TEA1110A [NXP]
Low voltage versatile telephone transmission circuit with dialler interface; 低压多功能电话传输线路与拨号器界面
| 型号： | TEA1110A |
| 厂家： | 
NXP |
| 描述： | Low voltage versatile telephone transmission circuit with dialler interface |
| 文件： | 总20页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1110A
Low voltage versatile telephone
transmission circuit with dialler
interface
1997 Apr 22
Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
FEATURES
APPLICATION
• Low DC line voltage; operates down to 1.6 V (excluding
• Line powered telephone sets, cordless telephones, fax
voltage drop over external polarity guard)
machines, answering machines.
• Voltage regulator with adjustable DC voltage
• Provides a supply for external circuits
GENERAL DESCRIPTION
• Symmetrical high impedance inputs (64 kΩ) for
dynamic, magnetic or piezo-electric microphones
The TEA1110A is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.6 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.
• Asymmetrical high impedance input (32 kΩ) for electret
microphones
• DTMF input with confidence tone
• MUTE input for pulse or DTMF dialling
All statements and values refer to all versions unless
otherwise specified.
• Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces
• AGC line loss compensation for microphone and
earpiece amplifiers.
QUICK REFERENCE DATA
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
normal operation
MIN.
11
TYP. MAX. UNIT
Iline
line current operating range
−
140
11
mA
mA
V
with reduced performance
1
−
VLN
ICC
DC line voltage
3.35
−
3.65
1.1
2.9
3.95
1.4
−
internal current consumption
supply voltage for peripherals
typical voltage gain
VCC = 2.9 V
IP = 0 mA
mA
V
VCC
Gvtrx
−
microphone amplifier (not adjustable) VMIC = 4 mV (RMS)
−
43.7
−
−
dB
dB
dB
receiving amplifier range
VIR = 4 mV (RMS)
Iline = 85 mA
19
−
33
−
∆Gvtrx
gain control range for microphone and
receiving amplifiers with respect to
5.9
Iline = 15 mA
∆Gvtrxm
gain reduction for microphone and
receiving amplifiers
MUTE = LOW
−
80
−
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
SOT27-1
SOT108-1
TEA1110A
DIP14
SO14
plastic dual in-line package; 14 leads (300 mil)
TEA1110AT
plastic small outline package; 14 leads; body width 3.9 mm
1997 Apr 22
2
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
BLOCK DIAGRAM
GAR
13
QR
12
MUTE
6
7
5
IR
V
V
V
I
I
I
V
14
1
CC
LN
ATT.
DTMF
CURRENT
REFERENCE
MIC+ 10
3
REG
V
I
9
MIC−
AGC
CIRCUIT
LOW VOLTAGE
CIRCUIT
TEA1110A(T)
11
8
2
SLPE
AGC
V
EE
MGG736
Fig.1 Block diagram.
3
1997 Apr 22
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
PINNING
SYMBOL PIN
DESCRIPTION
positive line terminal
LN
1
2
3
4
5
6
SLPE
REG
n.c.
slope (DC resistance) adjustment
line voltage regulator decoupling
not connected
handbook, halfpage
LN
SLPE
REG
n.c.
1
2
3
4
5
6
7
14
V
CC
13
12
11
10
9
GAR
QR
DTMF
MUTE
dual-tone multi-frequency input
mute input to select speech or
dialling mode (active LOW)
V
TEA1110A(T)
EE
IR
7
8
receiving amplifier input
DTMF
MUTE
IR
MIC+
MIC−
AGC
AGC
automatic gain control/
line loss compensation
8
MIC−
9
inverting microphone amplifier input
MGG735
MIC+
10 non-inverting microphone amplifier
input
VEE
QR
11 negative line terminal
12 receiving amplifier output
13 receive gain adjustment
GAR
VCC
14 supply voltage for speech circuit and
peripherals
Fig.2 Pin configuration.
The voltage at pin LN is:
VLN = Vref + RSLPE × ISLPE
ISLPE = Iline – ICC – IP – I
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
Supply (pins LN, SLPE, VCC and REG)
Where:
The supply for the TEA1110A and its peripherals is
obtained from the telephone line. See Fig.3.
Iline = line current
ICC = current consumption of the IC
IP = supply current for peripheral circuits
I* = current consumed between LN and VEE
The IC generates a stabilized reference voltage (Vref)
between pins LN and SLPE. Vref is temperature
compensated and can be adjusted by means of an
external resistor (RVA). Vref equals 3.35 V and can be
increased by connecting RVA between pins REG
and SLPE (see Fig.4), or decreased by connecting RVA
between pins REG and LN. The voltage at pin REG is
used by the internal regulator to generate Vref and is
decoupled by CREG, which is connected to VEE. This
capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set
impedance conversion from its DC value (RSLPE) to its AC
value (RCC in the audio-frequency range). The voltage at
pin SLPE is proportional to the line current.
