TEA1118AT [NXP]
Versatile cordless transmisssion circuit; 多功能无绳transmisssion电路
| 型号： | TEA1118AT |
| 厂家： | 
NXP |
| 描述： | Versatile cordless transmisssion circuit |
| 文件： | 总24页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA1118; TEA1118A
Versatile cordless transmisssion
circuit
1997 Jul 14
Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
FEATURES
GENERAL DESCRIPTION
• Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)
The TEA1118 and TEA1118A are bipolar integrated
circuits that perform all speech and line interface functions
required in cordless telephone base stations. The ICs
operate at a line voltage down to 1.6 V DC (with reduced
performance) to facilitate the use of telephone sets
connected in parallel.
• Voltage regulator with adjustable DC voltage
• Provides a supply for external circuits
• Symmetrical high impedance transmit inputs (62.5 kΩ)
with large signals handling capabilities [up to
1 V (RMS value) with less than 2% THD]
The TEA1118A offers in addition to the TEA1118
electronic switching between speech and dialling.
Moreover the transmit amplifier can be disabled during
speech condition by means of a transmit mute function.
• Receive amplifier for dynamic, magnetic or
piezoelectric earpieces
• AGC line loss compensation for transmit and earpiece
amplifiers
All statements and values refer to all versions unless
otherwise specified.
• DTMF input with confidence tone (TEA1118A only)
• MUTE input for pulse or DTMF dialling (TEA1118A only)
• Transmit mute function, also enabling the DTMF input
(TEA1118A only).
APPLICATIONS
• Cordless telephone base stations
• Fax machines
• Answering machines.
QUICK REFERENCE DATA
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
normal operation
MIN.
11
TYP.
MAX. UNIT
Iline
line current operating range
−
−
140
mA
mA
V
with reduced performance
1
11
VLN
ICC
DC line voltage
3.35
−
3.65
1.15
2.9
3.95
1.4
−
internal current consumption
supply voltage for peripherals
typical voltage gain range
transmit amplifier (TEA1118A only)
transmit amplifier (TEA1118 only)
receive amplifier
VCC = 2.9 V
IP = 0 mA
mA
V
VCC
Gvtrx
−
V
TX = 200 mV (RMS)
TX = 200 mV (RMS)
−
−
11.3
11.3
31
dB
dB
dB
dB
V
5.3
19
−
−
VIR = 4 mV (RMS)
Iline = 75 mA
−
∆Gvtrx
gain control range for transmit and
receive amplifiers with respect to
Iline = 15 mA
5.8
−
1997 Jul 14
2
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
SSOP16
SO14
DESCRIPTION
VERSION
TEA1118M
TEA1118T
TEA1118AM
TEA1118AT
SOT369-1
SOT108-1
SOT369-1
SOT108-1
plastic shrink small outline package; 16 leads; body width 4.4 mm
plastic small outline package; 14 leads; body width 3.9 mm
plastic shrink small outline package; 16 leads; body width 4.4 mm
plastic small outline package; 14 leads; body width 3.9 mm
SSOP16
SO14
BLOCK DIAGRAMS
GAR
QR
V
CC
IR
V−>I
LN
CURRENT
REFERENCE
TX+
TX−
GAT
REG
V−>I
AGC
CIRCUIT
TEA1118M
TEA1118T
LOW VOLTAGE
CIRCUIT
MBH273
V
SLPE
EE
AGC
Fig.1 Block diagram (TEA1118).
3
1997 Jul 14
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
GAR
MUTE
QR
IR
V−>I
V−>I
V−>I
V−>I
V
CC
LN
ATTENUATOR
DTMF
CURRENT
REFERENCE
TX+
TX−
REG
TRANSMIT
MUTE
AGC
CIRCUIT
TMUTE
TEA1118AM
TEA1118AT
LOW VOLTAGE
CIRCUIT
MBH272
V
SLPE
EE
AGC
Fig.2 Block diagram (TEA1118A).
