TEA5767HN_技术文档

TEA5767HN

Low-power FM stereo radio for handheld applications

Rev. 04 — 20 February 2006

Product data sheet

1. General description

The TEA5767HN is a single-chip electronically tuned FM stereo radio for low-voltage

applications with fully integrated IF selectivity and demodulation. The radio is completely

adjustment-free and only requires a minimum of small and low cost external components.

The radio can be tuned to the European, US and Japanese FM bands.

2. Features

I High sensitivity due to integrated low-noise RF input ampliﬁer

I FM mixer for conversion to IF of the US/Europe (87.5 MHz to 108 MHz) and Japanese

(76 MHz to 91 MHz) FM band

I Preset tuning to receive Japanese TV audio up to 108 MHz

I RF Automatic Gain Control (AGC) circuit

I LC tuner oscillator operating with low cost ﬁxed chip inductors

I FM IF selectivity performed internally

I No external discriminator needed due to fully integrated FM demodulator

I Crystal reference frequency oscillator; the oscillator operates with a 32.768 kHz clock

crystal or with a 13 MHz crystal and with an externally applied 6.5 MHz reference

frequency

I PLL synthesizer tuning system

I I²C-bus and 3-wire bus, selectable via pin BUSMODE

I 7-bit IF counter output via the bus

I 4-bit level information output via the bus

I Soft mute

I Signal dependent mono to stereo blend [Stereo Noise Cancelling (SNC)]

I Signal dependent High Cut Control (HCC)

I Soft mute, SNC and HCC can be switched off via the bus

I Adjustment-free stereo decoder

I Autonomous search tuning function

I Standby mode

I Two software programmable ports

I Bus enable line to switch the bus input and output lines into 3-state mode

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

3. Quick reference data

Table 1.

Quick reference data

V_CCA= V_CC(VCO)= V_CCD; AC values are given in RMS; for V_RFthe EMF value is given; unless

otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

V_CCA

analog supply

voltage

2.5

3.0

5.0

V

V_CC(VCO)voltage controlled

oscillator supply

voltage

2.5

3.0

5.0

V

V_CCD

digital supply

voltage

5.0

V

I_CCA

analog supply

current

operating; V_CCA= 3 V

Standby mode; V_CCA= 3 V

operating;

6.0

-

8.4

3

10.5 mA

6

µA

I_CC(VCO)

voltage controlled

oscillator supply

current

560

750

940

V_VCOTANK1= V_VCOTANK2= 3 V

Standby mode;

-

1

2

µA

V_VCOTANK1= V_VCOTANK2= 3 V

I_CCD

digital supply

current

operating; V_CCD= 3 V

Standby mode; V_CCD= 3 V

bus enable line HIGH

bus enable line LOW

2.1

3.0

3.9

mA

30

56

19

-

80

µA

11

26

µA

f_FM(ant)

T_amb

FM input frequency

76

108

+75

MHz

°C

ambient

temperature

V_CCA= V_CC(VCO)= V_CCD

2.5 V to 5 V

=

−10

-

FM overall system parameters; see Figure 13

V_RF

RF sensitivity input f_RF= 76 MHz to 108 MHz;

-

2

3.5

µV

voltage

∆f = 22.5 kHz; f_mod= 1 kHz;

(S+N)/N = 26 dB;

de-emphasis = 75 µs; L = R;

B

_AF= 300 Hz to 15 kHz

∆f = −200 kHz;

_tune= 76 MHz to 108 MHz

[1]

S₋₂₀₀

S₊₂₀₀

V_AFL

low side 200 kHz

selectivity

32

39

60

36

43

75

-

dB

mV

f

high side 200 kHz ∆f = +200 kHz;

selectivity _tune= 76 MHz to 108 MHz

-

f

left audio frequency V_RF= 1 mV; L = R;

90

output voltage

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

V_AFR

right audio

frequency output

voltage

V_RF= 1 mV; L = R;

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

60

75

90

mV

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 1.

Quick reference data …continued

V_CCA= V_CC(VCO)= V_CCD; AC values are given in RMS; for V_RFthe EMF value is given; unless

otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

(S+N)/N maximum signal

V_RF= 1 mV; L = R;

54

60

-

dB

plus noise-to-noise ∆f = 22.5 kHz; f_mod= 1 kHz;

ratio

de-emphasis = 75 µs;

_AF= 300 Hz to 15 kHz

B

α_cs(stereo)stereo channel

V_RF= 1 mV; R = L = 0 or

R = 0 and L = 1 including 9 %

pilot; ∆f = 75 kHz;

24

30

-

dB

separation

f_mod= 1 kHz; data byte 3

bit 3 = 0; data byte 4 bit 1 = 1

THD

total harmonic

distortion

V

_RF= 1 mV; L = R;

-

0.4

1

%

∆f = 75 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

[1] Low side and high side selectivity can be switched by changing the mixer from high side to low side LO

4. Ordering information

Table 2.

Ordering information

Type number Package

Name

Description

Version

TEA5767HN

HVQFN40 plastic thermal enhanced very thin quad ﬂat package; SOT618-1

no leads; 40 terminals; body 6 × 6 × 0.85 mm

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

3 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

6. Pinning information

6.1 Pinning

terminal 1

index area

1

2

30

29

28

27

26

25

24

23

22

21

n.c.

n..c.

CPOUT

VCOTANK1

VCOTANK2

LIMDEC2

LIMDEC1

TIFC

3

4

5

V

ref

CC(VCO)

DGND

TEA5767HN

6

MPXO

7

V

TMUTE

CCD

8

DATA

CLOCK

n.c.

V

AFR

V

AFL

9

10

n.c.

001aab363

Transparent top view

Fig 2. Pin conﬁguration

6.2 Pin description

Table 3.

Symbol

n.c.

Pin description

1

Description

not connected

CPOUT

VCOTANK1

VCOTANK2

V_CC(VCO)

DGND

2

charge pump output of synthesizer PLL

voltage controlled oscillator tuned circuit output 1

voltage controlled oscillator tuned circuit output 2

voltage controlled oscillator supply voltage

digital ground

3

4

5

6

V_CCD

7

digital supply voltage

DATA

8

bus data line input/output

CLOCK

n.c.

9

bus clock line input

10

not connected

WRITE/READ

BUSMODE

BUSENABLE

SWPORT1

SWPORT2

XTAL1

11

12

13

14

15

16

write/read control input for the 3-wire bus

bus mode select input

bus enable input

software programmable port 1

software programmable port 2

crystal oscillator input 1

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 3.

Symbol

XTAL2

PHASEFIL

PILFIL

n.c.

Pin description …continued

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

Description

crystal oscillator input 2

phase detector loop ﬁlter

pilot detector low-pass ﬁlter

not connected

n.c.

not connected

V_AFL

left audio frequency output voltage

right audio frequency output voltage

time constant for soft mute

FM demodulator MPX signal output

reference voltage

V_AFR

TMUTE

MPXO

V_ref

TIFC

time constant for IF center adjust

decoupling IF limiter 1

decoupling IF limiter 2

not connected

LIMDEC1

LIMDEC2

n.c.

not connected

I_gain

gain control current for IF ﬁlter

analog ground

AGND

V_CCA

analog supply voltage

RF input 1

RFI1

RFGND

RFI2

RF ground

RF input 2

TAGC

LOOPSW

n.c.

time constant RF AGC

switch output of synthesizer PLL loop ﬁlter

not connected

7. Functional description

7.1 Low-noise RF ampliﬁer

The Low Noise Ampliﬁer (LNA) input impedance together with the LC RF input circuit

deﬁnes an FM band ﬁlter. The gain of the LNA is controlled by the RF AGC circuit.

