TDA8561Q/N2,112 [NXP]
TDA8561Q;
| 型号： | TDA8561Q/N2,112 |
| 厂家： | 
NXP |
| 描述： | TDA8561Q 放大器 商用集成电路 |
| 文件： | 总24页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8561Q
2 × 24 W BTL or 4 × 12 W
single-ended car radio power
amplifier
1999 Jun 30
Product specification
Supersedes data of 1997 Sep 22
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
• Reverse polarity safe
FEATURES
• Electrostatic discharge protection
• No switch-on/switch-off plop
• Flexible leads
• Requires very few external components
• High output power
• Flexibility in use; Quad single-ended or stereo BTL
• Low output offset voltage
• Low thermal resistance
• Identical inputs (inverting and non-inverting).
• Fixed gain
• Diagnostic facility (distortion, short-circuit and
temperature detection)
GENERAL DESCRIPTION
• Good ripple rejection
The TDA8561Q is an integrated class-B output amplifier in
a 17-lead single-in-line (SIL) power package. It contains
4 × 12 W Single-Ended (SE) or 2 × 24 W Bridge-Tied
Load (BTL) amplifiers.
• Mode select switch (operating, mute and standby)
• Load dump protection
• AC and DC short-circuit safe to ground and to VP
• Low power dissipation in any short-circuit condition
• Thermally protected
The device is primarily developed for car radio
applications.
QUICK REFERENCE DATA
SYMBOL
VP
IORM
IP
PARAMETER
positive operating supply voltage
repetitive peak output current
total quiescent current
CONDITIONS
MIN.
TYP.
14.4
MAX.
18
UNIT
6
−
−
−
V
A
−
4
80
0.1
−
mA
Isb
standby current
100
µA
Stereo BTL application
Po
output power
RL = 4 Ω; THD = 10%
Rs = 0 Ω
−
24
−
−
W
RR
Vno
ZI
supply voltage ripple rejection
noise output voltage
46
−
−
dB
µV
kΩ
mV
70
−
−
input impedance
25
−
−
∆VO|
DC output offset voltage
−
150
Quad single-ended application
Po
output power
THD = 10%
RL = 4 Ω
−
7
−
−
−
−
−
W
RL = 2 Ω
−
12
−
W
RR
Vno
ZI
supply voltage ripple rejection
noise output voltage
input impedance
46
−
dB
µV
kΩ
Rs = 0 Ω
50
−
50
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8561Q
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
1999 Jun 30
2
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
BLOCK DIAGRAM
V
V
P1
P2
13
5
non-inverting
input 1
1
mute switch
C
m
60
kΩ
TDA8561Q
6
VA
output 1
2
kΩ
18 kΩ
power stage
mute switch
C
m
60
kΩ
inverting
input 2
3
8
VA
output 2
2
kΩ
18 kΩ
power stage
V
P
mode
select
switch
14
stand-by
switch
stand-by
reference
voltage
VA
PROTECTIONS
thermal
short-circuit
mute
switch
15 kΩ
x1
16
diagnostic
output
4
supply voltage
ripple rejection
15 kΩ
mute
reference
voltage
17
non-inverting
input 4
C
mute switch
m
60
kΩ
12
VA
output 4
2
kΩ
18 kΩ
power stage
mute switch
C
m
60
kΩ
15
inverting
input 3
10
VA
output 3
2
kΩ
18 kΩ
power stage
input
reference
voltage
2
9
7
GND1
11
GND2
MEA858 - 1
ground
(signal)
not connected
power ground (substrate)
Fig.1 Block diagram.
3
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
PINNING
SYMBOL PIN
DESCRIPTION
non-inverting input 1
−INV 1
GND(S)
INV 2
RR
1
2
3
4
5
6
7
8
9
INV 1
1
2
3
4
5
6
7
8
9
signal ground
inverting input 2
supply voltage ripple rejection
supply voltage
output 1
GND(S)
INV 2
RR
VP1
OUT 1
GND1
OUT 2
n.c.
V
P1
power ground 1
output 2
OUT 1
GND1
OUT 2
not connected
OUT 3
GND2
OUT 4
VP2
10 output 3
11
power ground 2
n.c.
