TJA1021U/20 [NXP]
IC DATACOM, INTERFACE CIRCUIT, UUC, DIE, Network Interface;
| 型号： | TJA1021U/20 |
| 厂家： | 
NXP |
| 描述： | IC DATACOM, INTERFACE CIRCUIT, UUC, DIE, Network Interface 电信 电信集成电路 |
| 文件： | 总22页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TJA1021
LIN 2.0/SAE J2602 transceiver
Rev. 01 — 16 October 2006
Objective data sheet
1. General description
The TJA1021 is the interface between the Local Interconnect Network (LIN) master/slave
protocol controller and the physical bus in a LIN. It is primarily intended for in-vehicle
sub-networks using baud rates from 1 kBd up to 20 kBd and is LIN 2.0/SAE J2602
compliant. The TJA1021 is pin-to-pin compatible with the TJA1020 and improved on
ElectroStatic Discharge (ESD).
The transmit data stream of the protocol controller at the transmit data input (TXD) is
converted by the TJA1021 into a bus signal with optimized slew rate and wave shaping to
minimize ElectroMagnetic Emission (EME). The LIN bus output pin is pulled HIGH via an
internal termination resistor. For a master application an external resistor in series with a
diode should be connected between pin INH or pin VBAT and pin LIN. The receiver detects
the data stream at the LIN bus input pin and transfers it via pin RXD to the microcontroller.
In sleep mode the power consumption of the TJA1021 is very low, whereas in failure
modes the power consumption is reduced to a minimum.
2. Features
2.1 General
I LIN 2.0/SAE J2602 compliant
I Baud rate up to 20 kBd
I Very low ElectroMagnetic Emission (EME)
I High ElectroMagnetic Immunity (EMI)
I Passive behavior in unpowered state
I Input levels compatible with 3.3 V and 5 V devices
I Integrated termination resistor for LIN slave applications
I Wake-up source recognition (local or remote)
I Supports K-line like functions
I Pin-to-pin compatible with TJA1020
2.2 Low power management
I Very low current consumption in sleep mode with local and remote wake-up
2.3 Protections
I High ESD robustness: ≥ ±6 kV according to IEC 61000-4-2 for pins LIN, VBAT and
WAKE_N
I Transmit data (TXD) dominant time-out function
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
I Bus terminal and battery pin protected against transients in the automotive
environment (ISO 7637)
I Bus terminal short-circuit proof to battery and ground
I Thermally protected
3. Quick reference data
Table 1.
Quick reference data
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with
respect to ground; positive currents flow into the IC; typical values are given at VBAT = 12 V; unless
otherwise specified.[1]
Symbol Parameter
VBAT supply voltage on pin VBAT
IBAT
Conditions
Min
5.5
4
Typ
12
Max
27
Unit
V
operating mode
sleep mode
supply current on pin VBAT
7
10
µA
µA
standby mode;
bus recessive
150
450
1000
normal mode;
bus recessive
0.4
1
0.8
2
2
mA
mA
V
normal mode;
bus dominant
6
VLIN
voltage on pin LIN
with respect to
GND, VBAT and
VWAKE_N
−40
-
+40
Tvj
virtual junction temperature
−40
-
+150
°C
[1] All parameters are guaranteed over the virtual junction temperature range by design. Products are 100 %
tested at 125 °C ambient temperature on wafer level (pre-testing). Cased products are 100 % tested at
25 °C ambient temperature (final testing). Both pre-testing and final testing use correlated test conditions to
cover the specified temperature and power supply voltage range.
4. Ordering information
Table 2.
Ordering information
Type number[1]
Package
Name
Description
Version
TJA1021T/10;
TJA1021T/20
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TJA1021U/10;
TJA1021U/20
-
bare die; die dimensions: <tbd>
-
[1] TJA1021T/20, TJA1021U/20: for the version which supports baud rates up to 20 kBd;
TJA1021T/10, TJA1021U/10: for the version which supports baud rates up to 10.4 kBd (SAE J2602).