7.2 FM mixer

The FM quadrature mixer converts the FM RF (76 MHz to 108 MHz) to an IF of 225 kHz.

7.3 VCO

The varactor tuned LC VCO provides the Local Oscillator (LO) signal for the FM

quadrature mixer. The VCO frequency range is 150 MHz to 217 MHz.

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Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

7.4 Crystal oscillator

The crystal oscillator can operate with a 32.768 kHz clock crystal or a 13 MHz crystal. The

temperature drift of standard 32.768 kHz clock crystals limits the operational temperature

range from −10 °C to +60 °C.

The PLL synthesizer can be clocked externally with a 32.768 kHz, a 6.5 MHz or a 13 MHz

signal via pin XTAL2.

The crystal oscillator generates the reference frequency for:

• The reference frequency divider for the synthesizer PLL

• The timing for the IF counter

• The free-running frequency adjustment of the stereo decoder VCO

• The center frequency adjustment of the IF ﬁlters

7.5 PLL tuning system

The PLL synthesizer tuning system is suitable to operate with a 32.768 kHz or a 13 MHz

reference frequency generated by the crystal oscillator or applied to the IC from an

external source. The synthesizer can also be clocked via pin XTAL2 at 6.5 MHz. The PLL

tuning system can perform an autonomous search tuning function.

7.6 RF AGC

The RF AGC prevents overloading and limits the amount of intermodulation products

created by strong adjacent channels.

7.7 IF ﬁlter

Fully integrated IF ﬁlter.

7.8 FM demodulator

The FM quadrature demodulator has an integrated resonator to perform the phase shift of

the IF signal.

7.9 Level voltage generator and analog-to-digital converter

The FM IF analog level voltage is converted to 4 bits digital data and output via the bus.

7.10 IF counter

The IF counter outputs a 7-bit count result via the bus.

7.11 Soft mute

The low-pass ﬁltered level voltage drives the soft mute attenuator at low RF input levels.

The soft mute function can be switched off via the bus.

7.12 MPX decoder

The PLL stereo decoder is adjustment-free. The stereo decoder can be switched to mono

via the bus.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

7.13 Signal dependent mono to stereo blend

With a decreasing RF input level the MPX decoder blends from stereo to mono to limit the

output noise. The continuous mono to stereo blend can also be programmed via the bus

to an RF level depending switched mono to stereo transition. Stereo Noise Cancelling

(SNC) can be switched off via the bus.

7.14 Signal dependent AF response

The audio bandwidth will be reduced with a decreasing RF input level. This function can

be switched off via the bus.

7.15 Software programmable ports

Two software programmable ports (open-collector) can be addressed via the bus.

The port 1 (pin SWPORT1) function can be changed with write data byte 4 bit 0

(see Table 13). Pin SWPORT1 is then output for the ready ﬂag of read byte 1.

7.16 I²C-bus and 3-wire bus

The 3-wire bus and the I²C-bus operate with a maximum clock frequency of 400 kHz.

Before any READ or WRITE operation the pin BUSENABLE has to be HIGH for at

least 10 µs.

The I²C-bus mode is selected when pin BUSMODE is LOW, when pin BUSMODE is HIGH

the 3-wire bus mode is selected.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Power on:

Mute, stand-by activated

All other status is random

Complete initialization by

microprocessor is required

no

Write enable

activated?

yes

Reset bit counter:

Bits are clocked into the

receive register

Completed bytes are written to

the destinastion register

Use value of tuning memory:

Write result to the programmable

divider (also available at the bus)

Wait 10 ms. Have the signal level

available at the bus

Search

Mode?

no

yes

no

Signal

level OK?

yes

Reset IF counter and enable counting

Wait for result

Have the result available for the bus

yes

Search

Mode?

no

Search

upwards?

IF frequency

OK?

yes

Add 100 kHz to the tuning memory

Substract 100 kHz to the tuning memory

Set 'found' flag

Upper

yes

Lower

tuning limit

exceeded?

tuning limit

exceeded?

no

Set 'band limit' flag

001aae346

Fig 3. Flowchart auto search or preset

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

9 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

8. I²C-bus, 3-wire bus and bus-controlled functions

8.1 I²C-bus speciﬁcation

Information about the I²C-bus can be found in the brochure “The I²C-bus and how to use

it” (order number 9398 393 40011).

The standard I²C-bus speciﬁcation is expanded by the following deﬁnitions:

IC address: 110 0000b

Structure of the I²C-bus logic: slave transceiver

Subaddresses are not used

The maximum LOW-level input and the minimum HIGH-level input are speciﬁed to

0.2V_CCDand 0.45V_CCDrespectively.

The pin BUSMODE must be connected to ground to operate the IC with the I²C-bus.

Remark: The I²C-bus operates at a maximum clock frequency of 400 kHz. It is not

allowed to connect the IC to an I²C-bus operating at a higher clock rate.

8.1.1 Data transfer

Data sequence: address, byte 1, byte 2, byte 3, byte 4 and byte 5 (the data transfer has to

be in this order). The LSB = 0 of the address indicates a WRITE operation to the

TEA5767HN.

Bit 7 of each byte is considered as the MSB and has to be transferred as the ﬁrst bit of the

byte.

The data becomes valid bitwise at the appropriate falling edge of the clock. A STOP

condition after any byte can shorten transmission times.

When writing to the transceiver by using the STOP condition before completion of the

whole transfer:

• The remaining bytes will contain the old information

• If the transfer of a byte is not completed, the new bits will be used, but a new tuning

cycle will not be started

The IC can be switched into a low current Standby mode with the standby bit; the bus is

then still active. The standby current can be reduced by deactivating the bus interface

(pin BUSENABLE LOW). If the bus interface is deactivated (pin BUSENABLE LOW)

without the Standby mode being programmed, the IC maintains normal operation, but is

isolated from the bus lines.

The software programmable output (SWPORT1) can be programmed to operate as a

tuning indicator output. As long as the IC has not completed a tuning action,

pin SWPORT1 remains LOW. The pin becomes HIGH, when a preset or search tuning is

completed or when a band limit is reached.

The reference frequency divider of the synthesizer PLL is changed when the MSB in

byte 5 is set to logic 1. The tuning system can then be clocked via pin XTAL2 at 6.5 MHz.

TEA5767HN_4

Product data sheet

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

8.1.2 Power-on reset

At Power-on reset the mute is set, all other bits are set to LOW. To initialize the IC all bytes

have to be transferred.

8.2 I²C-bus protocol

(1)

(2)

(3)

S

ADDRESS (WRITE)

A

DATA BYTE(S)

A

DATA BYTE 1

0

P

001aae347

(1) S = START condition.

(2) A = acknowledge.

(3) P = STOP condition.

Fig 4. Write mode

(1)

(2)

S

ADDRESS (READ)

A

001aae348

(1) S = START condition.

