TEA1103 [NXP]
Fast charge ICs for NiCd and NiMH batteries; 对于镍镉电池和镍氢电池快速充电芯片型号: | TEA1103 |
厂家: | NXP |
描述: | Fast charge ICs for NiCd and NiMH batteries |
文件: | 总28页 (文件大小:306K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1103; TEA1103T;
TEA1103TS
Fast charge ICs for NiCd and NiMH
batteries
1999 Jan 27
Preliminary specification
Supersedes data of 1997 Oct 09
File under Integrated Circuits, IC03
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
FEATURES
GENERAL DESCRIPTION
• Safe and fast charging of Nickel Cadmium (NiCd) and
Nickel Metal Hydride (NiMH) batteries
The TEA1103x are fast charge ICs which are able to fast
charge NiCd and NiMH batteries.
• Pin compatible with the TEA1102x, fast charge ICs for
LiIon, SLA, NiCd and NiMH batteries
The main fast charge termination for NiCd and NiMH
batteries are ∆T/∆t and peak voltage detection, both of
which are well proven techniques. The TEA1103x
automatically switches over from ∆T/∆t to peak voltage
detection if the thermistor fails or is not present. The ∆T/∆t
detection sensitivity is temperature dependent, thus
avoiding false charge termination. Three charge states
can be distinguished; fast, top-off and trickle.
• Three charge states for NiCd or NiMH; fast, top-off and
trickle or voltage regulation (optional)
• Adjustable fast charge current [0.5CA to 5CA nominal
(CA = Capacity Amperes)]
• DC top-off and pulsating trickle charge current (NiCd
and NiMH)
Several LEDs, as well as a buzzer, can be connected to
the TEA1103x for indicating battery insertion, charge
states, battery full condition and protection mode.
• Temperature dependent ∆T/∆t battery full detection
• Automatic switch-over to accurate peak voltage
detection (−1⁄4%) if no NTC is applied
The TEA1103x are contained in a 20-pin package and are
manufactured in a BiCMOS process, essentially for
integrating the complex mix of requirements in a single
chip solution. Only a few external low cost components are
required in order to build a state of the art charger.
• Possibility to use both ∆T/∆t and peak voltage detection
as main fast charge termination
• Support of inhibit during all charging states
• Manual refresh with regulated adjustable discharge
current (NiCd and NiMH)
The TEA1103x are pin compatible with the TEA1102x, fast
charge ICs for LiIon, SLA, NiCd and NiMH batteries.
• Voltage regulation in the event of no battery
• Support of battery voltage based charge indication and
buzzer signalling at battery insertion, end of refresh and
at full detection
• Single, dual and separate LED outputs for indication of
charge status state
• Minimum and maximum temperature protection
• Time-out protection
• Short-circuit battery voltage protection
• Can be applied with few low-cost external components.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
plastic dual in-line package; 20 leads (300 mil)
TYPE
NUMBER
NAME
DIP20
VERSION
TEA1103
SOT146-1
SOT163-1
SOT339-1
TEA1103T
TEA1103TS
SO20
plastic small outline package; 20 leads; body width 7.5 mm
SSOP20
plastic shrink small outline package; 20 leads; body width 5.3 mm
1999 Jan 27
2
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
QUICK REFERENCE DATA
SYMBOL
VP
IP
PARAMETER
supply voltage
supply current
CONDITIONS
MIN.
5.5
TYP.
MAX.
11.5
UNIT
−
V
outputs off
−
−
4
−
−
mA
%
∆VNTC/VNTC temperature rate dependent
(∆T/∆t) detection level
VNTC = 2 V;
Tj = 0 to 50 °C
−0.25
∆Vbat/Vbat
voltage peak detection level with Vbat = 2 V;
−
−0.25
−
%
respect to top value
Tj = 0 to 50 °C
IVbat
input current battery monitor
Vbat = 0.3 to 1.9 V
−
−
1
−
−
nA
V
Vbat(l)
voltage at pin 19 for detecting low
battery voltage
0.30
IIB
battery charge current
fast charge
10
−
−
100
−
µA
µA
µA
top-off mode
3
IIB(max)
maximum battery charge current voltage regulation full
NiCd and NiMH battery
−
10
−
IIB(Lmax)
fosc
maximum load current
oscillator frequency
regulating voltage
no battery
−
40
−
µA
kHz
V
10
−
−
200
−
Vreg
NiCd and NiMH
(pin Vstb open-circuit)
1.325 or
Vstb
open battery
−
1.9
−
V
1999 Jan 27
3
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V
V
R
OSC
14
bat
19
stb
1
ref
20
fast
charge off current current
1.25/R 3 µA 10 µA 40 µA
top standby load
LS
OSC
PWM
SET
PROTECTION
NTC
ref
CHARGE CONTROL
AND
OUTPUT DRIVERS
4.25 V
15
17
R Q
S
A2
present
PWM
LS
3.3 V
battery
low
V
bat
0.3 V
V
reg
T
min
2.8 V
4.25 V
end
refresh
18
10
A1
A3
AO
1 V
156
kΩ
4×
T
max
1 V
9
no-
battery
MTV
1.325 V/V
1.9 V
no-
battery
stb
RFSH
A4
12
kΩ
1.9 V
NiCd
NIMH
refresh
100 mV
T
cut-off
0.75 V
36
kΩ
2
IB
TEA1103
4
5
PSD
LED
CONTROL LOGIC
TIMER
AND
8
CHARGE
STATUS
INDICATION
NTC
V
bat
6
7
POD
PTD
DA/AD
CONVERTER
SUPPLY
BLOCK
12
13
16
3
11
FCT
MBH547
V
V
V
S
GND
P
sl
ahdnbok,uflapegwidt
Fig.1 Block diagram.