.
The preferred value for RSLPE is 20 Ω. Changing RSLPE will
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the gain control
characteristics, the sidetone level and the maximum
output swing on the line.
1997 Apr 22
4
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
R
I
R
line
CC
619 Ω
line
V
LN
1
CC
14
I
P
from pre amp
I
R
CC
I
exch
sh
I*
C
peripheral
circuits
VCC
100 µF
V
d
V
exch
TEA1110A
2
3
11
V
SLPE
R
REG
C
EE
REG
SLPE
I
SLPE
20 Ω
4.7 µF
MGG737
Fig.3 Supply configuration.
The internal circuitry of the TEA1110A is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (RCC) and must be
decoupled by a capacitor CVCC. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula:
MGD176
6.0
handbook, halfpage
V
ref
(V)
5.0
VCC = VCC0 – RCCint × (IP – Irec
)
VCC0 = VLN – RCC × ICC (see also Figs 5 and 6).
4.0
3.0
R
CCint is the internal equivalent resistance of the voltage
supply, and Irec is the current consumed by the output
stage of the earpiece amplifier.
(1)
(2)
The DC line current flowing into the set is determined by
the exchange supply voltage (Vexch), the feeding bridge
resistance (Rexch), the DC resistance of the telephone line
(Rline) and the reference voltage (Vref). With line currents
below 7.5 mA, the internal reference voltage (generating
Vref) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.
4
5
6
7
10
10
10
10
R
(Ω)
VA
(1) Influence of RVA on Vref
.
(2) Vref without influence of RVA
.
Fig.4 Reference voltage adjustment by RVA
.
1997 Apr 22
5
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
and VEE. This resistor enables the Istart and Istop line
Set impedance
currents to be increased (the ratio between Istart and Istop is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.
In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuit is illustrated in Fig.7.
Mute function (pin MUTE)
Microphone amplifier (pins MIC+ and MIC−)
The mute function performs the switching between the
speech mode and the dialling mode. When MUTE is LOW,
the DTMF input is enabled and the microphone and
receiving amplifiers inputs are disabled. When MUTE is
HIGH, the microphone and receiving amplifiers inputs are
enabled while the DTMF input is disabled. A pull-up
resistor is included at the input.
The TEA1110A has symmetrical microphone inputs.
The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC−
to pin LN is set at 43.7 dB (typ).
Automatic gain control is provided on this amplifier for line
loss compensation.
DTMF amplifier (pin DTMF)
Receiving amplifier (pins IR, GAR and QR)
When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).
The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at
33 dB (typ). The gain can be decreased by connecting an
external resistor RGAR between pins GAR and QR; the
adjustment range is 14 dB. Two external capacitors CGAR
(connected between GAR and QR) and CGARS (connected
between GAR and VEE) ensure stability. The CGAR
capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
The TEA1110A has an asymmetrical DTMF input.
The input impedance between DTMF and VEE is 20 kΩ.
The voltage gain from pin DTMF to pin LN is 25.3 dB.
The automatic gain control has no effect on the DTMF
amplifier.
CGAR × (RGARint // RGAR). RGARint is the internal resistor
which sets the gain with a typical value of 125 kΩ.
The condition CGARS = 10 × CGAR must be fulfilled to
ensure stability.
MBE783
2.5
handbook, halfpage
I
P
The output voltage of the receiving amplifier is specified for
continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the ICC
current consumption of the circuit, the IP current
consumption of the peripheral circuits and the load
impedance.
(mA)
2
1.5
1
Automatic gain control is provided on this amplifier for line
loss compensation.
(2)
(1)
0.5
0
Automatic gain control (pin AGC)
The TEA1110A performs automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current.
The control range is 5.9 dB (which corresponds
0
1
2
3
4
V
(V)
CC
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The IC can be used with different configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor RAGC between pins AGC
(1) With RVA resistor.
(2) Without RVA resistor.
Fig.5 Typical current IP available from VCC for
peripheral circuits at Iline = 15 mA.
1997 Apr 22
6
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
SIDETONE SUPPRESSION
The TEA1110A anti-sidetone network comprising
RCC//Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.8 )
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:
handbook, halfpage
R
V
CC
CCint
R
SLPE × Rast1 = RCC × (Rast2 + Rast3
(Rast2 × (Rast3 + RSLPE) )
)
I
PERIPHERAL
CIRCUIT
V
rec
I
P
CCO
k =
-----------------------------------------------------------------------
(Rast1 × RSLPE
Z bal = k × Zline
)
MBE792
V
EE
The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Zbal
.