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
2 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
5. Block diagram
7
V
BAT
WAKE-UP
TIMER
3
WAKE_N
CONTROL
8
INH
SLEEP/
NORMAL
TIMER
TEMPERATURE
PROTECTION
2
4
SLP_N
TXD
6
LIN
TXD
TIME-OUT
TIMER
TJA1021
BUS
TIMER
1
RXD
RXD/
INT
5
FILTER
GND
001aae066
Fig 1. Block diagram
6. Pinning information
6.1 Pinning
1
2
3
4
8
7
6
5
RXD
SLP_N
WAKE_N
TXD
INH
V
BAT
TJA1021T
LIN
GND
001aae067
Fig 2. Pin configuration TJA1021T
Fig 3. Bonding pad locations (<tbd>)
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
3 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
6.2 Pin description
Table 3.
Symbol
RXD
Pin description
Pin
Description
1
receive data output (open-drain); active LOW after a wake-up
event
SLP_N
2
sleep control input (active LOW); controls inhibit output; resets
wake-up source flag on TXD and wake-up request on RXD
WAKE_N
TXD
3
4
5
6
7
8
local wake-up input (active LOW); negative edge triggered
transmit data input; active LOW output after a local wake-up event
GND
LIN
ground
LIN bus line input/output
battery supply
VBAT
INH
battery related inhibit output for controlling an external voltage
regulator; active HIGH after a wake-up event
Table 4.
Symbol
RXD
Bonding pad description
Pad
X[1]
Y[1]
Description
1
<tbd>
<tbd>
receive data output (open-drain); active LOW
after a wake-up event
SLP_N
2
<tbd>
<tbd>
sleep control input (active LOW); controls inhibit
output; resets wake-up source flag on TXD and
wake-up request on RXD
WAKE_N
TXD
3
4
<tbd>
<tbd>
<tbd>
<tbd>
local wake-up input (active LOW); negative
edge triggered
transmit data input; active LOW output after a
local wake-up event
GND
LIN
5
6
7
8
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
ground
LIN bus line input/output
battery supply
VBAT
INH
battery related inhibit output for controlling an
external voltage regulator; active HIGH after a
wake-up event
[1] All coordinates (µm) represent the position of the center of each pad with respect to the bottom left-hand
corner of the top aluminium layer (see Figure 3).
7. Functional description
The TJA1021 is the interface between the LIN master/slave protocol controller and the
physical bus in a Local Interconnect Network (LIN). The TJA1021 is LIN 2.0/SAE J2602
compliant and provides optimum ElectroMagnetic Compatibility (EMC) performance due
to wave shaping of the LIN output.
The /20 version of the TJA1021 is optimized for the maximum specified LIN transmission
speed of 20 kBd; the /10 version of the TJA1021 is optimized for the LIN transmission
speed of 10.4 kBd as specified by the SAE J2602.
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
4 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
7.1 Operating modes
The TJA1021 provides a mode of normal operation, an intermediate mode, a Power-up
mode and a very-low-power mode. Figure 4 shows the state diagram.
Power-on
t
> t
(SLP_N = 1)
gotonorm
INH: high
TERM. = 30 kΩ
RXD: floating
TXD: weak pull-down
Transmitter: off
Normal
INH: high
TERM. = 30 kΩ
RXD: receive data output
TXD: transmit data input
Transmitter: on
switching on V
BAT
t
> t
gotonorm
(SLP_N = 1)
t
> t
gotonorm
(SLP_N = 1)
t
> t
gotosleep
(SLP_N = 0)
Standby
INH: high
TERM. = 30 kΩ
RXD: low
Sleep
INH: floating
TERM. = high ohmic
RXD: floating
TXD: weak pull-down
Transmitter: off
TXD: wake source output
Transmitter: off
t
> t
WAKE_N
(WAKE_N = 0; after 1→0)
or t
> t
(LIN = 0→1; after LIN = 0)
BUS
001aae073
TERM.: slave termination resistor, connected between pins LIN and VBAT
.
Fig 4. State diagram
Table 5.
Mode
Operating modes
SLP_N TXD (output)
RXD
floating
INH
Transmitter Remarks
Sleep
0
weak pull-down
floating off
no wake-up request
detected
Standby[1]
0
weak pull-down if LOW[3]
remote wake-up;
strong pull-down if
local wake-up[2]
HIGH
off
wake-up request
detected; in this mode the
microcontroller can read
the wake-up source:
remote or local wake-up
[2][3][4]
Normal mode
1
HIGH: recessive
state
HIGH: recessive state HIGH
LOW: dominant state
normal mode
LOW: dominant
state
[5]
Power-on mode 0
weak pull-down
floating
HIGH
off
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
5 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
[1] The standby mode is entered automatically upon any local or remote wake-up event during sleep mode. Pin INH and the 30 kΩ
termination resistor at pin LIN are switched on.
