TDA8559T [NXP]
Low-voltage stereo headphone amplifier; 低电压立体声耳机放大器器
| 型号： | TDA8559T |
| 厂家： | 
NXP |
| 描述： | Low-voltage stereo headphone amplifier |
| 文件： | 总32页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8559
Low-voltage stereo headphone
amplifier
1997 Jun 27
Product specification
Supersedes data of 1996 Jan 02
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
FEATURES
APPLICATIONS
• Operating voltage from 1.9 to 30 V
• Very low quiescent current
• Low distortion
• Portable telephones
• Walk-mans
• Portable audio
• Few external components
• Differential inputs
• Mains fed equipment.
GENERAL DESCRIPTION
• Usable as a mono amplifier in Bridge-Tied Load (BTL) or
stereo Single-Ended (SE)
The TDA8559 is a stereo amplifier that operates over a
wide supply voltage range from 1.9 to 30 V and consumes
a very low quiescent current. This makes it suitable for
battery fed applications (2 × 1.5 V cells). Because of an
internal voltage buffer, this device can be used with or
without a capacitor connected in series with the load. It can
be applied as a headphone amplifier, but also as a mono
amplifier with a small speaker (25 Ω), or as a line driver in
mains applications.
• Single-ended mode without loudspeaker capacitor
• Mute and standby mode
• Short-circuit proof to ground, to supply voltage (<10 V)
and across load
• No switch on or switch off clicks
• ESD protected on all pins.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
VP
operating supply voltage
total quiescent current
standby supply current
1.9
3
30
V
Iq(tot)
Istb
−
−
2.75
4
mA
−
10
µA
Stereo application
Po
output power
THD = 10%
30
−
35
−
mW
%
THD
total harmonic distortion
Po = 20 mW; fi = 1 kHz
Po = 20 mW; fi = 10 kHz
0.075
0.1
0.15
−
−
%
Gv
fss
voltage gain
25
−
26
27
−
dB
kHz
small signal roll-off frequency
−1 dB
750
BTL application
Po
output power
THD = 10%
125
−
140
0.05
0.2
−
mW
%
THD
total harmonic distortion
Po = 70 mW; fi = 1 kHz
Po = 70 mW; fi = 10 kHz
0.1
−
−
%
Gv
voltage gain
31
32
33
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
SOT38-1
SOT109-1
TDA8559
DIP16
SO16
plastic dual in-line package; 16 leads (300 mil); long body
plastic small outline package; 16 leads; body width 3.9 mm
TDA8559T
1997 Jun 27
2
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
BLOCK DIAGRAM
V
V
P1
P2
15
16
1
REFERENCE
STANDBY
V
P
2
3
50 kΩ
+
+IN1
−IN1
−
V/I
14
−
OA
OUT1
+
50 kΩ
50 kΩ
7
8
DQC
MUTE
MODE
INPUT
LOGIC
+
−
5
6
11
+
+IN2
−IN2
OUT2
OA
V/I
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
12
4
BUFFER
BUFFER
SVRR
100
kΩ
TDA8559
9,10
13
MGD115
n.c.
GND
Fig.1 Block diagram.
3
1997 Jun 27
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
PINNING
SYMBOL
PIN
DESCRIPTION
standby select
STANDBY
+IN1
1
2
non-inverting input 1
inverting input 1
supply voltage ripple rejection
non-inverting input 2
inverting input 2
mute select
handbook, halfpage
STANDBY
1
2
3
4
5
6
7
8
16
15
V
−IN1
3
P1
SVRR
+IN2
4
+IN1
−IN1
V
P2
5
14 OUT1
13 GND
−IN2
6
SVRR
+IN2
TDA8559
MUTE
MODE
n.c.
7
12 BUFFER
11 OUT2
10 n.c.
8
input mode select
not connected
−IN2
9
MUTE
MODE
n.c.
10
11
12
13
14
15
16
not connected
9
n.c.
OUT2
BUFFER
GND
output 2
MGD114
buffer output (0.5VP)
ground
OUT1
VP2
output 1
high supply voltage
low supply voltage
Fig.2 Pin configuration.