TDA8561Q
12 output 4
OUT 3 10
13 supply voltage
14 mode select switch input
15 inverting input 3
16 diagnostic output
17 non-inverting input 4
11
12
GND2
OUT 4
MODE
INV 3
VDIAG
−INV 4
V
13
P2
MODE 14
INV 3 15
V
DIAG
INV 4
16
17
MEA859 - 1
Fig.2 Pin configuration.
1999 Jun 30
4
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
During this short-circuit condition, pin 16 is LOW for 20 ms
FUNCTIONAL DESCRIPTION
and HIGH for 50 µs (see Fig.5).
The TDA8561Q contains four identical amplifiers and can
be used for Single-Ended (SE) or Bridge-Tied Load (BTL)
applications. The gain of each amplifier is fixed at 20 dB
(26 dB in BTL). Special features of the device are:
The power dissipation in any short-circuit condition is very
low.
Mode select switch (pin 14)
• Low standby current (<100 µA)
• Low switching current (low cost supply switch)
• Mute facility.
MGA705
V
handbook, halfpage
O
0
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17). This can be achieved
by:
V
16
V
P
• Microcontroller control
0
• External timing circuit (see Fig.11).
t
Diagnostic output (pin 16)
DYNAMIC DISTORTION DETECTOR (DDD)
Fig.3 Distortion detector waveform; BTL
application.
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 16
goes LOW. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 16 is independent of the number of channels that are
clipping (see Figs 3 and 4).
MGA706
V
handbook, halfpage
O
SHORT-CIRCUIT PROTECTION
0
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 16 is continuously LOW.
V
16
V
P
0
t
When a short-circuit across the load of one or both
channels occurs the output stages are switched off for
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).
Fig.4 Distortion detector waveform; single-ended
application.
1999 Jun 30
5
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
current
in
MGL214
output
stage
t
short-circuit over the load
V
16
20 ms
V
P
t
50 µs
Fig.5 Short-circuit waveform.
TEMPERATURE DETECTION
When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW.
OPEN-COLLECTOR OUTPUT
Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
positive supply voltage
operating
CONDITIONS
MIN.
MAX.
UNIT
vP
−
−
−
−
−
18
V
non-operating
30
45
6
V
load dump protection
during 50 ms; tr ≥ 2.5 ms
V
IOSM
IORM
Tstg
Tamb
Tvj
non-repetitive peak output current
repetitive peak output current
storage temperature
A
4
A
−55
−40
−
+150
+85
150
18
6
°C
°C
°C
V
operating ambient temperature
virtual junction temperature
AC and DC short-circuit safe voltage
reverse polarity
Vpsc
Vpr
−
−
V
Ptot
total power dissipation
−
60
W
1999 Jun 30
6
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL
Rth j-a
PARAMETER
VALUE
40
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
thermal resistance from junction to case (see Figs 6 and 7)
Rth j-c
1.3
virtual junction
handbook, halfpage
output 1 output 2
output 3 output 4
output 1
output 2
handbook, halfpage
virtual junction
3.0 K/W
3.0 K/W
3.0 K/W
3.0 K/W
2.2 K/W
2.2 K/W
0.7 K/W
0.7 K/W
0.2 K/W
MEA860 - 2
MEA861 - 1
case
0.2 K/W
case
Fig.6 Equivalent thermal resistance network;
BTL application.
Fig.7 Equivalent thermal resistance network;
single-ended application.
1999 Jun 30
7
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.8; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
IP
positive supply voltage
total quiescent current
DC output voltage
note 1
note 2
6
−
−
−
14.4
18
V
80
6.9
−
160
−
mA
V
VO
∆VO
DC output offset voltage
150
mV
Mode select switch
Von
switch-on voltage level
8.5
−
−
V
MUTE CONDITION
Vmute
VO
mute voltage
3.3
−
−
−
−
6.4
2
V
output voltage in mute position
VImax = 1 V; f = 1 kHz
mV
mV
∆VO
DC output offset voltage (between
pins 6 to 8 and 10 to 12)
−
150
STANDBY CONDITION
Vsb
Isb
standby voltage
0
−
−
−
2
V
standby current
−
100
40
µA
µA
Isw
switch-on current
12
Diagnostic output (pin 16)
VDIAG
diagnostic output voltage
any short-circuit or clipping −
−
0.6
V
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤0.5VP.
