TDA1576TD [NXP]
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INTEGRATED CIRCUITS
DATA SHEET
TDA1576
FM/IF amplifier/demodulator circuit
1998 Nov 18
Product specification
Supersedes data of March 1985
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
FEATURES
GENERAL DESCRIPTION
• Symmetrical limiting IF amplifier
• Symmetrical quadrature demodulator
• Internal muting circuit
The TDA1576 is a monolithic integrated FM/IF amplifier
circuit for use in mono and stereo FM-receivers of car
radios or home sets.
• Symmetrical AFC output
• Field strength indication output
• Detune detector
• Reference voltage output
• Electronic smoothing of the supply voltage
• Standby on/off switching circuit.
QUICK REFERENCE DATA
fo = 10.7 MHz; ∆f = ±22.5 kHz; fm = 400 Hz; QL = 20; 50 µs de-emphasis.
SYMBOL PARAMETER CONDITIONS
VP supply voltage (pin 1)
MIN.
7.5
TYP.
MAX.
20
UNIT
−
V
IP
supply current
VP = 8.5 V
−
−
−
−
16
18
22
8
−
−
−
−
mA
mA
µV
VP = 15 V
ViIF(rms)
input sensitivity (RMS value)
−3 dB before limiting
µV
S + N
= 26 dB
= 46 dB
--------------
N
−
35
−
µV
S + N
--------------
N
VoAF(rms)
AF output voltage (RMS value)
VP = 8.5 V
VP = 15 V
−
−
67
−
−
mV
mV
135
THD
total harmonic distortion
single tuned circuit
−
−
−
0.1
0.02
76
−
−
−
%
two tuned circuits
%
signal plus noise-to-noise ratio
V
iIF > 1 mV (RMS);
dB
S + N
--------------
N
VP = 8.5 V
ViIF > 1 mV (RMS);
VP = 15 V
−
80
−
dB
αAM
∆fi
AM suppression
−
50
±3
90
−
−
dB
AFC offset drift
−
±6
−
kHz
dB
∆Vi
IL
field strength indication
permissible indicator load current
operating ambient temperature
−
−
2
mA
°C
Tamb
−30
−
+80
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA1576
DIP18 plastic dual in-line package; 18 leads (300 mil)
SOT102-1
1998 Nov 18
2
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,kfullapgwedhit
+
560
pF
750
Ω
(2)
L
0.1 µF
10 Ω
47 µF
33
pF
33
pF
V
P
(15 V)
C
IF1
IF2 RES2
RES1
PS
3
7
6
4
1
2
25 kΩ
25 kΩ
V
17
15
16
FB1
15 kΩ 15 kΩ
8.3 kΩ
0.1
µF
R
S
AFC
voltage
V
V
iIF
ilF
5.5
kΩ
+
−
4-STAGE
LIMITER/
AMPLIFIER
0.1 µF
250
Ω
QUADRATURE
MUTING
DEMODULATOR
R
V
S
FB2
3.7
kΩ
3.7
kΩ
0.1
µF
(3.3 kΩ)
8
9
V
oAF
V
V
V
oAF1
S
(1)
C
8-9
LEVEL
DETECTOR
oAF2
TDA1576
Z
Z
9-10
(180
kΩ)
8-10
(240
kΩ)
1.7 V
DETUNE
DETECTOR
INDICATOR
DRIVER
STANDBY
SWITCH
INTERNAL
POWER
4 V
G
SUPPLY
(6 V
)
BE
I
11 =
0.5 mA
5.3 V
V
10
i(det)
20 kΩ
(185 V )
T
13
V
14
5
12
11
V
18
GND
V
V
FMON
F
F0
ref
o(det)
220 kΩ
3.6 kΩ
1
nF
0.47 µF
(25 kΩ)
FM
on
1 mA
A
10 kΩ
MGE456
(AM)
+
detune
voltage
level output zero adjustment
reference
voltage
field
strength
indicator
(<23 V)
for
of field strength
indicator
field strength
(1) For 50 µs de-emphasis: C8−9 = 6.8 nF; for stereo operation C8−9 = 56 pF.
