TDA8012AM-T [NXP]
IC SPECIALTY TELECOM CIRCUIT, PDSO20, PLASTIC, SOT-266, SSOP-20, Telecom IC:Other;
| 型号： | TDA8012AM-T |
| 厂家： | 
NXP |
| 描述： | IC SPECIALTY TELECOM CIRCUIT, PDSO20, PLASTIC, SOT-266, SSOP-20, Telecom IC:Other 电信 光电二极管 电信集成电路 |
| 文件： | 总16页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8012AM
Low power PLL FM demodulator for
satellite TV receivers
1997 May 26
Product specification
File under Integrated Circuits, IC02
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
FEATURES
GENERAL DESCRIPTION
• High input sensitivity
The TDA8012AM is a sensitive Phase Locked Loop (PLL)
Frequency Modulation (FM) demodulator for the second
Intermediate Frequency (IF) in satellite receivers.
It provides Automatic Gain Control (AGC) and Automatic
Frequency Control (AFC) outputs that can be used to
optimize the level and the frequency of the signal applied
at the input. During the search procedure, the AFC output
provides a signal used for carrier detection.
• Fully balanced two-pin Voltage Controlled Oscillator
(VCO)
• Low input impedance (50 Ω)
• Low impedance video baseband output
• Internal voltage stabilizer
• Keyed Automatic Frequency Control (AFC) or peak AFC
• Carrier detector
• Automatic Gain Control (AGC) output.
APPLICATIONS
• Digital Broadcast System (DBS) satellite receivers.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
4.75
TYP.
5.0
MAX.
5.25
60
UNIT
V
ICC
Vi
supply current
VCC = 5 V; Tamb = 25 °C
40
53
−
50
57
480
1
mA
input level
61
dBµV
MHz
V
fc
operating carrier frequency
−
Vo(p-p)
video output signal amplitude
(peak-to-peak value)
frequency deviation = 25 MHz
−
−
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8012AM
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1997 May 26
2
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
BLOCK DIAGRAM
CARRIER
DETECTOR
1
2
CDF1
CDF2
20
AFCOS
AFC
19
18
AFC/CDO
KEY
17
3
4
AFCF
+
−
PD
PD
5
6
16
IFI1
IFI2
VCO2
VCO1
VCO
15
14
OSCGND
7
8
GND
STABILIZER
V
CC
13
12
11
LF2
LF1
AGC
9
VIDEO
AGCO
TDA8012AM
10
V
VIDEO BUFFER
th(AGC)
MBH934
Fig.1 Block diagram.
1997 May 26
3
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
PINNING
SYMBOL
PIN
DESCRIPTION
CDF1
CDF2
PD+
1
2
carrier detector filter 1 input
carrier detector filter 2 input
positive peak detector output
negative peak detector output
intermediate frequency input 1
intermediate frequency input 2
general ground
3
PD−
4
IFI1
5
handbook, halfpage
IFI2
6
CDF1
CDF2
1
2
20 AFCOS
GND
VCC
7
19 AFC/CDO
8
supply voltage
+
PD
KEY
18
3
AGCO
Vth(AGC)
9
automatic gain control output
−
4
17 AFCF
PD
10
automatic gain control threshold
voltage input
IFI1
IFI2
VCO2
5
16
15
14
TDA8012AM
VIDEO
LF1
11
12
13
14
15
16
17
baseband signal output
loop filter 1 input
6
VCO1
OSCGND
GND
7
LF2
loop filter 2 input
V
8
13 LF2
LF1
CC
OSCGND
VCO1
VCO2
AFCF
oscillator ground
AGCO
9
12
11 VIDEO
oscillator tank circuit 1 input
oscillator tank circuit 2 input
V
10
th(AGC)
MBH931
automatic frequency control filter
input
KEY
18
19
key pulse input
AFC/CDO
automatic frequency control
/carrier detector output
AFCOS
20
automatic frequency control offset
input
Fig.2 Pin configuration.
The circuit provides an AGC signal which is used to drive
a gain-controlled IF amplifier (TDA8011T or TDA8010AM)
for a stable PLL demodulation characteristic.