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
PINNING
SYMBOL
Vstb
PIN
DESCRIPTION
1
standby regulation voltage input
(NiCd and NiMH)
IB
2
3
charge current setting
ground
GND
PSD
LED
POD
PTD
NTC
MTV
RFSH
FCT
handbook, halfpage
V
R
V
1
2
20
19
stb
IB
ref
4
program pin sample divider
LED output
5
bat
6
program pin oscillator divider
program pin time-out divider
temperature sensing input
maximum temperature voltage
refresh input/output
3
18 AO
17 LS
GND
PSD
LED
POD
PTD
NTC
7
4
8
V
5
16
15
14
13
12
11
S
TEA1103
9
PWM
OSC
6
10
11
7
fast charge termination and
V
sl
battery chemistry identification
8
VP
12
13
14
15
16
17
18
19
20
positive supply voltage
switched reference voltage output
oscillator input
V
P
9
MTV
Vsl
10
RFSH
FCT
OSC
PWM
VS
MBH539
pulse width modulator output
stabilized reference voltage
loop stability pin
LS
AO
Vbat
Rref
analog output
single-cell battery voltage input
reference resistor pin
Fig.2 Pin configuration.
1999 Jan 27
5
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
battery to be charged to nearly 100% before the system
switches over to standby.
INTRODUCTION
All battery types are initially fast charged with an
adjustable high current. Fast charge termination depends
upon the battery type. With NiCd and NiMH batteries the
main fast charge termination will be the ∆T/∆t (temperature
detection) and/or peak voltage detection.
After the battery has been charged to nearly 100% by the
top-off period, discharge of the battery (caused by a load
or by the self-discharge) can be avoided by voltage
regulation or by trickle charge.
If batteries are charged in combination with a load, the
TEA1103x can be programmed to apply voltage regulation
during the standby mode. In this way, discharge of the
battery caused by self-discharge or by an eventual load is
avoided. The regulating voltage is adjustable to the
voltage characteristic of the battery. For battery safety the
charge current is limited and the temperature is monitored
during voltage regulation. If a trickle charge is applied, the
self-discharge of the battery will be compensated by a
pulsating charge current.
The fast charge period is followed by a top-off period for
NiCd and NiMH batteries. During the top-off period the
NiCd and NiMH batteries are charged to maximum
capacity by reduced adjustable charge current.
The top-off period ends after time-out or one hour
respectively.
After the top-off period, the TEA1103x switches over to the
standby mode. For NiCd and NiMH batteries either the
voltage regulation or trickle charge mode can be selected.
The voltage regulation mode is selected when the battery
includes a fixed load. Trickle charge prevents a discharge
of the battery over a long period of time.
To avoid the so called ‘memory effect’ in NiCd batteries, a
refresh can be manually activated. The discharge current
is regulated by the IC in combination with an external
power transistor. After discharging the battery to 1 V per
cell, the system automatically switches over to fast charge.
Charging principles
CHARGING NiCd/NiMH BATTERIES
FUNCTIONAL DESCRIPTION
Control logic
Fast charging of the battery begins when the power supply
voltage is applied and at battery insertion.
During fast charge of NiCd and NiMH batteries, the battery
temperature and voltage are monitored. Outside the
initialized temperature and voltage window, the system
switches over to the top-off charge current.
The main function of the control logic is to support the
communication between several blocks. It also controls
the charge method, initialization and battery full detection.
The block diagram of the TEA1103x is illustrated in Fig.1.
The TEA1103x supports detection of fully charged NiCd
and NiMH batteries by either of the following criteria:
Conditioning charge method and initializations
• ∆T/∆t
At system switch-on, or at battery insertion, the control
logic sets the initialization mode in the timer block.
After the initialization time the timer program pins can be
used to indicate the charging state using several LEDs.
The charge method is defined at the same time by the
following methods:
• Voltage peak detection.
If the system is programmed with ∆T/∆t and Vpeak or, ∆T/∆t
or Vpeak as the main fast charge termination, it
automatically switches to voltage peak detection if the
battery pack is not provided with a temperature sensing
input (NTC). In this way both packages, with and without
temperature sensor, can be used randomly independent of
the applied full detection method. Besides ∆T/∆t and/or
voltage peak detection, fast charging is also protected by
temperature cut-off and time-out.