In practice, Zline varies considerably with the line type and
the line length. Therefore, the value of Zbal should be for an
average line length which gives satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Zbal
and the impedance of the average line.
Fig.6 VCC supply voltage for peripherals.
The anti-sidetone network for the TEA1110A (as shown in
Fig.12) attenuates the receiving signal from the line by
32 dB before it enters the receiving amplifier.
The attenuation is almost constant over the whole audio
frequency range.
LN
handbook, halfpage
R
CC
619 Ω
R
L
P
EQ
V
REG
V
CC
A Wheatstone bridge configuration (see Fig.9) may also
be used.
ref
SLPE
R
C
C
SLPE
20 Ω
REG
VCC
More information on the balancing of an anti-sidetone
bridge can be obtained in our publication “Applications
Handbook for Wired Telecom Systems, IC03b”, order
number 9397 750 00811.
4.7 µF
100 µF
V
EE
MBE788
Leq = CREG × RSLPE × RP.
RP = internal resistance.
RP = 15.5 kΩ.
Fig.7 Equivalent impedance between LN and VEE
.
1997 Apr 22
7
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
LN
R
R
CC
ast1
Z
line
IR
I
V
m
EE
Z
ir
R
ast2
R
SLPE
R
ast3
Z
bal
SLPE
MBE787
Fig.8 Equivalent circuit of TEA1110A family anti-sidetone bridge.
LN
R
Z
CC
bal
Z
line
IR
I
V
m
EE
Z
ir
R
SLPE
R
R
A
ast1
SLPE
MBE786
Fig.9 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
8
1997 Apr 22
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VLN
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
positive continuous line voltage
V
EE − 0.4 12
V
V
repetitive line voltage during switch-on or
line interruption
V
EE − 0.4 13.2
Vn(max)
Iline
maximum voltage on all pins
line current
V
EE − 0.4 VCC + 0.4
V
RSLPE = 20 Ω;
−
140
mA
see Figs 10 and 11
Ptot
total power dissipation
TEA1110A
Tamb = 75 °C;
see Figs 10 and 11
−
−
588
384
mW
mW
°C
TEA1110AT
Tstg
storage temperature
operating ambient temperature
−40
−25
+125
+75
Tamb
°C
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
thermal resistance from junction to ambient in free air;
85
K/W
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110A)
thermal resistance from junction to ambient in free air;
130
K/W
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110AT)
1997 Apr 22
9
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
MBH275
MGD859
150
150
line
handbook, halfpage
handbook, halfpage
I
I
line
(mA)
(mA)
130
130
(1)
110
110
90
(2)
(3)
(1)
(2)
90
(4)
(5)
(3)
70
70
(4)
50
30
50
30
2
2
4
6
8
10
12
4
6
8
10
12
_
V
(V)
V
V
(V)
V
LN SLPE
LN
SLPE
(1) Tamb = 35 °C; Ptot = 1.058 W.
(2) Tamb = 45 °C; Ptot = 0.941 W.
(3) Tamb = 55 °C; Ptot = 0.823 W.
(1) Tamb = 45 °C; Ptot = 0.615 W.
(2) amb = 55 °C; Ptot = 0.538 W.
T
(4)
Tamb = 65 °C; Ptot = 0.705 W.
(3) Tamb = 65 °C; Ptot = 0.461 W.
(4) Tamb = 75 °C; Ptot = 0.384 W.
(5) Tamb = 75 °C; Ptot = 0.588 W.
Fig.10 SO14 Safe operating area (TEA1110AT).
Fig.11 DIP14 Safe operating area (TEA1110A).