VP1
FUNCTIONAL DESCRIPTION
V/I converters
The TDA8559 contains two amplifiers with differential
inputs, a 0.5VP output buffer and a high supply voltage
stabilizer. Each amplifier consists of a voltage-to-current
converter (V/I), an output amplifier and a common dynamic
quiescent current controller. The gain of each amplifier is
internally fixed at 26 dB (= 20 ×). The 0.5VP output can be
used as a replacement for the single-ended capacitors.
The two amplifiers can also be used as a mono amplifier in
a BTL configuration thereby resulting in more output
power.
The V/I converters have a transconductance of 400 µS.
The inputs are completely symmetrical and the two
amplifiers can be used in opposite phase. The mute mode
causes the V/I converters to block the input signal.
The input mode pin selects two applications in which the
V/I converters can be used.
The first application (input mode pin floating) is used with
a supply voltage below 6 V. The input DC level is at ground
level (the unused input pin connected to ground) and no
input coupling capacitors are necessary. The maximum
converter output current is sufficient to obtain an output
swing of 3 V (peak).
With three mode select pins, the device can be switched
into the following modes:
1. Standby mode (IP < 10 µA)
In the second application with a supply voltage greater
than 6 V (input mode pin HIGH), the input mode pin is
connected to VP. In this configuration (input DC
level = 0.5VP + 0.6 V) the input source must be coupled
with a capacitor and the two unused input pins must be
connected via a capacitor to ground, to improve noise
performance. This application has a higher quiescent
current, because the maximum output current of the V/I
converter is higher to obtain an output voltage swing of
9 V (peak).
2. Mute mode
3. Operation mode, with two input selections (the input
source is directly connected or connected via coupling
capacitors at the input).
The ripple rejection in the stereo application with a
single-ended capacitor can be improved by connecting a
capacitor between the 0.5VP capacitor pin and ground.
The device is fully protected against short-circuiting of the
output pins to ground, to the low supply voltage pin and
across the load.
1997 Jun 27
4
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
Output amplifiers
Stabilizer
The TDA8559 has a voltage supply range from
The output amplifiers have a transresistance of 50 kΩ, a
bandwidth of approximately 750 kHz and a maximum
output current of 100 mA. The mid-tap output voltage
equals the voltage applied at the non-inverting pin of the
output amplifier. This pin is connected to the output of the
0.5VP buffer. This reduces the distortion when the load is
connected between an output amplifier and the buffer
(because feedback is applied over the load).
1.9 to 30 V. This range is divided over two supply voltage
pins. Pin 16 is 1.9 to 18 V (breakdown voltage of the
process); this pin is preferred for supply voltages less than
18 V. Pin 15 is used for applications where VP is
approximately 6 to 30 V. The stabilizer output is internally
connected to the supply voltage pin 16. In the range from
6 to 18 V, the voltage drop to pin 16 is 1 V. In the range
from 18 to 30 V the stabilizer output voltage (to pin 16) is
approximately 17 V.
Buffer
The buffer delivers 0.5VP to the output with a maximum
output (sink and source) current of 200 mA (peak).
Input logic
The MUTE pin (pin 7) selects the mute mode of the V/I
converters. LOW (TTL/CMOS) level is mute. A voltage
between 0.5 V (low level) and 1.5 V (high level) causes a
soft mute to operate (no plops). When pin 7 is floating or
greater than 1.5 V it is in the operating condition.
Dynamic quiescent controller
The Dynamic Quiescent Current controller (DQC) gives
the advantage of low quiescent current and low distortion.
When there are high frequencies in the output signal, the
DQC will increase the quiescent current of the two output
amplifiers and the buffer. This will reduce the cross-over
distortion that normally occurs at high frequencies and low
quiescent current. The DQC gives output currents that are
linear with the amplitude and the frequency of the output
signals. These currents control the quiescent current.
The input mode pin must be connected to VP when the
supply voltage is greater than 6 V. The input mode logic
raises the tail current of the V/I converters and enables the
two buffers to bias the inputs of the V/I converters.
Reference
This circuit supplies all currents needed in this device. With
the standby mode pin 1 (TTL/CMOS), it is possible to
switch to the standby mode and reduce the total quiescent
current to below 10 µA.
