TEA1068T [NXP]
Versatile telephone transmission circuit with dialler interface; 与拨号接口的多功能电话传输电路
| 型号： | TEA1068T |
| 厂家： | 
NXP |
| 描述： | Versatile telephone transmission circuit with dialler interface |
| 文件： | 总24页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1068
Versatile telephone transmission
circuit with dialler interface
1996 Apr 23
Product specification
Supersedes data of June 1990
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
• Large gain setting range on microphone and earpiece
FEATURES
amplifiers
• Voltage regulator with adjustable static resistance
• Provides supply for external circuitry
• Line current-dependent line loss compensation facility
for microphone and earpiece amplifiers
• Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezoelectric microphones
• Gain control adaptable to exchange supply
• DC line voltage adjustment facility.
• Asymmetrical high-impedance input (32 kΩ) for electret
microphone
GENERAL DESCRIPTION
• Dual-Tone Multi-Frequency (DTMF) signal input with
confidence tone
The TEA1068 is a bipolar integrated circuit performing all
speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between dialling and speech.
• Mute input for pulse or DTMF dialling
• Power down input for pulse dial or register recall
• Receiving amplifier for magnetic, dynamic or
piezoelectric earpieces
QUICK REFERENCE DATA
SYMBOL
VLN
PARAMETER
CONDITIONS
Iline = 15 mA
MIN. TYP. MAX. UNIT
line voltage
line current
TEA1068
4.2
4.45
4.7
V
Iline
normal operation
10
10
−
−
140
100
1.3
82
mA
mA
mA
µA
TEA1068T
normal operation
−
ICC
internal supply current
power down; input LOW
power down; input HIGH
0.96
55
−
VCC
supply voltage for peripherals
Iline = 15 mA;
MUTE = HIGH
Ip = 1.2 mA
Ip = 1.7 mA
2.8
2.5
3.05
−
−
V
V
−
Gv
voltage gain
microphone amplifier
44
−
60
39
6.3
60
1
dB
dB
dB
V
receiving amplifier
17
−
∆Gv
line loss compensation gain control range
exchange supply voltage
exchange feeding bridge resistance range
ambient operating temperature
5.5
24
5.9
−
Vexch
Rexch
Tamb
0.4
−25
−
kΩ
°C
+75
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
NUMBER
NAME
VERSION
TEA1068
DIP18
SO20
plastic dual in-line package; 18 leads (300 mil)
SOT102-1
SOT163-1
TEA1068T
plastic small outline package; 20 leads; body width 7.5 mm
1996 Apr 23
2
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
BLOCK DIAGRAM
V
CC
15 (17)
LN
1 (1)
11 (12)
6 (6)
5 (5)
4 (4)
GAR
QR+
QR−
IR
TEA1068
TEA1068T
8 (9)
7 (7)
MIC+
MIC−
2 (2)
3 (3)
GAS1
GAS2
13 (15)
DTMF
dB
14 (16)
12 (14)
MUTE
PD
SUPPLY AND
REFERENCE
AGC
CIRCUIT
CURRENT
REFERENCE
10 (11)
16 (18)
REG
17 (19)
AGC
9 (10)
STAB
18 (20)
MBH130
SLPE
V
EE
The figures in parentheses refer to the TEA1068T.
Fig.1 Block diagram.
1996 Apr 23
3
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
PINNING
PIN
SYMBOL
DESCRIPTION
TEA1068
TEA1068T
LN
1
2
1
2
positive line terminal
GAS1
GAS2
QR−
QR+
GAR
MIC−
n.c.
gain adjustment transmitting amplifier
gain adjustment transmitting amplifier
inverting output receiving amplifier
non-inverting output receiving amplifier
gain adjustment receiving amplifier
inverting microphone input
not connected
3
3
4
4
5
5
6
6
7
7
−
8
MIC+
STAB
VEE
8
9
non-inverting microphone input
current stabilizer
9
10
11
12
13
14
15
16
17
18
19
20
10
11
−
negative line terminal
IR
receiving amplifier input
n.c.
not connected
PD
12
13
14
15
16
17
18
power-down input
DTMF
MUTE
VCC
dual-tone multi-frequency input
mute input
positive supply decoupling
voltage regulator decoupling
automatic gain control input
slope (DC resistance) adjustment
REG
AGC
SLPE
handbook, halfpage
LN
GAS1
GAS2
QR−
1
2
3
4
5
6
7
8
9
20 SLPE
handbook, halfpage
LN
GAS1
GAS2
QR−
SLPE
AGC
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
AGC
REG
19
18
17
REG
V
CC
V
CC
16 MUTE
15 DTMF
14 PD
QR+
MUTE
DTMF
QR+
TEA1068
TEA1068T
GAR
GAR
MIC−
MIC−
12 PD
11 IR
n.c.