[2] The internal wake-up source flag (set if a local wake-up did occur and fed to pin TXD) will be reset when entering normal mode (SLP_N
goes HIGH).
[3] The wake-up interrupt (on pin RXD) is released when entering normal mode (SLP_N goes HIGH).
[4] The normal mode is entered during a positive edge on SLP_N. As long as TXD is LOW, the transmitter is off. In the event of a
short-circuit to ground on pin TXD, the transmitter will be disabled.
[5] The power-on mode is entered after switching on VBAT
.
7.2 Sleep mode
This mode is the most power saving mode of the TJA1021. Despite its extreme low
current consumption, the TJA1021 can still be waken up remotely via pin LIN, or waken up
locally via pin WAKE_N, or activated directly via pin SLP_N. Filters at the inputs of the
receiver (LIN), of pin WAKE_N and of pin SLP_N are preventing unwanted wake-up
events due to automotive transients or EMI. All wake-up events have to be maintained for
a certain time period (tdom(LIN), twake(dom)WAKE_N and tgotonorm).
The sleep mode is initiated by a falling edge on the pin SLP_N in normal mode. To enter
the sleep mode successfully (INH becomes floating), the sleep command (pin
SLP_N = LOW) must be maintained for at least tgotosleep
.
In sleep mode the internal slave termination between pins LIN and VBAT is disabled to
minimize the power dissipation in case pin LIN is short-circuited to ground. Only a weak
pull-up between pins LIN and VBAT is present.
The sleep mode can be activated independently from the actual level on pin LIN, pin TXD
or pin WAKE_N. So it is guaranteed that the lowest power consumption is achievable even
in case of a continuous dominant level on pin LIN or a continuous LOW on pin WAKE_N.
When VBAT drops below the power-on-reset threshold Vth(POR)L, the TJA1021 enters sleep
mode.
7.3 Standby mode
The standby mode is entered automatically whenever a local or remote wake-up occurs
while the TJA1021 is in its sleep mode. These wake-up events activate pin INH and
enable the slave termination resistor at the pin LIN. As a result of the HIGH condition on
pin INH the voltage regulator and the microcontroller can be activated.
The standby mode is signalled by a LOW-level on pin RXD which can be used as an
interrupt for the microcontroller.
In the standby mode (pin SLP_N is still LOW), the condition of pin TXD (weak pull-down or
strong pull-down) indicates the wake-up source: weak pull-down for a remote wake-up
request and strong pull-down for a local wake-up request.
Setting pin SLP_N HIGH during standby mode results in the following events:
• An immediate reset of the wake-up source flag; thus releasing the possible strong
pull-down at pin TXD before the actual mode change (after tgotonorm) is performed
• A change into normal mode if the HIGH level on pin SLP_N has been maintained for a
certain time period (tgotonorm) while pin TXD is pulled HIGH
• An immediate reset of the wake-up request signal on pin RXD
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
6 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
7.4 Normal mode
In the normal mode the TJA1021 is able to transmit and receive data via the LIN bus line.
The receiver detects the data stream at the LIN bus input pin and transfers it via pin RXD
to the microcontroller (see Figure 1): HIGH at a recessive level and LOW at a dominant
level on the bus. The receiver has a supply voltage related threshold with hysteresis and
an integrated filter to suppress bus line noise. The transmit data stream of the protocol
controller at the TXD input is converted by the transmitter into a bus signal with optimized
slew rate and wave shaping to minimize EME. The LIN bus output pin is pulled HIGH via
an internal slave termination resistor. For a master application an external resistor in
series with a diode should be connected between pin INH or VBAT on one side and pin LIN
on the other side (see Figure 7).
Being in the sleep, standby or Power-up mode, the TJA1021 enters normal mode
whenever a HIGH level on pin SLP_N is maintained for a time of at least tgotonorm
.
The TJA1021 switches to sleep mode in case of a LOW-level on pin SLP_N, maintained
for a time of at least tgotosleep
.
7.5 Wake-up
When VBAT exceeds the power-on reset threshold voltage Vth(POR)H, the TJA1021 enters
the power-on mode. Though the TJA1021 is powered-up and INH is HIGH, both the
transmitter and receiver are still inactive. If SLP_N = 1 for t > tgotonorm, the TJA1021 enters
normal mode.