1997 Jun 27
5
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
maximum supply voltage (pin 15)
maximum supply voltage (pin 16)
maximum input voltage
CONDITIONS
MIN.
MAX.
UNIT
VP2(max)
VP1(max)
Vi(max)
IORM
−
−
−
−
−
−
30
18
18
V
V
V
peak output current
repetitive
150
1.19
2.4
mA
W
Ptot
total power dissipation
SO16
DIP16
W
Tamb
Tstg
Tvj
operating ambient temperature
storage temperature
−40
−55
−
+85
+150
150
1
°C
°C
virtual junction temperature
short-circuiting time
°C
tsc
VP < 10 V
−
hour
QUALITY SPECIFICATION
Quality in accordance with “SNW-FQ-611E”, if this type is used as an audio amplifier. The number of the quality
specification can be found in the “Quality Reference handbook”. The handbook can be ordered using the code
9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
DESCRIPTION
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
DIP16
SO16
52
K/W
K/W
105
CHARACTERISTICS
VP = 3 V; Tamb = 25 °C; fi = 1 kHz; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
VP
operating supply voltage
total quiescent current
standby supply current
standby mode voltage
note 1
1.9
−
3
30
4
V
Iq(tot)
Istb
V1
open load
open load
standby
operating
mute
2.75
−
mA
µA
V
−
10
0.5
18
0.5
18
300
0
−
1.5
0
−
V
V7
mute mode voltage
input bias current
−
V
operating
1.5
−
−
V
Ibias
100
nA
1997 Jun 27
6
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Single-ended stereo application (RL = 32 Ω)
Po
output power
THD = 10%
30
35
−
mW
THD
total harmonic distortion
Po = 20 mW; fi = 1 kHz; note 2
Po = 20 mW; fi = 10 kHz; note 2
−
0.075
0.1
26
750
−
0.15
−
%
−
%
Gv
voltage gain
25
−
27
−
dB
kHz
dB
dB
µV
µV
µV
V
fss
small signal roll-off frequency
channel separation
−1 dB
αcs
Rs = 5 kΩ
40
−
−
∆Gv
Vno
channel unbalance
−
1
noise output voltage
noise output voltage in mute
output voltage in mute
mid-tap voltage
note 3
note 3
note 4
−
70
20
−
85
30
30
1.6
125
100
−
Vno(mute)
Vo(mute)
Vmt
−
−
1.4
75
−
1.5
100
−
Zi
input impedance
kΩ
mV
dB
Vos
DC output offset voltage
supply voltage ripple rejection
note 5
note 6
SVRR
45
55
BTL application (RL = 25 Ω)
Po
output power
THD = 10%
125
−
140
0.05
0.1
32
−
mW
%
THD
total harmonic distortion
Po = 70 mW; fi = 1 kHz; note
Po = 70 mW; fi = 10 kHz; note 2
0.1
−
−
%
Gv
voltage gain
31
−
33
−
dB
kHz
µV
µV
µV
mv
dB
kΩ
fss
small signal roll-off frequency
noise output voltage
−1 dB
note 3
note 3
note 4
note 7
note 6
750
100
25
Vno
−
120
40
40
150
−
Vno(mute)
Vo(mute)
Vos
noise output voltage in mute
output voltage in mute
DC output offset voltage
supply voltage ripple rejection
input impedance
−
−
−
−
−
SVRR
Zi
39
39
49
50
61
Line driver application (RL ≥ 1 kΩ)
Vo
line output voltage
0.1
−
2.9
V
Notes
1. The supply voltage range at pin VP1 is from 1.9 to 18 V. Pin VP2 is used for the voltage range from 6 to 30 V.
2. Measured with low-pass filter 30 kHz.
3. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz, unweighted. Rs = 5 kΩ.
4. RMS output voltage in mute is measured with Vi = 200 mV (RMS); f = 1 kHz.
5. DC output offset voltage is measured between the signal output and the 0.5VP output.
6. The ripple rejection is measured with a ripple voltage of 200 mV (RMS) applied to the positive supply rail (Rs = 0 kΩ).
