MSC23CV43257D-XXBS8 [OKI]
4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO; 4,194,304字×32位动态RAM模块：与EDO快页模式类型
| 型号： | MSC23CV43257D-XXBS8 |
| 厂家： | 
OKI ELECTRONIC COMPONETS |
| 描述： | 4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO |
| 文件： | 总9页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This version: Mar. 1999
Semiconductor
MSC23CV43257D-xxBS8
4,194,304-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23CV43257D-xxBS8 is a fully decoded, 4,194,304-word x 32-bit CMOS dynamic random access memory
module composed of eight 16Mb DRAMs (4Mx4) in TSOP packages mounted with eight decoupling capacitors on a
72-pin glass epoxy small outline package. This module supports any application where high density and large
capacity of storage memory are required.
FEATURES
· 4,194,304-word x 32-bit organization
· 72-pin Small Outline Dual In-line Memory module
MSC23CV43257D-xxBS8 : Gold tab
· Single +3.3V supply ± 0.3V tolerance
· Input
: LVTTL compatible
· Output
: LVTTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO capability
· Multi-bit test mode capability
· 11/11 Addressing (Row/Column)
PRODUCT FAMILY
Cycle
Time
Access Time (Max.)
Power Dissipation
Family
tRAC
60ns
70ns
tAA
tCAC
15ns
20ns
Operating (Max.)
Standby (Max.)
(Min.)
MSC23CV43257D-60BS8
MSC23CV43257D-70BS8
30ns
35ns
104ns
124ns
2592mW
2304mW
14.4mW
Semiconductor
MSC23CV43257D
MODULE OUTLINE
MSC23CV43257D-xxBS8
(Unit : mm)
3.80Max.
25.4±0.13
3.18±0.13
2.0±0.13
5.5Min.
71
1
2.62Typ.
1.00±0.1
44.45±0.1
*1 59.69±0.2
*1 The common size difference of the board width 19.78mm of its height is specified as ±0.2.
The value above 19.78mm is specified as ±0.5.
R2.0
1.0±0.1
17.78±0.13
0.25 Max.
1.8±0.1
2- 1.8
72
2
0.23 Min.
1.27±0.1
3.25Typ.
φ
R2.0
44.45±0.1
51.66±0.1
3.03
5.00
Semiconductor
MSC23CV43257D
PIN CONFIGURATION
Front Side
Pin Name Pin No.
Back Side
Pin No.
1
Pin Name
DQ16
VSS
Pin No.
2
Pin Name
Pin No.
38
Pin Name
VSS
DQ1
DQ3
DQ5
DQ7
PD1
A1
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
DQ0
DQ2
DQ4
DQ6
VCC
DQ17
/CAS0
/CAS3
/RAS0
NC
3
4
40
5
/CAS2
/CAS1
NC
6
42
7
8
44
9
10
12
14
16
18
20
22
24
26
28
30
32
34
36
46
11
13
15
17
19
21
23
25
27
29
31
33
35
/WE
A0
48
NC
DQ18
DQ20
DQ22
NC
A2
50
DQ19
DQ21
DQ23
DQ24
DQ26
DQ28
DQ29
DQ31
PD2
A3
A4
52
A5
A6
54
A10
DQ8
DQ10
DQ12
DQ14
NC
NC
56
DQ25
DQ27
VCC
DQ9
DQ11
DQ13
A7
58
60
62
DQ30
NC
64
VCC
66
A8
PD3
A9
68
PD4
NC
PD5
/RAS2
NC
70
PD6
DQ15
PD7
72
VSS
Presence Detect Pins
Pin No.
11
Pin Name
-60
NC
NC
VSS
NC
NC
NC
NC
-70
NC
NC
VSS
NC
VSS
NC
NC
PD1
PD2
PD3
PD4
PD5
PD6
PD7
66
67
68
69
70
71
Semiconductor
MSC23CV43257D
BLOCK DIAGRAM
A0-A10
/RAS0
/CAS0
/WE
/RAS2
/CAS2
A0-A10 DQ
DQ0
DQ1
DQ2
DQ3
A0-A10 DQ
DQ16
DQ17
DQ18
DQ19
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
V
CC
V
SS
V
CC
V
SS
A0-A10 DQ
DQ4
DQ5
DQ6
DQ7
A0-A10 DQ
DQ20
DQ21
DQ22
DQ23
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
V
CC
V
SS
V
CC
V
SS
A0-A10 DQ
DQ8
DQ9
DQ10
DQ11
A0-A10 DQ
DQ24
DQ25
DQ26
DQ27
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
V
CC
V
SS
V
CC
V
SS
A0-A10 DQ
DQ12
DQ13
DQ14
DQ15
A0-A10 DQ
DQ28
DQ29
DQ30
DQ31
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
/RAS
/CAS
/WE
DQ
DQ
DQ
/OE
V
CC
V
SS
V
CC
V
SS
/CAS1
/CAS3
V
CC
C1-C8
V
SS
Semiconductor
MSC23CV43257D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
VIN, VOUT
VCC
Rating
-0.5 to +4.6
-0.5 to +4.6
50
Unit
V
V
IOS
mA
W
PD *
8
Operating Temperature
TOPR
0 to +70
-40 to +125
°C
°C
Storage Temperature
TSTG
* Ta = 25°C
Recommended Operating Conditions
( Ta = 0°C to +70°C )
Parameter
Symbol
Min.