13 n.c.
12 IR
MIC+
MIC+
V
10
STAB
EE
V
11
STAB 10
EE
MBH132
MBH131
Fig.2 Pin configuration TEA1068.
Fig.3 Pin configuration TEA1068T.
1996 Apr 23
4
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
FUNCTIONAL DESCRIPTION
Supplies: VCC, LN, SLPE, REG and STAB
Power for the TEA1068 and its peripheral circuits is usually
obtained from the telephone line. The TEA1068 develops
its own supply at VCC and regulates its voltage drop. The
supply voltage VC
Cm
a
y
a
l
c
i
r
c
u
i
t
s
D
c
e
a
c
p
C
o
a
u
c
p
i
l
i
o
a
n
d
t
V
C
1996 Apr 23
5
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
Mute input (MUTE)
Automatic Gain Control input AGC
A HIGH level at MUTE enables the DTMF input and
inhibits the microphone and the receiving amplifier inputs.
Automatic line loss compensation is achieved by
connecting a resistor R6 between AGC and VEE. This
automatic gain control varies the microphone amplifier
gain and the receiving amplifier gain in accordance with
the DC line current.
A LOW level or an open circuit has the reverse effect.
MUTE switching causes only negligible clicks at the
earpiece outputs and on the line.
The control range is 5.9 dB. This corresponds to a line
length of 5 km for a 0.5 mm diameter copper twisted-pair
cable with a DC resistance of 176 Ω/km and an average
attenuation 1.2 dB/km.
Dual-Tone Multi Frequency input (DTMF)
When the DTMF input is enabled, dialling tones may be
sent onto the line. The voltage gain from DTMF to LN is
typically 25.5 dB (when R7 = 68 kΩ) and varies with R7 in
the same way as the gain of the microphone amplifier.
The signalling tones can be heard in the telephone
earpiece at a low level (confidence tone).
Resistor R6 should be chosen in accordance with the
exchange supply voltage and its feeding bridge resistance
(see Fig.13 and Table 1). Different values of R6 give the
same ratio of line currents for start and end of the control
range. If automatic line loss compensation is not required,
AGC may be left open. The amplifiers then all give their
maximum gain as specified.
Receiving amplifier: IR, QR+, QR− and GAR
The receiving amplifier has one input IR and two
complementary outputs, a non-inverting output QR+ and
an inverting output QR−. These outputs may be used for
single-ended or for differential drive depending on the
sensitivity and type of earpiece used (see Fig.12). Gain
from IR to QR+ is typically 25 dB (when R4 = 100 kΩ).
This is sufficient for low-impedance magnetic or dynamic
microphones, which are suited for single-ended drive.
By using both outputs (differential drive), the gain is
increased by 6 dB. This feature can be used when the
earpiece impedance exceeds 450 Ω, (high-impedance
dynamic or piezoelectric types).
Power-Down input (PD)
During pulse dialling or register recall (timed loop break),
the telephone line is interrupted. During these
interruptions, the telephone line provides no power for the
transmission circuit or circuits supplied by VCC. The charge
held on C1 will bridge these gaps. This bridging is made
easier by a HIGH level on the PD input, which reduces the
typical supply current from 1 mA to 55 µA and switches off
the voltage regulator, thus preventing discharge through
LN. When PD is HIGH, the capacitor at REG is
disconnected with the effect that the voltage stabilizer will
have no switch-on delay after line interruptions. This
minimizes the contribution of the IC to the current
waveform during pulse dialling or register recall. When this
facility is not required, PD may be left open-circuit.
The output voltage of the receiving amplifier is specified for
continuous-wave drive. The maximum output voltage will
be higher under speech conditions where the ratio of peak
to RMS value is higher.
The receiving amplifier gain can be adjusted between
17 dB and 33 dB with single-ended drive and between
26 dB and 39 dB with differential drive to suit the sensitivity
of the transducer used. The gain is set by the external
resistor R4 connected between GAR and QR+. Overall
receive gain between LN and QR+ is calculated by
subtracting the anti-side-tone network attenuation (32 dB)
from the amplifier gain. Two external capacitors,
C4 = 100 pF and C7 = 10 × C4 = 1 nF, are necessary to
ensure stability. A larger value of C4 may be chosen to
obtain a first-order, low-pass filter. The ‘cut-off’ frequency
corresponds with the time constant R4 × C4.