• If the FCT pin is floating, the system will charge the
battery according to the charge characteristic of NiCd
and NiMH batteries.
• The standby charge method (NiCd and NiMH), trickle
charge or voltage regulation, is defined by the input pin
V
stb. By biasing this voltage with a set voltage, the output
To avoid false fast charge termination by peak voltage
detection or ∆T/∆t, full detection is disabled during a short
hold-off period at the start of a fast charge session.
After fast charge termination, the battery is extra charged
by a top-off period. During this period of approximately one
hour, the charge current is lowered thus allowing the
voltage will be regulated to the Vstb set voltage. If this pin
is connected to VS, or no NTC is connected the system
applies trickle charge.
1999 Jan 27
6
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
If pin RFSH is connected to ground by depressing the
switch, the TEA1103x discharges the battery via an
external transistor connected to pin RFSH. The discharge
current is regulated with respect to the external (charge)
sense resistor (Rsense). End-of-discharge is reached when
the battery is discharged to 1 V per cell. Refreshing the
battery can only be activated during charging of NiCd and
NiMH batteries.
The inhibit mode has the main priority. This mode is
activated when the Vstb input pin is connected to ground.
Inhibit can be activated at any charge/discharge state,
whereby the output control signals will be zero, all LEDs
will be disabled and the charger timings will be set on hold.
Table 1 gives an operational summary.
Table 1 Functionality of program pins
FUNCTION
FCT
NTC
RFSH
Vstb
Inhibit
X(1)
not low(2)
floating
high
X(1)
X(1)
X(1)
low
not low
not low
not low
not low
high
Refresh
low
∆T/∆t detection
note 3
note 3
note 4
X(1)
not low
not low
not low
not low
not low
not low
∆T/∆t and voltage peak detection
Voltage peak detection
not low
not low
not low
not low
Trickle charge at standby
note 4
note 3
not low
floating(5)
Voltage regulation at standby
Notes
1. Where X = don’t care.
2. Not low means floating or high.
3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.
4. The NTC voltage is outside the window for NTC detection.
5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification.
Rref in the event of fast charge and by an internal bias
Supply block
current source in the event of top-off and trickle charge
(IIB), see Fig.1. The positive node of Rb will be regulated to
zero via error amplifier A1, which means that the voltage
across Rb and Rsense will be the same. The fast charge
current is defined by the following equation:
The supply block delivers the following outputs:
• A power-on reset pulse to reset all digital circuitry at
battery insertion or supply switch-on. After a general
reset the system will start fast charging the battery.
• A 4.25 V stabilized voltage source (VS) is externally
available. This source can be used to set the thermistor
biasing, to initialize the programs, to supply the external
circuitry for battery voltage based charge indication and
to supply other external circuitry.
I
fast × Rsense = Rb × Iref
(1)
The output of amplifier A1 is available at the loop stability
pin LS, consequently the time constant of the current loop
can be set. When Vpeak (NiCd and NiMH) is applied, the
current sensing for the battery voltage will be reduced,
implying that the charge current will be regulated to zero
during:
• A 4.25 V bias voltage (Vsl) is available for use for more
indication LEDs. This output pin will be zero during the
initialization period at start-up, thus avoiding any
interference of the extra LEDs when initializing.
tsense = 210 × POD × tosc
(2)
Actually battery voltage sensing takes place in the last
oscillator cycle of this period.
Charge control
The charge current is sensed via a low-ohmic resistor
(Rsense), see Fig.4. A positive voltage is created across
resistor Rb by means of a current source Iref which is set by
1999 Jan 27
7
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
To avoid modulation on the output voltage, the top-off
charge current is DC regulated, defined by the following
equation:
Timer
The timing of the circuit is controlled by the oscillator
frequency.
I
top – off × Rsense = Rb × 3 × 10–6
(3)
The timer block defines the maximum charging time by
‘time-out’. At a fixed oscillator frequency, the time-out time
can be adapted by the Programmable Time-out Divider
(PTD) using the following equation.
where:
ttop – off = 227 × TOD × tosc
(4)
ttime – out = 226 × POD × PTD × tosc
(6)
The top-off charge current will be approximately 0.15CA,
which maximizes the charge in the battery under safe and
slow charging conditions. The top-off charge period will be
approximately one hour, so the battery will be extra
charged with approximately 0.15 Q. In this way the battery
is fully charged before the system switches over to
standby.
The time-out timer is put on hold by low voltage,
temperature protection and during the inhibit mode.
The Programmable Oscillator Divider (POD) enables the
oscillator frequency to be increased without affecting
the sampling time and time-out. Raising the oscillator
frequency will reduce the size of the inductive components
that are used.
When pin 1 (Vstb) is connected to VS, or no NTC is
connected the system compensates the (self) discharge of
the battery by trickle charge. The trickle charge current will
be pulsating, defined by the following equation:
At fast charging, after battery insertion, after refresh or
supply interruption, the full detector will be disabled for a
period of time to allow a proper start with flat or inverse
polarized batteries. This hold-off period is disabled at fast
charging by raising pin Vstb to above ±5 V (once).