(2) L = 0.38 µH; Qo = 70; QL = 20; adjusted to minimum 2nd harmonic distortion (d2); at Vi = 1 mV; coil: 6 turns CuL (0.25 mm) on coil former KAN (C).
Fig.1 Block diagram and test circuit.
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
PINNING
SYMBOL PIN
DESCRIPTION
VP
1
2
positive supply voltage
CPS
smoothing capacitor of power supply
IF signal to resonant circuit
resonant circuit input 1
IF1
3
handbook, halfpage
V
1
2
3
4
5
6
7
8
9
18 GND
P
RES1
FMON
RES2
IF2
4
C
PS
17
16
15
14
13
12
11
10
V
5
FM-ON, standby switch
FB1
6
resonant circuit input 2
IF1
RES1
FMON
RES2
IF2
V
V
FB2
ilF
7
IF signal to resonant circuit
AF output voltage 1 (0° phase)
AF output voltage 2 (180° phase)
VoAF1
VoAF2
Vi(det)
8
V
V
V
TDA1576
F0
F
9
10
detune detector input voltage for
external audio reference
ref
V
V
V
Vo(det)
Vref
11
12
13
14
15
16
17
18
detune detector output voltage
reference voltage output
level output for field strength
zero adjust voltage for field strength
FM/IF input signal voltage
DC feedback 2
oAF1
o(det)
i(det)
V
oAF2
VF
MBH286
VF0
ViIF
VFB2
VFB1
GND
DC feedback 1
Fig.2 Pin configuration.
ground (0 V)
1998 Nov 18
4
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VP
V2
supply voltage (pin 1)
voltage on pin 2
0
0
0
0
0
0
23
V
V
V
V
V
VP
23
V5, 14
V12
voltage on pins 5 and 14
voltage on pin 12
7
V13
voltage on pin 13
6
Ptot
total power dissipation
storage temperature
operating ambient temperature
800
+150
+80
mW
°C
Tstg
Tamb
−55
−30
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
80
K/W
1998 Nov 18
5
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
CHARACTERISTICS
VP = 7.5 to 20 V; fIF = 10.7 MHz; RS = 60 Ω; fm = 400 Hz with ∆f = ±22.5 kHz; 50 µs de-emphasis (C8−9 = 6.8 nF);
amb = 25 °C and measurements taken in Fig.1; unless otherwise specified. The demodulator circuit is adjusted at
minimum second harmonic distortion for ViIF = 1 mV and a deviation ∆f = ±75 kHz.
T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
IP
supply current without load
I12 = I13 = 0; VP = 8.5 V
I12 = I13 = 0; VP = 15 V
10
16
23
mA
12
18
25
mA
IF amplifier/detector
ViIF(rms)
input sensitivity (RMS value; pin 15) −3 dB before limiting
S + N
−
−
22
8
30
µV
µV
−
= 26 dB
--------------
N
−
−
35
−
−
µV
S + N
--------------
N
= 46 dB
VoIF(p-p)
output voltage at pins 3 and 7
(peak-to-peak value)
Z3, 7 = 10 pF parallel to
1 MΩ
680
mV
R3-7
Z4-6
C4-6
R8, 9
V8, 9
output resistance
input impedance
input capacitance
output resistance
DC output voltage
−
250
30
−
Ω
−
−
kΩ
pF
kΩ
V
−
1
−
−
3.7
5.5
9.8
67
−
VP = 8.5 V
−
−
VP = 15 V
−
−
V
VoAF(rms) AF output voltage (RMS value)
QL = 20; VP = 8.5 V
QL = 20; VP = 15 V
60
120
75
150
mV
mV
135
THD
total harmonic distortion
single tuned circuit
two tuned circuits
QL = 20
−
−
−
0.1
0.02
76
−
−
−
%
%
signal plus noise-to-noise ratio
(pins 8 and 9)
B = 250 Hz to 15 kHz;
dB
S + N
--------------
N
Vi > 1 mV (RMS); VP = 8.5 V
B = 250 Hz to 15 kHz;
Vi > 1 mV (RMS); VP = 15 V
−
−
80
54
−
−
dB
dB
αAM
AM suppression
ViIF = 10 mV;
FM: 70 Hz; ∆f = ±22.5 kHz;
AM: 1 kHz; m = 30%; note 1
ViIF
IF input voltage
α > 40 dB
0.5
43
−
500
mV
dB
α100
hum suppression at f = 100 Hz
VP = 100 mV (RMS);
48
−
C2 = 47 µF
AFC tuning slope at QL = 20
VP = 8.5 V
VP = 15 V
−
−
8.5
17
−
−
mV/kHz
mV/kHz
∆ V 8 – 9
----------------
∆fo
1998 Nov 18
6
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
SYMBOL
PARAMETER
CONDITIONS
Vi = 1 mV; VP = 8.5 V
Vi = 1 mV; VP = 15 V
MIN.
