TJA1080_技术文档

TJA1080

FlexRay transceiver

Rev. 01 — 20 July 2006

Preliminary data sheet

1. General description

The TJA1080 is a FlexRay transceiver, which is compatible with the FlexRay electrical

physical layer speciﬁcation V2.1 Rev. A (see Ref. 1). It is primarily intended for

communication systems from 1 Mbit/s to 10 Mbit/s, and provides an advanced interface

between the protocol controller and the physical bus in a FlexRay network.

The TJA1080 can be conﬁgured to be used as an active star transceiver or as a node

transceiver.

The TJA1080 provides differential transmit capability to the network and differential

receive capability to the FlexRay controller. It offers excellent EMC performance as well as

high ESD protection.

The TJA1080 actively monitors the system performance using dedicated error and status

information (readable by any microcontroller), as well as internal voltage and temperature

monitoring.

The TJA1080 supports the mode control as used in Philips TJA1054 (see Ref. 2) and

TJA1041 (see Ref. 3) CAN transceivers.

2. Features

2.1 Optimized for time triggered communication systems

I Data transfer up to 10 Mbit/s

I Usable for 14 V and 42 V powered systems

I Very low ElectroMagnetic Emission (EME) to support unshielded cable

I Differential receiver with high common-mode range for ElectroMagnetic Immunity

(EMI)

I Transceiver can be used for small linear passive bus topologies as well as active star

topologies

I Auto I/O level adaptation to host controller supply voltage V_IO

I Bus guardian interface included

I Automotive product qualiﬁcation in accordance with AEC-Q100

TJA1080

Philips Semiconductors

FlexRay transceiver

2.2 Low power management

I Low power management including two inhibit switches

I Very low current in Sleep and Standby mode

I Wake-up via wake-up symbol on the bus lines (remote), negative edge on pin WAKE

(local), and a positive edge on pin STBN if V_IOis present

I Wake-up source recognition

I Automatic power-down (in star Sleep mode) in star conﬁguration

2.3 Diagnosis (detection and signalling)

I Overtemperature detection

I Short-circuit on bus lines

I V_BATpower-on ﬂag (ﬁrst battery connection and cold start)

I Pin TXEN and pin BGE clamping

I Undervoltage detection on pins V_BAT, V_CCand V_IO

I Wake source indication

2.4 Protections

I Bus pins protected against 8 kV HBM ESD pulses

I Bus pins protected against transients in automotive environment (ISO 7637 class C

compliant)

I Bus pins short-circuit proof to battery voltage (14 V and 42 V) and ground

I Fail-safe mode in case of an undervoltage on pins V_BAT, V_CCor V_IO

I Passive behavior of bus lines in the event that transceiver is not powered up

3. Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

Min

−0.3

6.5

Typ

Max

+60

60

Unit

V

V_BAT

V_CC

V_BUF

V_IO

supply voltage on pin V_BAT

no time limit

-

operating range

no time limit

V

supply voltage

−0.3

4.75

−0.3

4.75

−0.3

2.2

+5.5

5.25

+5.5

5.25

+5.5

5.25

+5.5

+60

50

V

operating range

no time limit

V

supply voltage on pin V_BUF

supply voltage on pin V_IO

V

operating range

no time limit

V

operating range

V

V_TRXD0

V_TRXD1

V_BP

voltage on pin TRXD0

voltage on pin TRXD1

voltage on pin BP

−0.3

−60

-

V

-

V

V_BM

voltage on pin BM

-

V

I_BAT

supply current on pin V_BAT

low power modes in

node conﬁguration

35

µA

normal power modes

-

0.075

1

mA

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

2 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 1.

Quick reference data …continued

Symbol Parameter

Conditions

Min

−1

-

Typ

0

Max

+5

Unit

µA

I_CC

supply current

low power modes

Normal mode; V_BGE

0 V; V_TXEN= V_IO;

=

10

15

mA

Receive only mode; star

Idle mode

[1]

Normal mode; V_BGE

V_IO; V_TXEN= 0 V; V_BUF

open

=

-

28.5

10

35

15

mA

Normal mode;

V_BGE= V_IO; V_TXEN= 0 V;

R

_bus= ∞ Ω

star Transmit mode

star Receive mode

low power modes

-

50

38

+1

30

62

mA

µA

-

42

I_IO

supply current on pin V_IO

−1

-

+5

Normal and Receive

only mode; V_TXD= V_IO

1000

µA

V_OH(dif)

V_OL(dif)

V_IH(dif)

differential HIGH-level output voltage on pins BP and BM;

600

800

1200

−600

300

mV

40 Ω < R_bus< 55 Ω;

V_CC= V_BUF= 5 V

differential LOW-level output voltage on pins BP and BM;

−1200

150

−800

225

40 Ω < R_bus< 55 Ω;

V_CC= V_BUF= 5 V

differential HIGH-level input voltage

differential LOW-level input voltage

virtual junction temperature

on pins BP and BM;

normal power modes;

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

V_IL(dif)

on pins BP and BM;

normal power modes;

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

−300

−225

−150

mV

[2]

T_vj

−40

-

+150

°C

[1] Current ﬂows from V_CCto V_BUF. This means that the maximum sum current I_CC+ I_BUFis 35 mA.

[2] In accordance with IEC 60747-1. An alternative deﬁnition of virtual junction temperature T_vjis: T_vj= T_amb+ TD x R_th(j-a), where R_th(j-a)is

a ﬁxed value to be used for the calculation of T_vj. The rating for T_vjlimits the allowable combinations of power dissipation (P) and

ambient temperature (T_amb).

4. Ordering information

Table 2.

Ordering information

Type number

Package

Name

Description

Version

TJA1080TS/N

SSOP20

plastic shrink small outline package; 20 leads; body with 5.3 mm

SOT339-1

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

3 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

5. Block diagram

V

IO

4

CC

BUF

20

BAT

19

14

1

INH2

2

INH1

TJA1080

11

10

TRXD0

TRXD1

18

BP

SIGNAL

ROUTER

TRANS-

MITTER

17

BM

V

IO

5

6

8

9

3

TXD

TXEN

BGE

STBN

EN

INPUT

VOLTAGE

ADAPTATION

BUS

FAILURE

DETECTION

RXDINT

7

RXD

ERRN

RXEN

OUTPUT

VOLTAGE

ADAPTATION

13

12

NORMAL

RXDINT

RECEIVER

STATE

MACHINE

V

BAT

OVER-

TEMPERATURE

DETECTION

15

WAKE-UP

DETECTION

WAKE

OSCILLATOR

LOW-

UNDERVOLTAGE

DETECTION

POWER

RECEIVER

16

001aae436

GND

Fig 1. Block diagram

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

4 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

6. Pinning information

6.1 Pinning

1

2

20

19

18

17

16

15

14

13

12

11

INH2

INH1

EN

V

BUF

CC

3

BP

4

V

BM

IO

5

TXD

TXEN

RXD

GND

WAKE

TJA1080TS

6

7

V

BAT

8

BGE

ERRN

RXEN

TRXD0

9

STBN

TRXD1

10

001aae437

Fig 2. Pin conﬁguration

6.2 Pin description

Table 3.

Pin description

Symbol Pin

Type

Description

INH2

INH1

EN

1

2

3

4

5

6

O

I

inhibit 2 output for switching external voltage regulator

inhibit 1 output for switching external voltage regulator

enable input; when HIGH enabled; internal pull-down

supply voltage for V_IOvoltage level adaptation

transmit data input; internal pull-down

V_IO

P

I

TXD

TXEN

I

transmitter enable input; when HIGH transmitter disabled; internal

pull-up

RXD

BGE

7

8

O

I

receive data output

bus guardian enable input; when LOW transmitter disabled; internal

pull-down

STBN

9

I

standby input; when LOW low power mode; internal pull-down

data bus line 1 for inner star connection

TRXD1 10

TRXD0 11

I/O

O

P

data bus line 0 for inner star connection

RXEN

ERRN

V_BAT

12

13

14

15

receive data enable output; when LOW bus activity detected

error diagnoses output; when LOW error detected

battery supply voltage

WAKE

I

local wake-up input; internal pull-up or pull-down (depends on

voltage at pin WAKE)

GND

BM

16

17

18

19

20

P

ground

I/O

P

bus line minus

bus line plus

BP

V_CC

V_BUF

supply voltage (+5 V)

buffer supply voltage

P

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

5 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7. Functional description

The block diagram of the total transceiver is illustrated in Figure 1.

7.1 Operating conﬁgurations

7.1.1 Node conﬁguration

In node conﬁguration the transceiver operates as a stand-alone transceiver.

The transceiver can be conﬁgured as node by connecting pins TRXD0 and TRXD1 to

ground during a power-on situation (PWON ﬂag is set). The conﬁguration will be latched

when the PWON ﬂag is reset.

The following operating modes are selectable:

• Normal: normal power mode

• Receive: normal power mode

• Standby: low power mode

• Go-to-sleep: low power mode

• Sleep: low power mode

7.1.2 Star conﬁguration

In star conﬁguration the transceiver operates as a branch of a FlexRay active star.

The transceiver can be conﬁgured as star by connecting pin TRXD0 or TRXD1 to V_BUF

during a PWON situation (PWON ﬂag is set). The conﬁguration will be latched when the

PWON ﬂag is reset.

