TDA8563AQ [NXP]
2 x 40 W/2 ohm stereo BTL car radio power amplifier with diagnostic facility; 2× 40瓦/ 2欧姆立体声BTL汽车收音机功率放大器与诊断设备型号: | TDA8563AQ |
厂家: | NXP |
描述: | 2 x 40 W/2 ohm stereo BTL car radio power amplifier with diagnostic facility |
文件: | 总20页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8563AQ
2 × 40 W/2 Ω stereo BTL car radio
power amplifier with diagnostic
facility
1997 Feb 20
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
• Thermally protected
FEATURES
• Reverse polarity safe
• Requires very few external components
• High output power
• Electrostatic discharge protection
• No switch-on/switch-off plop
• Flexible leads
• 4 Ω and 2 Ω load impedance
• Low output offset voltage
• Fixed gain
• Low thermal resistance.
• Diagnostic facility (distortion, short-circuit and
temperature detection)
GENERAL DESCRIPTION
• Good ripple rejection
The TDA8563AQ is an integrated class-B output amplifier
in a 13-lead single-in-line (SIL) power package.
It contains 2 × 40 W/2 Ω amplifiers in BTL configuration.
• Mode select switch (operating, mute and standby)
• Load dump protection
The device is primarily developed for car radio
applications.
• Short-circuit safe to ground, to VP and across the load
• Low power dissipation in any short-circuit condition
QUICK REFERENCE DATA
SYMBOL
PARAMETER
operating supply voltage
repetitive peak output current
total quiescent current
standby current
CONDITIONS
MIN.
6.0
TYP. MAX. UNIT
VP
14.4
−
18
7.5
−
V
IORM
Iq(tot)
Isb
−
A
−
115
0.1
−
mA
µA
µA
kΩ
W
−
100
40
−
Isw
switch-on current
−
ZI
input impedance
25
−
30
25
40
60
50
26
−
Po
output power
RL = 4 Ω; THD = 10%
RL = 2 Ω; THD = 10%
Rs = 0 Ω
−
−
−
W
SVRR
αcs
supply voltage ripple rejection
channel separation
−
−
dB
dB
dB
µV
mV
Rs = 10 kΩ
−
−
Gv
closed loop voltage gain
noise output voltage
25
−
27
120
150
Vno
Rs = 0 Ω
∆VO
DC output offset voltage
−
−
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TDA8563AQ
DBS13P
plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
1997 Feb 20
2
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
BLOCK DIAGRAM
V
V
P1
P2
10
3
1
mute switch
C
m
input 1
TDA8563AQ
4
VA
output 1A
2.3
kΩ
PROTECTIONS
Load dump
Soar
power stage
Thermal
Short - circuit
Reverse polarity
20.7 kΩ
mute switch
C
m
6
VA
output 1B
30
kΩ
2.3
kΩ
power stage
20.7 kΩ
V
P
11
mode switch
stand-by
switch
stand-by
reference
voltage
VA
15 kΩ
x1
mute
switch
12
diagnostic
output
DIAGNOSTIC
INTERFACE
15 kΩ
mute
reference
voltage
13
mute switch
C
m
input 2
9
VA
output 2B
2.3
kΩ
power stage
20.7 kΩ
mute switch
C
m
7
VA
output 2A
30
kΩ
2.3
kΩ
input
reference
voltage
power stage
20.7 kΩ
2
5
GND1
8
GND2
MGL073
ground (signal)
power ground (substrate)
Fig.1 Block diagram.
3
1997 Feb 20
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
PINNING
SYMBOL
FUNCTIONAL DESCRIPTION
The TDA8563AQ contains two identical amplifiers and can
be used for bridge applications. The gain of each amplifier
is fixed at 26 dB. Special features of the device are as
follows.
PIN
DESCRIPTION
input 1
IN 1
1
2
GND(S)
VP1
signal ground
supply voltage 1
output 1A
3
Mode select switch (pin 11)
OUT 1A
GND1
OUT 1B
OUT 2A
GND2
OUT 2B
VP2
4
• Standby: low supply current (<100 µA)
• Mute: input signal suppressed
5
power ground 1
output 1B
6
7
output 2A
• Operating: normal on condition.
8
power ground 2
output 2B
Since this pin has a very low input current (<40 µA), a low
cost supply switch can be applied.
9
10
11
12
13
supply voltage 2
mode switch input
diagnostic output
input 2
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during ≥100 ms (charging of the input
capacitors at pin 1 and pin 13). During switching from
standby to mute, the slope should be at least 18 V/s.
MODE
VDIAG
IN 2
This can be achieved by:
• Microprocessor control
• External timing circuit (see Fig.7).
Diagnostic output (pin 12)
handbook, halfpage
DYNAMIC DISTORTION DETECTOR (DDD)
IN 1
1
2
At the onset of clipping of one or more output stages, the
dynamic distortion detector becomes active and pin 12
goes low. This information can be used to drive a sound
processor or DC volume control to attenuate the input
signal and thus limit the distortion. The output level of
pin 12 is independent of the number of channels that are
clipping (see Fig.3).