1999 Jun 30
8
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Stereo BTL application (measured in Fig.8)
Po
output power
note 1
THD = 0.5%
THD = 10%
Po = 1 W
15
19
−
W
20
24
−
−
W
%
THD
Po
total harmonic distortion
output power
−
0.06
VP = 13.2 V
THD = 0.5%
−
−
−
16
−
−
−
W
W
Hz
THD = 10%
20
B
power bandwidth
THD = 0.5%;
20 to
15000
45
Po = −1 dB; with respect to 15 W
at −1 dB; note 2
at −1 dB
fl
low frequency roll-off
high frequency roll-off
closed loop voltage gain
−
−
Hz
fh
20
25
−
−
kHz
dB
Gv
26
27
SVRR
supply voltage ripple rejection note 3
on
48
46
80
25
−
−
dB
dB
dB
kΩ
mute
−
−
standby
−
−
ZI
input impedance
noise output voltage
30
38
Vno
on
Rs = 0 Ω; note 4
−
70
100
60
60
−
−
µV
µV
µV
dB
dB
on
Rs = 10 kΩ; note 4
notes 4 and 5
Rs = 10 kΩ
−
200
−
mute
−
αcs
channel separation
channel unbalance
40
−
−
∆Gv
1
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V16 ≤ 0.6 V; no short-circuit
−
10
−
%
Quad single-ended application (measured in Fig.9)
Po
output power
note 1
THD = 0.5%
THD = 10%
Po = 1 W
4
5
−
−
−
W
W
%
5.5
−
7
THD
PO
total harmonic distortion
output power
0.06
RL = 2 Ω; note 1
THD = 0.5%
THD = 10%
7.5
10
−
10
12
25
−
−
W
−
W
fl
low frequency roll-off
high frequency roll-off
closed loop voltage gain
at −1 dB; note 2
at −1 dB
−
Hz
kHz
dB
fh
Gv
20
19
−
20
21
1999 Jun 30
9
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
SVRR
supply voltage ripple rejection note 3
on
48
−
−
−
−
dB
mute
46
80
50
−
dB
dB
kΩ
standby
−
ZI
input impedance
noise output voltage
60
75
Vno
on
Rs = 0 Ω; note 4
Rs = 10 kΩ; note 4
−
50
70
50
60
−
−
µV
µV
µV
dB
dB
on
−
100
−
mute
notes 4 and 5
−
αcs
channel separation
channel unbalance
Rs = 10 kΩ
40
−
−
∆Gv
1
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V16 ≤ 0.6 V; no short-circuit
−
10
−
%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency of between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
1999 Jun 30
10
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
TEST AND APPLICATION INFORMATION
V
P
mode
switch
2200
µF
100
nF
10
kΩ
diagnostic
14
16
5
13
TDA8561Q
TDA8564Q
220 nF
1
non- inverting
input 1
6
8
60
kΩ
3
2
inverting input 2
ground (signal)
60
kΩ
reference
voltage
4
9
supply voltage
ripple rejection
not connected
60
kΩ
220 nF
17
non-inverting
input 4
12
60
kΩ
10
15
inverting input 3
7
11
MEA862 - 2
power ground (substrate)
Fig.8 Stereo BTL application diagram.
11
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
V
P
mode
switch
2200
µF
100
nF
10
kΩ
14
16
5
13
TDA8561Q
TDA8564Q
220 nF
1
non- inverting
input 1
6
8
1000 µF
1000 µF
60
kΩ
220 nF
3
2
inverting
input 2
60
kΩ
ground (signal)
reference
voltage
4
supply voltage
ripple rejection
100
µF
1/2V
p
9
60
not connected
kΩ
17
non-inverting
input 4
12
220 nF
1000 µF
60
kΩ
10
220 nF
inverting
input 3
15
1000 µF
7
11
MEA863 - 2
power ground (substrate)
Fig.9 Quad single-ended application diagram 1.
12
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
V
P
mode
switch
2200
µF
100
nF
10
kΩ
14
16
5
13
TDA8561Q
TDA8564Q
220 nF
1
non- inverting
input 1
6
8
60
kΩ
220 nF
inverting
input 2
3
2
60
kΩ
ground (signal)
reference
voltage
9
V
P
not connected
2
4
60
kΩ
100
µF
D1
17
non-inverting
input 4
12
220 nF
220 nF
60
kΩ
10
inverting
input 3
15
7
11
MEA864 - 2
2200
µF
power ground (substrate)
(1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1.