1997 Jul 14
4
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
PINNING
TEA1118
TEA1118A
SYMBOL
LN
DESCRIPTION
SO14
SSOP16
SO14
SSOP16
1
1
2
1
2
1
2
positive line terminal
SLPE
REG
GAT
TMUTE
DTMF
MUTE
IR
2
slope (DC resistance) adjustment
line voltage regulator decoupling
transmit gain adjustment
3
3
3
3
4
4
−
−
−
−
4
5
transmit mute input
−
−
5
6
dual-tone multi-frequency input
mute input to select speech or dialling mode
receive amplifier input
−
7
−
6
8
9
7
9
AGC
TX−
8
10
11
12
13
14
15
16
5 to 8
8
10
11
12
13
14
15
16
automatic gain control/line loss compensation
inverting transmit amplifier input
non-inverting transmit amplifier input
negative line terminal
9
9
TX+
10
10
11
12
13
14
−
VEE
11
QR
12
receive amplifier output
GAR
VCC
13
receive gain adjustment
14
supply voltage for speech circuit and peripherals
n.c.
5 and 6
4 and 7 not connected
1997 Jul 14
5
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
handbook, halfpage
V
1
2
3
4
5
6
7
8
16
LN
SLPE
REG
GAT
n.c.
CC
handbook, halfpage
V
15 GAR
1
2
3
4
5
6
7
14
13
12
11
10
9
LN
SLPE
REG
GAT
n.c.
CC
14
13
12
11
10
9
GAR
QR
QR
V
EE
TEA1118M
V
TX+
TX−
AGC
IR
TEA1118T
EE
n.c.
TX+
TX−
AGC
n.c.
n.c.
8
n.c.
IR
MBH269
MBH268
Fig.3 Pin configuration (TEA1118T).
Fig.4 Pin configuration (TEA1118M).
handbook, halfpage
V
1
2
3
4
5
6
7
8
16
LN
SLPE
REG
CC
handbook, halfpage
V
15 GAR
1
2
3
4
5
6
7
14
13
12
11
10
9
LN
SLPE
REG
CC
14
13
12
11
10
9
GAR
QR
QR
V
n.c.
EE
TEA1118AM
V
TMUTE
DTMF
MUTE
IR
TMUTE
DTMF
n.c.
TX+
TX−
AGC
IR
TEA1118AT
EE
TX+
TX−
AGC
8
MUTE
MBH271
MBH270
Fig.5 Pin configuration (TEA1118AT).
Fig.6 Pin configuration (TEA1118AM).
1997 Jul 14
6
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
by the formula (see also Figs 8 and 9). RCCint is the
internal equivalent resistance of the voltage supply point,
and Irec is the current consumed by the output stage of the
earpiece amplifier.
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
VCC = VCC0 − RCCint × (IP − Irec
VCC0 = VLN − RCC × ICC
)
Supplies (pins LN, SLPE, VCC and REG)
The supply for the TEA1118 and TEA1118A and their
peripherals is obtained from the telephone line.
The DC line current flowing into the set is determined by
the exchange supply voltage (Vexch), the feeding bridge
resistance (Rexch), the DC resistance of the telephone line
(Rline) and the reference voltage (Vref). With line currents
below 7.5 mA, the internal reference voltage (generating
Vref) is automatically adjusted to a lower value.
This means that more sets can operate in parallel with DC
line voltages (excluding the polarity guard) down to an
absolute minimum voltage of 1.6 V. At currents below
7.5 mA, the circuit has limited transmit and receive levels.
This is called the low voltage area.
The ICs generate a stabilized reference voltage (Vref)
between pins LN and SLPE. This reference voltage is
equal to 3.35 V, is temperature compensated and can be
adjusted by means of an external resistor (RVA). It can be
increased by connecting the RVA resistor between
pins REG and SLPE (see Fig.11), or decreased by
connecting the RVA resistor between pins REG and LN.
The voltage at pin REG is used by the internal regulator to
generate the stabilized reference voltage and is decoupled
by a capacitor (CREG) which is connected to VEE
.
This capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set impedance
conversion from its DC value (RSLPE) to its AC value
(RCC in the audio-frequency range). The voltage at pin
SLPE is proportional to the line current. Figure 7 illustrates
the supply configuration.
Set impedance
In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuits is illustrated in Fig.10.