7. DC output offset voltage is measured between the two signal outputs.
1997 Jun 27
7
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
APPLICATION INFORMATION
General
Test conditions
Tamb = 25 °C; unless otherwise specified: VP = 3 V,
f = 1 kHz, RL = 32 Ω, Gain = 26 dB, low input mode,
band-pass filter: 22 Hz to 30 kHz. The total harmonic
distortion as a function of frequency was measured with
low-pass filter of 80 kHz. The quiescent current has been
measured without any load impedance.
For applications with a maximum supply voltage of 6 V
(input mode LOW) the input pins need a DC path to ground
(see Figs 3 and 4). For applications with supply voltages in
the range from 6 to 18 V (input mode HIGH) the input DC
level is 0.5VP + 0.6 V. In this situation the input
In applications with coupling capacitors towards the load,
an electrolytic capacitor has to be connected to pin 4
(SVRR).
configurations illustrated in Figs 5 and 6 have to be used.
The capacitor Cb is recommended for stability
improvement. The value may vary between
10 and 100 nF. This capacitor should be placed close to
the IC between pin 12 and pin 13.
• The graphs for the single-ended application have been
measured with the application illustrated in Fig.9; input
configuration for input mode low (Fig.4) and input
configuration for input mode high (Fig.6).
Heatsink design
• The graphs for the BTL application ‘input mode low’
have been measured with the application circuit
illustrated in Fig.11 and the input configuration
illustrated in Fig.4.
The standard application is stereo headphone
single-ended with a 32 Ω load impedance to buffer
(see Fig.9). The headphone amplifier can deliver a peak
output current of 150 mA into the load.
• The graphs for the line-driver application have been
measured with the application circuit illustrated in Fig.13
and the input configuration illustrated in Fig.6; input
mode high.
For the DIP16 envelope Rth j-amb = 52 K/W; the maximum
sine wave power dissipation for Tamb = 25 °C is:
150 – 25
2.4 W =
----------------------
52
Input configurations
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
The IC can be applied in two ways, ‘input mode low’ and
‘input mode high’. This can be selected by the input mode
at pin 8:
1.7 W =
----------------------
52
For the SO16 envelope Rth j-amb = 105 K/W; the maximum
sinewave power dissipation for Tamb = 25 °C is:
1. Input mode low: pin 8 floating:
The DC level of the input pins has to be between 0 V
and (VP − 1.8 V). A DC path to ground is needed.
The maximum output voltage is approximately
2.1 V (RMS). Input configurations illustrated in
Figs 3 and 4 should be used.
150 – 25
105
1.2 W =
----------------------
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
0.85 W =
----------------------
105
2. Input mode high: pin 8 is connected to VP:
This mode is intended for supply voltages >6 V. It can
deliver a maximum output voltage of approximately
6 V (RMS) at THD = 0.5%. The DC voltage level of the
input pins is (0.5VP + 0.6 V). Coupling capacitors are
necessary. Input configurations illustrated in
Figs 5 and 6 should be used.
1997 Jun 27
8
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
2.2 µF
pins 2 and 5
INPUT
pins 2 and 5
INPUT
handbook, halfpage
V
IN
5 kΩ
V
IN
pins 3 and 6
pins 3 and 6
MGD124
MGD123
Fig.3 Input configuration; with input capacitor
Fig.4 Input configuration; without input capacitor
(VP < 6 V).
(VP < 6 V).
pin 2
100 nF
V
IN
220 nF
pin 3
pins 2 and 5
INPUT
V
IN
220 nF
220
pins 3 and 6
nF
pin 6
MGD125
V
IN
100 nF
pin 5
MGD126
Fig.6 Input configuration (at VP > 6 V, combined
Fig.5 Input configuration (VP > 6 V).
negative inputs).
Standby/mute
• The standby mode (V1 < 0.5 V) is intended for power
saving purpose. Then the total quiescent current is
<10 µA.
V
P
• To avoid ‘pop-noise’ during switch-on or switch-off the
IC can be muted (V7 < 0.5 V). This can be achieved by
a ‘soft-mute’ circuit or by direct control from a
microcontroller.