Fig.10 Quad single-ended application diagram 2.
13
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
Mode select switch
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during >100 ms (charging of the input
capacitors at pins 1, 3, 15 and 17.
The circuit in Fig.11 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.
V
P
handbook, halfpage
10 kΩ
47 µF
100 Ω
mode
select
switch
100 kΩ
MGA708
Fig.11 Mode select switch circuitry.
MGA709
2
10
THD
(%)
10
1
(1)
1
10
(2)
(3)
2
10
2
1
2
10
10
1
10
P
(W)
10
o
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig.12 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 4 Ω.
1999 Jun 30
14
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
MGA710
50
P
o
(W)
40
(1)
30
20
10
0
(2)
(3)
8
10
12
14
16
18
V
(V)
P
(1) THD = 30%.
(2) THD = 10%.
(3) THD = 0.5%.
Fig.13 Output power as a function of supply voltage.
MGA711
20
P
o
(W)
18
16
14
12
10
2
3
4
5
10
10
10
10
f (Hz)
10
Fig.14 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 4 Ω.
1999 Jun 30
15
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
MGA712
1
THD
(%)
(1)
(2)
1
10
(3)
2
10
2
3
4
5
10
10
10
10
f (Hz)
10
(1) Po = 0.1 W.
(2) Po = 1 W.
(3) Po = 10 W.
Fig.15 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 4 Ω.
MGA713
50
RR
(dB)
(1)
(2)
60
70
80
90
(3)
100
10
2
3
4
5
10
10
10
f (Hz)
10
(1) On condition.
(2) Mute condition.
(3) Standby condition.
Fig.16 Ripple rejection as a function of frequency.
16
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
MGA714
100
I
q
(mA)
92
84
76
68
60
8
10
12
14
16
18
V
(V)
P
Fig.17 Quiescent current as a function of supply voltage; RL = ∞.
SINGLE-ENDED APPLICATION
MGA715
2
10
THD
(%)
10
1
(1)
(2)
(3)
1
10
2
10
2
1
2
10
10
1
10
P
(W)
10
o
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig.18 Total harmonic distortion as a function of output power; VP = 14.4 V, RL = 2 Ω.
1999 Jun 30
17
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
MGA716
15
P
o
(W)
12
(1)
9
6
3
0
(2)
(3)
8
10
12
14
16
18
V
(V)
P
(1) THD = 30%.
(2) THD = 10%.
(3) THD = 0.5%.
Fig.19 Output power as a function of supply voltage.
MGA717
10
P
o
(W)
8
6
4
2
0
2
3
4
5
10
10
10
10
f (Hz)
10
Fig.20 Power bandwidth as a function of frequency; THD = 0.5%, VP = 14.4 V, RL = 2 Ω.
1999 Jun 30
18
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
MGA718
1
THD
(%)
(1)
(2)
1
10
2
10
2
3
4
5
10
10
10
10
f (Hz)
10
(1) Po = 0.1 W.
(2) Po = 1 W.
Fig.21 Total harmonic distortion as a function of frequency; VP = 14.4 V, RL = 2 Ω.
MGA719
30
α
cs
(dB)
40
50
60
70
80
10
2
3
4
5
10
10
10
f (Hz)
10
Fig.22 Channel separation as a function of frequency.
19
1999 Jun 30
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
BTL APPLICATION
MGA720
14
P
tot
(W)
12
10
8
6
4
2
0
4
8
12
16
20
24
28
P
(W)
o
Fig.23 Total power dissipation as a function of output power; VP = 14.4 V, RL = 4 Ω (1 channel driven BTL or
4 channels in single-ended mode).
1999 Jun 30
20
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
2
v
M
1
17
e
e
m
w
M
1
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
2.54 1.27 5.08
0.8
4.3
0.4 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-03-11
97-12-16
SOT243-1
1999 Jun 30
21
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
The total contact time of successive solder waves must not
exceed 5 seconds.
SOLDERING
Introduction to soldering through-hole mount
packages
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 30
22
Philips Semiconductors
Product specification
2 × 24 W BTL or 4 × 12 W single-ended
car radio power amplifier
TDA8561Q
NOTES
1999 Jun 30
23
Philips Semiconductors – a worldwide company
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Slovenia: see Italy
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Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
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Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA66
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545002/04/pp24
Date of release: 1999 Jun 30
Document order number: 9397 750 06053
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