–6
15
16
I
trickle × Rsense = R ×
× 10
(5)
------
b
So for test options it is possible to slip the hold-off period.
The hold-off time is defined by the following equation:
During the non current periods at trickle charge the charge
current is regulated to zero, so that the current for a load
connected in series across the battery with the sense
resistor will be supplied by the power supply and not by the
battery.
thold – off = 2–5 × ttime – out
(7)
Table 2 gives an overview of the settings of timing and
discharge/charge currents.
If at pin 1 (Vstb) a reference voltage is set in accordance
with the specification, and no NTC is connected the charge
mode will switch over from current to voltage regulation
after top-off. The reference regulating voltage can be
adjusted to the battery characteristic by external resistors
connected to pin Vstb
.
This reference voltage has to be selected in such a way
that it equals the rest voltage of the battery. By using
voltage regulation, the battery will not be discharged at a
load occurrence. If the Vstb input pin is floating, the
TEA1103x will apply voltage regulation at 1.325 V during
the standby mode (NiCd and NiMH). The current during
voltage regulation is limited to 0.5CA. If the battery charge
current is maximized to 0.5CA for more than 2 hours
charging will be stopped. Moreover, if the temperature
exceeds Tmax, charging will be stopped completely.
As voltage regulation is referred to one cell, the voltage on
the Vbat pin must be the battery voltage divided by the
number of cells (NiCd and NiMH).
When charging, the standby mode can only be entered
after a certain period of time depending on time-out.
To support full test of the TEA1103x at application, the
standby mode is also entered when Vbat < Vbat(l) at top-off.
1999 Jan 27
8
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
Table 2 Timing and current formulae
SYMBOL
DESCRIPTION
FORMULAE
tosc
Tsampling (∆T/∆t)
Tsampling (Vpeak
ttop-off
timing
see Fig.3
217 × POD × PSD × tosc
216 × POD × tosc
NTC voltage sampling frequency
battery voltage sampling frequency
)
227 × POD × tosc
226 × POD × PTD × tosc
2−5 × ttime-out
ttime-out
thold-off
tLED
214 × POD × tosc
inhibit or protection
210 × POD × tosc
tsense
221 × POD × PTD × tosc
tswitch
Ifast
charge/discharge currents
Rb
V ref
×
----------------- ---------
Rsense Rref
Itop-off
R b
× 3 × 10–6
-----------------
R sense
Itrickle
Rb
–6
15
×
× 10
----------------- ------
Rsense 16
Iload-max
Rb
× 40 × 10–6
-----------------
Rsense
IRFSH
100 mV
--------------------
Rsense
1999 Jan 27
9
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
PTD programming
:1
:2
:4
12.5
(R23 min)
125
(R23 max)
(GND) (n.c.) (+V )
S
200
osc
f
(kHz)
prefered
oscillator
range
160
(POD = +V )
S
C4
(pF)
120
80
40
0
68
prefered
oscillator
range
100
(POD = n.c.)
150
220
prefered
oscillator
range
390
560
820
1500
(POD = GND)
0
30
60
90
120
t
150
180 10
30
50
70
90
110
R23 (kΩ)
130
(min)
time-out
MGD280
Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter.
• Fast charge (LED on)
LED indication
• 100% or refresh (LED off)
With few external components, indication LEDs can be
connected to the program pins and the LED pin of the
TEA1103x. These program pins change their function from
an input to an output pin after a short initialization time at
system switch-on or battery insertion. Output pin Vsl
enables the external LEDs to be driven and avoids
interaction with the programming of the dividers during the
initialization period.
• Protection or inhibit (LED floating).
The refresh can be indicated by an extra LED connected
to pin 4 (PSD). A buzzer can also be driven from the
TEA1103x to indicate battery insertion end of refresh or full
battery.
AD/DA converter
The applied LEDs indicate:
• Protection
When battery full is determined by peak voltage detection,
the Vbat voltage is sampled at a rate given by the following
equation:
• Refresh
sampling (Vpeak) = 216 × POD × tosc
(8)
• Fast charge
• 100%
t
The analog value of a Vbat sample is then digitized and
• No-battery.
stored in a register. On the following sample, the digitized
value is converted back to the analog value of Vbat and
compared with the ‘new’ Vbat sample.
The LED output pin can also indicate the charging state by
one single LED. The indication LED can be connected
directly to the LED output. This single LED indicates:
1999 Jan 27
10
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
At an increase of the battery voltage the 14-bit
Output drivers
Analog-to-Digital Converter (ADC) is refreshed with this
new value. Therefore, the digitized value always
represents the maximum battery voltage. A decreased
The charge current regulation signal is available at two
output pins, AO and PWM.