Transmit amplifier (pins TX+, TX− and GAT)
The ICs regulate the line voltage at pin LN, and it can be
calculated as follows:
The TEA1118 and TEA1118A have symmetrical transmit
inputs. The input impedance between pins TX+ and TX− is
equal to 62.5 kΩ; the input impedance between pins
TX+/TX− and VEE is equal 36.5 kΩ. The voltage gain from
pins TX+/TX− to pin LN is set at 11.3 dB.
VLN = Vref + RSLPE × ISLPE
ISLPE = Iline − ICC − IP − I* = Ish
where:
Iline: line current
Automatic gain control is provided on this amplifier for line
loss compensation.
ICC: current consumption of the IC
IP: supply current for peripheral circuits
I*: current consumed between LN and VEE
The gain of the TEA1118 can be decreased by connecting
an external resistor RGAT between pins GAT and REG.
The adjustment range is equal to 6 dB. A capacitor CGAT
connected between pins GAT and REG can be used to
provide a first-order low-pass filter. The cut-off frequency
corresponds to the time constant CGAT × (RGATint // RGAT).
RGATint is the internal resistor which sets the gain with a
typical value of 27 kΩ.
Ish: the excess line current shunted to SLPE (and VEE
via LN.
)
The preferred value for RSLPE is 20 Ω. Changing RSLPE will
affect more than the DC characteristics; it also influences
the transmit gain and the DTMF gain (TEA1118A only), the
gain control characteristics, the sidetone level and the
maximum output swing on the line.
Transmit mute (pin TMUTE; TEA1118A only)
The transmit amplifier can be disabled by activating the
transmit mute function. When TMUTE is LOW, the normal
speech mode is entered, depending on the level on MUTE.
When TMUTE is HIGH, the transmit amplifier inputs are
disabled while the DTMF input is enabled (no confidence
tone is provided). The voltage gain between LN and
TX+/TX− is attenuated; the gain reduction is 80 dB.
The internal circuitry of the TEA1118 and TEA1118A is
supplied from pin VCC. This voltage supply is derived from
the line voltage by means of a resistor (RCC) and must be
decoupled by a capacitor CVCC. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
1997 Jul 14
7
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
The CGAR capacitor provides a first-order low-pass filter.
The cut-off frequency corresponds to the time constant
Receive amplifier (pins IR, GAR and QR)
The receive amplifier has one input (IR) and one output
(QR). The input impedance between pins IR and VEE is
20 kΩ. The voltage gain from pin IR to pin QR is set at
31 dB. The gain can be decreased by connecting an
external resistor RGAR between pins GAR and QR; the
adjustment range is 12 dB. Two external capacitors CGAR
(connected between GAR and QR) and CGARS (connected
between GAR and VEE) ensure stability.
CGAR × (RGARint // RGAR). RGARint is the internal resistor
which sets the gain with a typical value of 100 kΩ. The
condition CGARS = 10 × CGAR must be fulfilled to ensure
stability.
Automatic gain control is provided on this amplifier for line
loss compensation.
R
I
R
line
CC
619 Ω
line
LN
V
CC
I
TEA1118
TEA1118A
p
from preamp
C
I
VCC
R
CC
exch
100 µF
I
*
I
sh
peripheral
circuits
V
exch
V
REG
C
EE
SLPE
R
SLPE
REG
I
SLPE
20 Ω
4.7 µF
MBH274
Fig.7 Supply configuration.
1997 Jul 14
8
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
MBE783
2.5
handbook, halfpage
I
P
(mA)
2
handbook, halfpage
R
1.5
1
V
CCint
CC
I
PERIPHERAL
CIRCUIT
V
rec
I
P
CCO
(2)
(1)
0.5
0
MBE792
V
EE
0
1
2
3
4
V
(V)
CC
(1) With RVA resistor.
(2) Without RVA resistor.
Fig.8 Typical current IP available from VCC for
peripheral circuits at Iline = 15 mA.
Fig.9 VCC voltage supply for peripheral.
MGD176
6.0
handbook, halfpage
V
ref
(V)
LN
handbook, halfpage
5.0
R
CC
R
L
P
EQ
619 Ω
V
REG
V
CC
ref
SLPE
4.0
3.0
R
C
C
SLPE
20 Ω
REG
VCC
4.7 µF
100 µF
(1)
(2)
V
EE
MBE788
4
5
6
7
10
10
10
10
R
(Ω)
VA
LEQ = CREG × RSLPE × RP.
