MS81V26000 [OKI]

1,114,112-Word X 24-Bit Field Memory; 1,114,112字×24位字段存储
MS81V26000
元器件型号: MS81V26000
生产厂家: OKI ELECTRONIC COMPONETS    OKI ELECTRONIC COMPONETS
描述和应用:

1,114,112-Word X 24-Bit Field Memory
1,114,112字×24位字段存储

存储
PDF文件: 总20页 (文件大小:151K)
下载文档:  下载PDF数据表文档文件
型号参数:MS81V26000参数

MS81V26000-12TB

1,114,112-Word X 24-Bit Field Memory

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45 OKI

MS81V26000-12TB

1,114,112-Word X 24-Bit Field Memory

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15 OKI

MS81V32321-7TB

Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128

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0 OKI

MS81V32322-66TB

Memory Circuit, 1MX32, CMOS, PQFP128, 14 X 14 MM, 0.40 MM PITCH, PLASTIC, TQFP-128

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0 OKI

MS820

8 Amp Schottky Barrier Rectifier 20 to 100 Volts

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26 MCC

MS820

8Amp schottky barrier rectifier 20to100 volts

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5 CHENYI

MS82000RKXLI-10

SRAM Module, 2MX8, 100ns, CMOS

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7 MOSAIC

MS820-BP

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

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0 MCC

MS820-T

暂无描述

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0 MCC

MS820-TP

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

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0 MCC

MS820-TP

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

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0 MCC

MS8211

PEN-TYPE AUTORANGING

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0 ETC1

MS8211D

PEN-TYPE AUTORANGING

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0 ETC1

MS8250-48

SCHOTTKY DIODES TM Silicon Low Barrier

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9 MICROSEMI

MS8250-P2920

GaAs Schottky Diodes Flip Chip Anti Parallel Low RS

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21 MICROSEMI