Side-tone suppression
Suppression of the transmitted signal in the earpiece is
obtained by the anti-side-tone network consisting of
R1//Zline, R2, R3 and Zbal (see Fig.14). Maximum
compensation is obtained when the following conditions
are fulfilled:
R9 × R2 = R1 (R3 + [R8//Zbal] )
(1)
[Zbal ⁄ (Zbal + R8) = Zline ⁄ (Zline + R1) ]
(2)
1996 Apr 23
6
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
chosen for Zbal, thus giving an optimum setting for short or
long lines.
If fixed values are chosen for R1, R2, R3 and R9, then
condition (1) will always be fulfilled, provided that
R8//Zbal << R3. To obtain optimum side-tone
Example: the balanced line impedance (Zbal) at which the
optimum suppression is preset can be calculated by:
suppression, condition (2) has to be fulfilled, resulting in:
Z
bal = (R8/R1) Zline = k × Zline, where k is a scale factor:
Assume Zline = 210 Ω + (1265 Ω/140 nF), representing a
5 km line of 0.5 mm diameter, copper, twisted-pair cable
matched to 600 Ω (176 Ω/km; 38 nF/km). When k = 0.64,
then R8 = 390 Ω; Zbal = 130 Ω + (820 Ω//220 nF).
k = (R8/R1).
Scale factor k (dependent on the value of R8) must be
chosen to meet the following criteria:
The anti-side-tone network for the TEA1060 family shown
in Fig.5 attenuates the signal received from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range.
1. Compatibility with a standard capacitor from the E6 or
E12 range for Zbal
2. Zbal//R8 << R3 to fulfil condition (1) and thus
ensuring correct anti-side-tone bridge operation
3. Zbal + R8 >> R9 to avoid influencing the transmitter
gain.
Figure 6 shows a conventional Wheatstone bridge
anti-side-tone circuit that can be used as an alternative.
Both bridge types can be used with either resistive or
complex set impedances.
In practice, Zline varies greatly with the line length and
cable type; consequently, an average value has to be
LN
R1
R9
R2
Z
line
V
IR
i
m
EE
R
t
R3
Z
R8
bal
SLPE
MSA500
Fig.5 Equivalent circuit of TEA1060 family anti-side-tone bridge.
1996 Apr 23
7
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
LN
R1
R9
Z
bal
Z
line
V
IR
i
m
EE
R
t
R8
R
A
SLPE
MSA501
Fig.6 Equivalent circuit of an anti-side-tone network in a Wheatstone bridge configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VLN
PARAMETER
CONDITIONS
MIN.
MAX.
12
UNIT
positive continuous line voltage
−
−
V
V
VLN(R)
repetitive line voltage during switch-on or
line interruption
13.2
VLN(RM)
repetitive peak line voltage for a 1 ms pulse R9 = 20 Ω;
−
28
V
per 5 s
R10 = 13 Ω; (Fig.15)
Iline
Vn
line current
R9 = 20 Ω; note 1
R9 = 20 Ω; note 2
−
140
mA
V
voltage on any other pin
total power dissipation
TEA1068
V
EE − 0.7 VCC + 0.7
Ptot
−
−
769
555
mW
mW
°C
TEA1068T
Tstg
Tamb
Tj
IC storage temperature
operating ambient temperature
junction temperature
−40
−25
−
+125
+75
°C
125
°C
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 7 and 8 to
determine the current as a function of the required voltage and the temperature.
2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum junction temperature of
125 °C.
1996 Apr 23
8
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
thermal resistance from junction to ambient in free air
TEA1068
65
90
K/W
K/W
TEA1068T
MBH125
MBH133
160
LN
(mA)
150
LN
(mA)
handbook, halfpage
handbook, halfpage
I
I
140
130
(1)
120
100
80
110
90
(2)
(1)
(2)
(3)
(4)
(3)
70
(4)
60
50
40
2
30
2
4
6
8
10
-V
12
4
6
8
10
12
V
(V)
V
− V
(V)
LN SLPE
LN
SLPE
(1) Tamb = 45 °C; Ptot = 1231 mW.
(2) amb = 55 °C; Ptot = 1077 mW.
(1) Tamb = 45 °C; Ptot = 888 mW.
(2) amb = 55 °C; Ptot = 777 mW.