It is possible to redirect data from one branch to other branches via the inner bus. It is also

possible to send data to all branches via pin TXD, if pins TXEN and BGE have the correct

polarity.

The following operating modes are available:

• Star idle: normal power mode

• Star transmit: normal power mode

• Star receive: normal power mode

• Star sleep: low power mode

• Star standby: low power mode

• Star locked: normal power mode

In the star conﬁguration all modes are autonomously controlled by the transceiver, except

in the case of a wake-up.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

6 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.1.3 Bus activity and idle detection

The following mechanisms for activity and idle detection are valid for node and star

conﬁgurations in normal power modes:

• If the absolute differential voltage on the bus lines is higher than V_{i(dif)det(act)}for

t_{det(act)(bus)}, then activity is detected on the bus lines and pin RXEN is switched to LOW

which results in pin RXD being released

• If, after bus activity detection, the differential voltage on the bus lines is higher than

V_IH(dif), pin RXD will go HIGH

• If, after bus activity detection, the differential voltage on the bus lines is lower than

V_IL(dif), pin RXD will go LOW

• If the absolute differential voltage on the bus lines is lower than V_{i(dif)det(act)}for

t_{det(idle)(bus)}, then idle is detected on the bus lines and pin RXEN is switched to HIGH.

This results in pin RXD being blocked (pin RXD is switched to HIGH or stays HIGH)

Additionally, in star conﬁguration, activity and idle can be detected:

• If pin TXEN is LOW for longer than t_{det(act)(TXEN)}, activity is detected on pin TXEN

• If pin TXEN is HIGH for longer than t_{det(idle)(TXEN)}, idle is detected on pin TXEN

• If pin TRXD0 or TRXD1 is LOW for longer than t_{det(act)(TRXD)}, activity is detected on

pins TRXD0 and TRXD1

• If pin TRXD0 or TRXD1 is HIGH for longer than t_{det(idle)(TRXD)}, idle is detected on pins

TRXD0 and TRXD1

7.2 Operating modes in node conﬁguration

The TJA1080 provides two control pins STBN and EN in order to select one of the modes

of operation in node conﬁguration. See Table 4 for a detailed description of the pin

signalling in node conﬁguration, and Figure 3 for the timing diagram.

All modes are directly controlled via pins EN and STBN unless an undervoltage situation

is present.

If V_IOand (V_BUFor V_BAT) are within their operating range, pin ERRN indicates the error

ﬂag.

Table 4.

Pin signalling in node conﬁguration

Mode

Normal

Receive only

HIGH

Go-to-sleep

Standby

LOW

Sleep

LOW

X

STBN

EN

HIGH

LOW

HIGH

LOW

HIGH

LOW

ERRN

LOW: error ﬂag set ^[3]

HIGH: error ﬂag set^{[3] [4]}

LOW: bus activity

HIGH: bus idle

LOW: bus DATA_0

LOW: wake ﬂag set ^[4]

HIGH: wake ﬂag reset ^[4]

LOW: wake ﬂag set ^[4]

HIGH: wake ﬂag reset ^[4]

LOW: wake ﬂag set ^[4]

HIGH: wake ﬂag reset ^[4]

RXEN

RXD

HIGH: bus DATA_1 or idle

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

7 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 4.

Pin signalling in node conﬁguration …continued

Mode

Normal

HIGH

Receive only

Go-to-sleep

HIGH

Standby

HIGH

ﬂoat ^[5]

Sleep

ﬂoat ^[4]

INH1

INH2

HIGH

ﬂoat ^[5]

Transmitter enabled

disabled ^[4]

[3] Pin ERRN provides a serial interface for retrieving diagnostic information.

[4] Valid if V_IOand V_BUFor V_BATare present.

[5] If wake ﬂag is not set.

TXD

BGE

TXEN

BP

BM

RXEN

RXD

001aae439

Fig 3. Timing diagram in normal mode node conﬁguration

The state diagram in node conﬁguration is illustrated in Figure 4.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

8 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

1

4

RECEIVE ONLY

NORMAL

STBN = 1

EN = 0

STBN = 1

EN = 1

3, 30

5

15, 25, 43, 44

8, 17, 40

6, 33

10, 20

2

14, 24, 41, 42

28, 29

31, 32

11, 21

7, 16, 39

12, 22, 36

(1)

STANDBY

GO-TO-SLEEP

STBN = 0

EN = 0

STBN = 0

EN = 1

19

23

9, 18

37, 38

13, 34, 35

26, 45, 46

27, 47, 48

SLEEP

STBN = 0

EN = X

001aae438

(1) At the ﬁrst battery connection the transceiver will enter the Standby mode.

Fig 4. State diagram in node conﬁguration

The state transitions are represented with numbers, which correspond with the numbers

in the last column of Table 5 to Table 8.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

9 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.2.1 Normal mode

In Normal mode the transceiver is able to transmit and receive data via the bus lines BP

and BM. The output of the normal receiver is directly connected to pin RXD.

The transmitter behavior in normal mode of operation, with no time-out present on pins

TXEN and BGE and the temperature ﬂag not set is given in Table 9.

In this mode pins INH1 and INH2 are set HIGH.

Table 9.

Transmitter function table

BGE

L

TXEN TXD

Transmitter

X

H

L

X

H

transmitter is disabled

X

H

transmitter is enabled; the bus lines are actively driven; BP is driven

HIGH and BM is driven LOW

H

L

transmitter is enabled; the bus lines are actively driven; BP is driven

LOW and BM is driven HIGH

7.2.2 Receive only mode

In receive only mode the transceiver can only receive data. The transmitter is disabled,

regardless of the voltages on pins BGE and TXEN.

In this mode pins INH1 and INH2 are set HIGH.

7.2.3 Standby mode

In Standby mode the transceiver enters a low power mode which means very low current

consumption. In the Standby mode the device is not able to transmit or receive data and

the low power receiver is activated to monitor bus activity.

Standby mode can be entered if the correct polarity is applied to pins EN and STBN (see

Figure 4 and Table 5) or an undervoltage is present on pin V_CC; see Figure 4.

If an undervoltage is present on pin V_CC, direct switching to a normal power mode is not

possible. By applying a positive edge on pin STBN and thus setting the wake ﬂag, all

undervoltage ﬂags are reset and therefore switching to a normal power mode is possible.

The transceiver will then enter the mode indicated on pins EN and STBN

In this mode the transceiver can be switched to any other mode if no undervoltage is

present on pins V_IOand V_BAT

.

Pin INH1 is set to HIGH. If the wake ﬂag is set, pin INH2 is set to HIGH and pins RXEN

and RXD are set to LOW, otherwise pin INH2 is ﬂoating and pins RXEN and RXD are set

to HIGH; see Section 7.5.

7.2.4 Go-to-sleep mode

In this mode the transceiver behaves as in Standby mode. If this mode is selected for a

longer time than the go-to-sleep command hold time (minimum hold time) and the wake

ﬂag has been previously cleared, the transceiver will enter Sleep mode, regardless of the

voltage on pin EN.

If the voltage regulator that supplies the host is switched via pin INH1, pin EN becomes

LOW if pin INH1 is switched off.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

14 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.2.5 Sleep mode

In Sleep mode the transceiver has entered a low power mode. The only difference with

Standby mode is that pin INH1 is also set ﬂoating. Sleep mode is directly entered if the

UV_VIOor UV_VBATﬂag is set.

In this mode the transceiver can be switched to any other mode if no undervoltage is

present on pins V_IO, V_CCand V_BAT. In case of an undervoltage on pin V_CCor V_BATwhile

V_IOis present, the wake ﬂag is set by a positive edge on pin STBN.

The undervoltage ﬂags will be reset by setting the wake ﬂag, and therefore the transceiver

will enter the mode indicated on pins EN and STBN if V_IOis present.

A detailed description of the wake-up mechanism is given in Section 7.5.

7.3 Operating modes in star conﬁguration

In star conﬁguration mode control via pins EN and STBN is not possible. The transceiver

autonomously controls the operating modes except in the case of wake-up.

The timing diagram of a transceiver conﬁgured in star conﬁguration is illustrated in

Figure 6. The state diagram in star conﬁguration is illustrated in Figure 5. A detailed

description of the pin signalling in star conﬁguration is given in Table 10.

If V_IOand (V_BUFor V_BAT) are within their operating range, pin ERRN will indicate the error

ﬂag.

Table 10. Pin signalling in star conﬁguration

Mode

TRXD0 / ERRN

RXEN

RXD

LOW

Transmitter INH1

INH2

TRXD1

LOW

HIGH

LOW

HIGH

Star Transmit output ^[1]error ﬂag error ﬂag bus

bus idle bus

bus

enabled

HIGH HIGH

input ^[2]

set ^[3]

reset ^[3]

activity

DATA_0 DATA_1

Star Receive output

disabled ^[1]

Star Idle

input

Star Locked input

Star Standby input

error ﬂag Error ﬂag wakeﬂag wakeﬂag wakeﬂag wakeﬂag

set ^[1][3]reset ^[1][3]set ^[1]reset ^[1]set ^[1]reset ^[1]

Star Sleep

input

ﬂoat ^[1]ﬂoat ^[1]

[1] Valid if V_IOand (V_BUFor V_BAT) are present.