FUNCTIONAL DESCRIPTION
The TDA8012AM is a low power PLL FM demodulator
designed for use in satellite TV reception systems.
An analog AFC voltage is available. This signal fits in with
the input of the A/D converter port of the PLL frequency
synthesizer (TSA5055). The AFC function may be keyed
to address D2MAC systems.
The demodulator is based on a PLL structure including a
fully balanced two-pin VCO. A high gain IF amplifier
ensures a high input sensitivity. The video output voltage
is supplied through a highly-linear video buffer with a low
output impedance. The centre frequency of the VCO and
the loop characteristics can be set by external components
(see Fig.4).
The TDA8012AM includes a Carrier Detector (CD) used
for channel detection during search procedures.
1997 May 26
4
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
−0.3
MAX.
+6.0
UNIT
VCC
supply voltage
V
V
VI(max)
IO(max)
tsc(max)
ZL
voltage on all pins
output source current
−0.3
−
VCC
10
mA
s
maximum short-circuit time on outputs
AC load impedance at video output
IC storage temperature
−
10
600
−55
−
−
Ω
Tstg
+150
150
+80
°C
°C
°C
Tj
junction temperature
Tamb
operating ambient temperature
−10
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
120
K/W
1997 May 26
5
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
CHARACTERISTICS
Measured in the application circuit (see Fig.4) with the following conditions: VCC = 5 V, Tamb = 25 °C, fc = 480 MHz,
input level: 57 dBµV; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
ICC
supply voltage
supply current
4.75
5.0
5.25
60
V
note 1
40
50
mA
Voltage controlled oscillator
KVCO
VCO constant
4.75 < VCC < 5.25 V;
20
25
30
MHz/V
−10 < Tamb < 80 °C
VCO frequency temperature dependence note 2
−
−
1
2.5
MHz
kHz
∆fVCO(drift)
∆fVCO(shift) VCO frequency voltage dependence
4.75 < VCC < 5.25 V
±300
±750
Frequency demodulator
Vi
fc
operating input level
optimal operating carrier frequency
input impedance
resistive part
note 3
note 4
53
57
61
dBµV
−
480
−
MHz
Zi
−
−
−
50
−
−
−
Ω
inductive part
100
0.42
nH
KD
LG
phase detector constant
PLL loop gain
Vi = 57 dBµV
V/rad
note 5
drift
−
2
−
dB
dB
kΩ
shift
−
2
−
Zo
differential output impedance of the
phase detector
1.8
2.3
2.8
fcr(PLL)
DG
PLL capture range
note 6
note 7
note 7
note 8
note 9
±20
−
±26
±2
±2
−
−
−
−
−
−
MHz
%
differential gain
DP
differential phase
−
deg
dB
IM3
IM2
third-order intermodulation distortion
second-order intermodulation distortion
47
45
−
dB
Video output
Vo(p-p)
baseband signal amplitude
frequency
0.8
1.0
1.2
V
(peak-to-peak value)
deviation = 25 MHz
VO
DC voltage level of video output
output impedance
2.1
−
2.35
75
2.6
−
V
Zo
Ω
S/N
SAM
weighted baseband signal-to-noise ratio note 10
Amplitude Modulation (AM) sensitivity note 11
58
−
61
−
dB
dB
30
−
1997 May 26
6
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
SYMBOL
Automatic gain control (note 12)
THAGC automatic gain control threshold as a
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IAGCO = 0.5 mA;
V10 = 0.1VCC
AGCO = 0.5 mA;
10 = 0.9VCC
−
−
−
53
dBµV
dBµV
dBµV
function of the voltage applied to pin 10
I
V
61
−
−
note 13
Vth(AGC) (pin 10) not
connected
−
57
LD
level detector
shift
V
CC = 4.75 to 5.25 V
−
−
−
−
1
−
dB
drift
T
amb = −10 to +80 °C
1
−
dB
SAGC
automatic gain control steepness
IAGCO = 0.5 mA; note 14
IAGCO = 1 mA
8
−
mA/dB
mV
Vsat(AGC)
low level automatic gain control output
saturation voltage
200
500
Keying pulse
tkey
tW(key)
VIL
input keyed pulse time period
−
64
−
−
µs
µs
V
keyed pulse width
8
−
LOW level input keyed pulse voltage
HIGH level input keyed pulse voltage
input impedance
key on
key off
−
−
0.8
−
VIH
Zi
3.0
1
−
V
10
−
kΩ
AFC and carrier detector output (note 15)
IL(pd)
peak detector leakage current
note 16
50
150
5.5
250
6.5
nA
automatic frequency control steepness
with unmodulated input signal
4.5
V/MHz
∆VAFC
----------------
∆f
∆fAFC(shift) shift of automatic frequency control
voltage with respect to fVCO with
∆VCC = ±5%
−
−
±180
−1.1
±500
kHz
unmodulated 480 MHz input signal
∆fAFC drift)