GND(S)
V
3
P1
OUT 1A
GND1
4
5
OUT 1B
OUT 2A
GND2
6
7
TDA8563AQ
8
OUT 2B
9
MGA721
V
handbook, halfpage
V
10
11
12
P2
O
MODE
0
V
DIAG
IN 2 13
V
12
V
P
MGL075
0
t
Fig.3 Distortion detector waveform.
Fig.2 Pin configuration.
1997 Feb 20
4
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
During this short-circuit condition, pin 12 is low for 20 ms
SHORT-CIRCUIT PROTECTION
and high for 50 µs (see Fig.4).
When a short-circuit occurs at one or more outputs to
ground or to the supply voltage, the output stages are
switched off until the short-circuit is removed and the
device is switched on again, with a delay of approximately
20 ms, after removal of the short-circuit. During this
short-circuit condition, pin 12 is continuously low.
The power dissipation in any short-circuit condition is
very low.
TEMPERATURE DETECTION
When the virtual junction temperature Tvj reaches 150 °C,
When a short-circuit across the load of one or both
channels occurs the output stages are switched off during
approximately 20 ms. After that time it is checked during
approximately 50 µs to see whether the short-circuit is still
present. Due to this duty cycle of 50 µs/20 ms the average
current consumption during this short-circuit condition is
very low (approximately 40 mA).
pin 12 will become continuously low.
OPEN COLLECTOR OUTPUT
Pin 12 is an open collector output, which allows pin 12 of
more devices being tied together.
current
h
in
MGA722
output
stage
t
short-circuit over the load
V
12
20 ms
V
P
t
µ
50
s
Fig.4 Short-circuit waveform.
1997 Feb 20
5
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
operating
−
−
−
−
−
−
−
−
18
V
V
V
V
V
A
A
non-operating
30
load dump protection
during 50 ms; tr ≥ 2.5 ms
45
Vpsc
Vpr
AC and DC short-circuit safe voltage
reverse polarity
18
6
IOSM
IORM
Ptot
non-repetitive peak output current
repetitive peak output current
total power dissipation
10
7.5
60
W
Tstg
Tamb
Tvj
storage temperature
−55
−40
−
+150
+85
150
°C
°C
°C
operating ambient temperature
virtual junction temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
K/W
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case (see Fig.5)
40
1.3
output 1
output 2
handbook, halfpage
virtual junction
2.2 K/W
2.2 K/W
0.2 K/W
MBA624
case
Fig.5 Equivalent thermal resistance network.
1997 Feb 20
6
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VP
Iq
supply voltage
quiescent current
note 1
6.0
14.4
115
18
V
RL = ∞
−
180
mA
Operating condition
V11
I11
mode switch voltage level
8.5
−
−
VP
40
−
V
mode switch current
DC output voltage
V11 = 14.4 V
note 2
15
7.3
−
µA
V
VO
−
∆VO
DC output offset voltage
−
150
mV
Mute condition
V11
VO
mode switch voltage level
DC output voltage
3.3
−
−
6.4
−
V
note 2
7.3
−
V
∆VO
DC output offset voltage
−
150
mV
Standby condition
V11
Isb
mode switch voltage level
standby current
0
−
2
V
−
0.1
100
µA
Diagnostic output
V12
diagnostic output voltage
any short-circuit or clipping
−
−
0.6
V
Notes
1. The circuit is DC adjusted at VP = 6 to 18 V and AC operating at VP = 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage ≤1⁄2VP.
1997 Feb 20
7
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
AC CHARACTERISTICS
VP = 14.4 V; RL = 2 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
THD = 0.5%
MIN.
25
TYP.
MAX. UNIT
Po
Po
30
40
55
25
35
0.1
2.2
−
−
−
−
−
−
−
W
W
W
W
W
%
%
Hz
THD = 10%
THD = 30%
33
45
output power
THD = 0.5%; VP = 13.2 V −
THD = 10%; VP = 13.2 V
Po = 1 W
−
−
−
−
THD
B
total harmonic distortion
power bandwidth
V
12 ≤ 0.6 V; note 1
THD = 0.5%;
20 to 20000 −
Po = −1 dB
with respect to 25 W
flr
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
on
at −1 dB; note 2
at −1 dB
−
25
−
−
Hz
fhr
20
25
−
kHz
dB
Gv
26
27
SVRR
note 3
note 3
note 3
50
50
80
25
−
−
dB
dB
dB
kΩ
mute
−
−
standby
−
−
Zi
input impedance
noise output voltage
on
30
38
Vno
note 4
note 5
note 6
note 7
−
85
100
60
−
120
−
µV
µV
µV
dB
dB
mV
on
−
mute
−
−
αcs
∆Gv
Vo
channel separation
channel unbalance
output voltage in mute
45
−
−
−
1
note 8
−
−
2
Notes
1. Dynamic distortion detector active.
2. Frequency response externally fixed.
3. Vripple = Vripple(max) = 2 V (p-p); Rs = 0 Ω.
4. B = 20 Hz to 20 kHz; Rs = 0 Ω.
5. B = 20 Hz to 20 kHz; Rs = 10 kΩ.
6. B = 20 Hz to 20 kHz; independent of Rs.
7. Po = 25 W; Rs = 10 kΩ.
8. Vi = Vi(max) = 1 V (RMS).
1997 Feb 20
8
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Fig.6; unless otherwise specified.
