD
trr
source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13
−
−
0.7
60
1.1
V
reverse recovery time
IS = 2.3 A; dIS/dt = −100 A/µs
−
ns
03ae56
03ae58
50
50
10 V
4 V
VDS > ID x RDSon
ID
ID
(A)
(A)
40
40
30
20
10
0
30
20
150 ºC
VGS = 3 V
10
0
25 ºC
0
0.5
1
1.5
2
VGS (V)
4
VDS (V)
0
1
2
3
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 5. Output characteristic; drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristic: drain current as
function of gate-source voltage; typical values
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
5 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ae57
0.02
RDSon
(Ω)
03ad57
2
a
1.6
4 V
1.2
0.8
0.4
0
0.01
VGS =10 V
Tj = 25 ºC
0
-60
0
60
120
180
Tj (ºC)
0
10
20
30
40
50
ID (A)
Tj = 25 °C
RDSon
a =
---------------------------
R
°
DSon(25 C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa36
03aa33
-1
10
2.5
I
D
V
GS(th)
(A)
(V)
2
-2
10
-3
10
1.5
1
min
typ
max
-4
-5
-6
10
10
10
0.5
0
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
V
3
(V)
T
(oC)
j
GS
ID = 250 µA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
6 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ae59
03ae61
4
50
10
VDS > ID x RDSon
gfs
Ciss
,
Tj = 25 ºC
(S)
40
Coss
,
Crss
(pF)
30
20
10
0
C
iss
150 ºC
3
10
Coss
Crss
2
10
-1
10
2
10
0
10
20
30
40
50
1
10
ID (A)
V
DS (V)
Tj = 25 °C and 150 °C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ae60
03ae62
50
10
VGS = 0 V
ID = 12.5A
VGS
IS
VDD = 15 V
Tj = 25 ºC
(V)
8
(A)
40
30
6
4
2
0
20
150 ºC
10
Tj = 25 ºC
0
0
0.3
0.6
0.9
1.2
0
15
30
45
60
75
QG (nC)
VSD (V)
Tj = 25 °C and 150 °C; VGS = 0 V
ID = 12.5 A; VDD =15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
7 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-05-22
99-12-27
SOT96-1
076E03
MS-012
Fig 15. SOT96-1 (SO8).
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
8 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
Product specification; initial version
01 20010528
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
9 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
[1]
[2]
Data sheet status
Product status
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 08239
© Philips Electronics N.V. 2001 All rights reserved.
Product data
Rev. 01 — 28 May 2001
10 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
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For all other countries apply to: Philips Semiconductors,
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Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA72)
9397 750 08239
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 28 May 2001
11 of 12
Si4420DY
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 May 2001
Document order number: 9397 750 08239
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