[2] TRXD lines are switched as input if TRXD activity is the initiator for star Transmit mode.

[3] Pin ERRN provides a serial interface for retrieving diagnostic information.

[4] TRXD lines switched as output if TXEN activity is the initiator for star Transmit mode.

Pin BGE has to be connected to pin V_IOin order to enable the transmitter via pin TXEN. If

pin BGE is connected to ground, it is not possible to activate the transmitter via pin TXEN.

If pin TXEN is not used (no controller connected to the transceiver), it has to be connected

to pin V_IOin order to prevent TXEN activity detection.

In all modes pin RXD is connected to the output of the normal mode receiver and

therefore represents the data on the bus lines.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

15 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

STAR LOCKED

INH1 = HIGH

INH2 = HIGH

TXEN activity detected for

bus activity detected for

longer than t

to(tx-locked)

to(rx-locked)

idle detected on

the bus lines

and TXEN for longer

than t

to(locked-idle)

idle detected on

TRXD0, TRXD1,

TXEN and the

bus lines

idle detected on

TRXD0, TRXD1,

TXEN and the

bus lines

STAR TRANSMIT

STAR IDLE

STAR RECEIVE

INH1 = HIGH

INH2 = HIGH

INH1 = HIGH

INH2 = HIGH

INH1 = HIGH

INH2 = HIGH

TRXD0, TRXD1,

TXEN activity detected

bus activity

detected

wake

flag 1

wake flag 1 or

UV signal 0

VCC

time in star

locked longer

than t

no acivity on TRXD0,

TRXD1, TXEN and the

bus lines for longer

to(locked-sleep)

than t

to(idle-sleep)

STAR SLEEP

STAR STANDBY

INH1 = floating

INH2 = floating

INH1 = HIGH

INH2 = HIGH

from star idle, star

transmit or star receive if

wake flag set and under

voltage present on V

for longer than

CC

t > t

to(uv)(VCC)

from any mode if UV

power-on

VCC

001aae441

flag is set regardless PWON flag

V

> V

BAT BAT(PWON)

Fig 5. State diagram in star conﬁguration

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

16 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

star transmit

star idle

star receive

star idle

star transmit

star idle

TRXD0

TRXD1

TXEN

TXD

TRXDOUT

BP

BM

RXEN

RXD

001aae440

TRXDOUT is a virtual signal that indicates the state of the TRXD lines. TRXDOUT HIGH means TRXD lines switched as

output. TRXDOUT LOW means TRXD lines switched as input.

Fig 6. Timing diagram in star conﬁguration

7.3.1 Star Idle mode

This mode is entered if one of the following events occurs:

• From star Receive mode and star Transmit mode if idle is detected on the bus lines,

on pin TXEN and on pins TRXD0 and TRXD1.

• If the transceiver is in star Locked mode and idle is detected on the bus lines and pin

TXEN for longer than t_{to(locked-idle)}

.

• If the transceiver is in star Standby mode and the wake ﬂag is set or no undervoltage

is present.

• If the transceiver is in star Sleep mode and the wake ﬂag is set, the transceiver enters

star Idle mode in order to obtain a stable starting point (no glitches on the bus lines

etc).

• In star Idle mode the transceiver monitors pins TXEN, TRXD0 and TRXD1 and the

bus lines for activity. In this mode the transmitter is disabled.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

17 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.3.2 Star Transmit mode

This mode is entered if one of the following events occur:

• If the transceiver is in star Idle mode and activity is detected on pin TXEN.

• If the transceiver is in star Idle mode and activity is detected on pins TRXD0 and

TRXD1.

In star Transmit mode the transmitter is enabled and the transceiver can transmit data on

the bus lines. It transmits the data received on pins TXD or TRXD0 and TRXD1 on the bus

lines.

7.3.3 Star Receive mode

This mode is entered if the transceiver is in star Idle mode and activity has been detected

on the bus lines.

In star Receive mode the transceiver transmit data via the TRXD0 and TRXD1 lines to

other transceivers connected to the bus lines. The transmitter is always disabled.

7.3.4 Star Standby mode

This mode is entered if one of the following events occur:

• From star Idle, star Transmit or star Receive modes if the wake ﬂag is set and an

undervoltage on pin V_CCis present for longer than t_to(uv)(VCC)

.

• If the PWON ﬂag is set.

In star Standby mode the transceiver enters a low power mode. In this mode the current

consumption is as low as possible to prevent discharging the capacitor at pin V_BUF

.

If pins V_IOand V_BUFare within their temperature range, pins RXD and RXEN will indicate

the wake ﬂag.

7.3.5 Star Sleep mode

This mode is entered if one of the following events occur:

• From any mode if an undervoltage on pin V_CCis present for longer than t_det(uv)(VCC)

.

• If the transceiver is in star Idle mode and no activity is detected on the bus lines and

pins TXEN, TRXD0 and TRXD1 for longer than t_{to(idle-sleep)}

• If star Locked mode is active for longer than t_{to(locked-sleep)}

.

In star Sleep mode the transceiver will enter a low power mode. In this mode the current

consumption is as low as possible to prevent the car battery from discharging. The inhibit

switches are switched off.

In this mode the wake ﬂag wakes the transceiver. A detailed description of the wake-up

mechanism is given in Section 7.5.

If pins V_IOand V_BUFare within their temperature range, pins RXD and RXEN will indicate

the wake ﬂag.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

18 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.3.6 Star Locked mode

This mode is entered if one of the following events occur:

• If the transceiver is in star Transmit mode and activity on pin TXEN is detected for

longer than t_{to(tx-locked)}

• If the transceiver is in star Receive mode and activity is detected on the bus lines for

longer than t_{to(rx-locked)}

.

This mode is a fail-silent mode and in this mode the transmitter is disabled.

7.4 Start-up

7.4.1 Node conﬁguration

Node conﬁguration can be selected by applying a voltage lower than 0.3V_BUFto pins

TRXD0 and TRXD1 during power-on. Node conﬁguration is latched by resetting the

PWON ﬂag while the voltage on pins TRXD0 and TRXD1 is lower than 0.3V_BUF; see

Section 7.7.4 for (re)setting the PWON ﬂag.

7.4.2 Star conﬁguration

Star conﬁguration can be selected by applying a voltage higher than 0.7V_BUFto pins

TRXD0 or TRXD1 during power-on. Star conﬁguration is latched by resetting the PWON

ﬂag while one of the voltages on pins TRXD0 or TRXD1 is higher than 0.7V_BUF. See

Section 7.7.4 for (re)setting the PWON ﬂag. In this case the transceiver goes from node

Standby mode to star Idle mode.

7.5 Wake-up mechanism

7.5.1 Node conﬁguration

If a node conﬁgured transceiver is in Sleep mode (pins INH1 and INH2 are switched off), it

will enter Standby mode or go-to-sleep mode (depending on the level at pin EN). In both

modes pin INH1 is switched on, pin INH2 is switched on or off depending on whether the

wake ﬂag is set.

If no undervoltage is present on pins V_IOand V_BAT, the transceiver switches immediately

to the mode indicated on pins EN and STBN.

In Standby, go-to-sleep and Sleep mode pins RXD and RXEN are driven LOW if the wake

ﬂag is set.

7.5.2 Star conﬁguration

If a star conﬁgured transceiver is in Sleep mode (pins INH1 and INH2 are switched off) it

will enter star Idle mode (pins INH1 and INH2 are switched on) if the wake ﬂag is set. In

star Idle mode, the transceiver enters the appropriate mode directly, depending on which

event has set the wake ﬂag:

• If the wake-up source was pin WAKE or a positive edge on pin STBN, the transceiver

will remain in star Idle mode.

• If the wake-up source was activity detected on pins TRXD0 and TRXD1, the

transceiver will change from star Idle mode to star Transmit mode.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

19 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

• If the wake-up source was a wake-up symbol, the transceiver will change from star

Idle mode to star Receive mode.

7.5.3 Bus wake-up

Bus wake-up is detected if two consecutive DATA_0 of at least t_{det(wake)DATA_0}separated by

an idle or DATA_1 of at least t_{det(wake)idle}, followed by an idle or DATA_1 of at least

t_{det(wake)idle}are present on the bus lines within t_det(wake)tot

.

t

det(wake)tot

0 V

V

dif

−425 mV

t

det(wake)Data_0

det(wake)idle

det(wake)Data_0

det(wake)idle

001aae442

Fig 7. Bus wake-up timing

7.5.4 Local wake-up via pin WAKE

If the voltage on pin WAKE is lower than V_{th(det)(WAKE)}for longer than t_wake(WAKE)(falling

edge on pin WAKE) a local wake-up event on pin WAKE is detected. At the same time, the

biasing of this pin is switched to pull-down.

If the voltage on pin WAKE is higher than V_{th(det)(WAKE)}for longer than t_wake, the biasing of

this pin is switched to pull-up, and no local wake-up will be detected.

pull-up

pull-down

t

wake(WAKE)

V

BAT

0 V

WAKE

RXD and

RXEN

V

BAT

0 V

INH1 and

INH2

001aae443

Sleep mode: V_IOand (V_BATor V_CC) still provided.