T
T
(3) Tamb = 65 °C; Ptot = 923 mW.
(4) Tamb = 75 °C; Ptot = 769 mW.
(3) Tamb = 65 °C; Ptot = 666 mW.
(4) Tamb = 75 °C; Ptot = 555 mW.
Fig.7 Safe operating area TEA1068.
Fig.8 Safe operating area TEA1068T.
1996 Apr 23
9
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
CHARACTERISTICS
Iline = 10 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Supplies: LN and VCC
VLN
voltage drop over circuit between
LN and VEE
microphone inputs open
I
I
I
I
line = 5 mA
3.95
4.25
4.45
6.1
−
4.55
4.7
6.7
7.5
0
V
line = 15 mA
line = 100 mA
line = 140 mA
4.2
5.4
−
V
V
V
∆VLN/∆T
voltage drop variation with
temperature
Iline = 15 mA
−4
−2
mV/K
VLN
voltage drop over circuit, between Iline = 15 mA
LN and VEE with external resistor
R
R
VA (LN to REG) = 68 kΩ
3.45
3.8
5
4.1
V
V
RVA
VA (REG to SLPE) = 39 kΩ 4.65
5.35
ICC
supply current
VCC = 2.8 V
PD = LOW
−
−
0.96
55
1.3
82
mA
PD = HIGH
µA
VCC
supply voltage available for
peripheral circuitry
Iline = 15 mA; MUTE = HIGH
Ip = 1.2 mA
2.8
3.5
3.05
3.75
−
−
V
V
Ip = 0 mA
Microphone inputs MIC+ and MIC−
Zi
input impedance
differential between
MIC+ and MIC−
51
64
32
77
kΩ
kΩ
single-ended MIC+ or
25.5
38.5
MIC− to VEE
CMRR
Gv
common mode rejection ratio
−
82
−
dB
dB
dB
voltage gain from MIC+/MIC− to LN Iline = 15 mA; R7 = 68 kΩ;
51
−0.5
52
53
+0.5
∆Gvf
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
with respect to 800 Hz
±0.2
∆GvT
gain variation with temperature at
Iline = 50 mA;
−
±0.2
−
dB
−25 °C and +75 °C
with respect to 25 °C; without
R6
Dual-tone multi-frequency input DTMF
Zi
input impedance
16.8
24.5
−0.5
20.7
25.5
±0.2
24.6
26.5
+0.5
kΩ
dB
dB
Gv
voltage gain from DTMF to LN
Iline = 15 mA; R7 = 68 kΩ
∆Gvf
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
with respect to 800 Hz
∆GvT
gain variation with temperature at
Iline = 50 mA;
−
±0.5
−
dB
T
amb = −25 °C and +75 °C
with respect to 25 °C
Gain adjustment connections GAS1 and GAS2
∆Gv
gain variation with R7, transmitting
amplifier
−8
−
+8
dB
1996 Apr 23
10
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Transmitting amplifier output LN
VLN(rms)
output voltage (RMS value)
Iline = 15 mA
THD = 2%
1.9
2.3
2.6
−72
−
−
−
V
THD = 10%
−
−
V
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R7 = 68 kΩ;
200 Ω between MIC− and
MIC+; psophometrically
weighted (P53 curve)
dBmp
Receiving amplifier input IR
Zi input impedance
Receiving amplifier outputs QR+ and QR−
17
21
4
25
kΩ
Zo
Gv
output impedance
single ended
Iline = 15 mA
−
−
Ω
voltage gain from IR to QR+ or
QR−
RL (from QR+ or
QR−) = 300 Ω; single-ended
24
30
−0.5
−
25
26
32
0
dB
dB
dB
dB
RL (from QR+ or
QR−) = 600 Ω; differential
31
∆Gvf
gain variation with frequency at
f = 300 Hz and f = 3400 Hz
with respect to 800 Hz
−0.2
±0.2
∆GvT
gain variation with temperature at
Iline = 50 mA;
−
T
amb = −25 °C and +75 °C
with respect to 25 °C;
without R6
Vo(rms)
output voltage (RMS value)
sine wave drive; Iline = 15 mA;
Ip = 0 mA; THD = 2%;
R4 = 100 kΩ
single-ended; RL = 150 Ω
single-ended; RL = 450 Ω
differential; f = 3400 Hz;
0.3
0.4
0.8