RP = internal resistance (15.5 kΩ).
(1) Influence of RVA on Vref
.
(2) Vref without influence of RVA
.
Fig.10 Equivalent impedance between LN and VEE
.
Fig.11 Reference voltage adjustment by RVA.
1997 Jul 14
9
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
Automatic Gain Control (pin AGC)
Sidetone suppression
The TEA1118 and TEA1118A perform automatic line loss
compensation. The automatic gain control varies the gain
of the transmit amplifier and the gain of the receive
amplifier in accordance with the DC line current.
The control range is 5.8 dB (which corresponds
The TEA1118 and TEA1118A anti-sidetone network
comprising RCC//Zline, Rast1, Rast2, Rast3, RSLPE and Zbal
(see Fig.12) suppresses the transmitted signal in the
earpiece. Maximum compensation is obtained when the
following conditions are fulfilled:
approximately to a line length of 5 km for a 0.5 mm
diameter twisted-pair copper cable with a DC resistance of
176 Ω/km and an average attenuation of 1.2 dB/km).
The ICs can be used with different configurations of
feeding bridge (supply voltage and bridge resistance) by
connecting an external resistor RAGC between pins AGC
and VEE. This resistor enables the Istart and Istop line
currents to be increased (the ratio between Istart and Istop is
not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.
R
SLPE × Rast1 = RCC × (Rast2 + Rast3)
[Rast2 × (Rast3 + RSLPE) ]
k =
-----------------------------------------------------------------------
(Rast1 × RSLPE
)
Z bal = k × Zline
The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Zbal
.
In practice, Zline varies considerably with the line type and
the line length. Therefore, the value chosen for Zbal should
be for an average line length which gives satisfactory
sidetone suppression with short and long lines.
The suppression also depends on the accuracy of the
match between Zbal and the impedance of the average
line.
DTMF amplifier (pin DTMF; TEA1118A only)
When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).
The TEA1118A has an asymmetrical DTMF input.
The input impedance between DTMF and VEE is 20 kΩ.
The voltage gain from pin DTMF to pin LN is 17.4 dB.
The anti-sidetone network for the TEA1118 and
TEA1118A (as shown in Fig.16) attenuates the receive
signal from the line by 32 dB before it enters the receive
amplifier.
The automatic gain control has no effect on the DTMF
amplifier.
The attenuation is almost constant over the whole audio
frequency range.
Mute function (pin MUTE; TEA1118A only)
The mute function performs the switching action between
the speech mode and the dialling mode. When MUTE is
LOW or open-circuit, the transmit and receive amplifiers
inputs are enabled while the DTMF input is disabled,
depending on the TMUTE level. When MUTE is HIGH, the
DTMF input is enabled and the transmit and receive
amplifiers inputs are disabled.
A Wheatstone bridge configuration (see Fig.13) may also
be used.
More information on the balancing of an anti-sidetone
bridge can be obtained in our publication “Applications
Handbook for Wired Telecom Systems, IC03b”, order
number 9397 750 00811.
MUTE and TMUTE levels for different modes (TEA1118A only)
Table 1 Required MUTE and TMUTE levels to enable the different possible modes
CHANNEL
MODE
MUTE
TMUTE
CONFIDENCE
TRANSMIT
RECEIVE
DTMF
TONE
Speech
on
off
off
on
off
on
off
on
on
off
on
off
LOW
HIGH
LOW
LOW
X(1)
DTMF dialling
Transmit mute
HIGH
Note
1. X = don’t care.
1997 Jul 14
10
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
LN
R
R
CC
ast1
Z
line
IR
I
V
m
EE
Z
ir
R
ast2
R
SLPE
R
ast3
Z
bal
SLPE
MBE787
Fig.12 Equivalent circuit of TEA1118 and TEA1118A family anti-sidetone bridge.