620 kΩ
7
47 kΩ
220 nF
mute
MGL135
Fig.7 Soft mute.
1997 Jun 27
9
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
Application 1: SE with loudspeaker capacitor
Application 6: Line driver application 6 V < VP < 18 V
(see Fig.8)
(see Fig.13)
The value of capacitor Cr influences the behaviour of the
Supply Voltage Ripple Rejection (SVRR) at low
frequencies; increasing the value of Cr increases the
performance of the SVRR.
The TDA8559T delivers a virtual rail-to-rail output voltage.
Because the input mode has to be high, the input
configurations illustrated in Figs 5 and 6 should be used.
This application can also be used for headphone
application, however, due to the limited output current and
the limited output power at the headphone, series resistors
have to be used between the output pins and the load.
Application 2: SE to buffer (without loudspeaker
capacitor) (see Fig.9)
The value of capacitor Cr influences the behaviour of the
SVRR at low frequencies; increasing the value of Cr
increases the performance of the SVRR.
This is the basic headphone application. The advantage of
this application with respect to application 1, is that it
needs only one external component (Cb) in the event of
stability problems.
Application 7: Line driver application 6V < VP < 30 V
Application 3: Improved SE to buffer (without
(see Fig.14)
loudspeaker capacitor) (see Fig.10)
With the supply voltage connected to pin 15 it is possible
to use the head amplifier above the maximum of 18 V to
pin 16. The internal supply voltage will be reduced to a
maximum of approximately 17 V.
This application is an improved configuration of
application 2. The distinction between the two is
connecting the loads in opposite phase. This lowers the
average current through the SE buffer.
It should be noted that a headphone cannot be used
because the load requires floating terminals.
This will be convenient in applications where the supply
voltage is higher than 18 V, however an output voltage
swing that reaches the higher supply voltage is not
required. the input configurations illustrated in
Figs 5 and 6 should be used. This application can also be
used for headphone applications. However, due to the
limited output current, series resistors have to be used
between the output pins and the load.
Application 4: Bridge tied load mono amplifier
(see Fig.11)
This configuration delivers four times the output power of
the SE application with the same supply and load
conditions. The capacitor Cr is not required.
Application 5: Line driver application 1.9 V < VP < 6 V
(see Fig.12)
The TDA8559 delivers a virtual rail-to-rail output voltage
and is also usable in a low voltage environment, as a line
driver. In this application the input needs a DC path to
ground, input configurations illustrated in Figs 3 and 4
should be used. The value of capacitor Cr influences the
behaviour of the SVRR at low frequencies; increasing the
value of Cr increases the performance of the SVRR.
1997 Jun 27
10
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
2
50 kΩ
+
−
+
IN1
V/I
+
−
OUT1
3
14
−
OA
220 µF
32 Ω
50 kΩ
50 kΩ
MUTE
7
8
DQC
INPUT
LOGIC
MODE
32 Ω
+
−
OUT2
11
5
6
+
OA
+
−
IN2
V/I
220 µF
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559
Cb
13
MGD116
GND
Fig.8 Application 1: single-ended with loudspeaker capacitor.
1997 Jun 27
11
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
2
50 kΩ
+
−
+
IN1
V/I
+
−
OUT1
3
14
−
OA
32 Ω
50 kΩ
50 kΩ
MUTE
7
8
DQC
INPUT
LOGIC
MODE
32 Ω
+
−
OUT2
11
5
6
+
OA
+
−
IN2
V/I
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559
Cb
13
MGD117
GND
Fig.9 Application 2: single-ended to buffer (without loudspeaker capacitor).
1997 Jun 27
12
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
2
50 kΩ
+
−
+
IN1
V/I
OUT1
3
14
−
OA
+
−
32 Ω
50 kΩ
50 kΩ
MUTE
7
8
DQC
INPUT
LOGIC
MODE
32 Ω
+
−
OUT2
11
5
6
+
OA
−
+
IN2
V/I
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559
Cb
13
MGD118
GND
Fig.10 Application 3: Improved single-ended to buffer (without loudspeaker capacitor).
