MSC23B236A-60BS8 [OKI]
Fast Page DRAM Module, 2MX36, 60ns, CMOS, PSMA72,;
| 型号： | MSC23B236A-60BS8 |
| 厂家： | 
OKI ELECTRONIC COMPONETS |
| 描述： | Fast Page DRAM Module, 2MX36, 60ns, CMOS, PSMA72, 动态存储器 |
| 文件： | 总8页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
¡ Semiconductor
MSC23B236A-xxBS8/DS8
2,097,152-Word ¥ 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word ¥ 36-bit CMOS dynamic
random access memory composed of four 16-Mb (1M ¥ 16) DRAMs in SOJ and four 2-Mb (1M
¥2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72-
pin glass epoxy SIMM Package supports any application where high density and large capacity
of storage memory are required.
FEATURES
• 2,097,152-word ¥ 36-bit (Parity) organization
• 72-pin SIMM
MSC23B236A-xxBS8
MSC23B236A-xxDS8
: Gold tab
: Solder tab
• Single 5 V supply ±10% tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 1024 cycles/16 ms
• CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability
• Fast Page Mode capability
PRODUCT FAMILY
Access Time (Max.)
Power Dissipation
Cycle Time
(Min.)
Family
tRAC
60 ns
70 ns
tAA
tCAC
15 ns
20 ns
Operating (Max.) Standby (Max.)
MSC23B236A-60BS8/DS8
MSC23B236A-70BS8/DS8
30 ns
35 ns
110 ns
130 ns
3410 mW
44 mW
3080 mW
159
MSC23B236A-xxBS8/DS8
¡ Semiconductor
PIN CONFIGURATION
MSC23B236A-xxBS8/DS8
(Unit : mm)
9.3 Max.
* 1
107.95 0.2
3.38 0.13
101.19 Typ.
f3.18
25.4 0.13
10.16
0.13
72
6.35
0.13
5.7 Min.
1
2.03 0.13
R1.57
6.35
95.25
+0.1
–0.08
1.27 0.1
1.04 Typ.
1.27
6.35 Typ.
*1 The common size difference of the board width 12.5 mm of its height is
specified as 0.2. The ꢀaꢁle aboꢀe 12.5 mm is specified as 0.5.
Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name Pin No. Pin Name
1
2
VSS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
VCC
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A4
A5
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
A8
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
NC
61
62
63
64
65
66
67
68
69
70
71
72
DQ14
DQ33
DQ15
DQ34
DQ16
NC
A9
WE
3
A6
RAS3
RAS2
DQ26
DQ8
NC
4
NC
DQ9
5
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
VCC
6
7
DQ17
DQ35
VSS
PD1
PD2
PD3
PD4
NC
8
9
10
11
12
13
14
15
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
A0
VSS
A1
A2
NC
A3
VCC
DQ32
Presence Detect Pins
MSC23B236A
-60BS8/DS8
MSC23B236A
-70BS8/DS8
Pin No.
Pin Name
67
68
69
70
PD1
PD2
PD3
PD4
NC
NC
NC
NC
NC
NC
VSS
NC
160
¡ Semiconductor
MSC23B236A-xxBS8/DS8
BLOCK DIAGRAM
A0 - A9
CAS0
CAS1
WE
A0 - A9
A0 - A9
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
RAS
RAS
RAS0
RAS1
LCAS
UCAS
WE
LCAS
UCAS
WE
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ9
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
OE
OE
DQ16
VCC
DQ16
VSS
VCC
VSS
A0 - A9
RAS
CAS1
A0 - A9
RAS
CAS1
DQ1
DQ2
DQ8
DQ17
DQ1
DQ2
CAS2
WE
OE
CAS2
WE
OE
VSS
VSS
VCC
VCC
A0 - A9
A0 - A9
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
RAS
RAS
RAS2
RAS3
LCAS
UCAS
WE
LCAS
UCAS
WE
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
OE
OE
DQ16
VCC
DQ16
VSS
VSS
VCC
A0 - A9
RAS
CAS1
A0 - A9
RAS
CAS1
DQ1
DQ2
DQ26
DQ35
DQ1
DQ2
CAS2
WE
OE
CAS2
WE
OE
VSS
VSS
VCC
VCC
CAS2
CAS3
VCC
C1
C8
VSS
161
MSC23B236A-xxBS8/DS8
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Symbol
VIN, VOUT
VCC
Rating
–1.0 to 7.0
–1.0 to 7.0
50
Unit
V
Voꢁtage on Any Pin Reꢁatiꢀe to VSS
Voꢁtage VCC Slppꢁy Reꢁatiꢀe to VSS
Short Circlit Oltplt Clrrent
Power Dissipation
V
IOS
mA
W
PD
9.2
Operating Temperatlre
Topr
0 to 70
°C
°C
Storage Temperatlre
Tstg
–40 to 125
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Symbol
VCC
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
V
Power Slppꢁy Voꢁtage
VSS
Inplt High Voꢁtage
Inplt Low Voꢁtage
VIH
2.4
–1.0
—
6.5
0.8
VIL
—
Capacitance
(Ta = 25°C, f = 1 MHz)
Parameter
Symbol
CIN1
Typ.