V
value.
bat voltage is not stored, but is compared to the stored
ANALOG OUTPUT
The analog control voltage output at pin 18 (AO) can be
used to drive an opto-coupler in mains separated
applications when an external resistor is connected
between AO and the opto-coupler. The maximum current
through the opto-coupler diode is 2 mA. The voltage gain
of amplifier A2 is typical 11 dB (times 3.5). The DC voltage
transfer is given by the following equation:
Full is detected when the voltage decrease of Vbat is 1⁄4%
of the stored peak battery value. To avoid interference due
to the resistance of the battery contacts during battery
voltage sensing, the charge current is regulated to zero
during t = 210 × POD × tosc, via the regulation pins AO and
PWM. At the last period, the Vbat voltage is sensed and
stored in a sample-and-hold circuit. This approach
ensures very accurate detection of the battery full
condition (minus 1⁄4%).
V
AO = 3.5 × (VLS − 1.35).
The AO output can be used for:
When battery full is determined by ∆T/∆t, the voltage on
the NTC pin is used as the input voltage to the AD/DA
converter. The sampling time at ∆T/∆t sensing is given by
the following equation:
• Linear (DC) applications
• Not mains isolated SMPS with a separate controller
• Mains isolated SMPS, controlled by an opto-coupler.
= 217 × POD × PSD × tosc
(9)
∆T
∆t
tsampling
-------
PULSE WIDTH MODULATOR (PWM)
The LS voltage is compared internally with the oscillator
voltage to deliver a pulse width modulated output at PWM
(pin 15) to drive an output switching device in a SMPS
converter application via a driver stage. The PWM output
is latched to prevent multi-pulsing. The maximum duty
factor is internally fixed to 79% (typ.). The PWM output can
be used for synchronization and duty factor control of a
primary SMPS via a pulse transformer.
After this initialized sample time the new temperature
voltage is compared to the preceding AD/DA voltage and
the AD/DA is refreshed with this new value. A certain
increase of the temperature is detected as full battery,
depending on the initialization settings. The decision of full
detection by ∆T/∆t or Vpeak is digitally filtered thus avoiding
false battery full detection.
1999 Jan 27
11
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); note 1
SYMBOL
Voltages
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
positive supply voltage
−0.5
−
−
−
−
+11.5
V
VoLED
Vn
output voltage at pin 5
voltage at pins PWM, LS and NTC
voltage at pin 2
−0.5
−0.5
−0.5
+15
+VS
+1.0
V
V
V
VIB
Currents
IVS
current at pin 16
−3
−1
−
−
−
−
−
−
−
−
+0.01
+0.3
12
mA
mA
mA
mA
mA
mA
mA
µA
IVsl
current at pin 13
IoLED
IAO
output current at pin 5
output current at pin 18
output current at pin 15
current at pin 20
−10
−15
−1
−
+0.05
+14
+0.01
30
IoPWM
IRref
IP
positive supply current
supply standby current
Tj < 100 °C
IP(stb)
VP = 4 V
−
35
45
Dissipation
Ptot
total power dissipation
SOT146-1
Tamb = 85 °C
−
−
−
−
−
−
1.2
W
W
W
SOT163-1
0.6
SOT339-1
0.45
Temperatures
Tamb
Tj
operating ambient temperature
junction temperature
−20
−
−
−
−
+85
°C
°C
°C
150
Tstg
storage temperature
−55
+150
Note
1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the
voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not
violated; current ratings are valid provided that the power rating is not violated.
QUALITY SPECIFICATION
In accordance with the general quality specification for integrated circuits: “SNW-FQ-611E”.
1999 Jan 27
12
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
CHARACTERISTICS
VP = 10 V; Tamb = 25 °C; Rref = 62 kΩ; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies; pins VP, VS, Rref and Vsl
VP
supply voltage
5.5
−
11.5
V
IP
supply current
outputs off; VP = 11.5 V
VP = 4 V
−
4
6
mA
Istb
standby current
−
35
−
45
µA
Vclamp
Vstart
VLSP
VS
clamping voltage (pin 12)
start voltage
Iclamp = 30 mA
11.5
6.1
5.1
4.14
4.05
1.21
0
12.8
6.7
V
6.4
V
low supply protection level
source voltage (stabilized)
LED source voltage
reference voltage
5.3
5.5
V
IS = 2 mA
4.25
4.25
1.25
±60
4.36
4.45
1.29
±120
V
VSL
Vref
ILED = 50 µA
V
Iref = 20 µA; VP = 10 V
V
TCVref
temperature coefficient of the Tamb = 0 to 45 °C;
reference voltage ref = 20 µA; Vref = 1.25 V
power supply rejection ratio of f = 100 Hz; VP = 8 V;
ppm/K
I
∆Vref/∆VP
∆Vref
−46
−
−
−
−
−
dB
mV
µA
the reference voltage
∆VP = 2 V (p-p)
load rejection of source
voltage
∆IS = 20 mA; VP = 10 V
5
IRref
current range of reference
resistor
10
100
Charge current regulation; pins IB and Rref
IIB/Iref
fast charge ratio
VIB = 0
I
ref = 10 µA
0.93
0.93
−2
1.03
1.0
−
1.13
1.07
+2
I
ref = 100 µA
VthIB
threshold voltage at pin IB
Tamb = 25 °C
mV
mV
µA
Tamb = 0 to 45 °C
top-off mode; VIB = 0
−3
−
+3
IIB
charge current
2.6
9
3.2
10.5
3.8
12
IIB(max)
maximum charge current
voltage regulation full
µA
NiCd/NiMH battery; VIB = 0
IIB(Lmax)
IIB(LI)
maximum load current
input leakage current
open battery; VIB = 0
currentless mode
34
42
50
µA
−
−
170
nA
Refresh; pin RFSH
VRsense
sense resistor voltage
75
100
125
mV
VIB
Irefresh
=
; refresh
-----------------
Rsense
mode; Irefresh = 18 mA
NiCd/NiMH
VRFSH
Vbat
refresh voltage for
programming start of refresh
0
−
250
mV
V
voltage at pin Vbat for
NiCd/NiMH
0.96
1.0
1.04
detecting end of refresh
1999 Jan 27
13
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
1.4
TYP.