There are three ways to wake-up a TJA1021 which is in sleep mode:
1. Remote wake-up via a dominant bus state
2. Local wake-up via a negative edge at pin WAKE_N
3. Mode change (pin SLP_N is HIGH) from sleep mode to normal mode
7.6 Remote and local wake-up
A falling edge at pin WAKE_N followed by a LOW-level maintained for a certain time
period (twake(dom)WAKE_N) results in a local wake-up. The pin WAKE_N provides an internal
pull-up towards pin VBAT. In order to prevent EMI issues, it is recommended to connect an
unused pin WAKE_N to pin VBAT
.
A falling edge at pin LIN followed by a LOW-level maintained for a certain time period
(tdom(LIN)) and a rising edge at pin LIN respectively (see Figure 5) results in a remote
wake-up. It should be noted that the time period tdom(LIN) is measured either in normal
mode while TXD is HIGH, or in sleep mode irrespective of the status of pin TXD.
After a local or remote wake-up, pin INH is activated (it goes HIGH) and the internal slave
termination resistor is switched on. The wake-up request is indicated by a LOW active
wake-up request signal on pin RXD to interrupt the microcontroller.
7.7 Wake-up via mode transition
It is also possible to set pin INH HIGH with a mode transition towards normal mode via pin
SLP_N. This is useful for applications with a continuously powered microcontroller.
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
7 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
7.8 Wake-up source recognition
The TJA1021 can distinguish between a local wake-up request on pin WAKE_N and a
remote wake-up request via a dominant bus state. The wake-up source flag is set in case
the wake-up request was a local one. The wake-up source can be read on pin TXD in the
standby mode. If an external pull-up resistor on pin TXD to the power supply voltage of the
microcontroller has been added, a HIGH-level indicates a remote wake-up request (weak
pull-down at pin TXD) and a LOW-level indicates a local wake-up request (strong
pull-down at pin TXD; much stronger than the external pull-up resistor).
The wake-up request flag (signalled on pin RXD) as well as the wake-up source flag
(signalled on pin TXD) are reset immediately after the microcontroller sets pin SLP_N
HIGH.
7.9 TXD dominant time-out function
A TXD dominant time-out timer circuit prevents the bus line from being driven to a
permanent dominant state (blocking all network communication) if pin TXD is forced
permanently LOW by a hardware and/or software application failure. The timer is triggered
by a negative edge on pin TXD. If the duration of the LOW-level on pin TXD exceeds the
internal timer value (tto(dom)TXD), the transmitter is disabled, driving the bus line into a
recessive state. The timer is reset by a positive edge on pin TXD.
7.10 Fail-safe features
Pin TXD provides a pull-down to GND in order to force a predefined level on input pin TXD
in case the pin TXD is unsupplied.
Pin SLP_N provides a pull-down to GND in order to force the transceiver into sleep mode
in case the pin SLP_N is unsupplied.
Pin RXD is set floating in case of lost power supply on pin VBAT
.
The current of the transmitter output stage is limited in order to protect the transmitter
against short circuit to pins VBAT or GND.
A loss of power (pins VBAT and GND) has no impact on the bus line and the
microcontroller. There are no reverse currents from the bus. The LIN transceiver can be
disconnected from the power supply without influencing the LIN bus.
The output driver at pin LIN is protected against overtemperature conditions. If the
junction temperature exceeds the shutdown junction temperature Tj(sd), the thermal
protection circuit disables the output driver. The driver is enabled again on TXD = 0, after
the junction temperature dropped below Tj(sd) and a recessive level is present at pin TXD.
If VBAT drops below Vth(VBATL)L, a protection circuit disables the output driver. The driver is
enabled again on TXD = 0, after VBAT > Vth(VBATL)H and a recessive level is present at pin
TXD.