TYP.
MAX.
UNIT
mV
AFC offset voltages at QL = 20
−
−
−
−
−
∆V8-9
±100
±200
±50
mV
mV
Vi = 30 µV to 500 mV
(Vref = 1 mV and muting);
VP = 8.5 V
±25
Vi = 30 µV to 500 mV
(Vref = 1 mV and muting);
VP = 15 V
−
mV
±50
±100
Field strength output; see Fig.7
Vi
I
14 = 0
0.02
−
600
mV
indicator sensitivity
output voltage
V13
R13 = 3.6 kΩ; I14 = 0
V
iIF = 0
−
0
200
4.1
−
mV
V
ViIF = 250 mV (RMS)
3.2
−2
5
3.6
−
I13
mA
V
available output current
V13
V5 > 3.5 V
−
−
reverse voltage at output for FM off
Detuning detector
I10
V11
I11
V
10-9 = 0
−
20
−
100
5.0
0.65
−
nA
V
quiescent input current
output voltage
1.8
0.35
−
maximum output current
voltage gain
0.5
3.3
mA
Gv
∆V11/∆(±V10-9) at
I11 = 0.25 mA; VP = 15 V
V10-9
input offset voltage (pin 10)
V11 = 2.5 V
−
20
−
mV
Reference voltage
Vref reference voltage (pin 12)
I12 = −1 mA; VP = 8.5 V
−
−
−
5.1
−
−
−
V
I12 = −1 mA; VP = 15 V
5.3
V
I12
available output current
−2.5
mA
Standby switch
V5
input voltage for FM on
−
−
−
−
2
V
input voltage for FM off
input current for FM on
3.5
−
−
V
I5
−100
µA
Note
1. Simultaneously measured.
1998 Nov 18
7
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
MGE460
MGE459
150
30
handbook, halfpage
handbook, halfpage
Q
= 30
L
V
o
I
P
(mV)
(mA)
20
10
100
20
typ
50
10
0
0
0
10
20
0
10
20
V
(V)
V
(V)
P
P
Fig.4 AF output voltage as a function of VP;
iIF = 1 mV; ∆f = ±15 kHz; fm = 400 Hz;
typical values.
V
Fig.3 Supply current consumption as a function of
VP without load.
MGE461
1.5
handbook, halfpage
Q
= 30
L
THD
(%)
20
1
0.5
10
0
0
±50
±100
∆f (kHz)
Fig.5 Total harmonic distortion for single tuned
circuit; ViIF = 1 mV; fm = 400 Hz; adjusted at
minimum 2nd distortion; typical values.
1998 Nov 18
8
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
MGE462
40
V
o
(dB)
20
∆f =
±75 kHz
±40 kHz
±15 kHz
0
−20
−40
−60
S + N
N
−80
2
3
4
5
6
1
10
10
10
10
10
10
V (µV)
i
Fig.6 AF output voltage level as a function of IF input voltage; VP = 15 V; fm = 400 Hz; B = 250 Hz to 16 kHz;
QL = 20; C8−9 = 6.8 nF.
MGE463
4
V
= 0 V
14
V
13
(V)
I
= 0 V
14
3
2
1
0
2
3
4
5
6
1
10
10
10
10
10
10
V (µV)
i
Fig.7 Voltage at field strength indicator output (proportional to V12); R13 = 3.6 kΩ.