MAX.
2.6
UNIT
mA
Isource(max)
maximum source current
VIB = 75 mV; VP = 10 V
VRFSH = 2.7 V;
2
Tamb = 25 °C
VRFSH(max)
VRFSH(off)
maximum refresh voltage
IRFSH = 1 mA
2.7
−
−
V
voltage at pin RFSH when
refresh is off
700
770
840
mV
Temperature related inputs; pins NTC and MTV
VNTCh
input voltage at pin NTC for
detecting high temperature
pin MTV open-circuit
MTV setting
0.9
1
1.1
V
0.95MTV MTV
1.05MTV V
VNTCh(hy)
VNTCl
hysteresis of VNTCh
−
80
−
mV
input voltage at pin NTC,
detecting low temperature
2.7
2.8
2.9
V
VNTCl(hy)
VNTC(co)
hysteresis of VNTCl
−
75
−
mV
V
input voltage at pin NTC for
detecting temperature cut-off
0.7MTV 0.75MTV 0.8MTV
VNTC(bat)
maximum input voltage at
pin NTC for detecting battery
with NTC
3.22
3.3
3.38
V
INTC
input current at pin NTC
voltage level at pin MTV
VNTC = 2 V
−5
−
+5
µA
V
VMTV
default (open-circuit)
0.95
0.5
−
1
1.05
2.5
−
−
V
∆VNTC/VNTC ∆T/∆t detection level
VNTC = 2 V; Tj = 0 to 50 °C
−0.25
%
Voltage regulation
Vreg
regulation voltage
NiCd and NiMH;
pin Vstb open-circuit
1.34
1.325
1.40
V
V
NiCd and NiMH;
0.99Vstb Vstb
1.01Vstb
Vstb = 1.5 V
open battery
1.86
0
1.9
1.94
V
TCVreg
gm
temperature coefficient of
regulation voltage
Vreg = 1.325 V;
±60
±120
ppm/K
Tamb = 0 to 45 °C
transconductance of amplifier Vbat = 1.9 V;
−
2.0
−
mA/V
A3
no battery mode
Program pin Vstb
Vstb
open voltage at pin Vstb
1.30
0
1.325
1.35
0.8
V
V
Vstb(im)
voltage at pin Vstb for
−
programming inhibit mode
Vstb(st)
voltage at pin Vstb for
programming voltage
regulation at standby
NiCd and NiMH
NiCd and NiMH
1.0
2.6
−
−
2.2
VS
V
V
Vstb(tc)
voltage at pin Vstb for
programming trickle charge at
standby
1999 Jan 27
14
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Program pins; PSD, POD and PTD
V4,6,7
voltage level at pins PSD,
POD or PTD
default (open-circuit)
1.9
2.1
2.3
V
V4,6,7(1)
voltage level at pins PSD,
POD or PTD for programming
the divider = 1
0
−
−
−
1.2
2.5
VS
V
V
V
V4,6,7(2)
voltage level at pins PSD,
POD or PTD for programming
the divider = 2
1.6
3.1
V4,6,7(4)
voltage level at pins PSD,
POD or PTD for programming
the divider = 4
IPODsink
IPTDsink
IPSDsink
ILI
protection current for
multi-LED indication
VPOD = 1.5 V
VPTD = 1.5 V
VPSD = 1.5 V
8
8
8
0
10
10
10
−
12
12
12
50
mA
mA
mA
µA
full battery current for
multi-LED indication
refresh current for multi-LED
indication
input leakage current
VPOD = 4.25 V;
VPTD = 4.25 V;
VPSD = 4.25 V
Program pin FCT
VFCT(or)
VFCT(and)
VFCT
voltage level for programming NiCd and NiMH
∆T/∆t or Vpeak as fast charge
termination
0.0
3.7
−
−
3.3
VS
V
V
voltage level for programming NiCd and NiMH
∆T/∆t and Vpeak as fast charge
termination
voltage level at pin FCT
default (open-circuit)
2.3
0
2.6
2.9
2.5
V
V
Program pin LED
VLED(m) output voltage level for
−
programming multi-LED
indication
VLED(s)
output voltage level for
programming single LED
indication
3.1
−
VP
V
Isink(max)
ILI(LED)
maximum sink current
input leakage current
VLED = 1.5 V
VLED = 10 V
8
0
0
−