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
8 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
LIN recessive
V
BAT
0.6V
BAT
V
0.4V
t
dom(LIN)
LIN
BAT
LIN dominant
ground
sleep mode
standby mode
001aae071
Fig 5. Remote wake-up behavior
8. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced
to pin GND; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
VBAT
supply voltage on pin VBAT
with respect to
GND
−0.3
+40
V
VTXD
VRXD
VSLP_N
VLIN
voltage on pin TXD
voltage on pin RXD
voltage on pin SLP_N
voltage on pin LIN
−0.3
−0.3
−0.3
−40
+7
V
V
V
V
+7
+7
with respect to
GND, VBAT and
VWAKE_N
+40
VWAKE_N
IWAKE_N
voltage on pin WAKE_N
current on pin WAKE_N
−0.3
−15
+40
-
V
only relevant if
mA
VWAKE_N < VGND −
0.3 V; current will
flow into pin GND
VINH
voltage on pin INH
−0.3
VBAT
0.3
+
V
IO(INH)
Tvj
output current on pin INH
virtual junction temperature
storage temperature
−50
−40
−55
+15
mA
°C
[1]
+150
+150
Tstg
°C
Vesd
electrostatic discharge
voltage
[2]
[3]
[3]
[4]
according to
IEC 61000-4-2
-
-
kV
kV
kV
V
human body model
on pins WAKE_N,
LIN, VBAT and INH
−8
−2
−200
+8
+2
+200
on pins RXD,
SLP_N and TXD
machine model
all pins
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
9 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
[1] Junction temperature in accordance with IEC 60747-1. An alternative definition is: Tvj = Tamb + P × Rth(vj-a)
,
where Rth(vj-a) is a fixed value. The rating for Tvj limits the allowable combinations of power dissipation (P)
and ambient temperature (Tamb).
[2] Equivalent to discharging a 150 pF capacitor through a 330 Ω resistor. ESD performance of ≥ ±6 kV for pins
LIN, VBAT and WAKE_N is verified by an external test house.
[3] Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.
[4] Equivalent to discharging a 200 pF capacitor through a 10 Ω resistor and a 0.75 µH coil.
9. Thermal characteristics
Table 7.
Thermal characteristics
According to IEC 60747-1.
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction in free air
to ambient
<tbd>
K/W
Rth(j-s)
thermal resistance from junction in free air
to substrate
<tbd>
K/W
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
10 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
10. Static characteristics
Table 8.
Static characteristics
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]
Symbol
Supply
IBAT
Parameter
Conditions
Min
Typ
Max
Unit
supply current on pin
VBAT
sleep mode
(VLIN = VBAT
4
7
10
µA
;
V
V
V
WAKE_N = VBAT;
TXD = 0 V;
SLP_N = 0 V)
standby mode; bus
recessive (VINH = VBAT
150
300
400
1
450
800
800
2
1000
1600
2000
6
µA
µA
µA
mA
;
V
V
V
V
LIN = VBAT;
WAKE_N = VBAT
TXD = 0 V;
SLP_N = 0 V)
;
standby mode; bus
dominant (VBAT = 12 V;
V
V
V
V
INH = 12 V; VLIN = 0 V;
WAKE_N = 12 V;
TXD = 0 V;
SLP_N = 0 V)
normal mode; bus
recessive (VINH = VBAT
;
V
V
V
V
LIN = VBAT;
WAKE_N = VBAT
TXD = 5 V;
SLP_N = 5 V)
;
normal mode; bus
dominant (VBAT = 12 V;
V
V
V
V
INH = 12 V;
WAKE_N = 12 V;
TXD = 0 V;
SLP_N = 5 V)
Power-on reset
Vth(POR)L
LOW-level power-on
reset threshold voltage
power-on reset
1.6
3.1
3.4
0.3
4.4
4.7
0.3
3.9
4.3
1
V
V
V
V
V
V
Vth(POR)H
Vhys(POR)
Vth(VBATL)L
Vth(VBATL)H
Vhys(VBATL)
HIGH-level power-on
reset threshold voltage
2.3
power-on reset
hysteresis voltage
0.05
3.9
LOW-level VBAT LOW
threshold voltage
4.7
4.9
0.6
HIGH-level VBAT LOW
threshold voltage
4.3
VBAT LOW hysteresis
voltage
0.15
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
11 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
Table 8.