Fig 8. Local wake-up timing via pin WAKE

7.6 Fail silent behavior

In order to be fail silent, undervoltage detection is implemented. An undervoltage will be

detected on pins V_CC, V_IOand V_BAT

.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

20 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

7.6.1 V_BATundervoltage

• Node conﬁguration: If the UV_VBATﬂag is set the transceiver will enter Sleep mode

(pins INH1 and INH2 are switched off) regardless of the voltage present on pins EN

and STBN. If the undervoltage recovers the wake ﬂag will be set and the transceiver

will enter the mode determined by the voltages on pins EN and STBN.

• Star conﬁguration: The TJA1080 in star conﬁguration is able to transmit and receive

data as long as V_CCand V_IOare within their operating range, regardless of the

undervoltage on V_BAT

.

7.6.2 V_CCundervoltage

• Node conﬁguration: If the UV_VCCﬂag is set the transceiver will enter the Standby

mode (pin INH2 is switched off) regardless of the voltage present on pins EN and

STBN. If the undervoltage recovers or the wake ﬂag is set mode switching via pins EN

and STBN is possible.

• Star conﬁguration: If the UV_VCCﬂag is set the transceiver will enter the star Sleep

mode.

7.6.3 V_IOundervoltage

• Node conﬁguration: If the voltage on pin V_IOis lower than V_uvd(VIO)(even if the UV_VIO

ﬂag is reset) pins EN, STBN, TXD and BGE are set LOW (internally) and pin TXEN is

set HIGH (internally). If the UV_VIOﬂag is set the transceiver will enter Sleep mode

(pins INH1 and INH2 are switched off).

• Star conﬁguration: If an undervoltage is present on pin V_IO(even if the UV_VIOﬂag is

reset) pins EN, STBN, TXD and BGE are set LOW (internally) and pin TXEN is set

HIGH (internally). If the V_IOundervoltage ﬂag is set, pin INH1 is switched off. If an

undervoltage is present on pin V_IOand V_CCis within the operating range, the TJA1080

will forward the received data to all other branches.

7.7 Flags

7.7.1 Local wake-up source ﬂag

The local wake-up source ﬂag can only be set in a low power mode. When a wake-up

event on pin WAKE is detected (see Section 7.5.4) it sets the local wake-up source ﬂag.

The local wake-up source ﬂag is reset by entering a low power mode.

7.7.2 Remote wake-up source ﬂag

The remote wake-up source ﬂag can only be set in a low power mode. When a bus

wake-up event is detected on the bus lines (see Section 7.5.3) it sets the remote wake-up

source ﬂag. The remote wake-up source ﬂag is reset by entering a low power mode.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

21 of 44

TJA1080

Philips Semiconductors

7.7.3 Wake ﬂag

FlexRay transceiver

The wake ﬂag is set if one of the following events occurs:

• The local or remote wake-up source ﬂag is set (edge sensitive)

• A positive edge is detected on pin STBN if V_IOis present

• Recovery of the UV_VBATﬂag (only in node conﬁguration)

• By recognizing activity on pins TRXD0 and TRXD1 (only in star conﬁguration)

In node conﬁguration the wake ﬂag is reset by entering Normal mode, a low power mode

or setting one of the undervoltage ﬂags. In star conﬁguration the wake ﬂag is reset by

entering a low power mode or by recovery of the UV_VCCsignal (without t_rec(uv)(VCC)).

7.7.4 Power-on ﬂag

The PWON ﬂag is set if the internal supply voltage for the digital part becomes higher than

the lowest value it needs to operate. In node conﬁguration, entering Normal mode resets

the PWON ﬂag. In star conﬁguration the PWON ﬂag is reset when the UV_VCCsignal goes

LOW (no undervoltage detected).

7.7.5 Node or star conﬁguration ﬂag

Conﬁguration ﬂag set means node conﬁguration.

7.7.6 Temperature medium ﬂag

The temperature medium ﬂag is set if the junction temperature exceeds T_{j(warn)(medium)}in a

normal power mode. The temperature medium ﬂag is reset when the junction temperature

becomes lower than T_{j(warn)(medium)}in a normal power mode. No action will be taken if this

ﬂag is set.

7.7.7 Temperature high ﬂag

The temperature high ﬂag is set if the junction temperature exceeds T_j(dis)(high)in a normal

power mode.

In node conﬁguration the temperature high ﬂag is reset if a negative edge is applied to pin

TXEN while the junction temperature is lower than T_j(dis)(high)in a normal power mode. In

star conﬁguration mode the temperature high ﬂag is reset by any activity detection (edge)

while the junction temperature is lower than T_j(dis)(high)in a normal power mode.

If the temperature high ﬂag is set the transmitter is disabled and pins TRXD0 and TRXD1

are switched off.

7.7.8 TXEN_BGE clamped ﬂag

The TXEN_BGE clamped ﬂag is set if pin TXEN is LOW and pin BGE is HIGH for longer

than t_{detCL(TXEN_BGE)}. The TXEN_BGE clamped ﬂag is reset if pin TXEN is HIGH or pin

BGE is LOW. If the TXEN_BGE ﬂag is set, the transmitter is disabled.

7.7.9 Bus error ﬂag

The bus error ﬂag is set if pin TXEN is LOW and pin BGE is HIGH and the data received

from the bus lines (pins BP and BM) is different to that received on pin TXD. The TJA1080

also expects that a data frame begins with a bit value other than the last bit of the previous

data frame.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

22 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

This is the case for a valid data frame which begins with the DATA_0 period of the

Transmission Start Sequence (TSS) and ends with the DATA_1 bit of the Frame End

Sequence (FES). Any violation of this frame format will be detected by the TJA1080.

Consequently, when transmitting a wake-up pattern, a bus error will be signalled. This

error indication should be ignored and the status register should be cleared by reading the

vector.

No action will be taken if the bus error ﬂag is set.

7.7.10 UV_VBATﬂag

The UV_VBATﬂag is set if the voltage on pin V_BATis lower than V_uvd(VBAT). The UV_VBATﬂag

is reset if the voltage is higher than V_uvd(VBAT)or by setting the wake ﬂag; see

Section 7.6.1.

7.7.11 UV_VCCﬂag

The UV_VCCﬂag is set if the voltage on pin V_CCis lower than V_uvd(VCC)for longer than

_det(uv)(VCC). The ﬂag is reset if the voltage on pin V_CCis higher than V_uvd(VCC)for longer

than t_rec(uv)(VCC)or the wake ﬂag is set; see Section 7.6.2.

t

7.7.12 UV_VIOﬂag

The UV_VIOﬂag is set if the voltage on pin V_IOis lower than V_uvd(VIO)for longer than

t_det(uv)(VIO). The ﬂag is reset if the voltage on pin V_IOis higher than V_uvd(VIO)or the wake

ﬂag is set; see Section 7.6.3.

7.7.13 Error ﬂag

The error ﬂag is set if one of the status bits S4 to S12 is set. The error ﬂag is reset if none

of the S4 to S12 status bits are set; see Table 11.

7.8 TRXD collision

A TRXD collision is detected when two or more TJA1080s in star conﬁguration enter star

Receive mode.

7.9 Status register

The status register can be read out on pin ERRN by using pin EN as clock; the status bits

are given in Table 11. The timing diagram is illustrated in Figure 9.

The status register is accessible if the UV_VIOﬂag is not set in node or star conﬁguration. A

negative edge on pin EN starts the read out. Within the period t_d(EN-ERRN)after the ﬁrst

edge on pin EN, pin ERRN will go HIGH if it was previously LOW. On the second negative

edge on pin EN the ﬁrst status bit (S0) will be shifted out. The status bits are valid after

t_d(EN-ERRN). If no edge is detected on pin EN for longer than t_det(EN), the transceiver will

enter the state selected on pins EN and STBN (node conﬁguration) and status bit S4 to

S12 will be reset if the corresponding ﬂag has been reset.

Pin ERRN is LOW if the corresponding status bit is set.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

23 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 11. Status bits

Bit number Status bit

Description

S0

LOCAL WAKEUP

REMOTE WAKEUP

NODE CONFIG

PWON

local wake-up source ﬂag is redirected to this bit

remote wake-up source ﬂag is redirected to this bit

node conﬁguration ﬂag is redirected to this bit

status bit set means PWON ﬂag has been set previously

S1

S2

S3

S4

BUS ERROR

TEMP HIGH

status bit set means bus error ﬂag has been set previously

status bit set means temperature high ﬂag has been set previously

status bit set means temperature medium ﬂag has been set previously

status bit set means TXEN_BGE clamped ﬂag has been set previously

status bit set means UV_VBATﬂag has been set previously

S5

S6

TEMP MEDIUM

TXEN_BGE CLAMPED

UVVBAT

S7

S8

S9

UVVCC

status bit set means UV_VCCﬂag has been set previously

S10

S11

S12

UVVIO

status bit set means UV_VIOﬂag has been set previously

STAR LOCKED

TRXD COLLISION

status bit is set if star Locked mode has been entered previously

status bit is set if a TRXD collision has been detected previously

receive

only

receive

only

normal

standby

normal

0.7V

IO

STBN

EN

0.3V

IO

t

det(EN)

IO

t

d(stb)

t

d(stb)

0.7V

IO

0.3V

T

EN

t

d(EN-ERRN)

S0

0.7V

IO

S1

S2

ERRN

0.3V

IO

001aae444

Fig 9. Timing diagram for status bits

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

24 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

8. Limiting values

Table 12. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are referenced to GND.