(2) A = acknowledge.

Fig 5. Read mode

Table 4.

IC address

1

IC address byte

Mode

R/W^[1]

1

0

[1] Read or write mode:

a) 0 = write operation to the TEA5767HN.

b) 1 = read operation from the TEA5767HN.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

11 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

SDA

t

f

t

r

SU;DAT

t

LOW

BUF

t

f

HD;STA

SCL

t

SU;STO

HD;STA

t

HD;DAT

SU;STA

HIGH

t

HO;BUSEN

SU;BUSEN

BUSENABLE

001aae349

t_f= fall time of both SDA and SCL signals: 20 + 0.1C_b< t_f< 300 ns, where C_b= capacitive load on bus line in pF.

t_r= rise time of both SDA and SCL signals: 20 + 0.1C_b< t_f< 300 ns, where C_b= capacitive load on bus line in pF.

t_HD;STA= hold time (repeated) START condition. After this period, the ﬁrst clock pulse is generated: > 600 ns.

t_HIGH= HIGH period of the SCL clock: > 600 ns.

t_SU;STA= set-up time for a repeated START condition: > 600 ns.

t_HD;DAT= data hold time: 300 ns < t_HD;DAT< 900 ns.

Remark: 300 ns lower limit is added because the ASIC has no internal hold time for the SDA signal.

t_SU;DAT= data set-up time: t_SU;DAT> 100 ns. If ASIC is used in a standard mode I²C-bus system, t_SU;DAT> 250 ns.

t_SU;STO= set-up time for STOP condition: > 600 ns.

t_BUF= bus free time between a STOP and a START condition: > 600 ns.

C_b= capacitive load of one bus line: < 400 pF.

t_SU;BUSEN= bus enable set-up time: t_SU;BUSEN> 10 µs.

t_HO;BUSEN= bus enable hold time: t_HO;BUSEN> 10 µs.

Fig 6. I²C-bus timing diagram

8.3 3-wire bus speciﬁcation

The 3-wire bus controls the write/read, clock and data lines and operates at a maximum

clock frequency of 400 kHz.

Hint: By using the standby bit the IC can be switched into a low current Standby mode. In

Standby mode the IC must be in the WRITE mode. When the IC is switched to READ

mode, during standby, the IC will hold the data line down. The standby current can be

reduced by deactivating the bus interface (pin BUSENABLE LOW). If the bus interface is

deactivated (pin BUSENABLE LOW) without the Standby mode being programmed, the

IC maintains normal operation, but is isolated from the clock and data line.

8.3.1 Data transfer

Data sequence: byte 1, byte 2, byte 3, byte 4 and byte 5 (the data transfer has to be in this

order).

A positive edge at pin WRITE/READ enables the data transfer into the IC. The data has to

be stable at the positive edge of the clock. Data may change while the clock is LOW and is

written into the IC on the positive edge of the clock. Data transfer can be stopped after the

transmission of new tuning information with the ﬁrst two bytes or after each following byte.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

12 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

A negative edge at pin WRITE/READ enables the data transfer from the IC. The

WRITE/READ pin changes while the clock is LOW. With the negative edge at

pin WRITE/READ the MSB of the ﬁrst byte occurs at pin DATA.

The bits are shifted on the negative clock edge to pin DATA and can be read on the

positive edge.

To do two consecutive read or write actions, pin WRITE/READ has to be toggled for at

least one clock period. When a search tuning request is sent, the IC autonomously starts

searching the FM band; the search direction and search stop level can be selected. When

a station with a ﬁeld strength equal to or greater than the stop level is found, the tuning

system stops and the ready ﬂag bit is set to HIGH. When, during search, a band limit is

reached, the tuning system stops at the band limit and the band limit ﬂag bit is set to

HIGH. The ready ﬂag is also set to HIGH in this case.

The software programmable output (SWPORT1) can be programmed to operate as a

tuning indicator output. As long as the IC has not completed a tuning action,

pin SWPORT1 remains LOW. The pin becomes HIGH, when a preset or search tuning is

completed or when a band limit is reached.

The reference frequency divider of the synthesizer PLL is changed when the MSB in

byte 5 is set to logic 1. The tuning system can then be clocked via pin XTAL2 at 6.5 MHz.

8.3.2 Power-on reset

At Power-on reset the mute is set, all other bits are random. To initialize the IC all bytes

have to be transferred.

8.4 Writing data

50 %

WRITE_READ

t

W(write)

t

su(clk)

CLOCK

50 %

t

h(write)

t

su(write)

valid data

50 %

DATA

mhc250

Fig 7. 3-wire bus write data

DATA BYTE 1

DATA BYTE 2

DATA BYTE 3

DATA BYTE 4

DATA BYTE 5

001aae350

Fig 8. Write mode

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

13 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 5.

7 (MSB)

MUTE

Format of 1st data byte

6

5

4

3

2

1

0 (LSB)

PLL8

SM

PLL13

PLL12

PLL11

PLL10

PLL9

Table 6.

Description of 1st data byte bits

Bit

Symbol

Description

7

MUTE

if MUTE = 1 then L and R audio are muted; if MUTE = 0 then L and R

audio are not muted

6

SM

Search mode: if SM = 1 then in search mode; if SM = 0 then not in

search mode

5 to 0

PLL[13:8]

setting of synthesizer programmable counter for search or preset

Table 7.

7 (MSB)

PLL7

Format of 2nd data byte

6

5

4

3

2

1

0 (LSB)

PLL0

PLL6

PLL5

PLL4

PLL3

PLL2

PLL1

Table 8.

Bit

Description of 2nd data byte bits

Symbol

Description

setting of synthesizer programmable counter for search or preset

7 to 0

PLL[7:0]

Table 9.

7 (MSB)

SUD

Format of 3rd data byte

6

5

4

3

2

1

0 (LSB)

SSL1

SSL0

HLSI

MS

MR

ML

SWP1

Table 10. Description of 3rd data byte bits

Bit

Symbol

Description

7

SUD

Search Up/Down: if SUD = 1 then search up; if SUD = 0 then search

down

6 and 5

4

SSL[1:0]

HLSI

Search Stop Level: see Table 11

High/Low Side Injection: if HLSI = 1 then high side LO injection; if

HLSI = 0 then low side LO injection

3

2

1

0

MS

Mono to Stereo: if MS = 1 then forced mono; if MS = 0 then stereo

ON

MR

Mute Right: if MR = 1 then the right audio channel is muted and

forced mono; if MR = 0 then the right audio channel is not muted

ML

Mute Left: if ML = 1 then the left audio channel is muted and forced

mono; if ML = 0 then the left audio channel is not muted

SWP1

Software programmable port 1: if SWP1 = 1 then port 1 is HIGH; if

SWP1 = 0 then port 1 is LOW

Table 11. Search stop level setting

SSL1

SSL0

Search stop level

0

1

0

1

0

1

not allowed in search mode

low; level ADC output = 5

mid; level ADC output = 7

high; level ADC output = 10

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 12. Format of 4th data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