(
drift of automatic frequency control
voltage with respect to fVCO
Tamb = 80 °C; note 17
−
MHz
Notes
1. The DC supply current is measured with VCC = 5 V.
2. The VCO frequency drift is defined as the change in oscillator frequency for a variation of ambient temperature, on
the one hand from Tamb = 25 °C to Tamb = 0 °C and on the other hand from Tamb = 25 °C to Tamb = 50 °C. It is
measured in the application of Fig.4 with the following component values for the tank circuit:
Coil: 2.5 turns; diameter 2 mm; adjustable.
Capacitor: miniature ceramic plate capacitor NP0, 3.3 pF.
3. The circuit is designed for an input level of 57 dBµV. The maximum allowable input level for the PLL design is
61 dBµV. However, for levels different from 57 dBµV, the optimum loop filter values will be different from those given
for the 57 dBµV input level in the reference measuring set-up.
4. The input impedance is reduced to a resistor with a parallel reactance. The values are given at 480 MHz. In order to
reduce the radiation from the oscillator to the RF input, it is recommended to use a symmetrical drive.
5. The PLL loop gain shift and drift are given without loop filter shift and drift (non-temperature compensated external
components).
1997 May 26
7
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
6. The capture range or lock-in range is defined as the range where the PLL gets in lock. This value depends strongly
on the loop filter characteristics.
7. Measurements with test signals in accordance with CCIR recommendation 473-3;
FM modulated signal with DBS parameters:
a) 625 lines PAL TV system
b) 16 MHz/V modulator sensitivity
c) 1 V (p-p) video signal
d) No SAW filter is used.
8. No SAW filter is used at the input:
a) 16 MHz/V modulator sensitivity
b) 4.43 MHz sine wave colour signal (660 mV (p-p))
c) 3.25 MHz sine wave luminance signal (700 mV (p-p))
d) CCIR pre-emphasis
e) Intermodulation distance is defined as the distance between the luminance signal and the intermodulation
products.The video output spectrum is measured on pin 11 (point A of Fig.4) with a high resistance probe.
The de-emphasis figure is obtained from the measured data by calculation.
9. No SAW filter is used at the input:
a) 16 MHz/V modulator sensitivity
b) Two sound carriers at 7.02 MHz and 7.20 MHz; 4 MHz deviation
c) Intermodulation measurement without pre-emphasis
d) Intermodulation distance is defined as the distance between one of the sound carriers and the intermodulation
products
e) The video output spectrum is measured on pin 11 (point A of Fig.4) with a high resistance probe and a spectrum
analyser.
10. Measurements are made under the following conditions
a) FM modulator video signal
b) Amplitude level: 57 dBµV
c) Frequency: 479.5 MHz
d) Frequency deviation: 16 MHz
e) CCIR pre-emphasis + unified weighting filter
f) C/N > 50 dB
S/N is measured after de-emphasis with a baseband spectrum from 200 kHz to 5 MHz.
11. The AM sensitivity is defined as the ratio of the baseband output signals obtained from either an AM or FM modulated
RF input signal.