3.0
0
Typ.
Max.
Unit
V
VCC
VSS
VIH
VIL
3.3
3.6
0
Power Supply Voltage
0
-
V
Input High Voltage
Input Low Voltage
2.0
-0.3
VCC+0.3
0.8
V
-
V
Capacitance
( VCC = 3.3V ± 0.3V, Ta = 25°C, f = 1 MHz )
Parameter
Symbol
CIN1
Typ.
Max.
57
Unit
pF
Input Capacitance (A0 - A10)
Input Capacitance (/WE)
-
-
-
-
-
CIN2
65
pF
Input Capacitance (/RAS0, /RAS2)
Input Capacitance (/CAS0- /CAS3)
I/O Capacitance (DQ0 - DQ31)
CIN3
35
pF
CIN4
20
pF
CDQ
16
pF
Semiconductor
MSC23CV43257D
DC Characteristics
(VCC = 3.3V ± 0.3V, Ta = 0°C to +70°C )
-60
-70
Parameter
Symbol
Condition
Unit
Note
Min.
Max.
Min.
Max.
0V ≤ VIN ≤ VCC+0.3V;
All other pins not
under test = 0V
Input Leakage Current
Output Leakage Current
ILI
-80
80
-80
80
µA
µA
DQ disable
0V ≤ VOUT ≤ VCC
ILO
-10
10
-10
10
Output High Voltage
Output Low Voltage
VOH
VOL
IOH = -2.0mA
IOL = 2.0mA
2.4
0
VCC
0.4
2.4
0
VCC
0.4
V
V
Average Power
Supply Current
(Operating)
/RAS, /CAS cycling,
tRC = Min.
ICC1
-
720
-
640
mA
1, 2
/RAS, /CAS = VIH
-
-
16
4
-
-
16
4
mA
mA
1
1
Power supply current
(Standby)
ICC2
/RAS, /CAS
≥ VCC -0.2V
Average Power
Supply Current
(/RAS only refresh)
/RAS cycling,
/CAS = VIH,
tRC = Min.
ICC3
ICC6
ICC7
-
-
-
720
720
720
-
-
-
640
640
640
mA
mA
mA
1, 2
1, 2
1, 3
Average Power
Supply Current
(/CAS before /RAS refresh)
/RAS cycling,
/CAS before /RAS
Average Power
Supply Current
(Fast Page Mode)
/RAS = VIL,
/CAS cycling,
tHPC = Min.
Notes: 1. ICC Max. is specified as ICC for output open condition.
2. The address can be changed once or less while /RAS = VIL.
3. The address can be changed once or less while /CAS = VIH.
Semiconductor
MSC23CV43257D
AC Characteristics (1/2)
(VCC = 3.3V ± 0.3V, Ta = 0°C to +70°C ) Note: 1, 2, 3, 10, 11
-60
-70
Parameter
Symbol
Unit
Note
Min.
104
25
-
Max.
Min.
124
30
-
Max.