SI

SWP2

STBY

BL

XTAL

SMUTE

HCC

SNC

Table 13. Description of 4th data byte bits

Bit

Symbol

Description

7

SWP2

Software programmable port 2: if SWP2 = 1 then port 2 is HIGH; if

SWP2 = 0 then port 2 is LOW

6

5

STBY

BL

Standby: if STBY = 1 then in Standby mode; if STBY = 0 then not in

Standby mode

Band Limits: if BL = 1 then Japanese FM band; if BL = 0 then

US/Europe FM band

4

3

XTAL

Clock frequency: see Table 16

SMUTE

Soft Mute: if SMUTE = 1 then soft mute is ON; if SMUTE = 0 then soft

mute is OFF

2

1

0

HCC

SNC

SI

High Cut Control: if HCC = 1 then high cut control is ON; if HCC = 0

then high cut control is OFF

Stereo Noise Cancelling: if SNC = 1 then stereo noise cancelling is

ON; if SNC = 0 then stereo noise cancelling is OFF

Search Indicator: if SI = 1 then pin SWPORT1 is output for the ready

ﬂag; if SI = 0 then pin SWPORT1 is software programmable port 1

Table 14. Format of 5th data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

PLLREF

DTC

-

Table 15. Description of 5th data byte bits

Bit

Symbol

Description

7

PLLREF

if PLLREF = 1 then the 6.5 MHz reference frequency for the PLL is

enabled; if PLLREF = 0 then the 6.5 MHz reference frequency for the

PLL is disabled; see Table 16

6

DTC

-

if DTC = 1 then the de-emphasis time constant is 75 µs; if DTC = 0

then the de-emphasis time constant is 50 µs

5 to 0

not used; position is don’t care

Table 16. Clock bits setting

PLLREF XTAL Clock frequency

0

1

0

1

0

1

13 MHz

32.768 kHz

6.5 MHz

not allowed

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

8.5 Reading data

50 %

WRITE_READ

t

W(read)

t

HIGH

su(clk)

CLOCK

50 %

t

LOW

t

h

d

50 %

DATA

mhc249

Fig 9. 3-wire bus read data

DATA BYTE 1

DATA BYTE 2

DATA BYTE 3

DATA BYTE 4

DATA BYTE 5

001aae350

Fig 10. Read mode

Table 17. Format of 1st data byte

7 (MSB)

RF

6

5

4

3

2

1

0 (LSB)

PLL8

BLF

PLL13

PLL12

PLL11

PLL10

PLL9

Table 18. Description of 1st data byte bits

Bit

Symbol

Description

7

RF

Ready Flag: if RF = 1 then a station has been found or the band limit

has been reached; if RF = 0 then no station has been found

6

BLF

Band Limit Flag: if BLF = 1 then the band limit has been reached; if

BLF = 0 then the band limit has not been reached

5 to 0

PLL[13:8]

setting of synthesizer programmable counter after search or preset

Table 19. Format of 2nd data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

PLL0

PLL7

PLL6

PLL5

PLL4

PLL3

PLL2

PLL1

Table 20. Description of 2nd data byte bits

Bit

Symbol

Description

setting of synthesizer programmable counter after search or preset

7 to 0

PLL[7:0]

Table 21. Format of 3rd data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

IF0

STEREO IF6

IF5

IF4

IF3

IF2

IF1

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

16 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 22. Description of 3rd data byte bits

Bit

Symbol

Description

7

STEREO

Stereo indication: if STEREO = 1 then stereo reception; if

STEREO = 0 then mono reception

6 to 0

PLL[13:8]

IF counter result

Table 23. Format of 4th data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

LEV3

LEV2

LEV1

LEV0

CI3

CI2

CI1

0

Table 24. Description of 4th data byte bits

Bit

Symbol

LEV[3:0]

CI[3:1]

-

Description

7 to 4

3 to 1

0

level ADC output

Chip Identiﬁcation: these bits have to be set to logic 0

this bit is internally set to logic 0

Table 25. Format of 5th data byte

7 (MSB)

6

5

4

3

2

1

0 (LSB)

0

Table 26. Description of 5th data byte bits

Bit

Symbol

Description

reserved for future extensions; these bits are internally set to logic 0

7 to 0

-

9. Internal circuitry

Table 27. Internal circuitry

1

Symbol

n.c.

Equivalent circuit

2

CPOUT

270 Ω

2

mhc285

3

4

VCOTANK1

VCOTANK2

3

4

120 Ω

mhc286

5

V_CC(VCO)

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

17 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 27. Internal circuitry

6

Symbol

DGND

V_CCD

Equivalent circuit

7

8

DATA

8

6

mhc287

9

CLOCK

270 Ω

9

6

mhc288

10

11

n.c.

WRITE/READ

270 Ω

11

6

mhc289

mhc290

mhc291

12

BUSMODE

270 Ω

12

6

13

BUSENABLE

150 Ω

13

6

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

18 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 27. Internal circuitry

Symbol

Equivalent circuit

14

SWPORT1

150 Ω

14

6

mhc292

15

SWPORT2

150 Ω

15

6

mhc293

16

17

XTAL1

XTAL2

16

17

mhc294

18

PHASEFIL

18

33

mhc295

19

PILFIL

270 Ω

19

33

mhc296

20

21

22

n.c.

V_AFL

10 Ω

22

33

mhc297

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

19 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 27. Internal circuitry

Symbol

Equivalent circuit

23

V_AFR

10 Ω

23

33

mhc298

24

TMUTE

24

1 kΩ

33

mhc299

25

MPXO

150 Ω

25

33

mhc300

26

V_ref

26

33

mhc301

27

TIFC

40 kΩ

27

mhc302

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

20 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 27. Internal circuitry

Symbol

Equivalent circuit

28

LIMDEC1

270 Ω

28

mhc303

29

LIMDEC2

270 Ω

29

mhc304

30

31

32

n.c.

I_gain

32

mhc305

33

34

35

36

37

AGND

V_CCA

RFI1

RFGND

RFI2

35

36

37

mhc306

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

21 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 27. Internal circuitry

Symbol

Equivalent circuit

38

TAGC

38

36

mhc307

39

LOOPSW

5

39

mhc308

40

n.c.

10. Limiting values

Table 28. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_VCOTANK1

VCO tuned circuit output

voltage 1

−0.3

+8

V

V_VCOTANK2

VCO tuned circuit output

voltage 2

−0.3

+8

V

V_CCD

V_CCA

T_stg

digital supply voltage

analog supply voltage

storage temperature

ambient temperature

−0.3

+5

V

−0.3

+8

V

−55

+150

+75

°C

V

T_amb

V_esd

−10

[1]

[2]

[1]

[2]

electrostatic discharge

voltage

all pins except

pin DATA

−200

−2000

−150

−2000

+200

+2000

+200

+2000

V

pin DATA

V

[1] Machine model (R = 0 Ω, C = 200 pF).

[2] Human body model (R = 1.5 kΩ, C = 100 pF).