1997 Jun 27
13
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
1
REFERENCE
V
P
2
50 kΩ
+
−
+
IN1
V/I
OUT1
3
14
−
OA
50 kΩ
50 kΩ
MUTE
7
8
25 Ω
DQC
INPUT
LOGIC
MODE
+
−
OUT2
11
5
6
+
OA
IN2
V/I
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
4
BUFFER
SVRR
100
kΩ
TDA8559
Cb
13
MGD119
GND
Fig.11 Application 4: BTL mono amplifier.
1997 Jun 27
14
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
2
50 kΩ
+
1 kΩ
−
+
IN1
V/I
OUT1
3
14
−
OA
10 µF
50 kΩ
50 kΩ
MUTE
7
8
DQC
INPUT
LOGIC
MODE
+
−
OUT2
11
5
6
+
OA
IN2
V/I
10 µF
1 kΩ
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559
Cb
13
MGD120
GND
Fig.12 Application 5: Line driver application (VP = 1.9 to 6 V).
1997 Jun 27
15
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
15
P1
100
nF
100 µF
16
STANDBY
1
REFERENCE
V
P
100 nF
2
50 kΩ
+
1 kΩ
IN1
V/I
3
−
+
OUT1
14
−
OA
10 µF
50 kΩ
50 kΩ
7
8
DQC
220
nF
INPUT
LOGIC
MUTE
MODE
+
−
OUT2
11
5
6
+
OA
IN2
100 nF
V/I
10 µF
1 kΩ
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
SVRR
4
BUFFER
100
kΩ
22 µF
Cr
TDA8559
Cb
13
MGD121
GND
Fig.13 Application 6: Line driver application (VP = 6 to 18 V).
1997 Jun 27
16
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
+V
P
V
V
P2
P1
100
nF
100 µF
15
16
STANDBY
1
REFERENCE
V
P
100 nF
2
50 kΩ
+
IN1
V/I
3
−
+
OUT1
14
−
+
−
OA
10 µF
50 kΩ
50 kΩ
7
8
DQC
220
nF
POWER
AMPLIFIER
INPUT
LOGIC
MUTE
MODE
+
−
OUT2
11
5
6
+
−
+
OA
IN2
100 nF
V/I
10 µF
−
50 kΩ
50
kΩ
50
kΩ
V
P
100 kΩ
BUFFER
12
4
SVRR
BUFFER
100
kΩ
TDA8559
Cb
13
MGD122
GND
Fig.14 Application 7: Line driver application (VP = 6 to 30 V).
1997 Jun 27
17
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
Response curves for low input mode
MDA089
MDA090
10
20
handbook, halfpage
handbook, halfpage
I
V
q
(mA)
P1
(V)
16
8
6
4
12
(1)
(2)
8
4
2
0
0
0
0
4
8
12
16
20
10
20
30
V
(V)
V
(V)
P2
P
(1) High mode.
(2) Low mode.
Fig.15 Iq as a function of VP (stereo headphone).
Fig.16 VP1 as a function of VP2 (stereo headphone).
MDA091
MDA092
2
10
1
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
10
1
(1)
(2)
(1)
−1
10
(2)
−1
10
−2
10
−2
10
−3
−2
−1
2
3
4
5
10
10
10
1
10
10
10
10
10
P
(W)
f (Hz)
o
RL = 32 Ω.
(1) VP = 5 V, THD = 50 mW.
(2) VP = 3 V, THD = 20 mW.
f = 1 kHz.
(1) P = 3 V, RL = 32 Ω.
(2) VP = 5 V, RL = 32 Ω.
V
Fig.18 THD as a function of frequency (stereo
headphone).
Fig.17 THD as a function of Po (stereo headphone).
1997 Jun 27
18
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
MDA093
−2
MDA094
10
1
handbook, halfpage
handbook, halfpage
I
V
q
(A)
o
(V)
−3
10
−1
10
(1)
(2) (3)
(1) (2)
−4
−5
−6
−7
10
10
10
10
−2
10
−3
10
−4
10
−5
10
0
1
2
3
0
0.5
1
1.5
2
V
2.5
(V)
V
(V)
stb
mute
(1) VP = 3 V.