10
−
12
70
5
mA
µA
µA
V
V
LED = 0.6 V
−
Vo(max)
maximum output voltage
−
15
1999 Jan 27
15
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Output drivers; AO, LS and PWM
IAO(source)
IAO(sink)
gm1
analog output source current VAO = 3 V (p-p);
VLS = 2.8 V
VAO = 3 V (p-p);
LS = 1.2 V
−9
−
−
0
−
−
−
−
mA
analog output sink current
50
−
µA
V
transconductance of amplifier VIB = 50 mV
A1
250
72
µA/V
dB
Gv1,2
voltage gain of amplifiers
A1 and A2
VAO = 3 V (p-p)
−
Gv2
voltage gain of amplifier A2
VAO = 2 V (p-p)
VLS = 2.25 V
−
11
dB
ILS(source)
maximum source current
(pin LS)
−25
−21
−16
µA
ILS(sink)
maximum sink current
(pin LS)
VLS = 2.25 V
16
21
25
µA
IOH(PWM)
IOL(PWM)
δPWM
HIGH level output current
LOW level output current
maximum duty factor
VPWM = 3 V
−19
10
−
−15
14
−11
18
−
mA
mA
%
VPWM = 0.7 V
79
Battery monitor; Vbat
IVbat
Vbat
battery monitor input current
Vbat = 1.85 V
−
1
−
nA
V
voltage range of Vpeak
detection
0.3
−
2
∆Vbat/Vbat
Vpeak detection level with
respect to top level
Vbat = 1.85 V;
Tj = 0 to 50 °C
−
−
−0.25
−
−
%
∆Vbat
voltage resolution for Vpeak
0.6
mV
Protections; Vbat
Vbat(l) maximum voltage at pin Vbat
0.25
0.30
0.35
V
for detecting low battery
voltage
Oscillator; pin OSC
Vosc(H) HIGH level oscillator switching
−
2.5
1.5
23
−
V
voltage
Vosc(L)
fosc(min)
fosc(max)
LOW level oscillator switching
voltage
−
−
V
minimum oscillator frequency Rref = 125 kΩ;
20.9
158
25.1
190
kHz
kHz
Cosc = 400 pF
maximum oscillator frequency Rref = 12.5 kΩ;
174
Cosc = 400 pF
1999 Jan 27
16
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L1
V
(DC)
TR1
BD231
I
(SMPS only)
D8
7 to 18 V
400 µH
R3
BYV28
R24
80 kΩ
(0.1%)
1.5 kΩ only for
R15
270 Ω
(only for
more than
3 cells
R1
1
kΩ
TR3
BC337
V
(DC)>13V
I
C3 100 nF
V
V
V
R4 3.9 kΩ
sl
P
S
D1
13
5
12
16
8
BYD74D
D4
R16
4.25 V
LED
single
multi
LED
8.2 kΩ
R19
75 kΩ
P1
T
R5
750
Ω
fast
D5
33 kΩ
V
NTC
NTC
MTV
max
S
:4
:1
R6
POD
10 kΩ
adjust.
R18
24 kΩ
R22
R17 130 kΩ
6
7
o
(25 C)
no-
battery
33 kΩ
47 kΩ
protection
GND
9
D2
D3
R7
33 kΩ
R20
R21
V
S
D6
16 kΩ
15 kΩ
12 kΩ
:4
:1
R8
PTD
FCT
11
33 kΩ
∆T/∆t
and
∆T/∆t
or
100%
GND
BAW62
R9
33 kΩ
C1
100 µF
V
V
peak
peak
LOAD
C5
470
µF
TEA1103
V
V
S
stb
D6
V
1
19
20
14
3
reg
adjust.
:4
:1
R10
PSD
4
NiCd
P2
33 kΩ
NiMH
3/6/9 cell
refresh
GND
47 kΩ
V
bat
R11
PWM
15
SMPS mode
linear mode
TR2
BC337
NiCd 3
NiMH 3
NiCd 6
NiMH 6
NiCd 9
AO
R
ref
18
10
NiMH 9
TR4
TIP110
RFSH
R2
62 Ω
OSC
GND
(3)
R26
LS
IB
R23
62 kΩ
(1A fast
charge)
17
2
8 kΩ
(0.1%)
R28
10 kΩ
(0.1%)
C2
1.5 nF
R25
40 kΩ
(0.1%)
refresh
C4
220
pF
R27
R12
0 Ω
8 kΩ
(0.1%)
6 kΩ
R13(2)
5.1 kΩ
(0.15A top off)
(R
)
b
R
sense
(1A refresh)
R14 0.1 Ω(1)
MBH545
100 mV
100 mV
(1) R14 =
or R14 =
if not applicable.
--------------------
Irefresh
-----------------------------
Ifast – charge
R14 × Itop – off
(2) R13 =
(3) R23 =
------------------------------------
3 µA
ahdnbok,uflapegwidt
1.25 × R13
-----------------------------------------------
R14 × Ifast – charge
Fig.4 Basic test board diagram.