11. Thermal characteristics

Table 29. Thermal characteristics

Symbol

Parameter

Conditions

Typ

29

Unit

K/W

R_th(j-a)

thermal resistance from junction to in free air

ambient

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

22 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

12. Static characteristics

Table 30. Static characteristics

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supply voltages^[1]

V_CCA

analog supply voltage

2.5

3.0

5.0

V

V_CC(VCO)

voltage controlled

oscillator supply voltage

V_CCD

digital supply voltage

2.5

3.0

5.0

V

Supply currents

I_CCA

analog supply current

operating

V_CCA= 3 V

6.0

6.2

8.4

8.6

10.5

10.7

mA

V_CCA= 5 V

Standby mode

V_CCA= 3 V

-

3

6

µA

V_CCA= 5 V

3.2

6.2

I_CC(VCO)

voltage controlled

operating

oscillator supply current

V_VCOTANK1= V_VCOTANK2= 3 V

V_VCOTANK1= V_VCOTANK2= 5 V

Standby mode

560

570

750

760

940

950

µA

V_VCOTANK1= V_VCOTANK2= 3 V

V_VCOTANK1= V_VCOTANK2= 5 V

operating

-

1

2

µA

1.2

2.2

I_CCD

digital supply current

V_CCD= 3 V

2.1

3.0

3.9

mA

V_CCD= 5 V

2.25

3.15

4.05

Standby mode; V_CCD= 3 V

bus enable line HIGH

bus enable line LOW

Standby mode; V_CCD= 5 V

bus enable line HIGH

bus enable line LOW

30

11

56

19

80

26

µA

50

20

78

33

105

45

µA

[1] V_CCA, V_CC(VCO)and V_CCDmust not differ more than 200 mV.

Table 31. DC operating points, unloaded DC voltage

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; unless otherwise speciﬁed.

Operating Conditions

point

Min

Typ

Max

Unit

V_CPOUT

0.1

-

V

_CC(VCO)− 0.1

V

V_XTAL2

data byte 4 bit 4 = 1

1.64

1.68

1.64

1.68

0.4

1.72

1.75

1.72

1.75

1.2

1.8

1.82

1.8

1.82

data byte 4 bit 4 = 0

data byte 4 bit 4 = 1

data byte 4 bit 4 = 0

V_XTAL2

V_PHASEFIL

V_CCA− 0.4

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

23 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 31. DC operating points, unloaded DC voltage …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; unless otherwise speciﬁed.

Operating Conditions

point

Min

Typ

Max

Unit

V_PILFIL

0.65

720

1.5

0.9

1.3

V

V_AFL

f_RF= 98 MHz; V_RF= 1 mV

850

1.65

815

1.55

1.44

1.98

530

1.03

1.57

940

1.8

mV

V

V_AFR

f_RF= 98 MHz; V_RF= 1 mV

V_RF= 0 V

V_TMUTE

V_MPXO

V_ref

f_RF= 98 MHz; V_RF= 1 mV

680

1.45

1.34

1.86

480

0.93

1

950

1.65

1.54

2.1

mV

V

V_TIFC

V

V_LIMDEC1

V_LIMDEC2

V_Igain

V

2.1

V

580

1.13

2

mV

V

V_RFI1

V_RFI2

V

V_TAGC

V_RF= 0 V

V

13. Dynamic characteristics

Table 32. Dynamic characteristics

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

Voltage controlled oscillator

f_oscoscillator frequency

Parameter

Conditions

Min

Typ

Max

Unit

150

-

217

MHz

Crystal oscillator

Circuit input: pin XTAL2

V_i(osc)

R_i

oscillator input voltage

oscillator externally clocked

data byte 4 bit 4 = 0

140

-

350

mV

input resistance

2

3

4

kΩ

data byte 4 bit 4 = 1

230

330

430

C_i

input capacitance

oscillator externally clocked

data byte 4 bit 4 = 0

3.9

5

5.6

6

7.3

7

pF

data byte 4 bit 4 = 1

Crystal: 32.768 kHz

f_r

series resonance

data byte 4 bit 4 = 1

-

32.768

-

kHz

frequency

∆f/f_r

frequency deviation

shunt capacitance

series resistance

temperature drift

−20 × 10⁻⁶

-

+20 × 10⁻⁶

3.5

C₀

-

pF

R_S

-

80

kΩ

∆f_r/f_{r(25 °C)}

−10 °C < T_amb< +60 °C

−50 × 10⁻⁶

+50 × 10⁻⁶

Crystal: 13 MHz

f_r

series resonance

frequency

data byte 4 bit 4 = 0

-

13

-

MHz

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

24 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 32. Dynamic characteristics …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

∆f/f_r

Parameter

Conditions

Min

−30 × 10⁻⁶

Typ

Max

+30 × 10⁻⁶

Unit

frequency deviation

shunt capacitance

motional capacitance

series resistance

temperature drift

-

C₀

-

4.5

pF

fF

C_mot

1.5

3.0

R_S

-

100

+30 × 10⁻⁶

kΩ

∆f_r/f_{r(25 °C)}

−40 °C < T_amb< +85 °C

−30 × 10⁻⁶

Synthesizer

Programmable divider^[1]

N_prog

programmable divider

ratio

data byte 1 = XX11 1111;

data byte 2 = 1111 1110

-

8191

data byte 1 = XX01 0000;

data byte 2 = 0000 0000

2048

-

∆N_step

programmable divider

step size

1

Reference frequency divider

N_refcrystal oscillator divider

ratio

data byte 4 bit 4 = 0

-

260

130

-

data byte 5 bit 7 = 1;

data byte 4 bit 4 = 0

data byte 4 bit 4 = 1

-

1

-

Charge pump: pin CPOUT

I_sink

charge pump peak sink

current

0.2 V < V_CPOUT

_VCOTANK2− 0.2 V;

_VCO> f_ref× N_prog

<

0.5

µA

V

f

I_source

charge pump peak source 0.2 V < V_CPOUT

current

<

-

−0.5

-

V

f

_VCOTANK2− 0.2 V;

_VCO< f_ref× N_prog

IF counter

V_RF

RF input voltage for

correct IF count

12

18

µV

N_IF

IF counter length

-

7

-

bit

N_precount

T_count(IF)

IF counter prescaler ratio

IF counter period

-

64

-

f_xtal= 32.768 kHz

f_xtal= 13 MHz

-

15.625

15.754

4.096

4.0625

-

ms

-

ms

RES_count(IF)IF counter resolution

f_xtal= 32.768 kHz

f_xtal= 13 MHz

-

kHz

-

IF_count

IF counter result for

search tuning stop

f_xtal= 32.768 kHz

f_xtal= 13 MHz

29h

30h

3Dh

-

Pins DATA, CLOCK, WRITE/READ, BUSMODE and BUSENABLE

R_i

input resistance

10

-

MΩ

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

25 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 32. Dynamic characteristics …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Software programmable ports

Pin SWPORT1

I_sink(max)

maximum sink current

data byte 3 bit 0 = 0;

data byte 4 bit 0 = 0;

V

500

-

µA

_SWPORT1< 0.5 V

maximum leakage current data byte 3 bit 0 = 1;

_SWPORT1< 5 V

I_leak(max)

−1

+1

V

Pin SWPORT2

I_sink(max)

maximum sink current

data byte 4 bit 7 = 0;

_SWPORT1< 0.5 V

500

-

µA

V

I_leak(max)

maximum leakage current data byte 4 bit 7 = 1;

_SWPORT1< 5 V

−1

+1

V

FM signal channel

FM RF input

f_FM(ant)

