Z0103MA_技术文档

Z0103/07/09 series

Triacs

Rev. 02 — 12 September 2002

Product data

1. Product proﬁle

1.1 Description

Passivated triacs in conventional and surface mounting packages. Intended for use in

applications requiring high bidirectional transient and blocking voltage capability.

Available in a range of gate current sensitivities for optimum performance.

Product availability:

Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B

Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.

1.2 Features

■ Blocking voltage to 800 V (NA and NN ■ 1 A on-state RMS current.

types)

1.3 Applications

■ Home appliances

■ Fan controllers

■ Small motor control

■ Small loads in industrial process

control.

2. Pinning information

Table 1:

Pinning - SOT54B (TO-92), SOT223, simpliﬁed outline and symbol

Description

Simpliﬁed outline

Symbol

1

2

3

1

2

3

4

terminal 2 (T2)

gate (G)

SOT54B

(TO-92)

4

terminal 1 (T1)

terminal 2 (T2)

gate (G)

T2

T1

1

2

3

SOT223

G

MSB033

MBL300

1

2

3

terminal 2 (T2)

MSB002 - 1

Top view

SOT54B (TO-92)

SOT223

Z0103/07/09 series

Philips Semiconductors

Triacs

3. Ordering information

3.1 Ordering options

Table 2:

Ordering information

Part Number

Z0103MA

Z0103NA

Z0107MA

Z0107NA

Z0109MA

Z0109NA

Z0103MN

Z0103NN

Z0107MN

Z0107NN

Z0109MN

Z0109NN

Voltage (V_DRM

600 V

)

Gate Sensitivity (I_GT

)

Package

3 mA

SOT54B (TO-92)

SOT223

800 V

3 mA

600 V

5 mA

800 V

5 mA

600 V

10 mA

3 mA

800 V

600 V

800 V

3 mA

SOT223

600 V

5 mA

SOT223

800 V

5 mA

SOT223

600 V

10 mA

SOT223

800 V

SOT223

4. Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak off-state voltage

25 °C ≤ T_j≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN

Z0103/07/09NA; Z0103/07/09NN

repetitive peak reverse voltage

Z0103/07/09MA; Z0103/07/09MN

Z0103/07/09NA; Z0103/07/09NN

-

600

800

V

25 °C ≤ T_j≤ 125 °C

-

600

800

V

non-repetitive peak on-state current full sine wave; T_j= 25 °C prior to surge;

Figure 2 and Figure 3

t = 20 ms

-

8

A

t = 16.7 ms

8.5

I_T(RMS)

RMS on-state current

SOT223

all conduction angles; Figure 4

T_sp= 90 °C

-

1

A

SOT54B (TO-92)

I²t for fusing

T_lead= 50 °C

-

1

A

I²t

t = 10 ms

-

0.35

20

A²s

A/µs

A

dI_T/dt

I_GM

rate of rise of on-state current

peak gate current

peak gate power

I_TM= 1.0 A; I_G= 2 x I_GT; dI_G/dt = 100 mA/µs

t_p= 20 µs

-

1.0

2.0

0.1

+150

+125

P_GM

P_G(AV)

T_stg

-

W

average gate power

storage temperature

junction temperature

over any 20 ms period

-

W

−40

°C

T_j

9397 750 10102

Product data

Rev. 02 — 12 September 2002

2 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

003aaa199

003aaa200

10

TSM

(A)

1.6

I

P

α =

tot

(W)

α

180°

8

6

4

α

1.2

120°

90°

60°

0.8

30°

0.4

0

2

0

2

3

0

0.4

0.8

1.2

1

10

n

I

(A)

T(RMS)

α = conduction angle

n = number of cycles at f = 50 Hz

Fig 1. Maximum on-state power dissipation as a

function of RMS on-state current; typical

values.

Fig 2. Maximum permissible non-repetitive peak

on-state current as a function of number of

cycles for sinusoidal currents; typical values.

003aaa207

2

10

003aaa201

1.2

I

TSM

δI /δt limit

I

T

T(RMS)

(A)

10

1

0.8

SOT223

(T

SOT54B

(T

)

sp

lead

0.4

-1

10

0

-4

-3

-2

-5

0

100

T

50

10

150

, T (°C)

10

t

(s)

s

lead sp

Fig 3. Maximum permissible non-repetitive peak

on-state current as a function of surge duration

for sinusoidal currents; typical values.

Fig 4. Maximum permissible RMS on-state current as

a function of lead temperature and solder point

temperature; typical values.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

3 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

5. Thermal characteristics

Table 4:

Symbol

R_th(j-sp)

Thermal characteristics

Parameter

Conditions

Min Typ Max Unit

thermal resistance from junction to solder

point for SOT223

-

25

K/W

Figure 5

R_th(j-lead)

R_th(j-a)

thermal resistance from junction to lead for

SOT54B (TO-92)

-

60

K/W

Figure 5

thermal resistance from junction to ambient

SOT223

minimum footprint; mounted on a PCB

vertical in free air

-

60

-

K/W

SOT54B (TO-92)

150 -

5.1 Transient thermal impedance

003aaa206

10

a

1

SOT223

-1

10

SOT54B

-2

10

-3

-4

10

-5

-4

-3

-2

-1

2

3

10

1

10

t

(s)

p

Z_{th( j – lead)}

a =

for SOT54B (TO-92)

---------------------------

R_{th( j – lead)}

Z_{th( j – sp)}

a =

for SOT223

----------------------

R_{th( j – sp)}

Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse

duration.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

4 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

6. Characteristics

Table 5:

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

I_GT

gate trigger current

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

latching current

V_D= 12 V; R_L= 30 Ω; T2+ G+; T2+ G−; T2− G−;

Figure 9

-

3

mA

5

10

5

V_D= 12 V; R_L= 30 Ω; T2− G+; Figure 9

7

10

I_L

V_D= 12 V; R_L= 30 Ω; T2+ G+; T2− G−; T2− G+;

Figure 7

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

-

7

mA

10

15

20

25

Z0103MA/MN/NA/NN V_D= 12 V; R_L= 30 Ω; T2+ G−; Figure 7

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

I_H

holding current

I_T= 50 mA; Figure 8

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

on-state voltage

-

7

mA

V

-

10

1.6

1.3

-

V_T

Figure 6

-

1.3

V_GT

gate trigger voltage

V_D= 12 V; R_L= 30 Ω; T_j= 25 °C; Figure 11

V_D= V_DRM; R_L= 3.3 kΩ; T_j= 125 °C; Figure 11

-

V

0.2

-

V

I_D

off-state leakage current V_D= V_DRM(max); V_R= V_RRM(max);T_j= 125 °C

500

µA

Dynamic characteristics

dV_D/dt critical rate of rise of

V_D= 0.67 V_DRM(max); T_j= 110 °C; exponential

off-state voltage

waveform; gate open; Figure 10

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

10

20

50

-

V/µs

dV_com/dt critical rate of change of V_D= 400 V; I_T= 1 A; T_j= 110 °C;

commutating voltage

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

dI_com/dt = 0.44 A/ms; gate open

0.5

1

-

V/µs

2

9397 750 10102

Product data

Rev. 02 — 12 September 2002

5 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

003aaa202

003aaa203

8

3

2

I

T

a

(A)

6

125 °C

typ

4

125 °C

max

1

25 °C

max

2

0

1

2

3

-50

0

50

100

150

V

(V)

T (°C)

T

j

I_L

a =

------------------

I

°

L(25 C)

Fig 6. On-state current as a function of on-state

voltage; typical and maximum values.

Fig 7. Normalized latching current as a function of

junction temperature; typical values.

003aaa204

003aaa205

3

4

T2+ G+

T2+ G-

T2- G+

T2- G-

a

3

2

1

0

1

0

-50

0

50

100

150

-50

0

50

100

150

T (°C)

j

T (°C)

j

I_H

I_GT

a =

-------------------

----------------------

I

°

H(25 C)

GT (25 C)

Fig 8. Normalized holding current as a function of

junction temperature; typical values.

Fig 9. Normalized gate trigger current as a function of

junction temperature; typical values.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

6 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

003aaa208

003aaa209

1.6

1.2

1.6

a

1.2

0.8

0.4

0

0.4

0

100

150

50

-50

0

50

100

150

T (°C)

j

V_GT

dV_D⁄ dt

a =

------------------------

a =

----------------------------------

V

dV_D(25°C)⁄ dt

°

GT (25 C)

Fig 10. Normalized critical rate of rise of off-state

voltage as a function of junction temperature;

typical values.

Fig 11. Normalized gate trigger voltage as a function of

junction temperature; typical values.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

7 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

7. Package outline

Plastic single-ended leaded (through hole) package; 3 leads

SOT54B

c

E

d

A

L

b

1

e

1

2

e

D

3

b

1

L

1

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

b

1

max

(1)

UNIT

A

b

c

D

d

E

e

L

1

4.8

4.4

0.45

0.36

0.43

0.33

4.7

4.5

1.7

1.4

3.7

3.4

15.2

12.7

1.55

1.45

mm

2.54

1.27

0.48

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

02-01-29

SOT54B

TO-92

Fig 12. SOT54B (TO-92).

9397 750 10102

Product data

Rev. 02 — 12 September 2002

8 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

Plastic surface mounted package; collector pad for good heat transfer; 4 leads

SOT223

D

B

E

A

X

c

y

H

v

M

A

E

b

1

4

Q

A

1

L

1

2

3

p

e

b

p

w

M

B

detail X

1

e

0

2

4 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

b

c

D

E

e

H

L

p

Q

v

w

y

p

1

E

1.8

1.5

0.10 0.80

0.01 0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3

7.3

6.7

1.1

0.7

0.95

0.85

mm

4.6

2.3

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SC-73

97-02-28

99-09-13

SOT223

Fig 13. SOT223.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

9 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

8. Revision history

Table 6:

Revision history

CPCN

Rev Date

Description

02 20020912

Product data; supersedes data of 11 April 2002

Table 5 “Characteristics” Addition of dV_com/dt data. Correction to dV_D/dt data

01 20020411

-

Product data; initial version (9397 750 09419)

9397 750 10102

Product data

Rev. 02 — 12 September 2002

10 of 12

Z0103/07/09 series

Philips Semiconductors

Triacs

9. Data sheet status

Data sheet status^[1]

Product status^[2]

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors

reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

Production

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to

improve the design and supply the best possible product.

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure

SNW-SQ-650A.

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

10. Deﬁnitions

11. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes, without notice, in the products, including circuits, standard

cells, and/or software, described or contained herein in order to improve

design and/or performance. Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.

Fax: +31 40 27 24825

11 of 12

9397 750 10102

Product data

Rev. 02 — 12 September 2002

Z0103/07/09 series

Philips Semiconductors

Triacs

Contents

1

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Transient thermal impedance . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3

3.1

4

5

5.1

6

7

8

9

10

11

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 12 September 2002

Document order number: 9397 750 10102


型号：	Z0103MA
厂家：	NXP
描述：	Triacs 双向可控硅栅极触发装置可控硅三端双向交流开关
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