Static characteristics …continued
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]
Symbol
Pin TXD
VIH
Parameter
Conditions
Min
Typ
Max
Unit
HIGH-level input voltage
LOW-level input voltage
hysteresis voltage
2
-
7
V
VIL
−0.3
50
-
+0.8
350
650
V
Vhys
150
350
mV
kΩ
RPD(TXD)
pull-down resistance on VTXD = 5 V
pin TXD
150
IIL
LOW-level input current VTXD = 0 V
−5
-
-
+5
-
µA
IOL
LOW-level output current local wake-up request;
1.5
mA
standby mode;
VWAKE_N = 0 V;
VLIN = VBAT
;
VTXD = 0.4 V
Pin SLP_N
VIH
HIGH-level input voltage
LOW-level input voltage
hysteresis voltage
2
-
7
V
VIL
−0.3
0.15
150
-
+0.8
0.5
650
V
Vhys
-
V
RPD(SLP_N)
pull-down resistance on VSLP_N = 5 V
pin SLP_N
350
kΩ
IIL
LOW-level input current VSLP_N = 0 V
−5
0
-
+5
-
µA
Pin RXD (open-drain)
IOL LOW-level output current normal mode;
1.5
mA
VLIN = 0 V;
VRXD = 0.4 V
ILH
HIGH-level leakage
current
normal mode;
LIN = VBAT; VRXD = 5 V
−5
0
+5
µA
V
Pin WAKE_N
VIH
HIGH-level input voltage
LOW-level input voltage
V
BAT − 1
-
VBAT + 0.3
V
VIL
<tbd>
−30
-
V
BAT − 3.3
V
Ipu(L)
LOW-level pull-up
current
VWAKE_N = 0 V
−12
−1
µA
ILH
HIGH-level leakage
current
VWAKE_N = 27 V;
−5
0
+5
µA
VBAT = 27 V
Pin INH
Rsw(VBAT-INH)
switch-on resistance
between pins VBAT and
INH
standby; normal mode;
power-on mode;
-
20
50
+5
Ω
IINH = −15 mA;
VBAT = 12 V
ILH
HIGH-level leakage
current
sleep mode;
−5
0
µA
V
V
INH = 27 V;
BAT = 27 V
Pin LIN
IBUS_LIM
current limitation for
driver dominant state
VBAT = 18 V;
40
50
-
100
250
mA
VLIN = 18 V; VTXD = 0 V
Rpu
pull-up resistance
160
kΩ
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
12 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
Table 8.
Static characteristics …continued
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ILH
HIGH-level leakage
current
VLIN = 27 V;
-
-
1
µA
VBAT = 5.5 V
∆VLIN
voltage drop on pin LIN forward, across diode
and Rslave; VTXD = 5 V;
VBAT − 1.2
-
VBAT + 0.4
V
ILIN = −10 µA; standby
mode, normal mode
and power-on mode
IL(log)
loss of ground leakage
current
VBAT = 27 V; VLIN = 0 V
−750
-
-
-
-
+10
µA
µA
V
IL(lob)
loss of battery leakage
current
VBAT = 0 V; VLIN = 27 V
-
1
Vth(dom)RX
Vth(rec)RX
Vth(RX)AV
Vth(hys)RX
Rslave
receiver dominant
threshold voltage
-
0.4VBAT
-
receiver recessive
threshold voltage
0.6VBAT
V
average receiver
threshold voltage
Vth(RX)AV = (Vth(rec)RX
th(dom)RX) / 2
+
0.475VBAT
0.5VBAT 0.525VBAT
V
V
receiver hysteresis
threshold voltage
Vth(hys)RX = Vth(rec)RX
Vth(dom)RX
−
-
-
0.175VBAT
47
V
slave resistance
connected between
20
30
kΩ
pins LIN and VBAT
;
VLIN = 0 V; VBAT = 12 V
Thermal shutdown
Tj(sd) shutdown junction
temperature
<tbd>
170
<tbd>
°C
[1] All parameters are guaranteed over the virtual junction temperature range by design. Products are 100 % tested at 125 °C ambient
temperature on wafer level (pre-testing). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pre-testing
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.
11. Dynamic characteristics
Table 9.
Dynamic characteristics
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; see Figure 6; unless otherwise specified.[1]
Symbol
Duty cycles
δ1
Parameter
Conditions
Min
Typ
Max
Unit
[2][3][4]
[2][4][5]
duty cycle 1
Vth(rec)(max) = 0.744 ×
0.396
-
-
VBAT; Vth(dom)(max)
=
=
0.581 × VBAT; tbit
50 µs; VBAT = 7 V
to 18 V
δ2
duty cycle 2
Vth(rec)(min) = 0.422 ×
BAT; Vth(dom)(min)
0.284 × VBAT
-
-
0.581
V
=
;
tbit = 50 µs;
VBAT = 7.6 V to 18 V
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
13 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
Table 9.