0.38
0.52
1.0
−
−
−
V
V
V
R
series = 100 Ω; CL = 47 nF
Vno(rms)
noise output voltage (RMS value)
Iline = 15 mA; R4 = 100 kΩ;
IR open-circuit
psophometrically weighted
(P53 curve)
single-ended; RL = 300 Ω
differential; RL = 600 Ω
−
−
50
−
−
µV
µV
100
Gain adjustment GAR
∆Gv
gain variation of receiving amplifier
−8
−
+8
dB
achievable by varying R4 between
GAR and QR
1996 Apr 23
11
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
MUTE input
VIH
HIGH level input voltage
LOW level input voltage
input current
1.5
−
VCC
0.3
15
−
V
VIL
−
−
−
−
V
IMUTE
∆Gv
8
µA
dB
voltage gain reduction between
MUTE = HIGH
70
MIC+ and MIC− to LN
Gv
voltage gain from DTMF to QR+ or MUTE = HIGH; R4 = 100 kΩ;
QR− single-ended; RL = 300 Ω
−21
−19
−17
dB
Power-Down input PD
VIH
VIL
Ipd
HIGH level input voltage
1.5
−
−
−
5
VCC
0.3
10
V
LOW level input voltage
V
input current in power-down
condition
−
µA
Automatic Gain Control input AGC
∆Gv
gain control range from IR to
Iline = 70 mA; R6 = 110 kΩ
−5.5
−5.9
−6.3
dB
QR+/QR− and from MIC+/MIC− to between AGC and VEE
LN
Iline(H)
Iline(L)
∆Gv
highest line current for maximum
gain
R6 = 110 kΩ between AGC
and VEE
−
23
−
mA
mA
dB
lowest line current for minimum
gain
R6 = 110 kΩ between AGC
and VEE
−
61
−
voltage gain variation
between Iline = 15 mA and
Iline = 35 mA; R6 = 110 kΩ
between AGC and VEE
−1.0
−1.5
−2.0
R
I
a
R1
line
line
I
I
+ 0.5 mA
CC
SLPE
I
p
LN
V
CC
TEA1068
R
exch
DC
AC
0.5 mA
peripheral
circuits
C1
V
V
exch
REG
C3
STAB
SLPE
R9
EE
I
SLPE
R5
MBH134
Fig.9 Supply arrangement.
12
1996 Apr 23
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
MBH124
3
handbook, halfpage
(1)
I
p
(mA)
(2)
2
(3)
1
(4)
0
0
1
2
3
4
V
(V)
CC
Curve (1) is valid when the receiving amplifier is not driven or when MUTE = HIGH. Curve (2) is valid when MUTE = LOW and the receiving amplifier
is driven; Vo(rms) = 150 mV; RL = 150 Ω asymmetrical.
The supply possibilities can be increased simply by setting the voltage drop over the circuit VLN to a higher value by means of resistor RVA connected
between REG and SLPE.
Fig.10 Typical current Ip available from VCC for peripheral circuitry with VCC ≥ 2.2 V.
V
CC
MIC+
MIC−
MIC−
MIC+
MIC−
(1)
MIC+
V
EE
MBH135
a. Magnetic or dynamic
microphone.
b. Electret microphone.
c. Piezoelectric microphone.
(1) May be connected to decrease the terminating impedance.
Fig.11 Alternative microphone arrangements.
1996 Apr 23
13
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
(1)
(2)
QR+
QR+
QR−
QR+
QR−
QR+
QR−
V
QR−
EE
MBH136
a. Dynamic earpiece
with less than 450 Ω
impedance.
b. Dynamic earpiece with
more than 450 Ω
impedance.
c. Magnetic earpiece
with more than 450 Ω
impedance.
d. Piezoelectric
earpiece.
(1) May be connected to prevent distortion (inductive load).
(2) Required to increase the phase margin (capacitive load).
Fig.12 Alternative receiver arrangements.
d
MBH137
R6 = ∞
0
∆G
v
(dB)
−2
−4
−6
48.7 kΩ 78.7 kΩ 110 kΩ 140 kΩ
0
20
40
60
80
100
120
140
(mA)
I
line
R9 = 20 Ω.
Fig.13 Variation of gain with line current, with R6 as a parameter.