R_i

FM input frequency

76

75

-

108

125

MHz

input resistance at pins

100

Ω

RFI1 and RFI2 to RFGND

C_i

input capacitance at pins

RFI1 and RFI2 to RFGND

2.5

-

4

2

6

pF

V_RF

RF sensitivity input

voltage

f_RF= 76 MHz to 108 MHz;

∆f = 22.5 kHz; f_mod= 1 kHz;

(S+N)/N = 26 dB; L = R;

de-emphasis = 75 µs;

3.5

µV

B

_AF= 300 Hz to 15 kHz

∆f₁= 200 kHz; ∆f₂= 400 kHz;

f_tune= 76 MHz to 108 MHz

IP3_in

in-band 3rd-order

intercept point related to

81

82

84

85

-

dBµV

V_RFI1-RFI2(peak value)

IP3_out

out-band 3rd-order

intercept point related to

∆f₁= 4 MHz; ∆f₂= 8 Hz;

f_tune= 76 MHz to 108 MHz

V_RFI1-RFI2(peak value)

RF AGC

[2]

V_RF1

RF input voltage for start f_RF1= 93 MHz; f_RF2= 98 MHz;

66

72

78

dBµV

of AGC

V_RF2= 50 dBµV;

∆V

14 mV

-------------------

3 dBµV

TMUTE

<

------------------------

V

RF1

IF ﬁlter

f_IF

IF ﬁlter center frequency

IF ﬁlter bandwidth

215

85

225

94

235

102

-

kHz

dB

B_IF

[3]

S₊₂₀₀

high side 200 kHz

selectivity

∆f = +200 kHz;

_tune= 76 MHz to 108 MHz

39

43

f

S₋₂₀₀

S₊₁₀₀

low side 200 kHz

selectivity

∆f = −200 kHz;

_tune= 76 MHz to 108 MHz

32

8

36

12

-

dB

f

high side 100 kHz

selectivity

∆f = +100 kHz;

f_tune= 76 MHz to 108 MHz

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

26 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 32. Dynamic characteristics …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[3]

S_-100

low side 100 kHz

selectivity

∆f = −100 kHz;

8

12

-

dB

f

_tune= 76 MHz to 108 MHz

f_tune= 76 MHz to 108 MHz;

_RF= 50 dBµV

IR

image rejection

24

30

-

dB

V

FM IF level detector and mute voltage

V_RF

RF input voltage for start read mode data byte 4 bit 4 = 1

of level ADC

2

3

5

µV

∆V_step

level ADC step size

dB

Pin TMUTE

V_level

level output DC voltage

slope of level voltage

output resistance

V_RF= 0 µV

1.55

1.60

150

1.65

1.70

165

1.80

1.85

180

V

V_RF= 3 µV

V_level(slope)

V_RF= 10 µV to 500 µV

mV

-------------

20 dB

R_o

280

60

400

75

520

90

kΩ

FM demodulator: pin MPXO

V_MPXO

demodulator output

voltage

V_RF= 1 mV; L = R;

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs;

mV

B_AF= 300 Hz to 15 kHz

(S+N)/N

maximum signal plus

noise-to-noise ratio

V

_RF= 1 mV; L = R;

54

60

-

dB

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs;

B_AF= 300 Hz to 15 kHz

THD

total harmonic distortion

AM suppression

V

_RF= 1 mV; L = R;

-

0.5

-

1.5

-

%

∆f = 75 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

α_AM

V_RF= 300 µV; L = R;

40

dB

∆f = 22.5 kHz; f_mod= 1 kHz;

m = 0.3; de-emphasis = 75 µs;

B_AF= 300 Hz to 15 kHz

R_o

demodulator output

resistance

-

500

30

Ω

I_sink

demodulator output sink

current

µA

Soft mute

V_RF

RF input voltage for soft

mute start

α_mute= 3 dB; data byte 4

bit 3 = 1

3

5

10

30

µV

α_mute

mute attenuation

V_RF= 1 µV; L = R;

10

20

dB

∆f = 22.5 kHz; f_mod= 1 kHz

de-emphasis = 75 µs;

B_AF= 300 Hz to 15 kHz;

data byte 4 bit 3 = 1

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

27 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 32. Dynamic characteristics …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MPX decoder

V_AFL

left audio frequency

output voltage

V_RF= 1 mV; L = R;

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

60

75

90

mV

V_AFR

right audio frequency

output voltage

V_RF= 1 mV; L = R;

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

60

75

90

mV

R_AFL

left audio frequency

output resistance

-

50

-

Ω

R_AFR

right audio frequency

output resistance

-

Ω

I_sink(AFL)

I_sink(AFR)

left audio frequency

output sink current

170

µA

right audio frequency

output sink current

-

V_MPXIN(max)input overdrive margin

THD < 3 %

4

-

dB

V_AFL

left audio frequency

V_RF= 1 mV; L = R;

-1

+1

output voltage difference ∆f = 75 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

V_AFR

right audio frequency

output voltage difference ∆f = 75 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

V_RF= 1 mV; L = R;

-1

-

+1

-

dB

α_cs(stereo)

stereo channel separation V_RF= 1 mV; R = L = 0 or R = 0

and L = 1 including 9 % pilot;

∆f = 75 kHz; f_mod= 1 kHz;

24

30

data byte 3 bit 3 = 0;

data byte 4 bit 1 = 1

(S+N)/N

maximum signal plus

noise-to-noise ratio

V

_RF= 1 mV; L = R;

54

60

-

dB

∆f = 22.5 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs;

B_AF= 300 Hz to 15 kHz

THD

α_pilot

∆f_pilot

total harmonic distortion

V

_RF= 1 mV; L = R;

-

0.4

50

1

-

%

∆f = 75 kHz; f_mod= 1 kHz;

de-emphasis = 75 µs

pilot suppression

measured at pins V_AFL

and V_AFR

related to ∆f = 75 kHz;

40

dB

f_mod= 1 kHz;

de-emphasis = 75 µs

V_RF= 1 mV; read mode

data byte 3 bit 7 = 1

data byte 3 bit 7 = 0

V_RF= 1 mV

stereo pilot frequency

deviation

-

3.6

3

5.8

kHz

dB

1

2

-

pilot switch hysteresis

-

∆f

pilot1

----------------

∆f

pilot2

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

28 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

Table 32. Dynamic characteristics …continued

V_CCA= V_VCOTANK1= V_VCOTANK2= V_CCD= 2.7 V; T_amb= 25 °C; measured in the circuit of Figure 13; AC values are given in

RMS; for V_RFthe EMF value is given; unless otherwise speciﬁed.