Random Read or Write Cycle Time
Fast Page Mode Cycle Time
Access Time from /RAS
tRC
tHPC
tRAC
tCAC
tAA
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
60
70
4, 5, 6
4, 5
4, 6
4
Access Time from /CAS
-
15
-
20
Access Time from Column Address
Access Time from /CAS Precharge
Output Low Impedance Time from /CAS
Data Output Hold After /CAS Low
/CAS to Data Output Buffer Turn-off Delay Time
/RAS to Data Output Buffer Turn-off Delay Time
/WE to Data Output Buffer Turn-off Delay Time
Transition Time
-
30
-
35
tCPA
tCLZ
tDOH
tCEZ
tREZ
-
35
-
40
0
-
0
-
4
5
-
5
-
0
15
0
20
7,8
7,8
7
0
15
0
20
WEZ
t
0
15
0
20
tT
1
50
1
50
3
Refresh Period
tREF
tRP
-
32
-
32
/RAS Precharge Time
40
60
60
10
10
10
40
5
-
50
70
70
13
10
13
45
5
-
/RAS Pulse Width
tRAS
tRASP
tRSH
tCP
10K
10K
/RAS Pulse Width (Fast Page Mode with EDO)
/RAS Hold Time
100K
100K
-
-
/CAS Precharge Time (Fast Page Mode with EDO)
/CAS Pulse Width
-
-
tCAS
tCSH
tCRP
tRHCP
tRCD
tRAD
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
10K
10K
/CAS Hold Time
-
-
-
-
/CAS to /RAS Precharge Time
/RAS Hold Time from /CAS Precharge
/RAS to /CAS Delay Time
35
14
12
0
-
40
14
12
0
-
45
30
-
50
35
-
5
6
/RAS to Column Address Delay Time
Row Address Set-up Time
Row Address Hold Time
10
0
-
10
0
-
Column Address Set-up Time
Column Address Hold Time
-
-
10
30
0
-
13
35
0
-
Column Address to /RAS Lead Time
Read Command Set-up Time
Read Command Hold Time
-
-
-
-
0
-
0
-
9
9
Read Command Hold Time referenced to /RAS
0
-
0
-
Semiconductor
MSC23CV43257D
AC Characteristics (2/2)
(VCC = 3.3V ± 0.3V, Ta = 0°C to +70°C ) Note: 1, 2, 3, 10, 11
-60
-70
Parameter
Symbol
Unit
Note
Min.
0
Max.
Min.
0
Max.
Write Command Set-up Time
Write Command Hold Time
tWCS
tWCH
tWP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
10
10
10
10
0
13
10
10
13
13
0
Write Command Pulse Width
/WE Pulse Width (DQ Disable)
Write Command to /RAS Lead Time
Write Command to /CAS Lead Time
Data-in Set-up Time
WPE
t
tRWL
tCWL
tDS
Data-in Hold Time
tDH
10
5
13
5
/CAS Active Delay Time from /RAS Precharge
tRPC
/RAS to /CAS Set-up Time
(/CAS before /RAS)
tCSR
tCHR
tWRP
tWRH
tWTS
tWTH
5
-
-
-
-
-
-
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
/RAS to /CAS Hold Time
(/CAS before /RAS)
10
10
10
10
10
10
10
10
10
10
/WE to /RAS Precharge Time
(/CAS before /RAS)
/WE Hold Time from /RAS
(/CAS before /RAS)
/RAS to /WE Set-up Time
(Test Mode)
/RAS to /WE Hold Time
(Test Mode)
Semiconductor
MSC23CV43257D
Notes: 1. A start-up delay of 200µs is required after power-up, followed by a minimum of eight initialization cycles
(/RAS only refresh or /CAS before /RAS refresh) before proper device operation is achieved.
2. The AC characteristics assumes tT = 2ns.
3. VIH(Min.) and VIL(Max.) are reference levels for measuring input timing signals. Transition time (tT) are
measured between VIH and VIL.
4. This parameter is measured with a load circuit equivalent to 1TTL loads and 100pF.
The output timing reference levels are VOH = 2.0V and VOL = 0.8V.
5. Operation within the tRCD(Max.) limit ensures that tRAC(Max.) can be met.
tRCD(Max.) is specified as a reference point only. If tRCD is greater than the specified tRCD(Max.) limit, then
the access time is controlled by tCAC
.
6. Operation within the tRAD(Max.) limit ensures that tRAC(Max.) can be met.
tRAD(Max.) is specified as a reference point only. If tRAD is greater than the specified tRAD(Max.) limit, then
the access time is controlled by tAA.
7. tCEZ(Max.), tREZ(Max.) and tWEZ(Max.) define the time at which the output achieves the open circuit
condition and are not referenced to output voltage levels.
8. tCEZ or tREZ must be satisfied for open circuit condition.
9. tRCH or tRRH must be satisfied for a read cycle.
10. The test mode is initiated by performing a /WE and /CAS before /RAS refresh cycle. This mode is
latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet
is an 8-bit parallel test function. In a test mode CA0, CA1 and CA10 are not used. In a read cycle, if 8
data bits are equal, the DQ pin will indicate a high level. If the 8 data bits are not equal, the DQ pin will
indicate a low level. The test mode is cleared and the memory device returned to its normal operating
state by performing a /RAS only refresh cycle or a /CAS before /RAS refresh cycle.
11. In a test mode read cycle, the value of access time parameters is delayed for 5ns for the specified value.
These parameters should be specified in test mode cycle by adding the above value to the specified
value in this data sheet.
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