Symbol

Parameter

Conditions

Min

−0.3

6.5

Max

Unit

V

V_BAT

supply voltage on pin V_BAT

no time limit

+60

operating range

no time limit

60

V

V_CC

V_BUF

V_IO

supply voltage

−0.3

4.75

−0.3

4.75

−0.3

2.2

+5.5

V

operating range

no time limit

5.25

V

supply voltage on pin V_BUF

supply voltage on pin V_IO

+5.5

V

operating range

no time limit

5.25

V

+5.5

V

operating range

5.25

V

V_INH1

V_INH2

V_WAKE

I_o(WAKE)

V_BGE

V_TXEN

V_TXD

voltage on pin INH1

voltage on pin INH2

voltage on pin WAKE

output current on pin WAKE

voltage on pin BGE

voltage on pin TXEN

voltage on pin TXD

voltage on pin ERRN

voltage on pin RXD

voltage on pin RXEN

voltage on pin EN

−0.3

−15

V_BAT+ 0.3

-

V

pin GND not connected

no time limit

mA

V

−0.3

−60

V_IO+ 0.3

+5.5

V

V_ERRN

V_RXD

V_RXEN

V_EN

V

V_STBN

V_TRXD0

V_TRXD1

V_BP

voltage on pin STBN

voltage on pin TRXD0

voltage on pin TRXD1

voltage on pin BP

+5.5

V

+5.5

V

+5.5

V

+60

V

V_BM

voltage on pin BM

−60

+60

V

[1]

[2]

[3]

[4]

V_trt

transient voltage

on pins BP and BM

on pin V_BAT

−200

6.5

+200

60

V

on pin V_BAT

V

on pin V_BAT

-

60

V

T_stg

T_vj

storage temperature

−55

+150

+8.0

°C

kV

V

[5]

[6]

[7]

[8]

[9]

virtual junction temperature

electrostatic discharge voltage

−40

V_ESD

HBM on pins BP and BM to ground

HBM at any other pin

MM on all pins

−8.0

−4.0

−200

−1000

+4.0

+200

+1000

CDM on all pins

V

[1] According to ISO 7637, part 3 test pulses a and b; Class C; see Figure 13; R_L= 45 Ω; C_L= 100 pF.

[2] According to ISO 7637, part 2 test pulses 1, 2, 3a and 3b; Class C; see Figure 13; R_L= 45 Ω; C_L= 100 pF.

[3] According to ISO 7637, part 2 test pulse 4; Class C; see Figure 13; R_L= 45 Ω; C_L= 100 pF.

[4] According to ISO 7637, part 2 test pulse 5b; Class C; see Figure 13; R_L= 45 Ω; C_L= 100 pF.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

25 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

[5] In accordance with IEC 60747-1. An alternative deﬁnition of virtual junction temperature T_vjis: T_vj= T_amb+ TD x R_th(j-a), where R_th(j-a)is

a ﬁxed value to be used for the calculation of T_vj. The rating for T_vjlimits the allowable combinations of power dissipation (P) and

ambient temperature (T_amb).

[6] HBM: C = 100 pF; R = 1.5 kΩ.

[7] HBM: C = 100 pF; R = 1.5 kΩ.

[8] MM: C = 200 pF; L = 0.75 µH; R = 10 Ω.

[9] CDM: C = 330 pF; R = 150 Ω.

9. Thermal characteristics

Table 13. Thermal characteristics

Symbol

R_th(j-a)

Parameter

Conditions

in free air

Typ

126

-

Unit

K/W

thermal resistance from junction to ambient

thermal resistance from junction to substrate

R_th(j-s)

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

26 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

10. Static characteristics

Table 14. Static characteristics

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Pin V_BAT

I_BAT

Parameter

Conditions

Min

Typ

Max

Unit

supply current on pin V_BATlow power modes in node

conﬁguration

-

35

50

µA

star Sleep mode

-

40

50

150

1

µA

mA

V

star Standby mode

normal power modes

-

75

-

0.075

3.8

V_uvd(VBAT)

undervoltage detection

voltage on pin V_BAT

2.75

4,5

Pin V_CC

I_CC

supply current

low power modes

−1

0

+5

15

µA

Normal mode; V_BGE= 0 V;

-

10

mA

V_TXEN= V_IO; Receive only

mode; star Idle mode

[3]

Normal mode; V_BGE= V_IO;

-

28.5

10

35

15

mA

V

_TXEN= 0 V; V_BUFopen

Normal mode; V_BGE= V_IO;

_TXEN= 0 V; R_bus= ∞ Ω

V

star Transmit mode

star Receive mode

-

50

38

3.8

62

42

4.5

mA

V

-

V_uvd(VCC)

undervoltage detection

voltage on pin V_CC

2.75

Pin V_IO

I_IO

supply current on pin V_IOlow power modes

Normal and Receive only

mode; V_TXD= V_IO

−1

+1

30

+5

µA

-

1000

V_uvd(VIO)

V_uvr(VIO)

undervoltage detection

voltage on pin V_IO

1

1.5

2

V

undervoltage recovery

voltage on pin V_IO

1

1.6

2.2

<tbd>

V

V_uvhys(VIO)

undervoltage hysteresis

voltage on pin V_IO

25

<tbd>

mV

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

27 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 14. Static characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Pin V_BUF

I_BUF

Parameter

Conditions

Min

Typ

Max

Unit

supply current on pin

V_BUF

low power modes in node

conﬁguration

−1

0

+5

µA

low power modes in star

conﬁguration

V_BUF= 0 V; V_CC= 0 V

V_BUF= 5.25 V

−40

−1

-

−20

0

+1

+5

35

µA

mA

[3]

Normal mode; V_BGE= V_IO;

26.5

V_TXEN= 0 V; V_BUF= V_CC

star Transmit mode

-

47

35

10

62

42

15

mA

star Receive mode

Normal mode; V_BGE= 0 V;

V_TXEN= V_IO; Receive only

mode; star Idle mode

V_BUF(on)

on-state voltage on pin

V_BUF

V_CCswitch is switched on;

Normal mode; V_BGE= V_IO;

V

_CC− 0.25 V_CC− 0.05 V_CC

V

V_TXEN= 0 V; V_CC> maximum

value of V_uvd(VCC)

V_BUF(off)

off-state voltage on pin

V_BUF

V_CCswitch is switched off; low

power modes in star

4.5

4.9

5.25

conﬁguration; V_CC< minimum

value of V_uvd(VCC)

Pin EN

V_IH(EN)

HIGH-level input voltage

on pin EN

0.7V_IO

−0.3

3

0.5V_IO

5.5

V

V_IL(EN)

I_IH(EN)

I_IL(EN)

LOW-level input voltage

on pin EN

0.5V_IO

0.3V_IO

11

V

HIGH-level input current

on pin EN

V_EN= 0.7V_IO

V_EN= 0 V

8

0

µA

LOW-level input current

on pin EN

−1

+1

Pin STBN

V_IH(STBN)

HIGH-level input voltage

on pin STBN

0.7V_IO

−0.3

3

0.5V_IO

5.5

V

V_IL(STBN)

I_IH(STBN)

I_IL(STBN)

LOW-level input voltage

on pin STBN

0.5V_IO

0.3V_IO

11

V

HIGH-level input current

on pin STBN

V_STBN= 0.7V_IO

V_STBN= 0 V

8

0

µA

LOW-level input current

on pin STBN

−1

+1

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

28 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 14. Static characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Pin TXEN

V_IH(TXEN)

HIGH-level input voltage

on pin TXEN

0.7V_IO

−0.3

−1

0.5V_IO

V_IO+ 0.3

0.3V_IO

+1

V

V_IL(TXEN)

I_IH(TXEN)

I_IL(TXEN)

I_L(TXEN)

LOW-level input voltage

on pin TXEN

0.5V_IO

V

HIGH-level input current

on pin TXEN

V_TXEN= V_IO

0

µA

LOW-level input current

on pin TXEN

V_TXEN= 0.3V_IO

−12

−1

−9

0

−3

leakage current on pin

TXEN

V_TXEN= 5.25 V; V_IO= 0 V

+1

Pin BGE

V_IH(BGE)

HIGH-level input voltage

on pin BGE

0.7V_IO

−0.3

3

0.5V_IO

V_IO+ 0.3

0.3V_IO

11

V

V_IL(BGE)

I_IH(BGE)

I_IL(BGE)

LOW-level input voltage

on pin BGE

0.5V_IO

V

HIGH-level input current

on pin BGE

V_BGE= 0.7V_IO

V_BGE= 0 V

8

0

µA

LOW-level input current

on pin BGE

−1

+1

Pin TXD

V_IH(TXD)

HIGH-level input voltage normal power modes

on pin TXD

0.7V_IO

−0.3

70

0.5V_IO

300

V_IO+ 0.3

0.3V_IO

650

V

V_IL(TXD)

I_IH(TXD)

I_IL(TXD)

