TYN20X-800T [NXP]
SCR; SCR
| 型号： | TYN20X-800T |
| 厂家： | 
NXP |
| 描述： | SCR |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TYN20X-800T
SCR
23 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full
pack" plastic package intended for use in applications requiring very high inrush current
capability, high thermal cycling performance and high junction temperature capability
(Tj(max) = 150 °C).
1.2 Features and benefits
High bidirectional blocking voltage capability
High junction operating temperature capability
High thermal cycling performance
Isolated package
Planar passivated for voltage ruggedness and reliability
Very high current surge capability
•
•
•
•
•
•
1.3 Applications
Capacitive Discharge Ignition (CDI)
•
•
•
•
•
Crowbar protection
Inrush protection
Motor control
Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
VRRM
ITSM
repetitive peak off-
state voltage
-
-
800
V
repetitive peak reverse
voltage
-
-
-
-
800
210
V
A
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
-
-
231
A
Tj
junction temperature
RMS on-state current
-
-
-
-
150
20
°C
A
IT(RMS)
half sine wave; Th ≤ 75 °C; Fig. 1; Fig. 2
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NXP Semiconductors
TYN20X-800T
SCR
Symbol
Parameter
Conditions
Min
-
Typ
4.5
-
Max
32
-
Unit
mA
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%
300
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
A
K
1
K
cathode
anode
gate
G
2
A
sym037
3
G
mb
n.c.
mounting base; isolated
1
2 3
TO-220F (SOT186A)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
TYN20X-800T
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDRM
Parameter
Conditions
Min
Max
800
800
12.7
20
Unit
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
-
-
-
-
V
V
A
A
VRRM
IT(AV)
half sine wave; Th ≤ 75 °C; Fig. 3
IT(RMS)
half sine wave; Th ≤ 75 °C; Fig. 1; Fig. 2
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
Symbol
Parameter
Conditions
Min
Max
Unit
ITSM
non-repetitive peak on-state
current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5
-
210
A
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
-
231
A
I2t
I2t for fusing
A2s
tp = 10 ms; sine-wave pulse
-
-
220.5
50
dIT/dt
rate of rise of on-state current
IT = 40 A; IG = 200 mA; dIG/
dt = 200 mA/µs
A/µs
IGM
peak gate current
-
5
A
VRGM
PGM
PG(AV)
Tstg
peak reverse gate voltage
peak gate power
-
5
V
-
20
1
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
150
150
Tj
003aaj875
003aaj873
120
25
I
I
T(RMS)
(A)
T(RMS)
(A)
75 °C
20
90
60
30
0
15
10
5
0
-50
-2
10
-1
10
1
10
0
50
100
150
T
( C)
°
h
surge duration (s)
Fig. 1. RMS on-state current as a function of heatsink Fig. 2. RMS on-state current as a function of surge
temperature; maximum values duration; maximum values
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
003aaj877
25
50
T
h(max)
(°C)
P
tot
(W)
20
70
a=1.57
1.9
2.2
15
10
5
90
2.8
conduction form
4
110
angle
(degrees)
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
130
150
α
0
0
2.5
5
7.5
10
12.5
15
I
(A)
T(AV)
Fig. 3. Total power dissipation as a function of average on-state current; maximum values
003aaj447
240
I
TSM
(A)
180
120
60
0
I
I
T
TSM
t
t
p
T
= 25 °C max
j(init)
2
3
1
10
10
10
number of cycles (n)
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
003aaj446
4
10
I
TSM
(A)
3
2
10
(1)
10
I
I
T
TSM
t
t
p
T
= 25 °C max
j(init)
10
-5
10
-4
-3
10
-2
10
10
t (s)
p
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
full or half cycle; with heatsink
compound; Fig. 6
-
-
4
K/W
full or half cycle; without heatsink
compound; Fig. 6
-
-
-
5.5
-
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
55
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
003aaj935
10
Z
th(j-h)
(K/W)
(2)
1
(1)
-1
-2
-3
10
10
10
t
p
P
d =
T
t
t
p
T
-5
-4
-3
10
-2
10
-1
10
10
10
1
10
t
p
(s)
(1) with heatsink compound
(2) without heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Symbol
Isolation characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Th = 25 °C
-
-
2500
V
Cisol
isolation capacitance
from anode to external heatsink ;
f = 1 MHz; Th = 25 °C
-
10
-
pF
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT gate trigger current
IL
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 9
-
-
-
-
-
4.5
21
32
60
40
1.5
1.3
mA
mA
mA
V
latching current
holding current
IH
16
VT
VGT
on-state voltage
gate trigger voltage
IT = 32 A; Tj = 25 °C; Fig. 10
1.2
0.7
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
Fig. 11
0.2
0.4
-
V
TYN20X-800T
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NXP Semiconductors
TYN20X-800T
SCR
Symbol
Parameter
Conditions
Min
Typ
0.2
0.2
Max
1
Unit
mA
mA
ID
IR
off-state current
reverse current
VD = 800 V; Tj = 150 °C
Tj = 150 °C; VR = 800 V
-
-
1
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%
300
-
-
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit
003aaj868
003aaj867
3
3
I
I
L
GT
I
I
L(25°C)
GT(25°C)
2
2
1
0
1
0
-50
0
50
100
150
-50
0
50
100
150
T (°C)
j
T (°C)
j
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of
junction temperature
junction temperature
003aaj878
003aaj869
3
40
I
T
I
H
(A)
I
H(25°C)
30
2
20
10
0
(1)
(2)
(3)
1
0
-50
0
50
100
150
0
1
2
T (°C)
j
V
(V)
T
Vo = 1.0485 V; Rs = 0.0133 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
003aaj871
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
-50
0
50
100
150
T (°C)
j
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
TYN20X-800T
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NXP Semiconductors
TYN20X-800T
SCR
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
w
M
c
e
e
1
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
(1)
(2)
T
L
A
A
b
c
D
D
E
e
L
P
Q
q
w
b
b
e
j
K
L
1
UNIT
mm
2
1
1
1
2
1
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
02-04-09
06-02-14
SOT186A
3-lead TO-220F
Fig. 12. TO-220F (SOT186A)
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
9. Legal information
9.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
9.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
TYN20X-800T
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Product data sheet
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NXP Semiconductors
TYN20X-800T
SCR
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
TYN20X-800T
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NXP Semiconductors
TYN20X-800T
SCR
10. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
Pinning information ...............................................2
Ordering information .............................................2
Limiting values .......................................................2
Thermal characteristics .........................................5
Isolation characteristics ........................................6
Characteristics .......................................................6
Package outline ..................................................... 9
9
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
9.1
9.2
9.3
9.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 July 2012
TYN20X-800T
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Product data sheet
23 July 2012
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