h
LN
R
Z
CC
bal
Z
line
IR
I
V
m
EE
Z
ir
R
SLPE
R
R
A
ast1
SLPE
MBE786
Fig.13 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
11
1997 Jul 14
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VLN
positive continuous line voltage
V
EE − 0.4 12
V
V
repetitive line voltage during switch-on or line
interruption
VEE − 0.4 13.2
Vn(max)
Iline
maximum voltage on all pins
line current
V
EE − 0.4 VCC + 0.4
V
RSLPE = 20 Ω;
−
140
mA
see Figs 14 and 15
Ptot
total power dissipation
Tamb = 75 °C;
see Figs 14 and 15
TEA1118T; TEA1118AT
TEA1118M; TEA1118AM
IC storage temperature
operating ambient temperature
−
−
384
312
mW
mW
°C
Tstg
−40
−25
+125
+75
Tamb
°C
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
TEA1118T; TEA1118AT
130
160
K/W
K/W
TEA1118M; TEA1118AM
mounted on epoxy board
40.1 × 19.1 × 1.5 mm
1997 Jul 14
12
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
MBH276
MBH275
160
line
150
handbook, halfpage
I
handbook, halfpage
I
line
(mA)
140
(mA)
130
120
100
110
(1)
(1)
(2)
(3)
(4)
90
70
(2)
80
60
40
(3)
(4)
50
30
20
2
4
6
8
10
12
2
4
6
8
10
12
V
(V)
V
V
(V)
LN
SLPE
V
LN
SLPE
(1) Tamb = 45 °C; Ptot = 615 mW.
(2) Tamb = 55 °C; Ptot = 538 mW.
(3) Tamb = 65 °C; Ptot = 461 mW.
(1) Tamb = 45 °C; Ptot = 500 mW.
(2) Tamb = 55 °C; Ptot = 437 mW.
(3) Tamb = 65 °C; Ptot = 375 mW.
(4)
Tamb = 75 °C; Ptot = 384 mW.
(4) Tamb = 75 °C; Ptot = 312 mW.
Fig.14 SO14 safe operating area.
Fig.15 SSOP16 safe operating area.
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies (pins VLN, VCC, SLPE and REG)
Vref
VLN
stabilized voltage between LN and
SLPE
3.1
3.35
3.6
V
DC line voltage
Iline = 1 mA
−
1.6
2.45
3.65
−
−
V
V
V
V
V
I
line = 4 mA
line = 15 mA
−
−
I
3.35
−
3.95
6.9
−
Iline = 140 mA
VLN(exR)
DC line voltage with an external
resistor RVA
RVA(SLPE−REG) = 27 kΩ
−
4.4
∆VLN(T)
DC line voltage variation with
Tamb = −25 to +75 °C
−
±30
−
mV
temperature referenced to 25 °C
ICC
internal current consumption
supply voltage for peripherals
VCC = 2.9 V
IP = 0 mA
−
−
−
1.15
2.9
1.4
−
mA
V
VCC
RCCint
equivalent supply voltage
resistance
IP = 0.5 mA
550
620
Ω
1997 Jul 14
13
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Transmit amplifier (pins TX+, TX− and GAT)
Zi
input impedance
differential between pins
TX+ and TX−
−
−
62.5
36.5
−
−
kΩ
kΩ
single-ended between pins
TX+/TX− and VEE
Gvtx
voltage gain from TX+/TX− to LN
VTX = 200 mV (RMS)
f = 300 to 3400 Hz
10.1
11.3
12.5
dB
dB
∆Gvtx(f)
gain variation with frequency
referred to 1 kHz
−
±0.2
−
∆Gvtx(T)
gain variation with temperature
Tamb = −25 to +75 °C
−
±0.3
−
dB
referred to 25 °C
CMRR
common mode rejection ratio
−
−
60
−
dB
dB
∆Gvtxr
gain voltage reduction range
(TEA1118 only)
external resistor connected
between GAT and REG
−
6
VLN(max)
VTX(max)
Vnotx
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2%
Iline = 4 mA; THD = 10%
Iline = 15 mA; THD = 2%
1.4
−
1.7
−
−
−
−
−
V
0.8
V
maximum transmit input voltage
(RMS value)
−
0.45
0.9
V
Iline = 75 mA; THD = 2%
−
V
noise output voltage at pin LN; pins psophometrically weighted
−
−84
dBmp
TX+/TX− shorted through 200 Ω
(P53 curve)
Transmit mute (pin TMUTE; TEA1118A only)
∆Gvtxm
VIL
gain reduction
TMUTE = HIGH
−
80
−
dB
V
LOW level input voltage
HIGH level input voltage
input current
V
EE − 0.4
−
VEE + 0.3
VIH
VEE + 1.5 −
VCC + 0.4 V
ITMUTE
input level = HIGH
−
1.25
3
µA
Receive amplifier (pins IR, QR and GAR)
Zi
input impedance
−
20
−
kΩ
dB
dB
Gvrx
voltage gain from IR to QR
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
29.8
−
31
32.2
−
∆Gvrx(f)
gain variation with frequency
referenced to 1 kHz
±0.2
∆Gvrx(T)