Symbol

High cut control

TC_de-emde-emphasis time

constant

Parameter

Conditions

Min

Typ

Max

Unit

V_RF= 1 mV

data byte 5 bit 6 = 0

data byte 5 bit 6 = 1

V_RF= 1 µV

38

57

50

75

62

93

µs

data byte 5 bit 6 = 0

data byte 5 bit 6 = 1

114

171

150

225

186

279

µs

Mono to stereo blend control

α_cs(stereo)

stereo channel separation V_RF= 45 µV; R = L = 0 or

R = 0 and L = 1 including 9 %

pilot; ∆f = 75 kHz; f_mod= 1 kHz;

data byte 3 bit 3 = 0;

4

10

16

dB

data byte 4 bit 1 = 1

Mono to stereo switched

α_cs(stereo)stereo channel separation R = L = 0 or R = 0 and L = 1

switching from mono to including 9 % pilot;

stereo with increasing RF ∆f = 75 kHz; f_mod= 1 kHz;

input level

data byte 3 bit 3 = 0;

data byte 4 bit 1 = 0

V

_RF= 1 mV

24

-

dB

V_RF= 20 µV

1

Bus-driven mute functions

Tuning mute

α_mute

V_AFLand V_AFRmuting

depth

data byte 1 bit 7 = 1

data byte 3 bit 1 = 1;

-

−60

−80

dB

α_mute(L)

α_mute(R)

V_AFLmuting depth

f

_AF= 1 kHz; R_load(L)< 30 kΩ

data byte 3 bit 2 = 1;

_AF= 1 kHz; R_load(R)< 30 kΩ

V_AFRmuting depth

f

[1] Calculation of this 14-bit word can be done as follows:

4 × ( f

+ f

)

4 × ( f

– f

IF

)

RF

IF

RF

formula for high side injection: N =

; formula for low side injection: N =

--------------------------------------

f

ref

where:

N = decimal value of PLL word;

f_RF= the wanted tuning frequency [Hz];

f_IF= the intermediate frequency [Hz] = 225 kHz;

f_ref= the reference frequency [Hz] = 32.768 kHz for the 32.768 kHz crystal; f_ref= 50 kHz for the 13 MHz crystal or when externally

clocked with 6.5 MHz.

6

3

4 × (100 × 10 + 225 × 10 )

--------------------------------------------------------------------

32768

Example for receiving a channel at 100 MHz with high side injection: N =

= 12234

The PLL word becomes 2FCAh.

[2]

V_RFin Figure 13 is replaced by V_RF1+ V_RF2. The radio is tuned to 98 MHz (high side injection).

[3] Low side and high side selectivity can be switched by changing the mixer from high side to low side LO injection.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

14. FM characteristics

001aae351

4

0

V

THD+N

(%)

AFL,

(1)

AFR

(dB)

−20

3

2

−40

−60

−80

(2)

1

(3)

0

−1

2

3

4

5

6

10

1

10

V

(µV)

RF

(1) Mono signal, no softmute, ∆f = 22,5 kHz.

(2) Noise in mono mode, no softmute.

(3) Total Harmonic Distortion (THD), ∆f = 75 kHz.

Fig 11. FM mono characteristics

001aae352

4

0

(1)

V

THD+N

(%)

AFL,

V

(dB)

−20

AFR

(2)

3

2

1

0

−40

−60

−80

(3)

(4)

−1

2

3

4

5

6

10

1

10

V

(µV)

RF

(1) Right channel with modulation right, SNC on, ∆f = 67,5 kHz + 6,75 kHz pilot.

(2) Left channel with modulation left, SNC on, ∆f = 67,5 kHz + 6,75 kHz pilot.

(3) Noise in stereo mode, SNC on, ∆f = 0 kHz + 6,75 kHz pilot.

(4) Total Harmonic Distortion (THD), ∆f = 67,5 kHz + 6,75 kHz pilot.

Fig 12. FM stereo characteristics

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Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

15. I²C-bus characteristics

Table 33. Digital levels and timing

Symbol Parameter

Digital inputs

Conditions

Min

Max

Unit

V_IH

V_IL

HIGH-level input voltage

LOW-level input voltage

0.45V_CCD

-

V

0.2V_CCD

Digital outputs

I_sink(L)LOW-level sink current

V_OL

500

-

µA

LOW-level output voltage

clock input frequency

clock HIGH time

I_OL= 500 µA

450

mV

Timing

f_clk

I²C-bus enabled

-

400

kHz

µs

ns

3-wire bus enabled

I²C-bus enabled

-

400

t_HIGH

1

-

3-wire bus enabled

I²C-bus enabled

1

-

t_LOW

clock LOW time

1

-

3-wire bus enabled

1

-

t_W(write)pulse width for write enable

t_W(read)pulse width for read enable

1

-

1

-

t_su(clk)

t_h(out)

t_d(out)

clock set-up time

300

10

-

read mode data output hold time 3-wire bus enabled

-

ns

read mode output delay time

3-wire bus enabled

400

ns

t_su(write)write mode set-up time

100

-

ns

t_h(write)

write mode hold time

ns

16. Test information

Table 34. Component list for Figure 1 and Figure 13

Component

Parameter

Value

Tolerance Type

Manufacturer

R1

resistor with low

18 kΩ

±1 %

RC12G

Philips

temperature coefﬁcient

D1 and D2

L1

varicap for VCO tuning

RF band ﬁlter coil

VCO coil

-

BB202

Philips

120 nH

33 nH

-

±2 %

Q_min= 40

NX4025GA

L2 and L3

XTAL13MHz

C_pull

±2 %

13 MHz crystal

-

pulling capacitor for

NX4025GA

10 pF

XTAL32768Hz 32,768 kHz crystal

-

[1]

C_pull

pulling capacitor for

XTAL32768Hz

C_load

[1] Value of the C_pullmust be as close as possible to the value of C_loadof the crystal.

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Product data sheet

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

17. Package outline

HVQFN40: plastic thermal enhanced very thin quad flat package; no leads;

40 terminals; body 6 x 6 x 0.85 mm

SOT618-1

D

B

A

terminal 1

index area

A

E

1

c

detail X

C

e

1

y

1/2 e

e

v

M

C

b

C

A

B

1

11

20

w

L

21

10

e

E

h

2

1/2 e

1

30

terminal 1

index area

40

31

D

X

h

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

A

(1)

UNIT

A

b

c

E

e

2

y

D

E

L

v

w

y

1

h

1

h

max.

0.05 0.30

0.00 0.18

6.1

5.9

4.25

3.95

6.1

5.9

4.25

3.95

0.5

0.3

mm

0.05 0.1

1

0.2

0.5

4.5

0.1

0.05

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

01-08-08

02-10-22

SOT618-1

- - -

MO-220

- - -

Fig 14. Package outline SOT618-1 (HVQFN40)

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

18. Soldering

18.1 Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology. A more in-depth account of

soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface mount IC packages. Wave

soldering can still be used for certain surface mount ICs, but it is not suitable for ﬁne pitch

SMDs. In these situations reﬂow soldering is recommended.

18.2 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and

binding agent) to be applied to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement. Driven by legislation and

environmental forces the worldwide use of lead-free solder pastes is increasing.

Several methods exist for reﬂowing; for example, convection or convection/infrared

heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)

vary between 100 seconds and 200 seconds depending on heating method.

Typical reﬂow peak temperatures range from 215 °C to 270 °C depending on solder paste

material. The top-surface temperature of the packages should preferably be kept:

• below 225 °C (SnPb process) or below 245 °C (Pb-free process)

– for all BGA, HTSSON..T and SSOP..T packages

– for packages with a thickness ≥ 2.5 mm

– for packages with a thickness < 2.5 mm and a volume ≥ 350 mm³so called

thick/large packages.

• below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a

thickness < 2.5 mm and a volume < 350 mm³so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

18.3 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices

(SMDs) or printed-circuit boards with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally

developed.

