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元器件品牌
D1000K1K0E
[OHMITE]
Potentiometer, Wire Wound, 1000W, 1000ohm, 8900V, 10% +/-Tol, -260,260ppm/Cel, ROHS COMPLIANT;
元器件型号：
D1000K1K0E
生产厂家：
OHMITE MFG. CO.
描述和应用：
Potentiometer, Wire Wound, 1000W, 1000ohm, 8900V, 10% +/-Tol, -260,260ppm/Cel, ROHS COMPLIANT
电阻器
PDF文件：
总1页 (文件大小：108K)
下载文档：
下载PDF数据表文档文件
型号参数：D1000K1K0E参数
查看货源
D1000K500
Potentiometer, Wire Wound, 1000W, 500ohm, 8900V, 10% +/-Tol, -260,260ppm/Cel
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OHMITE
D1000K500E
Potentiometer, Wire Wound, 1000W, 500ohm, 8900V, 10% +/-Tol, -260,260ppm/Cel, ROHS COMPLIANT
Warning
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0
OHMITE
D1000K5R0
Potentiometer, Wire Wound, 1000W, 5ohm, 8900V, 10% +/-Tol, -260,260ppm/Cel
Warning
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156
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OHMITE
D1001UK
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
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131
SEME-LAB
D1002UK
METAL GATE RF SILICON FET
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on line
156
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217
SEME-LAB
D1003UK
METAL GATE RF SILICON FET
Warning
: Undefined variable $rtag in
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on line
156
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87
SEME-LAB
D100-3X
WILMAR™ Protective Relays-D100X Series, Close Differential
Warning
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on line
156
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17
MA-COM
D1004
METAL GATE RF SILICON FET
Warning
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on line
156
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58
SEME-LAB
D1004
METAL GATE RF SILICON FET
Warning
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156
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27
SEME-LAB
D10040-000
14mm Series Metal Oxide Varistors
Warning
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156
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13
MA-COM
D10040180GT
GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
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: Undefined variable $rtag in
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51
PDI
D10040180GTH
GaAs Power Doubler, 40 - 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC
Warning
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156
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44
PDI
D10040200GT
GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
Warning
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on line
156
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43
PDI
D10040200GTH
GaAs Power Doubler, 40 - 1000MHz, 20.0dB min. Gain @ 1GHz, High, 440mA max. @ 24VDC
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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42
PDI
D1004020A1028FMZ
RESISTOR, METAL GLAZE/THICK FILM, 0.063W, 1%, 200ppm, 1.02ohm, SURFACE MOUNT, 0402, CHIP
Warning
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0
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