(2) VP = 12 V.
(1) VP = 12 V.
(2) P = 3 and 6 V.
(3) VP = 3, 6 and 12 V.
V
Fig.20 Vo as a function of Vmute (stereo
headphone).
Fig.19 Iq as a function of Vstb (stereo headphone).
MDA095
MDA096
0
1
handbook, halfpage
handbook, halfpage
α
cs
∆Gr
(dB)
(dB)
−20
0.5
−40
0
−60
−80
−0.5
−1
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 3 V, Vi = 20 mV.
VP = 3 V, Vi = 20 mV.
Fig.21 Channel separation as a function of
frequency (stereo headphone).
Fig.22 Channel unbalance as a function of
frequency (stereo headphone).
1997 Jun 27
19
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
MDA097
MDA098
0
0.4
handbook, halfpage
handbook, halfpage
P
SVRR
(dB)
o
(W)
0.3
−20
−40
0.2
0.1
(1)
(2)
−60
−80
0
0
2
3
4
5
10
10
10
10
10
4
8
12
f (Hz)
V
(V)
P
(1) RL = 32 Ω, THD = 10%.
(2) RL = 32 Ω, THD = 0.5%.
VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
Fig.23 SVRR as a function of frequency (stereo
headphone).
Fig.24 Po as a function of VP (stereo headphone).
MDA099
MDA130
2
1.5
10
handbook, halfpage
handbook, halfpage
THD
(%)
P
(W)
10
1
(1)
(2)
1
−1
−2
(1)
(2)
0.5
10
10
0
−3
−2
−1
10
10
10
1
0
4
8
12
P
(W)
V
(V)
o
P
(1) RL = 25 Ω.
(2) RL = 32 Ω.
f = 1 kHz.
(1) VP = 3 V, RL = 25 Ω.
(2) VP = 5 V, RL = 25 Ω.
Fig.25 Total worst case power dissipation as a
function of supply voltage (SE) (stereo
headphone).
Fig.26 THD as a function of Po (BTL mono).
1997 Jun 27
20
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
MDA132
MDA131
1
0
handbook, halfpage
handbook, halfpage
SVRR
(dB)
THD
(%)
−20
−40
−60
−1
10
(1)
(2)
−2
−80
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
(1) VP = 3 V, RL = 25 Ω, THD = 70 mW.
(2) VP = 5 V, RL = 25 Ω, THD = 150 mW.
Fig.28 SVRR as a function of frequency (BTL
mono).
Fig.27 THD as a function of frequency (BTL mono).
MDA133
MDA134
1.6
1
handbook, halfpage
handbook, halfpage
P
P
o
(W)
(W)
1.2
0.8
0.75
(1)
(2)
0.5
0.25
0
(1)
(2)
0.4
0
0
4
8
12
0
4
8
12
V
(V)
V (V)
P
P
(1) THD = 10%; RL = 25 Ω.
(2) THD = 0.5%, RL = 25 Ω.
(1) RL = 25 Ω.
(2) RL = 32 Ω.
Fig.29 Po as a function of supply voltage (BTL
mono).
Fig.30 Total worst case power dissipation as a
function of supply voltage (BTL mono).
1997 Jun 27
21
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
Response curves for high input mode
MDA120
MDA119
2
0.8
handbook, halfpage
handbook, halfpage
P
P
o
(W)
(W)
0.6
1.6
(1)
(2)
1.2
0.8
0.4
0.2
(1)
(2)
0.4
0
0
0
0
4
8
12
16
4
8
12
16
V
(V)
P
V
(V)
P
(1) RL = 25 Ω.
(2) RL = 32 Ω.
(1) RL = 32 Ω, THD = 10%.
(2) RL = 32 Ω, THD = 0.5%.
Fig.32 Total worst case power dissipation as a
function of supply voltage (SE) (stereo
headphone).
Fig.31 Po as a function of VP (SE) (stereo
headphone).
MDA121
MDA122
2
10
1
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
10
1
(1)
−1
10
(2)
−1
10
−2
10
−2
10
−3
−2
−1
2
3
4
5
10
10
10
1
10
10
10
10
10
P
(W)
f (Hz)
o
VP = 10 V, RL = 32.