Dynamic characteristics …continued
VBAT = 5.5 V to 27 V; Tvj = −40 °C to +150 °C; RL(LIN-VBAT) = 500 Ω; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; see Figure 6; unless otherwise specified.[1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[3][4]
δ3
duty cycle 3
Vth(rec)(max) = 0.778 ×
0.417
-
-
V
BAT; Vth(dom)(max)
0.616 × VBAT
bit = 96 µs; VBAT = 7 V
=
;
t
to 18 V
[4][5]
δ4
duty cycle 4
Vth(rec)(min) = 0.389 ×
-
-
0.590
VBAT; Vth(dom)(min)
=
0.251 × VBAT
;
tbit = 96 µs;
VBAT = 7.6 V to 18 V
Timing characteristics
[4]
[4]
[4]
tf
fall time
-
-
-
-
22.5
22.5
+4
µs
µs
µs
tr
rise time
-
∆t(r-f)
difference between rise
and fall time
−4
[2]
tPD(TX)
transmitter propagation
delay
-
-
4
µs
µs
µs
µs
µs
µs
µs
tPD(TX)sym
tPD(RX)
tPD(RX)sym
twake(dom)LIN
transmitter propagation
delay symmetry
−2
-
-
+2
6
[6]
[6]
receiver propagation
delay
-
receiver propagation
delay symmetry
−2
30
7
-
+2
150
50
10
dominant wake-up time sleep mode
on pin LIN
80
30
5
twake(dom)WAKE_N dominant wake-up time sleep mode
on pin WAKE_N
tgotonorm
go to normal time
time period for mode
change from sleep,
power-on or standby
mode into normal
mode
2
tinit(norm)
tgotosleep
normal mode
initialization time
<tbd>
2
<tbd>
5
<tbd>
10
µs
µs
go to sleep time
time period for mode
change from normal
slope mode into sleep
mode
tto(dom)TXD
TXD dominant time-out VTXD = 0 V
time
27
55
70
ms
[1] All parameters are guaranteed over the virtual junction temperature range by design. Products are 100 % tested at 125 °C ambient
temperature on wafer level (pre-testing). Cased products are 100 % tested at 25 °C ambient temperature (final testing). Both pre-testing
and final testing use correlated test conditions to cover the specified temperature and power supply voltage range.
[2] Not applicable for the /10 version of the TJA1021.
tbus(rec)(min)
[3] δ1, δ3 =
-------------------------------
2 × tbit
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
14 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
[4] Bus load conditions are: CL = 1 nF and RL = 1 kΩ; CL = 6.8 nF and RL = 660 Ω; CL = 10 nF and RL = 500 Ω.
tbus(rec)(max)
[5] δ2, δ4 =
--------------------------------
2 × tbit
[6] Load condition pin RXD: CRXD = 20 pF and RRXD = 2.4 kΩ.
t
t
t
bit
bit
bit
V
TXD
t
t
bus(rec)(min)
bus(dom)(max)
V
BAT
V
V
th(rec)(max)
thresholds of
receiving node 1
th(dom)(max)
LIN BUS
signal
V
V
th(rec)(min)
thresholds of
receiving node 2
th(dom)(min)
t
t
bus(rec)(max)
bus(dom)(min)
V
V
RXD
RXD
receiving
node 1
t
t
p(rx1)r
p(rx1)f
receiving
node 2
t
t
p(rx2)f
p(rx2)r
001aae072
Fig 6. Timing diagram LIN transceiver
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
15 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
12. Application information
ECU
LIN BUS
LINE
BATTERY
+5 V/
+3.3 V
only for
master node
V
7
INH
BAT
1 kΩ
RXD
WAKE_N
V
8
DD
RX0
TX0
Px.x
1
4
2
3
TXD
MICRO-
CONTROLLER
TJA1021
SLP_N
LIN
6
GND
5
(1)
001aae070
More information is available in a separate application note.
(1) Master: C = 1 nF; slave: C = 220 pF.