Max.
53
Unit
pF
Inplt Capacitance (A0 - A9)
Inplt Capacitance (WE)
—
—
—
—
—
CIN2
65
pF
Inplt Capacitance (RAS0 - RAS3)
Inplt Capacitance (CAS0 - CAS3)
I/O Capacitance (DQ0 - DQ35)
CIN3
20
pF
CIN4
35
pF
CDQ
20
pF
Note : Capacitance measured with Boonton Meter.
162
¡ Semiconductor
MSC23B236A-xxBS8/DS8
DC Characteristics
(VCC = 5 V 10ꢂ, Ta = 0°C to 70°C)
MSC23B236A
-60BS8/DS8
MSC23B236A
-70BS8/DS8
Min. Max.
Parameter
Symbol
Condition
Unit Note
Min.
Max.
0 V £ VI £ 6.5 V;
ILI Aꢁꢁ other pins not
lnder test = 0 V
Inplt Leakage Clrrent
–80
80
–80
80
µA
µA
DOUT disabꢁe
Oltplt Leakage Clrrent ILO
–20
20
–20
20
0 V £ VO £ 5.5 V
Oltplt High Voꢁtage
Oltplt Low Voꢁtage
Aꢀerage Power
Slppꢁy Clrrent
(Operating)
VOH IOH = –5.0 mA
VOL IOL = 4.2 mA
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
RAS, CAS cycꢁing,
1, 2
ICC1
—
620
—
560
mA
tRC = Min.
RAS, CAS = VIH
ICC2 RAS, CAS
≥ VCC –0.2 V
—
—
16
8
—
—
16
8
mA
mA
1
1
Power Slppꢁy
Clrrent (Standby)
Aꢀerage Power
RAS cycꢁing,
Slppꢁy Clrrent
ICC3 CAS = VIH,
tRC = Min.
—
—
—
620
620
480
—
—
—
560
560
450
mA 1, 2
mA 1, 2
mA 1, 3
(RAS-onꢁy Refresh)
Aꢀerage Power
RAS cycꢁing,
Slppꢁy Clrrent
ICC6 CAS before RAS,
tRC = Min.
(CAS before RAS Refresh)
Aꢀerage Power
RAS = VIL,
Slppꢁy Clrrent
ICC7 CAS cycꢁing,
tPC = Min.
(Fast Page Mode)
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. Address can be changed once or less while RAS=V .
IL
3. Address can be changed once or less while CAS=V .
IH
163
MSC23B236A-xxBS8/DS8
AC Characteristics (1/2)
Parameter
¡ Semiconductor
(VCC = 5 V 10ꢂ, Ta = 0°C to 70°C) Note 1,2,3
MSC23B236A
-60BS8/DS8
Min.
Max.
110
MSC23B236A
-70BS8/DS8
Symbol
Unit Note
Min.
130
45
—
—
—
—
0
Max.