(1) Po = 100 mW.
(2) Po = 50 mW.
VP = 10 V, RL = 32 Ω, f = 1 kHz
Fig.34 THD as a function of frequency (stereo
headphone).
Fig.33 THD as a function of Po (stereo headphone).
1997 Jun 27
22
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
MDA123
MDA124
0
0
handbook, halfpage
handbook, halfpage
α
cs
SVRR
(dB)
(dB)
−20
−20
−40
−60
−40
−60
−80
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 10 V, Rs = 0 Ω, Vr = 0.2 V (RMS).
VP = 10 V, Vi = 20 mV.
Fig.35 Channel separation as a function of
frequency (stereo headphone).
Fig.36 SVRR as a function of frequency (stereo
headphone).
MDA125
MDA126
2
10
1
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
10
1
(1)
(2)
−1
10
−1
10
−2
10
−2
10
−2
−1
2
3
4
5
10
10
1
10
10
10
10
10
10
V
(V)
f (Hz)
o
VP = 12 V; Vo = 1 V.
(1) VP = 12 V, RL = 1 kΩ.
(2) VP = 18 V, RL = 1 kΩ.
Fig.38 THD as a function of frequency (stereo line
driver).
Fig.37 THD as a function of Vo (stereo line driver).
1997 Jun 27
23
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
MDA127
MDA128
0
0
handbook, halfpage
handbook, halfpage
α
(dB)
SVRR
(dB)
−20
−40
−60
−20
−40
−60
−80
−80
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 12 V; Vi = 20 mV.
VP = 12 V; Rs = 0 Ω; Vr = 0.2 V (RMS).
Fig.39 Channel separation as a function of
frequency (stereo line driver).
Fig.40 SVRR as a function of frequency (stereo
line driver).
MDA129
10
handbook, halfpage
V
o
(V)
8
6
4
(1)
(2)
2
0
0
4
8
12
16
20
V
(V)
P
(1) THD = 10%, RL = 1 kΩ.
(2) THD = 0.5%, RL = 1 kΩ.
Fig.41 Vo as a function of VP (stereo line driver).
1997 Jun 27
24
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
INTERNAL PIN CONFIGURATION
SYMBOL
STANDBY
PIN
EQUIVALENT CIRCUIT
1
V
P1
10 kΩ
12
kΩ
MGD110
+IN1, −IN1, +IN2
and −IN2
2, 3, 5 and 6
V
P1
MGD106
SVRR
4
V
P1
50
kΩ
50
kΩ
50
kΩ
50
kΩ
MGD107
1997 Jun 27
25
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL
MUTE
PIN
EQUIVALENT CIRCUIT
7
V
P1
MGD112
INPUT MODE
8
V
P1
250
kΩ
1 kΩ
5 kΩ
MGD113
OUT2 and OUT1
11 and 14
V
P1
100 Ω
50 Ω
MGD108
buffer output
1997 Jun 27
26
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SYMBOL
BUFFER
PIN
EQUIVALENT CIRCUIT
12
V
P1
buffer output
MGD109
VP2 and VP1
15 and 16
V
V
P1
P2
2 kΩ
MGD111
1997 Jun 27
27
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
PACKAGE OUTLINES
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
16
9
M
H
pin 1 index
E
1
8
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
1
1
E
max.
max.
min.
max.
1.40
1.14
0.53
0.38
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
2.2
0.021
0.015
0.013
0.009
0.86
0.84
0.32
0.31
0.055
0.045
0.26
0.24
0.15
0.13
0.37
0.33
inches
0.19
0.020
0.15
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-10-02
95-01-19
SOT38-1
050G09
MO-001AE
1997 Jun 27
28
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT109-1
076E07S
MS-012AC
1997 Jun 27
29
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1997 Jun 27
30
Philips Semiconductors
Product specification
Low-voltage stereo headphone amplifier
TDA8559
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 27
31
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Indonesia: see Singapore
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/02/pp32
Date of release: 1997 Jun 27
Document order number: 9397 750 02066
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