∆Gvrxr
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
−
−
−
±0.3
−
−
dB
dB
V
gain voltage reduction range
external resistor connected
between GAR and QR
12
−
Vo(rms)
maximum receive signal
(RMS value)
IP = 0 mA sine wave drive;
RL = 150 Ω; THD = 2%
0.25
0.35
IP = 0 mA sine wave drive;
−
V
RL = 450 Ω; THD = 2%
Vnorx(rms)
noise output voltage at pin QR
(RMS value)
IR open-circuit;
RL = 150 Ω;
psophometrically weighted
(P53 curve)
TEA1118
−
−
−89
−86
−
−
dBVp
dBVp
TEA1118A
1997 Jul 14
14
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Automatic gain control (pin AGC)
∆Gvtrx
gain control range for transmit and Iline = 75 mA;
receive amplifiers with respect to
line = 15 mA
−
5.8
−
dB
I
Istart
Istop
highest line current for maximum
gain
−
−
26
61
−
−
mA
mA
lowest line current for minimum gain
DTMF amplifier (pin DTMF; TEA1118A only)
Zi
input impedance
−
20
−
kΩ
Gvdtmf
voltage gain from DTMF to LN
VDTMF = 100 mV (RMS);
MUTE or TMUTE = HIGH
16.2
17.4
18.6
dB
∆Gvdtmf(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
−
−
±0.2
±0.4
−18
−
−
−
dB
dB
dB
∆Gvdtmf(T) gain variation with temperature
referenced to 25 °C
Tamb = −25 to + 75 °C
Gvct
voltage gain from DTMF to QR
(confidence tone)
VDTMF = 100 mV (RMS);
RL = 150 Ω
Mute function (pin MUTE; TEA1118A only)
VIL
LOW level input voltage
HIGH level input voltage
input current
V
EE − 0.4
−
VEE + 0.3
V
VIH
VEE + 1.5 −
VCC + 0.4 V
IMUTE
∆Gtrxm
input level = HIGH
MUTE = HIGH
−
−
1.25
80
3
µA
dB
gain reduction for transmit and
receive amplifiers
−
1997 Jul 14
15
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
APPLICATION INFORMATION
BM2H7
V
1997 Jul 14
16
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
PACKAGE OUTLINES
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
D
E
A
X
c
y
H
v
M
A
E
Z
9
16
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0.00
1.4
1.2
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.0
1.5
0.25
0.65
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
94-04-20
95-02-04
SOT369-1
1997 Jul 14
17
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A
X
c
y
H
v
M
A
E
Z
8
14
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
7
e
detail X
w
M
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
8.75
8.55
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.75
1.27
0.050
1.05
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.35
0.014 0.0075 0.34
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches
0.041
0.01 0.004
0.069
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT108-1
076E06S
MS-012AB
1997 Jul 14
18
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
SOLDERING
Introduction
SSOP
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Reflow soldering
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
Reflow soldering techniques are suitable for all SO and
SSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
METHOD (SO AND SSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
SO
Repairing soldered joints
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1997 Jul 14
19
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 14
20
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
NOTES
1997 Jul 14
21
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
NOTES
1997 Jul 14
22
Philips Semiconductors
Product specification
Versatile cordless transmisssion circuit
TEA1118; TEA1118A
NOTES
1997 Jul 14
23
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/03/pp24
Date of release: 1997 Jul 14
Document order number: 9397 750 02613
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