—
Random Read or Write Cycꢁe Time
Fast Page Mode Cycꢁe Time
Access Time from RAS
tRC
tPC
—
ns
ns
40
—
—
—
—
0
—
60
15
30
35
—
15
50
16
—
10k
100k
—
—
10k
—
—
—
45
30
—
—
—
—
—
—
—
tRAC
tCAC
tAA
70
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4, 5, 6
Access Time from CAS
20
4, 5
4, 6
4
Access Time from Coꢁlmn Address
Access Time from CAS Precharge
Oltplt Low Impedance Time from CAS
Oltplt Blffer Tlrn-off Deꢁay Time
Transition Time
35
tCPA
tCLZ
tOFF
tT
40
—
4
0
0
20
7
3
3
50
3
Refresh Period
tREF
tRP
—
40
60
60
15
10
15
60
5
—
50
70
70
20
10
20
70
5
16
RAS Precharge Time
—
RAS Plꢁse Width
tRAS
tRASP
tRSH
tCP
10k
100k
—
RAS Plꢁse Width (Fast Page Mode)
RAS Hoꢁd Time
CAS Precharge Time
—
CAS Plꢁse Width
tCAS
tCSH
tCRP
tRHCP
tRCD
tRAD
tASR
tRAH
tASC
tCAH
tAR
10k
—
CAS Hoꢁd Time
CAS to RAS Precharge Time
RAS Hoꢁd Time from CAS Precharge
RAS to CAS Deꢁay Time
—
35
20
15
0
40
20
15
0
—
50
5
6
RAS to Coꢁlmn Address Deꢁay Time
Row Address Set-lp Time
Row Address Hoꢁd Time
35
—
10
0
10
0
—
Coꢁlmn Address Set-lp Time
Coꢁlmn Address Hoꢁd Time
Coꢁlmn Address Hoꢁd Time from RAS
Coꢁlmn Address to RAS Lead Time
—
15
50
30
15
55
35
—
—
tRAL
—
164
¡ Semiconductor
AC Characteristics (2/2)
Parameter
MSC23B236A-xxBS8/DS8
(VCC = 5 V 10ꢂ, Ta = 0°C to 70°C) Note 1,2,3
MSC23B236A
-60BS8/DS8
Min.
Max.
MSC23B236A
-70BS8/DS8
Symbol
Unit Note
Min.
0
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Read Command Set-lp Time
Read Command Hoꢁd Time
tRCS
tRCH
0
—
ns
8
8
0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Command Hoꢁd Time referenced to RAS tRRH
0
0
Write Command Set-lp Time
Write Command Hoꢁd Time
Write Command Hoꢁd Time from RAS
Write Command Plꢁse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Set-lp Time
tWCS
tWCH
tWCR
tWP
0
0
10
45
10
15
15
0
15
55
15
20
20
0
tRWL
tCWL
tDS
Data-in Hoꢁd Time
tDH
15
50
5
15
55
5
Data-in Hoꢁd Time from RAS
tDHR
CAS Actiꢀe Deꢁay Time from RAS Precharge tRPC
RAS to CAS Set-lp Time (CAS before RAS) tCSR
5
5
RAS to CAS Hoꢁd Time (CAS before RAS)
tCHR
10
10
10
15
10
10
WE to RAS Precharge Time (CAS before RAS) tWRP
WE Hoꢁd Time from RAS (CAS before RAS) tWRH
165
MSC23B236A-xxBS8/DS8
¡ Semiconductor
Notes:
1. A start-up delay of 200 µs is required after power-up followed by a minimum of
eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before
proper device operation is achieved.
When using the internal refresh counter, a minimum of eight CAS before RAS
initialization cycles is required.
2. AC mesurement assume t = 5 ns.
T
3. V (Min.) and V (Max.) are reference levels for measuring input timing signals.
IH
IL
Transition times are measured between V and V .
IH
IL
4. Measured with a load circuit equivalent to 2 TTL loads and 100 pF.
5. Operation within the t (Max.) limit ensures that t (Max.) can be met. t
RCD
RAC
RCD
RCD
(Max.)isspecifiedasareferencepointonly. Ift
isgreaterthanthespecifiedt
RCD
(Max.) limit, access time is controlled by t
.
CAC
6. Operation within the t
(Max.) limit ensures that t
(Max.) can be met. t
RAD
RAC
RAD
RAD
(Max.)isspecifiedasareferencepointonly. Ift
isgreaterthanthespecifiedt
RAD
(Max.) limit, access time is controlled by t
.
AA
7. t
(Max.) defines the time at which the output achieves an open circuit condition
OFF
and is not referenced to output voltage levels.
8. t or t must be satisfied for a read cycle.
RCH
RRH
See ADDENDUM B for AC Timing Waveforms
166
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