1997 Apr 22
10
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies (pins VLN, VCC, SLPE and REG)
Vref
stabilized voltage between LN and
SLPE
3.1
3.35 3.6
V
VLN
DC line voltage
Iline = 1 mA
−
1.6
2.3
−
−
V
V
V
V
V
Iline = 4 mA
−
Iline = 15 mA
3.35
−
3.65 3.95
Iline = 140 mA
RVA(SLPE−REG) = 27 kΩ
−
6.9
VLN(exR)
DC line voltage with an external
resistor RVA
−
4.4
−
∆VLN(T)
DC line voltage variation with
Tamb = −25 to +75 °C
−
±30
−
mV
temperature referred to 25 °C
ICC
internal current consumption
supply voltage for peripherals
VCC = 2.9 V
IP = 0 mA
−
−
−
1.1
2.9
550
1.4
−
mA
V
VCC
RCCint
equivalent supply voltage resistance IP = 0.5 mA
620
Ω
Microphone amplifier (pins MIC+ and MIC−)
Zi
input impedance
differential between pins
MIC+ and MIC−
−
−
64
32
−
−
kΩ
kΩ
single-ended between pins
MIC+/MIC− and VEE
Gvtx
voltage gain from MIC+/MIC− to LN VMIC = 4 mV (RMS)
42.7
43.7 44.7
dB
dB
∆Gvtx(f)
gain variation with frequency
referred to 1 kHz
f = 300 to 3400 Hz
−
±0.2
−
∆Gvtx(T)
gain variation with temperature
Tamb = −25 to +75 °C
−
±0.3
−
dB
referred to 25 °C
CMRR
common mode rejection ratio
−
80
−
−
−
−
dB
V
VLN(max)(rms) maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2%
1.4
−
1.7
Iline = 4 mA, THD = 10%
0.8
V
Vnotx
noise output voltage at pin LN; pins psophometrically
−
−78.5
dBmp
MIC+/MIC− shorted through 200 Ω
weighted (P53 curve)
Receiving amplifier (pins IR, QR and GAR)
Zi
input impedance
−
20
−
kΩ
dB
dB
Gvrx
voltage gain from IR to QR
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
32
−
33
34
−
∆Gvrx(f)
gain variation with frequency
referred to 1 kHz
±0.2
∆Gvrx(T)
gain variation with temperature
Tamb = −25 to +75 °C
−
±0.3
−
dB
referred to 25 °C
1997 Apr 22
11
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
SYMBOL
PARAMETER
CONDITIONS
external resistor
connected between
GAR and QR
MIN.
TYP.
MAX.
14
UNIT
∆Gvrxr
gain voltage reduction range
−
−
−
−
−
dB
Vo(rms)
maximum receiving signal (RMS
value)
IP = 0 mA sine wave
drive; RL = 150 Ω;
THD = 2%
0.25
0.35
−87
−
−
−
V
IP = 0 mA sine wave
drive; RL = 450 Ω;
THD = 2%
V
Vnorx(rms)
noise output voltage at pin QR
(RMS value)
Gvrx = 33 dB;
IR open-circuit;
RL = 150 Ω;
dBVp
psophometrically
weighted (P53 curve)
Automatic gain control (pin AGC)
∆Gvtrx
gain control range for microphone
Iline = 85 mA
−
5.9
−
dB
and receiving amplifiers with respect
to Iline = 15 mA
Istart
Istop
highest line current for maximum
gain
−
−
23
56
−
−
mA
mA
lowest line current for minimum gain
DTMF amplifier (pin DTMF)
Zi
input impedance
−
20
−
kΩ
Gvdtmf
voltage gain from DTMF to LN
VDTMF = 20 mV (RMS);
MUTE = LOW
24.1
25.3 26.5
dB
∆Gvdtmf(f)
∆Gvdtmf(T)
Gvct
gain variation with frequency
referred to 1 kHz
f = 300 to 3400 Hz
−
−
−
±0.2
±0.4
−15
−
−
−
dB
dB
dB
gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
voltage gain from DTMF to QR
(confidence tone)
VDTMF = 20 mV (RMS);
RL = 150 Ω
Mute function (pin MUTE)
VIL
LOW level input voltage
V
EE − 0.4
−
VEE + 0.3
VCC + 0.4
V
VIH
HIGH level input voltage
input current
VEE + 1.5
−
V
IMUTE
∆Gvtrxm
1.5
80
µA
dB
gain reduction for microphone and
receiving amplifiers
MUTE = LOW
1997 Apr 22
12
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
APPLICATION INFORMATION
GM378
a
1997 Apr 22
13
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
PACKAGE OUTLINES
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A
X
c
y
H
v
M
A
E
Z
8
14
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
7
e
detail X
w
M
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.75
1.27
0.050
1.05
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.0098 0.057
0.0039 0.049
0.019 0.0098 0.35
0.014 0.0075 0.34
0.16
0.15
0.24
0.23
0.039 0.028
0.016 0.024
0.028
0.012
inches
0.041
0.01 0.004
0.069
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
91-08-13
95-01-23
SOT108-1
076E06S
MS-012AB
1997 Apr 22
14
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
D
M
E
A
2
A
A
1
L
c
e
w M
Z
b
1
(e )
1
b
M
H
14
8
pin 1 index
E
1
7
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
UNIT
mm
b
b
c
D
E
e
e
L
M
M
H
w
1
1
E
max.
min.
max.
max.
1.73
1.13
0.53
0.38
0.36
0.23
19.50
18.55
6.48
6.20
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
2.2
0.068
0.044
0.021
0.015
0.014
0.009
0.77
0.73
0.26
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.087
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-03-11
SOT27-1
050G04
MO-001AA
1997 Apr 22
15
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1997 Apr 22
16
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
17
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
NOTES
1997 Apr 22
18
Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
TEA1110A
NOTES
1997 Apr 22
19
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Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/02/pp20
Date of release: 1997 Apr 22
Document order number: 9397 750 02077
相关型号：
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