TDA7021T [NXP]
FM radio circuit for MTS; 为MTS FM收音机电路
| 型号： | TDA7021T |
| 厂家： | 
NXP |
| 描述： | FM radio circuit for MTS |
| 文件： | 总13页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA7021T
FM radio circuit for MTS
May 1992
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
GENERAL DESCRIPTION
The TDA7021T integrated radio receiver circuit is for portable radios, stereo as well as mono, where a minimum of
periphery is important in terms of small dimensions and low cost. It is fully compatible for applications using the
low-voltage micro tuning system (MTS). The IC has a frequency locked loop (FLL) system with an intermediate frequency
of 76 kHz. The selectivity is obtained by active RC filters. The only function to be tuned is the resonant frequency of the
oscillator. Interstation noise as well as noise from receiving weak signals is reduced by a correlation mute system.
Special precautions have been taken to meet local oscillator radiation requirements. Because of the low intermediate
frequency, low pass filtering of the MUX signal is required to avoid noise when receiving stereo. 50 kHz roll-off
compensation, needed because of the low pass characteristic of the FLL, is performed by the integrated LF amplifier.
For mono application this amplifier can be used to directly drive an earphone. The field-strength detector enables
field-strength dependent channel separation control.
Features
• Loop amplifier
• RF input stage
• Mixer
• Internal reference circuit
• LF amplifier for
• Local oscillator
• IF amplifier/limiter
• Frequency detector
• Mute circuit
− mono earphone amplifier or
− MUX filter
• Field-strength dependent channel separation control
facility
• MTS compatible
QUICK REFERENCE DATA
PARAMETER
CONDITIONS
SYMBOL MIN.
TYP.
MAX.
6,0
UNIT
Supply voltage (pin 4)
Supply current
V = V
1,8
−
−
V
P
4-3
V = 3 V
l
6,3
−
mA
P
4
RF input frequency
Sensitivity (e.m.f.) for
−3 dB limiting
f
1,5
−
110
MHz
rf
source impedance = 75 Ω;
mute disabled
EMF
EMF
−
−
−
4
−
−
−
µV
Signal handling (e.m.f.)
AF output voltage
source impedance = 75 Ω
200
90
mV
mV
V
o
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO 16; SOT109A); SOT109-1; 1996 July 24.
May 1992
2
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Fig.1 Block diagram.
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER
Supply voltage (pin 4)
CONDITIONS
SYMBOL
MIN.
MAX.
7,0
UNIT
V = V
−
V
P
4-3
Oscillator voltage
V
V −0,5
V + 0,5
V
5-4
stg
P
P
Storage temperature range
Operating ambient temperature range
T
T
−55
−10
+150
+70
°C
°C
amb
THERMAL RESISTANCE
From junction to ambient
R
300 K/W
th j-a
DC CHARACTERISTICS
V = 3 V, T
= 25 °C, measured in circuit of Fig.4, unless otherwise specified
amb
P
PARAMETER
CONDITIONS
SYMBOL
V = V
MIN.
1,8
TYP.
MAX.
6,0
UNIT
Supply voltage (pin 4)
Supply current
3,0
6,3
250
0,9
1,3
V
P
4-3
V = 3 V
I
I
−
−
−
−
−
−
−
−
mA
µA
V
P
4
Oscillator current
Voltage at pin 13
5
V
V
13-3
Output voltage (pin 14)
V
14-3
Fig.2 Supply current as a function of the supply voltage.
May 1992
4
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
AC CHARACTERISTICS (MONO OPERATION)
V = 3 V; T
= 25 °C; measured in Fig.5; f = 96 MHz modulated with ∆f = ±22,5 kHz; f = 1 kHz; EMF = 0,3 mV
rf m
P
amb
(e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless
otherwise specified
PARAMETER
Sensitivity (e.m.f.)
CONDITIONS
see Fig.3
SYMBOL
MIN.
TYP.
MAX.
UNIT
for −3 dB limiting
for −3 dB muting
muting disabled
EMF
−
−
−
4,0
−
µV
EMF
EMF
5,0
7,0
−
−
µV
µV
for (S+N)/N = 26 dB
Signal handling (e.m.f.)