LOW-level input voltage

on pin TXD

normal power modes

V

HIGH-level input current

on pin TXD

V_TXD= V_IO

µA

LOW-level input current

on pin TXD

normal power modes;

−5

0

+5

V_TXD= 0 V

low power modes

−1

0

+1

µA

I_LI(TXD)

input leakage current on V_TXD= 5.25 V; V_IO= 0 V

pin TXD

Pin RXD

I_OH(RXD)

HIGH-level output current V_RXD= V_IO− 0.4 V; V_IO= V_CC

on pin RXD

−2

−4

−15

mA

I_OL(RXD)

LOW-level output current V_RXD= 0.4 V

on pin RXD

2

7

20

Pin ERRN

I_OH(ERRN)

HIGH-level output current node conﬁguration;

−1500

−1

−550

−100

µA

on pin ERRN

V_ERRN= V_IO− 0.4 V;

V_IO= V_CC

star conﬁguration;

0

+1

V_ERRN= V_IO− 0.4 V;

V_IO= V_CC

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

29 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 14. Static characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_OL(ERRN)

LOW-level output current V_ERRN= 0.4 V

on pin ERRN

300

700

1500

µA

Pin RXEN

I_OH(RXEN)

HIGH-level output current V_RXEN= V_IO− 0.4 V;

−4

−1.5

−0.5

mA

on pin RXEN

V_IO= V_CC

I_OL(RXEN)

LOW-level output current V_RXEN= 0.4 V

on pin RXEN

1

3

8

Pins TRXD0 and TRXD1

V_IH(TRXD0)

V_IL(TRXD0)

V_OL(TRXD0)

V_IH(TRXD1)

V_IL(TRXD1)

V_OL(TRXD1)

HIGH-level input voltage star Idle and star Transmit

0.7V_BUF

−0.3

0.5V_BUF

+0.3

V_BUF+ 0.3 V

on pin TRXD0

mode

LOW-level input voltage

on pin TRXD0

star Idle and star Transmit

mode

0.3V_BUF

+0.8

V

LOW-level output voltage R_pu= 200 Ω

on pin TRXD0

−0.3

HIGH-level input voltage star Idle and star Transmit

0.7V_BUF

−0.3

0.5V_BUF

+0.3

V_BUF+ 0.3 V

on pin TRXD1

mode

LOW-level input voltage

on pin TRXD1

star Idle and star Transmit

mode

0.3V_BUF

+0.8

V

LOW-level output voltage R_pu= 200 Ω

−0.3

on pin TRXD1

Pins BP and BM

V_o(idle)(BP)idle output voltage on pin Normal, Receive only, star

0.4V_BUF

−0.1

0.5V_BUF

0.6V_BUF

+0.1

V

BP

Idle, star Transmit and star

Receive mode; V_TXEN= V_IO

Standby, go-to-sleep, Sleep,

star Standby and star Sleep

mode

0

V_o(idle)(BM)

idle output voltage on pin Normal, receive only, star

0.4V_BUF

−0.1

0.5V_BUF

0.6V_BUF

+0.1

BM

Idle, star Transmit and star

Receive mode; V_TXEN= V_IO

Standby, go to sleep, Sleep,

star Standby and star Sleep

mode

0

I_o(idle)BP

I_o(idle)BM

V_o(idle)(dif)

V_OH(dif)

V_OL(dif)

idle output current on pin −60 V < |V_BP| < +60 V

BP

1

3

7.5

mA

mV

idle output current on pin −60 V < |V_BM| < +60 V

BM

1

3

7.5

differential idle output

voltage

−25

600

−1200

0

+25

1200

−600

differential HIGH-level

output voltage

40 Ω < R_bus< 55 Ω;

_CC= V_BUF= 5 V

800

−800

V

differential LOW-level

output voltage

40 Ω < R_bus< 55 Ω;

_CC= V_BUF= 5 V

V

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

30 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 14. Static characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_IH(dif)

differential HIGH-level

input voltage

normal power modes;

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

150

225

300

mV

V_IL(dif)

differential LOW-level

input voltage

normal power modes;

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

−300

−400

150

10

−225

225

20

−150

−125

300

30

mV

mA

low power modes;

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

|V_{i(dif)det(act)}

|

activity detection

differential input voltage

(absolute value)

normal power modes

|I_o(sc)(BP)

|

short-circuit output

current on pin BP

(absolute value)

V

_BP= 0 V, 60 V

_BM= 0 V, 60 V

|I_o(sc)(BM)

|

short-circuit output

current on pin BM

(absolute value)

V

10

20

30

R_i(BP)

R_i(BM)

input resistance on pin BP Idle level; R_bus= ∞ Ω

10

20

40

kΩ

input resistance on pin

BM

Idle level; R_bus= ∞ Ω

R_{i(dif)(BP-BM)}

differential input

Idle level; R_bus= ∞ Ω

20

40

80

kΩ

resistance between pin

BP and pin BM

I_LI(BP)

I_LI(BM)

input leakage current on V_BP= 5 V;

pin BP _BAT= V_CC= V_IO= 0 V

−10

0

+10

µA

V

input leakage current on V_BM= 5 V;

pin BM _BAT= V_CC= V_IO= 0 V

−10

0

+10

V

V_{cm(bus)(DATA_0)}DATA_0 bus common

mode voltage

R_bus= 45 Ω

0.4V_BUF

−25

0.5V_BUF

0

0.6V_BUF

+25

V_{cm(bus)(DATA_1)}DATA_1 bus common

mode voltage

V

∆V_cm(bus)

bus common mode

voltage difference

mV

Pin INH1

V_OH(INH1)

HIGH-level output voltage I_INH1= −0.2 mA

V_BAT− 0.8

V

_BAT− 0.3 V_BAT

V

on pin INH1

I_L(INH1)

leakage current on pin

INH1

Sleep mode

−5

0

+5

-

µA

mA

I_OL(INH1)

LOW-level output current V_INH1= 0 V

on pin INH1

−15

−8

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

31 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 14. Static characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC.^[1][2]

Symbol

Pin INH2

V_OH(INH2)

Parameter

Conditions

Min

Typ

Max

Unit

HIGH-level output voltage I_INH2= −0.2 mA

on pin INH2

V_BAT− 0.8

V

0

_BAT− 0.3 V_BAT

V

I_L(INH2)

leakage current on pin

INH2

Sleep mode

−5

−15

+5

µA

mA

I_OL(INH2)

LOW-level output current V_INH2= 0 V

on pin INH2

−8

-

Pin WAKE

V_{th(det)(WAKE)}

detection threshold

voltage on pin WAKE

low power mode

2.5

3

3.7

4.5

11

−3

V

I_IL(WAKE)

I_IH(WAKE)

LOW-level input current

on pin WAKE

V_WAKE= 2.4 V for

t > t_wake(WAKE)

6.5

µA

HIGH-level input current

on pin WAKE

V_WAKE= 4.6 V for

t > t_wake(WAKE)

−11

−6.5

Temperature protection

T_{j(warn)(medium)}medium warning junction

temperature

155

180

165

190

175

200

°C

T_j(dis)(high)

high disable junction

temperature

[1] All parameters are guaranteed over the virtual junction temperature range by design, but only 100 % are tested at 125 °C for dies on

wafer level (pre-testing) and above this for cased products 100 % are tested at T_amb= −40 °C and +25 °C (ﬁnal testing) unless otherwise

speciﬁed. Both pre-testing and ﬁnal testing use correlated test conditions to cover the speciﬁed temperature and power supply voltage

range. For bare dies all parameters are only guaranteed with the backside of the bare die connected to ground.

[2] At power-up V_BATshould be supplied ﬁrst. When V_BATreaches 6.5 V, V_CCand V_IOmay be switched on with a delay of at least 60 µs with

respect to V_BAT

.

[3] Current ﬂows from V_CCto V_BUF. This means that the maximum sum current I_CC+ I_BUFis 35 mA.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

32 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

11. Dynamic characteristics

Table 15. Dynamic characteristics

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC^[1].

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Pins BP and BM

t_d(TXD-bus)

[2]

delay time from TXD to bus

Normal or star Transmit

mode

DATA_0

DATA_1

-

31

32

1

50

4

ns

[2]

[3]

∆t_d(TXD-bus)

delay time difference from TXD Normal or star Transmit

to bus

mode; between DATA_0

and DATA_1

t_d(TRXD-bus)

delay time from TRXD to bus

star Transmit mode

DATA_0

-

27

28

1

50

5

ns

DATA_1

[3][4]

∆t_d(TRXD-bus)

delay time difference from TRXD star Transmit mode;

to bus

between DATA_0 and

DATA_1

t_d(bus-RXD)

delay time from bus to RXD

normal or star Transmit

mode; C_RXD= 15 pF; see

Figure 11

DATA_0

DATA_1

-

28

30

2

50

5

ns

∆t_d(bus-RXD)

delay time difference from bus to normal or star Transmit

RXD

mode; C_RXD= 15 pF;

between DATA_0 and

DATA_1; see Figure 11

t_d(bus-TRXD)

delay time from bus to TRXD

star Receive mode; see

Figure 11

DATA_0

DATA_1

-

28

0

50

5

ns

[4]

∆t_d(bus-TRXD)

delay time difference from bus to star Receive mode;

TRXD

between DATA_0 and

DATA_1; see Figure 11

t_{d(TXEN-busidle)}

t_{d(TXEN-busact)}

delay time from TXEN to bus

idle

Normal mode

-

28

22

50

ns

delay time from TXEN to bus

active

Normal mode

t_{d(BGE-busidle)}

t_{d(BGE-busact)}

delay time from BGE to bus idle Normal mode

-

30

22

50

ns

delay time from BGE to bus

active

Normal mode

t_r(dif)(bus)

t_f(dif)(bus)

bus differential rise time

10 % to 90 %; R_L= 45 Ω;

C_L= 100 pF

8

12

23

ns

bus differential fall time

90 % to 10 %; R_L= 45 Ω;

C_L= 100 pF

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

33 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 15. Dynamic characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC^[1].

