TO-236AB [NXP]
20 v, 3.5A P-channel Trench MOSFET; 20 V ， 3.5A P沟道沟槽MOSFET
| 型号： | TO-236AB |
| 厂家： | 
NXP |
| 描述： | 20 v, 3.5A P-channel Trench MOSFET |
| 文件： | 总15页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tamb = 25 °C
-
-
-
-
-20
V
V
A
VGS
ID
gate-source
voltage
-12
-
12
[1]
drain current
VGS = -4.5 V; Tamb = 25 °C
-3.5
Static characteristics
RDSon drain-source
VGS = -4.5 V; ID = -2.4 A;
pulsed; tp ≤ 300 µs; δ ≤ 0.01;
Tj = 25 °C
-
48
55
mΩ
on-state
resistance
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
S
SOT23 (TO-236AB)
017aaa094
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMV48XP
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
PMV48XP
Marking code[1]
KN%
[1] % = placeholder for manufacturing site code
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
2 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tamb = 25 °C
-
VGS
-12
12
V
[1]
[1]
ID
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-3.5
-2.2
-14
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
510
930
mW
mW
-
Tsp = 25 °C
-
4150 mW
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
°C
°C
°C
Tamb
Tstg
-55
-65
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
-1
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
3 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
017aaa125
2
−10
I
D
(A)
Limit R
= V /I
DS D
DSon
−10
(1)
(2)
−1
−1
(3)
(4)
(5)
−10
(6)
−2
−10
−10
−1
2
−1
−10
−10
V
DS
(V)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
213
117
Max
245
135
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
25
30
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
4 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
017aaa126
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.2
0.25
0.1
0.05
10
0.02
0
0.01
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa127
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0
0.05
10
0.02
0.01
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
5 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.75 -1
-1.25
IDSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tamb = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-1
µA
nA
IGSS
-
-100
55
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
48
mΩ
VGS = -4.5 V; ID = -2.4 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C
-
-
-
70
71
12
80
81
-
mΩ
mΩ
S
VGS = -2.5 V; ID = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
gfs
forward
VDS = -12 V; ID = -2 A; pulsed;
transconductance
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
8.5
1.8
1.8
11
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
1000
130
90
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
-
-
-
-
11
13
61
23
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -2.4 A; VGS = 0 V; Tj = 25 °C;
-
-0.82 -1.2
V
tp ≤ 300 µs; δ ≤ 0.01
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
6 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
017aaa128
017aaa129
−3
−4
−5
−6
−14
−10
V
= −4.5 V
I
GS
D
(A)
−12
I
D
−3 V
−2.25 V
(A)
−10
−8
−6
−4
−2
0
−10
(1)
(2)
(3)
−2 V
−10
−10
−1.8 V
0
−1
−2
−3
−4
−5
(V)
0.0
−0.5
−1.0
− 1.5
V
DS
V
(V)
GS
Tj = 25 °C
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa130
017aaa131
0.20
0.25
R
DSon
R
DSon
(Ω)
(Ω)
(1)
(2)
0.16
0.12
0.08
0.04
0.00
0.20
0.15
0.10
0.05
0.00
(3)
(4)
(5)
(1)
(2)
0.0
−4.0
−8.0
−12.0
0
−1
−2
−3
−4
−5
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = -2.4 A
(1) VGS = -1.8 V
(2) VGS = -2.0 V
(3) VGS = -2.25 V
(4) VGS = -3.0 V
(5) VGS = -4.5 V
(1) Tj = 125 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
7 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
017aaa132
017aaa133
−14
2.0
1.5
1.0
0.5
0.0
I
D
(A)
−12
a
(1)
(2)
−10
−8
−6
−4
−2
0
(2)
(1)
0.0
−1.0
−2.0
−3.0
−60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa134
017aaa135
4
−1.6
10
V
GS(th)
(V)
C
(pF)
(1)
(2)
−1.2
−0.8
−0.4
0.0
(1)
3
10
(2)
(3)
2
10
(3)
10
−10
−1
2
−60
0
60
120
180
−1
10
10
T (°C)
j
V
(V)
DS
f = 1 MHz; VGS = 0 V
(1) Ciss
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
8 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
017aaa136
−4.5
V
DS
V
GS
I
(V)
D
−3.0
V
GS(pl)
V
GS(th)
GS
V
−1.5
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0.0
0
2
4
6
8
10
(nC)
Q
G
ID = -2.4 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa138
−14
S
I
(A)
−12
−10
−8
−6
−4
−2
0
(1)
(2)
0.0
−0.4
−0.8
−1.2
V
(V)
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
9 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 17. Package outline SOT23 (TO-236AB)
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
10 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
9. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 18. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 19. Wave soldering footprint for SOT23 (TO-236AB)
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
11 of 15
PMV48XP
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20 V, 3.5 A P-channel Trench MOSFET
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMV48XP v.1
20101221
Product data sheet
-
-
PMV48XP
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
12 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
11.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
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representation or warranty that such applications will be suitable for the
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data sheet shall define the specification of the product as agreed between
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Notwithstanding any damages that customer might incur for any reason
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changes to information published in this document, including without
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products are sold subject to the general terms and conditions of commercial
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agreement is concluded only the terms and conditions of the respective
PMV48XP
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Product data sheet
Rev. 1 — 21 December 2010
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PMV48XP
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20 V, 3.5 A P-channel Trench MOSFET
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
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Notice: All referenced brands, product names, service names and trademarks
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Non-automotive qualified products — Unless this data sheet expressly
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in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMV48XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 21 December 2010
14 of 15
PMV48XP
NXP Semiconductors
20 V, 3.5 A P-channel Trench MOSFET
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
11.1
11.2
11.3
11.4
12
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 December 2010
Document identifier: PMV48XP
相关型号：
TO-247
Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh V Power MOSFET in a TO-247 package
STMICROELECTR
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