Vo(FM)
SAM = 20 log
---------------
Vo(AM)
FM modulated signal: fc = 480 MHz, frequency deviation = 25 kHz, modulation frequency = 20 kHz, input
level = 57 dBµV
AM modulated signal: fc = 480 MHz, modulation depth = 50%, modulation frequency = 20 kHz, input
level = 57 dBµV.
12. The characteristics of the AGC function are measured in the application circuit of Fig.4. The circuit illustrated in Fig.4
has been designed to set the maximum AGC current to 1 mA. The output of the AGC function is capable of handling
up to 5 mA. The maximum AGC current can be increased to 5 mA by decreasing the value of the resistor connected
between pins 8 and 9.
1997 May 26
8
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
13. For applications in which a fixed AGC threshold is used, it is recommended to use the internal resistor voltage divider
for lower AGC threshold spread. In this case, the threshold is set to 57 dBµV.
14. In the application circuit (see Fig.4) the voltage at the AGC output decreases when the IF input level increases above
the adjusted AGC threshold.
15. The outputs from the AFC and carrier detector are combined at pin 19 (see Fig.3). During search tuning, when the
input frequency is outside the capture range, the combined output (carrier detector function) is at a LOW level
(any voltage below 0.6VCC). When the PLL becomes locked, the voltage at pin 19 rises to a HIGH level
(V19 = 0.8VCC to VCC). When the input channel is close to the centre frequency, V19 falls to the LOW level. As shown
in Fig.3, the voltage at pin 19 is now a function of the centre frequency (AFC function). This information may be read
by a microcontroller via the ADC of the satellite frequency synthesizer (TSA5055) and the I2C-bus.
16. This current discharges the external capacitors between two energy dispersal peak values and avoid the use of
external resistors in parallel with capacitors.
17. The drift of the automatic frequency control voltage is measured in accordance with the following method:
a) At room temperature (Tamb = 25 °C) the TDA8012AM is driven by a 480 MHz unmodulated signal. The voltage at
pin 20 must be adjusted to obtain a 1.5 V output at the AFC output (pin 19).
b) At Tamb = 80 °C, due to its temperature drift, the AFC output voltage differs from 1.5 V. The input frequency must
be adjusted to obtain 1.5 V at the AFC output. Then the VCO frequency fVCO is measured in free running mode
(without input signal). The drift of the automatic frequency control voltage will then be equal to the difference
between the input frequency and fVCO
.
MBH932
V
V
19
CC
1
carrier detect on
0.8
0.6
0.45
0.3
AFC DATA
frequency
0.15
0
f
o
500 kHz
Fig.3 AFC and carrier detector output.
1997 May 26
9
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
APPLICATION INFORMATION
CARRIER
DETECTOR
1 µF
1
V
CC
82 kΩ
2.7 MΩ
2
20
4.7 kΩ
AFC
19
18
AFC/CDO
22 µF
10
kΩ
330 nF
3
17
330 nF
4
KEY
220 pF
10 nF
5
16
15
intermediate
frequency
(1)
VCO
3.3 pF
6
input
10 nF
14
7
8.2 pF
STABILIZER
8
2.7
kΩ
V
CC
1 nF
13
12
1.5 kΩ
47
µF
4.7
kΩ
AGC
+
15 V
9
AGCO
330 Ω
(2)
T1
10
V
11
TDA8012AM
th(AGC)
(2)
330 nF
T2
75 Ω
A
1 nF
VIDEO BUFFER
video
MBH933
680
Ω
15 kΩ
470 µF
−
15 V
(1) 2.5 turns; diameter 2.0 mm.
(2) T1, T2 = BC547B.
Fig.4 Application circuit.
1997 May 26
10
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.25
0.65
1.0
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1997 May 26
11
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1997 May 26
12
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 26
13
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
NOTES
1997 May 26
14
Philips Semiconductors
Product specification
Low power PLL FM demodulator for
satellite TV receivers
TDA8012AM
NOTES
1997 May 26
15
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Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Indonesia: see Singapore
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547047/1200/01/pp16
Date of release: 1997 May 26
Document order number: 9397 750 01589
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