QS821K [OHMITE]

General Purpose Inductor, 8.2uH, 10%, 1 Element, Iron-Core, AXIAL LEADED;
QS821K
元器件型号: QS821K
生产厂家: OHMITE MFG. CO.    OHMITE MFG. CO.
描述和应用:

General Purpose Inductor, 8.2uH, 10%, 1 Element, Iron-Core, AXIAL LEADED

PDF文件: 总1页 (文件大小:21K)
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型号参数:QS821K参数

QS822K

General Purpose Inductor, 82uH, 10%, 1 Element, Iron-Core, AXIAL LEADED

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0 OHMITE

QS823K

General Purpose Inductor, 820uH, 10%, 1 Element, Iron-Core, AXIAL LEADED

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0 OHMITE

QS824K

General Purpose Inductor, 8200uH, 10%, 1 Element, Iron-Core, AXIAL LEADED

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0 OHMITE

QS86446-15V

64KX4 CACHE SRAM, 15ns, PDSO28

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0 ROCHESTER

QS86446-20P

64KX4 CACHE TAG SRAM, 19ns, PDIP28

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0 ROCHESTER

QS8888A-15V

16KX4 CACHE SRAM, 15ns, PDSO24

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0 ROCHESTER

QS8F2

1.5V Drive Pch MOSFET + PNP TRANSISTOR

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46 ROHM

QS8F2TR

Power Field-Effect Transistor, 2.5A I(D), 12V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

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0 ROHM

QS8J1

1.5V Drive Pch+Pch MOSFET

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34 ROHM

QS8J11

1.5V Drive Pch Pch MOSFET

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12 ROHM

QS8J11TCR

Power Field-Effect Transistor, 3.5A I(D), 12V, 0.043ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

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0 ROHM

QS8J11TR

Small Signal Field-Effect Transistor, 3.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN

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0 ROHM

QS8J12

1.5V Drive Pch + Pch MOSFET

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21 ROHM

QS8J12TR

Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN

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0 ROHM

QS8J1TR

Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

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0 ROHM