SYMBOL
Po
PARAMETER
CONDITIONS
THD = 0.5%
MIN. TYP. MAX. UNIT
output power
output power
16
21
28
−
19
25
35
15
21
0.1
−
−
−
−
−
−
W
W
W
W
W
%
THD = 10%
THD = 30%
Po
THD = 0.5%; VP = 13.2 V
THD = 10%; VP = 13.2 V
Po = 1 W
−
THD
total harmonic distortion
−
1997 Feb 20
9
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
TEST AND APPLICATION INFORMATION
mode switch
V
P
2200
µF
100
nF
11
3
10
470 nF
1
input 1
4
6
30
kΩ
V
P
2
TDA8563AQ
ground (signal)
10 kΩ
12
diagnostic
output
reference
voltage
470 nF
13
input 2
9
30
kΩ
7
5
8
MGL074
power ground (substrate)
(1) To avoid high energy switching pulses which can feedback to the inputs it is advisable to ensure that the value of the resistor at pin 12 is ≥10 kΩ.
Fig.6 Stereo BTL test/application diagram.
1997 Feb 20
10
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
Diagnostic output
Special care must be taken in the printed-circuit board
layout to separate pin 12 from pin 1 and pin 13, to
minimize the crosstalk between the diagnostic output and
the inputs.
Mode select switch
To avoid switch-on plops, it is advised to keep the amplifier
in the mute mode during >100 ms (charging of the input
capacitors at pin 1 and pin 13).
+V
P
handbook, halfpage
10 kΩ
MODE
The circuit in Fig.7 slowly ramps up the voltage at the
mode select switch pin when switching on and results in
fast muting when switching off.
47 µF
BZX79C/3.9V
MGD959
Fig.7 Mode select switch circuitry.
MLB667
2
10
THD
(%)
10
1
(1)
1
10
(2)
(3)
2
10
2
1
2
10
10
1
10
P
(W)
10
o
(1) f = 10 kHz.
(2) f = 1 Hz.
(3) f = 100 Hz.
Fig.8 Total harmonic distortion as a function of output power; VP = 14.4 V; RL = 2 Ω.
1997 Feb 20
11
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
MGA905
70
P
o
(W)
60
50
(1)
40
30
20
10
(2)
(3)
0
8
10
12
14
16
18
V
(V)
P
(1) THD = 30%.
(2) THD = 10%.
(3) THD = 0.5%.
Fig.9 Output power as a function of supply voltage; f = 1 kHz; RL = 2 Ω.
MLB668
33
P
o
(W)
31
29
27
25
23
10
2
3
4
5
10
10
10
f (Hz)
10
Fig.10 Output power as a function of frequency; THD = 0.5%; VP = 14.4 V; RL = 2 Ω.
1997 Feb 20
12
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
MLB669
1
THD
(%)
1
10
(1)
(2)
(3)
2
10
2
3
4
5
10
10
10
10
f (Hz)
10
(1) Po = 0.1 W.
(2)
Po = 1 W.
(3) Po = 10 W.
Fig.11 Total harmonic distortion as a function of frequency; VP = 14.4 V; RL = 2 Ω.
MLB670
50
SVRR
(dB)
60
70
(1)
(2)
80
10
2
3
4
5
10
10
10
f (Hz)
10
(1) On condition.
(2) Mute condition.
Fig.12 Ripple rejection as a function of frequency; VP = 14.4 V; Vripple = 2 V (p-p); Rs = 0 Ω.
1997 Feb 20
13
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
MLB671
40
α
cs
(dB)
50
60
70
2
3
4
5
10
10
10
10
f (Hz)
10
Fig.13 Channel separation as a function of frequency; VP = 14.4 V; Po = 25 W; RL = 2 Ω; Rs = 10 kΩ.
MGA909
150
I
q
(mA)
130
110
90
70
50
8
10
12
14
16
18
V
(V)
P
Fig.14 Quiescent current as a function of supply voltage; RL = ∞.
1997 Feb 20
14
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
PACKAGE OUTLINE
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
non-concave
x
D
h
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
1
13
e
e
m
v
M
w
M
1
Z
2
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
3.4
1.7 5.08
0.8
4.3
0.25 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-03-11
SOT141-6
1997 Feb 20
15
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 20
16
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
NOTES
1997 Feb 20
17
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
NOTES
1997 Feb 20
18
Philips Semiconductors
Product specification
2 × 40 W/2 Ω stereo BTL car radio power
amplifier with diagnostic facility
TDA8563AQ
NOTES
1997 Feb 20
19
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Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874
Indonesia: see Singapore
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/01/pp20
Date of release: 1997 Feb 20
Document order number: 9397 750 01725
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