SOD323 [NXP]
Low-leakage diode; 低漏电二极管
| 型号： | SOD323 |
| 厂家： | 
NXP |
| 描述： | Low-leakage diode |
| 文件： | 总8页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAS416
Low-leakage diode
Product data sheet
2004 Jan 26
Supersedes data of 2002 Nov 19
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
FEATURES
PINNING
• Plastic SMD package
PIN
1
DESCRIPTION
• Low leakage current: typ. 3 pA
cathode
• Switching time: typ. 0.8 µs
2
anode
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
handbook, halfpage
1
2
APPLICATIONS
• Low-leakage current applications in surface mounted
MAM406
circuits.
Marking code: D4.
The marking bar indicates the cathode.
DESCRIPTION
Epitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
Fig.1 Simplified outline (SOD323) (SC-76) and
symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
NUMBER
NAME
VERSION
BAS416
−
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VRRM
VR
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
85
V
V
75
IF
see Fig.2
200
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 26
2
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
TYP.
MAX.
UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 75 V
−
−
−
−
0.9
V
V
V
V
1
1.1
1.25
IR
reverse current
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
80
−
Cd
trr
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
2
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
0.8
3
measured at IR = 1 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth(j-a)
thermal resistance from junction to ambient
note 1
450
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
2004 Jan 26
3
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
GRAPHICAL DATA
MHC323
MLB752 - 1
300
300
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
200
(1)
(2)
(3)
100
100
0
0
0
0.4
0.8
1.2
1.6
0
100
200
V
(V)
T
(°C)
F
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous
forward current as a function of
ambient temperature.
Fig.3 Forward current as a function of
forward voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
MBG526
MLB754
2
10
2
handbook, halfpage
handbook, halfpage
I
R
(nA)
(1)
10
C
d
(pF)
1
1
1
10
(2)
2
10
3
0
0
10
5
10
15
20
0
50
100
150
200
o
V
(V)
R
T
( C)
j
VR = 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of
junction temperature.
Fig.6 Diode capacitance as a function
of reverse voltage; typical values.
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
5
2004 Jan 26
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Jan 26
6
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS416
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
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will prevail.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 26
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp8
Date of release: 2004 Jan 26
Document order number: 9397 750 12591
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