THD < 10%;
∆f = ± 75 kHz
EMF
−
−
−
−
200
60
−
−
−
−
mV
dB
%
Signal-to-noise ratio
(S+N)/N
THD
Total harmonic distortion
∆f = ± 22,5 kHz
∆f = ± 75 kHz
0,7
2,3
THD
%
AM suppression of output
voltage
ratio of AM signal
(f = 1 kHz; m = 80%)
m
to FM signal (f =
m
1 kHz; ∆f = 75 kHz)
AMS
RR
−
50
−
dB
Ripple rejection
∆V = 100 mV;
P
f = 1 kHz
−
−
30
−
−
dB
Oscillator voltage (r.m.s. value)
Variation of oscillator frequency
with temperature
V
250
mV
5-4(rms)
V = 1 V
−
5
−
kHz/°C
∆fosc
P
----------------
∆Tamb
Selectivity
see Fig.9;
no modulation
S
S
−
−
−
−
46
−
−
−
−
dB
+300
30
dB
−300
AFC range
±∆f
±∆f
160
120
kHz
kHz
rf
rf
Mute range
Audio bandwidth
∆V = 3 dB;
o
measured with 50 µs
pre-emphasis
B
−
−
10
90
−
−
kHz
mV
AF output voltage
(r.m.s. value)
R (pin 14) = 100 Ω
V
o(rms)
L
AF output current
max. d.c. load
I
I
−100
−
+100
µA
o(dc)
max. a.c. load (peak value)
THD = 10%
−
3
−
mA
o(ac)
May 1992
5
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
Fig.3 Field strength voltage (V ) at R
= 1 kΩ; f = 96,75 MHz; V = 3 V.
P
9-3
source
Fig.4 Mono operation: AF output voltage (V ) and total harmonic distortion (THD) as functions of input e.m.f.
o
(EMF); R
= 75 Ω; f = 96 MHz; 0 dB = 90 mV. For S+N and noise curves (1) is with muting enabled
source
rf
and (2) is with muting disabled; signal ∆f = ± 22,5 kHz and f = 1 kHz. For THD curve, ∆f = ± 75 kHz and
m
f
= 1 kHz.
m
May 1992
6
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
1) The AF output can be decreased by disconnecting the 100 nF capacitor from pin 16.
Fig.5 Test circuit for mono operation.
AC CHARACTERISTICS (STEREO OPERATION)
V = 3 V; T = 25 °C; measured in Fig.8; f = 96 MHz modulated with pilot ∆f = ± 6,75 kHz and AF signal
P
amb
rf
∆f = ±22,5 kHz; f = 1 kHz; EMF = 1 mV (e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured
m
unweighted (f = 300 Hz to 20 kHz); unless otherwise specified
PARAMETER
Sensitivity (e.m.f.)
CONDITIONS
SYMBOL MIN.
TYP. MAX. UNIT
for (S+N)/N = 26 dB
see Fig.8; pilot off
see Fig.9; no modulation
EMF
−
−
−
−
11
40
22
50
−
−
−
−
µV
dB
dB
dB
Selectivity
S
S
+300
−300
Signal-to-noise ratio
Channel separation
(S+N)/N
V = L-signal; f = 1 kHz; pilot on:
i
m
at f = 97 MHz
α
α
−
−
26
14
−
−
dB
dB
rf
at f = 87,5 MHz and 108 MHz
rf
May 1992
7
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
Fig.6 Stereo operation: signal/noise and channel separation of TDA7021T when used in the circuit of Fig.8.
Fig.7 Stereo operation: channel separation as a function of audio frequency in the circuit of Fig.8.
May 1992
8
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
Fig.8 Stereo application in combination with a low voltage PLL stereo decoder (TDA7040T) and a low voltage
mono/stereo power amplifier (TDA7050T).
May 1992
9
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
Fig.9 Test set-up; V = 30 mV; f = 76 kHz; selective voltmeter at output has R ≥ 1 MΩ and C ≤ 8 pF; f = f .
i
i
i
i
o
i
Note to Fig. 9
This test set-up is to incorporate the circuit of Fig.5 for mono operation or the circuit of Fig.8 for stereo operation.
For either circuit, replace the 100 nF capacitor at pin 6 with R6 (100 kΩ) as shown above.
Selectivity
V | (300 kHz − f )
V | (300 kHz + f )
o i
o
i
S
= 20 log
S
= 20 log
+300
−300
V | f
V | f
o i
o
i
May 1992
10
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT109-1
076E07S
MS-012AC
May 1992
11
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
May 1992
12
Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
May 1992
13
相关型号：
TDA7040T/V2,112
IC SPECIALTY CONSUMER CIRCUIT, PDSO8, PLASTIC, SOT-96A, SOP-8, Consumer IC:Other
NXP
©2020 ICPDF网 联系我们和版权申明