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

WAKE symbol detection

t_{det(wake)DATA_0}

t_{det(wake)idle}

t_det(wake)tot

DATA_0 wake-up detection time Standby, Sleep,

1

2.2

2.5

-

4

µs

star Standby or star Sleep

idle wake-up detection time

total wake-up detection time

1

4

mode;

50

115

−10 V < V_BP< +15 V;

−10 V < V_BM< +15 V

Undervoltage

t_det(uv)(VCC)

undervoltage detection time on

pin V_CC

100

1

-

670

5.2

ms

µs

t_rec(uv)(VCC)

t_det(uv)(VIO)

t_to(uv)(VCC)

undervoltage recovery time on

pin V_CC

undervoltage detection time on

pin V_IO

100

432

670

900

undervoltage time-out time on

pin V_CCfor entering Standby

mode

star conﬁguration; wake

ﬂag is set

Activity detection

t_{det(act)(TXEN)}

t_{det(act)(TRXD)}

t_{det(act)(bus)}

activity detection time on pin

TXEN

star conﬁguration

V_dif: 0 → 400 mV

100

140

150

200

250

ns

activity detection time on pin

TRXD

activity detection time on bus

pins

t_{det(idle)(TXEN)}

t_{det(idle)(TRXD)}

t_{det(idle)(bus)}

Star modes

t_{to(idle-sleep)}

t_{to(tx-locked)}

idle detection time on pin TXEN star conﬁguration

idle detection time on pin TRXD star conﬁguration

100

50

140

75

200

100

250

ns

idle detection time on bus pins

V_dif: 400 mV → 0

100

150

idle to sleep time-out time

640

2600

64

-

2660

10400

333

ms

µs

ms

µs

transmit to locked time-out time

receive to locked time-out time

locked to sleep time-out time

locked to idle time-out time

t_{to(rx-locked)}

t_{to(locked-sleep)}

t_{to(locked-idle)}

Node modes

t_d(STBN-RXD)

t_d(STBN-INH2)

t_h(gotosleep)

Status register

t_det(EN)

1.4

5.1

STBN to RXD delay time

STBN to INH2 delay time

go-to-sleep hold time

wake ﬂag set

-

1

2

µs

-

3

10

50

20

35

detection time on pin EN

time period on pin EN

for mode control

20

4

-

80

20

2

µs

T_EN

for reading status bits

-

t_d(EN-ERRN)

delay time from EN to ERRN

-

0.8

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

34 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

Table 15. Dynamic characteristics …continued

All parameters are guaranteed for V_BAT= 6.5 V to 60 V; V_CC= 4.75 V to 5.25 V; V_BUF= 4.75 V to 5.25 V; V_IO= 2.2 V to 5.25 V;

T_vj= −40 °C to + 150 °C; R_bus= 45 Ω; R_TRXD= 200 Ω unless otherwise speciﬁed. All voltages are deﬁned with respect to

ground; positive currents ﬂow into the IC^[1].

Symbol

WAKE

Parameter

Conditions

Min

Typ

Max

Unit

t_wake(WAKE)

wake-up time on pin WAKE

low power mode; falling

edge on pin WAKE;

6.5 V < V_BAT< 27 V

5

25

100

µs

low power mode; falling

edge on pin WAKE;

27 V < V_BAT< 60 V

25

75

-

175

µs

Miscellaneous

t_{detCL(TXEN_BGE)}TXEN_BGE clamp detection

time

2600

10400

[1] At power-up V_BATshould be supplied ﬁrst. When V_BATreaches 6.5 V, V_CCand V_IOmay be switched on with a delay of at least 60 µs with

respect to V_BAT

.

[2] Rise and fall time (10 % to 90 %) of t_r(TXD)and t_f(TXD)= 5 ns.

[3] Rise and fall time (10 % to 90 %) of t_r(TRXD)and t_f(TRXD)= 5 ns.

[4] The worst case asymmetry from one branch to another is the sum of the delay difference from TRXD0 and TRXD1 to DATA_0 and

DATA_1 plus the delay difference from DATA_0 and DATA_1 to TRXD0 and TRXD1. The TJA1080 should not be used in topologies with

cascaded stars.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

35 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

V

(mV)

dif

22.5 ns

600

300

57.5 ns

−300

−600

80 ns

∆t

d(bus-RXD)

RXD

V

(mV)

dif

22.5 ns

600

300

57.5 ns

−300

−600

80 ns

∆t

d(bus-RXD)

RXD

001aae446

V_difis the receiver test signal.

Fig 11. Receiver test signal

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

37 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

12. Test information

+12 V

+5 V

100

nF

10 µF

22 µF

4

19

14

20

V

BUF

IO

CC

BAT

18

BP

R

L

C

L

17

7

TJA1080

BM

RXD

15 pF

001aae447

Fig 12. Test circuit for dynamic characteristics

ISO 7637

PULSE

GENERATOR

12 V or 42 V

+5 V

100

nF

10 µF

4

19

14

20

V

BUF

IO

CC

BAT

1 nF

18

17

BP

ISO 7637

PULSE

GENERATOR

R

L

C

L

TJA1080

BM

1 nF

001aae448

The waveforms of the applied transients are in accordance with ISO 7637, test pulses 1, 2, 3a,

3b, 4 and 5.

Test conditions:

Normal mode: bus idle

Normal mode: bus active; TXD at 5 MHz and TXEN at 1 kHz

Fig 13. Test circuit for automotive transients

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

38 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

13. Package outline

SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm

SOT339-1

D

E

A

X

c

H

v

M

A

y

E

Z

20

11

Q

A

2

A

(A )

3

A

1

pin 1 index

θ

L

p

L

1

10

detail X

w

M

b

p

e

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

A

(1)

UNIT

A

b

c

D

E

e

H

L

Q

v

w

y

Z

θ

1

2

3

p

E

p

max.

8^o

0^o

0.21

0.05

1.80

1.65

0.38

0.25

0.20

0.09

7.4

7.0

5.4

5.2

7.9

7.6

1.03

0.63

0.9

0.7

0.9

0.5

mm

2

0.65

0.25

1.25

0.2

0.13

0.1

Note

1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

99-12-27

03-02-19

SOT339-1

MO-150

Fig 14. Package outline SOT339-1 (SSOP20)

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

39 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

14. Soldering

14.1 Introduction to soldering surface mount packages

There is no soldering method that is ideal for all surface mount IC packages. Wave

soldering can still be used for certain surface mount ICs, but it is not suitable for ﬁne pitch

SMDs. In these situations reﬂow soldering is recommended.

14.2 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and

binding agent) to be applied to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement. Driven by legislation and

environmental forces the worldwide use of lead-free solder pastes is increasing.

Several methods exist for reﬂowing; for example, convection or convection/infrared

heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)

vary between 100 seconds and 200 seconds depending on heating method.

Typical reﬂow temperatures range from 215 °C to 260 °C depending on solder paste

material. The peak top-surface temperature of the packages should be kept below:

Table 16. SnPb eutectic process - package peak reﬂow temperatures (from J-STD-020C

July 2004)

Package thickness

< 2.5 mm

Volume mm³< 350

240 °C + 0/−5 °C

225 °C + 0/−5 °C

Volume mm³≥ 350

225 °C + 0/−5 °C

≥ 2.5 mm

Table 17. Pb-free process - package peak reﬂow temperatures (from J-STD-020C July

2004)

Package thickness

Volume mm³< 350

Volume mm³350 to

2000

Volume mm³> 2000

< 1.6 mm

260 °C + 0 °C

250 °C + 0 °C

260 °C + 0 °C

250 °C + 0 °C

245 °C + 0 °C

260 °C + 0 °C

245 °C + 0 °C

1.6 mm to 2.5 mm

≥ 2.5 mm

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

14.3 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices

(SMDs) or printed-circuit boards with a high component density, as solder bridging and

non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally

developed.

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward

pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

40 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

parallel to the transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

• For packages with leads on four sides, the footprint must be placed at a 45° angle to

the transport direction of the printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

During placement and before soldering, the package must be ﬁxed with a droplet of

adhesive. The adhesive can be applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C

or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated ﬂux will eliminate the need for removal of corrosive residues in most

applications.

14.4 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low voltage

(24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time must be

limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within

2 seconds to 5 seconds between 270 °C and 320 °C.