Fig 7. Typical application of the TJA1021
13. Test information
V
BAT
WAKE_N
SLP_N
INH
LIN
100 nF
R
L
TJA1021
TXD
RXD
GND
R
RXD
C
RXD
C
L
001aae069
Fig 8. Test circuit for AC characteristics
Immunity against automotive transients (malfunction and damage) in accordance with LIN
EMC Test Specification / Version 1.0; August 1, 2004.
13.1 Quality information
This product has been qualified to the appropriate Automotive Electronics Council (AEC)
standard Q100 or Q101 and is suitable for use in automotive critical applications.
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
16 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
14. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
Fig 9. Package outline SOT96-1 (SO8)
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
17 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
15. Handling information
Inputs and outputs are protected against electrostatic discharge in normal handling.
However, to be completely safe you must take normal precautions appropriate to handling
integrated circuits.
16. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus PbSn soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
© NXP B.V. 2006. All rights reserved.
TJA1021_1
Objective data sheet
Rev. 01 — 16 October 2006
18 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 10) than a PbSn process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 10 and 11
Table 10. SnPb eutectic process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
235
≥ 350
220
< 2.5
≥ 2.5
220
220
Table 11. Lead-free process (from J-STD-020C)
Package thickness (mm) Package reflow temperature (°C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 10.
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
19 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 10. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Revision history
Table 12. Revision history
Document ID
Release date
20061016
Data sheet status
Change notice
Supersedes
TJA1021_1
Objective data sheet
-
-
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
20 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Limiting values — Stress above one or more limiting values (as defined in
18.2 Definitions
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
18.3 Disclaimers
Bare die — All die are tested on compliance with all related technical
specifications as stated in this data sheet up to the point of wafer sawing for a
period of ninety (90) days from the date of delivery by NXP Semiconductors.
If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There are no post-packing tests performed on
individual die or wafers.
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
NXP Semiconductors has no control of third party procedures in the sawing,
handling, packing or assembly of the die. Accordingly, NXP Semiconductors
assumes no liability for device functionality or performance of the die or
systems after third party sawing, handling, packing or assembly of the die. It
is the responsibility of the customer to test and qualify their application in
which the die is used.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
All die sales are conditioned upon and subject to the customer entering into a
written die sale agreement with NXP Semiconductors through its legal
department.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
19. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
TJA1021_1
© NXP B.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 16 October 2006
21 of 22
TJA1021
NXP Semiconductors
LIN 2.0/SAE J2602 transceiver
20. Contents
1
General description . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Low power management . . . . . . . . . . . . . . . . . 1
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2.1
2.2
2.3
3
4
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7
Functional description . . . . . . . . . . . . . . . . . . . 4
Operating modes . . . . . . . . . . . . . . . . . . . . . . . 5
Sleep mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Standby mode. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Normal mode . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Wake-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Remote and local wake-up . . . . . . . . . . . . . . . . 7
Wake-up via mode transition . . . . . . . . . . . . . . 7
Wake-up source recognition . . . . . . . . . . . . . . . 8
TXD dominant time-out function . . . . . . . . . . . . 8
Fail-safe features . . . . . . . . . . . . . . . . . . . . . . . 8
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal characteristics. . . . . . . . . . . . . . . . . . 10
Static characteristics. . . . . . . . . . . . . . . . . . . . 11
Dynamic characteristics . . . . . . . . . . . . . . . . . 13
Application information. . . . . . . . . . . . . . . . . . 16
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
Quality information . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Handling information. . . . . . . . . . . . . . . . . . . . 18
9
10
11
12
13
13.1
14
15
16
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Introduction to soldering . . . . . . . . . . . . . . . . . 18
Wave and reflow soldering . . . . . . . . . . . . . . . 18
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 18
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 19
16.1
16.2
16.3
16.4
17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 20
18
Legal information. . . . . . . . . . . . . . . . . . . . . . . 21
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
18.1
18.2
18.3
18.4
19
20
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 October 2006
Document identifier: TJA1021_1
相关型号：
TJA1027T/20
IC DATACOM, INTERFACE CIRCUIT, PDSO8, 3.90 MM, GREEN, PLASTIC, MS-012, SOT96-1, SOP-8, Network Interface
NXP
TJA1027TK/20
IC DATACOM, INTERFACE CIRCUIT, PDSO8, 3 X 3 MM, 0.85 MM HEIGHT, GREEN, PLASTIC, MO-229, SOT782-1, HVSON-8, Network Interface
NXP
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