1998 Nov 18
9
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
MGE464
MGE465
20
20
handbook, halfpage
handbook, halfpage
αV
αV
o
o
(dB)
(dB)
FM on
0
0
−20
−40
−20
−40
−60
−80
−60
FM off
−80
0
0.2
0.4
0.6
0.8
1.0
(V)
0
1
2
3
4
V
(V)
V
5
11
Fig.9 FM on/FM off standby switch; attenuation of
output voltage (αVo) as a function of control
voltage V5.
Fig.8 Attenuation of output voltage (αVo) as a
function of the muting control voltage V11.
MGE466
6
V
11
(V)
5
R
= 0
8-10
R
= 240 kΩ
= 180 kΩ
4
3
2
1
0
8-10
R
9-10
(1)
−300
−200
−100
0
+100
+200
+300
∆f (kHz)
(1) Limited by external preset (α × V12−18).
Fig.10 Detuning detector output voltage; VP = 7.5 to 20 V; QL = 20.
10
1998 Nov 18
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
33 pF
3
39 pF
(1)
(1)
4
560
pF
560
pF
1 kΩ
L2
TDA1576
L1
390 Ω
6
7
39 pF
MGE457
33 pF
9
8
C
8-9
V
oAF
Adjustment of the demodulator circuit is obtained with an IF signal which is higher than the 3 dB limiting level; L2 should be short-circuited or detuned;
L1 should be adjusted to minimum d2 distortion, and then L2 to minimum d2 distortion.
(1) Coil data: L1 = L2 = 0.38 µH; Qo = 70; coil former KAN (C).
Fig.11 An example of the TDA1576 when using a demodulator with two tuned circuits.
MGE467
0.3
THD
(%)
0.2
0.1
−75
−50
−25
0
+25
+50
+75
∆f (kHz)
(f = 10.7 MHz)
o
Fig.12 Total harmonic distortion as a function of detuning; fm = 400 Hz; C8−9 = 6.8 nF; ∆f = ±75 kHz; Vo = 330 mV
for a frequency deviation ∆f = ±75 kHz.
1998 Nov 18
11
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
APPLICATION INFORMATION
R6
R5
4.7
kΩ
FM/IF
input
A
1 mA
220 kΩ
V
V
F
i
detune
voltage
V
(R
)
ref
S
R3
3.6 kΩ
C8
1 nF
C6
0.1 µF
C4
0.1 µF
C3
C10
0.47
µF
R4
10
kΩ
0.1 µF
R
S
18
1
17
2
16
3
14
13
6
12
7
11
8
10
9
15
4
R9
180 kΩ
TDA1576
R10
240 kΩ
5
V
P
(1)
C11
C5
C7
C9
C1
C2
R1
0.1 µF
47 µF
10 Ω
33 pF
560 pF
R2
33 pF
R7
3.3 kΩ
R8
3.3 kΩ
750 Ω
C12
L
0.38 µH
FM on
AFC
voltage
+
V
oAF
MGE458
(1) For mono C11 = 6.8 nF; for stereo C11 = 56 pF.
Fig.13 Application diagram.
1998 Nov 18
12
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
PACKAGE OUTLINE
DIP18: plastic dual in-line package; 18 leads (300 mil)
SOT102-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
b
2
18
10
M
H
pin 1 index
E
1
9
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.40
1.14
0.53
0.38
1.40
1.14
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
0.85
0.055 0.021 0.055 0.013
0.044 0.015 0.044 0.009
0.86
0.84
0.26
0.24
0.15
0.13
0.32
0.31
0.37
0.33
inches
0.19
0.020
0.15
0.033
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-10-14
95-01-23
SOT102-1
1998 Nov 18
13
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
300 and 400 °C, contact may be up to 5 seconds.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
1998 Nov 18
14
Philips Semiconductors
Product specification
FM/IF amplifier/demodulator circuit
TDA1576
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Nov 18
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Middle East: see Italy
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Fax. +43 160 101 1210
Tel. +64 9 849 4160, Fax. +64 9 849 7811
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Norway: Box 1, Manglerud 0612, OSLO,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belgium: see The Netherlands
Brazil: see South America
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Portugal: see Spain
Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Colombia: see South America
Czech Republic: see Austria
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Slovakia: see Austria
Slovenia: see Italy
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/750/02/pp16
Date of release: 1998 Nov 18
Document order number: 9397 750 04822
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