14.5 Package related soldering information

Table 18. Suitability of surface mount IC packages for wave and reﬂow soldering methods

Package^[1]

Soldering method

Wave

Reﬂow^[2]

BGA, HTSSON..T^[3], LBGA, LFBGA, SQFP,

SSOP..T^[3], TFBGA, VFBGA, XSON

not suitable

suitable

DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP,

HSQFP, HSSON, HTQFP, HTSSOP, HVQFN,

HVSON, SMS

not suitable^[4]

suitable

PLCC^[5], SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended^[5][6]

not recommended^[7]

not suitable

suitable

SSOP, TSSOP, VSO, VSSOP

CWQCCN..L^[8], PMFP^[9], WQCCN..L^[8]

suitable

not suitable

[1] For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026);

order a copy from your Philips Semiconductors sales ofﬁce.

[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the

maximum temperature (with respect to time) and body size of the package, there is a risk that internal or

external package cracks may occur due to vaporization of the moisture in them (the so called popcorn

effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit

Packages; Section: Packing Methods.

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

41 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

[3] These transparent plastic packages are extremely sensitive to reﬂow soldering conditions and must on no

account be processed through more than one soldering cycle or subjected to infrared reﬂow soldering with

peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reﬂow oven. The package

body peak temperature must be kept as low as possible.

[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the

solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink

on the top side, the solder might be deposited on the heatsink surface.

[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave

direction. The package footprint must incorporate solder thieves downstream and at the side corners.

[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is

deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger

than 0.65 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered

pre-mounted on ﬂex foil. However, the image sensor package can be mounted by the client on a ﬂex foil by

using a hot bar soldering process. The appropriate soldering proﬁle can be provided on request.

[9] Hot bar soldering or manual soldering is suitable for PMFP packages.

15. Abbreviations

Table 19. Abbreviations

Abbreviation

CAN

Description

Communications Area Network

Charge Device Model

ElectroMagnetic Compatibility

ElectroMagnetic Emission

ElectroMagnetic Interference

ElectroStatic Discharge

Human Body Model

CDM

EMC

EME

EMI

ESD

HBM

MM

Machine Model

PWON

Power-on

16. References

[1] EPL — FlexRay Communications System Electrical Physical Layer Speciﬁcation

Version 2.1 Rev. A, FlexRay Consortium, Dec 2005

[2] PS41 — Product Speciﬁcation: TJA1041; High speed CAN transceiver,

www.semiconductors.philips.com

[3] PS54 — Product Speciﬁcation: TJA1054; Fault-tolerant CAN transceiver,

www.semiconductors.philips.com

17. Revision history

Table 20. Revision history

Document ID

Release date

20060720

Data sheet status

Change notice

Supersedes

TJA1080_1

Objective data sheet

-

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

42 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

18. Legal information

18.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.semiconductors.philips.com.

malfunction of a Philips Semiconductors product can reasonably be expected

18.2 Deﬁnitions

to result in personal injury, death or severe property or environmental

damage. Philips Semiconductors accepts no liability for inclusion and/or use

of Philips Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. Philips Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Philips Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Philips Semiconductors

sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet,

the full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation

of liability, unless explicitly otherwise agreed to in writing by Philips

18.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations

or warranties, expressed or implied, as to the accuracy or completeness of

such information and shall have no liability for the consequences of use of

such information.

Semiconductors. In case of any inconsistency or conﬂict between information

in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — Philips Semiconductors reserves the right to

make changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

18.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — Philips Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

19. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

TJA1080_1

Preliminary data sheet

Rev. 01 — 20 July 2006

43 of 44

TJA1080

Philips Semiconductors

FlexRay transceiver

20. Contents

1

General description . . . . . . . . . . . . . . . . . . . . . . 1

7.7.4

7.7.5

7.7.6

7.7.7

7.7.8

7.7.9

7.7.10

7.7.11

7.7.12

7.7.13

7.8

Power-on ﬂag . . . . . . . . . . . . . . . . . . . . . . . . . 22

Node or star conﬁguration ﬂag. . . . . . . . . . . . 22

Temperature medium ﬂag . . . . . . . . . . . . . . . 22

Temperature high ﬂag . . . . . . . . . . . . . . . . . . 22

TXEN_BGE clamped ﬂag. . . . . . . . . . . . . . . . 22

Bus error ﬂag . . . . . . . . . . . . . . . . . . . . . . . . . 22

UV_VBATﬂag. . . . . . . . . . . . . . . . . . . . . . . . . . . 23

UV_VCCﬂag . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

UV_VIOﬂag. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Error ﬂag . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

TRXD collision . . . . . . . . . . . . . . . . . . . . . . . . 23

Status register . . . . . . . . . . . . . . . . . . . . . . . . 23

2

2.1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Optimized for time triggered communication

systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Low power management . . . . . . . . . . . . . . . . . 2

Diagnosis (detection and signalling). . . . . . . . . 2

Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2.2

2.3

2.4

3

4

5

Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 3

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4

6

6.1

6.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 5

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.9

8

Limiting values . . . . . . . . . . . . . . . . . . . . . . . . 25

Thermal characteristics . . . . . . . . . . . . . . . . . 26

Static characteristics . . . . . . . . . . . . . . . . . . . 27

Dynamic characteristics. . . . . . . . . . . . . . . . . 33

Test information. . . . . . . . . . . . . . . . . . . . . . . . 38

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 39

9

7

7.1

Functional description . . . . . . . . . . . . . . . . . . . 6

Operating conﬁgurations. . . . . . . . . . . . . . . . . . 6

Node conﬁguration . . . . . . . . . . . . . . . . . . . . . . 6

Star conﬁguration . . . . . . . . . . . . . . . . . . . . . . . 6

Bus activity and idle detection . . . . . . . . . . . . . 7

Operating modes in node conﬁguration . . . . . . 7

Normal mode . . . . . . . . . . . . . . . . . . . . . . . . . 14

Receive only mode . . . . . . . . . . . . . . . . . . . . . 14

Standby mode. . . . . . . . . . . . . . . . . . . . . . . . . 14

Go-to-sleep mode. . . . . . . . . . . . . . . . . . . . . . 14

Sleep mode. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Operating modes in star conﬁguration . . . . . . 15

Star Idle mode . . . . . . . . . . . . . . . . . . . . . . . . 17

Star Transmit mode. . . . . . . . . . . . . . . . . . . . . 18

Star Receive mode . . . . . . . . . . . . . . . . . . . . . 18

Star Standby mode. . . . . . . . . . . . . . . . . . . . . 18

Star Sleep mode. . . . . . . . . . . . . . . . . . . . . . . 18

Star Locked mode. . . . . . . . . . . . . . . . . . . . . . 19

Start-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Node conﬁguration . . . . . . . . . . . . . . . . . . . . . 19

Star conﬁguration . . . . . . . . . . . . . . . . . . . . . . 19

Wake-up mechanism . . . . . . . . . . . . . . . . . . . 19

Node conﬁguration . . . . . . . . . . . . . . . . . . . . . 19

Star conﬁguration . . . . . . . . . . . . . . . . . . . . . . 19

Bus wake-up. . . . . . . . . . . . . . . . . . . . . . . . . . 20

Local wake-up via pin WAKE . . . . . . . . . . . . . 20

Fail silent behavior . . . . . . . . . . . . . . . . . . . . . 20

10

11

12

13

14

14.1

7.1.1

7.1.2

7.1.3

7.2

7.2.1

7.2.2

7.2.3

7.2.4

7.2.5

7.3

7.3.1

7.3.2

7.3.3

7.3.4

7.3.5

7.3.6

7.4

7.4.1

7.4.2

7.5

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Introduction to soldering surface mount

packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 40

Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 40

Manual soldering . . . . . . . . . . . . . . . . . . . . . . 41

Package related soldering information. . . . . . 41

14.2

14.3

14.4

14.5

15

16

17

Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 42

References. . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Revision history . . . . . . . . . . . . . . . . . . . . . . . 42

18

Legal information . . . . . . . . . . . . . . . . . . . . . . 43

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 43

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 43

18.1

18.2

18.3

18.4

19

20

Contact information . . . . . . . . . . . . . . . . . . . . 43

Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

7.5.1

7.5.2

7.5.3

7.5.4

7.6

7.6.1

7.6.2

7.6.3

7.7

7.7.1

7.7.2

7.7.3

V

_BATundervoltage. . . . . . . . . . . . . . . . . . . . . . 21

_CCundervoltage . . . . . . . . . . . . . . . . . . . . . . 21

_IOundervoltage. . . . . . . . . . . . . . . . . . . . . . . 21

Flags. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Local wake-up source ﬂag . . . . . . . . . . . . . . . 21

Remote wake-up source ﬂag . . . . . . . . . . . . . 21

Wake ﬂag . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.semiconductors.philips.com.

For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 20 July 2006

Document identifier: TJA1080_1


型号：	TJA1080
厂家：	NXP
描述：	FlexRay transceiver FlexRay收发器
文件：	总44页 (文件大小：210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TJA1080 [NXP]

相关型号：

TJA1080A

TJA1080ATS/1

TJA1080ATS/2/T

TJA1080ATS2

TJA1080A_11

TJA1080TS

TJA1080TS,118

TJA1080TS,512

TJA1080TS,518

TJA1080TS/N

TJA1080TS/N,118

TJA1080TS/N/C,512