14
1996 Apr 23
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
Table 1 Values of resistor R6 for optimum line loss compensation, for various usual values of exchange supply
voltage Vexch and exchange feeding bridge resistance Rexch; R9 = 20 Ω
R6 (kΩ)
V
exch (V)
Rexch = 400 Ω
Rexch = 600 Ω
Rexch = 800 Ω
Rexch = 1000 Ω
24
36
48
60
61.9
100
140
X
48.7
78.7
110
X
X
X
68
60.4
82
93.1
120
102
I
R1
620 Ω
LN
line
V
V
100 µF
CC
QR−
QR+
IR
R
o
L
MIC+
MIC−
DTMF
MUTE
600 Ω
V
i
C4
100 pF
R4
100 kΩ
GAR
TEA1068
100 µF
C7 1 nF
C1
GAS1
10 to 140 mA
R7
68 kΩ
10 µF
PD
V
C6
100 pF
GAS2
V
i
EE
REG AGC STAB SLPE
C3
4.7
µF
R5
3.6
kΩ
R9
20 Ω
R6
MBH138
Voltage gain is defined as; Gv = 20 log Vo/Vi . For measuring the gain from MIC+ and MIC−, the MUTE input should be LOW or open, for measuring
the DTMF input, MUTE should be HIGH. Inputs not under test should be open.
Fig.14 Test circuit for defining voltage gain of MIC+, MIC− and DTMF inputs.
1996 Apr 23
15
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
I
R1
line
620 Ω
100 µF
10 µF
LN
V
CC
QR−
QR+
IR
600 Ω
Z
V
o
L
MIC+
MIC−
DTMF
MUTE
10 µF
V
R4
100
kΩ
C4
100 pF
i
TEA1068
GAR
C7 1 nF
C1
GAS1
100 µF
10 to 140 mA
R7
C6
100 pF
PD
V
GAS2
EE
REG AGC STAB SLPE
C3
4.7
µF
R5
3.6
kΩ
R9
20 Ω
R6
MBH139
Voltage gain is defined as; Gv = 20 log Vo/Vi .
Fig.15 Test circuit for defining voltage gain of the receiving amplifier.
1996 Apr 23
16
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
APPLICATION INFORMATION
R1
C1
620 Ω
100 µF
R10
R3
13 Ω
130 kΩ
LN
V
CC
C5
100 nF
R11
IR
BAS11
(2x)
QR−
QR+
DTMF
from dial
and
control
circuits
C4
100 pF
R4
R3
3.92
telephone
line
MUTE
PD
TEA1068
BZW14
(2x)
GAR
1 nF
kΩ
C7
MIC+
MIC−
V
SLPE
GAS1 GAS2 REG
AGC
STAB
EE
R8
R7
R5
3.6 kΩ
C3
4.7 µF
C6
100 pF
390 Ω
R6
Z
bal
R9
20 Ω
MBH140
Typical application of the TEA1068, shown here with a piezoelectric earpiece and DTMF dialling. The bridge to the left and R10 limit the current into
the circuit and the voltage across the circuit during line transients. Pulse dialling or register recall require a different protection arrangement.
Fig.16 Application diagram.
1996 Apr 23
17
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
h
LN
V
V
DD
CC
DTMF
MUTE
PD
TONE
cradle
contact
PCD3310
TEA1068
M1
DP/FLO
V
V
EE
SS
telephone
line
BSN254A
MBA279 - 1
The dashed lines show an optional flash (register recall by timed loop break).
Fig.17 DTMF set with a CMOS DTMF dialling circuit.
1996 Apr 23
18
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
PACKAGE OUTLINES
DIP18: plastic dual in-line package; 18 leads (300 mil)
SOT102-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
b
2
18
10
M
H
pin 1 index
E
1
9
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.40
1.14
0.53
0.38
1.40
1.14
0.32
0.23
21.8
21.4
6.48
6.20
3.9
3.4
8.25
7.80
9.5
8.3
4.7
0.51
3.7
2.54
0.10
7.62
0.30
0.254
0.01
0.85
0.055 0.021 0.055 0.013
0.044 0.015 0.044 0.009
0.86
0.84
0.26
0.24
0.15
0.13
0.32
0.31
0.37
0.33
inches
0.19
0.020
0.15
0.033
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-10-14
95-01-23
SOT102-1
1996 Apr 23
19
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT163-1
075E04
MS-013AC
1996 Apr 23
20
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1996 Apr 23
21
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 23
22
Philips Semiconductors
Product specification
Versatile telephone transmission circuit
with dialler interface
TEA1068
NOTES
1996 Apr 23
23
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Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Fax. +31-40-2724825
SCDS48
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
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use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
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Printed in The Netherlands
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417021/10/ed/pp24
Date of release: 1996 Apr 23
9397 750 00804
Document order number:
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