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
(D2 for more than 3 NiCd cells)
TR1 BD231
+ battery
V (DC)
I
7 to 11.5 V
(R
supply
= 270 Ω for more than 3 NiCd cells)
R10
200 kΩ
(1%)
R2
1.5
kΩ
R1
1 kΩ
C3
V
V
P
sl
13
12
100 nF
D1
:4
V
S
LED
16
4.25 V
5
6
V
S
R6
10 kΩ
NTC
MTV
FCT
POD
8
9
:1
:4
GND
R7
V
S
PTD
PSD
NiCd/NiMH = ∞
7
4
:1
GND
11
1
C1
100 µF
C5
470 µF
TEA1103
V
S
:4
:1
V
stb
NiCd
NiMH
3 cells
GND
V
bat
PWM
AO
19
20
14
3
15
18
TR2
BC337
R
ref
RFSH
LS
10
17
2
R3
180 Ω
OSC
GND
C2 1.5 nF
IB
C4
220 pF
R8
R9
100 kΩ
(0.1%)
62 kΩ
(0.5 A
fast
(f
=
R4
osc
75 kHz)
(R )
b
5.1 kΩ
(75 mA top off)
charge)
R5 0.22 Ω
− battery
R
MBH546
sense
Fig.5 Linear application diagram.
18
1999 Jan 27
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
TR4
D8
L1
refresh
C5
+BAT
D1
TR1
R24
LIN
D9
D10
R30
R1
TR3
R25
C1
+V
R28
in
P2
V
stb
R26 R27
R10
R23
R5
R15
R4R3
number
of
I
b
D7
R11
refresh
V
1
bat
1L 2L 3L
cells
C7
+V
LIN
C2
fast-charge
R13
D4
D5
D6
TR2
R2
s
PWM
R6
V
C6
sl
protection
MTV
R19
R7
R12 FCT
R8
C3
NTC
100%
SLA
Li-Ion
dT/dt or V
dT/dt and V
P1
R9
R22
R21
R20
R18
R16
NTC
no-battery
R17
GND
D3
D2
−V
R14
−BAT
in
V
sense
TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN
MBH073
This test board (designed for the TEA1102x) can also be used for the TEA1103x.
Fig.6 Component side of printed-circuit board (test board).
1999 Jan 27
19
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
86.35
81.28
MBH072
Dimensions in mm.
Fig.7 Track side of printed-circuit board (test board).
1999 Jan 27
20
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
+V
+battery
TR1
R1
TR2
R8
in
R10
C5
1
R3
PSD
D1
R4
R9
R6
C2
R2
POD
PTD
R7
:1 :4
C1
C4
−battery
C3
R5
−V
in
MBH071
This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.
Fig.8 Component side of printed-circuit board (linear application).
MBH070
This printed-circuit board (designed for the TEA1102x) can also be used for the TEA1103x.
Fig.9 Track side of printed-circuit board (linear application).
1999 Jan 27
21
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
PACKAGE OUTLINES
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
M
H
20
11
pin 1 index
E
1
10
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
A
A
A
(1)
(1)
Z
1
2
UNIT
mm
b
b
c
D
E
e
e
1
L
M
M
H
w
1
E
max.
min.
max.
max.
1.73
1.30
0.53
0.38
0.36
0.23
26.92
26.54
6.40
6.22
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
2.0
0.068
0.051
0.021
0.015
0.014
0.009
1.060
1.045
0.25
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.078
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-05-24
SOT146-1
SC603
1999 Jan 27
22
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT163-1
075E04
MS-013AC
1999 Jan 27
23
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
SOT339-1
D
E
A
X
c
H
v
M
A
y
E
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.
8o
0o
0.21
0.05
1.80
1.65
0.38
0.25
0.20
0.09
7.4
7.0
5.4
5.2
7.9
7.6
1.03
0.63
0.9
0.7
0.9
0.5
mm
2.0
0.65
0.25
1.25
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
93-09-08
95-02-04
SOT339-1
MO-150AE
1999 Jan 27
24
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
SOLDERING
Introduction
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
• For packages with leads on two sides and a pitch (e):
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
300 and 400 °C, contact may be up to 5 seconds.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Surface mount packages
REFLOW SOLDERING
MANUAL SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Jan 27
25
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
MOUNTING
PACKAGE
WAVE
REFLOW(1) DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
suitable(2)
−
suitable
Surface mount
HLQFP, HSQFP, HSOP, SMS
PLCC(4), SO
not suitable(3)
suitable
suitable
suitable
suitable
suitable
−
−
−
−
−
suitable
LQFP, QFP, TQFP
SQFP
not recommended(4)(5)
not suitable
not recommended(6)
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 27
26
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd and NiMH
batteries
TEA1103; TEA1103T;
TEA1103TS
NOTES
1999 Jan 27
27
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© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465002/750/03/pp28
Date of release: 1999 Jan 27
Document order number: 9397 750 04794
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