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward

pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

parallel to the transport direction of the printed-circuit board;

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

• For packages with leads on four sides, the footprint must be placed at a 45° angle to

the transport direction of the printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must be ﬁxed with a droplet of

adhesive. The adhesive can be applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C

or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated ﬂux will eliminate the need for removal of corrosive residues in most

applications.

18.4 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low voltage

(24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time must be

limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within

2 seconds to 5 seconds between 270 °C and 320 °C.

18.5 Package related soldering information

Table 35. Suitability of surface mount IC packages for wave and reﬂow soldering methods

Package^[1]

Soldering method

Wave

Reﬂow^[2]

BGA, HTSSON..T^[3], LBGA, LFBGA, SQFP,

SSOP..T^[3], TFBGA, VFBGA, XSON

not suitable

suitable

DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,

HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,

HVSON, SMS

not suitable^[4]

suitable

PLCC^[5], SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended^[5][6]

not recommended^[7]

not suitable

suitable

SSOP, TSSOP, VSO, VSSOP

CWQCCN..L^[8], PMFP^[9], WQCCN..L^[8]

suitable

not suitable

[1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);

order a copy from your Philips Semiconductors sales ofﬁce.

[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the

maximum temperature (with respect to time) and body size of the package, there is a risk that internal or

external package cracks may occur due to vaporization of the moisture in them (the so called popcorn

effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit

Packages; Section: Packing Methods.

[3] These transparent plastic packages are extremely sensitive to reﬂow soldering conditions and must on no

account be processed through more than one soldering cycle or subjected to infrared reﬂow soldering with

peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reﬂow oven. The package

body peak temperature must be kept as low as possible.

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Product data sheet

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TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the

solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink

on the top side, the solder might be deposited on the heatsink surface.

[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave

direction. The package footprint must incorporate solder thieves downstream and at the side corners.

[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is

deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger

than 0.65 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered

pre-mounted on ﬂex foil. However, the image sensor package can be mounted by the client on a ﬂex foil by

using a hot bar soldering process. The appropriate soldering proﬁle can be provided on request.

[9] Hot bar soldering or manual soldering is suitable for PMFP packages.

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

36 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

19. Revision history

Table 36. Revision history

Document ID

Release date

20060220

Data sheet status

Product data sheet

Change notice Supersedes

TEA5767HN_4

-

TEA5767HN_3

(9397 750 13531)

Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• Modiﬁed: Section 3 “Quick reference data” an EMF value remark is added to the header

description

• Added: Figure 3

• Modiﬁed: Section 13 “Dynamic characteristics” values of IF_countchanged and EMF value

remark is added to the header description

• Replaced: Figure 11 and Figure 12

• Modiﬁed: component list of Table 34 updated

TEA5767HN_3

(9397 750 13531)

20040920

20031112

20020913

Product data sheet

-

TEA5767HN_2

(9397 750 12071)

TEA5767HN_2

(9397 750 12071)

Preliminary speciﬁcation

TEA5767HN_1

(9397 750 09626)

TEA5767HN_1

-

(9397 750 09626)

TEA5767HN_4

Product data sheet

Rev. 04 — 20 February 2006

37 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

20. Legal information

20.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.semiconductors.philips.com.

to result in personal injury, death or severe property or environmental

20.2 Deﬁnitions

damage. Philips Semiconductors accepts no liability for inclusion and/or use

of Philips Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is for the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. Philips Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Philips Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Philips Semiconductors

sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet,

the full data sheet shall prevail.

Terms and conditions of sale — Philips Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation

of liability, unless explicitly otherwise agreed to in writing by Philips

20.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations

or warranties, expressed or implied, as to the accuracy or completeness of

such information and shall have no liability for the consequences of use of

such information.

Semiconductors. In case of any inconsistency or conﬂict between information

in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — Philips Semiconductors reserves the right to

make changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

20.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — Philips Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a Philips Semiconductors product can reasonably be expected

I²C-bus — logo is a trademark of Koninklijke Philips Electronics N.V.

21. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

TEA5767HN_4

Product data sheet

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38 of 39

TEA5767HN

Philips Semiconductors

Low-power FM stereo radio for handheld applications

22. Contents

1

2

3

4

5

General description . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 3

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4

17

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 33

18

18.1

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Introduction to soldering surface mount

packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 34

Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 34

Manual soldering . . . . . . . . . . . . . . . . . . . . . . 35

Package related soldering information. . . . . . 35

18.2

18.3

18.4

18.5

6

6.1

6.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 5

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5

19

Revision history . . . . . . . . . . . . . . . . . . . . . . . 37

7

Functional description . . . . . . . . . . . . . . . . . . . 6

Low-noise RF ampliﬁer. . . . . . . . . . . . . . . . . . . 6

FM mixer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

VCO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Crystal oscillator . . . . . . . . . . . . . . . . . . . . . . . . 7

PLL tuning system . . . . . . . . . . . . . . . . . . . . . . 7

RF AGC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

IF ﬁlter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

FM demodulator . . . . . . . . . . . . . . . . . . . . . . . . 7

Level voltage generator and analog-to-digital

20

Legal information . . . . . . . . . . . . . . . . . . . . . . 38

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 38

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 38

7.1

7.2

7.3

7.4

7.5

7.6

7.7

7.8

7.9

20.1

20.2

20.3

20.4

21

22

Contact information . . . . . . . . . . . . . . . . . . . . 38

Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

converter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

IF counter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Soft mute . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

MPX decoder . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Signal dependent mono to stereo blend. . . . . . 8

Signal dependent AF response . . . . . . . . . . . . 8

Software programmable ports . . . . . . . . . . . . . 8

I²C-bus and 3-wire bus . . . . . . . . . . . . . . . . . . . 8

7.10

7.11

7.12

7.13

7.14

7.15

7.16

8

I²C-bus, 3-wire bus and bus-controlled

functions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

I²C-bus speciﬁcation. . . . . . . . . . . . . . . . . . . . 10

Data transfer. . . . . . . . . . . . . . . . . . . . . . . . . . 10

Power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 11

I²C-bus protocol . . . . . . . . . . . . . . . . . . . . . . . 11

3-wire bus speciﬁcation . . . . . . . . . . . . . . . . . 12

Data transfer. . . . . . . . . . . . . . . . . . . . . . . . . . 12

Power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 13

Writing data . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Reading data . . . . . . . . . . . . . . . . . . . . . . . . . 16

8.1

8.1.1

8.1.2

8.2

8.3

8.3.1

8.3.2

8.4

8.5

9

Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . 17

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 22

Thermal characteristics. . . . . . . . . . . . . . . . . . 22

Static characteristics. . . . . . . . . . . . . . . . . . . . 23

Dynamic characteristics . . . . . . . . . . . . . . . . . 24

FM characteristics . . . . . . . . . . . . . . . . . . . . . . 30

I²C-bus characteristics . . . . . . . . . . . . . . . . . . 31

Test information. . . . . . . . . . . . . . . . . . . . . . . . 31

10

11

12

13

14

15

16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.semiconductors.philips.com.

For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 20 February 2006

Document identifier: TEA5767HN_4


型号：	TEA5767HN
厂家：	NXP
描述：	Low-power FM stereo radio for handheld applications 低功耗调频立体声收音机为手持式应用
文件：	总39页 (文件大小：200K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TEA5767HN [NXP]

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